JPH0528713Y2 - - Google Patents
Info
- Publication number
- JPH0528713Y2 JPH0528713Y2 JP1988132304U JP13230488U JPH0528713Y2 JP H0528713 Y2 JPH0528713 Y2 JP H0528713Y2 JP 1988132304 U JP1988132304 U JP 1988132304U JP 13230488 U JP13230488 U JP 13230488U JP H0528713 Y2 JPH0528713 Y2 JP H0528713Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- glass tube
- heater
- alloy wire
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 81
- 239000000843 powder Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 22
- 238000004140 cleaning Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910002026 crystalline silica Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000945 filler Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910019589 Cr—Fe Inorganic materials 0.000 description 1
- 229910002060 Fe-Cr-Al alloy Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Description
【考案の詳細な説明】
「産業上の利用分野」
本考案は、石英ガラス管内に電熱線を収容して
形成される石英ガラス管ヒータに係り、特に半導
体製造工程に使用される各種液を昇温させる為に
使用される石英ガラス管ヒータの改良に関する。[Detailed description of the invention] "Industrial application field" The present invention relates to a quartz glass tube heater formed by housing a heating wire in a quartz glass tube, and in particular, the invention relates to a quartz glass tube heater that is formed by housing a heating wire in a quartz glass tube. This article relates to improvements in quartz glass tube heaters used for heating purposes.
「従来の技術」
従来より半導体ウエハの洗浄やウエツトエツチ
ング処理を行う各種半導体製造工程においては、
前記洗浄液又はエツチング用の薬液を溜める処理
槽内に、温度調節用のヒータを配置し該ヒータに
より前記洗浄液等を適宜温度に昇温制御しながら
効率的な洗浄又は薬液処理を行うよう構成されて
いる。"Conventional technology" In various semiconductor manufacturing processes that traditionally involve cleaning and wet etching of semiconductor wafers,
A heater for temperature adjustment is disposed in a processing tank in which the cleaning liquid or etching chemical solution is stored, and the heater is configured to perform efficient cleaning or chemical treatment while controlling the temperature of the cleaning liquid or the like to an appropriate temperature. There is.
そしてかかる製造工程に使用されるヒータは洗
浄液又は薬液中に直接浸漬される為に、化学的安
定性と薬液中内への不純物の溶出を避ける構成を
取る必要があり、この為従来より、電熱線で形成
されるヒータ本体を石英ガラス管内に収容させて
形成される石英ガラス管ヒータを用いている。 Since the heaters used in such manufacturing processes are directly immersed in the cleaning liquid or chemical solution, they must be constructed to maintain chemical stability and prevent impurities from leaching into the chemical solution. A quartz glass tube heater is used in which a heater body made of a hot wire is housed in a quartz glass tube.
「考案が解決しようとする課題」
そしてかかるヒータに用いる電熱線は、一般に
Ni−Cr−Fe線やFe−Cr−Al線（以下これらを総
称して抵抗合金線という）をコイル状に巻回され
たものを用いているが、これらの合金線をいずれ
も石英ガラス管内に中空保持される構成を取る為
に、該ヒータの揺動又はヒータ製造時の石英ガラ
ス管の折曲により抵抗合金線が石英ガラス管内周
面に接触するか又は極めて近接してしまう場合が
多々ある。``The problem that the invention attempts to solve'' and the heating wires used in such heaters are generally
Ni-Cr-Fe wire or Fe-Cr-Al wire (hereinafter collectively referred to as resistance alloy wire) is used, which is wound into a coil shape. Because the heater is held hollow, the resistance alloy wire often comes into contact with or comes very close to the inner peripheral surface of the quartz glass tube due to swinging of the heater or bending of the quartz glass tube during heater manufacturing. be.
一方前記抵抗合金線の使用温度は1000〜1200℃
に達する為に、前記接触により局部的に加熱され
るとその接触した部分に歪が入り、この結果外周
囲側との温度差等に起因して石英ガラス管に割れ
やクラツクが入つたり、又抵抗合金線自体が破損
してしまう場合があつた。 On the other hand, the operating temperature of the resistance alloy wire is 1000~1200℃
In order to reach this temperature, when the contact area is locally heated, distortion occurs in the contact area, and as a result, the quartz glass tube may crack or crack due to the temperature difference with the outer surrounding side. In addition, there were cases where the resistance alloy wire itself was damaged.
そしてこのように石英ガラス管に割れやクラツ
クが入ると、該割れ目等からガラス管内に侵入し
た洗浄液や薬液が抵抗合金線と接触して、該接触
により発生した不純物等が処理槽内に溶出拡散し
てこれらがウエハ表面に付着して製品欠陥の大き
な原因になるのみならず、前記洗浄液や薬液に引
火性液を使用している場合には爆発が生じる場合
があり、大事故につながる恐れさえある。 When a quartz glass tube breaks or cracks in this way, the cleaning liquid or chemical solution that has entered the glass tube through the cracks comes into contact with the resistance alloy wire, and impurities generated by this contact are eluted and diffused into the processing tank. Not only do these adhere to the wafer surface and cause product defects, but if flammable liquids are used in the cleaning liquid or chemicals, an explosion may occur, which may even lead to a major accident. be.
かかる欠点を解消する為に、実開昭63−54294
号において、前記石英ガラス管内に不活性ガスを
供給し且つ不活性ガスを所定の正圧に保持した事
を特徴とする温度調節用ヒータを提案している。 In order to eliminate this drawback, Utility Model Application No. 63-54294
No. 2, proposes a temperature regulating heater characterized by supplying an inert gas into the quartz glass tube and maintaining the inert gas at a predetermined positive pressure.
しかしながらかかる従来技術は、単に該合金線
がガラス管内周面に接触して割れ目が入つた場合
に、ガラス管内に正圧の不活性ガスが保持されて
いる為に該ガラス管内に洗浄液等が侵入する事を
防止せんとしたものであり、従つて抵抗合金線が
石英ガラス管に対して中空保持されているという
構成においては従来と全く変わりがなく、基本的
に石英ガラス管の割れやクラツクを防止し得な
い。 However, in this conventional technology, if the alloy wire simply comes into contact with the inner circumferential surface of the glass tube and a crack occurs, cleaning liquid or the like will enter the glass tube because a positive pressure inert gas is maintained inside the glass tube. Therefore, the structure in which the resistance alloy wire is held hollow against the quartz glass tube is completely unchanged from the conventional one, and it basically prevents cracks and cracks in the quartz glass tube. It cannot be prevented.
この為前記欠点を解消する為に前記合金線を中
空保持する事なく、中実状に形成した石英ガラス
管内に直接鋳込み、両者を一体的に形成する方法
や、又前記合金線周囲に耐熱セラミツク材を被覆
する技術が検討又は開示されているが、いずれも
石英ガラス又は耐熱セラミツク材と合金線との熱
膨張率に違いにより、加熱又は冷却時に石英ガラ
ス又はセラミツク材にやはり割れやクラツクが入
り易く尚前記欠点を解消出来ず実用的でない。 Therefore, in order to eliminate the above-mentioned drawbacks, there is a method in which the alloy wire is directly cast into a solid quartz glass tube without being held hollow, and the two are integrally formed, and a heat-resistant ceramic material is used around the alloy wire. However, due to the difference in coefficient of thermal expansion between the quartz glass or heat-resistant ceramic material and the alloy wire, the quartz glass or ceramic material tends to crack or crack during heating or cooling. Incidentally, the above-mentioned drawbacks cannot be solved and it is not practical.
本考案はかかる従来技術の欠点に鑑み、石英ガ
ラス管が割れた場合の液の侵入を防止しようとす
る対処療法ではなく、基本的に石英ガラス管の割
れやクラツクを大幅に低減し得る石英ガラス管ヒ
ータを提供する事を目的とする。 In view of the shortcomings of the prior art, the present invention is not a countermeasure for preventing liquid from entering when a quartz glass tube breaks, but a quartz glass that basically can significantly reduce cracks and cracks in the quartz glass tube. The purpose is to provide tube heaters.
本考案の他の目的は前記合金線を中空保持する
事なく所定部材を用いて一体的に支持するととも
に該支持材が合金線との熱膨張率の差に起因して
破損やクラツク等が生じる事のない石英ガラス管
ヒータを提供する事を目的とする。 Another object of the present invention is to integrally support the alloy wire using a predetermined member without holding the alloy wire hollow, and the support material may be damaged or cracked due to the difference in coefficient of thermal expansion with the alloy wire. The purpose is to provide a quartz glass tube heater that does not cause any problems.
「課題を解決しようとする手段」
本発明はかかる技術的課題を達成する為に、
半導体製造工程に使用される各種液を昇温させ
る為に使用される石英ガラス管ヒータにおいて、
電熱線を収容した石英ガラス管内に、フイラー
状石英ガラス粉を充填し、該石英ガラス粉により
前記電熱線を石英ガラス管内周面間に対し非接触
の状態を維持して支持させた事を特徴とする石英
ガラス管ヒータを提案する。"Means for Solving the Problem" In order to achieve the technical problem, the present invention provides a quartz glass tube heater that accommodates heating wires and is used to raise the temperature of various liquids used in semiconductor manufacturing processes. The quartz glass tube is filled with filler-like quartz glass powder, and the heating wire is supported by the quartz glass powder while maintaining a non-contact state between the inner peripheral surfaces of the quartz glass tube. We suggest a tube heater.
「作用」
かかる技術手段によれば、前記抵抗合金線はシ
リカ体に、石英ガラス管内周面間に対し非接触の
状態を維持しながら支持されるも、該石英ガラス
粉の充填物はは剛体ではなく、微細的に多数の空
気層が介在している緩衝体として機能するもので
ある為に、前記合金線が熱により膨張収縮しても
より効果的にこれを吸収支持する事が出来、該熱
膨張から起因する石英ガラス管の破損を完全に防
止出来る。"Function" According to this technical means, the resistance alloy wire is supported by the silica body while maintaining a non-contact state between the inner peripheral surfaces of the quartz glass tube, but the filling of the quartz glass powder is not a rigid body. Rather, it functions as a buffer with a large number of finely interposed air layers, so even if the alloy wire expands and contracts due to heat, it can more effectively absorb and support it. Breakage of the quartz glass tube caused by the thermal expansion can be completely prevented.
又抵抗合金線は中空支持ではなく石英ガラス粉
を介して石英ガラス管と非接触の状態で対峙する
事になる為に、該抵抗合金線の局部加熱に起因す
る石英ガラス管の割れやクラツクも完全に防止出
来る。 In addition, since the resistance alloy wire faces the quartz glass tube in a non-contact state through the quartz glass powder instead of a hollow support, the quartz glass tube may break or crack due to local heating of the resistance alloy wire. Completely preventable.
更に石英ガラス粉は石英ガラス管への充填が容
易であり、又該石英ガラス粉が充填した状態で石
英ガラス管を任意に折曲させる事も可能であり、
又、粉粒状石英ガラス粉は繊維状のものに比較し
て電着線に融着する率が少なく、又例え一部が融
着しても熱効率や操作性の面で悪影響を及ぼす事
がなく、好ましい。 Furthermore, quartz glass powder can be easily filled into a quartz glass tube, and the quartz glass tube can be arbitrarily bent while filled with the quartz glass powder.
In addition, granular quartz glass powder has a lower rate of adhesion to electrodeposited wires than fibrous ones, and even if some of it does, it will not have a negative effect on thermal efficiency or operability. ,preferable.
又結晶シリカでなくガラス質の石英ガラス粉を
用いる事は次の様な利点がある。 Furthermore, using vitreous quartz glass powder instead of crystalline silica has the following advantages.
即ち、石英ガラス粉は、結晶質シリカに比較し
て赤外線の透過がよく、充填物自体が熱を吸収す
る事なく石英ガラス管の外の被加熱物を効率よく
加熱できる。 That is, quartz glass powder transmits infrared rays better than crystalline silica, and can efficiently heat the object outside the quartz glass tube without the filling itself absorbing heat.
特に結晶シリカ粉を用いてその充填物が加熱さ
れる事はその外周側に位置する石英ガラス管にも
熱が伝達して該ガラス管の破損の要因にもなる。 In particular, when the filling is heated using crystalline silica powder, heat is transferred to the quartz glass tube located on the outer peripheral side, which may cause breakage of the glass tube.
又、石英ガラス管を屈曲させた場合においても
電熱線との接触を避ける充填密度を上げた場合に
結晶質シリカ粉を用いた場合には結晶質シリカと
石英ガラスは熱膨張率が異なるために、言い換え
れば結晶質シリカの方が熱膨張率が大きいために
やはり石英ガラス管が破損してしまうが、石英ガ
ラス粉は熱膨張率が石英ガラスと同じであるため
にこの様な事がない。 In addition, when crystalline silica powder is used to increase the packing density to avoid contact with heating wires even when the quartz glass tube is bent, crystalline silica and quartz glass have different coefficients of thermal expansion. In other words, since crystalline silica has a larger coefficient of thermal expansion, the quartz glass tube will still be damaged, but quartz glass powder has the same coefficient of thermal expansion as quartz glass, so this does not occur.
又特に粉状のフイラーは標準粒径が10〜20μm
程度で、石英ガラスを飛翔化し粉砕して形成され
るものである為に一般にその外径はいわゆる球状
でなく星又は楔状をなしている為に離接するフイ
ラ同士の接触面上に必ず空気層が介在する事とな
り一層前記効果が促進される。 In particular, the standard particle size of powder filler is 10 to 20 μm.
Because it is formed by flying and pulverizing quartz glass, its outer diameter is generally not spherical but star-shaped or wedge-shaped, so there is always an air layer on the contact surface between the fillers that come and go. As a result, the above effect is further promoted.
「実施例」
以下、図面を参照して本考案の好適な実施例を
例示的に詳しく説明する。但しこの実施例に記載
されている構成部品の寸法、材質、形状、その相
対配置などは特に特定的な記載がない限りは、こ
の考案の範囲をそれのみに限定する趣旨ではな
く、単なる説明例に過ぎない。Embodiments Hereinafter, preferred embodiments of the present invention will be described in detail by way of example with reference to the drawings. However, unless otherwise specified, the dimensions, materials, shapes, and relative positions of the components described in this example are not intended to limit the scope of this invention, but are merely illustrative examples. It's nothing more than that.
図面は本考案の実施例に係る半導体ウエハの洗
浄装置を示す切欠斜視図で、石英ガラス製の処理
槽２と、該処理槽２内に配置されたヒータユニツ
ト１が開示されている。尚該処理槽２内には必要
に応じてバブリング管等が配置されるがこれら
は、本考案の要部構成でない為にその図示を省略
する。 The drawing is a cutaway perspective view showing a semiconductor wafer cleaning apparatus according to an embodiment of the present invention, and shows a processing tank 2 made of quartz glass and a heater unit 1 disposed within the processing tank 2. It should be noted that bubbling pipes and the like are arranged in the processing tank 2 as necessary, but illustration thereof is omitted since these are not essential components of the present invention.
ヒータユニツト１は処理槽２底面より槽垂直壁
に沿つてＬ字状に折曲して形成された石英ガラス
管ヒータ１０と該ヒータより導出されたリード線
３を槽内の洗浄液と非接触の状態で外部に導く石
英ガラス管製の導管４とからなり、両者１０，４
は気密的に一体的に嵌合されている。 The heater unit 1 includes a quartz glass tube heater 10 formed by bending an L-shape from the bottom of the processing tank 2 along the vertical wall of the tank, and a lead wire 3 led out from the heater in a non-contact manner with the cleaning liquid in the tank. It consists of a conduit 4 made of quartz glass tube that leads to the outside in the state, and both 10, 4
are integrally fitted in a hermetically sealed manner.
次にこれらの各部材の構成について説明する。 Next, the configuration of each of these members will be explained.
石英ガラス管ヒータ１０はＵ字状に形成した所
定直径の石英ガラス管１１内に、該ガラス管１１
内径より小なる直径でコイル状に巻回された抵抗
合金線１２を管軸線方向に沿つて、該ガラス管１
１内周径に対し非接触の状態を維持しながら収容
するとともに、該管１１内に粒径が10〜20μm程
度の石英ガラスフイラー１３を充填し、該フイラ
ー１３により前記合金線１２を石英ガラス管１１
内周面間に対し非接触の状態を維持して支持させ
る。 The quartz glass tube heater 10 includes a quartz glass tube 11 formed in a U-shape and having a predetermined diameter.
A resistance alloy wire 12 wound into a coil with a diameter smaller than the inner diameter is connected along the tube axis direction to the glass tube 1.
A quartz glass filler 13 having a particle size of about 10 to 20 μm is filled in the tube 11, and the alloy wire 12 is filled with quartz glass by the filler 13. tube 11
The inner peripheral surfaces are supported while maintaining a non-contact state.
そして前記フイラー１３を充填した石英ガラス
管１１は両端部を縮径しその縮径開口１１ａに、
ブツシユ状のコネクタ１４を取付け該コネクタ１
４を介して前記合金線１２とリード線３を電気的
に接続させる。 The quartz glass tube 11 filled with the filler 13 has its both ends reduced in diameter, and the diameter-reduced opening 11a is
Attach the bush-shaped connector 14 to the connector 1
The alloy wire 12 and the lead wire 3 are electrically connected through the wire 4.
そしてかかるヒータ１０の両端側にリード線３
が貫通する導管４を嵌合させるとともに、その嵌
合部１５を溶着させて両部材１１−４間を気密的
に封止する。 Lead wires 3 are connected to both ends of the heater 10.
The conduit 4 passing through the two members 11-4 is fitted, and the fitting portion 15 is welded to airtightly seal the space between the two members 11-4.
「考案の効果」
以上記載した如く本考案によれば、石英ガラス
管内に収納する合金線を中空保持する事なく石英
ガラス粉を用いて一体的に支持する事により、石
英ガラス管の割れやクラツクを大幅に低減し得る
石英ガラス管ヒータを提供する事が出来る。"Effect of the invention" As described above, according to the invention, the alloy wire housed in the quartz glass tube is not held hollow but is supported integrally using quartz glass powder, thereby preventing cracks and cracks in the quartz glass tube. It is possible to provide a quartz glass tube heater that can significantly reduce the
又本考案によれば前記石英ガラス粉が緩衝的機
能を有する為に、合金線との間で熱膨張率の差が
生じても破損やクラツク等が生じる事がない石英
ガラス管ヒータを提供する事が出来る。 Further, according to the present invention, since the quartz glass powder has a buffering function, there is provided a quartz glass tube heater that does not cause breakage or cracks even if a difference in thermal expansion coefficient occurs between the quartz glass powder and the alloy wire. I can do things.
更に本考案によれば、石英ガラス粉への充填が
容易であり、又該石英ガラス粉が充填した状態で
石英ガラス管を任意に折曲させる事も可能であ
り、製造上好ましい。 Further, according to the present invention, it is easy to fill the quartz glass powder, and the quartz glass tube can be arbitrarily bent while being filled with the quartz glass powder, which is preferable in terms of manufacturing.
図面は本考案の実施例に係る半導体ウエハの洗
浄装置を示す切欠斜視図である。
１２……電熱線、１１……石英ガラス管、１３
……石英ガラス粉。
The drawing is a cutaway perspective view showing a semiconductor wafer cleaning apparatus according to an embodiment of the present invention. 12... Heating wire, 11... Quartz glass tube, 13
...Quartz glass powder.
Claims (1)
る為に使用される石英ガラス管ヒータにおいて、 電熱線を収容した石英ガラス管内に、フイラー
状石英ガラス粉を充填し、該石英ガラス粉により
前記電熱線を石英ガラス管内周面間に対し非接触
の状態を維持して支持させた事を特徴とする石英
ガラス管ヒータ。[Scope of claim for utility model registration] In a quartz glass tube heater used to raise the temperature of various liquids used in semiconductor manufacturing processes, a quartz glass tube housing a heating wire is filled with filler-like quartz glass powder. A quartz glass tube heater, characterized in that the heating wire is supported by the quartz glass powder while maintaining a non-contact state between the inner peripheral surfaces of the quartz glass tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988132304U JPH0528713Y2 (en) | 1988-10-12 | 1988-10-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988132304U JPH0528713Y2 (en) | 1988-10-12 | 1988-10-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0254196U JPH0254196U (en) | 1990-04-19 |
| JPH0528713Y2 true JPH0528713Y2 (en) | 1993-07-23 |
Family
ID=31389142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988132304U Expired - Lifetime JPH0528713Y2 (en) | 1988-10-12 | 1988-10-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0528713Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615588A (en) * | 1979-07-17 | 1981-02-14 | Matsushita Electric Ind Co Ltd | Sheathed heater with safety element |
-
1988
- 1988-10-12 JP JP1988132304U patent/JPH0528713Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615588A (en) * | 1979-07-17 | 1981-02-14 | Matsushita Electric Ind Co Ltd | Sheathed heater with safety element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0254196U (en) | 1990-04-19 |
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