JPH052711B2 - - Google Patents
Info
- Publication number
- JPH052711B2 JPH052711B2 JP2527383A JP2527383A JPH052711B2 JP H052711 B2 JPH052711 B2 JP H052711B2 JP 2527383 A JP2527383 A JP 2527383A JP 2527383 A JP2527383 A JP 2527383A JP H052711 B2 JPH052711 B2 JP H052711B2
- Authority
- JP
- Japan
- Prior art keywords
- indium
- transparent conductive
- organic
- tin
- ink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 9
- 150000002894 organic compounds Chemical class 0.000 claims description 9
- 239000004480 active ingredient Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 30
- 239000000976 ink Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 239000011521 glass Substances 0.000 description 12
- -1 organic acid antimony salts Chemical class 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 10
- 150000003606 tin compounds Chemical class 0.000 description 7
- 150000002472 indium compounds Chemical class 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- WWZKQHOCKIZLMA-UHFFFAOYSA-M octanoate Chemical compound CCCCCCCC([O-])=O WWZKQHOCKIZLMA-UHFFFAOYSA-M 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 150000001463 antimony compounds Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- ZREIPSZUJIFJNP-UHFFFAOYSA-K bismuth subsalicylate Chemical compound C1=CC=C2O[Bi](O)OC(=O)C2=C1 ZREIPSZUJIFJNP-UHFFFAOYSA-K 0.000 description 2
- 229960000782 bismuth subsalicylate Drugs 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000000881 depressing effect Effects 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 150000007524 organic acids Chemical group 0.000 description 2
- 150000007519 polyprotic acids Polymers 0.000 description 2
- OUULRIDHGPHMNQ-UHFFFAOYSA-N stibane Chemical compound [SbH3] OUULRIDHGPHMNQ-UHFFFAOYSA-N 0.000 description 2
- 229910000067 stibane Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- HVYVMSPIJIWUNA-UHFFFAOYSA-N triphenylstibine Chemical compound C1=CC=CC=C1[Sb](C=1C=CC=CC=1)C1=CC=CC=C1 HVYVMSPIJIWUNA-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- OAHAQNQHAKJAPK-UHFFFAOYSA-J C(C(=C)CC(=O)[O-])(=O)[O-].[Sn+4].C(C(=C)CC(=O)[O-])(=O)[O-] Chemical compound C(C(=C)CC(=O)[O-])(=O)[O-].[Sn+4].C(C(=C)CC(=O)[O-])(=O)[O-] OAHAQNQHAKJAPK-UHFFFAOYSA-J 0.000 description 1
- AJDTZVRPEPFODZ-UHFFFAOYSA-J C(C=CC(=O)[O-])(=O)[O-].[Sn+4].C(C=CC(=O)[O-])(=O)[O-] Chemical compound C(C=CC(=O)[O-])(=O)[O-].[Sn+4].C(C=CC(=O)[O-])(=O)[O-] AJDTZVRPEPFODZ-UHFFFAOYSA-J 0.000 description 1
- SFXCZIKWLKDENS-UHFFFAOYSA-H C(CCCCC(=O)[O-])(=O)[O-].[In+3].C(CCCCC(=O)[O-])(=O)[O-].C(CCCCC(=O)[O-])(=O)[O-].[In+3] Chemical compound C(CCCCC(=O)[O-])(=O)[O-].[In+3].C(CCCCC(=O)[O-])(=O)[O-].C(CCCCC(=O)[O-])(=O)[O-].[In+3] SFXCZIKWLKDENS-UHFFFAOYSA-H 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- AJDTZVRPEPFODZ-PAMPIZDHSA-J [Sn+4].[O-]C(=O)\C=C/C([O-])=O.[O-]C(=O)\C=C/C([O-])=O Chemical compound [Sn+4].[O-]C(=O)\C=C/C([O-])=O.[O-]C(=O)\C=C/C([O-])=O AJDTZVRPEPFODZ-PAMPIZDHSA-J 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001462 antimony Chemical class 0.000 description 1
- 150000001495 arsenic compounds Chemical class 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ISIWESOCSUDPQO-UHFFFAOYSA-H bis(4,6-dioxo-1,3,2-dioxaindiginan-2-yl) propanedioate Chemical compound [In+3].C(CC(=O)[O-])(=O)[O-].C(CC(=O)[O-])(=O)[O-].C(CC(=O)[O-])(=O)[O-].[In+3] ISIWESOCSUDPQO-UHFFFAOYSA-H 0.000 description 1
- WXZVPVPFZSPZRV-UHFFFAOYSA-H bis(4,7-dioxo-1,3,2-dioxaindigepan-2-yl) butanedioate Chemical compound C(CCC(=O)[O-])(=O)[O-].[In+3].C(CCC(=O)[O-])(=O)[O-].C(CCC(=O)[O-])(=O)[O-].[In+3] WXZVPVPFZSPZRV-UHFFFAOYSA-H 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- JAONZGLTYYUPCT-UHFFFAOYSA-K bismuth subgallate Chemical compound OC(=O)C1=CC(O)=C2O[Bi](O)OC2=C1 JAONZGLTYYUPCT-UHFFFAOYSA-K 0.000 description 1
- 229960000199 bismuth subgallate Drugs 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229940093920 gynecological arsenic compound Drugs 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000007602 hot air drying Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 125000001880 stiboryl group Chemical group *[Sb](*)(*)=O 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- PIILXFBHQILWPS-UHFFFAOYSA-N tributyltin Chemical compound CCCC[Sn](CCCC)CCCC PIILXFBHQILWPS-UHFFFAOYSA-N 0.000 description 1
- CPRPKIMXLHBUGA-UHFFFAOYSA-N triethyltin Chemical compound CC[Sn](CC)CC CPRPKIMXLHBUGA-UHFFFAOYSA-N 0.000 description 1
- BPLUKJNHPBNVQL-UHFFFAOYSA-N triphenylarsine Chemical compound C1=CC=CC=C1[As](C=1C=CC=CC=1)C1=CC=CC=C1 BPLUKJNHPBNVQL-UHFFFAOYSA-N 0.000 description 1
- NSPWVJAKNXJHEP-UHFFFAOYSA-N tripropyltin Chemical compound CCC[Sn](CCC)CCC NSPWVJAKNXJHEP-UHFFFAOYSA-N 0.000 description 1
- LDXFCCZPPSEDCI-UHFFFAOYSA-N tris(2-methylphenyl)stibane Chemical compound CC1=CC=CC=C1[Sb](C=1C(=CC=CC=1)C)C1=CC=CC=C1C LDXFCCZPPSEDCI-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Manufacturing Of Electric Cables (AREA)
- Surface Treatment Of Glass (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Non-Insulated Conductors (AREA)
Description
【発明の詳細な説明】
本発明は透明導電膜の製造法に関するものであ
つて、その目的とするところは液晶表示素子、エ
レクトロルミネツセンス表示素子、導電体、抵抗
発熱体、光の選択的吸収剤あるいは美術用品等と
して有用な透明導電膜用インキを用いて工業的に
透明導電膜を生産せんとするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a transparent conductive film, and its purpose is to produce a transparent conductive film for use in liquid crystal display devices, electroluminescent display devices, conductors, resistive heating elements, selective light emitting devices, etc. The purpose is to industrially produce transparent conductive films using inks for transparent conductive films that are useful as absorbents or art supplies.
透明導電膜の製造法として公知に属する方法と
しては、真空蒸着法、スパツタリング法、イオン
プレーテイング法、ラミネート法などが知られて
いる(例えば岡庭、機能材料、第2巻、10号、8
頁、1982年および杉山、表面、第21巻、1月号、
36頁、昭和58年)。また錫化合物を主体としてこ
れにインジウム化合物あるいはアンチモン化合物
を配合し、エチルセルローズとブチルセロソルブ
とを用いてペースト化し、このペーストをスクリ
ーン印刷法によつてガラス基板上に付着させ焼成
する透明導電膜の形成方法も発表されている(特
開昭57−212268号参照)。 Vacuum deposition method, sputtering method, ion plating method, lamination method, etc. are known as methods for producing transparent conductive films (for example, Okaniwa, Functional Materials, Vol. 2, No. 10, 8).
Page, 1982 and Sugiyama, Surface, Volume 21, January issue,
36 pages, 1981). In addition, a transparent conductive film is formed by mixing a tin compound as a main ingredient with an indium compound or an antimony compound, making a paste using ethyl cellulose and butyl cellosolve, and depositing this paste on a glass substrate by screen printing and baking it. A method has also been published (see JP-A-57-212268).
本発明者らはこれまで各種の方法による透明導
電膜の製造に関して多数の研究を行つてきたが、
上記のいずれの方法もかなり高価な装置を必要と
し、且つ大面積の透明導電膜とか図柄化した導電
膜を耐熱性基板上に形成させるには作業性が良好
でなく且つ製品の品質が安定せず、経済的に有効
な方法とはいい難かつたのである。なお公知のペ
ーストを用いるスクリーン印刷法によつて予期し
たほど充分な導電性の再現が困難であつたのであ
る。ここにおいて本発明者らはこのような欠点を
除去するために鋭意努力を傾注してきた結果、今
般遂に刮目すべき発明を完成するに至つたのであ
る。 The present inventors have so far conducted numerous studies on the production of transparent conductive films using various methods.
All of the above methods require fairly expensive equipment, and the workability is not good and the quality of the product is not stable in order to form a large-area transparent conductive film or a patterned conductive film on a heat-resistant substrate. However, it was difficult to say that it was an economically effective method. Furthermore, it was difficult to reproduce sufficient conductivity as expected by the screen printing method using a known paste. The inventors of the present invention have made earnest efforts to eliminate these drawbacks, and as a result, they have finally completed a remarkable invention.
すなわち本発明者らは周期律表第族元素1モ
ルに対し錫およびインジウムがそれぞれ10〜1000
モルなるごとくこれら各元素を含む有機化合物を
有効成分とする透明導電膜用インキを用いて耐熱
性基板上に皮膜を形成させて焼成したのち、オゾ
ンを含有する酸化性雰囲気中で処理する時には非
常に品質のすぐれた透明導電膜を製造しうること
を見いだしたのである。 In other words, the present inventors found that tin and indium each have a content of 10 to 1000% per mole of Group Group elements of the periodic table.
When a film is formed on a heat-resistant substrate using an ink for transparent conductive film whose active ingredient is an organic compound containing moles of each of these elements and then fired, it is extremely difficult to process it in an oxidizing atmosphere containing ozone. They discovered that it is possible to produce a transparent conductive film of excellent quality.
以下、本発明について詳細に説明する。 The present invention will be explained in detail below.
周期律表第族元素とはヒ素、アンチモンおよ
びビスマスよりなる群から選ばれた少なくとも一
つの元素であり、これらは単独であるいは2種以
上の混合物として使用できるものである。そして
これを含む有機化合物とはアンチモンの場合を代
表例にとつて説明すると、アルキルアンチモン、
アラルキルアンチモン、アルケニルアンチモン、
芳香族残基アンチモン、飽和もしくは不飽和の有
機酸アンチモン塩、飽和もしくは不飽和の有機酸
アンチモニル化合物、スチバンの水素原子の一部
が有機化合物基に置換した化合物、スチバンの有
機酸塩、アンチモン塩またはアンチモニル塩の有
機キレート化合物、アルコキシアンチモンならび
に上記のアンチモン化合物の置換基の一部が他の
有機原子団もしくはハロゲン原子で置換されてい
る構造のアンチモン化合物等である。またヒ素化
合物ならびにビスマス化合物もこのアンチモン化
合物に準ずるものである。これらの周期律表第
族元素の有機化合物の共通した特長というのは、
特別の有機溶剤を用いなくても後述する有機錫化
合物および有機インジウム化合物に対して、可溶
性、相溶性、融点降下性あるいは分散性が良好で
あり、美麗な均一性に富む皮膜が容易に形成され
るものでなくてはならない。而もインキにした場
合の保存安定性がよく、その保存中に発火した
り、沈殿したり、ゲル化したり、不必要な反応を
起こしたりすることのないような構造の周期律表
第族有機化合物が有機錫化合物ならびに有機イ
ンジウム化合物に対して選択されねばならない。 The group element of the periodic table is at least one element selected from the group consisting of arsenic, antimony, and bismuth, and these elements can be used alone or in a mixture of two or more. The organic compounds containing this are, using antimony as a representative example, alkylantimony,
aralkylantimony, alkenylantimony,
Aromatic antimony residues, saturated or unsaturated organic acid antimony salts, saturated or unsaturated organic acid antimony compounds, compounds in which some of the hydrogen atoms of stibane are replaced with organic compound groups, organic acid salts of stibane, antimony salts Alternatively, organic chelate compounds of antimonyl salts, alkoxyantimony, and antimony compounds having a structure in which some of the substituents of the above-mentioned antimony compounds are substituted with other organic atomic groups or halogen atoms, etc. Furthermore, arsenic compounds and bismuth compounds are similar to this antimony compound. The common features of these organic compounds of group elements of the periodic table are:
It has good solubility, compatibility, melting point depressing properties, and dispersibility with respect to the organotin compounds and organoindium compounds described below without using a special organic solvent, and a beautiful and uniform film can be easily formed. It must be something that is Moreover, when made into ink, it has good storage stability and has a structure that does not ignite, precipitate, gel, or cause unnecessary reactions during storage. The compounds must be selected for organotin compounds as well as organoindium compounds.
本発明にいう有機錫化合物とは飽和もしくは不
飽和の有機酸錫化合物(一塩基酸、二塩基酸、多
塩基酸、芳香族酸を含む有機酸化合物)または錫
塩の有機キレート化合物である。また有機酸錫化
合物にあつては、有機酸根が錫に1個以上結合し
ておればよいのであつて錫の残余の結合手は水酸
基、アルコキシ基、炭化水素基、カルボニル基、
酸素原子、ハロゲン原子等に結合していてもよ
い。 The organic tin compound referred to in the present invention is a saturated or unsaturated organic acid tin compound (organic acid compound including monobasic acid, dibasic acid, polybasic acid, and aromatic acid) or an organic chelate compound of a tin salt. In addition, in the case of organic acid tin compounds, it is sufficient that one or more organic acid groups are bonded to tin, and the remaining bonds of tin are hydroxyl groups, alkoxy groups, hydrocarbon groups, carbonyl groups,
It may be bonded to an oxygen atom, a halogen atom, etc.
また有機インジウム化合物のとるべき構造も上
記錫化合物同様もしくはこれに準ずるものである
が有機錫化合物と有機インジウム化合物とは同一
の形成の化合物である必要はなく、相溶性、融点
降下性等から考えて互に別異の形成の化合物であ
つた方がよい。しかし乍ら、多塩基酸塩のような
場合には一つの有機酸に錫とインジウムとが混合
して結合していてよいのは勿論である。 In addition, the structure that the organic indium compound should have is the same as or similar to the above tin compound, but the organic tin compound and the organic indium compound do not have to be compounds with the same structure, and should be considered from the viewpoint of compatibility, melting point depressing property, etc. It is better that the compounds are formed differently from each other. However, in the case of polybasic acid salts, tin and indium may of course be mixed and bonded to one organic acid.
周期律表第族有機化合物、有機錫化合物、有
機インジウム化合物を有効成分とする多数の透明
導電膜用インキの有効成分中の各元素の存在比は
モル比にして次のごときものである。 The abundance ratio of each element in the active ingredients of a number of inks for transparent conductive films containing an organic compound of Group Group of the Periodic Table, an organic tin compound, or an organic indium compound as an active ingredient is as follows in terms of molar ratio.
周期律表第族元素1モルに対し錫およびイン
ジウムの存在量はそれぞれ10〜1000モルとくに好
ましくはそれぞれ50〜500モルである。錫および
インジウムの存在量がそれぞれ10モル以下ではイ
ンキの性能が充分でなく印刷適性が悪い。また錫
およびインジウムの存在量がそれぞれ1000モル以
上であれば周期律表第族元素の含有効果が充分
に発揮できず製品の導電膜の電導性の向上が認め
られない。工業用として使用し易い周期律表第
族元素有機化合物はトリフエニルアンチモン、ト
リトリルアンチモン、トリフエニルアルシン、次
サリチル酸ビスマス、次没食子酸ビスマス、オク
チル酸ビスマスなどであり、有機錫化合物として
はトリメナル錫(メタ)アクリレート、トリエチ
ル錫(メタ)アクリレート、トリプロピル錫(メ
タ)アクリレート、トリブチル錫(メタ)アクリ
レート、マレイン酸錫、フマル酸錫、イタコン酸
錫、ならびにこれからのオリゴマー、ポリマー、
アルコキシ錫マレエート、アルコキシ錫サクシネ
ート、アルコキシ錫マロネート、オクチル酸錫、
ナフテン酸錫等である。有機インジウム化合物と
しては酢酸インジウム、(メタ)アクリル酸イン
ジウム、カプロン酸インジウム、オクチル酸イン
ジウム、ナフテン酸インジウム、アジピン酸イン
ジウム、マレイン酸インジウム、マロン酸インジ
ウム、コハク酸インジウム、インジウム塩アセチ
ルアセトネート等である。 The amounts of tin and indium present are each 10 to 1000 mol, particularly preferably 50 to 500 mol, each per 1 mol of the group element of the periodic table. If the amounts of tin and indium are each less than 10 moles, the performance of the ink will be insufficient and printability will be poor. Furthermore, if the amounts of tin and indium are each 1000 moles or more, the effect of containing the elements of group group of the periodic table cannot be sufficiently exhibited, and no improvement in the conductivity of the conductive film of the product is observed. Organic compounds of Group Elements of the Periodic Table that are easy to use for industrial purposes include triphenylantimony, tritolylantimony, triphenylarsine, bismuth subsalicylate, bismuth subgallate, and bismuth octylate, and examples of organic tin compounds include trimenaltin. (meth)acrylate, triethyltin (meth)acrylate, tripropyltin (meth)acrylate, tributyltin (meth)acrylate, tin maleate, tin fumarate, tin itaconate, as well as future oligomers and polymers,
Alkoxytin maleate, alkoxytin succinate, alkoxytin malonate, tin octylate,
tin naphthenate, etc. Examples of organic indium compounds include indium acetate, indium (meth)acrylate, indium caproate, indium octylate, indium naphthenate, indium adipate, indium maleate, indium malonate, indium succinate, and indium salt acetylacetonate. be.
以上の周期律表第V族元素有機化合物、有機錫
化合物、有機インジウム化合物は二、三の予備試
験を行つてその相互間の相溶性、混合具合が良好
であつたならば、それらを別々に合成して配合し
たり、あるいは配合したのち加熱均一化処理すな
わちクツキングを行つて材料相互間にある程度の
反応を行わせて安定化させてやつてもよいし、場
合によつては例えばアンチモン、錫およびインジ
ウムの合金あるいは無機塩混合物もしくは錯体を
作つておいて、これらを原料にして所用の有機化
合物にしてもよいのである。 The above organic compounds of group V elements of the periodic table, organic tin compounds, and organic indium compounds are subjected to two or three preliminary tests, and if their mutual compatibility and mixing condition are good, they can be separated separately. It may be synthesized and blended, or after blending, heat homogenization treatment, that is, cooking, may be performed to cause a certain degree of reaction between the materials and stabilize the material. It is also possible to prepare an alloy or inorganic salt mixture or complex of indium and indium, and use these as raw materials to produce the desired organic compound.
透明導電膜用インキはそれがインキとしての適
性を有するならば有効成分たる各主要元素の含有
量が可及的に高いことが望ましく、そのままで使
用したいものであるが、インキとして用いる関係
上その塗布、印刷あるいは付着等の機能性を発揮
せしめるため適当量のバインダーとか溶剤等を添
加してインキ化することも必要な場合がある。 If an ink for transparent conductive film is suitable as an ink, it is desirable that the content of each main element as an active ingredient is as high as possible, and it is desirable to use it as is, but since it is used as an ink, it is desirable that the content of each main element as an active ingredient is as high as possible. In order to exhibit functionality such as coating, printing, or adhesion, it may be necessary to add an appropriate amount of a binder or solvent to form an ink.
また、本発明にいう耐熱性基板としては、ガラ
ス、石英ガラス、サフアイア、スピネル、ルテ
ル、ケイ素、アルミナ、ジルコニア、ジルコニ
ア・アルミナ、ムライト、各種ガーネツト、チタ
ン酸バリウム、チタン酸ストロンチウム、チタン
酸カリウム、雲母、アスベストのほか種々のセラ
ミツクス等耐熱性のよいものが有用であり経済的
見地からはガラス、石英ガラス、雲母、アルミ
ナ、ムライト、陶磁器等の基板がすぐれている。 Further, heat-resistant substrates referred to in the present invention include glass, quartz glass, sapphire, spinel, lutile, silicon, alumina, zirconia, zirconia/alumina, mullite, various garnets, barium titanate, strontium titanate, potassium titanate, In addition to mica and asbestos, materials with good heat resistance such as various ceramics are useful, and from an economic standpoint, substrates such as glass, quartz glass, mica, alumina, mullite, and ceramics are excellent.
また、皮膜を形成させる方法としては、上記透
明導電膜用インキを用いて浸漬、吹付け、回転塗
布、印刷、例えばスクリーン印刷、転写印刷等の
方法等が用いられる。なお、印刷法としては、例
えば本出願人らが既に発明したような薄膜印刷方
法特開昭58−181682号、特公平3−4395号、特公
平2−16227号、特公平2−16228号参照)を適用
すれば、特に均一な厚さの薄膜を容易に形成させ
ることが保証されるのである。 In addition, as a method for forming the film, methods such as dipping, spraying, spin coating, and printing, such as screen printing and transfer printing, using the above-mentioned ink for transparent conductive films, are used. As for the printing method, for example, see the thin film printing method already invented by the present applicant in Japanese Patent Application Laid-Open No. 181682/1982, Japanese Patent Publication No. 3-4395, Japanese Patent Publication No. 2-16227, and Japanese Patent Publication No. 2-16228. ), it is ensured that thin films of particularly uniform thickness can be easily formed.
本発明の方法を実施するには上記のインキ皮膜
の形成工程が終つた後、必要に応じてインキ皮膜
の乾燥硬化を促進せしめるため熱風乾燥あるいは
紫外線照射、その他の定着操作を施す工程にかけ
られる。このようにして均質なインキ皮膜が完成
された耐熱性基板は、次のその表面を300℃〜600
℃に加熱焼成されるのであるが、この過程を通じ
て本発明の目的とする透明導電膜が形成されてゆ
くのである。この際の加熱焼成は、インキ皮膜中
の有機物の炭素分等を可及的に酸化分解し、かつ
除去するために必要な工程であつて、これは酸化
性雰囲気中で行われるのが普通である。そしてこ
の際注意すべきことは焼成温度が300℃以下の場
合、炭素分が基板表面上に残留し、また600℃以
上の場合残留炭素分がかえつて基板中に混入した
り、基板が変形したりして基板に汚点とか歪みと
かが生じる心配があるので焼成温度は300〜600℃
にすべきである。更に本発明においては、前記の
焼成条件のうち特にその雰囲気の選択も重要な因
子であつて、これについては本発明者らの多くの
実験からこの焼成を酸化性雰囲気、例えば高酸素
気流中もしくは若干のオゾンを含有する空気中で
行えば良質の製品が得られることが約束され、さ
らに実質的操作法としてはとくに焼成後の時期を
選んでオゾンをかなり含んだ空気を基板上に流す
ことによつて比較的容易に目的を達成しえること
が見い出された。 To carry out the method of the present invention, after the above-mentioned ink film formation step is completed, the ink film is subjected to a step of hot air drying, ultraviolet irradiation, or other fixing operation, if necessary, to accelerate drying and hardening of the ink film. The heat-resistant substrate, on which a homogeneous ink film has been completed in this way, is then heated at 300°C to 600°C.
The transparent conductive film that is the object of the present invention is formed through this process. The heating and baking process at this time is a necessary step to oxidize and decompose and remove as much of the organic carbon content as possible in the ink film, and this is usually carried out in an oxidizing atmosphere. be. At this time, it is important to note that if the firing temperature is below 300℃, carbon content will remain on the substrate surface, and if the firing temperature is above 600℃, the residual carbon content may get mixed into the substrate or the substrate may become deformed. The firing temperature is 300 to 600℃ because there is a risk of stains or distortions on the board.
should be. Furthermore, in the present invention, the selection of the atmosphere among the above-mentioned firing conditions is also an important factor, and based on many experiments conducted by the present inventors, it has been found that the firing is carried out in an oxidizing atmosphere, such as in a high oxygen stream or It is guaranteed that a high-quality product will be obtained if the process is carried out in air containing a small amount of ozone, and the practical method is to flow air containing a considerable amount of ozone over the substrate at a particular time after firing. It has thus been found that the objective can be achieved relatively easily.
本発明は、以上のような過程を経て実行できる
もので、本発明によつて得られた透明導電膜は酸
化インジウムと酸化錫を主体とし、これに適当量
の第族元素酸化物がドーピングされた形の構造
を有しており、美しく作られた導電膜は任意の形
状を保持するとともに、曇り、班点、着色による
欠陥が極めて少なく、かつ電気伝導性が良いので
ある。適当な材料関係および操作条件を選択する
ことにより、その膜内での部分的な不均一点の発
生(これは大面積のものに起り易い)という難問
も解消することができるのである。 The present invention can be carried out through the process described above, and the transparent conductive film obtained by the present invention is mainly composed of indium oxide and tin oxide, which is doped with an appropriate amount of group element oxide. The beautifully made conductive film retains any desired shape, has extremely few defects due to cloudiness, speckles, and coloring, and has good electrical conductivity. By selecting appropriate material relations and operating conditions, the difficult problem of the occurrence of localized non-uniform spots within the membrane (which tends to occur with large areas) can also be overcome.
本発明者らの多数の実験例中より代表的な例を
抽出して次に示すが、本発明は以下に示す実施例
のみに限定して解釈されるべきでなく、任意にそ
の実施態様を変更し得ることは当然である。 Representative examples are extracted from among the many experimental examples of the present inventors, and are shown below. However, the present invention should not be interpreted as being limited to the examples shown below, and the embodiments thereof may be arbitrarily modified. Of course, it can be changed.
実施例 1
オクチル酸インジウム100部、オクチル酸錫14
部、オクチル酸アンチモン0.5部、非イオン系界
面活性剤1部、2−エチルヘキシルアルコール20
部、およびキシレン100部からなる溶液をインキ
として、スピンナーを用いて、ガラス基板に
2000rpmで20秒間塗布した。Example 1 100 parts of indium octylate, 14 parts of tin octylate
parts, antimony octylate 0.5 parts, nonionic surfactant 1 part, 2-ethylhexyl alcohol 20 parts
Using a spinner, apply a solution of 100 parts of xylene to a glass substrate using a spinner.
It was applied for 20 seconds at 2000 rpm.
次いで、このガラス基板を200℃の熱風乾燥器
内で30分放置した後、電気炉で500℃で30分焼成
した。電気炉から取り出したガラス板を直ちに、
オゾン気流中で10分間保持した。この際の気流中
のオゾン濃度は6.6g/m3であつた。 Next, this glass substrate was left in a hot air dryer at 200°C for 30 minutes, and then fired in an electric furnace at 500°C for 30 minutes. Immediately remove the glass plate from the electric furnace.
It was kept in an ozone stream for 10 minutes. The ozone concentration in the airflow at this time was 6.6 g/m 3 .
以上の処理を行つたのち、冷却し、ガラス板を
取り出して検査した結果、光の透過率91.3%、表
面抵抗2.0kΩ/□の透明導電性皮膜が形成されて
いた。 After performing the above treatment, the glass plate was cooled, taken out, and inspected. As a result, a transparent conductive film with a light transmittance of 91.3% and a surface resistance of 2.0 kΩ/□ was formed.
実施例 2
インジウムアセチルアセトネート100部、トリ
プチルスズメタクリレート50部、トリフエニルア
ンチモン0.5部、および非イオン系界面活性剤2
部からなる混合物を、キシレン/シクロヘキサン
=1/1の混合溶剤で希釈し、粘度を200cpsとし
たものをインキとした。Example 2 100 parts of indium acetylacetonate, 50 parts of triptyltin methacrylate, 0.5 part of triphenylantimony, and nonionic surfactant 2
An ink was prepared by diluting the mixture consisting of 1/2 xylene/cyclohexane with a mixed solvent of 1/1 xylene/cyclohexane to give a viscosity of 200 cps.
このインキを用い、凹版としては深度30μm、
開口部平均径及び開口部面積は各々40μm、45
%、60μm、10.0%、80μm、17.5%、1cm3当りの
凹部容積はそれぞれ約0.1mm3、約0.2mm3、約0.35mm3
なる3種の小孔部を必要部分に設けた凹版を用
い、その3種の小孔部にインキを充填し、表面を
鋼製のドクター刃で余分のインキをかき取つた
後、表面平滑なる凸部を有するゴム系感光性凸
版、旭化成製APR−K−50(商品名)を貼付した
版銅を圧接した凸部の頂部に3種の小孔部より各
容積に応じたインキを転移し、この凸部を被印刷
物であるガラス板表面に圧接し、凸部図柄通りの
3種類の厚みの異なるインキ塗膜を印刷した。 Using this ink, the depth of the intaglio is 30μm,
The average opening diameter and opening area are 40 μm and 45
%, 60μm, 10.0%, 80μm, 17.5%, the recess volume per 1cm3 is approximately 0.1mm3 , approximately 0.2mm3 , approximately 0.35mm3 , respectively.
Using an intaglio plate with three types of small holes in the necessary areas, the three types of small holes were filled with ink, and the surface was scraped off with a steel doctor blade to remove excess ink. A rubber-based photosensitive letterpress plate with convex parts, APR-K-50 (trade name) manufactured by Asahi Kasei Co., Ltd., was attached to the top of the convex part, and ink according to the volume was transferred from three types of small holes to the top of the convex part. The protrusions were pressed against the surface of a glass plate to be printed, and three types of ink coatings with different thicknesses were printed according to the designs of the protrusions.
このガラス板を200℃で30分間乾燥したのち、
電気炉で500℃で30分間焼成し、焼成後直ちにオ
ゾン気流を10分間流して冷却する、この時のオゾ
ン気流の濃度は11.7g/m3空気であつた。焼成
後、冷却し、検査を行つた結果、出来上つた透明
導電膜はそれぞれ膜厚が、700〜800Å、900〜
1100Å、1200〜1500Åであり、透過率はそれぞれ
93.3%、91.3%、88.7%、また表面電気抵抗がそ
れぞれ3.0kΩ/□、2.2kΩ/□、1.0kΩ/□である
ことが認められた。 After drying this glass plate at 200℃ for 30 minutes,
It was fired in an electric furnace at 500°C for 30 minutes, and immediately after firing, it was cooled by flowing an ozone stream for 10 minutes.The concentration of the ozone stream at this time was 11.7 g/m 3 air. After baking, cooling and inspection, the resulting transparent conductive films had film thicknesses of 700-800 Å and 900-800 Å, respectively.
1100Å, 1200~1500Å, and the transmittance is respectively
93.3%, 91.3%, and 88.7%, and the surface electrical resistances were found to be 3.0 kΩ/□, 2.2 kΩ/□, and 1.0 kΩ/□, respectively.
実施例 3
ソルビル酸インジウム200部、ジプチル錫ジア
セテート50部、次サルチル酸ビスマス0.5部、エ
チルセルローズ25部、アセト酢酸エチル100部、
およびシクロヘキサノン100部の組成よりなるス
クリーン印刷用インキを調整した。Example 3 200 parts of indium sorbate, 50 parts of diptyltin diacetate, 0.5 parts of bismuth subsalicylate, 25 parts of ethyl cellulose, 100 parts of ethyl acetoacetate,
and 100 parts of cyclohexanone was prepared.
このインキを用いて、ガラス板に150線/イン
チのシルクスクリーン印刷法による図柄を形成さ
せた。次いで印刷ガラス板を150℃で30分間乾燥
し、連続して電気炉中で480℃で30分間焼成した。
この30分焼成ののち、10分間はオゾン気流を流し
た。この際のオゾン濃度は7.1g/m3であつた。
ガラス基板を室温まで徐冷したのち、とり出して
検査したところ光の透過率は88.2%、表面抵抗は
1.5kΩ/□であり、所望の図柄通りの精密な美し
い透明導電膜が形成されていた。 Using this ink, a pattern was formed on a glass plate by silk screen printing at 150 lines/inch. The printed glass plate was then dried at 150°C for 30 minutes and subsequently fired in an electric furnace at 480°C for 30 minutes.
After firing for 30 minutes, an ozone stream was passed for 10 minutes. The ozone concentration at this time was 7.1 g/m 3 .
After slowly cooling the glass substrate to room temperature, it was taken out and inspected, and the light transmittance was 88.2%, and the surface resistance was 88.2%.
The resistance was 1.5 kΩ/□, and a beautiful transparent conductive film with the desired pattern was formed.
Claims (1)
ンジウムがそれぞれ10〜1000モルなるごとくこれ
ら各元素を含む有機化合物を有効成分とする透明
導電膜用インキを用いて耐熱性基板上に皮膜を形
成されて焼成を行なつたのち、オゾンを含有する
酸化性雰囲気中で処理することを特徴とする透明
導電膜の製造法。 2 周期律表第族元素がヒ素、アンチモンおよ
びビスマスよりなる群から選ばれた少なくとも一
つの元素であることを特徴とする特許請求範囲第
1項記載の透明導電膜の製造法。[Scope of Claims] 1. Heat resistance is achieved by using an ink for a transparent conductive film containing an organic compound as an active ingredient containing tin and indium in an amount of 10 to 1000 moles each for each mole of a group element of the periodic table. 1. A method for producing a transparent conductive film, which comprises forming a film on a substrate, firing the film, and then treating the film in an oxidizing atmosphere containing ozone. 2. The method for producing a transparent conductive film according to claim 1, wherein the Group Group element of the periodic table is at least one element selected from the group consisting of arsenic, antimony, and bismuth.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58025273A JPS59149963A (en) | 1983-02-16 | 1983-02-16 | Ink for use in forming electrically conductive transparent film and production of electrically conductive transparent film by using the said ink |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58025273A JPS59149963A (en) | 1983-02-16 | 1983-02-16 | Ink for use in forming electrically conductive transparent film and production of electrically conductive transparent film by using the said ink |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59149963A JPS59149963A (en) | 1984-08-28 |
JPH052711B2 true JPH052711B2 (en) | 1993-01-13 |
Family
ID=12161419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58025273A Granted JPS59149963A (en) | 1983-02-16 | 1983-02-16 | Ink for use in forming electrically conductive transparent film and production of electrically conductive transparent film by using the said ink |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59149963A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101302314B1 (en) * | 2013-03-08 | 2013-08-30 | 주식회사 엔이에이 | Winding wire and method for producing the wire |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS565354A (en) * | 1979-06-21 | 1981-01-20 | Alps Electric Co Ltd | Paste for forming transparent conductive film |
JPS5767674A (en) * | 1980-10-13 | 1982-04-24 | Tokyo Denshi Kagaku Kabushiki | Solution forming transparent electro-conductive film |
-
1983
- 1983-02-16 JP JP58025273A patent/JPS59149963A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS565354A (en) * | 1979-06-21 | 1981-01-20 | Alps Electric Co Ltd | Paste for forming transparent conductive film |
JPS5767674A (en) * | 1980-10-13 | 1982-04-24 | Tokyo Denshi Kagaku Kabushiki | Solution forming transparent electro-conductive film |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101302314B1 (en) * | 2013-03-08 | 2013-08-30 | 주식회사 엔이에이 | Winding wire and method for producing the wire |
Also Published As
Publication number | Publication date |
---|---|
JPS59149963A (en) | 1984-08-28 |
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