JPH05251186A - Light emitting element and manufacture thereof - Google Patents
Light emitting element and manufacture thereofInfo
- Publication number
- JPH05251186A JPH05251186A JP4989192A JP4989192A JPH05251186A JP H05251186 A JPH05251186 A JP H05251186A JP 4989192 A JP4989192 A JP 4989192A JP 4989192 A JP4989192 A JP 4989192A JP H05251186 A JPH05251186 A JP H05251186A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- electrode
- layer
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 8
- 239000010419 fine particle Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 10
- 230000007774 longterm Effects 0.000 abstract description 3
- 238000006116 polymerization reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000012044 organic layer Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical compound C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 distyryl anthracene derivative Chemical class 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、表示素子に利用可能な
有機発光物質を用いた発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device using an organic light emitting material applicable to a display device.
【０００２】[0002]
【従来の技術】従来の有機発光物質を用いた発光素子と
しては、単層または、正孔注入層や電子注入層を有する
多層構造の素子が知られている（斎藤ら、化学と工業
第４２巻 第１１号（１９８９）ｐ１４３ など）。
発光層、正孔注入層、電子注入層の各有機層は、真空蒸
着やスピンコーティングにより１０００オングストロー
ム程度の厚さの均一な薄膜で形成されている。電極は基
板側にＩＴＯや酸化スズ等の透明電極を用い、有機層上
にはインジウムやマグネシウム−銀合金等の金属電極を
真空蒸着により形成している。直流１０ボルト程度の駆
動電圧で、１０００cd／m2以上の発光輝度が得られてい
る。2. Description of the Related Art As a conventional light emitting device using an organic light emitting material, a device having a single layer or a multilayer structure having a hole injection layer and an electron injection layer is known (Saito et al., Kagaku and Kogyo).
42, No. 11 (1989) p143).
Each of the light emitting layer, the hole injecting layer, and the electron injecting layer is formed as a uniform thin film having a thickness of about 1000 Å by vacuum deposition or spin coating. As the electrode, a transparent electrode such as ITO or tin oxide is used on the substrate side, and a metal electrode such as indium or magnesium-silver alloy is formed on the organic layer by vacuum evaporation. With a driving voltage of about 10 V DC, an emission luminance of 1000 cd / m 2 or more was obtained.
【０００３】[0003]
【発明が解決しようとする課題】しかしこのように作成
した発光素子は、有機層上に金属電極を真空蒸着により
形成する際、非常に薄い有機層に変質や破壊が起こりや
すく、素子のばらつきや信頼性が低いなどの課題があっ
た。更に、金属電極の酸化等による経時変化も表示特性
を劣化させた。また、有機層が通常のフォトエッチング
プロセスに耐えないため、大容量表示を行なうための電
極のパターン形成ができなという課題があった。However, in the light-emitting device thus produced, when a metal electrode is formed on the organic layer by vacuum vapor deposition, alteration or destruction is likely to occur in a very thin organic layer, which may cause variations in the device. There were issues such as low reliability. Furthermore, the display characteristics are also deteriorated due to changes with time due to oxidation of the metal electrodes. Further, since the organic layer does not withstand a normal photoetching process, there is a problem that it is not possible to form an electrode pattern for displaying a large capacity.
【０００４】本発明は前記課題を解決するためのもので
あり、初期歩留まりと面内均質性が高く、長期信頼性に
優れた発光素子、及び大容量表示が可能な電極パターン
を有する発光素子の製造方法を提供することを目的とす
る。The present invention is intended to solve the above problems, and provides a light-emitting element having high initial yield and in-plane homogeneity, excellent long-term reliability, and a light-emitting element having an electrode pattern capable of large-capacity display. It is intended to provide a manufacturing method.
【０００５】[0005]
【課題を解決するための手段】上記目的は、電極間に少
なくとも有機発光層を有する発光素子において、少なく
とも一方の電極を、導電性微粒子が分散した高分子層で
構成することにより達成される。The above object can be achieved by forming at least one electrode of a polymer layer in which conductive fine particles are dispersed in a light emitting device having at least an organic light emitting layer between electrodes.
【０００６】また、電極間に少なくとも有機発光層を有
する発光素子において、少なくとも一方の電極を、導電
性微粒子が分散した高分子溶液を印刷法で塗布すること
によりパターン形成し、乾燥、加熱により定着させるこ
とで製造できる。更に、導電性微粒子と重合性分子を含
む液を印刷法で塗布することによりパターン形成し、加
熱や紫外線照射等により重合、定着させることでも製造
できる。Further, in a light emitting device having at least an organic light emitting layer between electrodes, at least one electrode is patterned by applying a polymer solution in which conductive fine particles are dispersed by a printing method, and is fixed by drying and heating. Can be manufactured. Further, it can be produced by applying a liquid containing conductive fine particles and a polymerizable molecule by a printing method to form a pattern, and then polymerizing and fixing by heating, irradiation with ultraviolet rays or the like.
【０００７】[0007]
（実施例１）図１は本実施例における構成を模式的に示
す発光素子の断面図である。基板としては、表面を光学
研磨したパイレックスガラス１１を用い、ＩＴＯの導電
体膜をスパッターもしくは蒸着で形成し、フォトエッチ
ングによって１００μｍ幅にパターンを形成して陰極１
２とした。この基板上に、１０００Åの膜厚となるよう
にオキサジアゾール誘導体を蒸着し、正孔注入層１３と
した。その上にアントラセンを真空蒸着により、５００
Åの膜厚で形成し発光層１４とした。ここでは発光物質
としてアントラセンを用いたが、ピレン、ベンズアント
ラセン、ペリレン、テトラセン、ナフタセン、コロネ
ン、クマリン、シクロペンタジエン、キノリン、及びこ
れら有機発光物質の誘導体などが同様に利用できる。(Embodiment 1) FIG. 1 is a cross-sectional view of a light emitting device schematically showing the construction of this embodiment. As the substrate, a Pyrex glass 11 having an optically polished surface is used, an ITO conductive film is formed by sputtering or vapor deposition, and a pattern is formed in a width of 100 μm by photoetching to form a cathode 1.
It was set to 2. On this substrate, an oxadiazole derivative was vapor-deposited so as to have a film thickness of 1000 Å to form a hole injection layer 13. Anthracene is vacuum-deposited on it by 500
The light emitting layer 14 was formed with a film thickness of Å. Although anthracene was used as the light emitting substance here, pyrene, benzanthracene, perylene, tetracene, naphthacene, coronene, coumarin, cyclopentadiene, quinoline, and derivatives of these organic light emitting substances can be similarly used.
【０００８】次に「サイトップＣＴＸ」（旭硝子社製）
を適度な蒸気圧のフッ素系溶媒に溶解し、サブミクロン
オーダーの粒径のインジウム微粒子を添加し、均一に分
散させた。この液をオフセット印刷法を用いて、基板電
極と直交するよう１００μｍ幅に塗布し、８０℃に加熱
して定着させ正極１５とし、大容量表示が可能な発光素
子が得られた。正孔注入層と発光層は、変質も変形もせ
ず、面内で均一な発光特性が観察された。４００ライン
での時分割駆動が可能であり、前述したような高精細化
も可能となった。Next, "Cytop CTX" (made by Asahi Glass Co., Ltd.)
Was dissolved in a fluorine-based solvent having an appropriate vapor pressure, and indium fine particles having a particle size of submicron order were added and uniformly dispersed. This liquid was applied by offset printing to a width of 100 μm so as to be orthogonal to the substrate electrode, heated to 80 ° C. and fixed to form the positive electrode 15, and a light-emitting element capable of large-capacity display was obtained. The hole injection layer and the light emitting layer were neither altered nor deformed, and uniform emission characteristics were observed in the plane. The time-divisional driving of 400 lines is possible, and the high definition as described above is also possible.
【０００９】（実施例２）表面を光学研磨したガラス上
に、数百オングストロームの粒径の酸化スズ微粒子が分
散したアクリル−エポキシ系樹脂溶液を、暗室内でスク
リーン印刷法を用いて１００μｍ間隔で３００μｍ幅に
塗布し、紫外線を照射した後１５０℃の加熱により高分
子化させ、パターン電極を形成した。絶縁体のポリジシ
クロヘキシルフマレートと、正孔注入物質であるトリフ
ェニルアミン誘導体とを共にトルエンに溶解させ、０．
５μｍのフィルターを通して原料溶液とした。基板上に
１２００Åの膜厚となるように回転数と時間を制御し
て、スピンコーターで前述の原料溶液を塗布し、正孔注
入層とした。(Example 2) An acrylic-epoxy resin solution in which fine particles of tin oxide having a particle diameter of several hundred angstroms are dispersed on glass whose surface is optically polished is screen-printed in a dark room at 100 μm intervals. It was applied to a width of 300 μm, irradiated with ultraviolet rays, and then polymerized by heating at 150 ° C. to form a pattern electrode. The polydicyclohexyl fumarate, which is an insulator, and the triphenylamine derivative, which is a hole-injecting substance, are both dissolved in toluene,
A raw material solution was obtained through a 5 μm filter. The rotation speed and time were controlled so that the film thickness was 1200Å on the substrate, and the above-mentioned raw material solution was applied by a spin coater to form a hole injection layer.
【００１０】その上にキノリンの誘導体を真空蒸着によ
り、８００Åの膜厚で形成し発光層とした。更にフタロ
シアニン誘導体を真空蒸着により、５００Åの膜厚で形
成し電子注入層とした。A quinoline derivative was formed thereon by vacuum vapor deposition to a thickness of 800 Å to form a light emitting layer. Further, a phthalocyanine derivative was vacuum-deposited to a thickness of 500 Å to form an electron injection layer.
【００１１】次にアクリル酸誘導体及びそのオリゴマー
に、サブミクロンオーダーの粒径のカーボン微粒子を添
加し、均一に分散させた。この液を暗室内でスクリーン
印刷法を用いて、基板電極と直交するよう１００μｍ間
隔で３００μｍ幅に塗布し、紫外線を照射した後８０℃
に加熱して高分子化させ正極とした。縦４８０、横６４
０画素の大容量表示が可能な発光素子が得られた。正孔
注入層と発光層と電子注入層は、変質も変形もせず、面
内で均一な発光特性が観察された。また、フォトエッチ
ングによりパターンニングした電極で度々見られる、基
板電極エッジ付近でのショート不良は全く発生しなかっ
た。４８０ラインでの時分割駆動が可能であり、パーソ
ナルコンピューター端末の表示が可能となった。Next, fine carbon particles having a particle size of submicron order were added to the acrylic acid derivative and its oligomer and dispersed uniformly. This solution was applied by screen printing in a dark room at intervals of 100 μm so as to have a width of 300 μm so as to be orthogonal to the substrate electrode, and was irradiated with ultraviolet rays, then at 80 °
It was heated to a high temperature and polymerized to obtain a positive electrode. Vertical 480, horizontal 64
A light emitting device capable of displaying a large capacity of 0 pixels was obtained. The hole injecting layer, the light emitting layer, and the electron injecting layer were neither altered nor deformed, and uniform emission characteristics were observed in the plane. In addition, the short circuit defect near the edge of the substrate electrode, which is often seen in the electrodes patterned by photoetching, did not occur at all. The time-divisional drive of 480 lines is possible, and the display of a personal computer terminal is possible.
【００１２】（実施例３）表面を光学研磨したパイレッ
クスガラス上にＩＴＯの導電体膜をスパッターもしくは
蒸着で形成し、フォトエッチングによって１００μｍ角
にパターンを形成して画素電極とした。更に、各電極毎
にＭＩＭ（メタル−インシュレーター−メタル）２端子
素子を形成した。この基板上に、ジスチリルアントラセ
ン誘導体を１０００Åの膜厚となるように真空蒸着によ
り形成し、発光層とした。(Example 3) A conductive film of ITO was formed on a Pyrex glass whose surface was optically polished by sputtering or vapor deposition, and a pattern of 100 μm square was formed by photoetching to form a pixel electrode. Furthermore, a MIM (metal-insulator-metal) two-terminal element was formed for each electrode. A distyryl anthracene derivative was formed on this substrate by vacuum vapor deposition so as to have a film thickness of 1000 Å to form a light emitting layer.
【００１３】ビニルアルコールのオリゴマーをアルコー
ルに溶解し、サブミクロンオーダーの粒径のカーボン微
粒子を添加し、均一に分散させた。この液をスクリーン
印刷法を用いて、基板画素電極に重なるよう１００μｍ
幅に塗布し、１００℃に加熱した後、電子線を２００キ
ロボルトの加速電圧で照射した。高分子化して安定な電
極となり、大容量表示が可能な発光素子が得られた。発
光層は変質も変形もせず、面内で均一な発光特性が観察
された。各画素毎のフィールド反転駆動が可能であり、
前述したような高精細化も可能となった。応答速度が非
常に高速なため、動画の表示も可能であった。An oligomer of vinyl alcohol was dissolved in alcohol, and carbon fine particles having a particle size of submicron order were added and uniformly dispersed. This liquid is applied by screen printing to 100 μm so as to overlap the substrate pixel electrode.
After being applied to the width and heated to 100 ° C., an electron beam was applied at an accelerating voltage of 200 kilovolts. A light emitting device capable of high-capacity display was obtained by polymerizing into a stable electrode. The light emitting layer was neither altered nor deformed, and uniform light emitting characteristics were observed in the plane. Field inversion drive for each pixel is possible,
Higher definition as described above has become possible. Since the response speed was extremely high, it was possible to display a movie.
【００１４】[0014]
【発明の効果】以上述べたように、本発明によれば少な
くとも一方の電極を、導電性微粒子が分散した高分子層
で構成される発光素子を提供することにより、電極形成
の際有機層にダメージを与えないため初期歩留まりがと
面内均質性が高く、長期信頼性に優れた表示が可能とな
った。As described above, according to the present invention, by providing a light emitting device in which at least one electrode is composed of a polymer layer in which conductive fine particles are dispersed, an organic layer is formed during electrode formation. Since no damage is given, the initial yield is high and the in-plane homogeneity is high, which enables display with excellent long-term reliability.
【００１５】また、少なくとも一方の電極を、導電性微
粒子が分散した高分子溶液を印刷法で塗布することによ
りパターン形成し、乾燥、加熱により定着させること、
あるいは、導電性微粒子と重合性分子を含む液を印刷法
で塗布することによりパターン形成し、加熱や紫外線照
射等により重合、定着させる発光素子の製造方法を提供
することにより、大容量表示が可能な電極パターンを有
する発光素子の製造が可能となった。Further, at least one of the electrodes is patterned by applying a polymer solution in which conductive particles are dispersed by a printing method, and is fixed by drying and heating.
Alternatively, a large-capacity display is possible by providing a method for manufacturing a light-emitting element in which a liquid containing conductive fine particles and a polymerizable molecule is applied by a printing method to form a pattern, which is polymerized and fixed by heating, ultraviolet irradiation, or the like. It has become possible to manufacture a light emitting device having various electrode patterns.
【図１】本発明の実施例１における発光素子の構成を模
式的に表す断面図である。FIG. 1 is a cross-sectional view schematically showing a configuration of a light emitting device in Example 1 of the present invention.
１１‥‥‥‥‥基板ガラス １２‥‥‥‥‥透明電極 １３‥‥‥‥‥正孔注入層 １４‥‥‥‥‥発光層 １５‥‥‥‥‥導電性微粒子が分散した高分子電極 11 Glass substrate 12 Transparent electrode 13 Hole injection layer 14 Light emitting layer 15 Polymer electrode in which conductive particles are dispersed
Claims (3)
発光素子において、少なくとも一方の電極を、導電性微
粒子が分散した高分子層で構成することを特徴とする発
光素子。1. A light emitting device having at least an organic light emitting layer between electrodes, wherein at least one electrode is composed of a polymer layer in which conductive fine particles are dispersed.
発光素子において、少なくとも一方の電極を、導電性微
粒子が分散した高分子溶液を印刷法で塗布することによ
りパターン形成し、乾燥、加熱により定着させることを
特徴とする発光素子の製造方法。2. In a light emitting device having at least an organic light emitting layer between electrodes, at least one electrode is patterned by applying a polymer solution in which conductive fine particles are dispersed by a printing method, and is fixed by drying and heating. A method of manufacturing a light-emitting element, comprising:
発光素子において、少なくとも一方の電極を、導電性微
粒子と重合性分子を含む液を印刷法で塗布することによ
りパターン形成し、加熱や紫外線照射等により重合、定
着させることを特徴とする発光素子の製造方法。3. In a light emitting device having at least an organic light emitting layer between electrodes, at least one of the electrodes is patterned by applying a liquid containing conductive fine particles and a polymerizable molecule by a printing method, and heating or ultraviolet irradiation. A method for producing a light-emitting element, which comprises polymerizing and fixing by a method such as.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4989192A JP3284249B2 (en) | 1992-03-06 | 1992-03-06 | Light emitting device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4989192A JP3284249B2 (en) | 1992-03-06 | 1992-03-06 | Light emitting device manufacturing method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001383519A Division JP2002237389A (en) | 2001-12-17 | 2001-12-17 | Light-emitting element and personal computer terminal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05251186A true JPH05251186A (en) | 1993-09-28 |
| JP3284249B2 JP3284249B2 (en) | 2002-05-20 |
Family
ID=12843658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4989192A Expired - Lifetime JP3284249B2 (en) | 1992-03-06 | 1992-03-06 | Light emitting device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3284249B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058265A (en) * | 1998-07-28 | 2000-02-25 | Eastman Kodak Co | Organic luminescence element and its manufacture |
| JP2002237382A (en) * | 2001-02-13 | 2002-08-23 | Stanley Electric Co Ltd | Organic led element and its manufacturing method |
| JP2003168560A (en) * | 2001-11-27 | 2003-06-13 | Osram Opto Semiconductors Gmbh | Manufacturing method of organic electroluminescence display and this kind of display |
| WO2003054981A1 (en) * | 2001-12-20 | 2003-07-03 | Add-Vision, Inc. | Screen printable electrode for organic light emitting device |
| US7056180B2 (en) | 2002-12-26 | 2006-06-06 | Seiko Epson Corporation | Manufacturing method of organic electroluminescent device, organic electroluminescent device, and electronic apparatus |
| DE10324880B4 (en) * | 2003-05-30 | 2007-04-05 | Schott Ag | Process for the preparation of OLEDs |
| JP2007149577A (en) * | 2005-11-30 | 2007-06-14 | Alps Electric Co Ltd | Light emitting device |
| JP2007149578A (en) * | 2005-11-30 | 2007-06-14 | Alps Electric Co Ltd | Method of manufacturing light emitting device |
| KR100982411B1 (en) * | 2007-12-27 | 2010-09-15 | (주)에이디에스 | Organic light emitting diode and method for manufacturing the same |
-
1992
- 1992-03-06 JP JP4989192A patent/JP3284249B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000058265A (en) * | 1998-07-28 | 2000-02-25 | Eastman Kodak Co | Organic luminescence element and its manufacture |
| JP2002237382A (en) * | 2001-02-13 | 2002-08-23 | Stanley Electric Co Ltd | Organic led element and its manufacturing method |
| JP4627897B2 (en) * | 2001-02-13 | 2011-02-09 | スタンレー電気株式会社 | Manufacturing method of organic LED element |
| JP2003168560A (en) * | 2001-11-27 | 2003-06-13 | Osram Opto Semiconductors Gmbh | Manufacturing method of organic electroluminescence display and this kind of display |
| WO2003054981A1 (en) * | 2001-12-20 | 2003-07-03 | Add-Vision, Inc. | Screen printable electrode for organic light emitting device |
| US7056180B2 (en) | 2002-12-26 | 2006-06-06 | Seiko Epson Corporation | Manufacturing method of organic electroluminescent device, organic electroluminescent device, and electronic apparatus |
| DE10324880B4 (en) * | 2003-05-30 | 2007-04-05 | Schott Ag | Process for the preparation of OLEDs |
| JP2007149577A (en) * | 2005-11-30 | 2007-06-14 | Alps Electric Co Ltd | Light emitting device |
| JP2007149578A (en) * | 2005-11-30 | 2007-06-14 | Alps Electric Co Ltd | Method of manufacturing light emitting device |
| KR100982411B1 (en) * | 2007-12-27 | 2010-09-15 | (주)에이디에스 | Organic light emitting diode and method for manufacturing the same |
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| Publication number | Publication date |
|---|---|
| JP3284249B2 (en) | 2002-05-20 |
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