JPH0529140U - Substrate device - Google Patents

Abstract

(57) [Summary] [Object] To provide a substrate device capable of efficiently heating only a substrate or only a necessary portion of the substrate with radiant heat. [Structure] A semiconductor or insulator substrate that is heated by radiant heat in a vacuum is coated with a multilayer film mainly composed of a radiant heat absorber thin film layer on the back surface of that portion of the surface to be heated.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention is, for example, a technique required for molecular beam epitaxy treatment, and is a substrate device that is effective when a part or the whole surface of a substrate of a semiconductor or an insulator is heated in a vacuum. Regarding

In a semiconductor substrate after ion implantation, a substrate heating method called flash annealing is used in order to electrically activate the implanted impurities. However, even when the substrate is uniformly heated in-plane. The substrate device of the present invention is extremely effective.

[0003]

[Prior Art]

 Conventionally, in a process such as molecular beam epitaxy growth treatment, when a semiconductor or insulating substrate is heated to 300 ° C to 1200 ° C by radiant heat, the semiconductor or insulating substrate is placed on a member having good thermal conductivity. This member was heated by radiant heat and the substrate was indirectly heated by heat conduction from this member. The reason for indirectly heating is that a semiconductor such as Si or GaAs or a transparent insulator has a high transmittance in the infrared wavelength region and almost transmits radiant heat, which raises the temperature of the substrate. This is because there are difficulties. When the substrate is heated by this indirect method, the member installed on the back surface is also heated, and the heat capacity becomes larger than that in the case of the substrate alone, so the heating power increases. At the same time, the peripheral portion of the member is also heated, which causes the release of gas into the vacuum, and there is a drawback that the substrate surface is contaminated. There was also a phenomenon in which dust was released from the heating member and adhered to the substrate surface, which was a major problem in the device manufacturing process.

An object of the present invention is to solve the above problems and to provide a substrate device capable of efficiently heating only the substrate or only a necessary portion of the substrate with radiant heat.

[0005]

Means for Solving the Problems The present invention is to provide a radiant heat absorber by vapor deposition or discharge reaction treatment on a back surface of a portion of a surface of a semiconductor or an insulator which is heated by using radiant heat in a vacuum, just on the surface to be heated. It is a multi-layer film mainly composed of thin film layers.

[0006]

【Example】

 An embodiment of the present invention will be described below with reference to the drawings.

In the embodiment of FIG. 1, 1 is a substrate to be heated, 2 is a multilayer film including a radiant heat absorber thin film layer, and 3 is a heating element. As the radiant heat absorber thin film, a refractory metal such as molybdenum or tungsten, or carbon is used.

In FIG. 2, reference numeral 4 is a multi-layer film forming chamber including a radiant heat absorber thin film layer, and 5 is a substrate heating chamber. Inside the generation chamber 4, the back surface of the substrate is coated with a radiant heat absorber thin film layer or the like using a film forming technique such as vacuum deposition or discharge reaction treatment. When the substrate is thin enough, the coating is applied just to the backside of the surface to be heated. Next, the gate 7 is opened and the coated substrate is sent out to the substrate heating chamber 5, where predetermined surface processing is performed.

FIG. 3 shows an embodiment of the present invention in which a radiant heat absorber thin film is coated in multiple layers. The multilayer film has the effect of complementing each other when the composition thin film layers have mutually different absorption / reflection selectivity with respect to the wavelength of heat rays, but especially when the substrate and the radiant heat absorber thin film are used. When it reacts, it is effective as a measure for preventing the reaction. At this time, a thin film that does not react with the substrate is inserted between the substrate and the radiant heat absorber thin film. For example, when the substrate is Si, a SiO ₂ thin film is first coated and then a molybdenum thin film is formed thereon. Or when the substrate is GaAs, a Si ₃ N ₄ thin film is first placed and then a molybdenum thin film is coated thereon.

In practice, the multi-layered thin film including the radiant heat absorber of the present invention or a thin film layer of a part thereof can be formed by a completely different process in a batch process. Further, when the portion to be heated is localized on the surface of the substrate, a mask can be used when forming the radiant heat absorber thin film.

The coefficient of thermal expansion of the film covering the back surface is preferably close to that of the substrate.

Next, if it is desired to provide an electrode on the back surface after the surface treatment and thus to remove the thin film on the back surface, an organic resist is applied to the surface and the thin film on the back surface is removed with an acid. A method of mechanically removing the thin film is adopted.

[0013]

[Effect of the device]

 According to the device of the present invention, there is provided a substrate capable of heating only the surface of the substrate or a portion to be heated thereof with radiant heat efficiently, quickly, accurately and with excellent responsiveness.

In addition, there are the following secondary effects of the present invention. That is, when ion implantation is performed on an insulator or a semi-insulating semiconductor substrate, a large amount of secondary electrons are emitted due to ion collision, and the entire substrate is charged up by the secondary electrons, and the ions are implanted at a predetermined location. Although there is a phenomenon that it becomes impossible to do so, the substrate of the present invention whose back surface is coated with a refractory metal is very effective in preventing this charge-up.

[Brief description of drawings]

FIG. 1 is a diagram showing a heating state of a substrate device according to an embodiment of the present invention.

FIG. 2 is a schematic view of a thin film forming and heat treatment apparatus of a substrate device according to an embodiment of the present invention.

FIG. 3 is a diagram of an embodiment of a substrate device coated with a multilayer film of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Multilayer film including radiant heat absorber thin film layer 3 Heating element 4 Multilayer film generation chamber including radiant heat absorber thin film layer 5 Substrate heating chamber 6 Radiant heat absorber thin film

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Creator Hideo Minohe 5-8-1, Yotsuya, Fuchu-shi, Tokyo Nichiden Anelva Co., Ltd.

Claims (3)

[Scope of utility model registration request] 1. A substrate of a semiconductor or an insulator in which a part or the whole of the surface is heated by using radiant heat in a vacuum, and a back surface of the surface to be heated is coated with a multilayer film including a radiant heat absorber thin film layer. A substrate device characterized by the above. 2. The substrate device according to claim 1, wherein the radiant heat absorber thin film is a refractory metal or carbon. 3. A film of the multilayer film, which is in contact with the substrate,
The substrate device according to claim 1 or 2, wherein the substrate device is made of a substance that does not chemically react with the substrate.