JPH05260391A - Solid-state image pickup element - Google Patents

Solid-state image pickup element

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Publication number
JPH05260391A
JPH05260391A JP4088130A JP8813092A JPH05260391A JP H05260391 A JPH05260391 A JP H05260391A JP 4088130 A JP4088130 A JP 4088130A JP 8813092 A JP8813092 A JP 8813092A JP H05260391 A JPH05260391 A JP H05260391A
Authority
JP
Japan
Prior art keywords
charge
signal
solid
state image
charges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4088130A
Other languages
Japanese (ja)
Inventor
Naoki Nishi
直樹 西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4088130A priority Critical patent/JPH05260391A/en
Publication of JPH05260391A publication Critical patent/JPH05260391A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain the solid-state image pickup device in which a dynamic range depending on a charge quantity processed by a vertical charge transfer section is expanded without deteriorating a sensor sensitivity. CONSTITUTION:In the still picture use camera system having a mechanical shutter in front of a light receiving section of a CCD solid-state image pickup element 10, a signal charge as to a video image stored in a photosensor 1 is read to a vertical register 3 for plural number of times and the signal voltage based on the signal charge by plural number of times is synthesized by signal processing systems 12, 13, 14. The dynamic range of the CCD solid-state image pickup element 10 depending on the processed charge quantity of the vertical register 3 is expanded.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、固体撮像装置に関し、
特にメカニカルシャッターの如き露光時間を制限する手
段を有する静止画用カメラシステムに用いて好適な固体
撮像装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device,
In particular, the present invention relates to a solid-state image pickup device suitable for use in a still image camera system having a means for limiting the exposure time such as a mechanical shutter.

【0002】[0002]

【従来の技術】図4に、例えばインターライン転送方式
のCCD固体撮像素子の一例の構成を示す。図におい
て、画素単位で2次元配列されて入射光を信号電荷に光
電変換して蓄積するフォトセンサ(受光部)1と、これ
らフォトセンサ1の垂直列毎に配されかつ読出しゲート
2を介して読み出された信号電荷を垂直転送する垂直レ
ジスタ(垂直電荷転送部)3とによって撮像領域4が構
成されている。
2. Description of the Related Art FIG. 4 shows an example of the structure of an interline transfer type CCD solid-state image pickup device. In the figure, photosensors (light receiving portions) 1 which are two-dimensionally arranged in pixel units and photoelectrically convert incident light into signal charges and accumulate the signal charges, and photosensors 1 arranged in each vertical column of the photosensors 1 and through a read gate 2 An imaging region 4 is configured by a vertical register (vertical charge transfer unit) 3 that vertically transfers the read signal charges.

【0003】垂直レジスタ3は、フォトセンサ1から読
み出された信号電荷を1水平走査期間の周期で水平レジ
スタ(水平電荷転送部)5へ転送する。水平レジスタ5
は、垂直レジスタ3から転送された1走査線分の信号電
荷を水平転送する。水平レジスタ5の出力端には、例え
ばフローティング・ディフュージョン・アンプからなる
電荷検出部6が配されており、この電荷検出部6は水平
レジスタ5によって転送された信号電荷を検出して信号
電圧に変換し、各フォトセンサ1に蓄積された信号電荷
に対応した画素信号を時系列的に出力する。
The vertical register 3 transfers the signal charges read from the photosensor 1 to a horizontal register (horizontal charge transfer section) 5 in a cycle of one horizontal scanning period. Horizontal register 5
Horizontally transfers the signal charges for one scanning line transferred from the vertical register 3. At the output end of the horizontal register 5, a charge detection unit 6 composed of, for example, a floating diffusion amplifier is arranged. The charge detection unit 6 detects the signal charge transferred by the horizontal register 5 and converts it into a signal voltage. Then, the pixel signals corresponding to the signal charges accumulated in each photosensor 1 are output in time series.

【0004】かかるCCD固体撮像素子において、その
ダイナミックレンジは垂直レジスタ3(もしくは水平レ
ジスタ5)の取扱い電荷量で決まる。したがって、各転
送レジスタ3,5での取扱い電荷量を超えた信号電荷が
フォトセンサ1から入ってきた場合、正常な転送ができ
ないため、CCD固体撮像素子は正常な画像信号を出力
することができない。
In such a CCD solid-state image pickup device, its dynamic range is determined by the amount of charge handled by the vertical register 3 (or horizontal register 5). Therefore, when a signal charge that exceeds the amount of charge handled in each transfer register 3 and 5 is input from the photo sensor 1, normal transfer cannot be performed, and thus the CCD solid-state image sensor cannot output a normal image signal. ..

【0005】そのため、フォトセンサ1には過剰な電荷
を排出するオーバーフロードレインの構造が設けられて
いる。例えば、縦型オーバーフロードレイン構造をもっ
たフォトセンサでは、センサ部での不純物濃度分布と基
板部に与えられる電圧で垂直方向のオーバーフローバリ
アをコントロールし、センサ部に蓄積することのできる
電荷量を決めている。
For this reason, the photosensor 1 is provided with an overflow drain structure for discharging excess charges. For example, in a photo sensor with a vertical overflow drain structure, the vertical overflow barrier is controlled by the impurity concentration distribution in the sensor section and the voltage applied to the substrate section to determine the amount of charge that can be accumulated in the sensor section. ing.

【0006】この電荷量は、使用範囲最大限の強さの光
がセンサ部に入射しても、垂直レジスタ3の取扱い電荷
量を超えないように設定される。換言すれば、垂直レジ
スタ3にもっと取扱い電荷量があれば、センサ部にはも
っと信号電荷を蓄積することができる。更に言うなら
ば、垂直レジスタ3の取扱い電荷量の制限を受けなけれ
ば、センサ部にはその面積的にいっても、もっと多くの
信号電荷を蓄積できるはずである。
This charge amount is set so as not to exceed the charge amount handled by the vertical register 3 even when light having the maximum intensity in the use range enters the sensor section. In other words, if the vertical register 3 has more charge to be handled, more signal charge can be stored in the sensor unit. Further, if the vertical register 3 is not limited in the amount of electric charges handled, it should be possible to store more signal charges in the sensor section even in terms of its area.

【0007】[0007]

【発明が解決しようとする課題】ところで、現在のCC
D固体撮像素子は、銀板写真などと比べダイナミックレ
ンジが低いことが欠点となっている。特に、静止画の記
録にCCD固体撮像素子を使用した場合、ダイナミック
レンジが低いことは致命的である。ダイナミックレンジ
を大きくするには、垂直レジスタ3の取扱い電荷量を増
やせば良いが、垂直レジスタ3の取扱い電荷量はその幅
に大きく依存し、その幅を拡げることは同時にセンサ開
口部を狭めることとなる。センサ開口部が狭められる
と、フォトセンサ1の感度が低下し、デバイスの特性
上、問題が生ずることになる。
By the way, the present CC
The D solid-state image sensor has a drawback that its dynamic range is lower than that of a silver plate photograph. Especially when a CCD solid-state image sensor is used for recording a still image, the low dynamic range is fatal. To increase the dynamic range, the amount of charge handled by the vertical register 3 may be increased. However, the amount of charge handled by the vertical register 3 largely depends on the width thereof, and widening the width simultaneously narrows the sensor opening. Become. When the sensor opening is narrowed, the sensitivity of the photo sensor 1 is lowered, which causes a problem in device characteristics.

【0008】本発明は、上述した点に鑑みてなされたも
のであり、センサ感度を低下させることなく、垂直電荷
転送部の取扱い電荷量で決まっているダイナミックレン
ジの拡大を可能とした固体撮像装置を提供することを目
的とする。
The present invention has been made in view of the above points, and a solid-state image pickup device capable of expanding the dynamic range determined by the amount of charges handled by the vertical charge transfer section without lowering the sensor sensitivity. The purpose is to provide.

【0009】[0009]

【課題を解決するための手段】本発明による固体撮像装
置は、露光時間を制限する手段を有するカメラシステム
に用いられる固体撮像装置であって、画素単位で2次元
配列された受光部、この受光部に蓄積された信号電荷を
順次転送する電荷転送部及びこの電荷転送部によって転
送されてきた信号電荷を検出して信号電圧に変換する電
荷検出部とを有する固体撮像素子と、受光部に蓄積され
た信号電荷を複数回に分けて電荷転送部に読み出すべく
駆動する駆動回路と、複数回に分けて読み出された各回
の信号電荷に基づく信号電圧を記憶しつつ最終読出しの
信号電荷に基づく信号電圧と合成して撮像出力とする信
号処理回路とを具備している。
A solid-state image pickup device according to the present invention is a solid-state image pickup device used in a camera system having means for limiting an exposure time. A solid-state image sensor having a charge transfer unit for sequentially transferring the signal charges accumulated in the image pickup unit and a charge detection unit for detecting the signal charges transferred by the charge transfer unit and converting the signal charges into a signal voltage; Based on the signal charge of the final read while storing a signal voltage based on the signal charge of each time read in multiple times and a drive circuit that drives the read signal charges to be read out to the charge transfer unit in multiple times. And a signal processing circuit for combining the signal voltage and an image output.

【0010】また、本発明による固体撮像装置は、画素
単位で2次元配列された受光部、この受光部に蓄積され
た信号電荷を順次転送する電荷転送部、この電荷転送部
の途中に設けられて転送されてきた信号電荷を一時的に
蓄積する蓄積部及び電荷転送部によって転送されてきた
信号電荷を検出して信号電圧に変換する電荷検出部とを
有する固体撮像素子と、受光部に蓄積された信号電荷を
複数回に分けて電荷転送部に読み出すとともに、読み出
された各回の信号電荷を蓄積部に蓄積しかつその蓄積電
荷を最終読出しの信号電荷と合成しつつ転送すべく駆動
する駆動回路とを具備している。
Further, the solid-state image pickup device according to the present invention is provided with a light receiving section which is two-dimensionally arranged in pixel units, a charge transfer section for sequentially transferring signal charges accumulated in the light receiving section, and a charge transfer section provided in the middle of the charge transfer section. Stored in the light receiving section, and a solid-state image sensor having a storage section for temporarily storing the signal charge transferred by the charge transfer section and a charge detection section for detecting the signal charge transferred by the charge transfer section and converting the signal charge into a signal voltage. The read signal charge is divided into a plurality of times and read out to the charge transfer section, and the read signal charge of each time is accumulated in the accumulation section and is driven so as to be transferred while being combined with the signal charge of the final read. And a drive circuit.

【0011】[0011]

【作用】メカニカルシャッターの如き露光時間を制限す
る手段を有する静止画用カメラシステムにおいて、固体
撮像素子の受光部個々に蓄積された1つの映像について
の信号電荷を複数回に分けて電荷転送部に読み出し、そ
の複数回分の信号電荷に基づく信号電圧を信号処理系で
合成することで、電荷転送部の取扱い電荷量で決まって
いる固体撮像素子のダイナミックレンジを拡大できる。
しかも、電荷転送部の取扱い電荷量を増やす必要がない
ことから、垂直レジスタの幅に左右されるセンサ開口部
の開口面積を維持できるため、感度の低下を来すことも
ない。
In the still image camera system having a means for limiting the exposure time such as a mechanical shutter, the signal charge for one image accumulated in each light receiving portion of the solid-state image pickup device is divided into a plurality of times to the charge transfer portion. By reading out and synthesizing the signal voltage based on the signal charges of the plurality of times in the signal processing system, the dynamic range of the solid-state imaging device determined by the charge amount handled by the charge transfer unit can be expanded.
In addition, since it is not necessary to increase the amount of charge handled by the charge transfer unit, the opening area of the sensor opening that is influenced by the width of the vertical register can be maintained, and thus the sensitivity is not reduced.

【0012】また、固体撮像素子における電荷転送部の
途中に別の蓄積部を設け、受光部から複数回に分けて読
み出した信号電荷をこの蓄積部に一時的に蓄積し、この
蓄積電荷を最終読出しの信号電荷と合成することで、合
成後の信号電荷の転送部の取扱い電荷量は増やす必要が
あるものの、撮像領域の垂直電荷転送部の取扱い電荷量
はそのままで良いため、センサ感度を低下させることな
く、垂直電荷転送部の取扱い電荷量で決まっている固体
撮像素子のダイナミックレンジを拡大できる。
In addition, another storage section is provided in the middle of the charge transfer section in the solid-state image pickup device, the signal charges read out from the light receiving section in a plurality of times are temporarily stored in this storage section, and the stored charges are finally stored. Although it is necessary to increase the amount of charge handled by the transfer unit of the combined signal charge by combining it with the signal charge for reading, the amount of charge handled by the vertical charge transfer unit in the imaging area can remain the same, thus reducing sensor sensitivity. The dynamic range of the solid-state imaging device, which is determined by the amount of charges handled by the vertical charge transfer unit, can be expanded without performing the above.

【0013】[0013]

【実施例】以下、本発明の実施例を図面に基づいて詳細
に説明する。図1は本発明の一実施例を示す構成図であ
り、露光時間を制限するメカニカルシャッターを有する
静止画用カメラシステムに用いられるインターライン転
送方式CCD固体撮像素子に適用した場合を示す。この
CCD固体撮像素子10は、構成そのものは従来のもの
と何ら変わりはなく、またその受光部前面には先のシャ
ッター(図示せず)が配されている。
Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a configuration diagram showing an embodiment of the present invention, and shows a case where the present invention is applied to an interline transfer type CCD solid-state image sensor used in a still image camera system having a mechanical shutter for limiting an exposure time. The CCD solid-state image pickup device 10 has the same structure as the conventional one, and the front shutter (not shown) is arranged on the front surface of the light receiving portion thereof.

【0014】図において、タイミングジェネレータ7か
らは、垂直レジスタ3を4相駆動するクロックパルスV
φ1 〜Vφ4 や、水平レジスタ5を2相駆動するクロッ
クパルスHφ1 ,Hφ2 等の各種のタイミング信号が発
生される。これら各種タイミング信号のうち、垂直駆動
のための4相のクロックパルスVφ1 〜Vφ4 および水
平駆動のための2相のクロックパルスHφ1 ,Hφ
2 は、駆動回路8を介して垂直レジスタ3および水平レ
ジスタ5にそれぞれ供給される。
In the figure, a timing generator 7 outputs a clock pulse V for driving the vertical register 3 in four phases.
and φ 1 ~Vφ 4, the clock pulses H.phi 1 for driving the horizontal register 5 2 phases, various timing signals such as H.phi 2 is generated. Of these various timing signals, clock pulses H.phi 1 of 2 phases for the clock pulse Vφ 1 ~Vφ 4 and the horizontal drive of the four-phase for vertical driving, H.phi
2 is supplied to the vertical register 3 and the horizontal register 5 via the drive circuit 8, respectively.

【0015】垂直駆動のための4相のクロックパルスV
φ1 〜Vφ4 のうち、第1相のクロックパルスVφ1
第3相のクロックパルスVφ3 は各々、高レベル、中間
レベルおよび低レベルの3値レベルを採り、高レベルの
パルスがフォトセンサ1からの信号電荷の読出しパルス
として用いられる。そして、本発明においては、フォト
センサ1から垂直レジスタ3に1回に読み出す信号電荷
の量を制限し、複数回に分けて読み出すために、その読
出し回数に対応して上記読出しパルスの波高値を段階的
に上げるように駆動回路8でその波高値制御を行う構成
となっている。
Four-phase clock pulse V for vertical driving
Of φ 1 to4 , the first-phase clock pulse Vφ 1 and the third-phase clock pulse Vφ 3 each take three levels of high level, intermediate level, and low level, and the high-level pulse is the photosensor. It is used as a read pulse of the signal charge from 1. Further, in the present invention, the amount of signal charge read from the photosensor 1 to the vertical register 3 at a time is limited, and the peak value of the read pulse is set according to the number of times of reading in order to read the signal charge in a plurality of times. The drive circuit 8 controls the peak value so as to raise it stepwise.

【0016】電荷検出部6の出力信号は、サンプルホー
ルド(S/H)回路11を経た後、A/D変換器12に
よってディジタル化され、複数回の読出しにおいて最終
読出し以前の各信号がメモリ13に記憶される。そし
て、最終読出しによる信号は合成回路14に供給され、
それまでメモリ13に記憶されていた各信号と合成され
ることにより、フォトセンサ1に蓄積された1つの映像
についての信号電荷による画素信号として導出される。
The output signal of the charge detector 6 is digitized by the A / D converter 12 after passing through the sample hold (S / H) circuit 11, and each signal before the final read is read out in the memory 13 in a plurality of readings. Memorized in. Then, the signal from the final read is supplied to the combining circuit 14,
By being combined with each signal stored in the memory 13 up to that point, it is derived as a pixel signal by signal charge for one image accumulated in the photo sensor 1.

【0017】次に、フォトセンサ1に蓄積された信号電
荷を複数回に分けて垂直レジスタ3に読み出す場合の動
作につき、図2に基づいて説明する。先ず、受光部前面
に配されたシャッターが閉じていてCCD固体撮像素子
10には光が当たっていない状態(a)では、フォトセ
ンサ1での光電変換は行われず、したがってフォトセン
サ1には信号電荷は蓄積されない。
Next, the operation when the signal charges accumulated in the photosensor 1 are divided into a plurality of times and read out to the vertical register 3 will be described with reference to FIG. First, in a state (a) in which the shutter arranged on the front surface of the light receiving unit is closed and the CCD solid-state image sensor 10 is not exposed to light, photoelectric conversion is not performed in the photosensor 1, and therefore the photosensor 1 receives a signal. No charge is stored.

【0018】次に、シャッターが開き、CCD固体撮像
素子10の撮像領域に光が照射され始めると同時に、そ
の入射光量に応じた光電変換によってフォトセンサ1に
信号電荷が蓄積され始める(b)。一定の露光時間後シ
ャッターが閉じ、フォトセンサ1内での信号電荷の発生
は終わり、フォトセンサ1内には信号電荷が蓄積されて
いる。このとき、フォトセンサ1内に蓄積されている信
号電荷が、垂直レジスタ3の取扱い電荷量内であれば、
通常のようにフォトセンサ1内の信号電荷を垂直レジス
タ3内に読み出せば良い。
Next, the shutter is opened, and the image pickup area of the CCD solid-state image pickup device 10 starts to be irradiated with light, and at the same time, the signal charge starts to be accumulated in the photosensor 1 by photoelectric conversion according to the incident light amount (b). After a certain exposure time, the shutter is closed, the generation of the signal charge in the photo sensor 1 is finished, and the signal charge is accumulated in the photo sensor 1. At this time, if the signal charge accumulated in the photosensor 1 is within the amount of charge handled by the vertical register 3,
The signal charge in the photo sensor 1 may be read into the vertical register 3 as usual.

【0019】しかし、フォトセンサ1内に蓄積されてい
る信号電荷が垂直レジスタ3の取扱い電荷量よりも多い
場合には、フォトセンサ1内の信号電荷を全ていっぺん
に読み出さず、垂直レジスタ3が充分に転送することが
可能な量(信号電荷の一部)だけ読み出す(b)。この
信号電荷の一部だけをフォトセンサ1から読み出すに
は、先述したように、フォトセンサ1からの信号電荷の
読出しパルス(Vφ1 又はVφ3)の波高値を通常読出し
時よりも低く設定すれば良い。
However, if the signal charge accumulated in the photosensor 1 is larger than the amount of charge handled by the vertical register 3, all the signal charges in the photosensor 1 are not read out at once, and the vertical register 3 is sufficiently discharged. Only the amount (a part of the signal charge) that can be transferred is read (b). In order to read only part of this signal charge from the photosensor 1, as described above, the peak value of the read pulse (Vφ 1 or Vφ 3 ) of the signal charge from the photosensor 1 should be set lower than that during normal reading. Good.

【0020】垂直レジスタ3に読み出された信号電荷の
一部は、通常の転送時と同様にして垂直転送および水平
転送され、電荷検出部6で信号電圧に変換される。この
信号電圧は、サンプルホールド回路11を経た後、A/
D変換器12でディジタル化されてメモリ13に記憶さ
れる。このとき、フォトセンサ1内には、読み残しの信
号電荷が蓄積されている(d)。
A part of the signal charge read out to the vertical register 3 is vertically and horizontally transferred in the same manner as in the normal transfer, and converted into a signal voltage in the charge detection unit 6. This signal voltage, after passing through the sample hold circuit 11, is A /
It is digitized by the D converter 12 and stored in the memory 13. At this time, unread signal charges are accumulated in the photo sensor 1 (d).

【0021】その後、フォトセンサ1内の残りの信号電
荷を垂直レジスタ3に読み出し、上述の場合と同様にし
て読み出した信号電荷を垂直転送および水平転送する。
この信号電荷は、電荷検出部6で信号電圧に変換され、
サンプルホールド回路11およびA/D変換器12を経
た後合成回路14に供給されてメモリ13に記憶されて
いる信号電圧と合成され、フォトセンサ1内に蓄積され
た信号電荷による映像信号として出力される。
After that, the remaining signal charges in the photosensor 1 are read to the vertical register 3, and the read signal charges are vertically and horizontally transferred in the same manner as in the above case.
This signal charge is converted into a signal voltage by the charge detection unit 6,
After passing through the sample hold circuit 11 and the A / D converter 12, the signal voltage is supplied to the combining circuit 14 and is combined with the signal voltage stored in the memory 13, and is output as a video signal by the signal charge accumulated in the photo sensor 1. It

【0022】上述したように、フォトセンサ1に蓄積さ
れた1つの映像についての信号電荷を複数回に分けて垂
直レジスタ3に読み出し、分けて読み出した信号電荷に
基づく信号電圧を信号処理系で合成するようにしたこと
により、垂直レジスタ3の取扱い電荷量で決まっている
CCD固体撮像素子10のダイナミックレンジを拡大で
きる。しかも、垂直レジスタ3の取扱い電荷量を増やす
必要がないことから、垂直レジスタ3の幅に左右される
センサ開口部の開口面積を維持できるため、センサ感度
の低下を来すこともない。
As described above, the signal charges for one image accumulated in the photosensor 1 are read out to the vertical register 3 in plural times, and the signal voltage based on the separately read out signal charges is combined in the signal processing system. By doing so, it is possible to expand the dynamic range of the CCD solid-state imaging device 10 which is determined by the amount of charge handled by the vertical register 3. Moreover, since it is not necessary to increase the amount of charges handled by the vertical register 3, the opening area of the sensor opening that depends on the width of the vertical register 3 can be maintained, and therefore the sensor sensitivity does not decrease.

【0023】なお、本例では、フォトセンサ1内に蓄積
された信号電荷を2回に分けて垂直レジスタ3に読み出
す場合について説明したが、フォトセンサ1に蓄積する
ことが可能な信号電荷の量と垂直レジスタ3の取扱い電
荷量の関係から、フォトセンサ1から垂直レジスタ3へ
の読出しは2回に限らず、3回以上に分けて読み出すよ
うにしても構わない。
In this example, the case where the signal charge accumulated in the photosensor 1 is read out to the vertical register 3 in two times has been described. However, the amount of signal charge that can be accumulated in the photosensor 1 is described. From the relationship between the amount of charge handled by the vertical register 3 and the vertical register 3, the reading from the photosensor 1 to the vertical register 3 is not limited to two times and may be performed in three or more times.

【0024】図3は、本発明の他の実施例を示すCCD
固体撮像素子の構成図である。本実施例においては、フ
ォトセンサ1から垂直レジスタ3に複数回に分けて読み
出した信号電荷を、上記実施例の場合のように信号電圧
に変換後信号処理系で合成するのではなく、垂直レジス
タ3の途中に、撮像領域4の各フォトセンサ1に対応し
て蓄積部15を設けてこの蓄積部15に一時的に蓄積
し、この蓄積電荷を最終読出しの信号電荷と合成する構
成となっている。
FIG. 3 is a CCD showing another embodiment of the present invention.
It is a block diagram of a solid-state image sensor. In the present embodiment, instead of converting the signal charges read out from the photosensor 1 to the vertical register 3 a plurality of times into the signal voltage after being converted into the signal voltage in the signal processing system as in the case of the above embodiment, the vertical register 3 is combined. In the middle of 3, the storage unit 15 is provided corresponding to each photosensor 1 in the imaging region 4, the storage unit 15 is temporarily stored, and the stored charge is combined with the signal charge of the final read. There is.

【0025】この構成によれば、蓄積領域16における
垂直レジスタ3′および水平レジスタ5の各取扱い電荷
量は増やす必要があるものの、撮像領域4の垂直レジス
タ3の取扱い電荷量はそのままで良いため、センサ感度
の低下を来すことなく、CCD固体撮像素子10のダイ
ナミックレンジを拡大できることになる。
According to this structure, although the amount of charge handled in each of the vertical register 3'and the horizontal register 5 in the storage region 16 needs to be increased, the amount of charge handled in the vertical register 3 in the image pickup region 4 can remain unchanged. The dynamic range of the CCD solid-state imaging device 10 can be expanded without lowering the sensor sensitivity.

【0026】なお、上記各実施例においては、インター
ライン転送方式のCCD固体撮像素子に適用した場合に
ついて説明したが、これに限定されるものではなく、本
発明は、フレームインターライン転送方式のCCD固体
撮像素子にも同様に適用可能である。
In each of the above-mentioned embodiments, the case where the invention is applied to the CCD solid-state image pickup device of the interline transfer system has been described. However, the present invention is not limited to this, and the present invention is a CCD of the frame interline transfer system. It is similarly applicable to a solid-state image sensor.

【0027】[0027]

【発明の効果】以上説明したように、本発明によれば、
固体撮像素子の受光部前面にメカニカルシャッターを有
する静止画用カメラシステムにおいて、固体撮像素子の
受光部個々に蓄積された1つの映像についての信号電荷
を複数回に分けて電荷転送部に読み出し、その複数回分
の信号電荷に基づく信号電圧を信号処理系で合成するよ
うにしたことにより、電荷転送部の取扱い電荷量で決ま
っている固体撮像素子のダイナミックレンジを拡大で
き、しかも電荷転送部の取扱い電荷量を増やす必要がな
いことから、垂直レジスタの幅に左右されるセンサ開口
部の開口面積を維持できるため、センサ感度の低下を来
すこともない。
As described above, according to the present invention,
In a still image camera system having a mechanical shutter on the front surface of the light receiving unit of the solid-state image sensor, the signal charges of one image accumulated in each light-receiving unit of the solid-state image sensor are read out to the charge transfer unit in a plurality of times. By combining the signal voltage based on the signal charges of multiple times in the signal processing system, the dynamic range of the solid-state imaging device, which is determined by the charge amount handled by the charge transfer unit, can be expanded, and the charge handled by the charge transfer unit can be expanded. Since it is not necessary to increase the amount, it is possible to maintain the opening area of the sensor opening that depends on the width of the vertical register, and thus the sensor sensitivity does not decrease.

【0028】また、固体撮像素子における電荷転送部の
途中に別の蓄積部を設け、受光部から複数回に分けて読
み出した信号電荷をこの蓄積部に一時的に蓄積し、この
蓄積電荷を最終読出しの信号電荷と合成するようにした
ことにより、合成後の信号電荷の転送部の取扱い電荷量
は増やす必要があるものの、撮像領域の垂直レジスタの
取扱い電荷量はそのままで良いことから、センサ感度の
低下を来すことなく、固体撮像素子のダイナミックレン
ジを拡大できることになる。
Further, another storage section is provided in the middle of the charge transfer section in the solid-state image pickup device, the signal charges read out from the light receiving section in a plurality of times are temporarily stored in this storage section, and the stored charges are finally stored. Since it is necessary to increase the amount of charge handled by the transfer unit of the combined signal charge by combining it with the signal charge for reading, the amount of charge handled by the vertical register in the imaging area can remain the same. Therefore, the dynamic range of the solid-state image pickup device can be expanded without any decrease.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す構成図である。FIG. 1 is a configuration diagram showing an embodiment of the present invention.

【図2】フォトセンサからの信号電荷の読み出し動作を
説明するためのフォトセンサ、読出しゲートおよび垂直
レジスタの断面図である。
FIG. 2 is a cross-sectional view of a photo sensor, a read gate, and a vertical register for explaining a signal charge read operation from the photo sensor.

【図3】本発明の他の実施例を示す構成図である。FIG. 3 is a configuration diagram showing another embodiment of the present invention.

【図4】インターライン転送方式CCD固体撮像素子の
一例の構成図である。
FIG. 4 is a configuration diagram of an example of an interline transfer type CCD solid-state imaging device.

【符号の説明】[Explanation of symbols]

1 フォトセンサ 3 垂直レジスタ 4 撮像領域 5 水平レジスタ 7 タイミングジェネレータ 10 CCD固体撮像素子 12 A/D変換器 13 メモリ 14 合成回路 15 蓄積部 16 蓄積領域 DESCRIPTION OF SYMBOLS 1 Photosensor 3 Vertical register 4 Imaging area 5 Horizontal register 7 Timing generator 10 CCD solid-state imaging device 12 A / D converter 13 Memory 14 Compositing circuit 15 Storage section 16 Storage area

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 露光時間を制限する手段を有するカメラ
システムに用いられる固体撮像装置であって、 画素単位で2次元配列された受光部、前記受光部に蓄積
された信号電荷を順次転送する電荷転送部及び前記電荷
転送部によって転送されてきた信号電荷を検出して信号
電圧に変換する電荷検出部とを有する固体撮像素子と、 前記受光部に蓄積された信号電荷を複数回に分けて前記
電荷転送部に読み出すべく駆動する駆動回路と、 複数回に分けて読み出された各回の信号電荷に基づく信
号電圧を記憶しつつ最終読出しの信号電荷に基づく信号
電圧と合成して撮像出力とする信号処理回路とを具備し
たことを特徴とする固体撮像装置。
1. A solid-state imaging device for use in a camera system having means for limiting an exposure time, comprising: a light-receiving section that is two-dimensionally arranged in pixel units; and a charge that sequentially transfers signal charges accumulated in the light-receiving section. A solid-state imaging device having a transfer section and a charge detection section for detecting the signal charge transferred by the charge transfer section and converting the signal charge into a signal voltage; and dividing the signal charge accumulated in the light receiving section into a plurality of times. A drive circuit that drives the charge transfer unit to read out, and a signal voltage based on the signal charge of each time read out a plurality of times is stored while being combined with the signal voltage based on the signal charge of the final read out to obtain an imaging output. A solid-state imaging device comprising a signal processing circuit.
【請求項2】 露光時間を制限する手段を有するカメラ
システムに用いられる固体撮像装置であって、 画素単位で2次元配列された受光部、前記受光部に蓄積
された信号電荷を順次転送する電荷転送部、前記電荷転
送部の途中に設けられて転送されてきた信号電荷を一時
的に蓄積する蓄積部及び前記電荷転送部によって転送さ
れてきた信号電荷を検出して信号電圧に変換する電荷検
出部とを有する固体撮像素子と、 前記受光部に蓄積された信号電荷を複数回に分けて前記
電荷転送部に読み出すとともに、読み出された各回の信
号電荷を前記蓄積部に蓄積しかつその蓄積電荷を最終読
出しの信号電荷と合成しつつ転送すべく駆動する駆動回
路とを具備したことを特徴とする固体撮像装置。
2. A solid-state imaging device for use in a camera system having means for limiting an exposure time, comprising: a light-receiving section that is two-dimensionally arranged in pixel units, and a charge that sequentially transfers signal charges accumulated in the light-receiving section. A transfer unit, a storage unit provided in the middle of the charge transfer unit for temporarily storing the transferred signal charge, and a charge detection for detecting the signal charge transferred by the charge transfer unit and converting the signal charge into a signal voltage. A solid-state imaging device having a unit, and reading the signal charges accumulated in the light receiving unit into the charge transfer unit in a plurality of times, and accumulating the read signal charges at each time in the accumulation unit and accumulating the accumulated signal charges. A solid-state imaging device comprising: a drive circuit that drives to transfer electric charges while combining the electric charges with signal charges for final reading.
JP4088130A 1992-03-11 1992-03-11 Solid-state image pickup element Pending JPH05260391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4088130A JPH05260391A (en) 1992-03-11 1992-03-11 Solid-state image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4088130A JPH05260391A (en) 1992-03-11 1992-03-11 Solid-state image pickup element

Publications (1)

Publication Number Publication Date
JPH05260391A true JPH05260391A (en) 1993-10-08

Family

ID=13934345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4088130A Pending JPH05260391A (en) 1992-03-11 1992-03-11 Solid-state image pickup element

Country Status (1)

Country Link
JP (1) JPH05260391A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7295241B2 (en) 2001-12-27 2007-11-13 Fujifilm Corporation Image capturing apparatus, image capturing method, and computer-readable medium storing a program for an image capturing apparatus
JP2008099158A (en) * 2006-10-16 2008-04-24 Sony Corp Solid-state imaging apparatus, method of driving solid-state imaging apparatus and imaging apparatus
JP2008131331A (en) * 2006-11-21 2008-06-05 Fujifilm Corp Driving method of solid-state imaging element, and imaging device
JP2010233256A (en) * 2003-06-12 2010-10-14 Eastman Kodak Co Multiple read photodiode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7295241B2 (en) 2001-12-27 2007-11-13 Fujifilm Corporation Image capturing apparatus, image capturing method, and computer-readable medium storing a program for an image capturing apparatus
JP2010233256A (en) * 2003-06-12 2010-10-14 Eastman Kodak Co Multiple read photodiode
JP2008099158A (en) * 2006-10-16 2008-04-24 Sony Corp Solid-state imaging apparatus, method of driving solid-state imaging apparatus and imaging apparatus
JP2008131331A (en) * 2006-11-21 2008-06-05 Fujifilm Corp Driving method of solid-state imaging element, and imaging device

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