JPH05283749A - Temperature detecting device - Google Patents
Temperature detecting deviceInfo
- Publication number
- JPH05283749A JPH05283749A JP4105991A JP10599192A JPH05283749A JP H05283749 A JPH05283749 A JP H05283749A JP 4105991 A JP4105991 A JP 4105991A JP 10599192 A JP10599192 A JP 10599192A JP H05283749 A JPH05283749 A JP H05283749A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- voltage
- diode
- current
- detecting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はＰＮ接合ダイオードを用
いた温度検出装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature detecting device using a PN junction diode.
【０００２】[0002]
【従来の技術】従来の温度検出装置としては、周知のよ
うに熱電対が多く用いられている。2. Description of the Related Art As a known temperature detecting device, a thermocouple is often used.
【０００３】[0003]
【発明が解決しようとする課題】しかし従来の温度測定
装置によると、微小領域の温度測定やＩＣチップ上の温
度測定をすることは容易ではなかった。However, according to the conventional temperature measuring device, it is not easy to measure the temperature of a minute area or the temperature on the IC chip.
【０００４】本発明の目的はＩＣチップ内又は同一パッ
ケージ内に作り込む等を可能にしたマイクロ温度計とし
て使用できるようにした温度検出装置を提供するにあ
る。An object of the present invention is to provide a temperature detecting device which can be used as a micro thermometer which can be built in an IC chip or in the same package.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本願の第１の発明による温度検出装置は、ＰＮ接合
ダイオード素子と、上記ＰＮ接合ダイオード素子に定電
流を供給する定電流源と、上記ＰＮ接合ダイオード両端
の電圧を計測する電圧測定手段と、を含むことを要旨と
する。また本願の第２の発明による温度検出装置は、Ｐ
Ｎ接合ダイオードと、該ダイオードに電圧を供給する電
圧源と、該ダイオードに流れる電源を計測する電流測定
手段と、を含むことを要旨とする。In order to achieve the above object, a temperature detecting device according to the first invention of the present application comprises a PN junction diode element, a constant current source for supplying a constant current to the PN junction diode element, The gist of the present invention is to include voltage measuring means for measuring the voltage across the PN junction diode. The temperature detecting device according to the second invention of the present application is
The gist of the present invention is to include an N-junction diode, a voltage source that supplies a voltage to the diode, and a current measuring unit that measures a power supply flowing through the diode.
【０００６】[0006]
【作用】ある不純物濃度を有する半導体は、ある温度範
囲でフェルミレベルが変化するためＰＮ接合ダイオード
の拡散電位は、その温度範囲では、温度に依存する。本
発明の温度測定装置は、順方向の電圧電流特性が温度に
依存することを利用し温度を検出する。In a semiconductor having a certain impurity concentration, the Fermi level changes in a certain temperature range, so that the diffusion potential of the PN junction diode depends on the temperature in that temperature range. The temperature measuring device of the present invention detects the temperature by utilizing the fact that the forward voltage-current characteristic depends on the temperature.
【０００７】[0007]
【実施例】以下図面に示す本発明の実施例を説明する。
図１は本発明の第１の実施例で、１はＰＮ接合ダイオー
ド、２は定電流源、３は電圧計である。Embodiments of the present invention shown in the drawings will be described below.
1 is a first embodiment of the present invention, in which 1 is a PN junction diode, 2 is a constant current source, and 3 is a voltmeter.
【０００８】図１の実施例でＰＮ接合ダイオード１には
定電流源２より順方向電流Ｉを流しその時の電圧Ｖを電
圧計３で読む。この電圧電流（Ｖ−Ｉ）特性は図４に示
すように温度依存性を持っており、ある設定電流値にな
る電圧をＶthとすると、Ｖthと温度Ｔとの間には図５の
ような相関がある。この相関特性を初めに求めておくこ
とにより、温度を知ることができる。In the embodiment of FIG. 1, a forward current I is made to flow from the constant current source 2 to the PN junction diode 1, and the voltage V at that time is read by the voltmeter 3. The voltage-current (V-I) characteristic has a temperature dependence as shown in FIG. 4, when a voltage that causes the set current value is V th, is between V th and the temperature T in FIG. 5 There is such a correlation. The temperature can be known by first obtaining this correlation characteristic.
【０００９】例えば、このＰＮ接合ダイオード１をＳｉ
で作る場合、Ｓｉにドープされる不純物濃度をパラメー
タとしたフェルミレベルＥFと温度Ｔの関係は図２のよ
うになっている。従って、ＰＮ接合ダイオード１のエネ
ルギーバンドは、低温時と高温時で、図３（ａ），
（ｂ）に示すように異なる。このことが図４のような温
度に依存したＩ−Ｖ特性を示す原理である。Ｓｉを用い
た場合Ｐ，Ｎのいずれも１０17cm-3程度の不純物濃度と
することにより、１００Ｋ〜６００Ｋの温度範囲での温
度測定が可能である。For example, this PN junction diode 1 is made into Si
In the case of the above method, the relationship between the Fermi level E F and the temperature T with the impurity concentration of Si doped as a parameter is as shown in FIG. Therefore, the energy band of the PN junction diode 1 is as shown in FIG.
Different as shown in (b). This is the principle of showing the temperature-dependent IV characteristic as shown in FIG. When Si is used, it is possible to measure the temperature in the temperature range of 100K to 600K by setting the impurity concentration of both P and N to be about 10 17 cm -3 .
【００１０】もちろん、測定温度範囲に合わせた半導体
材料と不純物濃度を選ぶのが良いのは言うまでもない。
上記第１の実施例では、定電流Ｉを流し電圧Ｖを読む方
法でとるとしたが、図６の第２の実施例に示す如く、Ｐ
Ｎ接合ダイオード１に対し逆に定電圧源４より定電圧Ｖ
をかけ、電流計５により電流Ｉの値を読むようにしても
よい。Of course, it is needless to say that it is better to select the semiconductor material and the impurity concentration according to the measurement temperature range.
In the first embodiment, the constant current I is passed and the voltage V is read. However, as shown in the second embodiment of FIG.
Contrary to the N-junction diode 1, a constant voltage V is supplied from the constant voltage source 4.
The value of the current I may be read by the ammeter 5 by multiplying by.
【００１１】[0011]
【発明の効果】以上説明したように本発明によれば、例
えば、本発明のＩＣチップ内に一緒に作り込むことが可
能となるため、本検出装置を含む１チップの温度計や温
度コントロールＩＣ等を製造することができる。さらに
マイクロ温度計として各分野への応用が期待できる。ま
たＩＣ内に本装置を多数作り込むことによりＩＣ内の温
度分布測定も可能となる。As described above, according to the present invention, for example, since it is possible to make a chip in the IC chip of the present invention together, a one-chip thermometer or temperature control IC including the present detection device can be provided. Etc. can be manufactured. Furthermore, it can be expected to be applied to various fields as a micro thermometer. In addition, the temperature distribution in the IC can be measured by incorporating a large number of this device in the IC.
【００１２】なお、図２〜図５において、ＥCは伝導帯
（conduction band）最下端のエネルギーレベル、ＥVは
価電子帯（valence band）最上端のエネルギーレベル、
ＥFはフェルミレベル Ｅiは真性フェルミレベル（intrinsic level） Ｔａ，Ｔｂ，Ｔｃ，Ｔｄ，Ｔは夫々温度（Ｔａ＜Ｔｂ＜
Ｔｃ＜Ｔｄ）を示す。Ｖthはある設定電流値となるのに
必要な電圧Ｖ2 to 5, E C is the lowest energy level of the conduction band, E V is the highest energy level of the valence band,
E F is the Fermi level E i is the intrinsic Fermi level (intrinsic level) Ta, Tb, Tc, Td, T are the temperature (Ta <Tb <
Tc <Td) is shown. V th is the voltage V required to reach a certain set current value
【図１】本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing an embodiment of the present invention.
【図２】Ｓｉにドープされる不純物濃度をパラメータと
したフェルミレベルＥFと温度Ｔとの関係を示す特性図
である。FIG. 2 is a characteristic diagram showing the relationship between the Fermi level E F and the temperature T with the concentration of impurities doped in Si as a parameter.
【図３】ＰＮ接合ダイオードのエネルギーバンドの低温
時と高温時での特性図である。FIG. 3 is a characteristic diagram of an energy band of a PN junction diode at low temperature and at high temperature.
【図４】ＰＮ接合ダイオードの温度をパラメータとする
Ｉ−Ｖ特性図である。FIG. 4 is an IV characteristic diagram in which the temperature of the PN junction diode is a parameter.
【図５】ある設定電流値となるのに必要な電圧Ｖthと温
度Ｔとの関係を示す特性図である。FIG. 5 is a characteristic diagram showing a relationship between a voltage V th and a temperature T required to reach a certain set current value.
１ ＰＮ接合ダイオード ２ 定電流源 ３ 電圧計 ４ 定電圧源 ５ 電流計 1 PN junction diode 2 Constant current source 3 Voltmeter 4 Constant voltage source 5 Ammeter
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年２月１６日[Submission date] February 16, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図６[Name of item to be corrected] Figure 6
【補正方法】追加[Correction method] Added
【補正内容】[Correction content]
【図６】本発明の第２の実施例を示す回路図である。FIG. 6 is a circuit diagram showing a second embodiment of the present invention.
Claims (2)
源と、 上記ＰＮ接合ダイオード両端の電圧を計測する電圧測定
手段と、を含むことを特徴とする温度検出装置。1. A temperature including a PN junction diode element, a constant current source for supplying a constant current to the PN junction diode element, and voltage measuring means for measuring a voltage across the PN junction diode. Detection device.
を含むことを特徴とする温度検出装置。2. A PN junction diode, a voltage source for supplying a voltage to the diode, and a current measuring means for measuring a power supply flowing through the diode,
A temperature detecting device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4105991A JPH05283749A (en) | 1992-03-31 | 1992-03-31 | Temperature detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4105991A JPH05283749A (en) | 1992-03-31 | 1992-03-31 | Temperature detecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05283749A true JPH05283749A (en) | 1993-10-29 |
Family
ID=14422198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4105991A Pending JPH05283749A (en) | 1992-03-31 | 1992-03-31 | Temperature detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05283749A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001098790A1 (en) * | 2000-06-21 | 2001-12-27 | Braun Gmbh | Method and circuit for measuring a voltage or a temperature and for generating a voltage with any predeterminable temperature dependence |
| US6896408B2 (en) | 2003-03-19 | 2005-05-24 | Oki Electric Industry Co., Ltd. | Temperature detection from differences in off leak currents of NMOS and PMOS transistors on CPU chip |
| KR100575863B1 (en) * | 1999-10-21 | 2006-05-03 | 주식회사 하이닉스반도체 | Method for measuring the junction temperature of semiconductor device |
| KR100643209B1 (en) * | 2005-05-26 | 2006-11-10 | (주)새론 | Apparatus of calculating thermal property of light emitting diode and method of measuring junction temperature thereof |
| JP2008080130A (en) * | 2006-09-28 | 2008-04-10 | Covidien Ag | Temperature sensing return electrode pad |
-
1992
- 1992-03-31 JP JP4105991A patent/JPH05283749A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100575863B1 (en) * | 1999-10-21 | 2006-05-03 | 주식회사 하이닉스반도체 | Method for measuring the junction temperature of semiconductor device |
| WO2001098790A1 (en) * | 2000-06-21 | 2001-12-27 | Braun Gmbh | Method and circuit for measuring a voltage or a temperature and for generating a voltage with any predeterminable temperature dependence |
| US6896408B2 (en) | 2003-03-19 | 2005-05-24 | Oki Electric Industry Co., Ltd. | Temperature detection from differences in off leak currents of NMOS and PMOS transistors on CPU chip |
| KR100643209B1 (en) * | 2005-05-26 | 2006-11-10 | (주)새론 | Apparatus of calculating thermal property of light emitting diode and method of measuring junction temperature thereof |
| JP2008080130A (en) * | 2006-09-28 | 2008-04-10 | Covidien Ag | Temperature sensing return electrode pad |
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