JP3013590B2 - Manufacturing method of high voltage film capacitor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a high-voltage film capacitor, and more particularly to, for example, a method of forming a pair of dielectrics each having a plurality of electrodes spaced at a predetermined interval. The present invention relates to a method for manufacturing a high-voltage film capacitor in which a part of an electrode and a part of an adjacent electrode on the other dielectric are overlapped and wound so as to face each other.

[0002]

2. Description of the Related Art Hitherto, for manufacturing such a high-voltage film capacitor, for example, a method disclosed in Japanese Patent Application Laid-Open No. 60-89914 has been used. In this method, a pair of electrodes is intermittently brought into contact with each metal layer of a pair of metallized dielectrics to be transferred, and a current is applied to the metal layer through the pair of electrodes, so that a distance between the pair of electrodes is increased. The pair of dielectrics are overlapped and wound while forming the electrodes at predetermined intervals on the pair of metallized dielectrics by erasing the metal layer.

[0003] Further, as a manufacturing apparatus of the above-mentioned method, a pair of electrodes, which are provided along each of the paths through which a pair of metallized dielectrics are conveyed and which can be brought into contact with and separated from a metal layer of the metallized dielectric, are provided. A device provided with a power supply connected between the pair of electrodes is used.

[0004]

However, when removing the metal layer, the film transport speed must be reduced. Therefore, in the above-described method, the number of speed reductions increases in response to the increase in the number of serial structures, and the productivity has decreased.

FIG. 5 is a graph schematically showing a change in film transport speed during winding in the method disclosed in Japanese Patent Application Laid-Open No. 60-89914. Note that FIG.
The values at the time of winding a capacitor of 0 pF, 3000 pF, and 6000 pF are shown. Thus, when the metal layer is removed, the film transfer speed is reduced. Large capacity 600
In the case of 0 pF, since the length of the electrode is long, the transfer speed can be increased in portions other than the portion where the metal layer is removed. However, such a change in speed at the time of winding causes uneven winding and causes deterioration of the capacitor characteristics after winding. On the other hand, in the case of a capacitor having a small capacity of 1500 pF, the length of the electrode becomes short, so that it is necessary to wind the film at a low film transfer speed in a portion other than the portion where the metal layer is removed, similarly to the portion to be removed.

In order to solve these problems, an apparatus provided with a large number of means for removing a metal layer is disclosed in Japanese Patent Application Laid-Open No.
No. 202906. In this apparatus, a plurality of pairs of electrodes are simultaneously brought into contact with respective metal layers of a pair of metallized dielectrics to be transferred. Then, by applying a current to the metal layer through each pair of electrodes, the metal layer between each pair of electrodes is erased, and electrodes are formed at predetermined intervals on each of the pair of metallized dielectrics. Then, a pair of dielectrics are overlapped and wound. According to this apparatus, since a large number of electrodes are formed at the same time, the transfer of the metallized dielectric is performed by only one.
The speed can be increased only by reducing the speed only once, and the number of times the transport speed is reduced for removing the metal layer can be reduced.

However, in the apparatus disclosed in Japanese Patent Application Laid-Open No. 63-202906, the equipment price is improved,
There were many problems such as large equipment size, and it was not suitable for actual use.

SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a method for manufacturing a high-voltage film capacitor which can be wound at a high film transfer speed and at a constant speed without using a large facility.

[0009]

According to the present invention, a surface roughness R
a is formed of a film having a thickness of 0.10 to 0.18 μm.
Forming a metal layer on each of the pair of dielectrics;
Each metal layer on the pair of dielectrics has at least one pair of electrodes.
Contact the poles and energize the metal layer through these electrodes
By erasing the metal layer between the pair of electrodes,
Multiple electrodes are formed on the dielectric at predetermined intervals
The part of the electrode on one dielectric and the other
Overlap so that part of the adjacent electrode on the body faces
Winding the high-pressure film.
This is a method for manufacturing a capacitor . The high-pressure fan according to the present invention
In the method of manufacturing an illuminated capacitor, for example,
A plurality of electrodes are formed at predetermined intervals on each
While overlapping and winding a pair of dielectrics.
Sign. Also, the high-pressure film conditioner according to the present invention.
In a sensor manufacturing method, for example,
Dielectric for forming multiple electrodes at predetermined intervals
Transfer speed of more than 70 mm / sec to 220 mm /
sec or less.

[0010]

The dielectric material has a surface roughness Ra of 0.10-0.
The use of 18 μm film increases the transfer speed limit.

[0011]

According to the present invention, the film can be wound at a constant speed higher than the conventional maximum film transfer speed. For this reason, a high-voltage film capacitor having improved productivity and more stable characteristics can be obtained without using a large facility.

The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.

[0013]

FIG. 1 is a sectional view showing an expanded state of an embodiment of the present invention. This high voltage film capacitor 10
Includes a first dielectric 12 and a second dielectric 14.
The first dielectric 12 and the second dielectric 14 are formed of, for example, paper or a plastic film having a surface roughness Ra of 0.10 to 0.18 μm.

On one main surface of the first dielectric 12, a plurality of first electrodes 16 are formed at predetermined intervals. These first electrodes 16 are formed by depositing a metal layer made of a metal such as aluminum on one main surface of the first dielectric 12 by vapor deposition or the like, and forming a part of the metal layer at a predetermined interval. It is formed by removing.

Also, on one main surface of the second dielectric 14,
A plurality of second electrodes 18 are formed at predetermined intervals. These second electrodes 18 correspond to the second dielectric 14.
Is formed by depositing a metal layer made of a metal such as aluminum on one main surface by vapor deposition or the like, and removing a part of the metal layer at a predetermined interval.

At the beginning of the first dielectric 12, a metal foil 17A is provided.
, The first lead wire 20 is fixed, and the first
A metal foil 17B is placed on the end of the dielectric 12 and the second lead wire 22 is fixed.

Then, the dielectric material 12 is placed such that a part of the second electrode 18 on the second dielectric material 14 and a part of an adjacent electrode 16 on the dielectric material of the first dielectric material 12 face each other. And 14
Are laminated via the third dielectric 24 to form a laminate 26. The high-voltage film capacitor 10 is formed by laminating the fourth dielectric 28 on the upper and lower sides of the laminate 26 and winding the laminate 30.

As a result of various studies, the inventors have found that the surface roughness of a film used as a dielectric affects the limit value of the film transfer speed when removing a metal layer provided on the surface. . Figure 2 shows a transfer speed of 50 mm / sec.
FIG. 9 is a graph showing, as a limit value, a maximum transfer speed at which a withstand voltage equivalent to this value is obtained, with the value of the creepage withstand voltage of the removed portion at the time of (1) being 100. Films conventionally used for high-voltage film capacitors (surface roughness Ra = 0.04 to
0.07 μm), the film transfer speed when removing the metal layer on the surface was 50 mm / sec, and the limit value was 70 mm / sec. Here, the surface roughness Ra refers to the center line average roughness Ra. On the other hand, the film (surface roughness Ra =
0.10 to 0.18 μm), the limit value is 220 mm /
sec.

Next, a metallized film having a metal layer formed by vapor deposition on one main surface of several kinds of films having different surface roughnesses is prepared, and the film surface roughness and the transfer of the film capable of removing the metal layer on the surface are provided. The relationship with the speed limit was investigated. FIG. 3 shows the result. Here, the surface roughness Ra is 0.20
When a film having a thickness of μm or more is used, the value of the creepage withstand voltage is reduced. This is presumably because the metal layer on the metallized film and the electrode for removing the metal layer were not sufficiently contacted with each other, and as a result, the metal layer in the concave portion of the film could not be completely removed, resulting in a conductive path. As is apparent from FIG. 3, in the high-voltage film capacitor, by using a film having a surface roughness Ra of 0.10 to 0.18 μm as the dielectric, the film transfer speed at the time of removing the electrode was 220 m.
m / sec, and can be wound at a constant speed.

According to the present invention, since the film can be wound faster than the conventional maximum film transfer speed, the productivity is remarkably improved. Furthermore, since the coil can be wound at a constant speed, a capacitor having more stable characteristics can be obtained.

Needless to say, if a capacitor having the same level of characteristics as the conventional one is to be obtained, since the parts other than the removal part can be transferred more quickly, the productivity can be further improved. FIG. 4 is a graph schematically showing changes in the film transport speed during winding of the embodiment according to the present invention and the conventional example. As described above, in the embodiment according to the present invention, even if the winding is performed at a constant speed, the winding can be performed faster than the conventional example in which the portion other than the removing unit is transported faster. Furthermore, if the part other than the removal part is transported faster, it can be wound faster.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a developed state of an embodiment of the present invention.

FIG. 2 is a graph showing a creepage withstand voltage of a removed portion at a transfer speed of 50 mm / sec as 100, and a maximum transfer speed at which equivalent withstand voltage is obtained as a limit value.

FIG. 3 is a graph showing a relationship between a film surface roughness and a limit value of a film transfer speed capable of removing a metal layer.

FIG. 4 is a graph schematically showing a change in film transport speed at the time of winding according to an embodiment of the present invention and a conventional example.

FIG. 5 is a graph schematically showing a change in a film transport speed during winding in a conventional example.

[Explanation of symbols]

 Reference Signs List 10 high-voltage film capacitor 12 first dielectric 14 second dielectric 16 first electrode 18 second electrode 20 first lead 22 second lead

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hiroyuki Yamada 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Murata Manufacturing Co., Ltd. (56) References JP-A-2-117119 (JP, A) JP-A-59-6520 (JP, A) JP-A-3-83312 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01G 4/14-4/42

Claims (3)

(57) [Claims] 1. A surface roughness Ra of 0.10 to 0.18 μm
Gold on each of a pair of dielectrics formed of
Forming a metal layer, and forming at least a metal layer on each of the pair of dielectrics.
Also, a pair of electrodes are brought into contact with each other, and the gold
By energizing the metal layer, the metal layer between the pair of electrodes is
Erased, at predetermined intervals on each of the pair of dielectrics
Forming a plurality of electrodes, a part of the electrodes on one of the dielectrics and a part on the other of the dielectrics;
And wound so that some of the adjacent electrodes
A high-pressure film controller.
Manufacturing method of DENSA. 2. The high-pressure film condensate according to claim 1.
In the manufacturing method of the
While forming a plurality of electrodes at regular intervals, a pair of dielectric
High pressure film characterized by overlapping and winding
Manufacturing method of capacitor. 3. A predetermined interval on each of a pair of dielectrics.
The transfer speed of the dielectric when forming a plurality of electrodes by
Faster than 0 mm / sec and below 220 mm / sec
The height according to claim 1 or 2, characterized in that:
Manufacturing method of pressure film capacitor.