JPH05255897A - Jet-type gold electroplating growth device - Google Patents
Jet-type gold electroplating growth deviceInfo
- Publication number
- JPH05255897A JPH05255897A JP5210492A JP5210492A JPH05255897A JP H05255897 A JPH05255897 A JP H05255897A JP 5210492 A JP5210492 A JP 5210492A JP 5210492 A JP5210492 A JP 5210492A JP H05255897 A JPH05255897 A JP H05255897A
- Authority
- JP
- Japan
- Prior art keywords
- gold plating
- jet
- wafer
- chuck
- plating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は噴流式電解金メッキ成長
装置に係わり、特に半導体基板の噴流式電解金メッキ成
長装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jet type electrolytic gold plating growth apparatus, and more particularly to a jet type electrolytic gold plating growth apparatus for semiconductor substrates.
【０００２】[0002]
【従来の技術】図３は従来の噴流式電解金メッキ装置を
示す図である。貯液槽１４内でヒーター１５により温調
された金メッキ液を噴流ポンプ１６によって、噴流カッ
プ４より噴流させその噴流口に半導体基板（以下ウェハ
と言う）２のプロセス面（表面）を下向きにセットし、
また同時に噴流カップ４内に陽極電極３と、ウェハチャ
ック１に陰極電極を設け、定電流制御電源１３より定電
流を供給し、ウェハプロセス面に静止状態で金メッキ膜
の成長をさせていた。この技術で直径が６インチのウェ
ハに１．５μｍ膜厚の金メッキ膜を形成する場合におい
て、ウェハ面内１７点の膜厚均一性能は±８％（３σ）
以上程度であった。尚、図３で、１７は排液バルブ、１
８は給液パルブ、６はドレイン盤である。2. Description of the Related Art FIG. 3 is a view showing a conventional jet type electrolytic gold plating apparatus. The gold plating liquid whose temperature is adjusted by the heater 15 in the liquid storage tank 14 is jetted from the jet cup 4 by the jet pump 16 and the process surface (surface) of the semiconductor substrate (hereinafter referred to as wafer) 2 is set downward at the jet port. Then
At the same time, the anode electrode 3 and the cathode electrode of the wafer chuck 1 are provided in the jet cup 4, and a constant current is supplied from the constant current control power supply 13 to grow the gold plating film on the wafer process surface in a stationary state. When a gold plating film with a film thickness of 1.5 μm is formed on a wafer with a diameter of 6 inches by this technology, the film thickness uniformity performance at 17 points on the wafer surface is ± 8% (3σ).
It was about the above. In FIG. 3, 17 is a drain valve, 1
Reference numeral 8 is a liquid supply valve, and 6 is a drain board.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の金メッ
キ装置はウェハの裏面を吸着する機能を有するウェハチ
ャックを用い、そのチャックは固定されており、ウェハ
は静止状態で金メッキ成長する機能となっているので、
電解ムラ、及び噴流カップよりの噴流ムラ、また噴流カ
ップあるいはウェハチャックの傾きなどの原因により成
長された金メッキ膜の膜厚がウェハ面内で不均一になる
という欠点があった。The above-described conventional gold plating apparatus uses a wafer chuck having a function of adsorbing the back surface of the wafer, the chuck is fixed, and the wafer has a function of growing gold plating in a stationary state. Because
There is a drawback that the thickness of the gold-plated film grown on the surface of the wafer becomes non-uniform due to electrolysis unevenness, jet unevenness from the jet cup, and inclination of the jet cup or wafer chuck.
【０００４】[0004]
【課題を解決するための手段】本発明の金メッキ成長装
置は、ウェハの吸着チャックに回転モーターを用い、吸
着チャックの回転と共にウェハが低速回転しながら、噴
流成長処理を行う機能を備えている。The gold plating growth apparatus of the present invention has a function of using a rotary motor for the chuck of the wafer and performing a jet growth process while the wafer is rotating at a low speed as the chuck is rotated.
【０００５】[0005]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例を示す説明図である。貯液
層でヒーターにより、温調された金メッキ液をポンプに
より、噴流カップ４より噴流させ、その噴流にウェハチ
ャック１にて裏面を真空接続口１１より真空引きされて
吸着されているウェハ２をセットし絶縁部品７を上に設
けられている回転モーラー５を用いて、回転をＯリング
１０，ベアリング９を介して伝達してチャックシャフト
８と共にウェハチャック１を回転させ、かつ陽極電極３
とチャックシャフト８の一部に板バネ式で接触された陰
極電極６との間に電流を流し、ウェハ２を低速回転させ
ながら、あらかじめ設定してあるタイマがタイムアップ
するまで金メッキ膜を成長させる。The present invention will be described below with reference to the drawings. FIG. 1 is an explanatory view showing an embodiment of the present invention. The gold plating liquid whose temperature was controlled by the heater in the liquid storage layer was jetted from the jet cup 4 by the pump, and the wafer 2 sucked by the wafer chuck 1 was evacuated from the vacuum connection port 11 on its back surface to be attracted. Rotation is transmitted through the O-ring 10 and the bearing 9 to rotate the wafer chuck 1 together with the chuck shaft 8 by using the rotary molar 5 having the insulating component 7 set thereon and the anode electrode 3
And a cathode electrode 6 that is in contact with a part of the chuck shaft 8 by a leaf spring method, a current is flown to rotate the wafer 2 at a low speed, and a gold plating film is grown until a preset timer expires. .
【０００６】次に本発明の別の実施例について図２を参
照して説明する。尚、図２で図１と同一の機能の箇所は
同じ機能で示してある。貯液層でヒーターにより温調さ
れた金メッキ液をポンプにより噴流カップ４より噴流さ
せ、その噴流にウェハチャック１にて吸着されているウ
ェハ２をセットし、回転モーター５を用いてチャックシ
ャフト８と共にウェハチャック１を回転させ、更にその
チャック部がシリンダ１２により、横揺動を行い、か
つ、陽極電極３とチャックシャフト８の一部に板バネ式
で接触された陰極電極６との間に電流を流し、予じめ設
定してあるタイマがタイムアップするまで金メッキ膜を
成長させる。この実施例においては、ウェハ中央部（回
転中心部）も水平移動することにより、より一層のメッ
キ厚の均一性が向上する効果がある。Next, another embodiment of the present invention will be described with reference to FIG. In FIG. 2, the parts having the same functions as those in FIG. 1 are shown by the same functions. A gold plating solution whose temperature is controlled by a heater in the liquid storage layer is jetted from a jet cup 4 by a pump, the wafer 2 adsorbed by the wafer chuck 1 is set in the jet, and a rotary motor 5 is used together with the chuck shaft 8. The wafer chuck 1 is rotated, and further, the chuck portion laterally oscillates by the cylinder 12, and a current flows between the anode electrode 3 and the cathode electrode 6 which is in contact with a part of the chuck shaft 8 by a leaf spring method. And the gold plating film is grown until the preset timer expires. In this embodiment, the central portion (rotational center portion) of the wafer is also moved horizontally, which has the effect of further improving the uniformity of the plating thickness.
【０００７】[0007]
【発明の効果】以上説明したように本発明はウェハを回
転させながら、金メッキ膜を成長させることにより、ウ
ェハプロセス面内で金メッキ膜厚を従来技術は直径が６
インチのウェハに１．５μｍの膜厚の金メッキ膜を形成
する場合において、ウェハ面内１７点の膜厚均一性能が
±８％（３σ）以上であったものを±５％（３σ）以下
を確保できる。As described above, according to the present invention, the gold plating film is grown in the wafer process plane by rotating the wafer while the gold plating film is grown.
When forming a gold-plated film with a film thickness of 1.5 μm on an inch wafer, the film thickness uniformity performance at 17 points within the wafer was ± 8% (3σ) or more and ± 5% (3σ) or less Can be secured.
【図１】本発明の一実施例を示す説明図。FIG. 1 is an explanatory view showing an embodiment of the present invention.
【図２】本発明の別の実施例を示す説明図。FIG. 2 is an explanatory view showing another embodiment of the present invention.
【図３】従来技術の構成を示す説明図。FIG. 3 is an explanatory diagram showing a configuration of a conventional technique.
１ ウェハチャック ２ ウェハ ３ 陽極電極 ４ 噴流カップ ５ 回転モーター ６ 陰極電極 ７ 絶縁部品 ８ チャックシャフト ９ ベアリング １０ Ｏリング １１ 真空接続口 １２ エアーシリンダ １３ 定電流制御電源 １４ 貯液槽 １５ ヒーター １６ 噴流ポンプ １７ 排液バルブ １８ 給液バルブ 1 Wafer chuck 2 Wafer 3 Anode electrode 4 Jet cup 5 Rotation motor 6 Cathode electrode 7 Insulation component 8 Chuck shaft 9 Bearing 10 O-ring 11 Vacuum connection port 12 Air cylinder 13 Constant current control power supply 14 Liquid storage tank 15 Heater 16 Jet pump 17 Drain valve 18 Liquid supply valve
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/30 7352−4Ｍ (72)発明者 斎藤 浩央 東京都港区芝５丁目37番８号（住友三田ビ ル）日本電気ファクトリエンジニアリング 株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI Technical indication location H01L 21/30 7352-4M (72) Inventor Hiroo Saito 5-7-8 Shiba, Minato-ku, Tokyo (Sumitomo Mita Building) NEC Factory Engineering Co., Ltd.
Claims (1)
半導体基板上に向け噴流させ、かつ、半導体基板を陰
極、噴流する液を陽極とし、電流を流すことで、半導体
基板上に金メッキ膜を成長させる金メッキ膜成長装置に
おいて、金メッキ成長時に半導体基板を低速回転させる
ことを特徴とする噴流式電解金メッキ成長装置。1. A pump for controlling the temperature of the gold plating solution,
In a gold plating film growth apparatus for growing a gold plating film on a semiconductor substrate by jetting a current toward the semiconductor substrate, using the semiconductor substrate as a cathode and the jetting liquid as an anode, and flowing a current, the semiconductor substrate is slowed down during gold plating growth. A jet-type electrolytic gold plating growth device characterized by rotating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5210492A JP2885564B2 (en) | 1992-03-11 | 1992-03-11 | Jet-type electrolytic gold plating growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5210492A JP2885564B2 (en) | 1992-03-11 | 1992-03-11 | Jet-type electrolytic gold plating growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05255897A true JPH05255897A (en) | 1993-10-05 |
| JP2885564B2 JP2885564B2 (en) | 1999-04-26 |
Family
ID=12905548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5210492A Expired - Fee Related JP2885564B2 (en) | 1992-03-11 | 1992-03-11 | Jet-type electrolytic gold plating growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2885564B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6001235A (en) * | 1997-06-23 | 1999-12-14 | International Business Machines Corporation | Rotary plater with radially distributed plating solution |
| EP1647614A2 (en) * | 1997-07-15 | 2006-04-19 | Semitool, Inc. | Plating system for semiconductor materials |
-
1992
- 1992-03-11 JP JP5210492A patent/JP2885564B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6001235A (en) * | 1997-06-23 | 1999-12-14 | International Business Machines Corporation | Rotary plater with radially distributed plating solution |
| EP1647614A2 (en) * | 1997-07-15 | 2006-04-19 | Semitool, Inc. | Plating system for semiconductor materials |
| EP1647614A3 (en) * | 1997-07-15 | 2006-06-07 | Semitool, Inc. | Plating system for semiconductor materials |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2885564B2 (en) | 1999-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990119 |
|
| LAPS | Cancellation because of no payment of annual fees |