JPH05267219A - Method of forming metal plug - Google Patents

Abstract

PURPOSE:To form a TiN or TiNO film at lower temperature while reducing the Cl content in the TiN layer. CONSTITUTION:A method of forming a metal plug comprises the steps of providing an opening 106 in an insulating layer 104 on a semiconductor substrate 100; depositing TiN or TiON 112 both on the insulating layer 104 and in the opening 106 by electron cyclotron resonance plasma CVD using a source gas of TiCl3 and depositing a metallic material 114 in the opening 106.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a metal plug in manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Electronic devices such as semiconductor devices have been miniaturized year by year. In particular, with the miniaturization of semiconductor integrated circuits, the dimensions of contact holes, via holes, or through holes (hereinafter also collectively referred to as connection holes) are becoming smaller and smaller. The connection hole is formed by embedding a wiring material in the opening formed on the semiconductor substrate.
With the conventional sputtering technique in which aluminum or an aluminum alloy is used as the wiring material and the opening is filled with the wiring material by the bias sputtering method or the like, it is no longer possible to form fine connection holes.

Under such a background, a so-called blanket CVD method which has good step coverage has been attracting attention. In the blanket CVD method, as shown in FIG. 4, the interlayer insulating layer 104 formed on the semiconductor substrate 100.
An opening 106 is formed in the metal layer 114, and a metal layer 114 made of, for example, tungsten is formed on the upper surface of the interlayer insulating layer and in the opening by a CVD method. After that, the metal layer 114 on the upper surface of the interlayer insulating layer is selectively removed by etch back to form a metal plug made of metal in the opening 106, thereby completing the connection hole.

Blanket C using this tungsten
In the VD method, since tungsten has poor adhesion to the base of the semiconductor substrate 100 or the like, it is essential to form an adhesion layer between the metal layer and the semiconductor substrate. A TiN layer or a TiON layer is often used as the adhesion layer. However, as shown in FIG. 4, when coverage of the adhesion layer 108 with respect to the opening is poor, blanket CVD is performed.
When a metal layer is deposited on the interlayer insulating layer 104 and in the opening 106 by the method, there is a problem that a void (hollow portion) 116 is generated in the metal layer in the opening 106.

Furthermore, an adhesion layer made of TiN is usually used as a CV.
In the case of forming by the D method, since TiCl ₄ is used as a source gas, there is a problem that Cl is easily taken into the TiN layer. See, for example, the article “Photo Assi.
sted LP-CVD TiN For Deep Submicron Contact Using O
rgano-titanium Compound, '' Koichi Ikeda et al, 199.
0 See Symposium on VLSI Technology pp61-62. When Cl is taken into the TiN layer, the quality of the TiN layer (adhesion layer) is deteriorated and the barrier property is deteriorated.

Therefore, a method for forming a TiN layer by electron cyclotron resonance (ECR) plasma CVD has been proposed (see, for example, Akahori et al., 29a-ZA-6, p. 591, Spring Applied Science Society of Applied Physics, p. 591). According to this method, it is said that the TiN layer can be formed with good coverage, and moreover, the amount of Cl taken into the TiN layer is reduced by forming the TiN film at a temperature of about 650 ° C.

[0007]

A TiN layer (including a Ti / TiN two-layer structure in which a Ti layer is formed under the TiN layer and the resistance between the TiN layer and the impurity diffusion region is reduced) is described above. When used as an adhesion layer in the blanket CVD method as described above, it is necessary to form the film at a temperature of about 650 ° C. in order to reduce the amount of Cl taken into the TiN layer. However, when the TiN layer is formed at such a temperature, there is a problem in that nucleus growth of TiN occurs in the vapor phase, which grows to generate particles. in addition,
It is desirable to form the TiN layer at a temperature as low as possible in order to prevent the thermal history from being applied to the semiconductor substrate as much as possible or from the viewpoint of energy saving. Further, to further reduce the Cl content in the formed TiN layer,
It is also preferable for exhibiting the function of the TiN layer as the adhesion layer.

Accordingly, it is an object of the present invention to provide conventional TiCl
Compared with the method using ₄ gases, the TiN layer has a higher Cl
It is an object of the present invention to provide a method of a metal plug which can reduce the amount of metal incorporated and can form a TiN layer or a TiON layer at a lower temperature.

[0009]

The above objects are as follows: (a) a step of forming an opening in an interlayer insulating layer formed on a semiconductor substrate; and (b) using TiCl ₃ as a film forming source gas,
By electron cyclotron resonance plasma CVD method, TiN
And a TiON layer are formed on the upper surface of the interlayer insulating layer and in the opening, and (c) a metal material is formed in the opening, which is achieved by the method for forming a metal plug of the present invention. be able to.

Before forming the TiN layer or the TiON layer on the upper surface and the opening of the interlayer insulating layer by the electron cyclotron resonance plasma CVD method, by the electron cyclotron resonance plasma CVD method on the upper surface and the opening of the interlayer insulating layer, T
It is desirable to form the i layer.

[0011]

According to the method of forming a metal plug of the present invention, TiCl ₃ or TiON is formed by using TiCl ₃ as a source gas.
Form the layers. Compared to the decomposition of TiCl ₄ at about 650 ° C, TiCl ₃ decomposes at a relatively low temperature (below about 500 ° C) and has a small absolute amount of Cl. Therefore, the TiN layer or the TiON layer can be formed at a lower temperature, and when the TiN layer is formed, the amount of Cl taken into the TiN layer is small. Further, since the TiN layer or the TiON layer is formed by the electron cyclotron resonance plasma CVD method having a long mean free path, it is possible to form an adhesion layer having a large film thickness and good coverage even at the bottom of the opening.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described based on embodiments with reference to the drawings.

(Embodiment 1) Embodiment 1 is an example in which the metal plug forming method of the present invention is applied when a contact hole is formed by a blanket tungsten CVD method, and is formed between a semiconductor substrate and tungsten. A Ti layer and a TiN layer are continuously formed as an adhesion layer and a barrier layer. In Example 1, the ECR plasma processing apparatus shown in FIG. 2, which can take a long mean free path of the raw material gas, was used.

First, an outline of the ECR plasma processing apparatus shown in FIG. 2 will be described. The plasma process apparatus 1 includes a film forming chamber 10 and a plasma chamber 20. A susceptor 12 for mounting the semiconductor substrate 100 is arranged in the film forming chamber 10. A lamp heating means 50 is arranged below the susceptor 12. The semiconductor substrate 100 can be heated by the lamp heating means 50.

The plasma chamber 20 is the film forming chamber 10.
Communicates with the upper part of. A microwave introduction window 22 is provided above the plasma chamber 20, and a rectangular wave guide 26 for introducing a 2.45 MHz microwave is provided above the microwave introduction window 22. A magnetic coil 24 is arranged around the plasma chamber 20. RF power is applied to the microwave introduction window 22 from the RF power supply 28. Argon gas is supplied to the plasma chamber 20 from an argon gas inlet 30. Argon gas is introduced to clean the microwave introduction window 22 (for this technique, see Akabori et al. 3P-2F-1 on page 721 of the Society of Applied Physics, Japan, Spring 1989 Proceedings).

In the film forming chamber 10, a TiCl ₃ supply unit, a mass flow controller and a first gas introduction unit 40 are provided.
Through which TiCl ₃ gas is supplied. Incidentally, TiCl ₃ is solid, and a means for sublimating solid TiCl ₃ into gas is provided in the TiCl ₃ supply part, but it is not shown. Further, N ₂ gas and H ₂ gas are similarly supplied to the film forming chamber 10 through the mass flow controller and the second gas introducing unit 42. The gas in the film forming chamber 10 is exhausted from the gas exhaust unit 16 to the outside of the system. Note that FIG.
Inside, 32 is a plasma flow. Reference numeral 100 is a semiconductor substrate having the structure shown in FIG. Thermocouple (not shown)
The temperature of the semiconductor substrate 100 is monitored by, and the power supplied to the lamp 52 is controlled by a known temperature control means (not shown) to keep the temperature of the semiconductor substrate 100 constant.

A process of forming a contact hole by the blanket tungsten CVD method using the ECR plasma processing apparatus shown in FIG. 2 will be described below with reference to FIG. Incidentally, a Ti layer and a TiN layer were continuously formed as an adhesion layer and a barrier layer to be formed between the semiconductor substrate and the tungsten layer.

[Step-100] Substrate 1 such as a silicon substrate
On the diffusion layer 102 of 00, an interlayer insulating layer 104 made of SiO ₂ is formed by the CVD method, and the interlayer insulating layer 104 is formed by the photolithography method and the dry etching method.
The opening 106 is formed (see FIG. 1A). For this step, various ordinary methods can be appropriately used.

[Step-110] Next, the EC shown in FIG.
A Ti layer and a TiN layer are formed using the R-CVD apparatus 1. First, TiCl ₃ gas is supplied to the film forming chamber 10 from the first gas introducing unit 40, and the Ti layer 1 having a thickness of 30 nm is formed.
10 is formed on the upper surface of the interlayer insulating layer 104 and in the opening 106. The film forming conditions for the Ti layer 110 were as follows. Gas TiCl ₃ / Ar / H ₂ = 10/40/5
0 sccm temperature about 400 ° C. pressure 0.13 Pa microwave 2.8 kW The semiconductor substrate 100 is about 40 by the lamp heating means 50.
Heated to 0 ° C.

[Step-120] Then, similarly, TiCl ₃ gas is flown from the first gas inlet 40, and N ₂ gas and H ₂ gas are passed from the second gas inlet 42 to form a TiN layer having a thickness of 50 nm. 112 is formed on the Ti layer 110. TiN
The film forming conditions for the layer 112 were as follows. Temperature Approx. 500 ° C. Microwave 2.8 kW Pressure 0.13 Pa RF bias 300 W Gas TiCl ₃ / N ₂ / H ₂ / Ar = 10/30/30/50 sccm The gas flow rate ratio can be set appropriately. .. The semiconductor substrate 100 is heated to about 500 ° C. by the lamp heating means 50. Also, since RF bias is applied,
The coverage of TiN is improved, the film becomes more dense, and the barrier property is improved. Since the TiN layer 112 is formed at a low pressure, it is also formed thickly on the bottom of the opening 106, and the structure shown in FIG. 1B is obtained. Further, Cl is also exhausted from the ECR-CVD apparatus 1 in the form of a highly volatile compound HCl, the Cl content of the Ti layer and the TiN layer is reduced, and the film quality is improved. Further, since these layers are continuously formed without breaking the vacuum, the film quality is stable and the throughput is improved.

Instead of the TiN layer 112, TiON is used.
When forming a layer, the film forming conditions may be as follows. Temperature Approx. 500 ° C. Microwave 2.8 kW Pressure 0.13 Pa RF bias 300 W gas TiCl ₃ / N ₂ O / H ₂ / Ar = 10/30/30/50 sccm In this case, Cl is a highly volatile compound TiCl _X O Exhausted from the ECR-CVD apparatus 1 in the form of _Y, the Cl content of the Ti layer and the TiON layer is reduced, and the film quality is improved.

[Step-130] Next, a tungsten layer is formed on the TiN layer 112 by a blanket tungsten CVD method.
To form on. The formation conditions were the following two stages. 1st stage (nuclear growth stage) WF ₆ / SiH ₄ = 25/10 sccm pressure 1.06 × 10 ⁴ Pa temperature 475 ° C 2nd stage (fast growth stage) WF ₆ / H ₂ = 60/360 sccm pressure 1.06 × 10 ⁴ Pa Temperature 475 ° C Due to this, the tungsten layer 114 was formed on the TiN layer 112 in the opening 106 with good coverage. Thus, the structure shown in FIG. 1C was obtained. At this time, Ti
Since the / TiN layer does not have an overhang and the coverage is good, no void is generated in the tungsten layer in the opening 106. In addition, the opening 106
In, the Ti / TiN layer functioned as a film having a good barrier property. Then, the tungsten layer on the upper surface of the interlayer insulating layer 104 is selectively etched back to complete the metal plug having the tungsten layer formed in the opening 106.

Example 2 In Example 2, as shown in FIG.
An ECR plasma process apparatus having two deposition chambers connected in series via a gate valve was used. Then, in each film forming chamber, the Ti layer and the Ti layer
The N layer was formed independently. In addition, N ₂ and H ₂ gases were used as raw material gases for forming the TiN layer.

FIG. 3 shows an outline of the ECR plasma process apparatus 200 used in the second embodiment. Incidentally, FIG. 3 and FIG.
In, the same reference number indicates the same element.

ECR plasma process apparatus 2 shown in FIG.
00 is the first film forming chamber 2 for forming the Ti layer
10 and Ti-based oxynitrides and nitrides (for example, TiO 2
It comprises a second film forming chamber 220 for forming an N layer or a TiN layer). In the first film forming chamber 210, Ti
TiCl ₃ gas is supplied from the Cl ₃ supply unit through the mass flow controller and the first gas introduction unit 40. Further, the H ₂ gas is similarly supplied to the film forming chamber 210 through the mass flow controller and the second gas introducing unit 42. The TiCl ₃ gas is supplied to the second film forming chamber 220 from the TiCl ₃ supply unit through the mass flow controller and the first gas introduction unit 40A, and the N ₂ gas and the H ₂ gas are similarly supplied to the mass flow controller and the second flow chamber. It is supplied through the gas introduction part 42A. The first film forming chamber 210 and the second film forming chamber 220 are connected via a gate valve 230. In addition, the lamp heating means 50, 50A are used for the film forming chambers 210, 2 respectively.
It is provided below the susceptors 12 and 12A in 20.

A process of forming a contact hole by the blanket tungsten CVD method using the plasma processing apparatus 200 shown in FIG. 3 will be described with reference to FIG. Incidentally, a Ti layer and a TiN layer were continuously formed as an adhesion layer and a barrier layer to be formed between the semiconductor substrate and the tungsten layer.

[Step-200] First, a semiconductor device having the structure shown in FIG. 1A was formed in the same manner as in Example 1.

[Step-210] Next, an EC having two film forming chambers shown in FIG.
In the R-CVD apparatus, first, in the film forming chamber 210,
A Ti layer 110 having a thickness of 30 nm is formed under the same conditions as in Example 1. That is, the conditions for forming the Ti layer 110 were as follows. Gas TiCl ₃ / Ar / H ₂ = 10/40/5
0 sccm temperature about 400 ° C. pressure 0.13 Pa microwave 2.8 kW The semiconductor substrate 100 is about 40 by the lamp heating means 50.
Heated to 0 ° C.

[Step-220] After the Ti layer is formed, the semiconductor substrate 100 is transferred to the second film forming chamber 220 by a transfer means (not shown in FIG. 3) through the gate valve 230.
The TiCl ₃ from the first gas inlet 40A,
N ₂ and H ₂ gas are flown from the second gas inlet 42A, and T
The iN layer 112 is formed. The specific conditions for forming the TiN layer were as follows. The semiconductor substrate 100 is heated to about 500 ° C. by the lamp heating means 50A. Temperature about 500 ° C. microwave 2.8 kW pressure 0.13 Pa RF bias 300 W gas TiCl ₃ / N ₂ / H ₂ / Ar = 10/30/30/50 sccm The ratio of gas flow rates can be set appropriately. Also,
Since the RF bias is applied, the coverage of TiN is improved, a more dense film can be obtained, and the barrier property of the TiN layer is improved. Furthermore, since the TiN layer is formed at a low pressure, it is also formed thickly at the bottom of the opening 106, and the structure shown in FIG. 1B is obtained. Also, as in Example 1, C
l is also evacuated in the form of HCl, which is a highly volatile compound, so that the content of Cl in the TiN layer is reduced, and T
Since the i layer and the TiN layer are continuously formed, not only the film quality is improved, but also the throughput is improved.

When a TiO layer is formed instead of the TiN layer 112, TiO is formed under the conditions described in the first embodiment.
The N layer may be formed.

[Step-230] Next, a tungsten layer is formed on the TiN layer 112 by a blanket tungsten CVD method.
To form on. The formation conditions were as follows. WF ₆ / H ₂ = 60/360 sccm Pressure 1.06 × 10 ⁴ Pa Temperature 475 ° C. Alternatively, the tungsten layer can be formed in two steps as in the first embodiment. 1st stage (nuclear growth stage) WF ₆ / SiH ₄ = 25/10 sccm pressure 1.06 × 10 ⁴ Pa temperature 475 ° C 2nd stage (fast growth stage) WF ₆ / H ₂ = 60/360 sccm pressure 1.06 × 10 ⁴ Pa Temperature 475 ° C Due to this, the tungsten layer 114 was formed on the TiN layer 112 in the opening 106 with good coverage. Thus, the structure shown in FIG. 1C was obtained. At this time, Ti
Since the / TiN layer does not have an overhang and the coverage is good, no void is generated in the tungsten layer in the opening 106. In addition, the opening 106
In, the Ti / TiN layer functioned as a film having a good barrier property. Then, the tungsten layer on the upper surface of the interlayer insulating layer 104 is selectively etched back to complete the metal plug having the tungsten layer formed in the opening 106.

Although the method for forming the metal plug of the present invention has been described based on the embodiments, the present invention is not limited to these embodiments. As mentioned earlier, TiN
Instead of forming a layer, a TiON layer can be formed. In addition, blanket CVD using tungsten
Mo, Ti, Ni, Co, Al, Cu instead of the method
Or the like, or the present invention can be applied to a blanket CVD method using various silicides such as W, Mo, Ti, Ni, and Co.

Further, instead of the blanket CVD method, so-called aluminum or aluminum alloy may be used to form the metal plug by the high temperature sputtering method. In this high temperature sputtering method, since the semiconductor substrate is heated to a high temperature, the wiring material deposited in the opening is also heated to about 400 ° C. or higher and the melting point or lower. As a result, the softened wiring material becomes in a fluidized state and can flow in the opening. That is, Ti layer / TiN layer or T
After forming the i layer / TiON layer, an aluminum alloy composed of Al-1% Si can be continuously formed in another chamber without breaking the vacuum, for example, by a high temperature sputtering method under the following conditions. Deposition power DC 10 kW Sputtering pressure 0.4 Pa Substrate heating temperature 500 ° C. Process gas Ar: 100 sccm Deposition rate 0.3 to 0.9 μm / min

The interlayer insulating layer is not only SiO ₂ but also PS.
G, BSG, BPSG, AsSG, silicon nitride film, S
Can be configured from iON, SOG, etc.
It can be formed by the D method. The formation of the opening is
Generally, it can be formed by a photolithography method and a reactive ion etching method.

Although the present invention has been described based on the embodiment in which the contact hole is formed in the impurity diffusion region, the metal plug forming method of the present invention uses the lower wiring layer and the upper wiring layer formed of the wiring material to electrically The present invention can also be applied to formation of so-called via holes for electrically connecting or through holes.

[0036]

As described above, according to the metal plug forming method of the present invention, TiCl ₃ is used as the source gas. TiCl ₃ decomposes at relatively low temperatures, and C
The absolute amount of l is small. Therefore, the TiN layer or the TiON layer can be formed at a lower temperature, and when the TiN layer is formed, the amount of Cl taken into the TiN layer can be reduced.

Further, for example, when an ECR plasma process apparatus for continuously forming a Ti layer and a TiN layer is used, the film forming chamber is heated to a temperature at which TiN does not become particles, so that the number of processed semiconductor substrates increases. Also, the generation of particles is suppressed. Therefore, the maintenance frequency of the ECR plasma process apparatus can be reduced and the throughput can be improved. As a result, highly reliable electronic devices can be manufactured with high yield and high productivity.

[Brief description of drawings]

FIG. 1 is a schematic partial cross-sectional view of a semiconductor element for explaining a part of the steps of the method for forming a metal plug of the present invention.

FIG. 2 is a configuration diagram of an example of an ECR plasma processing apparatus suitable for use in the metal plug forming method of the present invention.

FIG. 3 is a configuration diagram of another example of an ECR plasma processing apparatus suitable for use in the metal plug forming method of the present invention.

FIG. 4 is a schematic partial cross-sectional view of a semiconductor element for showing problems in a conventional metal plug forming technique.

[Explanation of symbols]

 100 Semiconductor Substrate 102 Impurity Diffusion Region 104 Interlayer Insulating Layer 106 Opening 108 Adhesion Layer 110 Ti Layer 112 TiN Layer 114 Metal Layer 116 Void 1,200 Plasma Process Equipment 10, 210, 220 Film Forming Chamber 20 Plasma Chamber 12, 12A Susceptor 16 Gas exhaust part 22 Microwave introduction window 24 Magnetic coil 26 Rectangular wave guide 28 RF power supply 30 Ar gas introduction port 32 Plasma flow 34 RF bias applying device 40, 40A, 42, 42A Gas introduction part 50, 50A Lamp heating means 52 Lamp 230 Gate valve

Claims (1)

[Claims] 1. A step of (a) forming an opening in an interlayer insulating layer formed on a semiconductor substrate, and (b) TiN ₃ as a film-forming source gas using an electron cyclotron resonance plasma CVD method to form TiN. Layer or T
A method of forming a metal plug, comprising: a step of forming an iON layer on the upper surface of an interlayer insulating layer and an opening; and (c) a step of forming a metal material in the opening.