JPH05256608A - Position detecting device - Google Patents

Position detecting device

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Publication number
JPH05256608A
JPH05256608A JP4057982A JP5798292A JPH05256608A JP H05256608 A JPH05256608 A JP H05256608A JP 4057982 A JP4057982 A JP 4057982A JP 5798292 A JP5798292 A JP 5798292A JP H05256608 A JPH05256608 A JP H05256608A
Authority
JP
Japan
Prior art keywords
output
position detecting
light emitting
turned
detecting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4057982A
Other languages
Japanese (ja)
Inventor
Mitsunori Matsuura
充徳 松浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nidec Shimpo Corp
Original Assignee
Shimpo Industrial Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimpo Industrial Corp filed Critical Shimpo Industrial Corp
Priority to JP4057982A priority Critical patent/JPH05256608A/en
Publication of JPH05256608A publication Critical patent/JPH05256608A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To measure a position with precision even though a dark current fluctuates with temperature change or an output varies corresponding to standard voltage variation by deducting the output of a semiconductor position detecting element when an luminous element is turned off from the output when the luminous element is turned on so as to compute a position signal. CONSTITUTION:When measuring is performed, the digital values of the respective terminal outputs of a semiconductor position detecting element 1, under conditions that a luminous element 2 is not turned on, are read and stored in a memory 9. Almost simultaneously the digital values of the respective terminal outputs of the semiconductor position detecting element 1, under the conditions that the luminous element 2 is turned on, are read and stored in the memory 9. An arithmetic means 8 deducts the terminal output obtained when the luminous element is not turned on from the terminal output obtained when the luminous element is turned on so as to compute a position signal after an arithmetic process such as a normalizing computing. The terminal output, when the luminous element is not turned on, is an output equivalent to a dark current, and the dark current is eliminated by this processing and the variable component of a measured value caused by the variation of a standard voltage is also eliminated. The variation of the measured value, caused by the shift of a luminous center, is not allowed to occur either, since the luminous amount of the luminous element 2 is not controlled so as to increase or decrease.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体位置検出素子
(PSD)を用いた位置検出装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a position detecting device using a semiconductor position detecting element (PSD).

【0002】[0002]

【従来の技術】半導体位置検出素子を用いた位置検出装
置の従来例としては、図5および図6に示すものがあ
る。
2. Description of the Related Art As a conventional position detecting device using a semiconductor position detecting element, there is one shown in FIGS.

【0003】図5に示す従来装置では、半導体位置検出
素子21と、発光ダイオードのような発光素子22とが
対向配置されている。通常は、固定側の部材に半導体位
置検出素子21が取り付けられ、荷重等により変位する
可動側の部材に発光素子22が取り付けられる。発光素
子22の発光は、その前方に設けられたレンズ23もし
くはスリットにより、ピンポイント状に絞られて半導体
位置検出素子21の受光面に照射される。
In the conventional device shown in FIG. 5, a semiconductor position detecting element 21 and a light emitting element 22 such as a light emitting diode are arranged to face each other. Usually, the semiconductor position detecting element 21 is attached to a fixed member, and the light emitting element 22 is attached to a movable member that is displaced by a load or the like. The light emitted from the light emitting element 22 is focused in a pinpoint shape by a lens 23 or a slit provided in front of the light emitting element 22 and applied to the light receiving surface of the semiconductor position detecting element 21.

【0004】半導体位置検出素子21は、その共通電極
にバイアス電圧が印加された状態で、受光面にピンポイ
ント状の光が照射されると、各端部電極からは、照射ス
ポットまでの距離に反比例した量の電流(光電流)
1,I2が流れる。各端部電極からの光電流I1,I
2は、それぞれ電流/電圧変換器24,25により電圧
信号V1,V2に変換される。これら電圧信号V1,V
2は、減算器26に導入されて差信号(V1−V2)が生
成され、この差信号が照射スポットの位置信号として取
り出される。
In the semiconductor position detecting element 21, when the light receiving surface is irradiated with pinpoint light with a bias voltage applied to its common electrode, the distance from each end electrode to the irradiation spot is increased. Inversely proportional amount of current (photocurrent)
I 1 and I 2 flow. Photocurrent I 1 , I from each end electrode
2 is converted into voltage signals V 1 and V 2 by current / voltage converters 24 and 25, respectively. These voltage signals V 1 , V
2 is introduced into the subtractor 26 to generate a difference signal (V 1 −V 2 ), and this difference signal is taken out as a position signal of the irradiation spot.

【0005】また、両電圧信号V1,V2は、加算器27
で互いに加算され、この和信号(V1+V2)が発光ドラ
イバ28に制御信号として入力し、和信号が一定になる
ように発光素子22の発光量が制御される。
Both voltage signals V 1 and V 2 are added to the adder 27.
Are added to each other, and the sum signal (V 1 + V 2 ) is input to the light emission driver 28 as a control signal, and the light emission amount of the light emitting element 22 is controlled so that the sum signal becomes constant.

【0006】なお、この図5の例では、減算器26の出
力である差信号(V1−V2)が位置信号として取り出さ
れるが、一方の電流/電圧変換器24(25)の出力V
1(V2)をそのまま位置信号として取り出すこともあ
る。
In the example of FIG. 5, the difference signal (V 1 -V 2 ) which is the output of the subtractor 26 is taken out as a position signal, but the output V of one current / voltage converter 24 (25) is output.
1 (V 2 ) may be taken out as a position signal as it is.

【0007】図6に示す従来装置では、半導体位置検出
素子21の共通電極側に定電流回路29が設けられてい
る。共通電極には、半導体位置検出素子21の端部出力
である光電流I1,I2の総量(I1+I2)が流れるが、
光電流の総量が変化すると、定電流回路29は、その変
化分に応じた検出信号を出力する。この検出信号は、発
光ドライバ28に制御信号として入力し、半導体位置検
出素子21での光電流の総量が一定になるよう、発光素
子22の発光量が制御される。なお、この例では、一方
の電流/電圧変換器24の出力V1がそのまま位置信号
として取り出される。
In the conventional device shown in FIG. 6, a constant current circuit 29 is provided on the common electrode side of the semiconductor position detecting element 21. Although the total amount (I 1 + I 2 ) of the photocurrents I 1 and I 2 , which are the end output of the semiconductor position detecting element 21, flows through the common electrode,
When the total amount of photocurrent changes, the constant current circuit 29 outputs a detection signal according to the changed amount. This detection signal is input to the light emission driver 28 as a control signal, and the light emission amount of the light emitting element 22 is controlled so that the total amount of photocurrent in the semiconductor position detection element 21 becomes constant. In this example, the output V 1 of one of the current / voltage converters 24 is directly extracted as a position signal.

【0008】[0008]

【発明が解決しようとする課題】ところで、半導体位置
検出素子21の各端部電極から取り出される電流には、
光照射に依存しない暗電流が含まれるのであって、この
暗電流は、主として温度変化に応じて増減する。
By the way, the current extracted from each end electrode of the semiconductor position detecting element 21 is
A dark current that does not depend on light irradiation is included, and the dark current increases or decreases mainly in accordance with temperature changes.

【0009】図5の従来装置の場合、半導体位置検出素
子21の端部出力に含まれる暗電流分は、減算器26に
おいて引算により互いにほぼ相殺されて、位置信号には
ほとんど含まれなくなるが、加算器27においては、暗
電流分が互いに加算される。発光素子22の発光量は、
この暗電流分を含む信号により制御されるのであるか
ら、必要以上に大きく増減変化することになり、半導体
位置検出素子21の出力に、照射スポットの位置変化と
は無関係の変動をもたらし、測定誤差を発生させる。
In the case of the conventional device shown in FIG. 5, the dark current components contained in the end output of the semiconductor position detecting element 21 are canceled by subtraction in the subtractor 26, and are almost not contained in the position signal. In the adder 27, the dark current components are added together. The light emission amount of the light emitting element 22 is
Since the signal is controlled by the signal including the dark current, it is increased or decreased more than necessary, which causes a change in the output of the semiconductor position detecting element 21 that is unrelated to the position change of the irradiation spot, resulting in a measurement error. Generate.

【0010】次に、図6の従来装置では、半導体位置検
出素子21に流れる電流の総量により発光素子22の発
光量を制御するので、前記した暗電流の影響を取り除く
ことができるが、定電流回路29に与えられている基準
電圧が変動すると、半導体位置検出素子21へのバイア
ス電圧も変動し、それに伴って、半導体位置検出素子2
1の出力が変動し、測定誤差をもたらす。
Next, in the conventional device of FIG. 6, since the light emission amount of the light emitting element 22 is controlled by the total amount of current flowing through the semiconductor position detecting element 21, the influence of the dark current described above can be eliminated. When the reference voltage applied to the circuit 29 changes, the bias voltage applied to the semiconductor position detecting element 21 also changes, and accordingly, the semiconductor position detecting element 2 changes.
The output of 1 fluctuates, causing a measurement error.

【0011】また、いずれの従来装置でも用いられる発
光素子22である発光ダイオードには、発光量の増減に
伴い、その発光中心が移動する傾向がある。ここで、各
従来例のように、半導体位置検出素子21の出力で発光
ダイオードの発光量を制御するよう、フィードバックル
ープを形成したものでは、発光ダイオードの発光量が増
減するから、その増減変化に伴い、発光ダイオードの発
光中心が移動し、これが測定誤差を発生させる。
Further, in the light emitting diode which is the light emitting element 22 used in any of the conventional devices, the emission center thereof tends to move as the amount of emitted light increases or decreases. Here, as in each conventional example, in the case where the feedback loop is formed so that the light emission amount of the light emitting diode is controlled by the output of the semiconductor position detection element 21, the light emission amount of the light emitting diode increases or decreases. Along with this, the emission center of the light emitting diode moves, which causes a measurement error.

【0012】本発明は、上記のような従来の問題点に鑑
み、暗電流や、基準電圧の変動、発光素子の発光量増減
に起因する測定誤差を無くし、測定精度を高めることを
課題とする。
In view of the above conventional problems, it is an object of the present invention to eliminate the measurement error caused by the dark current, the fluctuation of the reference voltage, and the increase / decrease of the light emission amount of the light emitting element, and improve the measurement accuracy. ..

【0013】[0013]

【課題を解決するための手段】本発明は、上記の課題を
達成するために、図1の特許請求の範囲対応図に示すよ
うに、半導体位置検出素子と、この半導体位置検出素子
に対向配置された発光素子とを有する位置検出装置にお
いて、半導体位置検出素子の各端部出力をデジタル量に
変換するA/D変換器と、発光素子の非点灯時および点
灯時に半導体位置検出素子の各端部出力をA/D変換器
を介して読み取る読み取り手段と、読み取り手段の読み
取り動作に関連して発光素子の点灯/消灯を切り換える
点灯切換手段と、読み取り手段により読み取られた非点
灯時および点灯時での半導体位置検出素子の各端部出力
を記憶するメモリと、メモリに記憶された点灯時での各
端部出力から非点灯時の各端部出力を差し引いて位置信
号を演算する演算手段とを備えたものである。
In order to achieve the above-mentioned object, the present invention is directed to a semiconductor position detecting element and a semiconductor position detecting element facing each other, as shown in FIG. In the position detecting device having the light emitting element, an A / D converter for converting each end output of the semiconductor position detecting element into a digital amount, and each end of the semiconductor position detecting element when the light emitting element is not lit and when it is lit. Reading means for reading the partial output through the A / D converter, lighting switching means for switching lighting / lighting off of the light emitting element in association with the reading operation of the reading means, and non-lighting and lighting times read by the reading means. A memory that stores the output of each end of the semiconductor position detecting element in the above, and a calculation that calculates the position signal by subtracting the output of each end when the lamp is not lit from the output of each end when the lamp is lit It is that a stage.

【0014】[0014]

【作用】上記構成において、測定時には、発光素子が点
灯しない状態で、半導体位置検出素子の各端部出力のデ
ジタル値が読み取り手段に読み取られて、メモリに記憶
され、それに前後して、発光素子を点灯した状態で、半
導体位置検出素子の各端部出力のデジタル値が読み取ら
れて、メモリに記憶される。演算手段は、発光素子点灯
時に得られた端部出力から非点灯時での端部出力を差し
引いて、正規化演算のような演算処理することにより、
位置信号を算出する。発光素子非点灯時の端部出力は、
暗電流に相当する出力であり、前記の処理で、暗電流分
が取り除かれ、また、基準電圧の変動に起因する測定値
の変動分も取り除かれる。また、発光素子の発光量は増
減制御されないから、発光中心の移動がなく、この発光
中心の移動による測定値の変動も発生しない。
In the above structure, the digital value of the output of each end of the semiconductor position detecting element is read by the reading means and stored in the memory while the light emitting element is not lit at the time of measurement. In the state where is turned on, the digital value of each end output of the semiconductor position detecting element is read and stored in the memory. The calculating means subtracts the edge output when the light emitting element is turned off from the edge output when the light emitting element is turned on, and performs an arithmetic process such as a normalization operation,
Calculate the position signal. The end output when the light emitting element is not lit is
The output corresponds to the dark current, and the dark current component is removed by the above-described processing, and the variation of the measured value due to the variation of the reference voltage is also removed. Further, since the light emission amount of the light emitting element is not controlled to increase or decrease, there is no movement of the light emission center, and the measurement value does not change due to the movement of the light emission center.

【0015】[0015]

【実施例】本発明を図2ないし図4に示す各実施例に基
づいて詳細に説明する。図2および図3は本発明の第1
実施例に係り、図2は装置の構成を示す回路ブロック
図、図3はその動作を示すフローチャートである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail based on the embodiments shown in FIGS. 2 and 3 show the first embodiment of the present invention.
2 is a circuit block diagram showing the configuration of the apparatus, and FIG. 3 is a flow chart showing the operation thereof.

【0016】図2に示すように、この実施例に係る位置
検出装置は、前記した従来例と同様に、半導体位置検出
素子1と、半導体位置検出素子1の受光面を照射する発
光ダイオード2と、発光ダイオード2の発光をピンポイ
ント状に絞るレンズ3とを備えている。また、半導体位
置検出素子1が、通常、固定側の部材に取り付けられ、
発光ダイオード2が荷重等により変位する可動側の部材
に取り付けられる点も、従来例と同じである。
As shown in FIG. 2, the position detecting device according to this embodiment includes a semiconductor position detecting element 1 and a light emitting diode 2 for irradiating the light receiving surface of the semiconductor position detecting element 1 as in the conventional example described above. And a lens 3 for narrowing the light emission of the light emitting diode 2 in a pinpoint manner. Further, the semiconductor position detecting element 1 is usually attached to a member on the fixed side,
The point that the light emitting diode 2 is attached to a movable member that is displaced by a load or the like is the same as in the conventional example.

【0017】半導体位置検出素子1の共通電極にはバイ
アス電圧として基準電圧が印加されるとともに、光電流
の出力側には、2個のアナログスイッチ4,5と、単一
の電流/電圧変換器6と、単一のA/D変換器7と、C
PU8と、メモリ9とが設けられている。
A reference voltage is applied as a bias voltage to the common electrode of the semiconductor position detecting element 1, and two analog switches 4 and 5 and a single current / voltage converter are provided on the photocurrent output side. 6, a single A / D converter 7, C
A PU 8 and a memory 9 are provided.

【0018】両アナログスイッチ4,5は、半導体位置
検出素子1の各端部出力I1,I2を選択的に電流/電圧
変換器6に入力させるためのもので、両アナログスイッ
チ4,5の切換動作により、半導体位置検出素子1の一
方の端部電極が電流/電圧変換器6に接続され、他方の
端部電極の出力がグランドに落とされるようになってい
る。電流/電圧変換器6は、一方のアナログスイッチ4
(5)を通じて入力するいずれか一方の端部電極からの
光電流I1(I2)を電圧信号V1(V2)に変換する。A
/D変換器7は、この例では電圧/周波数変換器で構成
されており、電流/電圧変換器6の後段でその出力V1
(V2)をデジタル量に変換する。CPU8は、後述の
フローチャートで説明するように、アナログスイッチ
4,5の切換制御に関連してA/D変換器7の出力を読
み取り、そのデジタル値を逐次メモリ9に記憶させると
ともに、メモリ9に記憶されたデジタル値を演算処理し
て位置信号を算出するもので、機能的には図1の特許請
求の範囲対応図に示した読み取り手段および演算手段と
して動作する。
Both analog switches 4 and 5 are for selectively inputting the respective end outputs I 1 and I 2 of the semiconductor position detecting element 1 to the current / voltage converter 6, and both analog switches 4 and 5 are provided. By this switching operation, one end electrode of the semiconductor position detecting element 1 is connected to the current / voltage converter 6, and the output of the other end electrode is grounded. The current / voltage converter 6 has one analog switch 4
The photocurrent I 1 (I 2 ) from any one of the end electrodes input through (5) is converted into a voltage signal V 1 (V 2 ). A
The / D converter 7 is composed of a voltage / frequency converter in this example, and its output V 1 is provided at the subsequent stage of the current / voltage converter 6.
Convert (V 2 ) into a digital quantity. The CPU 8 reads the output of the A / D converter 7 in connection with the switching control of the analog switches 4 and 5, and sequentially stores the digital value in the memory 9 as well as the memory 9 in the memory 9 as described in the flowchart described later. The stored digital value is arithmetically processed to calculate the position signal, and functionally operates as the reading unit and the arithmetic unit shown in the corresponding diagram of the claims of FIG.

【0019】一方、発光ダイオード2には、発光量調整
用のトリマ10と、スイッチングトランジスタ11とが
接続されている。スイッチングトランジスタ11は、発
光ダイオード2の点灯/消灯を切り換える点灯切換手段
であって、前記したCPU8により、その読み取り動作
に関連して切換制御される。
On the other hand, the light emitting diode 2 is connected to a trimmer 10 for adjusting the amount of emitted light and a switching transistor 11. The switching transistor 11 is a lighting switching means for switching between lighting and extinguishing of the light emitting diode 2, and is switching-controlled by the CPU 8 in connection with the reading operation.

【0020】次に、上記構成の動作を図3のフローチャ
ートに基づいて説明する。一連の動作は、(A)発光ダ
イオード2の非点灯時のルーチンと、(B)点灯時のル
ーチンと、(C)その後の演算・出力のルーチンとから
なる。
Next, the operation of the above configuration will be described with reference to the flowchart of FIG. A series of operations includes (A) a routine when the light emitting diode 2 is not lit, (B) a routine when it is lit, and (C) a subsequent calculation / output routine.

【0021】装置の可動側部材に負荷をセットした後、
スタートさせると、まず、非点灯時のルーチン(A)に
入り、発光ダイオード2を消灯させた状態で、半導体位
置検出素子1の各端部出力を読み取る。すなわち、スイ
ッチングトランジスタ11がオフの状態の下で、ステッ
プS1において、一方の、図示例では上部の端部電極が
電流/電圧変換器6に接続されるよう、両アナログスイ
ッチ4,5を切換セットし、ステップS2で、上部の端
部電極の出力に対応する電圧信号Va1を、A/D変換
器7を通じてデジタル量として読み取って、これをメモ
リ9に格納する。次いで、ステップS3で、両アナログ
スイッチ4,5を他方へ切り換えて、下部の端部電極の
出力を電流/電圧変換器6に入力させ、ステップS4
で、その端部出力を示す電圧信号Va2をデジタル量と
して読み取ってメモリ9に格納する。このようにして、
半導体位置検出素子1の端部出力が相次いで読み取られ
るのであるが、この読み取り時、半導体位置検出素子1
の前面では発光ダイオード2が点灯していないから、読
み取られたデジタル値は、半導体位置検出素子1に流れ
た暗電流の電流値に相当する。
After setting the load on the movable member of the apparatus,
When it is started, first, the routine (A) for non-lighting is started, and the output of each end of the semiconductor position detecting element 1 is read with the light emitting diode 2 turned off. That is, under the condition that the switching transistor 11 is off, in step S1, both analog switches 4 and 5 are set to be switched so that one end electrode in the illustrated example, which is the upper end electrode, is connected to the current / voltage converter 6. Then, in step S2, the voltage signal Va 1 corresponding to the output of the upper end electrode is read as a digital amount through the A / D converter 7 and stored in the memory 9. Next, in step S3, both analog switches 4 and 5 are switched to the other, and the output of the lower end electrode is input to the current / voltage converter 6, and step S4
Then, the voltage signal Va 2 indicating the end output is read as a digital amount and stored in the memory 9. In this way
The end output of the semiconductor position detecting element 1 is read one after another. At this time, the semiconductor position detecting element 1 is read.
Since the light emitting diode 2 is not lit on the front surface of, the read digital value corresponds to the current value of the dark current flowing through the semiconductor position detecting element 1.

【0022】ステップS5からは点灯時のルーチン
(B)であって、ステップS5では、まず、スイッチン
グトランジスタ11をオンに切り換えて、発光ダイオー
ド2を点灯する。次のステップS6では、両アナログス
イッチ4,5を一方に切り換えて、上部の端部電極の出
力を電流/電圧変換器6に入力させ、ステップS7で、
上部の端部電極の出力を示す電圧信号V1をA/D変換
器7を通じてデジタル量として読み取って、これをメモ
リ9に格納する。次いで、ステップS8では、両アナロ
グスイッチ4,5を他方へ切り換えて、下部の端部電極
の出力を電流/電圧変換器6に入力させ、ステップS9
で、その出力を示す電圧信号V2をデジタル量として読
み取って、メモリ9に格納する。ステップS10では、
発光ダイオード2を消灯する。ここまでのルーチンで、
演算に必要な非点灯時の出力と点灯時の出力との取り込
みが完了する。
The routine from step S5 is a routine for lighting (B). In step S5, first, the switching transistor 11 is turned on to light the light emitting diode 2. In the next step S6, both analog switches 4 and 5 are switched to one so that the output of the upper end electrode is input to the current / voltage converter 6, and in step S7,
The voltage signal V 1 indicating the output of the upper end electrode is read as a digital amount through the A / D converter 7 and stored in the memory 9. Next, in step S8, both analog switches 4 and 5 are switched to the other, and the output of the lower end electrode is input to the current / voltage converter 6, and step S9
Then, the voltage signal V 2 indicating the output is read as a digital amount and stored in the memory 9. In step S10,
The light emitting diode 2 is turned off. In the routine so far,
Acquisition of the non-lighted output and the lighted output required for calculation is completed.

【0023】ステップS11以下は、取り込んだデジタ
ル値に基づいた演算とその演算結果の出力のルーチン
で、ステップS11では、点灯時の各端部出力V
1(V2)からそれぞれ対応する端部の非点灯時の出力V
1(Va2)を差し引き、その出力差について正規化の
演算を行って位置信号を算出する。位置信号をPとし、
その処理を式に表すと、 P={(V1−Va1)−(V2−Va2)} /{(V1−Va1)+(V2−Va2)} ………(1) となる。ここで、非点灯時での出力Va1,Va2は暗電
流に相当するから、この出力を差し引くことで、光照射
により発生した出力(光電流分)のみが抽出されること
になる。また、基準電圧が変動した場合、その変動は計
測サイクルに比べ長い周期で起こり、非点灯時の出力V
1,Va2も点灯時の出力V1,V2もともにレベル変化
するから、両出力の間の引算により、その変動分はほぼ
相殺される。ステップS12では、この演算結果を表示
器に表示したり、場合によっては、アナログ変換して他
の機器へ出力して、1計測サイクルを終える。これに要
する時間は、約10m秒である。
Steps S11 and thereafter are routines for the calculation based on the fetched digital values and the output of the calculation results. In step S11, each end output V at the time of lighting is calculated.
1 (V 2 ) to the output V when the corresponding end is not lit
The position signal is calculated by subtracting a 1 (Va 2 ) and performing a normalization operation on the output difference. Position signal is P,
Expressing the processing as an expression, P = {(V 1 −Va 1 ) − (V 2 −Va 2 )} / {(V 1 −Va 1 ) + (V 2 −Va 2 )} ... (1 ) Becomes. Here, the outputs Va 1 and Va 2 at the time of non-lighting correspond to the dark current, and therefore, by subtracting this output, only the output (photocurrent amount) generated by the light irradiation is extracted. Further, when the reference voltage fluctuates, the fluctuation occurs in a cycle longer than the measurement cycle, and the output V
Since both a 1 and Va 2 and the outputs V 1 and V 2 at the time of lighting change in level, the fluctuations are almost canceled by the subtraction between both outputs. In step S12, this calculation result is displayed on a display, or in some cases, converted into an analog signal and output to another device, and one measurement cycle ends. The time required for this is about 10 ms.

【0024】なお、ステップS11での演算は上記のも
のに限らず、下記の(2)式に示すように、点灯時の各
端部出力V1(V2)からそれぞれ対応する端部の非点灯
時の出力Va1(Va2)を差し引き、その出力差の比の
対数関数として位置信号を算出するようにしてもよい。
すなわち、位置信号Pは、 P=log{(V1−Va1)/(V2−Va2)} ……………(2) となる。
The calculation in step S11 is not limited to the above, and as shown in the following equation (2), each end output V 1 (V 2 ) at the time of lighting is changed to the corresponding end output. The output Va 1 (Va 2 ) during lighting may be subtracted, and the position signal may be calculated as a logarithmic function of the ratio of the output differences.
That is, the position signal P becomes P = log {(V 1 -Va 1) / (V 2 -Va 2)} ............... (2).

【0025】図4は、本発明の第2実施例に係る位置検
出装置の構成を示す回路ブロック図である。この実施例
では、半導体位置検出素子1の各端部電極に、それぞれ
の出力I1,I2を電圧信号V1,V2に変換する一対の電流
/電圧変換器61,62と、各電流/電圧変換器61,
62の出力V1,V2をデジタル量に変換する一対のA/
D変換器71,72とが設けられ、両A/D変換器7
1,72の出力がCPU8に導入されるようになってい
る。その他の部分は、第1実施例のものと同じで、対応
する部分には同一の符号を付して、詳細な説明は省略す
る。
FIG. 4 is a circuit block diagram showing the configuration of the position detecting device according to the second embodiment of the present invention. In this embodiment, a pair of current / voltage converters 61 and 62 for converting the respective outputs I 1 and I 2 into voltage signals V 1 and V 2 are provided to the respective end electrodes of the semiconductor position detecting element 1 and the respective currents. / Voltage converter 61,
A pair of A / s for converting the outputs V 1 and V 2 of 62 into digital quantities
D converters 71 and 72 are provided, and both A / D converters 7 are provided.
The outputs of 1, 72 are introduced into the CPU 8. The other parts are the same as those of the first embodiment, and corresponding parts are designated by the same reference numerals, and detailed description thereof will be omitted.

【0026】また、CPU8は、第1実施例のものとほ
ぼ同様に動作するのであって、発光ダイオード2を消灯
させた状態で、半導体位置検出素子1の各端部出力に対
応する側のA/D変換器71(72)を介して読み取っ
てメモリ9に記憶させ、次いで、発光ダイオード2を点
灯させた状態で、半導体位置検出素子1の各端部出力を
読み取ってメモリ9に記憶させ、メモリ9に記憶させた
出力値を、前記した式(1)もしくは(2)により演算
処理して位置信号を算出する。
Further, the CPU 8 operates in substantially the same manner as that of the first embodiment, and the A on the side corresponding to each end output of the semiconductor position detecting element 1 in the state where the light emitting diode 2 is turned off. The data is read via the / D converter 71 (72) and stored in the memory 9, and then the output of each end of the semiconductor position detecting element 1 is read and stored in the memory 9 while the light emitting diode 2 is turned on. The output value stored in the memory 9 is arithmetically processed by the above-described equation (1) or (2) to calculate the position signal.

【0027】なお、実施例では、発光素子の非点灯時に
半導体位置検出素子1の出力を計測した後、発光素子を
点灯して半導体位置検出素子1の出力を計測するように
したが、点灯時での計測を先に行ってもよいし、計測を
繰り返す場合は、非点灯時での計測の回数を減らし、1
秒程度の間隔で、CPU8の空き時間、例えば位置信号
の出力時を利用して、非点灯時での計測を行うようにし
てもよい。
In the embodiment, the output of the semiconductor position detecting element 1 is measured when the light emitting element is not lit, and then the light emitting element is lit and the output of the semiconductor position detecting element 1 is measured. The measurement may be performed first, or if the measurement is repeated, reduce the number of times of measurement during non-lighting.
The idle time of the CPU 8, for example, when the position signal is output may be used at intervals of about a second to perform the measurement in the non-lighted state.

【0028】[0028]

【発明の効果】本発明によれば、発光素子の点灯時での
半導体位置検出素子の出力から非点灯時の出力を差し引
いて位置信号を算出するようにしたから、温度変化で暗
電流が増減していたり、基準電圧の変動に伴い出力が変
動していても、その変動分が定量的に取り除かれること
になり、測定条件の変化に影響されることなく、高精度
の測定が可能になる。
According to the present invention, since the position signal is calculated by subtracting the output when the light emitting element is turned on from the output of the semiconductor position detecting element when the light emitting element is turned on, the dark current increases or decreases depending on the temperature change. Even if the output voltage fluctuates or the output fluctuates due to fluctuations in the reference voltage, the fluctuations are quantitatively removed, and high-precision measurement is possible without being affected by changes in measurement conditions. ..

【0029】また、発光素子の発光量のフィードバック
制御をせずに、単に点灯/消灯の切り換えを行うだけで
あるから、発光素子の発光中心が移動するようなことが
なく、この点からも、高精度の測定が可能になる。
Further, since the light emission amount of the light emitting element is not feedback-controlled and the light emitting element is simply turned on / off, the light emitting center of the light emitting element does not move. From this point as well, Highly accurate measurement becomes possible.

【0030】さらに、半導体位置検出素子の出力の演算
処理により、基準電圧の変動の影響を排除しうるので、
高精度で高価な基準電源回路を用いる必要がなく、コス
トの低減を図ることができる。
Further, the influence of the fluctuation of the reference voltage can be eliminated by the arithmetic processing of the output of the semiconductor position detecting element.
Since it is not necessary to use a highly accurate and expensive reference power supply circuit, the cost can be reduced.

【0031】このほか、発光素子は必要時にのみ短時間
点灯すればよいから、消費電力が少なくて済み、バッテ
リー駆動の場合に有利である。
In addition, since the light emitting element needs to be lighted for a short time only when necessary, it consumes less power and is advantageous in battery driving.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の特許請求の範囲対応図である。FIG. 1 is a diagram corresponding to the scope of the claims of the present invention.

【図2】本発明の第1実施例に係る位置検出装置の回路
ブロック図である。
FIG. 2 is a circuit block diagram of the position detection device according to the first embodiment of the present invention.

【図3】上記実施例の動作を示すフローチャートであ
る。
FIG. 3 is a flowchart showing the operation of the above embodiment.

【図4】本発明の第2実施例に係る位置検出装置の回路
ブロック図である。
FIG. 4 is a circuit block diagram of a position detection device according to a second embodiment of the present invention.

【図5】従来の位置検出装置の回路ブロック図である。FIG. 5 is a circuit block diagram of a conventional position detecting device.

【図6】従来の他の位置検出装置の回路ブロック図であ
る。
FIG. 6 is a circuit block diagram of another conventional position detecting device.

【符号の説明】 1 半導体位置検出素子 2 発光ダイオード(発光素子) 6 電流/電圧変換器 7 A/D変換器 8 CPU(読み取り手段、演算手段) 9 メモリ 11 スイッチングトランジスタ(点灯切換手段)[Description of Reference Signs] 1 semiconductor position detecting element 2 light emitting diode (light emitting element) 6 current / voltage converter 7 A / D converter 8 CPU (reading means, computing means) 9 memory 11 switching transistor (lighting switching means)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体位置検出素子と、この半導体位置
検出素子に対向配置された発光素子とを有する位置検出
装置において、 半導体位置検出素子の各端部出力をデジタル量に変換す
るA/D変換器と、 発光素子の非点灯時および点灯時に半導体位置検出素子
の各端部出力をA/D変換器を介して読み取る読み取り
手段と、 読み取り手段の読み取り動作に関連して発光素子の点灯
/消灯を切り換える点灯切換手段と、 読み取り手段により読み取られた非点灯時および点灯時
での半導体位置検出素子の各端部出力を記憶するメモリ
と、 メモリに記憶された点灯時での各端部出力から非点灯時
の各端部出力を差し引いて位置信号を演算する演算手段
と、 を備えたことを特徴とする位置検出装置。
1. A position detecting device having a semiconductor position detecting element and a light emitting element arranged to face the semiconductor position detecting element, wherein A / D conversion for converting each end output of the semiconductor position detecting element into a digital amount. And a reading means for reading each end output of the semiconductor position detecting element through the A / D converter when the light emitting element is not lit and when the light emitting element is lit, and turning on / off the light emitting element in association with the reading operation of the reading means. From the lighting switching means for switching between, the memory for storing each end output of the semiconductor position detecting element read by the reading means during non-lighting and during lighting, and each end output during lighting stored in the memory. A position detecting device comprising: a calculating unit that calculates a position signal by subtracting each end output when the lamp is not lit.
JP4057982A 1992-03-16 1992-03-16 Position detecting device Pending JPH05256608A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4057982A JPH05256608A (en) 1992-03-16 1992-03-16 Position detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4057982A JPH05256608A (en) 1992-03-16 1992-03-16 Position detecting device

Publications (1)

Publication Number Publication Date
JPH05256608A true JPH05256608A (en) 1993-10-05

Family

ID=13071221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4057982A Pending JPH05256608A (en) 1992-03-16 1992-03-16 Position detecting device

Country Status (1)

Country Link
JP (1) JPH05256608A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014173842A (en) * 2013-03-05 2014-09-22 Canon Inc Light-emitting element drive device, control method of the same, optical encoder, and camera

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465834A (en) * 1977-11-04 1979-05-26 Osamu Matsui Valve device to be interposed between two vessels different of pressure
JPS58169270U (en) * 1982-05-07 1983-11-11 岩本 信一 Ball valve with gas vent hole
JPH01103633U (en) * 1987-12-25 1989-07-13

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5465834A (en) * 1977-11-04 1979-05-26 Osamu Matsui Valve device to be interposed between two vessels different of pressure
JPS58169270U (en) * 1982-05-07 1983-11-11 岩本 信一 Ball valve with gas vent hole
JPH01103633U (en) * 1987-12-25 1989-07-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014173842A (en) * 2013-03-05 2014-09-22 Canon Inc Light-emitting element drive device, control method of the same, optical encoder, and camera

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