JPH05275736A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPH05275736A
JPH05275736A JP10071092A JP10071092A JPH05275736A JP H05275736 A JPH05275736 A JP H05275736A JP 10071092 A JP10071092 A JP 10071092A JP 10071092 A JP10071092 A JP 10071092A JP H05275736 A JPH05275736 A JP H05275736A
Authority
JP
Japan
Prior art keywords
light
light receiving
lens
emitting element
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10071092A
Other languages
Japanese (ja)
Other versions
JP3116538B2 (en
Inventor
Tsuguji Tanaka
嗣治 田中
Hideaki Takiguchi
秀昭 滝口
Yuichi Hamamoto
裕一 濱本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp filed Critical Omron Corp
Priority to JP10071092A priority Critical patent/JP3116538B2/en
Publication of JPH05275736A publication Critical patent/JPH05275736A/en
Application granted granted Critical
Publication of JP3116538B2 publication Critical patent/JP3116538B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To make the title device thin without lowering the transmission efficiency of light from a light-emitting element up to a photodetector, to work a metal mold simply and to manufacture the metal mold easily and at low costs. CONSTITUTION:Composite aspherical Fresnel lenses 11, 12 whose parts 11a, 12a coincide with a light-emitting charactsristic and whose outer circumferential parts 11b, 12b coincide with a photodetection characteristic are used as a lighting lens on the front side of a light-emitting element chip 5 in a light-emitting element 1 and as a photodetection lens on the front side of a photodetection chip 9 in a photodetector 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、互いに対向して配置
された1対の発光および受光素子を有し、フォトインタ
ラプタ、フォトアイソレータあるいはフォトカプラ等に
使用される光半導体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device having a pair of light emitting and light receiving elements opposed to each other and used as a photo interrupter, a photo isolator, a photo coupler or the like.

【0002】[0002]

【従来の技術】この種の光半導体装置、たとえばフォト
インタラプタとして、従来、図4に示すものが知られて
いる。すなわち、図4において、1,2は互いに所定間
隔置いて対向配置された1対の発光および受光素子であ
る。そのうち、発光素子1は、リード片3の所定部位に
固着されて樹脂モールド4で被覆されたLED(発光ダ
イオード)チップ5と、このLEDチップ5の前面側に
配設された単一球面の投光レンズ6とからなり、また受
光素子2は、リード片7の所定部位に固着されて樹脂モ
ールド8で被覆されたフォトトランジスタチップ9と、
このフォトトランジスタチップ9の前面側に配設された
単一球面の受光レンズ10とからなる。
2. Description of the Related Art As an optical semiconductor device of this type, for example, a photo interrupter shown in FIG. 4 is conventionally known. That is, in FIG. 4, reference numerals 1 and 2 denote a pair of light emitting and light receiving elements which are arranged to face each other with a predetermined interval. Among them, the light emitting element 1 includes an LED (light emitting diode) chip 5 fixed to a predetermined portion of the lead piece 3 and covered with a resin mold 4, and a single spherical projection provided on the front side of the LED chip 5. The light receiving element 2 is composed of an optical lens 6, and the light receiving element 2 is fixed to a predetermined portion of the lead piece 7 and covered with a resin mold 8.
It comprises a single spherical light receiving lens 10 arranged on the front side of the phototransistor chip 9.

【0003】このような構成において、発光素子1にお
けるLEDチップ5からの光は投光レンズで集光されて
から、受光素子2側へ出射され、受光素子2における受
光レンズ10で取り込まれてフォトトランジスタチップ
9で受光される。
In such a configuration, the light from the LED chip 5 in the light emitting element 1 is condensed by the light projecting lens, then emitted to the light receiving element 2 side, taken in by the light receiving lens 10 in the light receiving element 2, and photo The light is received by the transistor chip 9.

【0004】[0004]

【発明が解決しようとする課題】ところで、この種の光
半導体装置では、小形・薄形化の要請があり、この要請
に応えるべく、LEDチップ5と投光レンズ6との間な
らびにフォトトランジスタ9と受光レンズ10との間の
各距離Thを小さくし、さらに上記投光および受光レン
ズ6,10の曲率半径も小さくなる傾向にある。そのた
め、投光および受光レンズ6,10を単一の球面レンズ
で構成した従来のものにおいては、受光レンズ10での
光学的ミスマッチングが生じ、光の伝達効率の低下が強
いられていた。
By the way, in this kind of optical semiconductor device, there is a demand for miniaturization and thinning, and in order to meet this demand, a space between the LED chip 5 and the light projecting lens 6 and the phototransistor 9 is required. The respective distances Th between the light receiving lens 10 and the light receiving lens 10 tend to be reduced, and the radii of curvature of the light projecting and light receiving lenses 6 and 10 also tend to be reduced. Therefore, in the conventional one in which the light projecting and light receiving lenses 6 and 10 are formed of a single spherical lens, an optical mismatch occurs in the light receiving lens 10 and the light transmission efficiency is forced to decrease.

【0005】ところで、投光レンズ6の曲率半径を一定
として、受光レンズ10の曲率半径を増大させると、図
5に示すように、インテンシティ(受光強度)はそれに
伴って増大する。このため、図6のように、受光レンズ
10の曲率半径を大きく設定することにより、光の伝達
効率を改善することができるけれども、この場合は、投
光レンズ6用と受光レンズ10用の成形寸法の違いか
ら、2面の金型が必要になり、製作費の高騰を招くこと
になる。
By the way, when the radius of curvature of the light projecting lens 6 is kept constant and the radius of curvature of the light receiving lens 10 is increased, the intensity (light receiving intensity) increases accordingly, as shown in FIG. Therefore, as shown in FIG. 6, by setting the radius of curvature of the light receiving lens 10 to be large, the light transmission efficiency can be improved, but in this case, molding for the light projecting lens 6 and the light receiving lens 10 is performed. Due to the difference in size, a two-sided mold is required, which results in a high production cost.

【0006】この発明は上記のような従来の課題を解決
するためになされたもので、光の伝達効率の低下を招く
ことなく、小型化が図れるとともに、容易、かつ安価に
製作することができる光半導体装置を提供することを目
的としている。
The present invention has been made in order to solve the above-mentioned conventional problems, and it is possible to reduce the size of the device without lowering the light transmission efficiency, and to manufacture the device easily and at low cost. An object is to provide an optical semiconductor device.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、この発明に係る光半導体装置は、発光チップの前側
に投光レンズを配置してなる発光素子と、上記発光素子
チップに対して所定間隔置いて対向配設された受光素子
チップの前側に受光レンズを配置してなる受光素子とを
備え、中央部が投光特性に合った曲率半径に設定され、
外周部が受光特性に合った曲率半径に設定された同一形
状の複合非球面フレネルレンズにより上記投光および受
光レンズをそれぞれ構成したものである。
In order to achieve the above object, an optical semiconductor device according to the present invention includes a light emitting element having a light projecting lens arranged in front of a light emitting chip and the light emitting element chip. A light-receiving element having a light-receiving lens arranged in front of a light-receiving element chip that is arranged at a predetermined interval and is opposed to the light-receiving element;
The light projecting lens and the light receiving lens are each composed of a compound aspherical Fresnel lens of the same shape whose outer peripheral portion is set to a radius of curvature suitable for the light receiving characteristic.

【0008】[0008]

【作用】この発明においては、発光素子チップからの光
は、発光側の複合非球面フレネルレンズにおける投光特
性に合った中央部で効率良く集光されて受光側の複合非
球面フレネルレンズにおける受光特性に合った外周部に
よって取り込まれるので、薄形化のために両レンズの曲
率半径を小さくした場合でも、受光側でのミスマッチン
グが生じにくく、光の伝達効率が良好に保たれる。さら
に、フレネルレンズにより、投光および受光特性を兼ね
備えたものを成形し易くなるうえ、1面の金型で対応で
きることによって安価に製作することが可能となる。
According to the present invention, the light from the light emitting element chip is efficiently collected at the central portion that matches the light projection characteristics of the compound aspherical Fresnel lens on the light emitting side and is received by the compound aspherical Fresnel lens on the light receiving side. Since the light is taken in by the outer peripheral portion that matches the characteristics, even if the radius of curvature of both lenses is made small for thinning, mismatching on the light receiving side does not easily occur, and good light transmission efficiency is maintained. Further, the Fresnel lens facilitates the molding of the one having both the light-projecting and light-receiving characteristics, and can be manufactured at a low cost because the mold having one surface can be used.

【0009】[0009]

【実施例】以下、この発明の実施例を図面にもとづいて
説明する。図1はこの発明に係る光半導体装置をフォト
インタラプタに適用した例を示す構成図であり、図4お
よび図6で示す従来のものと同一部所には、同一の符号
を付して、それらの説明を省略する。
Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a block diagram showing an example in which the optical semiconductor device according to the present invention is applied to a photo interrupter. The same parts as those of the conventional one shown in FIGS. Is omitted.

【0010】図1において、投光および受光レンズとし
て、それぞれ同一形状の複合非球面フレネルレンズ1
1,12が用いられている。すなわち、複合非球面フレ
ネルレンズ11(12)は、図2および図3に示すよう
に、中央部11a(12a)と外周部11b(12b)
とで、曲率半径が異なる2段の非球面をもつ構成であ
り、中央部11a(12a)は投光特性に合致するよう
に曲率半径が比較的小さく、外周部11b(12b)は
受光特性に合致するように曲率半径が比較的大きく設定
されている。
In FIG. 1, a compound aspherical Fresnel lens 1 having the same shape is used as a light projecting lens and a light receiving lens, respectively.
1 and 12 are used. That is, as shown in FIGS. 2 and 3, the composite aspherical Fresnel lens 11 (12) has a central portion 11a (12a) and an outer peripheral portion 11b (12b).
And, the central portion 11a (12a) has a relatively small radius of curvature so as to match the light emitting characteristics, and the outer peripheral portion 11b (12b) has a light receiving characteristic. The radius of curvature is set to be relatively large so as to match.

【0011】このような構成において、発光素子1にお
けるLEDチップ5からの光は複合非球面フレネルレン
ズ11における投光特性に合った中央部11aで集光さ
れてから受光素子2側へ照射される。受光素子2側で
は、複合非球面フレネルレンズ12の外周部12bが受
光特性に合っているので、上記照射された光は主にこの
外周部12bで効率良く取り込まれてフォトトランジス
タチップ9で受光されて、電気信号に変換される。
In such a structure, the light from the LED chip 5 of the light emitting element 1 is condensed at the central portion 11a of the composite aspherical Fresnel lens 11 which matches the light projecting characteristics, and then irradiated to the light receiving element 2 side. .. On the side of the light receiving element 2, since the outer peripheral portion 12b of the composite aspherical Fresnel lens 12 matches the light receiving characteristic, the irradiated light is mainly efficiently absorbed by the outer peripheral portion 12b and is received by the phototransistor chip 9. And converted into an electric signal.

【0012】上記発光側では複合非接触フレネルレンズ
11の曲率半径の小さい中央部11aが、また受光側で
は複合非接触フレネルレンズ12の曲率半径の大きい外
周部12bがそれぞれ役割を担っているので、フォトイ
ンタラプタの薄形化のために各レンズ11,12の曲率
半径を小さくする場合でも、光学系、とくに受光側での
ミスマッチングが生じにくくなる。このため、光の伝達
効率の低下を招くことなく、薄形・コンパクト化を達成
することができる。さらに、上記投光特性に合った中央
部11a(12a)を受光特性に合った外周部11b
(12b)をもつレンズとして、フレネルレンズを採用
したことによって、その成形が容易となり、しかも、同
一形状の複合非接触フレネルレンズ11,12を用意す
ればよいので、1面の金型を用いるだけで製作可能であ
り、製作面での低コスト化を図ることができる。
Since the central portion 11a having a small radius of curvature of the composite non-contact Fresnel lens 11 plays a role on the light emitting side and the outer peripheral portion 12b having a large radius of curvature of the composite non-contact Fresnel lens 12 plays a role on the light receiving side. Even when the radius of curvature of each of the lenses 11 and 12 is reduced in order to reduce the thickness of the photo interrupter, it is less likely that mismatch will occur in the optical system, especially on the light receiving side. For this reason, it is possible to achieve a thin and compact structure without causing a reduction in light transmission efficiency. Further, the central portion 11a (12a) suitable for the above-mentioned light emitting characteristic is provided with the outer peripheral portion 11b suitable for the light receiving characteristic.
By adopting the Fresnel lens as the lens having (12b), its molding is facilitated, and since it is sufficient to prepare the composite non-contact Fresnel lenses 11 and 12 having the same shape, it is only necessary to use the one-sided mold. It is possible to manufacture it at low cost.

【0013】なお、上記の実施例では、フャトインタラ
プタを例に説明したが、フォトカプラ等の他の光半導体
装置を適用しても、同様の効果を奏するものである。
In the above-mentioned embodiment, the description has been made by using the chatter interrupter as an example, but the same effect can be obtained even if another optical semiconductor device such as a photo coupler is applied.

【0014】[0014]

【発明の効果】以上のように、この発明によれば、発光
素子チップの前側の投光レンズならびに受光素子チップ
の前側の受光レンズを、中央部が投光特性に合った曲率
半径で、外周部が受光特性に合った曲率半径をもった同
一形状の複合非接触フレネルレンズによりそれぞれ構成
したことによって、高い光の伝達効率を維持させながら
コンパクト化を推進することができ、しかも、製作の容
易化とコストの低減化を図ることができる。
As described above, according to the present invention, the light-projecting lens on the front side of the light-emitting element chip and the light-receiving lens on the front side of the light-receiving element chip are provided with the outer periphery having a radius of curvature that matches the light-projecting characteristics. Since each part is composed of a compound non-contact Fresnel lens of the same shape with a radius of curvature that matches the light receiving characteristics, it is possible to promote compactness while maintaining high light transmission efficiency, and it is easy to manufacture. And cost reduction can be achieved.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明に係る光半導体装置を、フォトインタ
ラプタに適用した例を示す構成図である。
FIG. 1 is a configuration diagram showing an example in which an optical semiconductor device according to the present invention is applied to a photo interrupter.

【図2】同実施例のフォトインタラプタにおける発光お
よび受光素子側の複合非接触フレネルレンズの側面形状
を示す図である。
FIG. 2 is a diagram showing a side surface shape of a composite non-contact Fresnel lens on the light emitting and light receiving element side in the photo interrupter of the same example.

【図3】同複合非接触フレネルレンズの断面形状を示す
図である。
FIG. 3 is a view showing a sectional shape of the composite non-contact Fresnel lens.

【図4】従来の光半導体装置を示す構成図である。FIG. 4 is a configuration diagram showing a conventional optical semiconductor device.

【図5】受光側レンズの曲率半径とインテンシティとの
関係を示す特性図である。
FIG. 5 is a characteristic diagram showing a relationship between a radius of curvature of a light-receiving side lens and intensity.

【図6】従来の別の光半導体装置を示す構成図である。FIG. 6 is a configuration diagram showing another conventional optical semiconductor device.

【符号の説明】[Explanation of symbols]

1 発光素子 2 受光素子 5 発光素子チップ 9 受光素子チップ 11,12 複合非接触フレネルレンズ 11a,12a 中央部 11b,12b 外周部 DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Light receiving element 5 Light emitting element chip 9 Light receiving element chip 11,12 Composite non-contact Fresnel lens 11a, 12a Central part 11b, 12b Outer peripheral part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 発光素子チップの前側に投光レンズを配
置してなる発光素子と、上記発光素子チップに対して所
定間隔置いて対向配設された受光素子チップの前側に受
光レンズを配置してなる受光素子とを備え、中央部が投
光特性に合った曲率半径に設定され、外周部が受光特性
に合った曲率半径に設定された同一形状の複合非球面フ
レネルレンズにより上記投光および受光レンズをそれぞ
れ構成したことを特徴とする光半導体装置。
1. A light emitting element having a light projecting lens arranged on the front side of the light emitting element chip, and a light receiving lens arranged on the front side of a light receiving element chip facing the light emitting element chip at a predetermined interval. And a light receiving element formed of the same, the central portion is set to a radius of curvature that matches the light emitting characteristics, and the outer periphery is set to a radius of curvature that matches the light receiving characteristics. An optical semiconductor device comprising a light receiving lens.
JP10071092A 1992-03-25 1992-03-25 Optical semiconductor device Expired - Fee Related JP3116538B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10071092A JP3116538B2 (en) 1992-03-25 1992-03-25 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10071092A JP3116538B2 (en) 1992-03-25 1992-03-25 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPH05275736A true JPH05275736A (en) 1993-10-22
JP3116538B2 JP3116538B2 (en) 2000-12-11

Family

ID=14281236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10071092A Expired - Fee Related JP3116538B2 (en) 1992-03-25 1992-03-25 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JP3116538B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222758A (en) * 1995-02-17 1996-08-30 Nec Corp Reflection type photosensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262954B1 (en) 1997-09-30 2001-07-17 Kabushiki Kaisha Toshiba Optical disk apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222758A (en) * 1995-02-17 1996-08-30 Nec Corp Reflection type photosensor

Also Published As

Publication number Publication date
JP3116538B2 (en) 2000-12-11

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