JPH05267096A - High-pressure film capacitor - Google Patents

Abstract

PURPOSE:To wind a film at a fast and constant film feeding speed without using a large facility by using a film having surface roughness within a special range as a dielectric. CONSTITUTION:A first dielectric 12 and a second dielectric 14 are formed on a paper or plastic film having a surface roughness Ra of 0.10-0.18mum. Then, a plurality of first, second electrodes 16, 18 are respectively formed at a predetermined interval on one main surfaces of the dielectrics 12, 14. Further, metal foils 17A, 17B are placed at predetermined positions, and leads 20, 22 are fixed. Thereafter, the dielectrics 12, 14 are so superposed through a third dielectric 24 as to be partly opposed to form a laminate 26. Fourth dielectrics 28 are superposed on and underneath the laminate 26, and this laminate 30 is wound. Thus, it can be wound at faster and constant speed than a maximum film feeding speed to improve productivity without using a large facility.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high voltage film capacitor, and more particularly, for example, a pair of dielectrics, each of which has a plurality of electrodes spaced apart at a predetermined interval, is used as an electrode on one of the dielectrics. The present invention relates to a high-voltage film capacitor formed by superposing and winding so that a part and a part of an adjacent electrode on the other dielectric face each other.

[0002]

2. Description of the Related Art Heretofore, a method disclosed in, for example, Japanese Patent Laid-Open No. 60-89914 has been used to manufacture a high voltage film capacitor of this type. In this method, a pair of electrodes is intermittently contacted with each metal layer of a pair of metallized dielectrics to be transferred, and a current is applied to the metal layer through the pair of electrodes to thereby cause a gap between the pair of electrodes. The metal layer is erased, and the pair of dielectrics are superposed and wound while forming electrodes at predetermined intervals on the dielectric of the pair of metallized dielectrics.

Further, as a manufacturing apparatus of the above method, a pair of electrodes are provided along each of the paths through which a pair of metallized dielectrics are transferred, and a pair of electrodes that can be brought into contact with and separated from the metal layer of the metallized dielectrics. It is provided with a power source connected between the pair of electrodes.

[0004]

However, the film transfer rate must be reduced when removing the metal layer. Therefore, in the above method, the number of speed reductions increases and the productivity decreases in response to the increase in the number of series structures.

FIG. 5 is a graph schematically showing a change in the film transfer speed during winding in the method disclosed in JP-A-60-89914. In addition, in FIG.
The figure shows the winding time of a 0 pF, 3000 pF, and 6000 pF capacitor. Thus, the film transfer rate is reduced during removal of the metal layer. Large capacity 600
In the case of 0 pF, the length of the electrode becomes long, so that the transfer speed can be increased except for the portion where the metal layer is removed. However, such a speed change at the time of winding causes unevenness of winding, which causes deterioration of the capacitor characteristics after winding. On the other hand, when the capacitance is 1500 pF and the capacitance is small, the length of the electrode becomes short, and therefore, in the portion other than the portion where the metal layer is removed, the film must be wound at a low film transfer speed similarly to the portion where the metal layer is removed.

In order to solve these problems, an apparatus provided with a large number of means for removing the metal layer is disclosed in Japanese Patent Laid-Open No. 63-
No. 202906. In this device, a plurality of pairs of electrodes are simultaneously brought into contact with the respective metal layers of the pair of metalized dielectrics to be transferred. Then, by energizing the metal layer through each pair of electrodes, the metal layer between each pair of electrodes is erased, and electrodes are formed at predetermined intervals on each dielectric of the pair of metallized dielectrics. Meanwhile, a pair of dielectrics are superposed and wound. According to this device, a large number of electrodes are formed at the same time, so that the transfer of the metallized dielectric is 1
The speed can be decreased only once, and the other speeds can be increased, and the number of times the transfer speed is decreased for removing the metal layer can be reduced.

However, in the device disclosed in Japanese Patent Laid-Open No. 63-202906, the equipment cost is improved and
There were many problems such as the equipment size being large, and it was not suitable for actual use.

Therefore, the main object of the present invention is to provide a high voltage film capacitor which can be wound at a constant film speed with a high film transfer speed without using large equipment.

[0009]

SUMMARY OF THE INVENTION According to the present invention, a pair of dielectrics, each of which has a plurality of electrodes arranged at a predetermined interval, are provided. In a high-voltage film capacitor that is wound by superposing it so that a part of adjacent electrodes on the body face each other, use of a film having a surface roughness Ra of 0.10 to 0.18 μm as a dielectric. The feature is a high-voltage film capacitor.

[0010]

The dielectric has a surface roughness Ra of 0.10 to 0.
By using a film of 18 μm, the limit value of the transfer rate is increased.

[0011]

According to the present invention, the film can be wound at a constant speed and higher than the conventional maximum film transfer speed. Therefore, it is possible to obtain a high-voltage film capacitor having improved productivity and more stable characteristics without using large equipment.

The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the embodiments below with reference to the drawings.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view showing a developed state of an embodiment of the present invention. This high voltage film capacitor 10
Includes a first dielectric 12 and a second dielectric 14.
The first dielectric 12 and the second dielectric 14 are formed of, for example, paper or plastic film having a surface roughness Ra of 0.10 to 0.18 μm.

A plurality of first electrodes 16 are formed on one main surface of the first dielectric 12 at predetermined intervals. These first electrodes 16 are formed by depositing a metal layer made of a metal such as aluminum on one main surface of the first dielectric 12 by vapor deposition or the like, and a part of the metal layer is separated by a predetermined distance. It is formed by removing.

Also, on one main surface of the second dielectric 14,
A plurality of second electrodes 18 are formed at predetermined intervals. These second electrodes 18 are connected to the second dielectric 14
It is formed by forming a metal layer made of a metal such as aluminum on the one main surface by vapor deposition or the like, and removing a part of the metal layer at a predetermined interval.

A metal foil 17A is formed on the starting end of the first dielectric 12.
And the first lead wire 20 is fixed, and
A metal foil 17B is placed on the end of the dielectric 12 and the second lead wire 22 is fixed.

Then, the dielectric 12 is arranged so that a part of the second electrode 18 on the second dielectric 14 and a part of the adjacent electrode 16 on the dielectric of the first dielectric 12 face each other. And 14
Are stacked via the third dielectric 24 to form a laminated body 26. The high voltage film capacitor 10 is formed by stacking the fourth dielectrics 28 on the upper and lower sides of the laminated body 26 and winding the laminated body 30.

As a result of various studies, the inventor has found that the surface roughness of a film used as a dielectric affects the limit value of the film transfer rate when removing the metal layer provided on the surface. .. Figure 2 shows a transfer speed of 50 mm / sec
It is a graph in which the value of the creeping withstand voltage of the removal portion at that time is 100, and the maximum transfer speed at which a withstand voltage equivalent to this is obtained is the limit value. Films that have been conventionally used for high voltage film capacitors (surface roughness Ra = 0.04 to
At 0.07 μm), the film transfer speed when removing the metal layer on the surface was 50 mm / sec, and the limit value was 70 mm / sec. Here, the surface roughness Ra means the center line average roughness Ra. On the other hand, the film (surface roughness Ra =
0.10 to 0.18 μm), the limit value is 220 mm /
It became sec.

Next, a metallized film having a metal layer formed by vapor deposition on one main surface of several kinds of films having different surface roughnesses is prepared, and the film surface roughness and the transfer of the film capable of removing the metal layer on the surface are prepared. The relationship with the speed limit was investigated. The results are shown in FIG. Here, the surface roughness Ra is 0.20.
When a film having a thickness of μm or more is used, the value of creeping withstand voltage is lowered. It is believed that this is because the metal layer on the metallized film is not sufficiently contacted with the electrode for removing it, and as a result, the metal layer in the concave portion of the film cannot be completely removed and becomes a conduction path. As is clear from FIG. 3, in the high voltage film capacitor, by using a film having a surface roughness Ra of 0.10 to 0.18 μm as a dielectric, the film transfer speed during electrode removal was 220 m.
It can be m / sec and can be wound at a constant speed.

According to the present invention, since the film can be wound faster than the conventional maximum film transfer speed, the productivity is remarkably improved. Furthermore, since it can be wound at a constant speed, a capacitor with more stable characteristics can be obtained.

Needless to say, if a capacitor having the same level of characteristics as the conventional one can be obtained, the transfer can be carried out at a higher speed except for the removal section, so that the productivity can be further improved. FIG. 4 is a graph schematically showing changes in the film transfer speed during winding in the example according to the present invention and the conventional example. As described above, in the embodiment according to the present invention, even if it is wound at a constant speed, it can be wound faster than in the case of the conventional example, which is faster than the transfer except the removal portion. Further, if the parts other than the removing part are transferred faster, the winding can be done faster.

[Brief description of drawings]

FIG. 1 is a sectional view showing a developed state of an embodiment of the present invention.

FIG. 2 is a graph showing a maximum transfer speed at which a withstand voltage equivalent to this is obtained as a limit value, where the value of the withstand voltage of the creeping surface of the removed portion is 100 when the transfer speed is 50 mm / sec.

FIG. 3 is a graph showing the relationship between the film surface roughness and the limit value of the transfer speed of the film capable of removing the metal layer.

FIG. 4 is a graph schematically showing a change in film transport speed during winding of an example according to the present invention and a conventional example.

FIG. 5 is a graph schematically showing a change in film transport speed during winding of a conventional example.

[Explanation of symbols]

 10 High Voltage Film Capacitor 12 First Dielectric 14 Second Dielectric 16 First Electrode 18 Second Electrode 20 First Lead Wire 22 Second Lead Wire

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroyuki Yamada 2 26-10 Tenjin Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd.

Claims (1)

[Claims] 1. A pair of dielectrics, each of which is provided with a plurality of electrodes separated by a predetermined interval, and a part of electrodes on one of the dielectrics and an adjacent electrode on the other dielectric. In a high voltage film capacitor, which is wound so as to be opposed to a part of the above, the surface roughness Ra of the dielectric is 0.10 to 0.18.
A high-voltage film capacitor characterized by using a film of μm.