JPH05263222A - Collimator for processing thin film and thin film processing device and thin film processing method - Google Patents

Abstract

PURPOSE:To provide the jig which can exactly control the flow of various kinds of materials, such as materials for vapor deposition, sputtered particles and active species for separating and exciting gaseous raw materials for CVD to be used for thin film processing as well as the thin film processing device hating such jig, and the thin film processing method. CONSTITUTION:The jig is the collimator 10 for thin film processing disposed within the thin film processing device for executing the thin film processing in a vacuum or under a reduced pressure and is the collimator which consists of a plastic material and has plural through-holes 12 penetrated in a thickness direction. The thin film processing device has the collimator having such characteristics. Further, this thin film processing method consists in processing the thin films by using the thin film processing device having such characteristics.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a collimator used for thin film processing, a thin film processing apparatus equipped with the collimator, and a thin film processing method using the thin film processing apparatus. Here, the collimator refers to a plate-shaped or film-shaped jig that is used in a thin film processing apparatus that performs thin film processing under vacuum or reduced pressure and has through holes for passing various raw materials for thin film processing. ..

[0002]

2. Description of the Related Art Generally, a thin film processing technique is a thin film forming technique such as a vapor deposition method, a sputtering method or a vapor phase growth method (CVD method) for forming a material containing a metal on various substrates. It can be classified into various dry etching techniques for dry etching a material containing a metal formed on a base material.

With the high integration of semiconductor devices, the dimensional rules in the semiconductor device manufacturing process are becoming finer. Therefore, in the process of forming the internal wiring of the semiconductor device, it is necessary to form a contact hole, a through hole or a via hole (hereinafter collectively referred to as a connection hole) having a small diameter and a large depth, that is, a large aspect ratio. is there. The connection hole is usually formed by providing an opening in an interlayer insulating layer formed on a semiconductor substrate or a lower wiring layer and filling the inside of the opening with a wiring material.

One of the thin film processing techniques for filling the inside of the opening with a wiring material is a sputtering method. However, since the sputtering method generally has a poor step coverage, as the aspect ratio of the opening increases, a disconnection defect is likely to occur in a portion where the wiring material is thin at the bottom of the opening. This poor coverage is due to a so-called shadowing effect that sputtered particles made of the wiring material do not deposit much on the optically shadowed portion formed on the side wall or bottom of the opening. Therefore, a process technology for filling the inside of the opening with a wiring material with good coverage has become indispensable.

Among such process technologies, a so-called high temperature sputtering method, in which an opening is filled with a wiring material by a sputtering method while heating a semiconductor substrate to a high temperature, is considered as a technology closer to practical use at a mass production level. ing. In this high-temperature sputtering method, since the semiconductor substrate is heated to a high temperature, the wiring material deposited in the opening is about 400
It is heated to above ° C and below its melting point. As a result, the softened wiring material becomes in a fluidized state and can flow in the opening. The flow state of the wiring material largely changes depending on the base on which the wiring material is actually deposited.

When a wiring material made of aluminum or an aluminum alloy (hereinafter also simply referred to as aluminum) is used in the high temperature sputtering method, when the base is made of a substance such as titanium (Ti) which easily reacts with aluminum or the like, , Aluminum and the like easily spread over the entire surface of the base while reacting with the base (that is, good wettability). On the other hand, when the base is made of a substance such as SiO ₂ or TiON which is difficult to react with aluminum or the like, the aluminum or the like is rounded to a small size on the surface of the base.

Therefore, the quality of the wettability of the wiring material with respect to the base greatly influences the filling property of the wiring material in the opening. That is, when the wetness is good, the wiring material is
It extends into the opening along the sidewall of the opening. On the other hand, when the wetness is poor, the wiring material is rolled up above the opening and does not spread inside the opening. In fact, for example, in an opening having the same shape and the same aspect ratio under the same conditions, for example, Al-
Be deposited wiring material consisting of 1% Si at a high temperature sputtering, the base within the opening in the wiring material embedded in the well in the case (the side wall surface of the opening portion or the like) is Ti, the SiO ₂ If not embedded well.

The vapor deposition method, which is one of the thin film deposition techniques, heats a heater on which a vapor deposition material is placed or a boat, a crucible or the like containing the vapor deposition material by resistance heating, high frequency heating, electron beam heating or the like to deposit the vapor deposition material. Evaporate and deposit the vapor deposition material on the substrate. Also in this vapor deposition method, obtaining a good step coverage of the vapor deposition material or eliminating the shadowing effect is an important issue.

Another technique for filling the opening with a wiring material with good coverage is a CVD method. Taking a so-called blanket tungsten CVD method as an example, an outline of a low pressure CVD apparatus suitable for this blanket tungsten CVD method is shown in FIG. This CVD apparatus has a CVD reaction chamber 30 provided with a source gas introduction port 32 for introducing a source gas,
In the CVD reaction chamber 30, a shower head 38 for distributing the CVD source gas is provided on the surface of the semiconductor substrate 36 placed on the susceptor 34 as a support. The shower head 38 is made of a ceramic plate having a thickness of 1 to 2 mm in which through holes having a diameter of about 2 mm are randomly provided.

In the blanket tungsten CVD method, the opening 42 is formed in the interlayer insulating layer 40 formed of, for example, SiO ₂ on the semiconductor substrate 36 by photolithography and reactive ion etching. Next, a barrier metal layer 44 made of, for example, Ti / TiN is formed in the interlayer insulating layer 40 and the opening 42,
A tungsten layer 46 is formed on the barrier metal layer by the CVD method.
Are formed (see FIG. 10). Then the tungsten layer 4
By etching back 6, the connection hole in which the wiring material made of tungsten is embedded in the opening 42 is completed.

As a dry etching method for dry etching a material containing a metal formed on a substrate, there are techniques such as a plasma etching method utilizing a chemical reaction and / or a physical reaction, a sputter etching method and an ion beam etching method. is there. In the dry etching method, it is an important issue to accurately process the material formed on the base material into a desired shape.

[0012]

The shadowing effect in the film formation by the sputtering method or the vapor deposition method is due to the fact that the incident angle of the sputtered particles or the vapor deposition material with respect to the substrate is in a large range. By keeping the incident angle within a small range, the shadowing effect can be prevented, the step coverage of the sputtered particles or the vapor deposition material can be improved, and, for example, the sputtered particles can penetrate more into the opening.

When the inside of the opening is filled with the wiring material by the high temperature sputtering method, not only the coverage of the wiring material but also the coverage of the sputtered particle with respect to the base is important when the base on which the sputtered particles are deposited is Ti or TiN. is there. That is, when the step coverage of Ti or TiN is poor, as shown in FIG. 11, the underlayer 52 (for example, Ti of the wiring material 50 made of, for example, aluminum or the like is used.
This is because the wettability with respect to N) is deteriorated, the embedding property of the wiring material is deteriorated, and the void 54 is generated. In FIG. 11, 36 is a semiconductor substrate and 40 is an interlayer insulating layer.

In the conventional CVD apparatus shown in FIG.
Since the directionality of the gas molecules of the source gas is not controlled, there is a problem that voids 48 are generated in the tungsten layer 46 deposited in the opening 42, as shown in FIG. The cause of the voids is the tungsten layer 46.
However, since the growth proceeds from the bottom of the opening and from the sidewalls at substantially the same rate, the aspect ratio of the void to be filled with the tungsten layer in the opening increases as the deposition of the tungsten layer 46 progresses. In order to solve such a problem, it is necessary that the flow of the source gas molecules in the CVD method collide with the substrate to be film-formed uniformly and as vertically as possible.

In the dry etching method, it is necessary to precisely control the flow of excited active species to the substrate in order to etch the material formed on the substrate into a fine desired shape. The etching apparatus does not physically control the directionality of the excited active species.

Accordingly, an object of the present invention is to accurately control the flow of various materials used for thin film processing (hereinafter, also simply referred to as thin film processing raw materials) such as vapor deposition materials, sputtered particles, CVD source gas separation, and excited active species. It is to provide a jig that can be maintained and is easy to maintain.

Another object of the present invention is to provide a thin film processing apparatus provided with a jig for controlling the flow of various thin film processing raw materials used for thin film processing, and a thin film processing method.

[0018]

A jig of the present invention for achieving the above object is a thin film processing collimator arranged in a thin film processing apparatus for processing a thin film under vacuum or reduced pressure. It is realized by a collimator, which is made of a plastic material and has a plurality of through-holes penetrating in the thickness direction for passing a raw material for thin film processing.

In a preferred embodiment of the collimator of the present invention, the plastic material comprises a flexible plastic material that can be wound into a roll.

Alternatively, according to another preferred embodiment of the collimator of the present invention, the collimator comprises a plurality of collimators, and the plurality of collimators are arranged to be exchangeable with respect to the flow of the raw material for thin film processing. Has been done.

In a further preferred embodiment of the collimator of the present invention, the through holes are regularly arranged. In this case, the through holes may be arranged concentrically, or may be arranged on a ridge of a polygon such as a triangle, a quadrangle, or a hexagon, a regular polygon, or a parallelogram.

The shape of the through-hole of the collimator may be a polygonal column, a cylinder, a truncated polygonal pyramid, or a truncated cone, or the cross-sectional shape of the through-hole in the thickness direction of the collimator is stepwise. You can also In the shape of these through holes, the opening area of the through hole on the side of the collimator facing the substrate on which the thin film is to be formed is equal to or smaller than the opening area of the through hole on the opposite side. The opening area of the through hole can be changed according to the position provided on the collimator. Further, even if the axis of the through hole is perpendicular to the surface of the collimator, the angle with respect to the surface of the collimator can be appropriately changed according to the position provided on the collimator.

When the cross-sectional shape of the through hole in the thickness direction of the collimator is stepwise, the number of treads may be one or more. The riser may be vertical or inclined. The position of the tread portion on the side wall of the through hole, the number of tread portions, and the height (length) of the raised portion can be determined by conducting appropriate experiments so that the through hole is less likely to be blocked by the thin film processing raw material. The cross section of the through hole when the through hole is cut along a plane perpendicular to the axis of the through hole may be a circle, a polygon, or a regular polygon.

The aspect ratio of the through hole can be appropriately selected depending on the conditions for processing the thin film. The aspect ratio of the through hole is defined as follows. A plane that passes through the axis of the through hole is assumed, and a plane Pmax is set so that the sectional area of the through hole cut by this plane becomes maximum. The cross-sections of the through holes cut by the plane Pmax are illustrated in FIGS. 5A, 5B and 5C. In FIG. 5, the broken line represents the axis of the through hole. Among the straight lines that contact the side walls of the through holes on both sides of the axis, the straight line that maximizes the included angle (acute angle) that intersects the axis is Lmax. When the angle between the axis and the straight line Lmax is γ, the aspect ratio is defined by the following formula. Aspect ratio = cot (γ) In FIG. 5, 10 is a collimator and 12 is a through hole.

When the collimator of the present invention having a through hole having a stepwise cross section in the thickness direction of the collimator is used in a sputtering apparatus or a vacuum vapor deposition apparatus and the opening is filled with a thin film processing raw material, For example, 0.4
When the aspect ratio of the opening having a diameter of μm is 2, it is preferable that the aspect ratio of the through hole is also around 2.

When a thin film is processed by using the collimator of the present invention in which the shape of the through hole is a polygonal column, a cylinder, a truncated polygonal pyramid, or a truncated cone, when processing a thin film, the plane Pmax is used. The length of the portion corresponding to the side wall in the cross section of the cut-out through hole can be equal to or longer than the mean free path of the thin film processing raw material.

When a thin film is processed by using the collimator of the present invention in which the shape of the through hole is stepwise in a CVD apparatus or a dry etching apparatus, in the cross section of the through hole cut by the plane Pmax, the side wall is formed. Of the corresponding portions, the length of the riser portion closest to the base material is preferably equal to or longer than the mean free path of the thin film processing raw material.

The collimator is made of a plastic material. The plastic material is not particularly limited, and a thermosetting resin or a thermoplastic resin can be used. Examples of the thermosetting resin include epoxy resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, alkyd resin, urethane resin, and polyimide resin. Also, as a thermoplastic resin,
Polyolefin resin, polystyrene resin, ABS resin,
Not only so-called general-purpose plastics exemplified by AS resin, PVC resin, methacrylic resin, fluorine-containing resin, etc. but also nylon resin, saturated polyester resin, polycarbonate resin, polyacrylate resin, polyacetal resin, polysulfone resin, modified polyphenylene ether resin. Engineering plastics exemplified by the above can also be used. The collimator is made of these resins processed into a plate shape. Alternatively, in a preferred embodiment, a collimator can be produced by appropriately selecting a flexible material that can be wound into a roll from the above plastic materials. If desired, materials obtained by blending these resins with a fiber reinforcing material, a filler, a stabilizer and the like can also be used.

The through hole of the collimator has a collimator made of a plate-shaped or film-shaped plastic material,
It can be formed by performing a punching process such as a drilling process, a punching process, or an etching process. Alternatively, the through holes can be formed in the collimator at the same time as the plate-shaped or film-shaped collimator is manufactured by various molding techniques such as transfer molding, compression molding, and injection molding. Furthermore, the through holes can be formed at the same time when the plastic material is formed on the film. Also, having a predetermined thickness, triangle, square, rectangle, parallelogram,
A collimator can also be manufactured by joining a plurality of hollow cells having a shape such as a regular hexagon into a honeycomb shape by using an adhesive or a heat welding technique. In a preferred embodiment of the present invention, the above honeycomb-shaped hollow cells are manufactured from a flexible plastic material and wound into a roll. Alternatively, it is also possible to manufacture a collimator having a through hole by joining pipes having a predetermined length and having various through hole shapes to the perforated film.

The effective area of the collimator is appropriately determined depending on the size of the base material to be processed into a thin film.

Further, the thin film processing apparatus of the present invention comprises the collimator of the present invention having the above characteristics. Furthermore,
The thin film processing method of the present invention is characterized by processing a thin film by using the thin film processing apparatus of the present invention having the above characteristics.

As the thin film processing apparatus, various vacuum vapor deposition apparatuses, sputtering apparatuses, CVD apparatuses, and dry etching apparatuses can be mentioned.

The vacuum vapor deposition apparatus comprises, in addition to the collimator of the present invention, a wire for carrying the vapor deposition material or a boat and a crucible for containing the vapor deposition material, and a resistance heating means, a high frequency heating means or an electron beam heating means. As the sputtering device, a two-electrode sputtering device, a three-electrode or four-electrode sputtering device, a magnetron sputtering device, a high-frequency sputtering device, a reactive sputtering device, a bias sputtering device, an asymmetrical AC sputtering device, a getter sputtering device, which is equipped with the collimator of the present invention. A device etc. can be mentioned. Further, examples of the CVD apparatus include a low pressure CVD apparatus, a plasma CVD apparatus, a photo CVD apparatus, etc., which are equipped with the collimator of the present invention. Furthermore, as a dry etching apparatus, a cylindrical type equipped with the collimator of the present invention,
Examples include parallel plate type and ion beam type dry etching devices.

When the collimator is composed of a plurality of collimators, the thin film processing apparatus is provided with a collimator exchange section, and this collimator exchange section communicates between the inside of the thin film processing apparatus and the collimator exchange section. It is preferable to provide a sealing means capable of blocking. The plurality of collimators can be attached to, for example, a collimator attaching device that includes a rotating shaft and a collimator attaching portion that extends radially from the rotating shaft. Alternatively, when the collimator is composed of a plurality of collimators, each of the plurality of collimators may be a disc-shaped plate in which each collimator is arranged at a predetermined position.

As a thin film forming method, a vacuum vapor deposition method, a sputtering method, a CV method using the above-mentioned various thin film processing apparatuses is used.
Examples of the method include the D method and the dry etching method. Examples of the sputtering method include a two-electrode sputtering method, a three-electrode or four-electrode sputtering method, a magnetron sputtering method, a high-frequency sputtering method, a reactive sputtering method, a bias sputtering method, an asymmetrical AC sputtering method, and a getter sputtering method. In addition, as the CVD method, reduced pressure C
A VD method, a plasma CVD method, a photo CVD method, etc. can be mentioned. Further, examples of the dry etching method include an excited gas etching method, a plasma etching method, a reactive ion etching method, a sputter etching method, a reactive ion beam etching method, and an ion beam sputter etching method. it can.

[0036]

In the collimator of the present invention, the material itself is made of an inexpensive plastic material, and the cost of forming the through hole is also low. Therefore, when the through hole is clogged, the collimator may be discarded and replaced with a new collimator. Therefore, it does not take a long time to regenerate the through holes, and maintenance is easy.

In a preferred embodiment of the collimator of the present invention, the plastic material comprises a flexible plastic material that can be wound into a roll. Therefore, when the through hole of the collimator is clogged, the collimator at this portion may be wound up and thin film processing may be performed using a new portion, which makes maintenance easier.

[0038]

【Example】

(Embodiment 1) FIG. 1A shows a plan view of a collimator of the present invention, and FIG. 1B shows a sectional view. In the collimator 10 of the present invention, a plurality of through holes 12 are regularly arranged. The arrangement state of the through holes 12 was a regular hexagon. The collimator 10 was produced by joining a plurality of regular hexagonal hollow honeycombs made of polycarbonate resin, the perspective view of which is shown in FIG. The diameter of the circumscribed circle of the honeycomb is 9.53 m.
m (3/8 inch) and height is 12.7 mm (1/2 inch). When sputtering an 8-inch semiconductor wafer, a collimator having a diameter of about 12 inches was used. The aspect ratio of the through hole is 1.33.

FIG. 3 shows an outline of a sputtering apparatus 20 using the collimator shown in FIGS. 1 and 2. In FIG. 3, 10 is a collimator, 22 is a target made of, for example, Ti, 24 is a base material on which a thin film is to be formed, and 26 is a heater block for heating the base material. In the thin film processing raw material such as sputtered particles, the thin film processing raw material which enters the through hole 12 of the collimator 10 at an angle larger than the angle γ shown in FIG. 5A is shielded by the collimator 10 and reaches the base material 24. do not do. As a result, the incident angle of the thin film processing raw material with respect to the base material is limited to a certain angle range around the normal line of the base material, that is, 0 to γ degrees. As a result, it is possible to improve the coverage.

As shown in FIG. 3, a multi-chamber type single-wafer sputtering apparatus is used, and as shown in FIG. 3, a sputtering target 22 made of titanium (Ti) and a semiconductor substrate 24 are provided between the sputtering target 22 and the semiconductor substrate 24.
The Ti film was formed under the following conditions by installing the collimator shown in FIG. Based on the conventional method, an interlayer insulating layer made of, for example, SiO ₂ is deposited on the semiconductor substrate having the impurity diffusion regions by a CVD method, and the interlayer insulating layer is formed by a photolithography method and a reactive ion etching method. The opening is formed by. The Ti film formation conditions were such that a titanium thin film with a thickness of 5 nm or more was formed on the sidewall of the opening formed in the interlayer insulating layer. Deposition power 4 kW Sputtering pressure 0.4 Pa Substrate heating temperature 150 ° C. Process gas Ar: 100 sccm Deposition rate 0.03 to 0.1 μm / min Incidentally, the larger the aspect ratio of the through hole of the collimator,
The film forming speed becomes slow.

Thereafter, an aluminum alloy made of Al-1% Si is continuously formed in another chamber without breaking the vacuum according to a high temperature sputtering method under the following conditions. When sputtering this aluminum alloy, a collimator may or may not be provided in the chamber. Even without the provision of a collimator, titanium was well deposited in the opening provided in the interlayer insulating layer with good coverage, so that the aluminum alloy was embedded well. Deposition power 10 kW Sputtering pressure 0.04 Pa Substrate heating temperature 500 ° C. Process gas Ar: 40 sccm Deposition rate 0.3 to 0.9 μm / min

When the opening formed in the interlayer insulating layer has a larger aspect ratio, the aspect ratio of the through hole of the collimator may be increased, and the subsequent filling of the wiring material by the high temperature sputtering method. It will be good.

(Example 2) In Example 2, a collimator wound from a flexible plastic material as shown in FIG. 4 was used. In the collimator 10, a plurality of through holes 12 (not shown in FIG. 4) are regularly arranged. The through holes 12 are arranged in an equilateral triangle. The collimator 10 is made of a polyester film, and has a width of 305 mm and a length of 400 m when an 8-inch semiconductor wafer is sputtered.
The collimator 10 is wound around a winding core 14 and further attached to a winder 16. By rotating this winder 16 by an appropriate driving means (not shown in FIG. 4), a new collimator portion can be used when the through hole is clogged.

It has been confirmed that it is effective to form a TiN layer containing almost no oxygen as a base in order to improve the wettability of the wiring material during the sputtering of the wiring material. Therefore, using the collimator shown in FIG.
A thick film of TiN was formed on the sidewall of the opening formed in the interlayer insulating layer by the sputtering method under the following conditions. Deposition power 5 kW Sputtering pressure 0.4 Pa Substrate heating temperature 150 ° C. Process gas Ar / N ₂ = 40/70 sccm Deposition rate 0.01-0.04 μm / min And continuously in another chamber without breaking the vacuum. Al-1
An aluminum alloy composed of% Si was formed by a high temperature sputtering method under the same conditions as in Example 1.

Also in the method of Example 2, since TiN is formed in the opening with good coverage, the aluminum alloy is well embedded in the opening, and when the through hole of the collimator is clogged, By rotating the winder 16, a new collimator part without clogging can be used, so that the frequency of replacement of the entire collimator can be reduced.

(Embodiment 3) FIG. 7A shows a plan view of a collimator plate 210 having a plurality of collimators 10. In addition, the collimator plate 2 shown in FIG.
1 shows a partial cross-sectional view of a sputtering apparatus 200 including the device 10.
The collimator plate 210 is made of a stainless steel disc, and has three collimator 10 in a predetermined area.
Is provided. In addition, each collimator 10 is provided with a through hole 12. The through holes 12 are regularly arranged on the concentric circumference, and the cross section of the through holes is columnar. There is no limit to the number of collimators. A rotary shaft 220 is attached to the center of the collimator plate 210, and a motor 224 is attached to the rotary shaft 220. The collimator plate 210 can be rotated by a motor 224, and thus the collimator 10 can be exchanged with respect to the thin film processing raw material flow. Reference numeral 202 is a sputter chamber, 226 is a sputter cathode, and 228 is an exhaust port.

(Embodiment 4) A plan view of a collimator device 310 comprising a plurality of collimators different from that shown in FIG. 7A is shown in FIG. 8A. Further, FIG. 8B shows a partial cross-sectional view of a sputtering device 300 including such a collimator device 310. The two collimators 10 are made of stainless steel, and each collimator 10 is provided with a through hole 12 having a hexagonal cross section. The number of collimators may be three or more. Collimator device 3
The central part of 10 is attached to the rotary shaft 320,
A motor 324 is attached to the motor 20. The collimator 10 is attached to a collimator attachment device 322 including a collimator attachment portion that extends radially from the rotation shaft 320.

The sputtering apparatus 300 shown in FIG. 8B.
Further, a collimator exchange section 330 is further provided. The collimator exchange unit 330 is the sputter chamber 3
No. 02 and the collimator exchange unit 330 are provided with sealing means 332, 334 capable of blocking communication. The sealing means 332, 334 has a structure capable of vacuum sealing the collimator 10 by being raised and lowered by a moving mechanism (not shown) when the collimator 10 reaches the position shown in FIG. 8B. Thus, collimator 1
0 is vacuum-sealed by the sealing means 332 and 334 to cut off the communication between the collimator exchange section 330 and the sputtering chamber 302, and then only the collimator exchange section 330 is opened to the atmosphere, and an exchange door (not shown) is opened. Replace the blocked collimator. After that, the collimator exchange section 330 is evacuated, and the sealing means 332, 334
Down and up. As a result, the sputtering chamber 3
Since the clogged collimator can be replaced without exposing 02 to the atmosphere, the vacuum evacuation time after replacement of the shield plate can be significantly shortened.

Although the present invention has been described based on the preferred embodiments, the present invention is not limited to these embodiments. The size, material, thickness, and various parameters of the through hole of the collimator can be appropriately changed to those suitable for the apparatus and method used. For example, in FIG.
Instead of the collimator shown in FIG. 6, it is possible to use a collimator in which through holes having a cylindrical cross section are arranged on the circumference, as shown in a plan view in FIG. When the thin film processing apparatus of the present invention is a vacuum vapor deposition apparatus, the collimator of the present invention may be provided between the vapor deposition material source and the substrate on which the vapor deposition material is adhered. When the thin film processing apparatus of the present invention is composed of various types of CVD apparatus or dry etching apparatus, the collimator of the present invention may be provided above the substrate to be thin film processed. For example, the reduced pressure CV shown in FIG.
In the D device, the collimator of the present invention may be used instead of the shower head 38.

[0050]

In the collimator, the thin film processing apparatus and the thin film processing method of the present invention, since the flow of the thin film processing raw material can be accurately controlled, (A) shadowing in film formation by the sputtering method or the vapor deposition method It is possible to obtain the effect prevention, excellent step coverage, (B) excellent film formability in various CVD methods, and (C) excellent fine workability in dry etching methods. Further, in the collimator of the present invention, when the through hole of the collimator is clogged, the collimator may be discarded, there is no need to perform a regeneration process, maintenance is easy, and a thin film with high productivity is obtained. Processing can be performed.

Further, in a preferred embodiment of the collimator of the present invention, since it is made of a flexible plastic material which can be wound into a roll, it is possible to easily replace the clogged collimator portion with a new collimator portion. Can be replaced, which makes maintenance easier. Furthermore, in another preferred embodiment of the collimator of the present invention, if the through hole becomes clogged, it can be easily replaced with a new collimator.

[Brief description of drawings]

FIG. 1 is a plan view and a sectional view of an embodiment of a collimator of the present invention.

FIG. 2 is a perspective view of a regular hexagonal hollow honeycomb forming the collimator of the present invention.

FIG. 3 is a diagram showing an outline of a thin film processing apparatus of the present invention.

FIG. 4 is a perspective view of another embodiment of the collimator of the present invention.

FIG. 5 is a view showing a cross section of a through hole of a collimator.

FIG. 6 is a plan view of yet another embodiment of the collimator of the present invention.

FIG. 7 is a plan view of yet another embodiment of the collimator of the present invention and a schematic cross-sectional view of a thin film processing apparatus.

FIG. 8 is a plan view of yet another embodiment of the collimator of the present invention and a schematic cross-sectional view of a thin film processing apparatus.

FIG. 9 is a diagram showing an outline of a conventional low pressure CVD apparatus.

FIG. 10 is a schematic partial cross-sectional view of a semiconductor element for explaining a method of forming a connection hole by a conventional blanket tungsten CVD method.

FIG. 11 is a diagram showing a problem caused by a conventional sputtering method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Collimator 12 Through hole 14 Winding core 16 Winder 20 Sputtering device 22 Target 24 Substrate on which a thin film is to be formed 26 Heater block 30 CVD reaction chamber 32 Raw material gas inlet 34 Susceptor 36 Semiconductor substrate 38 Showerhead 40 Interlayer insulating layer 42 Opening 44 Barrier metal layer 46 Tungsten layer 48 Void 50 Wiring material 52 Underlayer 54 Void 200,300 Sputtering device 202,302 Sputtering chamber 210 Collimator plate 220,320 Rotating shaft 224,324 Motor 310 Collimator device 322 Collimator mounting device 330 Collimator exchange section 332, 334 Sealing means

Claims (5)

[Claims] 1. A collimator for thin film processing arranged in a thin film processing apparatus for performing thin film processing under vacuum or reduced pressure, which is made of a plastic material and has a thickness for allowing a raw material for thin film processing to pass therethrough. A collimator used for thin film processing, which has a plurality of through holes penetrating in a direction. 2. The collimator according to claim 1, wherein the plastic material is a flexible plastic material that can be wound into a roll. 3. The collimator comprises a plurality of collimators, and the plurality of collimators are arranged so as to be exchangeable with respect to the flow of the raw material for thin film processing. Collimator. 4. A thin film processing apparatus equipped with the collimator according to any one of claims 1 to 3. 5. A thin film processing method, wherein a thin film is processed by using the thin film processing apparatus according to claim 4.