JPH05255831A - Plasma thermal spraying apparatus - Google Patents
Plasma thermal spraying apparatusInfo
- Publication number
- JPH05255831A JPH05255831A JP4052175A JP5217592A JPH05255831A JP H05255831 A JPH05255831 A JP H05255831A JP 4052175 A JP4052175 A JP 4052175A JP 5217592 A JP5217592 A JP 5217592A JP H05255831 A JPH05255831 A JP H05255831A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- arc discharge
- spraying apparatus
- carrier gas
- thermal spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Plasma Technology (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、プラズマ溶射による溶
射膜の膜厚，膜質等の制御可能なプラズマ溶射装置に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma spraying apparatus capable of controlling the film thickness and film quality of a sprayed film by plasma spraying.
【０００２】[0002]
【従来の技術】図３は、例えばTechnical Digest of th
e International PVSEC-5 のp.911 のfig.2 に示された
従来のプラズマ溶射装置を示す。図において、１はプラ
ズマ溶射装置の本体で、粉末フィーダ１Ａ，高周波電源
１Ｂを備える。２はプラズマ溶射装置のトーチ部、３は
前記トーチ部２で発生させたプラズマアーク放電、４は
被溶射基板、１２はポンプユニットである。2. Description of the Related Art FIG. 3 shows, for example, Technical Digest of th.
1 shows a conventional plasma spray apparatus shown in fig.2 of p.911 of e International PVSEC-5. In the figure, reference numeral 1 is a main body of a plasma spraying apparatus, which includes a powder feeder 1A and a high frequency power source 1B. Reference numeral 2 is a torch portion of the plasma spraying apparatus, 3 is plasma arc discharge generated in the torch portion 2, 4 is a substrate to be sprayed, and 12 is a pump unit.
【０００３】次に、動作について説明する。プラズマ溶
射装置の本体１の粉末フィーダ１Ａから溶射用粉末を供
給し、これをキャリアガス（例えば、アルゴン）で搬送
する。次いで、高周波電源１Ｂにより高周波電界を印加
し、トーチ部２よりプラズマアーク放電３を発生させ
る。これにより生じた溶射母材を被溶射基板４に転写
し、溶射基板を作成する。このとき、溶射膜の膜厚，膜
質の制御には、キャリアガス流量，高周波電力，粉末の
供給量で調整する。Next, the operation will be described. The powder for thermal spraying is supplied from the powder feeder 1A of the main body 1 of the plasma spraying apparatus, and this is carried by a carrier gas (for example, argon). Then, a high-frequency electric field is applied by the high-frequency power source 1B to generate plasma arc discharge 3 from the torch unit 2. The thermal spraying base material generated by this is transferred to the thermal spraying substrate 4 to create a thermal spraying substrate. At this time, the thickness and quality of the sprayed film are controlled by adjusting the carrier gas flow rate, the high frequency power, and the powder supply amount.
【０００４】[0004]
【発明が解決しようとする課題】従来のプラズマ溶射装
置では、溶射膜の膜厚，膜質に直接的影響を及ぼすプラ
ズマアーク放電３ではなく、粉末供給量，ガス流量，高
周波電力といった間接的な溶射条件を制御対象としてい
るため、制御性が悪いという問題点があった。さらに
は、粉末供給量の変動が意図しない原因で生じたとして
も、これを検知するすべが全くなかった。In the conventional plasma spraying apparatus, not the plasma arc discharge 3 which directly affects the film thickness and film quality of the sprayed film, but the indirect spraying of powder supply amount, gas flow rate, high frequency power. Since the condition is controlled, there is a problem that controllability is poor. Further, even if the fluctuation of the powder supply amount occurs due to an unintended cause, there is no way to detect this.
【０００５】本発明は、上記の問題点を解消するために
なされたもので、プラズマアーク放電そのものを測定，
解析し、膜質および膜厚制御を容易にし、制御性に優れ
たプラズマ溶射装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and measures the plasma arc discharge itself,
The purpose is to analyze and facilitate the control of film quality and film thickness, and to obtain a plasma spraying device having excellent controllability.
【０００６】[0006]
【課題を解決するための手段】本発明に係るプラズマ溶
射装置は、溶射母材とキャリアガスのプラズマアーク放
電強度比を求める発光スペクトル解析手段を設けたもの
である。A plasma spraying apparatus according to the present invention is provided with an emission spectrum analyzing means for obtaining a plasma arc discharge intensity ratio of a spraying base material and a carrier gas.
【０００７】また、発光スペクトル解析手段によるプラ
ズマアーク放電強度比を一定値に保つために、発光スペ
クトル解析手段の出力を用いて溶射母材供給量およびキ
ャリアガス流量を制御するフィードバック信号制御手段
を備えたものである。さらに、フィードバック信号制御
手段によって開閉されるシャッタをトーチ部と被溶射基
板間に設けたものである。Further, in order to maintain the plasma arc discharge intensity ratio by the emission spectrum analysis means at a constant value, there is provided feedback signal control means for controlling the supply amount of the sprayed base material and the carrier gas flow rate using the output of the emission spectrum analysis means. It is a thing. Further, a shutter opened and closed by the feedback signal control means is provided between the torch portion and the substrate to be sprayed.
【０００８】[0008]
【作用】本発明においては、発光スペクトル解析手段よ
り得られる溶射母材とキャリアガスのプラズマアーク放
電強度比から溶射母材供給量およびキャリアガス流量の
変化が検知される。In the present invention, changes in the sprayed base material supply amount and the carrier gas flow rate are detected from the plasma arc discharge intensity ratio of the sprayed base material and the carrier gas obtained by the emission spectrum analysis means.
【０００９】また、フィードバック信号制御手段によっ
て溶射母材供給量およびキャリアガス流量が一定値に制
御されるほか、シャッタによってプラズマ供給が抑止さ
れる。Further, the feedback signal control means controls the sprayed base metal supply amount and the carrier gas flow rate to constant values, and the plasma supply is suppressed by the shutter.
【００１０】[0010]
【実施例】以下、本発明の一実施例を図について説明す
る。図１において、図３と同一符号は同一のものを示
し、５はプラズマアーク放電分光用の光ファイバ、６は
瞬時発光分光器、７はこの瞬時発光分光器６で得られた
発光スペクトルの解析およびフィードバック信号の作成
を行う解析・制御部であり、発光スペクトル解析手段７
Ａと、フィードバック信号制御手段７Ｂとを備えてい
る。１１はフィードバック信号を受けてプラズマを抑止
するシャッタである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, the same reference numerals as those in FIG. 3 indicate the same elements, 5 is an optical fiber for plasma arc discharge spectroscopy, 6 is an instantaneous emission spectroscope, and 7 is an analysis of the emission spectrum obtained by this instantaneous emission spectroscope 6. And an analysis / control unit for creating a feedback signal, and the emission spectrum analysis means 7
A and feedback signal control means 7B. A shutter 11 receives a feedback signal and suppresses plasma.
【００１１】図２は解析・制御部７からのフィードバッ
ク信号のフィードバック先の詳細を示す図で、８は溶射
母材としての粉末の供給を制御するフィーダ、９はキャ
リアガスを制御する流量制御部、１０はプラズマ印加電
力を制御する高周波電源である。FIG. 2 is a diagram showing the details of the feedback destination of the feedback signal from the analysis / control section 7. Reference numeral 8 is a feeder for controlling the supply of powder as the spray base material, and 9 is a flow rate control section for controlling the carrier gas. Reference numeral 10 is a high frequency power source for controlling the power applied to the plasma.
【００１２】すなわち、本発明のプラズマ溶射装置にお
いては、プラズマアーク放電３に対し、プラズマアーク
放電分光用の光ファイバ５を配向させ、瞬時発光分光器
６にて分光する構成としている（本実施例では、主とし
てＳｉ粉末の溶射の場合について説明する。このとき、
キャリアガスはアルゴンである）。瞬時発光分光器６に
て発光強度が観測されるのはＳｉのプラズマアーク放電
光と、アルゴンの発光である。Ｓｉの溶射膜の膜厚およ
び膜質は、主として次の因子等の関数となる。例えば、That is, in the plasma spraying apparatus of the present invention, the optical fiber 5 for plasma arc discharge spectroscopy is oriented with respect to the plasma arc discharge 3, and the instantaneous emission spectroscope 6 is used to perform spectroscopy (this embodiment). Now, the case of thermal spraying of Si powder will be mainly described.
The carrier gas is argon). It is the plasma arc discharge light of Si and the light emission of argon whose emission intensity is observed by the instantaneous emission spectroscope 6. The film thickness and film quality of the Si sprayed film are mainly functions of the following factors. For example,
【数１】 [Equation 1]
【００１３】これらの因子のうち、後者が瞬時発光分光
器６の測定結果として解析・制御部７から得られ、これ
を連続してモニタすることで成膜状況を把握できる。ま
た、この変化を検出して本体１中のフィーダ８、流量制
御部９、高周波電源１０にフィードバック信号として送
ることにより、先に示した因子のうち、後者が時間的に
常に一定となるようにすることが可能になり、膜質の均
一性を得ることができるようになる。Of these factors, the latter is obtained from the analysis / control section 7 as the measurement result of the instantaneous emission spectroscope 6, and the film formation situation can be grasped by continuously monitoring this. Further, by detecting this change and sending it as a feedback signal to the feeder 8, the flow rate controller 9, and the high frequency power source 10 in the main body 1, the latter of the above-mentioned factors is always constant in time. It becomes possible to obtain uniform film quality.
【００１４】なお、上記実施例では、膜質の均一性に関
する制御方法を示したが、先の因子、つまり溶射時間の
積算時間を計測することにより真の溶射時間を得、正確
な膜厚制御を行うことができる。また、上記実施例にお
いて、より膜質の均一性を向上させるためには、先の因
子の時間的変動幅を設定し、この幅の中にあるときには
開、幅から逸出した場合には閉とするようなシャッタ１
１をトーチ部２の前面に配してプラズマを直接抑止して
もよい。さらには、意図的に、膜質を膜厚方向に変化さ
せたい場合等に、発光分光と、シャッタ１１の開閉を組
み合わせることも考えられる。すなわち、膜質と先の因
子との相関関係をあらかじめ測定しておき、先の因子を
パラメータとし、フィーダ８、流量制御部９、高周波電
源１０をコントロールし、所望の発光強度が得られたと
きのみシャッター１１を開き、その他は閉じておくとい
う方法を用いる。In the above embodiment, the control method relating to the uniformity of the film quality was shown. However, the true spraying time can be obtained by measuring the above factor, that is, the cumulative time of the spraying time, and the accurate film thickness control. It can be carried out. Further, in the above-mentioned embodiment, in order to further improve the uniformity of the film quality, the temporal fluctuation width of the above-mentioned factor is set, and when it is in this width, it is opened, and when it is out of the width, it is closed. Shutter 1
1 may be arranged on the front surface of the torch portion 2 to directly suppress the plasma. Furthermore, when it is desired to intentionally change the film quality in the film thickness direction, it is possible to combine emission spectroscopy and opening / closing of the shutter 11. That is, the correlation between the film quality and the above factor is measured in advance, and the feeder 8, the flow rate control unit 9, and the high frequency power source 10 are controlled by using the above factor as a parameter, and only when the desired emission intensity is obtained. A method of opening the shutter 11 and closing the others is used.
【００１５】また、上記実施例では、１種類の溶射母材
を溶射する場合のみを述べたが、２種類以上の粉体から
なる溶射基板を作成する場合にも本方法は有効である。
この場合には、各粉体の構成元素のプラズマアーク放電
を測定し、それぞれの発光強度および強度比からなる因
子を得、上記実施例の如く、膜質および膜厚制御を行
う。Further, in the above-mentioned embodiment, only the case of spraying one kind of spray base material was described, but the present method is also effective when preparing a sprayed substrate made of two or more kinds of powder.
In this case, the plasma arc discharge of the constituent elements of each powder is measured to obtain the factors consisting of the emission intensity and the intensity ratio of each, and the film quality and the film thickness are controlled as in the above embodiment.
【００１６】[0016]
【発明の効果】本発明は、以上説明したとおり、溶射母
材とキャリアガスのプラズマアーク放電強度比を求める
発光スペクトル解析手段を設けたので、溶射母材とキャ
リアガスのプラズマアーク放電強度比から溶射母材供給
量およびキャリアガス流量の変化を検知でき、これを連
続してモニタすることにより成膜状況を把握できるとい
う効果がある。また、フィードバック信号制御手段を設
けてフィードバック信号によりプラズマ溶射部の溶射母
材供給量およびキャリアガス流量が一定となるように制
御する構成とすることで制御性に優れ、均一な成膜を行
えるプラズマ溶射装置を得ることができる。さらに、ト
ーチ部にシャッタを設けることにより、より高度で複雑
な成膜も容易に制御可能になる。As described above, the present invention is provided with the emission spectrum analysis means for obtaining the plasma arc discharge intensity ratio of the spray base material and the carrier gas. It is possible to detect changes in the sprayed base metal supply amount and the carrier gas flow rate, and it is possible to grasp the film formation status by continuously monitoring the changes. Further, by providing a feedback signal control means so as to control the supply amount of the spray base material and the flow rate of the carrier gas of the plasma spraying part to be constant by the feedback signal, the controllability is excellent and the plasma capable of uniform film formation. A thermal spray device can be obtained. Further, by providing a shutter on the torch portion, it becomes possible to easily control higher-level and complicated film formation.
【図１】本発明の一実施例によるプラズマ溶射装置の構
成図である。FIG. 1 is a configuration diagram of a plasma spraying apparatus according to an embodiment of the present invention.
【図２】本発明のプラズマ溶射装置のフィードバック系
を示す構成図である。FIG. 2 is a configuration diagram showing a feedback system of the plasma spraying apparatus of the present invention.
【図３】従来のプラズマ溶射装置の一例を示す構成図で
ある。FIG. 3 is a configuration diagram showing an example of a conventional plasma spraying apparatus.
１ プラズマ溶射装置本体 ２ トーチ部 ３ プラズマアーク放電 ４ 被溶射基板 ５ 光ファイバ ６ 瞬時発光分光器 ７ 解析・制御部 ７Ａ 発光スペクトル解析手段 ７Ｂ フィードバック信号制御手段 ８ フィーダ ９ 流量制御部 １０ 高周波電源 １１ シャッタ DESCRIPTION OF SYMBOLS 1 Plasma spraying apparatus main body 2 Torch part 3 Plasma arc discharge 4 Thermal spray substrate 5 Optical fiber 6 Instantaneous emission spectroscope 7 Analysis / control part 7A Emission spectrum analysis means 7B Feedback signal control means 8 Feeder 9 Flow rate control part 10 High frequency power supply 11 Shutter
Claims (3)
し、高周波電界によりプラズマアーク放電としてトーチ
部より被溶射基板に溶射するプラズマ溶射装置におい
て、前記溶射母材とキャリアガスのプラズマアーク放電
強度比を求める発光スペクトル解析手段を設けたことを
特徴とするプラズマ溶射装置。1. A plasma arc discharge apparatus in which a powder of a spray base material is carried by a carrier gas and is sprayed onto a substrate to be sprayed from a torch part as a plasma arc discharge by a high frequency electric field in the plasma arc discharge strength of the spray base material and the carrier gas. A plasma spraying apparatus, characterized in that it is provided with an emission spectrum analyzing means for obtaining a ratio.
アーク放電強度比を一定値に保つために、発光スペクト
ル解析手段の出力を用いて溶射母材供給量およびキャリ
アガス流量を制御するフィードバック信号制御手段を設
けた請求項１記載のプラズマ溶射装置。2. A feedback signal control means for controlling the supply amount of the sprayed base material and the flow rate of the carrier gas by using the output of the emission spectrum analyzing means in order to maintain the plasma arc discharge intensity ratio by the emission spectrum analyzing means at a constant value. The plasma spraying apparatus according to claim 1.
ク信号制御手段によって開閉されるシャッタを設けた請
求項２記載のプラズマ溶射装置。3. The plasma spraying apparatus according to claim 2, further comprising a shutter provided between the torch portion and the substrate to be sprayed which is opened and closed by a feedback signal control means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4052175A JPH05255831A (en) | 1992-03-11 | 1992-03-11 | Plasma thermal spraying apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4052175A JPH05255831A (en) | 1992-03-11 | 1992-03-11 | Plasma thermal spraying apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05255831A true JPH05255831A (en) | 1993-10-05 |
Family
ID=12907482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4052175A Pending JPH05255831A (en) | 1992-03-11 | 1992-03-11 | Plasma thermal spraying apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05255831A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008521170A (en) * | 2004-11-16 | 2008-06-19 | ハイパーサーム インコーポレイテッド | Plasma arc torch with electrode with internal flow path |
| US7872207B2 (en) | 2003-05-21 | 2011-01-18 | Otb Solar B.V. | Cascade source and a method for controlling the cascade source |
| JP2013060645A (en) * | 2011-09-14 | 2013-04-04 | Nippon Chutetsukan Kk | Method for forming corrosion resistant coating to metallic deformed pipe |
-
1992
- 1992-03-11 JP JP4052175A patent/JPH05255831A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7872207B2 (en) | 2003-05-21 | 2011-01-18 | Otb Solar B.V. | Cascade source and a method for controlling the cascade source |
| US8183495B2 (en) | 2003-05-21 | 2012-05-22 | Otb Solar B.V. | Cascade source and a method for controlling the cascade source |
| JP2008521170A (en) * | 2004-11-16 | 2008-06-19 | ハイパーサーム インコーポレイテッド | Plasma arc torch with electrode with internal flow path |
| JP2013060645A (en) * | 2011-09-14 | 2013-04-04 | Nippon Chutetsukan Kk | Method for forming corrosion resistant coating to metallic deformed pipe |
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