JPH05259472A - Ferroelectric thin film element and manufacture thereof - Google Patents
Ferroelectric thin film element and manufacture thereofInfo
- Publication number
- JPH05259472A JPH05259472A JP4091596A JP9159692A JPH05259472A JP H05259472 A JPH05259472 A JP H05259472A JP 4091596 A JP4091596 A JP 4091596A JP 9159692 A JP9159692 A JP 9159692A JP H05259472 A JPH05259472 A JP H05259472A
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- Japan
- Prior art keywords
- thin film
- plzt
- platinum
- substrate
- film element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、圧電材料であるＰＬ
ＺＴを薄膜化した強誘電体薄膜素子とその製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a PL material which is a piezoelectric material.
The present invention relates to a ferroelectric thin film element in which ZT is thinned and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】ＰＬＺＴは、周知の通り、圧電材料であ
るＰＺＴのＰｂの一部をＬａで置換した構造を有する材
料であり、鉛、ランタン、ジルコン、チタンの四元系複
合酸化物であり、大きな電気光学効果を示す強誘電体セ
ラミックスである。従来、このＰＬＺＴは、セラミック
スウエハーとして市販されている。また、サファイアや
マグネシア等の単結晶基板及び白金基板上に、ＰＬＺＴ
の薄膜を形成したものが一部学会等で報告されている。2. Description of the Related Art As is well known, PLZT is a material having a structure in which a part of Pb of PZT, which is a piezoelectric material, is replaced with La, and is a quaternary complex oxide of lead, lanthanum, zircon and titanium. , A ferroelectric ceramic showing a large electro-optical effect. Conventionally, this PLZT is commercially available as a ceramic wafer. In addition, PLZT can be formed on a single crystal substrate such as sapphire or magnesia and a platinum substrate.
Some of the thin films have been reported at academic societies.
【０００３】[0003]
【発明が解決しようとする課題】上記従来の技術のＰＬ
ＺＴウエハーの場合、加工上の制約のため厚さが１００
μｍ程度以下にはできず、電子素子として使用する場
合、駆動電圧が数１００Ｖ以上必要となり、高圧回路を
要し、周辺回路の集積化も困難なものであった。さら
に、大面積で平滑な表面のウエハー状のＰＬＺＴを得る
ことも困難なものであった。The PL of the above-mentioned conventional technique.
In the case of ZT wafer, the thickness is 100 due to processing restrictions.
It cannot be reduced to about μm or less, and when it is used as an electronic element, a driving voltage of several hundreds V or more is required, a high voltage circuit is required, and integration of peripheral circuits is difficult. Further, it is difficult to obtain a wafer-like PLZT having a large area and a smooth surface.
【０００４】また、上記従来の技術の薄膜状のＰＬＺＴ
は、薄膜を形成する基板が非常に高価であり、取扱性が
悪いという問題があった。さらに、白金基板は、高温領
域で変形する恐れがあり、表面の平滑性も悪いという問
題もある。Further, the above-mentioned conventional thin film PLZT is used.
However, there is a problem that the substrate on which the thin film is formed is very expensive and the handleability is poor. Further, the platinum substrate may be deformed in a high temperature region, and there is a problem that the surface smoothness is poor.
【０００５】この発明は上記従来の技術の問題点に鑑み
て成されたもので、安価で取扱性もよく、電子素子とし
ての駆動も容易な強誘電体薄膜素子とその製造方法を提
供することを目的とする。The present invention has been made in view of the above problems of the prior art, and provides a ferroelectric thin film element which is inexpensive, has good handleability, and can be easily driven as an electronic element, and a manufacturing method thereof. With the goal.
【０００６】[0006]
【課題を解決するための手段】この発明は、耐熱性基板
上に、直接に又は、双方に接着性の良い接着層を介して
白金薄膜を形成し、この白金薄膜上にＰＬＺＴ薄膜を形
成した強誘電体薄膜素子である。この耐熱性基板は、石
英ガラス等の耐熱性ガラス基板を用い、白金との接着性
を確保するために、チタン薄膜をこのガラス基板上に形
成してその上に白金薄膜を形成したものである。According to the present invention, a platinum thin film is formed on a heat resistant substrate directly or through an adhesive layer having good adhesiveness on both sides, and a PLZT thin film is formed on this platinum thin film. It is a ferroelectric thin film element. This heat-resistant substrate is formed by using a heat-resistant glass substrate such as quartz glass, a titanium thin film is formed on this glass substrate, and a platinum thin film is formed thereon in order to secure adhesion with platinum. ..
【０００７】またこの発明は、耐熱性基板上に白金薄膜
を形成し、ＰｂＯを少量加えたＰＬＺＴをターゲットに
してスパッタリングを行ない、上記白金薄膜上にＰＬＺ
Ｔ薄膜を形成する強誘電体薄膜素子の製造方法である。
ここで基板温度は、育成される薄膜の結晶構造に大きく
影響するもので、一般にＰＬＺＴは、約５００℃以下で
は、強誘電性を示すペロブスカイト構造とはならず、パ
イロクロア構造を示すようになる。また、基板温度が高
すぎると、Ｐｂの蒸発が多くなり、ＰＬＺＴの組成及び
結晶構造にずれが生じてしまうものである。従ってこの
発明においては、スパッタリング時の耐熱性基板の温度
は、ＰＬＺＴ薄膜がペロブスカイト構造に形成され、Ｐ
ｂの蒸発も少ない温度範囲である４８０〜６８０℃の温
度が適当である。Further, according to the present invention, a platinum thin film is formed on a heat-resistant substrate, and sputtering is performed by using PLZT containing a small amount of PbO as a target to perform PLZ on the platinum thin film.
A method of manufacturing a ferroelectric thin film element for forming a T thin film.
Here, the substrate temperature has a great influence on the crystal structure of the grown thin film, and generally, at about 500 ° C. or less, PLZT does not become a perovskite structure showing ferroelectricity but becomes a pyrochlore structure. On the other hand, if the substrate temperature is too high, the amount of Pb vaporized will increase and the composition and crystal structure of PLZT will shift. Therefore, in the present invention, the temperature of the heat-resistant substrate during sputtering is such that the PLZT thin film is formed in a perovskite structure,
A temperature of 480 to 680 ° C., which is a temperature range in which the evaporation of b is small, is suitable.
【０００８】[0008]
【作用】この発明の強誘電体薄膜素子は、ＰＬＺＴ薄膜
と白金薄膜の格子定数が比較的近く、ＰＬＺＴが低温で
も正確にペロブスカイト構造にエピタキシャル成長する
ものである。また、ＰＬＺＴが薄膜に形成されているの
で、比較的低い電圧で作動させることができ、基板も、
ガラス基板等にすることにより、サファイア等と比べて
大幅にコストを抑えることができるものである。また、
ＰＬＺＴのＰｂは、スパッタリング中に熱により蒸発し
やすいので、ターゲット中のＰＬＺＴに、ＰｂＯを加え
てスパッタリングを行ない、ＰＬＺＴ薄膜の組成のずれ
を抑えようにしたものである。In the ferroelectric thin film element of the present invention, the lattice constants of the PLZT thin film and the platinum thin film are relatively close to each other, and the PLZT epitaxially grows accurately to a perovskite structure even at a low temperature. Further, since PLZT is formed in a thin film, it can be operated at a relatively low voltage, and the substrate can be
By using a glass substrate or the like, the cost can be significantly reduced as compared with sapphire or the like. Also,
Since Pb of PLZT easily evaporates due to heat during sputtering, PbO is added to PLZT in the target to carry out sputtering so as to suppress the deviation of the composition of the PLZT thin film.
【０００９】[0009]
【実施例】以下この発明の一実施例の強誘電体薄膜素子
とその製造方法について、図面に基づいて説明する。こ
の実施例の強誘電体薄膜素子は、図１に示すように、耐
熱性のガラス基板として石英ガラス基板１０上に、チタ
ン（Ｔｉ）薄膜１２が形成され、チタン薄膜１２の上に
白金（Ｐｔ）薄膜１４が形成されている。この白金薄膜
１４の上に、ＰＬＺＴ薄膜１６が形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A ferroelectric thin film element and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to the drawings. As shown in FIG. 1, in the ferroelectric thin film element of this embodiment, a titanium (Ti) thin film 12 is formed on a quartz glass substrate 10 as a heat resistant glass substrate, and platinum (Pt) is formed on the titanium thin film 12. ) A thin film 14 is formed. A PLZT thin film 16 is formed on the platinum thin film 14.
【００１０】この強誘電体薄膜素子の製造方法は、基板
１０上に、ＲＦスパッタ法等により、接着層としてのチ
タン薄膜１２を形成する。このチタン薄膜１２は、数オ
ングストローム程度のの薄い膜で良い。その後、このチ
タン薄膜１２上に、同様にＲＦスパッタ法により、１μ
ｍ以下の白金薄膜１４を形成する。チタン薄膜１２は、
ガラス基板１０及び白金薄膜１４の双方に対しての接着
性が良く、これによって白金薄膜１４が強固にガラス基
板１０上に形成される。そして、白金薄膜１４の表面
に、ＰＬＺＴをスパッタリングする。この時の条件は、
ガラス基板１０の温度は約６２０℃にし、ターゲット
に、ＰｂＯを１０重量％加えてホットプレス成型したＰ
ＬＺＴを用いた。In this ferroelectric thin film element manufacturing method, a titanium thin film 12 as an adhesive layer is formed on a substrate 10 by an RF sputtering method or the like. The titanium thin film 12 may be a thin film having a thickness of about several angstroms. After that, 1 μm was formed on the titanium thin film 12 by the RF sputtering method similarly.
A platinum thin film 14 of m or less is formed. The titanium thin film 12 is
Adhesiveness to both the glass substrate 10 and the platinum thin film 14 is good, so that the platinum thin film 14 is firmly formed on the glass substrate 10. Then, PLZT is sputtered on the surface of the platinum thin film 14. The conditions at this time are
The temperature of the glass substrate 10 was set to about 620 ° C., and 10% by weight of PbO was added to the target to form a hot-pressed P.
LZT was used.
【００１１】この実施例の強誘電体薄膜素子は、白金薄
膜１４上にＰＬＺＴ薄膜１６が形成されているので、比
較的低い温度でＰＬＺＴ薄膜１６のスパッタリングを行
なうことができ、結晶性も良い薄膜が得られる。これ
は、白金とＰＬＺＴの格子定数が比較的近く、格子不整
合が小さいためと考えられる。また、このガラス基板１
０は非常に安価に形成することができ、表面の平滑性も
良い。In the ferroelectric thin film element of this embodiment, since the PLZT thin film 16 is formed on the platinum thin film 14, the PLZT thin film 16 can be sputtered at a relatively low temperature and the thin film has good crystallinity. Is obtained. It is considered that this is because the lattice constants of platinum and PLZT are relatively close to each other and the lattice mismatch is small. Also, this glass substrate 1
0 can be formed very inexpensively and has a good surface smoothness.
【００１２】次にこの実施例の強誘電体薄膜素子の他の
実施例について図２、図３を基にして説明する。ここ
で、上述の実施例と同様の部分は同一符号を付して説明
を省略する。この実施例の強誘電体薄膜素子は、画像メ
モリについてのもので、上述のＰＬＺＴ薄膜１６の表面
に白金の櫛形電極１８が形成されている。櫛形電極１８
は、白金を上記ＰＬＺＴ薄膜１６と同様の条件でＲＦス
パッタ法等によりＰＬＺＴ薄膜１６上に形成され、エッ
チングにより櫛形に形成したものである。この櫛形電極
１８の上に、ＳｉＯ2の薄膜からなる絶縁層２０を、約
０．２５μｍ程度の厚みに形成し、その上に、光導電材
料であるＣｄＳ薄膜２２を、膜厚０．２５μｍ程度でス
パッタリングにより形成する。この時のスパッタリング
条件も上記ＰＬＺＴ薄膜１６と同様の条件である。さら
に、ＣｄＳ薄膜２２の表面に、１μｍ程度のＩＴＯ等の
透明電極２４を同様にスパッタリング等により形成す
る。ＩＴＯの形成時のガラス基板１０の温度は、４５０
℃である。Next, another embodiment of the ferroelectric thin film element of this embodiment will be described with reference to FIGS. Here, the same parts as those in the above-described embodiment are designated by the same reference numerals and the description thereof will be omitted. The ferroelectric thin film element of this embodiment is for an image memory, and the platinum comb-shaped electrode 18 is formed on the surface of the PLZT thin film 16 described above. Comb-shaped electrode 18
Is platinum formed on the PLZT thin film 16 by RF sputtering or the like under the same conditions as the PLZT thin film 16 and formed into a comb shape by etching. An insulating layer 20 made of a thin film of SiO 2 is formed on the comb-shaped electrode 18 to a thickness of about 0.25 μm, and a CdS thin film 22 which is a photoconductive material is formed on the insulating layer 20 to a thickness of about 0.25 μm. Is formed by sputtering. The sputtering conditions at this time are also the same as those for the PLZT thin film 16. Further, a transparent electrode 24 of ITO or the like having a thickness of about 1 μm is similarly formed on the surface of the CdS thin film 22 by sputtering or the like. The temperature of the glass substrate 10 during formation of ITO is 450
℃.
【００１３】この実施例の強誘電体薄膜素子は、白金薄
膜１４の端部に、接続部２６が形成され、透明電極２４
の端部にも、接続部２８が形成されている。接続部２
６，２８間には、ＰＬＺＴ薄膜１２を分極させる電圧を
印加可能な図示しない電源が設けられている。また櫛形
電極１８にも、図示ない他の電源により、分極方向をＰ
ＬＺＴ薄膜１２の表面と平行な方向にそろえるための電
圧を印加可能に形成されている。In the ferroelectric thin film element of this embodiment, a connecting portion 26 is formed at the end of the platinum thin film 14, and the transparent electrode 24 is formed.
A connecting portion 28 is also formed at the end portion of. Connection part 2
A power source (not shown) capable of applying a voltage that polarizes the PLZT thin film 12 is provided between 6 and 28. In addition, the polarization direction of the comb-shaped electrode 18 is set to P by another power source (not shown).
A voltage for aligning in a direction parallel to the surface of the LZT thin film 12 can be applied.
【００１４】この実施例の強誘電体薄膜素子の画像メモ
リは、白金薄膜１４と透明電極２４との間に所定の電圧
をかけ、書き込む画像を露光すると、受光した部分のＣ
ｄＳ薄膜２２が導電性を示し、その下部のＰＬＺＴ薄膜
１６の分極方向が基板面に対して垂直方向に変わる。こ
れによって、書き込む画像の形が、ＰＬＺＴ薄膜１６の
分極方向の違いとなって、ＰＬＺＴ薄膜１６に記録され
る。この書き込み画像を消去する場合は、櫛形電極１８
に電圧をかけることにより、ＰＬＺＴ薄膜１６の分極方
向が水平方向にそろえられ、画像は消える。In the image memory of the ferroelectric thin film element of this embodiment, when a predetermined voltage is applied between the platinum thin film 14 and the transparent electrode 24 and the image to be written is exposed, the C of the light receiving portion is exposed.
The dS thin film 22 exhibits conductivity, and the polarization direction of the PLZT thin film 16 below it changes to the direction perpendicular to the substrate surface. As a result, the shape of the image to be written becomes a difference in the polarization direction of the PLZT thin film 16 and is recorded on the PLZT thin film 16. When erasing this written image, the comb-shaped electrode 18 is used.
When a voltage is applied to the PLZT thin film 16, the polarization direction of the PLZT thin film 16 is aligned in the horizontal direction, and the image disappears.
【００１５】この実施例の強誘電体薄膜素子によれば、
比較的低電圧で、ＰＬＺＴ薄膜１６の駆動が可能であ
り、製造コストも安価なものである。According to the ferroelectric thin film element of this embodiment,
The PLZT thin film 16 can be driven with a relatively low voltage, and the manufacturing cost is low.
【００１６】なお、この発明の強誘電体薄膜素子は、上
記実施例に限定されるものではなく、反射型光シャッタ
ー、反射型光変調器、非接触ひずみ検出器等の分野で利
用できるものである。The ferroelectric thin film element of the present invention is not limited to the above embodiment, but can be used in the fields of a reflection type optical shutter, a reflection type optical modulator, a non-contact strain detector and the like. is there.
【００１７】また、基板は、耐熱性のガラス基板の他、
セラミックス基板や、Ｓｉ基板、又は耐熱性金属基板で
あっても良い。また、基板と白金薄膜との間には、接着
層を設けなくても良く、所定の接着強度が得られれば良
い。The substrate is a heat-resistant glass substrate,
It may be a ceramic substrate, a Si substrate, or a heat resistant metal substrate. Further, an adhesive layer may not be provided between the substrate and the platinum thin film, as long as a predetermined adhesive strength can be obtained.
【００１８】[0018]
【発明の効果】この発明の強誘電体薄膜素子は、耐熱性
基板上に白金薄膜を形成し、この白金薄膜上にＰＬＺＴ
薄膜を形成したので、基板を安価なものにすることがで
き、ＰＬＺＴ薄膜の駆動電圧も比較的低くすることがで
きる。また、基板表面の平滑性や耐熱性も高くすること
ができる。According to the ferroelectric thin film element of the present invention, a platinum thin film is formed on a heat resistant substrate, and PLZT is formed on the platinum thin film.
Since the thin film is formed, the substrate can be made inexpensive and the driving voltage of the PLZT thin film can be made relatively low. Also, the smoothness and heat resistance of the substrate surface can be improved.
【図１】この発明の一実施例の強誘電体薄膜素子の縦断
面図である。FIG. 1 is a vertical sectional view of a ferroelectric thin film element according to an embodiment of the present invention.
【図２】この発明の他の実施例の強誘電体薄膜素子の縦
断面図である。FIG. 2 is a vertical sectional view of a ferroelectric thin film element according to another embodiment of the present invention.
【図３】この実施例の強誘電体薄膜素子の正面図であ
る。FIG. 3 is a front view of a ferroelectric thin film element of this example.
１０ ガラス基板 １２ チタン薄膜 １４ 白金薄膜 １６ ＰＬＺＴ薄膜 10 glass substrate 12 titanium thin film 14 platinum thin film 16 PLZT thin film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 37/02 9276−4Ｍ 49/02 8728−4Ｍ (72)発明者 谷野 克巳 富山県富山市高田383 富山県工業技術セ ンター機械電子研究所内 (72)発明者 玉川 勤 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication location H01L 37/02 9276-4M 49/02 8728-4M (72) Inventor Katsumi Tanino Takada, Toyama City, Toyama Prefecture 383 Toyama Prefectural Industrial Technology Center Mechanical and Electronic Research Laboratory (72) Inventor Tamagawa Taku 3158 Shimookubo, Osawano-cho, Kamishinagawa-gun, Toyama Prefecture Hokuriku Electric Industry Co., Ltd.
Claims (4)
て白金薄膜を形成し、この白金薄膜上にＰＬＺＴ薄膜を
形成したことを特徴とする強誘電体薄膜素子。1. A ferroelectric thin film element, comprising a platinum thin film formed on a heat-resistant substrate directly or via an adhesive layer, and a PLZT thin film formed on the platinum thin film.
あることを特徴とする請求項１記載の強誘電体薄膜素
子。2. The ferroelectric thin film element according to claim 1, wherein the heat resistant substrate is a heat resistant glass substrate.
Ｏを少量混合したＰＬＺＴをターゲットにしてスパッタ
リングを行ない、上記白金薄膜上にＰＬＺＴ薄膜を形成
する強誘電体薄膜素子の製造方法。3. A platinum thin film is formed on a heat resistant substrate to form Pb.
A method of manufacturing a ferroelectric thin film element, wherein PLZT containing a small amount of O is used as a target for sputtering to form a PLZT thin film on the platinum thin film.
℃の温度で、ＰＬＺＴに少量のＰｂＯを加えて成型した
ターゲットを用いてスパッタリングを行ない、上記白金
薄膜上にＰＬＺＴ薄膜を形成する請求項３記載の強誘電
体薄膜素子の製造方法。4. The temperature of the heat resistant substrate is set to 480 to 680.
The method for producing a ferroelectric thin film element according to claim 3, wherein a PLZT thin film is formed on the platinum thin film by performing sputtering at a temperature of ° C using a target formed by adding a small amount of PbO to PLZT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4091596A JPH05259472A (en) | 1992-03-16 | 1992-03-16 | Ferroelectric thin film element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4091596A JPH05259472A (en) | 1992-03-16 | 1992-03-16 | Ferroelectric thin film element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05259472A true JPH05259472A (en) | 1993-10-08 |
Family
ID=14030941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4091596A Pending JPH05259472A (en) | 1992-03-16 | 1992-03-16 | Ferroelectric thin film element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05259472A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614438A (en) * | 1995-03-15 | 1997-03-25 | Radiant Technologies, Inc. | Method for making LSCO stack electrode |
-
1992
- 1992-03-16 JP JP4091596A patent/JPH05259472A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5614438A (en) * | 1995-03-15 | 1997-03-25 | Radiant Technologies, Inc. | Method for making LSCO stack electrode |
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