JPH0527414A - Pellicle for semiconductor and production thereof - Google Patents
Pellicle for semiconductor and production thereofInfo
- Publication number
- JPH0527414A JPH0527414A JP3206587A JP20658791A JPH0527414A JP H0527414 A JPH0527414 A JP H0527414A JP 3206587 A JP3206587 A JP 3206587A JP 20658791 A JP20658791 A JP 20658791A JP H0527414 A JPH0527414 A JP H0527414A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solvent
- pellicle
- substrate
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体用ペリクル、特に
は膜中に溶媒成分を含まない、耐候性のすぐれた半導体
用ペリクルおよびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pellicle for semiconductors, and more particularly to a pellicle for semiconductors which does not contain a solvent component in the film and has excellent weather resistance, and a method for producing the pellicle.
【０００２】[0002]
【従来の技術】半導体用ペリクル膜の製造方法について
は従来からスピンナ−やナイフコ−タによる方法が知ら
れているが、特にはスピンコ−タによる方法が一般的に
行なわれている。この場合、このスピンナ−によって膜
材料を塗布するときには膜原料を適当な溶媒に溶解させ
て適宜な粘度に調製して塗布を行なうのであるが、その
溶媒が沸点の低いものであるとスピンコ−トを行なって
いる間に溶媒成分が揮発してしまって全く膜にならなか
ったり、膜の厚みや表面平滑性のよいものが得られなく
なるので、ここに使用する溶媒はある程度沸点の高いも
のとする必要がある。2. Description of the Related Art As a method of manufacturing a pellicle film for semiconductors, a method using a spinner or a knife coater has been known, but a method using a spin coater is generally used. In this case, when the film material is applied by this spinner, the film raw material is dissolved in an appropriate solvent to have an appropriate viscosity, and the application is performed. However, if the solvent has a low boiling point, the spin coating is performed. Since the solvent component volatilizes during the process and a film is not formed at all, or a film with good film thickness and surface smoothness cannot be obtained, the solvent used here should have a high boiling point to some extent. There is a need.
【０００３】[0003]
【発明が解決しようとする課題】しかし、高沸点の溶媒
を用いると、膜中に含まれる溶媒成分が室温では完全に
除去できなくなり、これが膜中に残留することになるの
で、成膜されたペリクル膜は膜の均一性や平滑性はすぐ
れたものになったとしても溶媒を含んだものとなること
から耐候性が著しく劣ったものになる。したがって、こ
のものは強力な紫外線やエキシマレ−ザ−にさらされる
ペリクル膜としては不適当なものとなるし、これはまた
リソグラフィ工程で溶媒が揮発すると高価なリソグラフ
ィ用機器をいためるということもあり得るという不利が
ある。However, when a solvent having a high boiling point is used, the solvent component contained in the film cannot be completely removed at room temperature and remains in the film, so that the film was formed. Even if the pellicle film has excellent uniformity and smoothness, the pellicle film contains a solvent, and therefore the pellicle film has significantly poor weather resistance. Therefore, this is unsuitable as a pellicle film exposed to strong ultraviolet rays and excimer lasers, and this may also damage expensive lithographic equipment when the solvent volatilizes in the lithographic process. There is a disadvantage that.
【０００４】なお、この場合でも膜中に残留した溶媒は
溶媒の沸点近くに加熱してそれを除去することは可能で
あるが、一般にこの加熱は膜の収縮や光線透過率の低下
などのように膜質に悪影響を与えることが多く、また長
時間の加熱は工程の長時間化を招くので好ましいもので
はない。したがって、このペリクル膜については如何に
耐候性のすぐれたものであっても、適当な沸点をもつ溶
媒に溶解して成膜することが困難な材質のものはスピン
コ−タで良質な膜とすることができないという欠点があ
る。Even in this case, the solvent remaining in the film can be removed by heating it near the boiling point of the solvent, but this heating generally causes shrinkage of the film and a decrease in light transmittance. In many cases, the quality of the film is adversely affected, and heating for a long time causes the process to be prolonged, which is not preferable. Therefore, even if the pellicle film has excellent weather resistance, a film of a material which is difficult to be formed by dissolving it in a solvent having an appropriate boiling point is a good quality film by a spin coater. There is a drawback that you cannot do it.
【０００５】[0005]
【課題を解決するための手段】本発明はこのような不
利、欠点を解決した半導体用ペリクルおよびその製造方
法に関するものであり、これはスピンコ−タ法によって
成膜するに当り、成膜時の雰囲気を膜材料を溶解させた
溶媒のガスを満した状態で成膜してなることを特徴とす
る半導体ペリクルの製造方法およびこの方法で作られた
半導体ペリクルに関するものである。SUMMARY OF THE INVENTION The present invention relates to a semiconductor pellicle and a method for manufacturing the same, which solves the above disadvantages and drawbacks. This method is used for forming a film by a spin coater method. The present invention relates to a method for manufacturing a semiconductor pellicle and a semiconductor pellicle manufactured by this method, which is characterized in that a film is formed in a state where an atmosphere is filled with a solvent gas in which a film material is dissolved.
【０００６】すなわち、本発明者らは適当な沸点をもつ
溶媒がないために成膜が困難である材料を用いてペリク
ル膜の成膜を行なう方法について種々検討した結果、ス
ピンコ−タによって成膜するときに、成膜雰囲気を成膜
する材料を溶解させた溶媒と同じものを満たしたものと
して成膜すると、成膜雰囲気が成膜材料を溶解させた溶
媒で満たされているので、成膜時に成膜材から溶媒が揮
発することがなくなり、したがってこの溶媒が沸点の低
いものであってもその揮発によって成膜しなかったり、
あるいは得られた膜が膜厚や表面平滑性の十分でないも
のになるということがなくなり、目的とする半導体用ペ
リクルを容易に得ることができることを見出した。That is, the inventors of the present invention have made various investigations on a method of forming a pellicle film using a material that is difficult to form because there is no solvent having an appropriate boiling point. As a result, the film is formed by a spin coater. When the film formation atmosphere is filled with the same solvent as the material for film formation, the film formation atmosphere is filled with the solvent in which the film formation material is dissolved. Sometimes the solvent does not evaporate from the film-forming material, so even if the solvent has a low boiling point, it will not form a film due to its volatilization.
It has also been found that the obtained film does not become insufficient in film thickness or surface smoothness, and the target semiconductor pellicle can be easily obtained.
【０００７】また、これによれば特に沸点の高い溶媒を
使用しなくてもよく、沸点の低い溶媒を使用することが
できるので、これを室温で完全に除去することができ、
したがって溶媒を含まず、耐候性のよいペリクルを得る
ことができることを確認して本発明を完成させた。以下
にこれをさらに詳述する。Further, according to this, it is not necessary to use a solvent having a particularly high boiling point, and since a solvent having a low boiling point can be used, this can be completely removed at room temperature,
Therefore, the present invention has been completed by confirming that it is possible to obtain a pellicle which does not contain a solvent and has good weather resistance. This will be described in more detail below.
【０００８】[0008]
【作用】本発明は低沸点溶媒を用いて成膜することので
きる半導体用ペリクルおよびその製造方法に関するもの
であり、これは成膜時の雰囲気を膜材料を溶解させた溶
媒を満したものとしてからスピンコ−ト法で成膜してな
る半導体用ペリクルおよびその製造方法に関するもので
ある。The present invention relates to a semiconductor pellicle that can be formed into a film by using a low boiling point solvent and a method for manufacturing the pellicle. It is assumed that the atmosphere at the time of film formation is filled with a solvent in which a film material is dissolved. The present invention relates to a semiconductor pellicle formed by a spin coat method and a manufacturing method thereof.
【０００９】本発明による半導体用ペリクルの製造はス
ピンコ−タ法で行なわれ、ここに使用されるスピンコ−
タ自体は従来公知のものとされるが、これは成膜するた
めのチャンバ−を密閉できるようにして、ここに膜材を
溶解させたものと同じ溶媒の蒸気を満たすようにしたも
のとされる。The semiconductor pellicle according to the present invention is manufactured by the spin coater method, and the spin coater used here is used.
Although the device itself is a conventionally known one, it is supposed that the chamber for film formation can be sealed so that the same solvent vapor as that in which the film material is dissolved is filled therein. It
【００１０】すなわち、図２は従来公知の方法によるス
ピンコ−タによるペリクル成膜装置の縦断面図を示した
ものであるが、このものはこの成膜装置を収容したチャ
ンバ−11が上方を開放したものとされており、この中に
は回転ステ−ジ12の上に石英板のような成膜用基板13を
重ねたものが収容されていて、これには成膜用基板13の
上に成膜材を溶媒に溶解した成膜材溶液を滴下するため
の滴下ノズル14が設けられており、この滴下ノズル14か
ら成膜材溶液を成膜用基板13に滴下したのち、回転ステ
−ジを 100〜1,000rpmで回転させて滴下液を基板13上に
広げたのち、フタ15を閉じてからここに窒素ガスを吹込
み、回転ステ−ジの回転数を 1,000〜5,000rpmとして溶
媒を揮発させて成膜するものである。That is, FIG. 2 shows a vertical cross-sectional view of a pellicle film forming apparatus using a spin coater according to a conventionally known method, in which a chamber 11 accommodating this film forming apparatus has its upper part opened. In this, there is housed a rotary stage 12 on which a film-forming substrate 13 such as a quartz plate is superposed, which is placed on the film-forming substrate 13. A dropping nozzle 14 for dropping a film forming material solution in which a film forming material is dissolved in a solvent is provided, and after the film forming material solution is dropped from the dropping nozzle 14 to the film forming substrate 13, the rotary stage Rotate at 100-1,000 rpm to spread the dropping liquid on the substrate 13, close the lid 15 and then blow nitrogen gas into it to volatilize the solvent by setting the rotation speed of the rotation stage to 1,000-5,000 rpm. Then, the film is formed.
【００１１】しかし、この場合にはこの作業中に溶媒が
揮発してしまうために、膜の形成ができなくなったり、
膜厚や表面平滑性が十分でないものでできるおそれがあ
るので、この溶媒としては沸点の高いものとすることが
必要とされるのであるが、この溶媒を沸点の高いものと
すると溶媒を常温で完全に除去することができないため
に溶媒が膜中に残留し、これによって膜が耐候性のわる
いものになるという不利がある。However, in this case, since the solvent is volatilized during this operation, the film cannot be formed,
It is necessary to have a high boiling point as this solvent because there is a possibility that the film thickness and surface smoothness are insufficient, but if this solvent has a high boiling point, the solvent will be at room temperature. The disadvantage is that the solvent remains in the membrane due to its inability to be completely removed, which makes the membrane less weather resistant.
【００１２】これに対し、本発明において使用されるペ
リクル成膜装置は図１に示したものであり、このものは
この成膜装置を収容したチャンバ−１が密閉され得るも
のとされており、この中には回転ステ−ジ２の上に石英
板のような成膜用基板３を重ねたものが収容されてい
て、これには成膜用基板３の上に成膜材を溶媒に溶解し
た成膜材溶液を滴下するための滴下ノズル４が設けられ
ており、この滴下ノズル４から成膜材料液を成膜用基板
３に滴下したのち、フタ５を閉めてチャンバ−内を密閉
し、排気口６から空気を抜いてからガス送入口７から窒
素ガスを送り込むと共にガス送入口８からも窒素ガスを
送入し、液貯槽９に収容されている溶媒を揮発させてこ
の溶媒をチャンバ−内に流入させる。On the other hand, the pellicle film-forming apparatus used in the present invention is the one shown in FIG. 1, and the chamber-1 containing this film-forming apparatus can be hermetically sealed. In this, there is housed a rotary stage 2 on which a film-forming substrate 3 such as a quartz plate is superposed, in which a film-forming material is dissolved in a solvent on the film-forming substrate 3. A dropping nozzle 4 for dropping the formed film forming material solution is provided. After the film forming material liquid is dropped from the dropping nozzle 4 to the film forming substrate 3, the lid 5 is closed to seal the chamber interior. , The air is exhausted from the exhaust port 6, nitrogen gas is sent from the gas inlet 7 and nitrogen gas is also sent from the gas inlet 8, and the solvent contained in the liquid storage tank 9 is volatilized and the solvent is stored in the chamber. -Inflow into.
【００１３】ついでこれについては膜材料を溶解した溶
媒でチャンバ−内が満たされていることを確認してから
回転ステ−ジ２を 100〜1,000rpmで回転させて滴下液を
基板３上に広げたのち、フタ５を開き回転ステ−ジの回
転数を 1,000〜5,000rpmにまで上昇させて溶媒を揮散さ
せれば成膜を完了させることができるのであるが、これ
によれば成膜中はチャンバ−内に膜材料を溶解した溶媒
が満たされているので膜材料から溶媒の揮発はなく、し
たがって目的とするペリクル成膜は膜厚も表面平滑性も
十分なものとして得ることができるし、この溶媒が沸点
の低いものでもよいのでこれが膜中に残存することもな
く、したがって耐候性のよいものとすることができると
いう有利性が与えられる。Then, after confirming that the inside of the chamber is filled with the solvent in which the film material is dissolved, the rotary stage 2 is rotated at 100 to 1,000 rpm to spread the dropping liquid on the substrate 3. After that, if the lid 5 is opened and the rotation speed of the rotary stage is increased to 1,000 to 5,000 rpm to evaporate the solvent, the film formation can be completed. Since the solvent in which the film material is dissolved is filled in the chamber, the solvent does not volatilize from the film material, and thus the target pellicle film formation can be obtained with sufficient film thickness and surface smoothness. Since the solvent may have a low boiling point, it does not remain in the film, and thus the weather resistance can be improved.
【００１４】なお、本発明に使用される成膜材料は公知
のものでよいが、これにはプルラン化合物、例えばシア
ノエチルプルランやポリトリメチルビニルシランなどが
例示される。これらのものは何れも500nm 以下の光をよ
く透過させるし、210 〜400nmの短波長域でも吸収端を
生じることがないので、500nm 以下の短波長域でのリソ
グラフィ−用ペリクルとして有用である。又、ｉ線(365
nm) の照射（照射強度５Ｗ／cm2 、100 時間) によって
も劣化や光線透過率の変化も少ないという特徴を持つ。
また、本発明において使用される成膜用基板としてはシ
リコンウエハ−や石英板などが例示されるが、これらは
平坦度が10μm以下で、表面粗さがRa=0.1μm以下のもの
とすることがよい。The film forming material used in the present invention may be a known one, and examples thereof include pullulan compounds such as cyanoethyl pullulan and polytrimethylvinylsilane. Each of these materials transmits light of 500 nm or less well and does not cause an absorption edge even in a short wavelength range of 210 to 400 nm, and thus is useful as a pellicle for lithography in a short wavelength range of 500 nm or less. In addition, i line (365
(nm) (irradiation intensity 5 W / cm 2 , 100 hours), it has the characteristic that deterioration and light transmittance change are small.
Examples of the film-forming substrate used in the present invention include silicon wafers and quartz plates, which have a flatness of 10 μm or less and a surface roughness R a = 0.1 μm or less. Is good.
【００１５】さらに、ここに使用される溶媒としては沸
点が80〜100 ℃であるｎ−ペンタン、イソペンタン、ｎ
−ヘキサン、イソヘキサン、ｎ−ヘプタン、イソヘプタ
ン、シクロヘキサン、ベンゼン、エチルエ−テル、トリ
クロロエチレン、メチルアルコ−ル、エチルアルコ−
ル、イソプロピルアルコ−ル、アセトン、メチルエチル
ケトン、酢酸エチルなどの低沸点のものが例示される
が、これは沸点が150℃以上であるジエチルベンゼン、
トリエチルベンゼン、灯油、ナフサ、酢酸ブチル、ジメ
チルホルムアミド、ジメチルアセトアミド、ジメチルス
ルオキシドなどの比較的沸点の高いものであってもよ
い。Further, as the solvent used here, n-pentane, isopentane, n having a boiling point of 80 to 100 ° C.
-Hexane, isohexane, n-heptane, isoheptane, cyclohexane, benzene, ethyl ether, trichloroethylene, methyl alcohol, ethyl alcohol
Low boiling point compounds such as isopropyl alcohol, acetone, methyl ethyl ketone, and ethyl acetate are exemplified, and diethyl benzene having a boiling point of 150 ° C. or higher,
It may be one having a relatively high boiling point such as triethylbenzene, kerosene, naphtha, butyl acetate, dimethylformamide, dimethylacetamide or dimethylsulfoxide.
【００１６】[0016]
【実施例】つぎに本発明の実施例、比較例をあげる。
実施例１
図１に示したスピンコ−タ−装置を使用し、このスピン
コ−タ−の回転ステ−ジの上に直径76mmφの石英基板を
設置し、これを真空チャックによってステ−ジ上に固定
した。ついでシアノエチルプルランをアセトンに溶解し
て５重量％溶液を作り、この15mlを分取し、石英基板上
に滴下ノズルを用いて滴下したのち、フタを閉めてスピ
ンコ−タ−のチャンバ−を閉じ、中の空気を窒素で置換
後、窒素ガスで貯槽中の溶媒（アセトン）を揮発させて
アセトン蒸気をチャンバ−内に導入し、雰囲気をアセト
ンが過飽和状態となるようにした。EXAMPLES Next, examples and comparative examples of the present invention will be described. Example 1 Using the spin coater apparatus shown in FIG. 1, a quartz substrate having a diameter of 76 mm was placed on the rotating stage of this spin coater and fixed on the stage by a vacuum chuck. did. Then, cyanoethyl pullulan was dissolved in acetone to make a 5 wt% solution, and 15 ml of this was taken and dropped onto a quartz substrate using a dropping nozzle, and then the lid was closed and the spin coater chamber was closed. After substituting the air with nitrogen, the solvent (acetone) in the storage tank was volatilized with nitrogen gas, and acetone vapor was introduced into the chamber to make the atmosphere supersaturated with acetone.
【００１７】つぎに石英基板を500rpmの速度で20秒間回
転して滴下液を基板上に広げ、続いて窒素ガスをパ−ジ
したのち基板の回転数を1,000rpmで20秒間回転して溶媒
を揮発させて成膜を完了させ、この石英基板を110 ℃の
クリ−ンオ−ブン中に入れて60分間加熱し、その後クリ
−ンオ−ブンから取り出してエリプソメトリ−法で膜厚
分布の測定を行ない、水中に浸漬して膜を基板から剥離
し、この膜を乾燥後、中心部分を切取りアルミニウム合
金製のフレ−ム（５cm角) にエポキシ系接着剤で貼りつ
けてからその物性を測定した。Next, the quartz substrate is rotated at a speed of 500 rpm for 20 seconds to spread the dropping liquid on the substrate, and subsequently nitrogen gas is purged, and then the substrate is rotated at 1,000 rpm for 20 seconds to remove the solvent. After volatilization to complete the film formation, the quartz substrate was placed in a 110 ° C. clean oven and heated for 60 minutes, then taken out of the clean oven and the film thickness distribution was measured by ellipsometry. The film was peeled from the substrate by immersion in water, the film was dried, the center part was cut off, and the film was attached to an aluminum alloy frame (5 cm square) with an epoxy adhesive, and its physical properties were measured. .
【００１８】この測定の結果、76mmφの石英基板上の膜
厚分布は３σ％で５％以下であり、膜中に残存する溶媒
はFT-IR による測定でアセトンによるピ−ク（1,360cm
-1)の無いことが確認された。また、このものにｉ線
（波長365nm、照射強度５W/cm2)を100 時間照射したが、
これには脱ガスは観測されず、また膜のｉ線透過率の低
下は１％未満であり、膜に着色や歪みは生じなかった。As a result of this measurement, the film thickness distribution on the quartz substrate having a diameter of 76 mm was 3 σ% and 5% or less, and the solvent remaining in the film was measured by FT-IR, and the peak by acetone (1,360 cm) was measured.
-1 ) was confirmed to be absent. Also, this product was irradiated with i-line (wavelength 365 nm, irradiation intensity 5 W / cm 2 ) for 100 hours,
No outgassing was observed in this, and the i-line transmittance of the film was less than 1%, and the film was not colored or distorted.
【００１９】比較例１−１
図２に示した従来公知のスピンコ−タ−によるペリクル
成膜装置を使用し、このスピンコ−タ−の回転ステ−ジ
の上に実施例１と同じ直径76mmφの石英基板を設置し、
これを真空チャックによってステ−ジ上に固定にした。
ついで実施例１と同じようにアセトンに溶解した５重量
％のシアノエチルプルラン15mlを滴下ノズルから石英基
板上に滴下したのち、速やかにスピンコ−タ−のチャン
バ−を閉じ、チャンバ−内の空気を窒素ガスで置換して
から石英基板を500rpmの速度で20秒間回転して液を基板
上に広げ、続いて窒素ガスをパ−ジしてから基板を1,00
0 rpm の速度で20秒間回転して溶媒（アセトン）を揮発
させたところ、成膜された膜は全体にしわや成膜されな
い部分があった。Comparative Example 1-1 A pellicle film forming apparatus using a conventionally known spin coater shown in FIG. 2 was used, and the same diameter of 76 mmφ as in Example 1 was used on the rotating stage of this spin coater. Place a quartz substrate,
This was fixed on the stage by a vacuum chuck.
Then, in the same manner as in Example 1, 15 ml of 5% by weight cyanoethyl pullulan dissolved in acetone was dropped onto the quartz substrate from a dropping nozzle, and then the spin coater chamber was immediately closed and the air in the chamber was replaced with nitrogen. After substituting with gas, rotate the quartz substrate at 500 rpm for 20 seconds to spread the liquid on the substrate, then purge the nitrogen gas and
When the solvent (acetone) was volatilized by rotating for 20 seconds at a speed of 0 rpm, the formed film had wrinkles and a part where the film was not formed.
【００２０】つぎに実施例１と同じようにこのものを11
0 ℃のクリ−ンオ−ブン中に入れて60分間加熱したのち
クリ−ンオ−ブンから取り出してエリプソメトリ−法で
その膜厚分布の測定を行ない、水中に浸漬して膜を基板
から剥離し、この膜を乾燥後、中心部分を切取ったアル
ミニウム合金製のフレ−ム（５cm角) にエポキシ系接着
剤で貼り付けてこの物性を測定したところ、この膜は全
体に厚みの不均一があった。Next, as in the first embodiment, this
Put in a 0 ° C clean oven and heat for 60 minutes, then remove from the clean oven and measure its film thickness distribution by ellipsometry method.Peel the film from the substrate by immersing it in water. After drying this film, it was attached to an aluminum alloy frame (5 cm square) with the central part cut off with an epoxy adhesive and the physical properties were measured. there were.
【００２１】なお、この膜中に残留する溶媒はＦＩ−Ｉ
Ｒによる測定ではアセトンのピ−ク(1,360cm-1) のない
ことが確認されたし、このものにｉ線（波長365nm、照射
強度５W/cm2)を100 時間照射したところ、これには脱ガ
スは観測されず、膜のｉ線透過率の低下も１％未満であ
り、膜に着色や歪みの発生はなかった。The solvent remaining in this film is FI-I.
It was confirmed by the measurement by R that there was no peak of acetone (1,360 cm -1 ), and this product was irradiated with i-line (wavelength 365 nm, irradiation intensity 5 W / cm 2 ) for 100 hours. No outgassing was observed, the i-line transmittance of the film was also reduced by less than 1%, and the film was neither colored nor distorted.
【００２２】比較例１−２
上記した比較例１−１における成膜材料溶液をシアノエ
チルプルランをジメチルホルムアミド(DMF) に溶解させ
た５重量％の溶液としたほかは比較例１−１と同様に処
理したところ、得られた膜の基板上の膜厚分布は３σ％
で５％以下であったが、膜中に残留する溶媒の濃度はFI
-IR による測定でジメチルホルムアミドの強いピ−ク
(1,670cm-1) が認められたので膜中にジメチルホルムア
ミドの残留していることが確認されたし、このものにｉ
線（波長365nm、照射強度５w/cm2)を100 時間照射したと
ころ、これには溶媒成分の脱ガスが観測され、膜のｉ線
透過率も５％低下していた。Comparative Example 1-2 Similar to Comparative Example 1-1, except that the film forming material solution in Comparative Example 1-1 described above was a 5% by weight solution of cyanoethyl pullulan dissolved in dimethylformamide (DMF). When processed, the film thickness distribution of the obtained film on the substrate is 3σ%
Was less than 5%, but the concentration of the solvent remaining in the film was FI.
-A strong peak of dimethylformamide as determined by IR.
(1,670 cm -1 ), it was confirmed that dimethylformamide remained in the film.
When a beam (wavelength 365 nm, irradiation intensity 5 w / cm 2 ) was irradiated for 100 hours, degassing of the solvent component was observed, and the i-line transmittance of the film was also reduced by 5%.
【００２３】実施例２〜４、比較例２−１〜４−２
上記した実施例１、比較例１−１、１−２において使用
した直径76mmφの石英基板を直径100mm φの石英基板と
したもの（実施例２、比較例２−１、２−２）、直径30
0mm φの石英基板としたもの（実施例３、比較例３−
１、３−２）および直径300mm φの石英基板としたもの
（実施例４、比較例４−１、４−２）について、実施例
１または比較例１−１、１−２と同様に処理したとこ
ろ、得られたペリクル膜の膜質、残留、残留溶媒および
その総合判定について表１に示したとおりの結果が得ら
れた。Examples 2 to 4 and Comparative Examples 2-1 to 4-2 The quartz substrates having a diameter of 76 mmφ used in Examples 1 and Comparative Examples 1-1 and 1-2 described above were used as quartz substrates having a diameter of 100 mmφ. Things (Example 2, Comparative Examples 2-1, 2-2), diameter 30
A quartz substrate with a diameter of 0 mm (Example 3, Comparative Example 3-
1, 3-2) and a quartz substrate having a diameter of 300 mmφ (Example 4, Comparative Examples 4-1 and 4-2) were treated in the same manner as in Example 1 or Comparative Examples 1-1 and 1-2. As a result, the results shown in Table 1 were obtained with respect to the film quality of the obtained pellicle film, the residual solvent, the residual solvent, and the overall judgment thereof.
【００２４】[0024]
【表１】 [Table 1]
【００２５】なお、この表１における膜質、総合評価を
示す記号はそれぞれ下記によるものである。
（膜厚）
○・・・全面に均一に成膜
×・・・成膜されない部分があり、歪み、しわが存在す
る
（総合評価）
○・・・半導体用ペリクル膜として好適である、
×・・・半導体用ペリクル膜として不適である。The symbols in Table 1 showing the film quality and the comprehensive evaluation are as follows. (Film thickness) ○: Film is uniformly formed on the entire surface ×: There are portions where film is not formed, and distortion and wrinkles exist (comprehensive evaluation) ○: Suitable as a pellicle film for semiconductors × ..Not suitable as a pellicle film for semiconductors.
【００２６】[0026]
【発明の効果】本発明は半導体用ペリクルおよびその製
造方法に関するものであり、これは前記したようにスピ
ンコ−タ−法による成膜において、成膜時の雰囲気を膜
材料を溶解させた溶媒のガスで満たした状態で成膜して
なる半導体用ペリクルの製造方法およびこのようにして
得られた半導体用ペリクルに関するものであるが、これ
によればスピンコ−タ−法による成膜の雰囲気が成膜材
料を溶解させた溶媒のガスが満たされたものとされてお
り、成膜時に成膜材から溶媒の揮発することがなくなる
ので、この溶媒の揮発のために成膜しなくなったり、得
られた膜の膜厚や表面平滑性で十分でなくなるという欠
点がなくなるし、この溶媒は沸点の低いものとすること
ができるので、膜体からの溶媒の除去が完全となり、し
たがって耐候性のよいペリクルを容易に得ることができ
るという有利性が与えられる。The present invention relates to a semiconductor pellicle and a method for manufacturing the pellicle. As described above, in the film formation by the spin coater method, the atmosphere at the time of film formation is a solvent in which the film material is dissolved. The present invention relates to a method for manufacturing a semiconductor pellicle formed in a state of being filled with a gas and a semiconductor pellicle thus obtained. According to this method, an atmosphere for film formation by a spin coater method is established. It is assumed that the solvent gas in which the film material is dissolved is filled, and the solvent does not evaporate from the film forming material during film formation. The disadvantage that the film thickness and surface smoothness of the film are not sufficient is eliminated, and since the solvent can have a low boiling point, the removal of the solvent from the film body is completed, and therefore the weather resistance is improved. Advantage that the have the pellicle can be easily given.
【図１】本発明で使用されるペリクル成膜装置の縦断面
図を示したものである。FIG. 1 is a vertical cross-sectional view of a pellicle film forming apparatus used in the present invention.
【図２】従来公知の方法で使用されるペリクル成膜装置
の縦断面図を示したものである。FIG. 2 is a vertical sectional view of a pellicle film forming apparatus used in a conventionally known method.
１，１１・・・チャンバ− ２，１２・・・
回転ステ−ジ
３，１３・・・成膜基板 ４，１４・・・
滴下ノズル
５，１５・・・フタ ６・・・排気口
７，８・・・窒素ガス送入口 ９・・・溶媒液
貯槽1, 11 ... Chamber-2, 12 ...
Rotation stage 3,13 ... Deposition substrate 4,14 ...
Dropping nozzles 5, 15 ... Lid 6 ... Exhaust port 7, 8 ... Nitrogen gas inlet 9 ... Solvent liquid storage tank
Claims (3)
時の雰囲気を膜材料を溶解させた溶媒のガスで満たした
状態で成膜してなることを特徴とする半導体用ペリク
ル。1. A pellicle for semiconductors, characterized in that, in the film formation by the spin coat method, the film formation atmosphere is filled with a gas of a solvent in which a film material is dissolved.
膜時の雰囲気を膜材料を溶解させた溶媒のガスを満たし
た状態で成膜してなることを特徴とする半導体用ペリク
ルの製造方法。2. A pellicle for a semiconductor, characterized in that, when forming a film by a spin coat method, the atmosphere during the film formation is filled with a gas of a solvent in which a film material is dissolved. Production method.
たガス化手段から供給する請求項２に記載した半導体用
ペリクルの製造方法。3. The method of manufacturing a pellicle for a semiconductor according to claim 2, wherein the solvent gas is supplied from a gasification means provided outside the spin coater.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3206587A JPH0527414A (en) | 1991-07-23 | 1991-07-23 | Pellicle for semiconductor and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3206587A JPH0527414A (en) | 1991-07-23 | 1991-07-23 | Pellicle for semiconductor and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0527414A true JPH0527414A (en) | 1993-02-05 |
Family
ID=16525875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3206587A Pending JPH0527414A (en) | 1991-07-23 | 1991-07-23 | Pellicle for semiconductor and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0527414A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1454945A1 (en) * | 2003-03-06 | 2004-09-08 | Nippon Shokubai Co., Ltd. | Method and apparatus for production of fluorine-containing polyimide film |
-
1991
- 1991-07-23 JP JP3206587A patent/JPH0527414A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1454945A1 (en) * | 2003-03-06 | 2004-09-08 | Nippon Shokubai Co., Ltd. | Method and apparatus for production of fluorine-containing polyimide film |
| US7364771B2 (en) | 2003-03-06 | 2008-04-29 | Nippon Shokubai Co., Ltd. | Method and apparatus for production of fluorine-containing polyimide film |
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