JPH05260644A - Semiconductor switch damage detection device - Google Patents
Semiconductor switch damage detection deviceInfo
- Publication number
- JPH05260644A JPH05260644A JP5109092A JP5109092A JPH05260644A JP H05260644 A JPH05260644 A JP H05260644A JP 5109092 A JP5109092 A JP 5109092A JP 5109092 A JP5109092 A JP 5109092A JP H05260644 A JPH05260644 A JP H05260644A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor switch
- switch element
- current
- temperature
- temperature rise
- Prior art date
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、サイリスタ,GTO等
の半導体スイッチ素子を使用した半導体スイッチに係る
ものであり、特に、半導体スイッチ素子の導通方向の破
損を検出する半導体スイッチ破損検出装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor switch using a semiconductor switch element such as a thyristor and a GTO, and more particularly to a semiconductor switch breakage detecting device for detecting breakage in the conduction direction of the semiconductor switch element. Is.
【0002】[0002]
【従来の技術】従来、サイリスタ,GTO等の半導体ス
イッチ素子を使用した半導体スイッチにおいては、半導
体スイッチ素子が導通(順)方向において破損した場
合、これを検出する方法としては、図3に示すような導
通方向の電圧降下を検出して行なうものがあつた。2. Description of the Related Art Conventionally, in a semiconductor switch using a semiconductor switch element such as a thyristor or GTO, when the semiconductor switch element is damaged in the conduction (forward) direction, a method for detecting this is as shown in FIG. There is one that detects a voltage drop in a different conduction direction.
【0003】[0003]
【発明が解決しようとする課題】ところが、サイリス
タ,GTO等の半導体スイッチ素子において、そのアノ
ード・カソード端子間電圧は、オン時は数ボルトである
のに対し、オフ時は数百〜数キロボルトであり、また、
導通方向における破損時は略零ボルトとなる。このよう
に、半導体スイッチ素子の端子間電圧は、そのオン時と
オフ時の電圧差が非常に大きい反面、正常時と異常(破
損)時の電圧差は非常に小さい。However, in a semiconductor switching device such as a thyristor or GTO, the voltage between its anode and cathode terminals is several volts when it is on, whereas it is several hundred to several kilovolts when it is off. Yes, again
When it is broken in the conduction direction, the voltage is almost zero. As described above, the voltage difference between the terminals of the semiconductor switch element is very large when it is on and when it is off, whereas it is very small when it is normal and when it is abnormal (damaged).
【0004】このため、従来における異常(破損)検出
は、オフ時の電圧が高いため高耐圧の検出装置が必要と
なると共に、正常時と異常時の電圧差が小さいために高
精度の検出装置を必要とするなど高価となる欠点があっ
た。For this reason, in the conventional abnormality (damage) detection, a high breakdown voltage detection device is required because the voltage at the time of off is high, and a highly accurate detection device is required because the voltage difference between the normal state and the abnormal state is small. There was a drawback that it was expensive and required.
【0005】[0005]
【課題を解決するための手段・作用】本発明は、従来の
欠点を除去し、高精度の半導体スイッチの破損検出装置
を得るためのものであって、基本的には、半導体スイッ
チ素子に流れる電流と半導体スイッチ素子の実温度とを
検出し、その検出量に基づく半導体スイッチ素子の熱損
失(ロス)分を計算して得られる推定される温度上昇値
と、実測された温度上昇値とを比較して、その結果によ
り該半導体スイッチ素子の正常、異常(破損)を判断す
るものである。SUMMARY OF THE INVENTION The present invention is intended to eliminate the drawbacks of the prior art and to obtain a highly accurate damage detection device for a semiconductor switch. Basically, it is applied to a semiconductor switch element. The estimated temperature rise value obtained by detecting the current and the actual temperature of the semiconductor switch element and calculating the heat loss (loss) of the semiconductor switch element based on the detected amount and the actually measured temperature rise value The result of comparison is to judge whether the semiconductor switch element is normal or abnormal (damage) based on the result.
【0006】[0006]
【実施例】本発明を実施例である図1の検出回路装置を
もって説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described with reference to the detection circuit device of FIG. 1 which is an embodiment.
【0007】図1に示す半導体スイッチ破損検出回路に
おいて、1'は逆並列接続された半導体スイッチ素子1か
らなる半導体スイッチ、3は冷却フイン2に取り付けら
れ半導体スイッチ素子1の温度を検出する温度センサ、
5は例えば位相制御回路などのゲート制御装置6からの
制御信号により半導体スイッチ素子1の各ゲートへゲー
ト信号を印加するためのゲート回路、7は半導体スイッ
チ素子1の電流の有無とゲート信号の有無とにより半導
体スイッチ素子1の異常(破損)を判断する判定回路で
ある。9は変流器4によって半導体スイッチ素子1の電
流を検出する電流レベル検出回路、10は温度センサ3と
周囲温度検出センサ8とによって半導体スイッチ素子1
の温度上昇値(ΔT)を検出する実温度上昇値検出回路、
11は電流レベル検出回路9の検出電流(Idet)から平均
電流(Iave)及び電圧降下(ΔV)を推定する電流電圧
推定回路、12は半導体スイッチ素子1の熱損失(ロス)
を算出する損失分演算回路、13は損失分演算回路12から
の損失分から半導体スイッチ素子1の推定温度上昇値
(ΔT')を演算する推定温度上昇値演算回路、14は推定
温度上昇値演算回路13からの出力値ΔT' と実温度上昇
値検出回路10からの出力値 ΔT(T1−T2)とを比較し
て半導体スイッチ素子1がその導通方向で破損している
かどうかを判断する比較回路である。In the semiconductor switch damage detection circuit shown in FIG. 1, 1'is a semiconductor switch composed of semiconductor switch elements 1 connected in antiparallel, and 3 is a temperature sensor attached to a cooling fin 2 for detecting the temperature of the semiconductor switch element 1. ,
Reference numeral 5 is a gate circuit for applying a gate signal to each gate of the semiconductor switch element 1 by a control signal from a gate control device 6 such as a phase control circuit, and 7 is the presence or absence of current in the semiconductor switch element 1 and the presence or absence of a gate signal. Is a determination circuit for determining abnormality (damage) of the semiconductor switch element 1 by Reference numeral 9 is a current level detection circuit for detecting the current of the semiconductor switching element 1 by the current transformer 4, and 10 is the semiconductor switching element 1 by the temperature sensor 3 and the ambient temperature detection sensor 8.
Temperature rise value detection circuit that detects the temperature rise value (ΔT) of
Reference numeral 11 is a current-voltage estimation circuit that estimates the average current (Iave) and the voltage drop (ΔV) from the detection current (Idet) of the current level detection circuit 9, and 12 is the heat loss (loss) of the semiconductor switch element 1.
The loss calculation circuit for calculating the value, 13 is the estimated temperature rise value of the semiconductor switch element 1 from the loss from the loss calculation circuit 12.
An estimated temperature rise value calculation circuit for calculating (ΔT '), 14 compares the output value ΔT' from the estimated temperature rise value calculation circuit 13 with the output value ΔT (T1-T2) from the actual temperature rise value detection circuit 10. A comparison circuit for determining whether or not the semiconductor switch element 1 is damaged in its conduction direction.
【0008】この半導体スイッチ破損検出装置の検出原
理及び動作について説明する。The detection principle and operation of this semiconductor switch damage detection device will be described.
【0009】半導体スイッチ素子1に電流が流れると、
そのアノード・カソード端子間には、正常な場合、数ボ
ルトの電圧降下(素子端子電圧)が生じ、この電圧と導
通電流との積が損失となり熱が発生し半導体スイッチ素
子1の温度が上昇する。このため、通常、半導体スイッ
チ素子1を冷却するために冷却フイン2が使用される。When a current flows through the semiconductor switch element 1,
Normally, a voltage drop of several volts (element terminal voltage) occurs between the anode and cathode terminals, the product of this voltage and the conduction current becomes a loss, heat is generated, and the temperature of the semiconductor switching element 1 rises. .. Therefore, the cooling fins 2 are usually used to cool the semiconductor switching element 1.
【0010】これらの関係は、次式で表わされる。These relationships are expressed by the following equations.
【0011】 ΔΘ=(Rfin)ΔV × Iave ……………………………(1) ΔΘ:温度上昇(熱損失) Rfin:冷却フインの熱抵抗 ΔV:半導体スイッチ素子1の電圧降下 Iave:半導体スイッチ素子1に流れる平均電流 この式から、温度上昇(ΔΘ)を測定すれば、正常時にお
ける平均電流値(Iave)を推定することができるか
ら、この推定平均電流値と実測した実測電流値とを比較
すれば、半導体スイッチ素子1が正常であるか異常(破
損)であるかの判断ができる。本発明は、この原理を用
いて半導体スイッチ素子1の異常(破損)状態を検出す
るものである。ΔΘ = (Rfin) ΔV × Iave (1) ΔΘ: Temperature rise (heat loss) Rfin: Thermal resistance of cooling fins ΔV: Voltage drop of the semiconductor switch element 1 Iave : Average current flowing through the semiconductor switch element 1 From this equation, if the temperature rise (ΔΘ) is measured, the average current value (Iave) in the normal state can be estimated. Therefore, the estimated average current value and the actually measured current By comparing with the value, it is possible to judge whether the semiconductor switch element 1 is normal or abnormal (damaged). The present invention uses this principle to detect an abnormal (damaged) state of the semiconductor switch element 1.
【0012】次に、図1の検出装置の動作を説明する。 「半導体スイッチ素子が正常な場合」半導体スイッチ素
子1にその導通方向に正常に電流が流れると、上記
(1)式に示すように半導体スイッチ素子1の温度が上
昇する。その温度上昇ΔΘは、温度センサ3により検出
される冷却フイン2の温度T1(半導体スイッチ素子1
の温度と略等しい温度)と、周囲温度検出センサ8によ
り検出される周囲温度T2 との差、すなわち、ΔΘ=T
1−T2であり、この温度上昇ΔΘが温度上昇値検出回路
10によって実測温度上昇値ΔTとして得られる。一方、
半導体スイッチ素子1を流れる電流(Idet)を変流器4
を介して電流レベル検出回路9で検出して、検出された
電流値(Idet)から電流電圧推定回路11により平均電流
(Iave )及び図2に示す半導体スイッチ素子の電流-
電圧特性を利用して電圧降下(素子端子電圧)ΔVを推
定し、それらIave 及びΔVから損失分(ΔV×Iav
e)を損失分演算回路12で算出する。そして、温度上昇
値演算回路13において前記損失分に冷却フイン2の熱抵
抗Rfin を掛算することにより、検出した電流値Idet
における推定温度上昇ΔΘ’が推定温度上昇値ΔT'と
して得られる。Next, the operation of the detection device of FIG. 1 will be described. "When the semiconductor switch element is normal" When the current normally flows in the semiconductor switch element 1 in the conduction direction, the temperature of the semiconductor switch element 1 rises as shown in the above formula (1). The temperature rise ΔΘ is the temperature T1 of the cooling fin 2 detected by the temperature sensor 3 (semiconductor switch element 1
Temperature that is substantially equal to the temperature of the above) and the ambient temperature T2 detected by the ambient temperature detection sensor 8, that is, ΔΘ = T
1-T2, and this temperature rise ΔΘ is the temperature rise value detection circuit
It is obtained by 10 as the measured temperature rise value ΔT. on the other hand,
The current (Idet) flowing through the semiconductor switching device 1 is changed to the current transformer 4
The current level detection circuit 9 detects the average current (Iave) from the detected current value (Idet) by the current voltage estimation circuit 11 and the current of the semiconductor switch element shown in FIG.
The voltage drop (element terminal voltage) ΔV is estimated using the voltage characteristics, and the loss component (ΔV × Iav
e) is calculated by the loss calculation circuit 12. Then, the temperature rise value calculation circuit 13 multiplies the loss by the thermal resistance Rfin of the cooling fin 2 to detect the detected current value Idet.
The estimated temperature rise Δθ ′ at is obtained as the estimated temperature rise value ΔT ′.
【0013】比較回路14において、実測温度上昇値ΔT
と推定温度上昇値ΔT' を比較すれば半導体スイッチ素
子1が正常な場合は、ΔT=ΔT' と略同一温度とな
る。In the comparison circuit 14, the measured temperature rise value ΔT
If the semiconductor switch element 1 is normal, the temperature rises to approximately the same temperature as ΔT = ΔT ′.
【0014】「半導体スイッチ素子が異常(破損)な場
合」半導体スイッチ素子1が導通(順)方向に破損した
状態で電流が流れるとき、その半導体スイッチ素子1の
電圧降下は略零ボルトになる。この状態における半導体
スイッチ素子1の損失分は、電圧降下ΔVが略零ボルト
であるため流れる電流値に関係なく略零となるから、冷
却フイン2の温度T1と周囲温度T2とが略等しくなり、
半導体スイッチ素子1に電流(Idet)が流れているにも
かかわらず温度上昇値検出回路10による実測上昇温度値
ΔTも略零となる。"A semiconductor switch element is abnormal (damaged)" When a current flows in a state where the semiconductor switch element 1 is damaged in the conduction (forward) direction, the voltage drop of the semiconductor switch element 1 becomes approximately zero volt. In this state, the loss of the semiconductor switch element 1 becomes substantially zero regardless of the value of the flowing current because the voltage drop ΔV is substantially zero volt, so that the temperature T1 of the cooling fin 2 becomes substantially equal to the ambient temperature T2.
Even though the current (Idet) is flowing through the semiconductor switch element 1, the actually measured temperature rise value ΔT by the temperature rise value detection circuit 10 becomes substantially zero.
【0015】一方、半導体スイッチ素子1には、電流
(Idet)が流れているので温度上昇値演算回路13による
推定上昇温度値ΔT'が、実測上昇温度値ΔTより非常
に大きくなり(ΔT'》 ΔT)、半導体スイッチ素子1
の異常(破損)を判断することができる。On the other hand, the semiconductor switch element 1 has a current
Since (Idet) is flowing, the estimated temperature rise value ΔT ′ by the temperature rise value calculation circuit 13 becomes much larger than the actually measured temperature rise value ΔT (ΔT ′ >> ΔT), and the semiconductor switch element 1
The abnormality (damage) of can be judged.
【0016】以上のように、半導体スイッチ素子1の導
通(順)方向の電圧降下が正常時と異常(破損)時とでそ
の電圧差が小さいのにもかかわらず、その電圧降下(素
子端子電圧)値を利用して正常時と異常時との判別を確
実に行なうことができる。As described above, although the voltage difference in the conduction (forward) direction of the semiconductor switch element 1 is small between the normal state and the abnormal state (damage), the voltage drop (element terminal voltage) is small. The value can be used to reliably distinguish between normal and abnormal.
【0017】更に、図1の検出装置においては、半導体
スイッチ素子1のゲート信号の有無と、半導体スイッチ
素子1に流れている電流(Idet)の有無との関係によ
り、半導体スイッチ素子1の正常異常を判断することが
できる。すなわち、制御装置6からゲート回路への制御
信号によるゲート信号の「有」時に電流「無」で異常、
またゲート信号が「無」時に電流「有」で異常(破損)
が判断できる。Further, in the detection apparatus of FIG. 1, the semiconductor switch element 1 is normally or abnormally based on the relationship between the presence or absence of a gate signal of the semiconductor switch element 1 and the presence or absence of a current (Idet) flowing in the semiconductor switch element 1. Can be judged. That is, when the gate signal by the control signal from the control device 6 to the gate circuit is “present”, the current is “absent” and abnormal.
Also, when the gate signal is "absent", the current is "present" and abnormal (damaged)
Can be judged.
【0018】なお、半導体スイッチ素子1に流れる電流
を、変流器4によりその方向性を検出すれば、逆並列接
続された半導体スイッチ素子1のどちらの素子の異常か
をも判断することができる。If the direction of the current flowing through the semiconductor switching element 1 is detected by the current transformer 4, it is possible to determine which of the semiconductor switching elements 1 connected in anti-parallel is abnormal. ..
【0019】[0019]
【発明の効果】本発明によれば、半導体スイッチ素子の
温度上昇の検出と、半導体スイッチ素子に流れる電流の
検出をするだけで、半導体スイッチ素子の異常状態を確
実に判断することができ、従来の破損検出装置のように
高耐圧、高精度が要求されることのない経済的にも優れ
たものとなる。また、冷却フインの温度を監視すれば、
冷却系統の異常も同時に検出することもできる。According to the present invention, an abnormal state of a semiconductor switch element can be reliably determined only by detecting a temperature rise of the semiconductor switch element and a current flowing through the semiconductor switch element. It is economically superior in that it does not require high withstand voltage and high accuracy like the damage detection device. Also, if you monitor the temperature of the cooling fins,
Abnormalities in the cooling system can also be detected at the same time.
【図1】本発明の半導体スイッチ破損検出装置の実施例
を示すブロック図FIG. 1 is a block diagram showing an embodiment of a semiconductor switch damage detection device of the present invention.
【図2】正常時における半導体スイッチ素子の素子電流
(Iave)と導通方向の電圧降下(ΔV:素子端子電圧)
の関係[Fig. 2] Element current of a semiconductor switching element under normal conditions
(Iave) and voltage drop in conduction direction (ΔV: Element terminal voltage)
connection of
【図3】従来の半導体スイッチ破損検出装置FIG. 3 Conventional semiconductor switch damage detection device
1…半導体スイッチ素子 2…冷却フイン 3…温度センサ 4…変流器(CT) 5…ゲート回路 6…制御回路 7…判定回路 8…周囲温度検出用温度センサ 9…電流レベル検出回路 10…実温度上昇値検出回路 11…電流電圧推定回路 12…損失分演算回路 13…推定温度上昇値演算回路 14…比較回路 1 ... Semiconductor switch element 2 ... Cooling fin 3 ... Temperature sensor 4 ... Current transformer (CT) 5 ... Gate circuit 6 ... Control circuit 7 ... Judgment circuit 8 ... Ambient temperature detection temperature sensor 9 ... Current level detection circuit 10 ... Actual Temperature rise value detection circuit 11 ... Current voltage estimation circuit 12 ... Loss calculation circuit 13 ... Estimated temperature rise value calculation circuit 14 ... Comparison circuit
Claims (2)
チ素子の温度及び半導体スイッチ素子設置周囲温度を検
出して、該半導体スイッチ素子の温度上昇値を検出する
温度上昇値検出回路と、 半導体スイッチ素子に流れる電流を検出し、該検出電流
に基づく半導体スイッチ素子の電流−電圧特性から推定
した半導体スイッチ素子の電圧降下と前記検出電流及び
前期冷却フインの熱抵抗とにより熱損失を算出して該半
導体スイッチ素子の推定温度上昇値を演算する温度上昇
値演算回路と、 前記温度上昇値検出回路からの半導体スイッチ素子の温
度上昇値と前記温度上昇値演算回路からの半導体スイッ
チ素子の推定温度上昇値とを比較して、その比較結果に
より半導体スイッチ素子の正常、異常を判断する比較回
路と、 を備えたことを特徴とする半導体スイッチ破損検出装
置。1. A temperature rise value detection circuit for detecting the temperature rise value of the semiconductor switch element by detecting the temperature of the semiconductor switch element attached to the cooling fin and the ambient temperature of the semiconductor switch element installation, and to the semiconductor switch element. The heat loss is calculated by detecting the flowing current, and calculating the heat loss by the voltage drop of the semiconductor switch element estimated from the current-voltage characteristic of the semiconductor switch element based on the detected current and the detected current and the thermal resistance of the cooling fin in the previous period. A temperature rise value calculation circuit for calculating an estimated temperature rise value of the element; a temperature rise value of the semiconductor switch element from the temperature rise value detection circuit; and an estimated temperature rise value of the semiconductor switch element from the temperature rise value calculation circuit. And a comparison circuit for judging whether the semiconductor switching element is normal or abnormal based on the comparison result. Semiconductor switch damage detection device.
該電流の有無と、半導体スイッチ素子へのゲート信号の
有無とにより半導体スイッチ素子の正常、異常を判断す
る判定回路を備えた請求項1記載の半導体スイッチ破損
検出装置。2. A determination circuit for detecting a current flowing through a semiconductor switch element, and determining whether the semiconductor switch element is normal or abnormal based on the presence or absence of the current and the presence or absence of a gate signal to the semiconductor switch element. Semiconductor switch damage detection device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5109092A JPH05260644A (en) | 1992-03-10 | 1992-03-10 | Semiconductor switch damage detection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5109092A JPH05260644A (en) | 1992-03-10 | 1992-03-10 | Semiconductor switch damage detection device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05260644A true JPH05260644A (en) | 1993-10-08 |
Family
ID=12877120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5109092A Pending JPH05260644A (en) | 1992-03-10 | 1992-03-10 | Semiconductor switch damage detection device |
Country Status (1)
Country | Link |
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JP (1) | JPH05260644A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014027792A (en) * | 2012-07-27 | 2014-02-06 | Toyota Motor Corp | Motor control device |
WO2022224535A1 (en) * | 2021-04-20 | 2022-10-27 | 日立Astemo株式会社 | Electronic control system and electronic control device |
-
1992
- 1992-03-10 JP JP5109092A patent/JPH05260644A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014027792A (en) * | 2012-07-27 | 2014-02-06 | Toyota Motor Corp | Motor control device |
WO2022224535A1 (en) * | 2021-04-20 | 2022-10-27 | 日立Astemo株式会社 | Electronic control system and electronic control device |
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