JPH05273764A - Resist pattern forming method - Google Patents

Abstract

PURPOSE:To provide the resist pattern forming method which is large in the latitude to the exposure and developing time at the time of forming the resist pattern of a thick film system and is excellent in the rectangular property in the sectional shape of the resist subjected to patterning. CONSTITUTION:The usable range diagram indicating the developable region obtaniable from the compounding ratio of a novolak resin-naphthoquinone diazide photosensitive agent and the concn. of an aq. alkaline soln. to be used as a developer is previously formed. The resist having the photosensitive agent ratio X and the aq. alkaline soln. having the concn. Y satisfying the following equation are selected within the range enclosed by the outer contour lines of the usable range diagram when the max. value of the compounding ratio of the photosensitive agent in the novolak resin-naphthoquinone diazide photosensitive agent of the resist compsn. is designated as Xmax, the min. value as Xmin, the max. value of the concn. of the aq. alkaline soln. to serve as the developer as Ymax, and the min. value as Ymin. Such resist and aq. alkaline soln. are used in this method. (Equation). X<=(Xmax+Xmin)/2. Y<=(Ymax+Ymin)/2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a resist pattern when a circuit is formed on a substrate such as a copper clad laminate, a copper clad flexible substrate, or an ITO glass substrate.

[0002]

2. Description of the Related Art Conventionally, in order to form a circuit on, for example, a copper-clad laminate having through-holes, a release film, which serves as a surface protective layer, is coated with a resist, which is thermocompression-bonded to a substrate to form a resist film. Construction methods have been used.
However, with the recent remarkable development of the electronic industry, finer circuit formation is desired due to the miniaturization of components and the sophistication of IC circuit integration. In principle, the resist used can also form finer circuits. Liquid resists, especially liquid positive resists, are being replaced.

[0003]

So far, this positive resist is generally considered to be for semiconductors (for forming circuits on a silicon wafer) or for PS plates, and various studies have been made on these. Used for semiconductor applications, copper-clad laminates that require more resist thickness and require higher resolution than PS plate applications, thick film type etching resists (resist film thickness) for circuit pattern formation on ITO glass substrate : 2 to 15 μm)
The above was diverted as it was.

However, it is difficult to obtain a good pattern in the formation of a fine pattern because the exposure amount and the allowable amount for the developing time are small. Further, the rectangular shape (pattern profile) of the cross-sectional shape of the patterned resist was also bad. Therefore, the present invention provides a method for forming a resist pattern which has a large tolerance for the exposure amount and the developing time when forming a resist pattern, and which is excellent in the rectangularity of the cross-sectional shape of the patterned resist. And

[0005]

As a result of intensive studies on a method for solving this problem, the inventors of the present invention have found that a liquid positive resist for thick films, particularly a resist composed of a novolac resin and naphthoquinodiazide, is used. The inventors have found that the problems can be solved by appropriately selecting the compounding ratio of the novolac resin and the naphthoquinonediazide photosensitizer and the concentration of the alkaline aqueous solution serving as the developing solution, and have completed the present invention.

Therefore, a method of forming a resist pattern according to the present invention which solves the above-mentioned problems is a method of forming a resist pattern using a positive resist composed of a novolac resin-naphthoquinonediazide photosensitizer. The usable range diagram of FIG. 1 showing the developable region obtained from the blending ratio of the naphthoquinonediazide-based photosensitizer and the concentration of the alkaline aqueous solution used as the developing solution is prepared in advance. The maximum value of the compounding ratio of the photosensitizer in the novolak resin-naphthoquinonediazide photosensitizer compounding ratio is Xmax.
, The minimum value is Xmin, the maximum value of the concentration of the alkaline aqueous solution as the developing solution is Ymax, and the minimum value is Ymin,
In the region surrounded by the outline of the usable range diagram, a resist having a photosensitizer ratio of X satisfying the following formula and an alkaline aqueous solution having a concentration of Y are selected and used. To do.

X≤ (Xmax + Xmin) / 2 Y≤ (Ymax + Ymin) / 2 A resist pattern obtained by selecting the compounding ratio of the novolac resin-naphthoquinonediazide photosensitizer satisfying this condition and the alkali concentration of the developer. Gives the optimum rectangularity (pattern profile) in the thick film resist obtained from the raw material system.

In the usable range diagram of FIG. 1, a vertical thin line 1 that divides the diagram into left and right corresponds to (Xmax + Xmin) / 2, and a horizontal thin line 2 that divides the diagram into upper and lower parts (Ymax
+ Ymin) / 2. Therefore, X and Y satisfying the above two equations are in the area A with mesh in FIG. Next, each raw material system to which this optimization is applied will be described. First, although it is a novolac resin, the novolac resin here means formaldehyde, paraformaldehyde, acetaldehyde, phenylacetaldehyde, propylaldehyde, benzaldehyde, o-chlorobenzaldehyde, m-chlorobenzaldehyde, p-chlorobenzaldehyde, p- Methylbenzaldehyde, p-ethylbenzaldehyde, p
Aldehydes such as -n-butylbenzaldehyde, α-phenylpropylaldehyde, β-phenylpropylaldehyde, crotonaldehyde, acrolein and furfural, or ketones such as acetone and ethylmethylketone, and phenol, o-cresol, m-cresol , P-cresol, 2,3-xylenol, 2,
4-xylenol, 2,5-xylenol, 3,4-xylenol, 3,5-xylenol, o-ethylphenol, m-ethylphenol, p-ethylphenol,
o-butylphenol, m-butylphenol, p-butylphenol, o-methoxyphenol, m-methoxyphenol, p-methoxyphenol, 2,3,4-
Trimethylphenol, 2,3,5-trimethylphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, hydroquinone, catechol, resorcinol, 2-methylresorcinol, pyrogallol, 5-chloropyrogallol, 5-methoxypyrogallol, 5-methylpyrogallol, 5-ethylpyrogallol, 5-butylpyrogallol, 5-octylpyrogallol, 1-naphthol, 2-naphthol, 2-methyl-1-naphthol, 3-methyl-1-naphthol, 4-
Methyl-1-naphthol, 6-methyl-1-naphthol, 7-methyl-1-naphthol, 1-methyl-2-naphthol, 1,2-dihydroxynaphthalene, 1,3-
Dihydroxynaphthalene, 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxy naphthalene,
1,2,3-trihydroxynaphthalene, 1,2,4-
A polycondensate obtained from a compound having a phenolic hydroxyl group such as trihydroxynaphthalene, 1,4,5-trihydroxynaphthalene, and 1,6,7-trihydroxynaphthalene. For example, aldehydes and ketones are formaldehyde, paraformaldehyde, and acetone, and compounds having a phenolic hydroxyl group are phenol,
Examples thereof include o-cresol, m-cresol, p-cresol, and pyrogallol. Preferred examples of combination include at least one of formaldehyde, paraformaldehyde, acetaldehyde, and benzaldehyde, and phenol, o-cresol, m-cresol, and p-.
A combination of at least one of cresols, or
A combination of acetone and pyrogallol can be mentioned.

Next, regarding naphthoquinonediazide type photosensitizers, 1,2-naphthoquinonediazide-4-sulfonic acid and 1,2-naphthoquinonediazide- are used as photosensitive components.
5-sulfonic acid, 1,2-naphthoquinonediazide-4-
The naphthoquinonediazides such as carboxylic acid and 1,2-naphthoquinonediazide-5-carboxylic acid and the ballast compound include 2,4-dihydroxybenzophenone, 4,
4'-dihydroxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2'3,4,4'-pentahydroxybenzophenone, 2,3,3 ', 4,4', 5'-hexahydroxybenzophenone, 2-hydroxy-3,4
There are esterification products with polyhydroxy benzophenones such as diacetoxybenzophenone and 2,3,4-trihydroxyacetophenone, and polyhydroxyacetophenones. Of these, preferred examples include trihydroxybenzophenones such as 2,3,4-trihydroxybenzophenone as a ballast compound and naphthoquinonediazide such as 1,2-naphthoquinonediazide-5-sulfonic acid. An esterification product with sulfonic acids and an ester substitution amount of 1.0 to 3.0
The thing of is preferable.

In order to obtain a resist, the substrate is usually coated by some method, but the method and the resist properties are not particularly limited, but it is preferably liquid. There is no limitation to impart appropriate physical properties to the resist for coating on the substrate. Additives added for that purpose, such as surfactants, thickeners,
There is no limitation on the addition of liquid property modifiers such as thixotropic agents, adhesion enhancers, colorants, and color formers.

Any developer may be used as long as it is usually used, but examples thereof include sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium borate, potassium borate, sodium carbonate, potassium carbonate and silicic acid. Sodium, potassium silicate, sodium metasilicate, potassium metasilicate, sodium phosphate dibasic, ammonium phosphate dibasic, sodium phosphate tribasic, ammonium phosphate tribasic,
Aqueous solution of inorganic alkali such as aqueous ammonia, aqueous solution of amines such as ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine,
Examples thereof include alcohol amines such as triethanolamine and diethylhydroxyamine, and aqueous solutions of quaternary ammonium salts such as tetramethylammonium hydroxide and trimethyl-2-hydroxyethylammonium hydroxide.

Next, how to obtain the usable range diagram shown in FIG. 1 will be described. Using the above-mentioned raw materials, resists in which the compounding ratio of the novolac resin-naphthoquinonediazide photosensitizer is variously prepared are prepared, and each resist is applied to the substrate. The substrate at this time is not limited, but it is preferable to use a substrate on which a resist pattern is actually formed, from the viewpoint that a desired combination of the desired resist composition and developer concentration can be obtained. Ultraviolet rays are applied to a part of the resist coated on the substrate in this manner. Preferably,
Ultraviolet irradiation is performed by an apparatus that actually forms a pattern, and development is performed with a developing solution adjusted to various concentrations. Then, the solubility of the exposed portion and the unexposed portion is evaluated. The developable conditions obtained from the results are plotted on a graph in which the compounding ratio of the novolac resin-naphthoquinonediazide photosensitizer is plotted on the X axis and the concentration of the alkaline aqueous solution used as the developer is plotted on the Y axis. Fig. 1 showing various areas
You can get the usable range map of. The index of the alkali concentration at this time may be hydrogen ion concentration, weight percentage, mole percentage, regulation concentration, etc., but since the respective values are in a substantially proportional relationship in the range normally used as a developer,
It doesn't matter what index is used.

To further explain this usable range diagram, the outline showing the upper limit in the Y-axis direction shows the upper limit of the alkali concentration of the developer in which the resist unexposed portion is not affected by the developer. In the above-mentioned alkaline concentration range of the developing solution, even the unexposed portion of the resist is attacked by the developing solution. The outer line indicating the lower limit in the Y-axis direction indicates the minimum developer alkali concentration at which the resist-exposed portion can be dissolved in the developer from a practical point of view. In the alkaline concentration range of the developing solution below this range, the exposed area of the resist is not affected by the developing solution. On the other hand, the contour line indicating the upper limit in the X-axis direction indicates the maximum amount of the photosensitizer that can be completely exposed in the resist film thickness required for practical use. The photosensitizer after the complete exposure remains, and undissolved parts also occur in the resist exposed areas. The contour line indicating the lower limit in the X-axis direction indicates the minimum amount of the photosensitizer required to maintain the dissolution suppressing force of the base resin required for the unexposed photosensitizer. That is, if the amount of the photosensitizer is less than the above range, the amount of the photosensitizer is too small to exert the ability to suppress the dissolution of the base resin even in the unexposed state.

In this usable range diagram, the maximum value of the compounding ratio of the photosensitizer in the novolac resin-naphthoquinonediazide photosensitive compound ratio is Xmax, and the minimum value is X.
where min is the maximum concentration of the alkaline aqueous solution is Ymax and the minimum is Ymin, the region A to which X and Y satisfying the following formula belong within the range surrounded by the outline of the usable range diagram Ask for.

X ≦ (Xmax + Xmin) / 2 Y ≦ (Ymax + Ymin) / 2 And a novolac resin satisfying the range of the area A--
By selecting the blending ratio of the naphthoquinonediazide-based photosensitizer and the alkali concentration of the developing solution, the usual resist pattern formation is performed. It should be noted that the amount of the photosensitizer blended may be selected so as to satisfy the above conditions, but considering that the solubility in a solvent or the sensitivity tends to decrease as the amount increases, the upper limit of the amount of the photosensitizer blended Is preferably 40% by weight based on the total solid content.

[0016]

When the resist pattern is formed by the method of the present invention, the obtained resist pattern gives the optimum pattern profile (rectangularity) in the thick film resist system obtained from the raw material system, and the pattern under that condition is obtained. The formation has a large tolerance with respect to the exposure amount and the developing time.

[0017]

EXAMPLES Examples of the present invention will be described below, but the present invention is not limited by these examples. -Example 1-A cresol-based novolac resin (PR-51767 manufactured by Sumitomo Bakelite Co., Ltd.) as a novolac-based resin, 1,2-naphthoquinonediazide-5-sulfonic acid and 2,3,4-trihydroxybenzophenone as a naphthoquinonediazide-based photosensitizer Esterified product (NT- manufactured by Toyo Gosei Co., Ltd.
154), and an aqueous solution of sodium metasilicate (Na ₂ SiO ₃ / 9H ₂ O) was selected as a developing solution to obtain a usable range diagram of FIG. In this usable range diagram, pattern formation was performed under the conditions within the region A ₁ that satisfies the above two equations, that is, under the conditions shown in Table 2 using the positive type liquid resist (1) with the compounding ratio shown in Table 1. I went to
As shown in Table 2, a resist circuit pattern having a good resist pattern shape and good pattern accuracy was obtained. The film forming conditions are as follows: the composition is a 30% by weight solution of ethylene glycol monoethyl ether acetate applied on a copper clad laminate with a spinner and dried at 85 ° C. for 15 minutes to form a resist film having a film thickness of 7 μm. It was something to say.
The film forming conditions are the same in the following examples and comparative examples.

-Example 2-A cresol-based novolac resin (PR-51767 manufactured by Sumitomo Bakelite Co., Ltd.) as a novolac-based resin, 1,2-naphthoquinonediazide-5-sulfonic acid and 2,3,4- as a naphthoquinonediazide-based photosensitizer Esterified product of trihydroxybenzophenone (NT- manufactured by Toyo Gosei Co., Ltd.
300), and an aqueous solution of sodium metasilicate (Na ₂ SiO ₃ / 9H ₂ O) was selected as a developing solution to obtain a usable range diagram of FIG. In this usable range diagram, pattern formation is performed under the conditions within the region A ₂ that satisfies the above two expressions, that is, under the conditions shown in Table 2 using the positive type liquid resist (2) having the compounding ratio shown in Table 1. I went to
As shown in Table 2, a resist circuit pattern having a good resist pattern shape and good pattern accuracy was obtained.

-Example 3-A cresol-based novolac resin (RESIN-XL manufactured by Mitsubishi Petrochemical Co., Ltd.) as a novolac-based resin and 1,2-naphthoquinonediazide-5 as a naphthoquinonediazide-based photosensitizer.
-Esterification product of sulfonic acid and 2,3,4-trihydroxybenzophenone (NT-154 manufactured by Toyo Gosei Co., Ltd.)
And select sodium metasilicate (N
a ₂ SiO ₃ / 9H ₂ O) aqueous solution was selected, and the usable range diagram of FIG. 3 was obtained. In this usable range diagram, a positive type liquid resist (3) having a compounding ratio shown in Table 1 was used under the condition that it is within a region A ₃ that satisfies the above two expressions.
When a pattern was formed under the conditions shown in Table 2, a resist circuit pattern having a good resist pattern shape and good pattern accuracy was obtained as shown in Table 2.

-Example 4- In order to evaluate the magnitude of the permissible dose for overexposure, the positive type liquid resist (1) used in Example 1 was used to determine the optimum exposure dose required in Example 1. When the pattern accuracy was evaluated by exposure with a double exposure amount, the goodness of the resist pattern shape was also maintained, and as shown in Table 2, the pattern accuracy was also sufficiently maintained.

Example 5 In order to evaluate the magnitude of the permissible amount for overdevelopment, the positive liquid resist (1) used in Example 1 was used, and the development time was doubled in Example 1. When the development was carried out for the development time of, and the pattern accuracy was evaluated, the goodness of the resist pattern shape was maintained, and as shown in Table 2,
The pattern accuracy was also kept sufficiently.

Comparative Example 1 A pattern was formed under the conditions belonging to the region B ₂ in FIG. 2, that is, using the positive type liquid resist (4) having the compounding ratio shown in Table 1 under the conditions shown in Table 2. As shown in Table 2, the resist pattern shape was poor as compared with Example 1, and sufficient pattern accuracy could not be obtained.

[0023] - under the conditions belonging to the area B ₂ of Comparative Example 2 FIG. 2, i.e., when a pattern was formed under the conditions shown in Table 2 using a positive type liquid resist proportions shown in Table 1 (5) As shown in Table 2, the resist pattern shape was poor as compared with Example 1, and sufficient pattern accuracy could not be obtained.

[0024] - under the conditions belonging to the area B ₃ Comparative Example 3 2, that is, when a pattern was formed under the conditions shown in Table 2 using a positive type liquid resist proportions shown in Table 1 (6) As shown in Table 2, the resist pattern shape was poor as compared with Example 1, and sufficient pattern accuracy could not be obtained.

-Comparative Example 4-Using the same resist and developing solution as in Comparative Example 1 and exposing at an exposure amount twice as much as the required optimum exposure amount in Comparative Example 1, the pattern accuracy was evaluated. As shown, the resist pattern shape was worse than in Comparative Example 1 (becomes oval), and sufficient pattern accuracy was not obtained.

-Comparative Example 5-Using the same resist and developing solution as in Comparative Example 1, development was performed at a developing time twice as long as that in Comparative Example 1, and the pattern accuracy was evaluated. As shown in Table 2. In addition, the resist pattern shape was further deteriorated (becomes oval) as compared with Comparative Example 1, and sufficient pattern accuracy could not be obtained.

[0027]

[Table 1]

[0028]

[Table 2]

[0029]

According to the method of the present invention, a liquid positive resist for thick films, that is, a resist containing novolac resin and naphthoquinone diazide, which has not been studied in the past, is used in a resist containing novolac resin and naphthoquinone diazide. The relationship between the compounding ratio of the agent and the proper range of the concentration of the alkaline aqueous solution as the developing solution is clarified. By performing pattern formation within this proper range, (1) in the resist pattern obtained as a result of the development, the sagging on the resist upper part is performed. And the pattern accuracy (rectangularity) is improved, and (2) overexposure and the tolerance for an increase in development time are increased. As a result, a finer and higher-precision resist image is obtained. Therefore, high precision fine circuit formation becomes more useful.

[Brief description of drawings]

FIG. 1 is a usable range diagram used for carrying out a resist pattern forming method according to the present invention.

FIG. 2 is a usable range diagram of a positive type liquid resist used in Example 1 and Comparative Examples 1 to 5.

FIG. 3 is a usable range diagram of a positive type liquid resist used in Example 2.

FIG. 4 is a usable range diagram of a positive type liquid resist used in Example 3

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] June 25, 1992

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0012

[Correction method] Change

[Correction content]

Next, how to obtain the usable range diagram shown in FIG. 1 will be described. Using the above-mentioned raw materials, resists in which the compounding ratio of the novolac resin-naphthoquinonediazide photosensitizer is variously prepared are prepared, and each resist is applied to the substrate. The substrate at this time is not limited, but it is preferable to use a substrate on which a resist pattern is actually formed, from the viewpoint that a desired combination of the desired resist composition and developer concentration can be obtained. Ultraviolet rays are applied to a part of the resist coated on the substrate in this manner. Preferably,
Ultraviolet irradiation is performed by an apparatus that actually forms a pattern, and development is performed with a developing solution adjusted to various concentrations. Then, the solubility of the exposed portion and the unexposed portion is evaluated. The developable conditions obtained from the results are plotted on a graph in which the compounding ratio of the novolac resin-naphthoquinonediazide photosensitizer is plotted on the X axis and the concentration of the alkaline aqueous solution used as the developer is plotted on the Y axis. Fig. 1 showing various areas
You can get the usable range map of. The index of the alkali concentration at this time may be hydrogen ion concentration, weight percentage, mole percentage, specified concentration, etc., but since the respective values are in a substantially proportional relationship in the range normally used as a developer,
It doesn't matter what index is used.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0017

[Correction method] Change

[Correction content]

[0017]

EXAMPLES Examples of the present invention will be described below, but the present invention is not limited by these examples. -Example 1-A cresol-based novolac resin (PR-51767 manufactured by Sumitomo Bakelite Co., Ltd.) as a novolac-based resin, 1,2-naphthoquinonediazide-5-sulfonic acid and 2,3,4-trihydroxybenzophenone as a naphthoquinonediazide-based photosensitizer Esterified product (NT- manufactured by Toyo Gosei Co., Ltd.
154) and an aqueous solution of sodium metasilicate ( Na ₂ SiO ₃ .9H ₂ O ) was selected as the developing solution to obtain the usable range diagram of FIG. In this usable range diagram, pattern formation is performed under the conditions within the region A ₁ that satisfies the above two formulas, that is, under the conditions shown in Table 2 using the positive type liquid resist (I) with the compounding ratio shown in Table 1. I went to
As shown in Table 2, a resist circuit pattern having a good resist pattern shape and good pattern accuracy was obtained. The film-forming conditions were as follows: the composition was applied as a 30 wt% solution of ethylene glycol monoethyl ether acetate on a copper-clad laminate with a spinner and dried at 85 ° C. for 15 minutes to form a resist film with a thickness of 7 μm. It was something to say.
The film forming conditions are the same in the following examples and comparative examples.

[Procedure 3]

[Document name to be amended] Statement

[Correction target item name] 0018

[Correction method] Change

[Correction content]

-Example 2-A cresol-based novolac resin (PR-51767 manufactured by Sumitomo Bakelite Co., Ltd.) as a novolac-based resin, 1,2-naphthoquinonediazide-5-sulfonic acid and 2,3,4- as a naphthoquinonediazide-based photosensitizer Esterified product of trihydroxybenzophenone (NT- manufactured by Toyo Gosei Co., Ltd.
300), and an aqueous solution of sodium metasilicate ( Na ₂ SiO ₃ .9H ₂ O ) was selected as a developing solution to obtain a usable range diagram of FIG. In this usable range diagram, pattern formation is performed under the condition that the region A ₂ satisfies the above two expressions, that is, under the condition shown in Table 2 using the positive type liquid resist (2) having the compounding ratio shown in Table 1. I went to
As shown in Table 2, a resist circuit pattern having a good resist pattern shape and good pattern accuracy was obtained.

[Procedure amendment 4]

[Document name to be amended] Statement

[Name of item to be corrected] 0019

[Correction method] Change

[Correction content]

-Example 3-A cresol-based novolac resin (RESIN-XL manufactured by Mitsubishi Petrochemical Co., Ltd.) as a novolac-based resin and 1,2-naphthoquinonediazide-5 as a naphthoquinonediazide-based photosensitizer.
-Esterification product of sulfonic acid and 2,3,4-trihydroxybenzophenone (NT-154 manufactured by Toyo Gosei Co., Ltd.)
And select sodium metasilicate ( N
a ₂ SiO ₃ -9H ₂ O ) aqueous solution was selected to obtain the usable range diagram of FIG. In this usable range diagram, the condition is within the region A ₃ that satisfies the above two expressions, that is, the positive liquid resist (3) having the compounding ratio shown in Table 1 is used.
When a pattern was formed under the conditions shown in Table 2, a resist circuit pattern having a good resist pattern shape and good pattern accuracy was obtained as shown in Table 2.

[Procedure Amendment 5]

[Document name to be amended] Statement

[Name of item to be corrected] 0025

[Correction method] Change

[Correction content]

-Comparative Example 4-Using the same resist and developing solution as in Comparative Example 1 and exposing at an exposure amount twice as much as the required optimum exposure amount in Comparative Example 1, the pattern accuracy was evaluated. shown manner, the resist pattern shape is further worsened than Comparative example 1 (kamaboko
Becomes Jo), sufficient pattern accuracy can not be obtained.

[Procedure Amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction content]

-Comparative Example 5-Using the same resist and developing solution as in Comparative Example 1, development was performed at a developing time twice as long as that in Comparative Example 1, and the pattern accuracy was evaluated. As shown in Table 2. In addition, the shape of the resist pattern was worse than that of Comparative Example 1 (becomes a lump shape), and sufficient pattern accuracy could not be obtained.

Claims (2)

[Claims] 1. A method of forming a resist pattern using a positive resist comprising a novolac resin-naphthoquinonediazide photosensitizer, wherein the compounding ratio of the novolac resin-naphthoquinonediazide photosensitizer and the alkaline aqueous solution used as a developing solution are used. A usable range diagram showing the developable region obtained from the concentration is prepared in advance, and in this usable range diagram, the maximum of the compounding ratio of the photosensitizer in the novolac resin-naphthoquinonediazide photosensitive compound compounding ratio of the resist composition is shown. When the value is Xmax, the minimum value is Xmin, the maximum value of the concentration of the alkaline aqueous solution as the developing solution is Ymax, and the minimum value is Ymin, the following formula is given in the area surrounded by the outline of the usable range diagram. Select a resist with a ratio of a photosensitive agent that satisfies X and an aqueous alkaline solution with a concentration of Y, and use these. A resist pattern forming method comprising and. X≤ (Xmax + Xmin) / 2 Y≤ (Ymax + Ymin) / 2 2. The method for forming a resist pattern according to claim 1, wherein the upper limit of the compounding ratio of the naphthoquinonediazide-based photosensitizer is 40% by weight based on the total solid content of the resist.