JPH05275320A - Fabrication of semiconductor device - Google Patents

Abstract

PURPOSE:To provide fabrication of semiconductor device requiring no photolithographic process. CONSTITUTION:A pattern array 1, in which plasma beam generators 10 are arranged according to a pattern to be drawn on a wafer 2, is prepared and disposed oppositely to the wafer 2. Gas plasma 21 generated from a plasma beam generator 10 is employed as reaction gas 20 and a thin film 22 is written directly on the wafer 2 according to a predetermined pattern.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, in which a thin film, a deposition, or an etching is performed without using a photolithography technique which is essential in manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device such as a transistor is manufactured by repeating diffusion, deposition, and etching. In each process, a photolithography technique is applied to the device structure,
It plays an important role in determining the size.

On the other hand, there is known a maskless method of performing ion implantation, etching and deposition using a focused ion beam (FIB) in order to shorten these steps. However, in the FIB processing technique, since the processing is performed by scanning the beam on the wafer,
Although it excels in terms of "local processing", it is far behind photolithography in terms of productivity in mass production.

[0004]

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a semiconductor device, which is an alternative to photolithography and has good productivity, without scanning a beam unlike FIB.

[0005]

In order to achieve the above object, in a method of manufacturing a semiconductor device according to the present invention, a micro-energy emitting section for emitting an energy medium is arranged according to a pattern to be drawn on a wafer. A predetermined pattern is drawn on the wafer by preparing an arrayed pattern array, setting the pattern array on the wafer to be processed, and discharging the energy medium.

[0006]

[Operation and effect] As described above, by arranging many micro-energy emitting parts in a predetermined pattern and forming an array, etching, deposition, and ion implantation can be performed on a plurality of regions on a wafer at a time. FIB
It is possible to omit the photolithography process in the manufacturing process without requiring the beam scanning as described above.

Incidentally, when the pattern array is formed, the conventional photolithography technique or FIB processing technique is required. However, once the pattern array is formed, the photolithography technique is not necessary for the processing on the wafer. It is possible to achieve dramatic cost reduction and high productivity.

[0008]

The present invention will be described below with reference to the embodiments shown in the drawings. FIG. 1 is a conceptual diagram of the first embodiment of the present invention, showing an example in which a thin film deposition is directly drawn on a wafer using a plasma beam generator as a micro-energy emitting unit.

In FIG. 1, micro-plasma beam generators 10 are arranged in the pattern array 1 according to the pattern to be drawn on the surface of the wafer 2. In the pattern array 1, a plasma power source 30 is connected between the substrate 11 as a common cathode electrode and the metal thin film 12 as a common anode electrode of all the micro / plasma beam generators 10.

In each of the micro-plasma beam generators 10, a reaction gas 20 such as SiH ₄ is supplied, and the reaction gas 20 is decomposed by electric field energy from a plasma power source to form a gas plasma 21 at a position facing the wafer 2. A thin film 22 such as poly Si is selectively deposited.
The thin film 22 to be deposited can be formed into another thin film by changing the reaction gas 20.

As described above, since the energy emitting section and the reaction gas supply section are arranged on the pattern array 1,
The energy medium (plasma beam) and the deposition material (reactive gas) can be directly supplied onto the wafer 2 at the same time when the pattern is formed, and an arbitrary pattern can be directly drawn on the wafer without performing a photolithography process. You can As a result, a significant cost reduction and productivity improvement can be realized in semiconductor device manufacturing.

In the first embodiment described above, the plasma beam generator is used as the micro-energy emitting unit and the plasma beam is generated as the energy medium. However, the present invention is not limited to this. It may be configured to generate another energy medium such as a beam or a laser beam. Further, if the reaction gas is not the raw material gas for deposition but an etching gas is used, maskless etching can be collectively performed on a plurality of regions of the wafer 2.

Next, a second embodiment in which etching is performed with the assistance of laser light will be described with reference to FIG.
In the second embodiment, a surface emitting semiconductor laser 100 is used as a micro-energy emitting portion, and the pattern array 1 is configured by arranging the lasers 100 according to a pattern. When the semiconductor laser 100 irradiates the substrate 2 with the laser beam 23, the reaction gas 20 such as HBr is activated and adsorbed as ions and radicals in the laser irradiation region 24 of the substrate 2 and reacts with the substrate surface to react.
Etching selectively progresses in the laser irradiation region 24.

Also in the second embodiment, a film can be deposited by using the source gas for deposition as the reaction gas, as in the plasma beam described above. In the various embodiments described above, the size of the pattern on the wafer 2 on which the array pattern in the pattern array 1 is drawn is 1:
Although the example corresponding to 1 is shown, there is no need to do so, and it is also possible to use the property of the energy medium to enlarge or reduce. For example, in the second embodiment, if a lens is provided between the pattern array 1 and the wafer 2, the pattern can be enlarged or reduced, and the degree of freedom in manufacturing a semiconductor device can be increased. it can.

Next, formation of the micro-energy emitting portion will be described with reference to an example. A method of manufacturing an electron beam gun will be described as an example with reference to FIGS. First, FIG.
As in (a), the P ⁺ layer 51 and SiO which will be the gate in the future are formed.
_{2 The} Si substrate 50 on which the film 52 is formed in a desired pattern,
The N ⁺ -type highly-doped Si substrate 53 is bonded using a wafer direct bonding technique. Here, the P ⁺ layer 51 and Si
The pattern of the O ₂ film 52 will determine the gap between the emitter and gate of the future electron gun.

Next, as shown in FIG. 3B, the directly bonded substrate 50 is polished to adjust its film thickness. This film thickness adjustment will determine the future distance between the anode and gate. Next, as shown in FIG. 3C, in order to form an emitter, an insulating film 54 made of Si ₃ N ₄ or SiO ₂ having an opening pattern is formed, and etching is performed using an alkaline solution such as KOH. Si substrate 50, 53 is (100)
Since the main surface is used, the etching proceeds by crystal anisotropic etching as shown in FIG. At this time,
The P ⁺ layer 51 is not etched due to the concentration dependence and is left as a gate. This etching can also be performed by isotropic etching with a mixed acid of hydrofluoric acid, nitric acid, acetic acid, etc.
Similarly, the formation of the emitter section can be realized.

After that, a metal film 55 of tungsten or the like is formed on the insulating film 54 to form an anode electrode. In this way, a micro electron gun having the Si substrate 53, the gate G formed by the emic E, P ⁺ layer 51, and the anode A formed by the metal film 55 is manufactured. In this device, a focused electron beam can be obtained by setting the ratio of the anode voltage V _A and the gate voltage V _G.

Continuing from FIG. 3D, as shown in FIG. 4, a reaction gas introducing hole 56 for supplying a reaction gas between the emitter E and the gate G is formed in the Si substrate 53. The plasma gun shown in FIG. 1 can be manufactured.

As described above, if the conventional semiconductor manufacturing technology is applied to the formation of the micro-energy emitting portion and the reaction gas supply portion which form the pattern array, it is possible to easily form a fine structure with uniform dimensional accuracy. It can be manufactured. Further, the arrangement in the pattern array can be performed accurately. And once the pattern array is formed,
The photolithography process is not required at all in the semiconductor device manufacturing, and a large cost reduction can be realized.

[Brief description of drawings]

FIG. 1 is a conceptual diagram of a first embodiment of the present invention.

FIG. 2 is a conceptual diagram of a second embodiment of the present invention.

3A to 3C are cross-sectional views in the order of manufacturing steps when manufacturing an electron gun as a micro-energy emitting unit.

FIG. 4 is a diagram showing a structure of a micro plasma gun.

[Explanation of symbols]

 1 Pattern Array 2 Wafer 10 Micro Plasma Beam Generator 20 Reactive Gas 100 Semiconductor Laser

Claims (2)

[Claims] 1. A micro-energy emitting unit for emitting an energy medium prepares a pattern array arranged according to a pattern to be drawn on a wafer, and sets the pattern array on a wafer to be processed. A method of manufacturing a semiconductor device, wherein a predetermined pattern is drawn on the wafer by discharging the energy medium. 2. The method of manufacturing a semiconductor device according to claim 1, wherein a reaction gas is supplied to the surface of the wafer in association with the release of the energy medium.