JPH05282629A - Magneto-resistance effect type magnetic head - Google Patents

Abstract

PURPOSE:To decrease the fluctuations in electromagnetic intensity for biasing by forming the above head of two-layered films; a magneto-resistance effect film consisting of an alloy contg. Ni, Fe and Co as essential components and a shunt film consisting of an alloy contg. Ta as an essential component. CONSTITUTION:A lower magnetic shielding layer 4 is laminated via an inflating layer 13 on a substrate 2 and an insulating layer 5 forming a gap layer is then formed thereon. The magneto-resistance effect film 6, a diaferromagnetic film 7 for stabilizing magnetic domains and the Ta alloy shunt film 6 are continuously formed by using a vapor deposition method and a sputtering method thereon. After an electrode film 9 is formed, a soft magnetic bias film 10 is laminated and further, an insulating layer 11, an upper magnetic shielding film 12 and an insulating layer 13 are laminated. An NiFe alloy film or NiCo alloy film or NiFeCo alloy film is used for the film 6 and a Ta alloy film is used for the film 8. An FeMnRu alloy film or FeMn alloy film is used for the film 7. As a result, head characteristics, such as S/N are improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic head for a magnetic recording device, and more particularly to a magnetic head using a shunt bias type magnetoresistive effect element having a bias applying shunt film, which is suitable for reading high density magnetic recording. And a magnetoresistive effect magnetic head.

[0002]

2. Description of the Related Art A shunt film of a conventional shunt bias type magnetoresistive head is disclosed in, for example, US Pat. No. 6,94,764.
, Ti, Ta, M
o, Nb, etc. are described in JP-A-2-68706 as Ti, Cr,
Ta, Zr, Hf, TiW alloys, etc. are disclosed in JP-A-2-220213.
Cr, Ta, W, Nb, etc. are used in the publication.

A Ni-Fe alloy film, a Ni-Co alloy film or a Ni-Fe-Co film is usually used as the magnetoresistive effect film, but the shunt film is composed of these magnetoresistive effect film and two-layer film. Used in the state, usually 10 ⁶ A
A current of / cm ² or more is caused to flow in both films to generate a bias magnetic field in the shunt film and a resistance change due to magnetoresistance in the magnetoresistive film. The property required for the shunt film is that the electric resistance value is an appropriate value for the magnetoresistive film so that a shunt current that optimizes the bias magnetic field occurs in the two-layer film including the magnetoresistive film. In the manufacturing process of the magnetoresistive effect element, there is no reaction that deteriorates the magnetoresistive effect film, the corrosion resistance is excellent, the film is easily formed, and the variation in electric resistance is small. The condition must be met.

Considering the reaction with the magnetoresistive effect film in the above-mentioned prior art, Ti reacts with the magnetoresistive effect film at 175 to 200 ° C. as described in JP-A-62-183003, and M
Although o and Zr do not react up to about 350 ° C., they have poor corrosion resistance and high electric resistance, Cr and their alloys have low reaction temperatures like Ti, and other conventional techniques also show the same characteristics as the shunt film except Ta. .. Ta has a high reaction initiation temperature with the magnetoresistive film and also has excellent corrosion resistance, and is an excellent material as a shunt film. Usually, the electric resistance of a Ta film formed by vapor deposition or sputtering is 10 to 25 μΩcm, but there is a drawback that the electric resistance is likely to change due to the influence of residual oxygen and nitrogen in the film forming atmosphere. Further, in order to improve the output of the magnetoresistive head, it is necessary to use a thinner magnetoresistive film, and the shunt film must be thin accordingly. The magnetoresistive film has a thickness of 5 to 50 nm, but the mean free path of electrons in the metal film is about 30 nm, and the magnetoresistive film has a thickness of 30 nm.
At about nm, the phenomenon in which electrons collide with the surface of the film and are scattered becomes remarkable. Therefore, in the shunt film having a thickness of 30 nm or less, the variation in electric resistance becomes extremely remarkable.
Although control of the film thickness and electric resistance is indispensable for controlling the bias magnetic field, in the case where the Ta film is manufactured by a normal forming method,
Variation in electrical resistance in this film thickness region is 20 to 30%
Also reaches. Since the variation in the film thickness also overlaps with this, it has a great influence on the control of the shunt current with the magnetoresistive effect film, and it is extremely difficult to manufacture a shunt bias type magnetoresistive effect head having good characteristics with no variation.

[0005]

As described above, in the conventional magnetoresistive head, the magnetoresistive film has 5 to 3 parts.
No consideration was given to the reduction of variations in the electrical resistance of the shunt film when it became extremely thin as 0 nm, and there was no shunt bias type magnetoresistive head having good characteristics with no variations and a manufacturing method thereof.

An object of the present invention is to provide a shunt film most suitable for a high output head of a shunt bias type magnetoresistive head, particularly a thin magnetoresistive film.

[0007]

In order to achieve the above object, in the magnetoresistive head of the present invention, a high melting point metal is added to Ta to obtain a high corrosion resistance and a favorable magnetoresistive film. The object is to adjust the electric resistance value without impairing the reaction characteristics and solve the drawbacks of the conventional Ta.

When the shunt film is formed by adding the second element to Ta, the addition amount must be in a range suitable for shunting with the magnetoresistive film. This value is preferably up to about three times the electric resistance of the magnetoresistive film. If the resistance is too high, the thickness of the shunt film must be increased, so that the dissipation of heat generated by the current is deteriorated and the life of the element is extremely shortened. Also, the gap of the shield type magnetoresistive effect element cannot be reduced.

When an element is added to Ta, it generally becomes a solid solution when the addition amount is small, but it is composed of an intermetallic compound peculiar to the alloy system and a solid solution of Ta except for the alloy system of total solid solution.
It becomes a phase structure, and the increase of electric resistance and its variation,
Corrosion resistance is deteriorated. Therefore, it needs to be in a solid solution state. That is, since the two-phase structure changes greatly depending on the heat treatment conditions, the change in electric resistance is remarkable. Regarding the reaction with the magnetoresistive film, the melting point of the alloy becomes lower due to the alloying of Ta, so that the reaction start temperature becomes lower. Therefore, the melting point of the Ta alloy needs to be about 2000 ° C. or higher.

If the temperature is 2000 ° C. or lower, the reaction initiation temperature with the magnetoresistive film becomes 350 ° C. or lower, which is not preferable in terms of heat resistance. The range of the element addition amount of the Ta alloy satisfying these conditions varies depending on the addition element, and the electrical resistance, the corrosion resistance, the reaction initiation temperature with the magnetoresistive effect film, and the like must be determined in detail for each alloy system.

[0011]

[Function] By adding the second element to Ta, pure Ta
The electric resistance is increased as compared with. T per unit amount added
Although the amount of increase in the electrical resistance of the alloy a depends on the type of the additive element, it is generally linear in the region where the amount of addition is small as shown in FIG. 1, and deviates from the straight line as the amount of addition increases. As described above, the electric resistance of the Ta film varies depending on the manufacturing method, but also greatly changes depending on the purity of Ta and the additive element used. In the following, description will be given with reference to the case where a raw material having a purity of 99.9 to 99.999 wt% which is usually used industrially is used.

Among the electric resistances shown in FIG. 1, the range of electric resistance values that can be used for the shunt film is up to three times that of the magnetoresistive film as described above. In the above-mentioned magnetoresistive film, the electric resistance when the film thickness is 5 to 30 nm is 15 to
The electric resistance of the Ta alloy film as the shunt film is 30 μΩcm, and the electric resistance is up to about 90 μΩcm. Within this range, the Ta alloy film can be used as the shunt film.

Next, regarding the reaction with the magnetoresistive effect film, as a result of investigating the reaction between the Ta alloy film having various melting points by alloying and the above-mentioned magnetoresistive effect film, as shown in FIG. The reaction start temperature of is proportional to the melting point of the alloy, and the required heating temperature in the manufacturing process of the magnetoresistive head is 300
If the temperature is set to 0 ° C, the reaction initiation temperature must be 10 to 20% higher than that, and if the temperature is set to 350 ° C, an alloy composition satisfying this must be selected. From the relationship shown in FIG. 2, the melting point of Ta alloy satisfying the reaction temperature of 350 ° C. is 2000 ° C. or higher.

Regarding the variation of the electric resistance, as shown in FIG. 3, the film thickness dependence of the electric resistance of the Ta alloy with respect to Ta shifts to the high resistance side as a whole. In FIG.
The resistance value of the region where the electric resistance of Ta does not depend on the film thickness is ρ ₀
Let ρ _{t be} the resistance value of the film thickness dependent region, ρ _{01 be} the resistance value of the Ta alloy film thickness independent region, and ρ _t1 be the film thickness dependent region resistance value of (ρ (ρ _t1 −ρ ₀₁ ) / ρ ₀₁ is smaller than _t −ρ ₀ ) / ρ ₀ . Also, more of the [Delta] [rho] ₀₁ Comparing the [Delta] [rho] ₀₁ of the Ta film of the electric resistance variation [Delta] [rho] ₀ and Ta alloy in the region where a film thickness dependency is reduced.

In order to cope with the high density of the magnetic recording device,
It is necessary to reduce the film thickness of the magnetoresistive film to increase the current, and the diversion ratio of the shunt film and the magnetoresistive film varies due to the above-mentioned causes as the film thickness decreases. In order to reduce this variation, it is necessary for the power supply for energizing the device to have a circuit function for reducing the variation.
However, the present invention significantly reduces the burden on the power supply.
At the same time, the reproduction error rate of the signal during recording and reproduction is also reduced, so that the load on the error correction circuit is significantly reduced. Therefore, a magnetic memory device having an extremely low error rate is realized.

Due to the above-mentioned actions, as compared with the Ta film,
Variations in the electrical resistance of the Ta alloy film are reduced, and variations in the bias magnetic field strength and output characteristics of the magnetoresistive effect element are reduced.

[0017]

【Example】

<Example 1> T obtained by adding 1 to 35 at% of Ti to Ta
An a-Ti alloy was produced by a vacuum melting method, and a source for electron beam evaporation and a sputtering target were cut out from this. FIG. 4 shows the Ti addition amount dependency of the electrical resistance of a thin film deposited by electron beam evaporation and sputtering on a glass substrate using these materials. The film thickness is typically 100 nm in a region where the electric resistance does not depend on the film thickness and 20 n in a region where the film surface depends on which electrons are scattered by the film surface.
The case of m is shown. Here, the electric resistance is shown with reference to the electric resistance of Ta.

The electric resistance of the Ta-Ti alloy film is such that the Ti content is 1
No significant increase is shown up to at%, the increase becomes clear at 1 at% or more, increases almost linearly up to 25 at%, and increases sharply at 25 at% or more.
As described above, the resistance of the metal film used for the shunt film of the magnetoresistive effect element is preferably 1 to 3 times the resistance of the magnetoresistive effect film, and the resistance of the normally manufactured magnetoresistive effect film is 15 to
Since it is 30 μΩcm, the resistance of Ta alloy that can be used for the shunt film is about 90 μΩcm, and if this is the upper limit, the Ti addition amount that can be used for the shunt film is 1 to 25 at%.
In addition, considering the amount of addition of Ti in the region where the effect of (ρ _t1 −ρ ₀₁ ) / ρ ₀₁ becomes remarkable, T
More effective addition amount of i is 5 to 25 at%. The reason why the increase in resistance is small when the amount of addition of Ti is low is that the Ti reacts with residual gas such as oxygen in the atmosphere during the film formation process such as vapor deposition to reduce the amount of impurity gas mixed into Ta. It is estimated to be.

When the amount of Ti is in the range of 1 to 5 at%, the resistance increase of the Ta alloy film is not remarkable, but the variation in resistance is about 1/3 to 1 as compared with the Ta film due to the gettering effect of Ti.
It is reduced to / 2. Therefore, when Ti is added, there is an effect of reducing variations in the electric resistance of the shunt film due to the getter effect.

On the other hand, as shown in FIG. 5, the reaction between the Ni-19at% Fe alloy film, which is the magnetoresistive film, and the Ta-Ti alloy film was examined by heat treatment in vacuum. The reaction temperature was Ti addition. As the amount increases, it becomes 350 ° C. or lower near Ta-28 at% Ti. Therefore, a Ta-Ti alloy containing 28 at% Ti or more is not practical as a shunt film when the temperature exceeds 300 ° C, although it depends on the maximum heat treatment temperature in the head manufacturing process.

After the above examination, Ta, Ta-1a
t% Ti, Ta-5 at% Ti, Ta-10 at% T
i, Ta-20 at% Ti, Ta-25 at% Ti, T
An a-39 at% Ti film is used as a shunt film, and as a magnetoresistive effect film, Ni-19 at% Fe, Ni-50 at% C is used.
A magnetoresistive head was produced using o, Ni-10 at% Fe-9 at% Co. As a result, variations in the bias magnetic field strength of the head due to variations in the electrical resistance of the shunt film are compared by the vertical asymmetry of the waveform of the head output, and in the case of the Ta-Ti alloy, variations in both are found compared with the case of Ta. It decreased from 1/3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that the variation in head characteristics was reduced by the effect of reducing the variation in electric resistance of the shunt film.

<Embodiment 2> Ta in the same manner as in Embodiment 1
The electrical resistance and variation of Ta-Zr alloy in which 0.5 to 35 at% of Zr was added were investigated. As shown in FIG. 6, in the case of the Ta-Zr alloy film, the Zr amount does not show a significant increase up to 0.5 at%, and the increase becomes clear when the Zr amount is 0.5 at% or more, and is almost linear up to 15 at%. It increases, and a sharp increase is seen at 15 at% or more. It is considered that such a rapid increase in resistance is due to the formation of a two-phase structure, but as described above, the resistance of the metal film used for the shunt film of the magnetoresistive effect element is 1 to 1 3 times is desirable, and if the upper limit of the resistance of Ta alloy that can be used for the shunt film is about 90 μΩcm, the amount of Zr addition that can be used for the shunt film is 0.5 to 15 at%.

Considering the added amount of Zr in the region where the effect of (ρ _t1 −ρ ₀₁ ) / ρ ₀₁ becomes remarkable, Z
More effective addition amount of r is 2.5 to 15 at%.
When the amount of added Zr is low, the increase in resistance is not so great that the amount of impurity gas mixed in Ta by reacting with residual gas such as oxygen in the atmosphere of Zr reacts with Ti in the process of film formation such as vapor deposition. It is estimated that the getter effect is reduced.

When the amount of Zr is in the range of 0.5 to 2.5 at%,
Although the increase in resistance of the Ta alloy film is not remarkable, the variation in resistance is about 1 / compared to that of the Ta film due to the getter effect of Zr.
It is reduced to 3 to 1/2. Therefore, the addition of Zr also has the effect of reducing the variation in the electric resistance of the shunt film due to the getter effect. On the other hand, the magnetoresistive film Ni-
The reaction between the 19 at% Fe alloy film and the Ta-Zr alloy film was examined by heat treatment in a vacuum, and the reaction temperature was maintained at 350 ° C or higher without any significant change even when the amount of Zr added was increased. However, a Ta-Zr alloy of 17 at% Zr or more is not practical as a shunt film because its corrosion resistance is significantly reduced.

After the above examination, Ta, Ta-0.
5 at% Zr, Ta-2.5 at% Zr, Ta-5 at%
Zr, Ta-7.5 at% Zr, Ta-10 at% Z
r, Ta-12.5 at% Zr, Ta-15 at% Zr
Is used for the shunt film and Ni-19a is used as the magnetoresistive film.
t% Fe, Ni-50at% Co, Ni-10at% F
A magnetoresistive head was manufactured using e-9 at% Co. As a result, variations in the bias magnetic field strength of the head due to variations in the electrical resistance of the shunt film are compared by the vertical asymmetry of the waveform of the head output, and in the case of Ta-Zr alloy, the variations are inferior to those in the case of Ta. It decreased from 1/3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that the variation in head characteristics was reduced by the effect of reducing the variation in electric resistance of the shunt film.

<Embodiment 3> In the same manner as in Embodiments 1 and 2, Ta- in which 1 to 35 at% of V is added to Ta-
The electric resistance of the V alloy and its variation were examined, and the amount of V added that could be used in the shunt film was examined.
A range of -20 at% is effective (Fig. 6). In the case of adding V as well, the resistance increases drastically at 20 at% or more.
When the reaction between the i-19 at% Fe alloy film and the Nb-V alloy film was heat-treated in a vacuum and examined, the reaction temperature decreased with an increase in the addition amount of V, and the reaction temperature was 350 at around Ta-22 at% V.
It becomes below ℃. Therefore, Ta- of 22 at% V or more
The V alloy is not practical as a shunt film when it exceeds 300 ° C., although it depends on the maximum heat treatment temperature in the head manufacturing process. Further, the resistance change of the Ta film is small when V is added at 3 at% or less, but the large effect of reducing the variation in the electric resistance of the shunt film cannot be seen without adding 3 at% or more.

In the case of V as well, the reduction in resistance variation in the range where the amount of addition is small is considered to be mainly due to the gettering effect of V, but the gettering effect of V is weaker than that of Ti or Zr, so the amount of addition needs to be increased slightly. It seems that there is. However, the variation in resistance when adding 3 at% or more is about 1/3 of that of the Ta film as in the case of adding Ti and Zr.
It has become ~ 1/2.

After the above examination, as in the case of adding Ti and Zr, a Ta-V alloy film was used for the shunt film, and Ni-19 at% Fe and Ni-50 at% C were used as the magnetoresistive film.
As a result of manufacturing a magnetoresistive head using o, Ni-10 at% Fe-9 at% Co, the variation in the bias magnetic field strength of the head due to the variation in the electrical resistance of the shunt film is compared by the vertical asymmetry of the waveform of the head output. And Ta
Compared to the case of the film, it was reduced from 1/3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% of Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that the variation in head characteristics was also reduced due to the effect of reducing the variation in electric resistance of the shunt film.

<Embodiment 4> In the same manner as in Embodiments 1 and 2, the electric resistance of Ta-Hf alloy in which 0.5 to 35 at% of Hf is added to Ta and its variation are examined.
As a result of examining the amount of Hf added that can be used in the shunt film,
In the case of f, the range of 1 to 25 at% is effective (FIG. 6). In the case of adding Hf as well, the resistance is significantly increased at 25 at% or more. Further, considering the amount of Hf added in the region where the effect of (ρ _t1 −ρ ₀₁ ) / ρ ₀₁ becomes remarkable,
It is more effective that the addition amount of f is 5 to 25 at%. Furthermore, when the reaction between the Ni-19 at% Fe alloy film and the Ta-Hf alloy film was examined by heat treatment in a vacuum, the reaction temperature was in the vicinity of Ta-27 at% Hf as the amount of Hf added increased. It will be below 350 ° C. Therefore, 27 at% H
A Ta-Hf alloy of f or more is not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C. In addition, the resistance change of the Ta film is H of 1 at% or less.
Although the addition of f is small, the effect of reducing the variation in electric resistance of the shunt film cannot be seen unless 1 at% or more is added.
The variation in resistance when 1 at% or more is added is Ti, Z
Similar to the addition of r, it becomes about 1/3 to 1/2 as compared with the Ta film.

After the above examination, as in the case of adding Ti and Zr, a Ta-Hf alloy film was used as the shunt film, and Ni-19at% Fe and Ni-50at% were used as the magnetoresistive film.
As a result of manufacturing a magnetoresistive head using Co and Ni-10 at% Fe-9 at% Co, variations in the bias magnetic field strength of the head due to variations in the electrical resistance of the shunt film are compared by the vertical asymmetry of the waveform of the head output. And then T
Compared to the case of the film a, the values were reduced from 1/3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that the variation in head characteristics was reduced due to the effect of reducing variation in electric resistance of the shunt film.

<Embodiment 5> In the same manner as in Embodiments 1 and 2, Ta containing 0.5 to 35 at% of W is added to N.
The electrical resistance of the b-W alloy and its variation were investigated. T
In the case of the a-W alloy film, the W content does not show a significant increase up to 0.5 at%, and the increase becomes clear when the W content exceeds 0.5 at%, and increases almost linearly up to 15 at%.
A sharp increase is seen when the percentage is over (Fig. 6). As described above, the resistance of the metal film used for the shunt film of the magnetoresistive effect element is preferably 1 to 3 times the resistance of the magnetoresistive effect film,
The upper limit of the resistance of Ta alloy that can be used for the shunt film is about 90 μΩ
If it is cm, the amount of W that can be used for the shunt film is 0.5-
It becomes 15 at%. In addition, the above (ρ _t1 −ρ ₀₁ ) / ρ ₀₁
Considering the amount of W added in the region where the effect of 1 becomes significant, it is considered that the added amount of W is more effective at 2.5 to 15 at%.
However, in the case of W, the magnetoresistance effect film Ni-
When the reaction with the 19 at% Fe alloy film and the corrosion resistance were examined, the reaction temperature was maintained at 350 ° C. or higher with no significant change even when the addition amount was 15 at%, but the corrosion resistance was significantly reduced by the addition of W. From the viewpoint of this corrosion resistance, it was found that a Ta-W alloy of 11 at% or more is not practical as a shunt film. Therefore, in the case of W, the addition amount of 0.5 to 10 at% is appropriate for the shunt film, and the variation in resistance of the Ta-W alloy film in this range is
It was reduced to about 1/3 to 1/2 as compared with the Ta film. Therefore, it is considered that the addition of W also has the effect of reducing the variation in the electric resistance of the shunt film.

After the above examination, as in the case of adding Ti and Zr, a Ta-W alloy film is used as a shunt film and Ni-19at% Fe and Ni-50at are used as a magnetoresistive film.
As a result of manufacturing a magnetoresistive head using% Co and Ni-10 at% Fe-9 at% Co, variations in the bias magnetic field strength of the head due to variations in the electrical resistance of the shunt film are due to the vertical asymmetry of the head output waveform. Compared to,
Compared to the case of the Ta film, it decreased from 1/3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% of Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that the variation in head characteristics was reduced due to the effect of reducing variation in electric resistance of the shunt film.

<Embodiment 6> In the same manner as in Embodiment 1 and Embodiment 2, Ta-Nb alloy in which 0.5 to 35 at% of Nb was added to Ta was examined for electrical resistance and its variation, and used for a shunt film. As a result of examining the amount of Nb that can be added, in the case of Nb, the range of 3 to 25 at% is effective.
In the case of adding Nb as well, the resistance increased significantly at 25 at% or more (FIG. 6), and the reaction temperature with the Ni-19 at% Fe alloy film was Ta-27 at% due to the increase in the addition amount of Nb.
It becomes 350 ° C. or lower near Nb. Therefore, 27 at
% -Nb or more Ta-Nb alloy is not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C. The effect of reducing the variation in the electrical resistance of the shunt film by adding Nb in the range of 3 to 25 at% is Ti, Z
Approximately 1/3 to 1/2 compared to Ta film as in the case of adding r
I confirmed.

After the above examination, the Ta-3 to 25 at% Nb alloy film was used as the shunt film as in the case of adding Ti and Zr, and Ni-19 at% Fe and Ni were used as the magnetoresistive film.
-50 at% Co, Ni-10 at% Fe-9 at% C
As a result of manufacturing the magnetoresistive head using o, the variation in the bias magnetic field strength of the head due to the variation in the electric resistance of the shunt film is compared by the vertical asymmetry of the waveform of the head output and compared with the case of the Ta film. All decreased from 1/3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% of Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that the variation in head characteristics was also reduced due to the effect of reducing the variation in electric resistance of the shunt film.

Example 7 Ta-R prepared by adding 0.5 to 35 at% Ru to Ta in the same manner as in the above example.
The electrical resistance of the u alloy and its variation were examined, and the amount of Ru added that could be used in the shunt film was examined. As a result, Ru
In the case of, if Ta is added up to 35 at%, Ta
Resistance increases linearly, and the resistance value is within a range not exceeding about 90 μΩcm of the resistance value of Ta alloy usable for the shunt film. Therefore, when the amount of addition was further increased and Ru was added up to 40 at% and the resistance change of Ta was examined, 3
It was found that the resistance was significantly increased when it exceeded 5 at% (FIG. 6). In view of these resistance changes, the amount of Ru added that can be used for the shunt film is 2 to 35 at%.

Next, a Ni-19 at% Fe alloy film and Ta were formed.
The reaction of the -Ru alloy film and the corrosion resistance of the Ta-Ru alloy film were investigated, but the reaction temperature was T by increasing the addition amount of Ru.
The temperature becomes 350 ° C. or lower in the vicinity of a-37 at% Ru, and therefore a Ta-Ru alloy having 37 at% Ru or higher is not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C. On the other hand, Ta-Ru
There is no problem with the corrosion resistance of the alloy film, rather Ru
The addition improves the corrosion resistance of the Ta film, resulting in a very favorable result. The effect of reducing the variation in the electric resistance of the shunt film by adding Ru in the range of 2 to 35 at% is Ti, Z
Approximately 1/3 to 1/2 compared to Ta film as in the case of adding r
I confirmed. Although the change in resistance is small when Ru is added at 2 at% or less, the effect of reducing the variation is not so large, so addition of Ru at 2 at% or more is effective.

After the above examination, as in the case of adding Ti, Zr, etc., Ta-2 to 35 at% Ru alloy film is used for the shunt film, and Ni-19 at% F is used as the magnetoresistive film.
e, Ni-50 at% Co, Ni-10 at% Fe-9
As a result of manufacturing a magnetoresistive head using at% Co, the variation in the bias magnetic field strength of the head due to the variation in the electric resistance of the shunt film is compared with the vertical asymmetry of the waveform of the head output. 1 in comparison
It decreased from / 3 to 1/2 or less.

A similar study was conducted on N containing 7 to 27 at% Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive film and evaluated, it was confirmed that the variation in head characteristics was reduced due to the effect of reducing the variation in electrical resistance of the shunt film.

Another effect of adding Ru is to improve the corrosion resistance of the Ta film. Temperature 90 ℃, RH95%, 200h
The increase in the Ta-2 to 35 at% Ru alloy film thickness due to the oxidation under the condition of r was 1/10 or less as compared with Ta.
This indicates that Ru has a significant effect on the corrosion resistance of Ta.

<Embodiment 8> In the same manner as in the above-mentioned embodiment, T containing 0.5 to 35 at% of Rh added to Ta is used.
The electrical resistance of the a-Rh alloy and its variation were investigated, and the amount of Rh that could be used in the shunt film was examined.
In the case of, the range of 3 to 25 at% is effective. In the case of addition of Rh as well, the resistance increased significantly at 25 at% or more (FIG. 6), and the reaction temperature with the Ni-19 at% Fe alloy film was 350 ° C. near Ta-27 at% Rh due to the increase of the added amount of Rh. It becomes the following. Therefore, 27 at% R
Ta-Rh alloys with h or more are not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C.

On the other hand, the corrosion resistance of the Ta-Rh alloy film is 3 to 25 at as in the case of the Ta-Ru alloy film.
In the range of%, there is no problem at all, and rather the addition of Rh improves the corrosion resistance of the Ta film, resulting in a very favorable result. It was confirmed that the effect of reducing the variation in the electric resistance of the shunt film by adding Rh in the range of 3 to 25 at% was about 1/3 to 1/2 as compared with the Ta film, as in the case of adding Ti and Zr. ..

Although the resistance change is small when Rh is added at 3 at% or less, the effect of reducing the variation is not so large, so the addition of Rh at 3 at% or more is effective. After the above-mentioned examination, Ta-3 to 25 were prepared as in the case of adding Ti and Zr.
An at% Rh alloy film is used as a shunt film, and as a magnetoresistive film, Ni-19 at% Fe, Ni-50 at% Co, N is used.
As a result of manufacturing the magnetoresistive head using i-10 at% Fe-9 at% Co, the variation in the bias magnetic field strength of the head due to the variation in the electric resistance of the shunt film is compared by the vertical asymmetry of the waveform of the head output. , And Ta films were reduced from ⅓ to ½ or less.

A similar study was conducted on N containing 7 to 27 at% Fe.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive film and evaluated, it was confirmed that the variation in head characteristics was reduced due to the effect of reducing the variation in electrical resistance of the shunt film. Another effect of adding Rh is to improve the corrosion resistance of the Nb film. The increase in the Nb film thickness due to the oxidation under the conditions of temperature 90 ° C., RH 95%, and 200 hours was 1/10 or less as compared with Nb. This indicates that Rh has a significant effect on the corrosion resistance of Nb.

<Embodiment 9> N added with Nb in an amount of 0.5 to 35 at% by the same method as in the above embodiment.
The electrical resistance of the b-Re alloy and its variation were investigated, and the amount of Re added that could be used in the shunt film was examined.
In the case of, the range of 3 to 20 at% is effective. In the case of Re addition as well, the resistance increased significantly when the content was 20 at% or more (FIG. 6), and the reaction temperature with the Ni-19 at% Fe alloy film was 350 ° C. in the vicinity of Nb-22 at% Rh due to the increase in the addition amount of Re. It becomes the following. Therefore, 22 at% R
The Nb-Re alloy of e or more is not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C. On the other hand, the corrosion resistance of the Nb-Re alloy film is not particularly serious in the range of 3 to 20 at%, but rather the addition of Re slightly improves the corrosion resistance of the Nb film.

Regarding the effect of reducing the variation in the electric resistance of the shunt film by adding Re in the range of 3 to 20 at%,
Similar to the addition of Ti and Zr, it is about 1/3 compared to the Nb film.
It was confirmed that it was about 1/2. Although the resistance change is small when Re is added at 3 at% or less, the effect of reducing the variation is not so large, so Re addition at 3 at% or more is effective.

After the above examination, as in the case of adding Ti and Zr, Nb-3 to 20 at% Re alloy film is used for the shunt film, and N containing Fe of 7 to 27 at% is used as the magnetoresistive film.
i-Fe magnetoresistive film, Ni-Co magnetoresistive film containing 30 to 50 at% Co, 3 to 18 at% Fe, and C
Ni of 3 to 15 at% and Ni-Fe-C consisting of the balance Ni
o When a head was manufactured using a magnetoresistive effect film and evaluated, it was confirmed that variation in head characteristics was reduced due to the effect of reducing variation in electric resistance of the shunt film.

<Embodiment 10> In the same manner as in the above-mentioned embodiment, the electric resistance of Ta-Pt alloy in which 0.5 to 35 at% of Pt was added to Ta and its variation were examined.
As a result of examining the amount of Pt added that can be used for the shunt film, P
In the case of t, the range of 1 to 10 at% is effective. In the case of Pt addition as well, the resistance increased significantly at 10 at% or more (FIG. 6), and the reaction temperature with the Ni-19 at% Fe alloy film was 350 ° C. or less near Ta-12 at% Pt due to the increase in the Pt addition amount. become. Therefore, 12 at% Pt
The above Ta-Re alloy is not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C.

On the other hand, regarding the corrosion resistance of the Ta-Pt alloy film, there is no particular problem in the range of 1 to 10 at%, but rather the addition of Pt slightly improves the corrosion resistance of the Ta film. Regarding the effect of reducing the variation in the electric resistance of the shunt film by adding Pt in the range of 1 to 10 at%,
Similar to i, Zr addition, etc.
It was confirmed to be 1/2. Although the change in resistance is small when Pt is added at 1 at% or less, the effect of reducing the variation is not so large, so addition of Pt at 1 at% or more is effective.

After the above examination, as in the case of adding Ti and Zr, a Ta-1 to 10 at% Pt alloy film is used for the shunt film, and 7 to 27 at% of Fe is used as a magnetoresistive film.
Ni-Fe magnetoresistive effect film containing, Co of 30 to 50 at
% Ni-Co magnetoresistive film containing 3 to 18 Fe
%, Co 3 to 15 at%, Ni-F consisting of the balance Ni
When the head was manufactured using the e-Co magnetoresistive effect film and evaluated, it was confirmed that the variation in the head characteristics was also reduced by the effect of reducing the variation in the electric resistance of the shunt film.

<Embodiment 11> In the same manner as in the above-mentioned embodiment, the electric resistance of Ta-Ni alloy in which 0.5 to 35 at% of Ni is added to Ta and its variation are examined.
As a result of examining the amount of Ni added that can be used in the shunt film, N
In the case of i, the range of 3 to 25 at% is effective. In the case of Ni addition, the resistance increases significantly at 25 at% or more (FIG. 6), but the reaction temperature with the Ni-19 at% Fe alloy film is the same as the reaction temperature of the Ta film even if the addition amount of Ni is increased. Is almost the same as Further, there is no problem in the corrosion resistance of the Ta-Ni alloy film in the range of 3 to 25 at%, and rather, the addition of Ni improves the corrosion resistance of the Ta film. Therefore, in the case of adding Ni, a significant increase in resistance at 25 at% or more determines the effective addition amount. It was confirmed that the effect of reducing the variation in electric resistance of the shunt film by adding Ni in the range of 3 to 25 at% is about 1/3 to 1/2 as compared with the Ta film, as in the case of the above-described embodiment. .. Although the resistance change is small when Ni is added at 3 at% or less, the effect of reducing the variation is not so large, and therefore the addition of Ni at 3 at% or more is effective.

After the above examination, as in the case of adding Ti and Zr, a Ta-3 to 25 at% Ni alloy film was used for the shunt film, and 7 to 27 at% of Fe was used as a magnetoresistive film.
Ni-Fe magnetoresistive effect film containing, Co of 30 to 50 at
% Ni-Co magnetoresistive film containing 3 to 18 Fe
%, Co 3 to 15 at%, Ni-F consisting of the balance Ni
When the head was manufactured using the e-Co magnetoresistive effect film and evaluated, it was confirmed that the variation in the head characteristics was also reduced by the effect of reducing the variation in the electric resistance of the shunt film.

<Embodiment 12> In the same manner as in the above-described embodiment, the electric resistance of Ta-Cr alloy in which 0.1 to 35 at% of Cr is added to Ta and its variation are examined.
As a result of examining the amount of Cr added to the shunt film, C
It was found that r was effective in a narrow range of 0.2 to 5 at%. This is due to the addition of Cr when Cr is added.
This is because the resistance of the a film increases greatly and the resistance further rapidly increases at 7 at% or more (FIG. 6).
The reaction temperature with the 9 at% Fe alloy film also shows a large decrease with respect to the addition of Cr, and as the amount of addition increases, Ta-6 at
This is because the temperature has already reached 350 ° C. or lower near% Cr. Therefore, a Ta-Cr alloy of 6 at% Cr or more is not practical as a shunt film when the maximum heat treatment temperature in the head manufacturing process exceeds 300 ° C. However, regarding the corrosion resistance of the Ta-Cr alloy film, addition of 10 at% or more causes no particular problem. The effect of reducing the variation in electric resistance of the shunt film by adding Cr in the range of 0.2 to 5 at% is about 1/3 to 1/2 as compared with the Ta film as in the case of the above-mentioned embodiment. It was confirmed. But 0.2
Although the resistance change is small when Cr is added at at% or less,
The variation reduction effect is not so great, so 0.2
It is effective to add Cr at at% or more.

After the above examination, as in the case of adding Ti and Zr, Ta-0.2 to 5 at% Cr alloy film was used for the shunt film, and Fe as the magnetoresistive film was 7 to 27 at%.
Ni-Fe magnetoresistive effect film containing, Co of 30 to 50 at
% Ni-Co magnetoresistive film containing 3 to 18 Fe
%, Co 3 to 15 at%, Ni-F consisting of the balance Ni
When the head was manufactured using the e-Co magnetoresistive effect film and evaluated, it was confirmed that the variation in the head characteristics was also reduced by the effect of reducing the variation in the electric resistance of the shunt film.

<Embodiment 13> In the same manner as in the above-mentioned embodiment, the electric resistance of Ta-Mo alloy in which Mo is added in an amount of 0.5 to 35 at% and its variation are examined.
As a result of examining the amount of Mo added that can be used in the shunt film, M
Also in the case of o, it was found that the addition within a relatively narrow range of 1 to 10 at% is effective. This is because even if Mo is added, the resistance of the Ta film is greatly increased by the addition, and the resistance rapidly increases at 12 at% or more (FIG. 6), and the corrosion resistance is Mo.
Is significantly reduced by the addition of 11a from the viewpoint of corrosion resistance.
This is because a Ta-Mo alloy of t% or more is not practical as a shunt film. However, there is no particular problem with the reaction temperature with the Ni-19 at% Fe alloy film, and the temperature is kept at 350 ° C. or higher even with relatively large addition of Mo (about 15 at%). It was confirmed that the effect of reducing the variation in electric resistance of the shunt film by adding Mo in the range of 1 to 10 at% is about 1/3 to 1/2 as compared with the Ta film as in the case of the example. Although the resistance change is small when Mo is added at 1 at% or less, the effect of reducing the variation is not so large. Therefore, addition of Mo at 1 at% or more is effective.

After the above examination, as in the case of adding Ti and Zr, a Ta-1 to 10 at% Mo alloy film was used for the shunt film, and 7 to 27 at% of Fe was used as a magnetoresistive film.
Ni-Fe magnetoresistive effect film containing, Co of 30 to 50 at
% Ni-Co magnetoresistive film containing 3 to 18 Fe
%, Co 3 to 15 at%, Ni-F consisting of the balance Ni
When the head was manufactured using the e-Co magnetoresistive effect film and evaluated, it was confirmed that the variation in the head characteristics was also reduced by the effect of reducing the variation in the electric resistance of the shunt film.

<Embodiment 14> FIG. 7 is a sectional view of a magnetoresistive head according to an embodiment of the present invention as viewed from the medium facing surface side. In the magnetoresistive effect magnetic head 1 according to the present embodiment, the shunt film 8 and the magnetoresistive effect film 6 are Ta described in the first to thirteenth embodiments.
An alloy film and a NiFe alloy film, a NiCo alloy film, or a NiFeCo alloy film were used.

A method of manufacturing the magnetoresistive effect magnetic head 1 will be described below. First, a lower magnetic shield layer 4 is laminated by 1 to 3 μm on a substrate 2 having an appropriate thickness made of a ceramic insulator such as zirconia with an insulating layer 3 such as thickened alumina for planarization interposed therebetween. After processing into a predetermined shape by photolithography and dry etching, the insulating layer 5 made of alumina for forming a gap layer is then added to 0.05 to 5%.
0.4 μm, each of them was laminated by a sputtering method. A magnetoresistive effect film 6, a magnetic domain stabilizing antiferromagnetic film 7 and a Ta alloy shunt film 8 are continuously formed on this by a vapor deposition method and a sputtering method, and a predetermined shape is formed by photolithography and dry etching. After processing, the electrode film 9 is subsequently laminated with Au, Cu, AuCu alloy, or the like by a sputtering method. Here, in order to remove the natural oxide film formed on the surface of the shunt film, it is necessary to perform light sputter etching before stacking.

After laminating the electrode film, the electrode 9 was formed by processing into a predetermined electrode shape for determining the track width by photolithography and a dry etching method or a wet etching method. Here, the film thicknesses of the magnetoresistive film 6, the magnetic domain stabilizing antiferromagnetic film 7, the Ta alloy shunt film 8 and the electrode film are 5 to 50 nm, 40 nm, 5 to 150 nm and 50 to 50 nm, respectively.
It was set to 500 nm. A FeMnRu alloy film or a FeMn alloy film was used for the magnetic domain stabilizing antiferromagnetic film 7. After forming the electrode 9 in this way, a soft magnetic bias film 10 for bias magnetic field enhancement was then laminated in a thickness of 5 to 50 nm and processed into the same shape as the magnetoresistive film by the same method. Further, an insulating layer 11 made of alumina forming the upper gap layer is laminated by a sputtering method of 0.05 to 0.4 μm, and finally the upper magnetic shield layer 12 is
˜3 μm stacked, processed into a predetermined shape, and the insulating layer 13 as a protective film was stacked to complete the manufacture of the magnetoresistive effect magnetic head 1.

However, when the magnetoresistive head is actually used, the head is stacked above or below (the head is stacked,
It is necessary to stack magnetic heads for recording (before forming) and use them in the form of a composite head.

FIG. 8 shows a sectional view of this composite head.
Further, in this embodiment shown in FIG. 7, the magnetic domain stabilizing antiferromagnetic film 7 on the magnetoresistive effect film 6 is formed on the entire surface of the magnetoresistive effect film. However, when the magnetic domain stabilizing effect is strong. It is more preferable to place and place not on the entire surface but on both sides of the magnetoresistive film except the track portion as shown in FIG.

When the signal magnetic flux from the recording medium is read by the magnetoresistive head 1, the soft magnetic bias film 10, the Ta alloy shunt film 8, the magnetic domain stabilizing antiferromagnetic film 7, and the magnetoresistive film 6 are passed through the electrode 9. A sense current is caused to flow through the laminated film made of, and a suitable bias magnetic field is applied to the magnetoresistive effect film 6. The sense current is shunted in each film in inverse proportion to the resistance, but the magnetic field generated by the current flowing in the films other than the magnetoresistive effect film is applied as a bias magnetic field, and the current magnetic field by the magnetoresistive effect film is also applied. The included magnetic field also returns to the magnetoresistive effect film 6 via the soft magnetic bias film 10 as a bias magnetic field, so that the combined magnetic field brings the magnetoresistive effect film 6 into the optimum bias state. As described above, it is necessary to adjust the sense current and the thickness of each film in consideration of the output.

In the optimum bias state, the magnetization in the magnetoresistive film makes an angle of about 45 degrees with respect to the direction of the sense current. When a signal magnetic flux enters the state in this state, the magnetic resistance changes depending on the direction of the signal magnetic flux. The angle of the magnetization of the effect film with respect to the sense current also increases or decreases from 45 degrees. Correspondingly, the resistance of the magnetoresistive film decreases or increases, so that this resistance change can be detected as a voltage change from the electrode and the signal can be read. When in such an optimum bias state, the output of the head becomes the largest, and the symmetry of the outputs having different polarities is the best. Conversely, if the optimum bias state collapses, the output decreases, the symmetry also deteriorates, the head characteristics deteriorate, and it becomes impossible to actually use the head.

When the heads are mass-produced, it is unavoidable that the bias state varies from the optimum state between the heads for a constant sense current value, but if this variation becomes large, the yield decreases. The cause of the variation is mainly the variation of the bias magnetic field due to the variation of the resistance of the shunt film, the soft magnetic bias film, and the anti-ferromagnetic film for domain stabilization. Among them, the shunt film has a low resistance, so The influence of resistance variation is the greatest.

In this embodiment, as described above, the Ta alloy shunt film having very little variation in resistance is used as the shunt film. Therefore, the head output asymmetry is different from that in the case of using the Ta shunt film. Variation is about 1/3
It was reduced to 1/2. Further, in the present embodiment, Barkhausen noise, which is known to be generated in the magnetoresistive head, can be almost completely suppressed by the action of the magnetic domain stabilizing antiferromagnetic film laminated on the magnetoresistive effect. did it.

In this embodiment, the soft magnetic bias film 10 is directly laminated on the Ta alloy shunt film 8 for bias magnetic field enhancement, but instead of this, an insulating layer may be interposed between the soft magnetic bias film 10 and the shunt film. The effect does not change, and a hard magnetic bias film may be used instead of the soft magnetic bias film. Further, if the bias is sufficient, there is no need to use a magnetic film for bias enhancement. Further, although the antiferromagnetic film 7 is continuously laminated on the magnetoresistive effect film for stabilizing the magnetic domains of the magnetoresistive effect film 6, a hard magnetic film may be used instead. However, in any case, since the Ta alloy shunt film is used, a similar head output variation reduction effect of about 1/3 to 1/2 can be obtained.

<Embodiment 15> The magnetoresistive head according to this embodiment is the same as that of the magnetoresistive head 1 of Embodiment 14 shown in FIG. The structure in which the film 7, the Ta alloy shunt film 8, the electrode film 9, and the soft magnetic bias film 10 are laminated in this order is formed into a predetermined shape by successively laminating the Ta alloy shunt film 8 and the soft magnetic bias film 10 first. After processing, the order in which the electrodes 9 are finally formed is changed. However, the other structure is exactly the same as the structure of the fourteenth embodiment, and the manufacturing method is also the same.

Also in this embodiment, the Ta alloy film and the NiFe alloy film or the NiCo alloy film or the NiFeCo alloy film described in Embodiments 1 to 13 are used as the shunt film and the magnetoresistive film. Therefore,
The operation, action, and effect of the magnetoresistive effect magnetic head according to this embodiment are exactly the same as those of the magnetoresistive effect magnetic head 1 according to the fourteenth embodiment. In the case of actually using the magnetoresistive effect magnetic head according to the present embodiment, a magnetic head for recording is stacked above or below (before the heads are stacked and formed) to form a composite head. Must be used in shape.

In this embodiment, a hard magnetic bias film may be used in place of the soft magnetic bias film, and a hard magnetic film may be used in place of the antiferromagnetic film to stabilize the magnetic domain of the magnetoresistive effect film. May be used. However, in any case, T
Since an a-alloy shunt film is used, the same about 1/3 ~
A 1/2 head output variation reduction effect can be obtained.

<Embodiment 16> The magnetoresistive effect magnetic head according to the present embodiment is the same as the magnetoresistive effect magnetic head 1 shown in FIG. The structure in which the film 7, the Ta alloy shunt film 8 and the electrode film 9 and the soft magnetic bias film 10 are laminated in this order is laminated with a magnetoresistive film 6, a magnetic domain stabilizing antiferromagnetic film 7 and processed into a predetermined shape. Then, first, the electrode 9
Is formed, and then the Ta alloy shunt film 8 and the soft magnetic bias film 10 are continuously laminated and processed into a predetermined shape. Example 1 for other structures
The structure is the same as that of No. 4, and the manufacturing method is also the same.

Also in this embodiment, the Ta alloy film and the NiFe alloy film or the NiCo alloy film or the NiFeCo alloy film described in Embodiments 1 to 13 are used as the shunt film 8 and the magnetoresistive film 6. Therefore,
The operation, action, and effect of the magnetoresistive effect magnetic head according to this embodiment are exactly the same as those of the magnetoresistive effect magnetic head 1 according to the fourteenth embodiment. In the case of actually using the magnetoresistive effect magnetic head according to the present embodiment, a magnetic head for recording is stacked above or below (before the heads are stacked and formed) to form a composite head. Must be used in shape.

Also, in this embodiment, the soft magnetic bias film is directly laminated on the Ta alloy shunt film, but the effect is not changed even if an insulating layer is interposed between the soft magnetic bias film and the shunt film instead of the direct lamination. Further, a hard magnetic bias film may be used instead of the soft magnetic bias film. Further, if the bias is sufficient, there is no need to use a magnetic film for bias enhancement. Further, a hard magnetic film may be used instead of the antiferromagnetic film for stabilizing the magnetic domains of the magnetoresistive film. However, in any of these cases, Ta
Since an alloy shunt membrane is used, the same about 1/3 to 1
A head output variation reduction effect of / 2 is obtained.

<Embodiment 17> The magnetoresistive head according to this embodiment is the same as that of Embodiment 14 shown in FIG.
In the magnetoresistive head 1 shown in FIG. 5, a magnetoresistive film 6, a magnetic domain stabilizing antiferromagnetic film 7, a Ta alloy shunt film 8 and an electrode film 9, and a soft magnetic bias film 10
First, the magnetic domain stabilizing antiferromagnetic film 7 is laminated and processed into a predetermined shape, and then the magnetoresistive film 6, the Ta alloy shunt film 8 and the soft magnetic bias film 10 are continuously formed. This is changed in the order of stacking, processing into a predetermined shape, and finally forming the electrode 9. The other structure is exactly the same as the structure of Example 14, and the manufacturing method is also the same. However, in the case of the present embodiment, a NiFe alloy film for controlling the crystal structure of the antiferromagnetic film is previously laminated by several tens of Å or more before the antiferromagnetic film 7 is laminated, and then the antiferromagnetic film is continuously laminated. Furthermore, it is necessary to continuously stack several tens of liters or more of NiFe alloy films in order to prevent oxidation of the antiferromagnetic film.

Also in this embodiment, the Ta alloy film and the NiFe alloy film or the NiCo alloy film or the NiFeCo alloy film described in Embodiments 1 to 13 are used for the shunt film and the magnetoresistive film. Therefore, the operation, action, and effect of the magnetoresistive effect magnetic head according to the present embodiment having such a structure are exactly the same as those of the magnetoresistive effect magnetic head 1 of the fourteenth and fifteenth embodiments. In addition,
In the case of actually using the magnetoresistive effect magnetic head according to the present embodiment as well, the head is laminated above or below (the head is laminated,
It is necessary to stack magnetic heads for recording (before forming) and use them in the form of a composite head.

Also, in this embodiment, the soft magnetic bias film is laminated directly on the Ta alloy shunt film, but the effect does not change even if an insulating layer is provided between the soft magnetic bias film and the shunt film instead of directly laminating as described above. Further, a hard magnetic bias film may be used instead of the soft magnetic bias film. Further, if the bias is sufficient, there is no need to use a magnetic film for bias enhancement. Further, a hard magnetic film may be used instead of the antiferromagnetic film for stabilizing the magnetic domains of the magnetoresistive film. However, in any of these cases, since the Ta alloy shunt film is used, the same about 1/3 to 1 /
A head output variation reduction effect of 2 can be obtained.

<Embodiment 18> The magnetoresistive head according to this embodiment is the same as that of the magnetoresistive head 1 of Embodiment 14 shown in FIG. The structure in which the film 7, the Ta alloy shunt film 8 and the electrode film 9 are laminated in this order is such that the Ta alloy shunt film 8 is laminated first, then the magnetoresistive film 6, the magnetic domain stabilizing antiferromagnetic film 7 and The order is changed to the electrode film 9, the other structure is the same as the structure of the fourteenth embodiment, and the manufacturing method is also the same.

Also in this embodiment, the Ta alloy film and the NiFe alloy film or the NiCo alloy film or the NiFeCo alloy film described in Embodiments 1 to 13 are used as the shunt film and the magnetoresistive film. Therefore,
The operation, action, and effect of the magnetoresistive effect magnetic head according to this embodiment are exactly the same as those of the magnetoresistive effect magnetic head 1 according to the fourteenth embodiment. In the case of actually using the magnetoresistive effect magnetic head according to the present embodiment, a magnetic head for recording is stacked above or below (before the heads are stacked and formed) to form a composite head. Must be used in shape.

<Embodiment 19> FIG. 10 is a sectional view of a magnetoresistive head according to another embodiment of the present invention as viewed from the medium facing surface side. Also in the magnetoresistive head 1 according to this embodiment, the shunt film 8 and the magnetoresistive film 6 are the Ta alloy film, the NiFe alloy film, the NiCo alloy film, or the N alloy described in Embodiments 1 to 13.
The iFeCo alloy film is used. Further, the magnetoresistive effect magnetic head 1 according to the present embodiment is the magnetoresistive effect film 6, the magnetic domain stabilizing antiferromagnetic film 7, and the Ta alloy of the magnetoresistive effect magnetic head 1 of the embodiment 14 shown in FIG. The laminated structure of the shunt film 8, the electrode film 9 and the soft magnetic bias film 10 is substantially reversed so that the soft magnetic bias film 10, the Ta alloy shunt film 8, the magnetic domain stabilizing antiferromagnetic film 7 and the magnetoresistive effect film 6 are formed. The electrode 9 is formed by laminating in order and processing into a predetermined shape, and finally laminating electrode films. The other structure is the same as that of the magnetoresistive effect magnetic head of the fourteenth embodiment.

Therefore, in the magnetic head 1, when the antiferromagnetic film 7 is stacked on the Ta alloy shunt film 8, the NiFe alloy film 14 is used as a Ta alloy shunt for several hundred Å in order to control the crystal structure of the antiferromagnetic film. It is necessary to pre-stack on the film 8. However, this is not necessary when a hard magnetic film is used for stabilizing magnetic domains instead of the antiferromagnetic film.

The magnetoresistive effect magnetic head 1 of this embodiment also has the same operations, functions and effects as the magnetoresistive effect magnetic head 1 of the fourteenth embodiment. In the case of actually using the magnetoresistive head 1 according to this embodiment, it is necessary to stack a recording magnetic head above or below the magnetoresistive head 1 and use it in the form of a composite head.

On the other hand, in this embodiment, the soft magnetic bias film 10 was formed directly under the Ta alloy shunt film 8 for the purpose of enhancing the bias magnetic field, but instead of directly laminating in this way, an insulating layer is interposed between the shunt film and the shunt film. However, the effect does not change, and a hard magnetic bias film may be used instead of the soft magnetic bias film. If the bias is sufficient,
In particular, it is not necessary to use a magnetic film for bias enhancement. However, in any case, since the Ta alloy shunt film is used, a similar head output variation reduction effect of about 1/3 to 1/2 can be obtained.

<Embodiment 20> The magnetoresistive head according to this embodiment is the same as the magnetoresistive head 1 of Embodiment 19 shown in FIG. 10, except that the Ta alloy shunt film 8 and the magnetic domain stabilizing antiferromagnetic material are used. The structure in which the film 7, the magnetoresistive film 6 and the electrode 9 are laminated in this order is such that the magnetoresistive film 6 is first laminated after the Ta alloy shunt film 8 and then the magnetic domain stabilizing antiferromagnetic film 7 is continuously laminated. Then, the electrode 9 is processed into a predetermined shape, and then the electrode 9 is formed. As a result, the NiFe alloy for controlling the crystal structure of the antiferromagnetic film between the Ta alloy shunt film 8 and the antiferromagnetic film 7 is formed. It is not necessary to stack the film 14. However, the other structure is the same as that of the nineteenth embodiment, and the manufacturing method is also the same. Also in this embodiment, the Ta alloy film, the NiFe alloy film, the NiCo alloy film or the NiFeCo alloy film described in Embodiments 1 to 13 is used as the shunt film and the magnetoresistive film.

The operation, action, and effect of the magnetoresistive effect magnetic head according to this embodiment are exactly the same as those of the magnetoresistive effect magnetic head 1 according to the nineteenth embodiment. In the case of actually using the magnetoresistive effect magnetic head according to this embodiment, it is necessary to stack a recording magnetic head above or below the magnetoresistive head to use it in the form of a composite head.

<Embodiment 21> The magnetoresistive heads shown in Embodiments 14 to 20 are first formed on a ceramic insulating substrate, and an alumina thin film is used as an insulating film on the magnetoresistive head to have a thickness of about 3 μm.
Magnetic poles, coils, electrodes, etc. necessary for forming the induction type recording head were laminated to form a recording / reproducing separated type composite head, and the reproduction characteristics were evaluated using a CoTaCr magnetic disk. .5 was obtained, and the variation in output was reduced from 1/3 to 1/5 as compared with the conventional head using Ti as the shunt film.

<Embodiment 22> A lower magnetic pole of an induction type recording head is formed on a ceramic insulating substrate, an insulating film of alumina is laminated, a magnetoresistive element is formed, and an upper magnetic pole is formed via the insulating film of alumina. As a result of evaluating the reproducing characteristics by using the recording / reproducing separated type composite head and a CoTaCr magnetic disk as the medium, an S / N of 3.5 was obtained, and the variation in the output was the head using Ti as the conventional shunt film. It was reduced from 1/3 to 1/5 compared to.

<Embodiment 23> A reproducing head in which a magnetoresistive element is formed on a magnetic ferrite substrate via an insulating film, and a soft magnetic film such as magnetic ferrite or permalloy is used as a shield via alumina of the insulating film and two reproducing heads. The output at 38 kfci is 3 when the recording / playback separation type composite head, which is a mechanically integrated recording head in which a coil is wound between ferrites, is mounted on the magnetic tape device and is driven by a constant voltage power supply.
At -4 mV, the variation was significantly reduced compared to the head output of 1-3 mV used for the conventional Ti shunt film.

Example 24 A recording / reproducing separated composite using the magnetoresistive head described in Examples 14 to 20 using the Ta alloy film of the present invention, for example, Ta-15% Ti alloy film. Mount the head on the magnetic disk device,
When the signal reproduction error rate of this magnetic disk device was compared with that of the conventional device, the error rate was improved by about two digits.

Twenty-Fifth Embodiment A recording / reproducing separated composite head using a Ta alloy film of the present invention, for example, a Ta-15% Ti alloy film, is used to reproduce a reproduction signal using the same CoTaCr-based magnetic medium. When the S / N was evaluated, the S / N was improved by about 0.3 to 0.7.

[0094]

According to the present invention, the Ta alloy film in which the second element is added to the Ta film is used as the shunt film, so that the variation in the electric resistance as the shunt film is much higher than that when the Ta film is used. Because it can be made smaller,
The variation of the bias magnetic field strength of the head due to the variation of the electric resistance of the shunt film is compared with the vertical asymmetry of the head output waveform, and it has an effect of reducing from 1/3 to 1/2 or less of the case of the Ta film. Therefore, there is an effect that it is possible to greatly improve the head characteristics caused by the vertical asymmetry of the head output waveform, particularly the S / N ratio, and greatly reduce the variation.

On the other hand, if the recording / reproducing separated composite head using the magnetoresistive effect magnetic head of the present invention is used in an actual magnetic recording apparatus, the head characteristics such as the S / N ratio are greatly improved and the head characteristics are dispersed. Since it is possible to drastically reduce the power consumption, it is not necessary to provide the power supply for energizing the element with a circuit function for reducing variations, and the load on the power supply is significantly reduced. At the same time, since the reproduction error rate of the signal during recording and reproduction is also reduced, the load on the error correction circuit is significantly reduced. Therefore, according to the present invention, a magnetic memory device having an extremely low error rate can be realized.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a relationship between a general alloy addition amount and a resistance change of an alloy.

FIG. 2 is an explanatory diagram of a reaction temperature between a magnetoresistive effect film and a Ta alloy film.

FIG. 3 is a characteristic diagram showing a relationship between variations in electric resistance of Ta films and Ta alloy films and film thicknesses.

FIG. 4 is a characteristic diagram showing the Ti addition amount dependency of the electric resistance change in the TaTi alloy.

FIG. 5 is a characteristic diagram showing the Ti addition amount dependency of the reaction temperature between the TaTi alloy and the magnetoresistive film.

FIG. 6 is a characteristic diagram showing the relationship between the specific resistance of various Ta alloys and the amount of additional elements added.

FIG. 7 is a sectional view of a magnetoresistive head according to an embodiment of the present invention on the medium facing surface side.

8 is a cross-sectional view of a recording / reproducing separation type composite head manufactured using the magnetoresistive effect magnetic head shown in FIG.

9 is a partially improved view of the magnetoresistive effect magnetic head shown in FIG. 7. FIG.

FIG. 10 is a sectional view of the magnetoresistive head according to another embodiment of the present invention on the medium facing surface side.

[Explanation of symbols]

1 ... Magnetoresistive magnetic head, 2 ... Substrate, 3, 5, 1
1, 13 ... Insulating layer, 4 ... Lower magnetic shield layer, 6 ... Magnetoresistive film, 7 ... Anti-ferromagnetic film for domain stabilization, 8 ... Ta alloy shunt film, 9 ... Electrode, 10 ... Soft magnetic bias film, 1
2 ... Upper magnetic shield layer.

Claims (35)

[Claims] 1. A structure based on a two-layer film consisting of a magnetoresistive film made of an alloy containing Ni, Fe and Co as a main component and a shunt film made of an alloy containing Ta as a main component. And a magnetoresistive effect type magnetic head. 2. The magnetoresistive film according to claim 1, wherein the magnetoresistive film is Ni.
A magnetoresistive effect magnetic head made of a -Fe alloy and having a composition between Ni-7 at% Fe and Ni-27 at% Fe. 3. The magnetoresistive film according to claim 1, wherein the magnetoresistive film is Ni.
-Co alloy, whose composition is Ni-30 at% Co
To a Ni-50 at% Co magnetic resistance effect type magnetic head. 4. The magnetoresistive film according to claim 1, wherein the magnetoresistive film is Ni.
-Fe-Co alloy, whose composition is 3-18 Fe
A magnetoresistive effect magnetic head comprising at%, Co of 3 to 15 at% and residual Ni. 5. The shunt film according to claim 1, which is Ta.
A magnetoresistive effect magnetic head in which an alloy is a solid solution. 6. A magnetoresistive head according to claim 1, wherein the shunt film is a Ta—Ti alloy and the Ti content is 1 to 25 at%. 7. The shunt film according to claim 1, wherein the shunt film is a Ta—Zr alloy, and the Zr content is 0.5 to 15 at%.
A magnetoresistive effect magnetic head. 8. The magnetoresistive head according to claim 1, wherein the shunt film is a Ta—V alloy and the V content is 3 to 20 at%. 9. The magnetoresistive head according to claim 1, wherein the shunt film is a Ta—Hf alloy and the Hf content is 1 to 25 at%. 10. The magnetoresistive head according to claim 1, wherein the shunt film is a Ta—W alloy and the W content is 0.5 to 10 at%. 11. The magnetoresistive effect magnetic head according to claim 1, wherein the shunt film is a Ta—Nb alloy and the Nb content is 3 to 25 at%. 12. The magnetoresistive head according to claim 1, wherein the shunt film is a Ta—Ru alloy and the Ru content is 2 to 35 at%. 13. A magnetoresistive effect magnetic head according to claim 1, wherein the shunt film is a Ta—Rh alloy, and the Rh content is 3 to 25 at%. 14. A magnetoresistive head according to claim 1, wherein the shunt film is a Ta—Re alloy, and the Re content is 3 to 20 at%. 15. The magnetoresistive effect magnetic head according to claim 1, wherein the shunt film is a Ta—Pt alloy, and the Pt content is 1 to 10 at%. 16. The magnetoresistive head according to claim 1, wherein the shunt film is a Ta—Ni alloy, and the Ni content is 3 to 25 at%. 17. The shunt film according to claim 1, wherein the shunt film is a Ta—Cr alloy, and the Cr content is 0.2 to 5 at%.
A magnetoresistive effect magnetic head. 18. The magnetoresistive head according to claim 1, wherein the shunt film is a Ta—Mo alloy and the Mo content is 1 to 10 at%. 19. The method according to any one of claims 1 to 18,
In addition to the basic structure of Ta alloy shunt film / magnetoresistive film, soft magnetic bias film, hard magnetic bias film, hard magnetic for stabilizing magnetic domain of magnetoresistive film, antiferromagnetic for stabilizing magnetic domain of magnetoresistive film A magnetoresistive effect magnetic head in which a film is installed in a state of being electrically joined or separated to a Ta alloy shunt film / magnetoresistive effect film. 20. In any one of claims 1 to 19,
A magnetoresistive effect magnetic head in which a two-layer film of a Ta alloy shunt film and a magnetoresistive effect film is laminated on an insulating substrate in the order of a magnetoresistive effect film and a Ta alloy shunt film. 21. In any one of claims 1 to 19,
A magnetoresistive effect magnetic head in which a two-layer film of a Ta alloy shunt film and a magnetoresistive effect film is laminated on an insulating substrate in the order of a Ta alloy shunt film and a magnetoresistive effect film. 22. In any one of claims 1 to 21,
Between the insulating substrate and the Ta alloy shunt film / magnetoresistive effect film two-layer film, soft magnetic bias film, hard magnetic bias film, magnetic domain stabilizing hard magnetism, anti-magnetic domain stabilizing anti-magnetism effect film A magnetoresistive effect magnetic head in which a ferromagnetic film is installed in a state where it is electrically joined or separated to a Ta alloy shunt film / magnetoresistive effect film. 23. In any one of claims 1 to 21,
A two-layered film of Ta alloy shunt film / magnetoresistive effect film is formed on an insulating substrate, and a soft magnetic bias film, a hard magnetic bias film, and a hard magnetic / magnetoresistive effect film for magnetic domain stabilization of the magnetoresistive effect film are formed on this film. A magnetic resistance effect type magnetic head in which the magnetic domain stabilizing antiferromagnetic film of (1) is installed in a state where it is electrically joined or separated to the Ta alloy shunt film / magnetoresistive effect film. 24. In any one of claims 1 to 23,
A soft magnetic bias film, a hard magnetic bias film formed adjacent to the Ta alloy shunt film / magnetoresistive effect film two-layer film,
A magnetoresistive effect magnetic head installed in a soft magnetic shield film including a hard magnetic layer for stabilizing the magnetic domain of the magnetoresistive film and an antiferromagnetic film for stabilizing the magnetic domain of the magnetoresistive film. 25. In any one of claims 1 to 24,
The electrode material that determines the track width of the magnetoresistive head is
A magnetoresistive magnetic head that is in electrical contact with the Ta alloy of the shunt film. 26. In any one of claims 1 to 24,
The electrode material that determines the track width of the magnetoresistive head is
A magnetoresistive head that is in electrical contact with the magnetoresistive film. 27. In any one of claims 1 to 24,
The electrode material that determines the track width of the magnetoresistive head is
A magnetoresistive effect magnetic head that is in electrical contact with both the Ta alloy of the shunt film and the magnetoresistive effect film. 28. In any one of claims 1 to 24,
The electrode material that determines the track width of the magnetoresistive head is
A magnetoresistive head that is in contact with a soft magnetic film, a hard magnetic film, or an antiferromagnetic film that is electrically joined to the magnetoresistive film. 29. A read / write magnetic head in which the magnetoresistive head according to any one of claims 1 to 28 is integrated with an inductive magnetic head for recording. 30. The read / write magnetic head according to claim 29, wherein the magnetoresistive head and the inductive magnetic head are laminated in a thin film on an insulating substrate. 31. A recording / reproducing magnetic head according to claim 29, wherein the magnetoresistive head and the induction type magnetic head are separately made and integrated by adhesion, screwing or the like. 32. A read / write magnetic head according to claim 29, wherein the magnetoresistive head is formed between magnetic poles of the induction type magnetic head. 33. A magnetic head device in which the magnetic head according to any one of claims 1 to 32 and a power supply for supplying a current to the magnetic head are constant. 34. A magnetic head device including the magnetic head according to any one of claims 1 to 32 and a signal reproducing circuit including a power supply, code conversion, and error correction. 35. The method according to any one of claims 1 to 34,
A magnetic storage device that integrates recording media such as magnetic disks and magnetic tapes.