JPH05243888A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH05243888A JPH05243888A JP4042807A JP4280792A JPH05243888A JP H05243888 A JPH05243888 A JP H05243888A JP 4042807 A JP4042807 A JP 4042807A JP 4280792 A JP4280792 A JP 4280792A JP H05243888 A JPH05243888 A JP H05243888A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- inductor
- acoustic wave
- wire
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14597—Matching SAW transducers to external electrical circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、弾性表面波装置に関
し、特にインダクタ素子による整合を必要とする高周波
の弾性表面波装置、及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device, and more particularly to a high frequency surface acoustic wave device which requires matching with an inductor element and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】弾性表面波装置においは、通常外部回路
との接続は弾性表面波装置の中心周波数で入力インピ−
ダンスＺｉ＝５０Ωで接続される。このため、弾性表面
波装置の入力インピ−ダンスを５０Ωとするため、弾性
表面波装置の入力インピ−ダンスに対し、インダクタ、
コンデンサ、抵抗を直列、又は並列に接続することによ
り外部回路より弾性表面波装置を見た入力インピ−ダン
スＺｉが５０Ωとなるように設定される。このため、弾
性表面波を送受する入力、及び出力用櫛形電極と同一基
板上に、インダクタ、コンデンサ、抵抗を薄膜により形
成する手段が採られている。特開昭５６−１５６０１５
はその一例である。上記技術は、弾性表面波を送受する
入力、及び出力用櫛形電極に並列接続するインダクタン
ス素子を、上記櫛形電極の近傍に各々、導電帯で蒸着、
スパッタなどの被着手段により設け、同一圧電性基板上
に一体に形成したものである。2. Description of the Related Art In a surface acoustic wave device, a connection with an external circuit is usually made by inputting an input impedance at the center frequency of the surface acoustic wave device.
Dance Zi = 50Ω is connected. Therefore, in order to set the input impedance of the surface acoustic wave device to 50Ω, an inductor,
By connecting a capacitor and a resistor in series or in parallel, the input impedance Zi of the surface acoustic wave device viewed from the external circuit is set to be 50Ω. For this reason, a means for forming an inductor, a capacitor, and a resistor with a thin film on the same substrate as the input and output comb electrodes for transmitting and receiving surface acoustic waves is adopted. JP-A-56-156015
Is an example. In the above technique, an inductance element that is connected in parallel to the input and output comb electrodes for transmitting and receiving surface acoustic waves is vapor-deposited with a conductive band in the vicinity of each of the comb electrodes.
It is provided by a deposition means such as sputtering and is integrally formed on the same piezoelectric substrate.
【０００３】又、実開昭５０−１３０２３８において
は、、弾性表面波を送受する入力、及び出力用櫛形電極
を形成した圧電基板上に、平板状電極とその平板状電極
の上に絶縁性の粘弾性薄膜を設け、上記粘弾性薄膜上
に、スパイラル状電極を形成し、所望のキャパシタンス
とインダクタンスを構成したものがある。Further, in Japanese Utility Model Application Laid-Open No. 50-130238, a flat plate electrode and an insulating layer on the flat plate electrode are formed on a piezoelectric substrate on which input and output comb electrodes for transmitting and receiving surface acoustic waves are formed. There is one in which a viscoelastic thin film is provided and a spiral electrode is formed on the viscoelastic thin film to form a desired capacitance and inductance.
【０００４】その他整合方法の関連特許として、特開昭
５５−１０５４２８、特開昭５７−１２９０１３が挙げ
られる。Other related patents on the matching method include JP-A-55-105428 and JP-A-57-129013.
【０００５】[0005]
【発明が解決しようとする課題】弾性表面波装置におい
て、特に入力、及び出力用櫛形電極の膜厚が厚くなる
と、電極内部での弾性表面波の反射が大きくなり、周波
数特性でリップルが大きくなる不都合があり、特にＵＨ
Ｆ帯以上の高周波では、櫛形電極の膜厚は、約１００ｎ
ｍ程度と薄く設定する必要がある。In the surface acoustic wave device, especially when the film thickness of the input and output comb-shaped electrodes becomes large, the reflection of the surface acoustic wave inside the electrodes becomes large, and the ripple in the frequency characteristic becomes large. Inconvenience, especially UH
At high frequencies above the F band, the thickness of the comb-shaped electrode is about 100n.
It is necessary to set it as thin as about m.
【０００６】入力、及び出力櫛形電極と同じ膜厚１００
ｎｍで形成すると、インダクタ素子部の導体抵抗が無視
できず、インダクタ素子を形成した効果がない。このた
め、インダクタ素子の電極膜厚を入力、及び出力櫛形電
極の膜厚に比べ厚く形成する必要がある。このためイン
ダクタ素子部は、リフトオフにより作成する手段が一般
に用いられているため、製造工程が増えるという不都合
が生じる。又、リフトオフ法を用いない場合でも、薄膜
によりインダクタ素子を形成する場合、導体抵抗、導体
の持つキャパシタンス等により、所望のインダクタンス
特性が得られにくく、上記従来例のような、複雑な作成
方法が必要となることがある。The same film thickness as the input and output comb electrodes 100
If it is formed with the thickness of nm, the conductor resistance of the inductor element cannot be ignored, and the effect of forming the inductor element is not obtained. Therefore, it is necessary to make the electrode film thickness of the inductor element thicker than the film thickness of the input and output comb electrodes. For this reason, since the inductor element section is generally formed by means of lift-off, there is a disadvantage that the number of manufacturing steps increases. Even when the lift-off method is not used, when forming an inductor element with a thin film, it is difficult to obtain a desired inductance characteristic due to the conductor resistance, the capacitance of the conductor, and the like. May be needed.
【０００７】リフトオフ工程においては、インダクタ素
子を形成するため、入力、及び出力櫛形電極を形成後、
フォトレジストであらかじめフォトリソグラフィ技術で
形成した上記入力、及び出力櫛形電極を被膜する。そし
て、ＥＢ蒸着、又はスパッタ法によりＡｌ膜を厚付け
し、インダクタ素子以外のＡｌを除去し、薄膜インダク
タを厚付け形成する。このためフォトレジストの耐熱温
度により、ＥＢ蒸着、又はスパッタ時の基板加熱温度が
限定されるため、リフトオフ法により形成されたＡｌ膜
の基板に対する密着強度が不足し、形成したインダクタ
素子が基板から剥離、又はワイヤ−ボンディングの際、
Ａｌ膜剥離が生じ所望のインダクタ特性が得られない。
又、製造プロセスにおいて、上記問題点からプロセス条
件の設定が非常に難しい。更に、弾性表面波装置の中心
周波数が、８００〜９００ＭＨｚ帯と高周波なことか
ら、薄膜インダクタ素子形成後、所望の特性が得られる
とは限らないため、薄膜インダクタ素子の微調整を必要
とするが、従来技術においては微調整が不可能である。In the lift-off process, in order to form an inductor element, after forming the input and output comb electrodes,
The above-mentioned input and output comb-shaped electrodes which are previously formed by photolithography with a photoresist are coated. Then, an Al film is thickened by EB vapor deposition or a sputtering method, Al other than the inductor element is removed, and a thin film inductor is thickly formed. Therefore, the heat-resistant temperature of the photoresist limits the substrate heating temperature during EB vapor deposition or sputtering, so that the adhesion strength of the Al film formed by the lift-off method to the substrate is insufficient, and the formed inductor element is separated from the substrate. , Or wire-bonding,
Al film peeling occurs and desired inductor characteristics cannot be obtained.
Also, in the manufacturing process, it is very difficult to set the process conditions due to the above problems. Further, since the center frequency of the surface acoustic wave device is as high as 800 to 900 MHz band, desired characteristics may not always be obtained after the thin film inductor element is formed. Therefore, fine adjustment of the thin film inductor element is required. Fine adjustment is impossible in the prior art.
【０００８】本発明は、上記従来技術の問題点を解決
し、弾性表面波を送受する入力、及び出力用櫛形電極を
形成した圧電性基板上、又は別途基板上に整合用インダ
クタンス素子をリフトオフ等の作成法を用いず、容易
に、しかも信頼性の優れたインダクタ素子を有する弾性
表面波装置、及びその製造方法を提供することを目的と
する。The present invention solves the above problems of the prior art and lifts off a matching inductance element on a piezoelectric substrate on which input and output comb electrodes for transmitting and receiving surface acoustic waves are formed, or on a separate substrate. It is an object of the present invention to provide a surface acoustic wave device having an inductor element which is excellent in reliability and which does not use the manufacturing method described above, and a manufacturing method thereof.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、圧電性基板上に、弾性表面波を送受する
入力、及び出力用櫛形電極を有する弾性表面波装置にお
いて、整合用インダクタンスをワイヤ−により形成する
ためのボンディングパタ−ンを形成し、ワイヤ−により
インダクタンス特性を有する構成としたものである。In order to achieve the above object, the present invention provides a surface acoustic wave device having a comb-shaped electrode for input and output of surface acoustic waves on a piezoelectric substrate for matching. A bonding pattern for forming an inductance with a wire is formed, and the wire has an inductance characteristic.
【００１０】[0010]
【作用】上記のような手段をとることにより、リフトオ
フ等による整合用薄膜インダクタの製造工程を必要とし
ない。すなわち、第１の金属薄膜からなるインダクタ用
電極パタ−ンをスパイラル状に、ワイヤ−ボンディング
時に必要なボンディングパットと同時に形成し、ワイヤ
−ボンディングの際に、上記インダクタ用電極パタ−ン
をワイヤ−によりそれぞれ所定の長さに接続し、インダ
クタ素子が形成される。又、ワイヤ−の長さは、形成さ
れたインダクタ用電極パタ−ンのワイヤ−ボンディング
のワイヤ−接続数により調整ができる。以上のことか
ら、整合用インダクタ素子の製造方法が極めて容易で、
調整可能なインダクタを有する弾性表面波が提供でき
る。By adopting the above means, the manufacturing process of the matching thin film inductor by lift-off or the like is not necessary. That is, the inductor electrode pattern made of the first metal thin film is formed in a spiral shape at the same time as the bonding pad necessary for wire bonding, and the wire electrode is used to form the inductor electrode pattern during wire bonding. Are connected to each other with predetermined lengths to form inductor elements. Further, the length of the wire can be adjusted by the number of wire connections of the formed wire pattern of the inductor electrode pattern. From the above, the manufacturing method of the matching inductor element is extremely easy,
A surface acoustic wave having an adjustable inductor can be provided.
【００１１】[0011]
【実施例】以下、本発明の第１の実施例を図１及び図２
により説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS.
Will be explained.
【００１２】本発明の第１の実施例の弾性表面波装置
は、図１の平面図、及び図２の図１Ａ−Ａ’断面図に示
したような構成になっている。３６度回転Ｙ軸切断Ｘ軸
伝搬のタンタル酸リチウム単結晶（３６Ｙ−Ｘ ＬｉＴ
ａＯ3）からなる圧電性基板１の上に、ワイヤリングの
強度を増すためのボンディングパッド２、並びにインダ
クタ素子をワイヤ−により形成するためのボンディング
用電極パタ−ン３（以下インダクタ用電極パタ−ンと呼
ぶ。）を第１の金属薄膜である純Ａｌで電子ビ−ム蒸着
（ＥＢ蒸着）により２０００ｎｍ厚に成膜し、その上に
ホトレジストを塗布後、露光及び現像により、ボンディ
ングパッド２、インダクタ用電極パタ−ン３のホトレジ
ストパタ−ンを形成した。つぎに、このホトレジストパ
タ−ンをマスクとして、湿式化学エッチングにより純Ａ
ｌをエッチング除去し、ボンディングパッド２、インダ
クタ用電極パタ−ン３を形成したものである。The surface acoustic wave device according to the first embodiment of the present invention has the structure shown in the plan view of FIG. 1 and the sectional view of FIG. 1A-A '. 36 degree rotation Y-axis cutting X-axis propagation lithium tantalate single crystal (36Y-X LiT
On a piezoelectric substrate 1 made of aO 3 ), a bonding pad 2 for increasing the strength of wiring and a bonding electrode pattern 3 for forming an inductor element with a wire (hereinafter referred to as an inductor electrode pattern). Is formed with pure Al that is the first metal thin film to a thickness of 2000 nm by electron beam vapor deposition (EB vapor deposition), and a photoresist is applied thereon, followed by exposure and development to bond pad 2, inductor. A photoresist pattern for the electrode pattern 3 was formed. Next, using this photoresist pattern as a mask, pure A is formed by wet chemical etching.
1 is removed by etching to form the bonding pad 2 and the inductor electrode pattern 3.
【００１３】上記のように、圧電性基板１の上に、第１
の金属薄膜からなるボンディングパッド２、インダクタ
用電極パタ−ン３を形成した後、その上に、第２の金属
薄膜であるＡｌ−Ｔｉ膜を１００ｎｍの厚さにＤＣマグ
ネトロンスパッタ法により成膜し、前述した露光、現像
及びエッチング等のホトリソグラフィ技術により、電極
線幅１．２μｍの入力、出力用櫛形電極４、５、及び第
１の金属薄膜からなるボンディングパッド２、インダク
タ用電極パタ−ン３上重ね合わせる形でボンディングパ
ッド２’、インダクタ用電極パタ−ン３’を形成してい
る。As described above, on the piezoelectric substrate 1, the first
After forming the bonding pad 2 and the inductor electrode pattern 3 made of the metal thin film, the second metal thin film Al-Ti film having a thickness of 100 nm is formed thereon by the DC magnetron sputtering method. By the photolithography technique such as the exposure, development and etching described above, the input / output comb-shaped electrodes 4 and 5 having an electrode line width of 1.2 μm, the bonding pad 2 made of the first metal thin film, and the electrode pattern for the inductor are formed. The bonding pad 2'and the inductor electrode pattern 3'are formed so as to be superposed on each other.
【００１４】この圧電性基板１をパッケ−ジの入力リ−
ドピン６と出力リ−ドピン７が配置してあるパッケ−ジ
ベ−ス８に固定する。入力、出力用櫛形電極４、５の一
方の電極の端部に設けられたボンディングパッド２−１
と入力リ−ドピン６がＡｌワイヤ−９により接続されて
いる。同様にもう一方の出力用櫛形電極５の端部に設け
られたボンディングパッド２−２と出力リ−ドピン７が
Ａｌワイヤ−９により接続されている。入力、出力用櫛
形電極４、５の他方の電極端部は、ボンディングパッド
２−３によりパッケ−ジベ−ス８とＡｌワイヤ−９で接
続され、ア−スとなっている。The piezoelectric substrate 1 is used as an input lead for a package.
It is fixed to the package base 8 on which the lead pin 6 and the output lead pin 7 are arranged. Bonding pad 2-1 provided on one end of one of the input and output comb-shaped electrodes 4 and 5.
And an input lead pin 6 are connected by an Al wire-9. Similarly, the bonding pad 2-2 provided at the end of the other output comb-shaped electrode 5 and the output lead pin 7 are connected by an Al wire-9. The other electrode ends of the input and output comb-shaped electrodes 4 and 5 are connected to each other by a bonding pad 2-3 and a package base 8 and an Al wire 9 to form an ground.
【００１５】尚、インダクタ用電極パタ−ン３、３’は
それぞれ、Ａｌワイヤ−９により接続され、一方がパッ
ケ−ジベ−ス８面に、もう一方が入力リ−ドピン６と出
力リ−ドピン７に上記Ａｌワイヤ−９により接続されて
いる。The inductor electrode patterns 3 and 3'are connected to each other by an Al wire 9, one of which is on the surface of the package base 8 and the other is an input lead pin 6 and an output lead pin. 7 through the Al wire-9.
【００１６】上記の図１、図２に示した本発明の整合用
インダクタを有する弾性表面波装置構成により、通常、
薄膜インダクタを厚く成膜形成するために用いていたリ
フトオフ工程を必要としない容易な製造方法によるイン
ダクタ素子を有する弾性表面波装置が実現可能である。The surface acoustic wave device having the matching inductor of the present invention shown in FIGS.
It is possible to realize a surface acoustic wave device having an inductor element by a simple manufacturing method that does not require the lift-off process used for forming a thin film inductor thickly.
【００１７】図３（ａ）は、図１、図２の発明に用いた
インダクタの詳細である。上記で説明したように、ワイ
ヤ−ボンディングの際の強度増加のため設けるボンディ
ングパッド２と同時にＥＢ蒸着により２０００ｎｍにイ
ンダクタ用電極パタ−ン３がそれぞれスパイラル状に各
々配置された構成となっている。この構成により、フォ
トリソグラフィ技術において入力、出力用櫛形電極４、
５の電極線幅、電極膜厚がばらついた場合でも、インダ
クタの調整は、ワイヤ−のインダクタ用電極パタ−ン３
への接続本数により容易に調整可能である。又、従来薄
膜インダクタでは、インダクタの作成で、プロセス条件
の変動により、所望のインダクタ特性が得られない場合
がある。更に、リフトオフ法により、圧電性基板１と薄
膜インダクタとの密着度低下による剥離の可能性がある
が、本発明においては、その可能性は極めて少ない。こ
こでは、ワイヤ−により構成するインダクタの形状は、
角形のスパイラルとしたが、図３（ｂ）に示すような三
角形状等、であってもいっこうに構わない。FIG. 3A shows details of the inductor used in the inventions of FIGS. 1 and 2. As described above, the electrode patterns 3 for inductors are spirally arranged at 2000 nm by EB evaporation at the same time as the bonding pads 2 provided for increasing the strength during wire bonding. With this configuration, in the photolithography technique, the input and output comb electrodes 4,
Even when the electrode line width and the electrode film thickness of No. 5 are varied, the adjustment of the inductor is performed by the wire electrode electrode pattern 3
It can be easily adjusted by the number of connections to. Further, in the conventional thin film inductor, there are cases where desired inductor characteristics cannot be obtained due to fluctuations in process conditions in the production of the inductor. Furthermore, the lift-off method may cause peeling due to a reduction in the degree of adhesion between the piezoelectric substrate 1 and the thin film inductor, but in the present invention, this possibility is extremely low. Here, the shape of the inductor formed by the wire is
Although the spiral has a square shape, it may have a triangular shape as shown in FIG. 3B.
【００１８】ワイヤ−ボンディングに用いるワイヤ−
９、インダクタ素子として用いるワイヤ−９は、共に２
５μｍφのＡｌワイヤ−を使用したが、ＡｌのほかＡｕ
等であっても良い。Wire-Wire used for bonding-
9 and the wire 9 used as the inductor element are both 2
An Al wire of 5 μmφ was used.
And so on.
【００１９】尚、第１の金属薄膜からなるボンディング
パッド２、インダクタ用電極パタ−ン３の材料は、純Ａ
ｌに限らず、Ａｌ系合金であっても良い。また、圧電性
基板は、ＬｉＴａＯ3に限らず、ニオブ酸リチウム単結
晶基板（ＬｉＮｂＯ3）、あるいは水晶基板であっても
良い。さらに、第２の金属薄膜からなる入力、出力用櫛
形電極４、５の電極材料はＡｌ−Ｔｉに限らず、他のＡ
ｌ系合金であっても良い。 弾性表面波装置は、電圧を
印加して基板に機械的振動を生じさせるので、余分な慣
性的負荷が加わるのは、好ましくなく、導電性良好で軽
い材料、たとえばＡｌあるいはＡｌ合金で電極を形成す
ることが好ましい。ボンディングパッド２、及びインダ
クタ用電極パタ−ン３の厚付け材料としては、導電性、
導体の低抵抗化の面から本実施例では、純Ａｌを選定し
た。機械振動を生じる入力、出力用櫛形電極４、５は、
耐マイグレ−ション性が重要であるため、導電性は多少
低いが、耐マイグレ−ション性の良好なＡｌ−Ｔｉ合金
を選定した。また、入力、及び出力用櫛形電極４、５形
成には、電極幅に高い寸法精度が要求されるため、湿式
化学エッチングに代わり、ＲＩＥ（ドライエッチング）
技術を用いた。The material of the bonding pad 2 made of the first metal thin film and the inductor electrode pattern 3 is pure A.
The material is not limited to 1 and may be an Al alloy. The piezoelectric substrate is not limited to LiTaO 3, and may be a lithium niobate single crystal substrate (LiNbO 3 ) or a quartz substrate. Furthermore, the electrode material of the input and output comb-shaped electrodes 4 and 5 made of the second metal thin film is not limited to Al-Ti, but other A
It may be an l-based alloy. Since the surface acoustic wave device applies a voltage to generate mechanical vibrations in the substrate, it is not preferable to apply an extra inertial load, and the electrode is formed of a material having good conductivity and lightness, for example, Al or Al alloy. Preferably. The bonding pad 2 and the inductor electrode pattern 3 are made of a conductive material such as a thick material.
Pure Al was selected in this embodiment from the viewpoint of reducing the resistance of the conductor. The input and output comb electrodes 4 and 5 that generate mechanical vibration are
Since the migration resistance is important, the conductivity was somewhat low, but an Al-Ti alloy having good migration resistance was selected. In addition, since high dimensional accuracy is required for the electrode width in forming the input and output comb-shaped electrodes 4 and 5, RIE (dry etching) is used instead of wet chemical etching.
Using technology.
【００２０】次に、本発明の第２の実施例を図４及び図
５により説明する。Next, a second embodiment of the present invention will be described with reference to FIGS.
【００２１】本発明第２の実施例の弾性表面波装置は、
図４の平面図、及び図５の図４Ａ−Ａ’断面図に示した
ような構成になっており、弾性表面波を送受する入力、
及び出力用櫛形電極４、５を形成した圧電性基板１とは
別途の基板１０上に、インダクタ用電極パタ−ン３を形
成し、導電性接着剤１１で圧電性基板１と別途基板１０
を接着した構成となっている。この構成では、入力、及
び出力用櫛形電極４、５とインダクタ用電極パタ−ン３
とは、別途の製造工程を要する不具合が生じるが、大き
なインダクタンス特性を必要とする場合、インダクタ用
電極パタ−ン３の面積が非常に大きくなるため、１ウエ
ハで作成できる弾性表面波装置の製造個数を多く取る点
で有効である。又、インダクタの調整は、第１の実施例
と同様、ワイヤ−のインダクタ用電極パタ−ン３への接
続本数により容易に調整可能である点で変わりはない。
又、本発明のインダクタ素子の接続方法は、外部回路に
対して、直列、並列、及び併用させても構わない。The surface acoustic wave device according to the second embodiment of the present invention is
The configuration shown in the plan view of FIG. 4 and the cross-sectional view of FIG. 4A-A ′ in FIG. 5 has an input for transmitting and receiving a surface acoustic wave,
Further, the electrode pattern 3 for the inductor is formed on the substrate 10 separate from the piezoelectric substrate 1 on which the output comb-shaped electrodes 4 and 5 are formed, and the piezoelectric substrate 1 and the separate substrate 10 are separated by the conductive adhesive 11.
It is configured by bonding. In this configuration, the input / output comb-shaped electrodes 4 and 5 and the inductor electrode pattern 3 are provided.
However, when a large inductance characteristic is required, the area of the electrode pattern 3 for the inductor becomes very large, so that a surface acoustic wave device that can be manufactured with one wafer is manufactured. It is effective in that a large number is taken. Further, the adjustment of the inductor is the same as in the first embodiment in that it can be easily adjusted by the number of connections of the wires to the inductor electrode pattern 3.
Further, the inductor element connection method of the present invention may be used in series, in parallel, or in combination with an external circuit.
【００２２】尚、本発明の弾性表面波装置は、を入力、
及び出力櫛形電極４、５の膜厚は十分に薄く、逆に整合
用インダクタンス素子をワイヤ−により形成するために
形成するインダクタ用電極パタ−ン３の電極膜厚は、ボ
ンディング時に剥離しないだけ十分に厚くしなければな
らないことより、高周波の信号処理用弾性表面波装置に
好適である。The surface acoustic wave device of the present invention inputs
Also, the film thickness of the output comb-shaped electrodes 4 and 5 is sufficiently thin, and conversely, the electrode film thickness of the inductor electrode pattern 3 formed for forming the matching inductance element by the wire is sufficient so as not to peel during bonding. Since it is required to be thick, it is suitable for a surface acoustic wave device for high frequency signal processing.
【００２３】図６は、本発明の弾性表面波装置を用いて
構成した移動無線機システムのアンテナ分波器の実施例
である。この分波器の送信フィルタ１２、受信フィルタ
１３に弾性表面波装置を用いた。送信フィルタ１２、受
信フィルタ１３はそれぞれ、分岐回路１４を介してアン
テナ１５と接続されている。移動無線機システムに用い
る送信フィルタ１２、受信フィルタ１３は、耐電力性を
必要とするほか、８００〜９００ＭＨｚと高周波である
ため、弾性表面波装置を構成する入力、出力用櫛形電極
が１μｍ程度と微細となる。又、フィルタ特性として非
常に低損失で、急峻なフィルタの肩特性を必要とし、外
部インダクタ素子等による整合が不可欠である。このた
め、本発明を用いることにより、高精度なインダクタ素
子を有する弾性表面波装置が提供できる。FIG. 6 shows an embodiment of an antenna demultiplexer of a mobile radio system constructed using the surface acoustic wave device of the present invention. Surface acoustic wave devices were used for the transmission filter 12 and the reception filter 13 of this duplexer. The transmission filter 12 and the reception filter 13 are each connected to the antenna 15 via the branch circuit 14. The transmission filter 12 and the reception filter 13 used in the mobile radio system require power resistance and have a high frequency of 800 to 900 MHz, so that the input and output comb electrodes constituting the surface acoustic wave device have a size of about 1 μm. It becomes fine. Further, as filter characteristics, very low loss and steep filter shoulder characteristics are required, and matching by an external inductor element or the like is essential. Therefore, by using the present invention, a surface acoustic wave device having a highly accurate inductor element can be provided.
【００２４】尚、本発明は、移動無線機システムに限ら
ず、ＶＴＲ、またはＣＡＴＶ用コンバ−タ、衛星放送用
受信機システム等に用いる弾性表面波装置においても有
効な手段であることはいうまでもない。It is needless to say that the present invention is not limited to a mobile radio system, but is also effective means in a surface acoustic wave device used in a VTR, a CATV converter, a satellite broadcast receiver system, or the like. Nor.
【００２５】[0025]
【発明の効果】本発明によれば、圧電性基板上に、弾性
表面波を送受する入力、及び出力用櫛形電極を有する弾
性表面波装置において、整合用インダクタンスをワイヤ
−により形成するためのインダクタ用電極パタ−ンを形
成し、ワイヤ−によりインダクタンス特性を有する構成
としたことで、リフトオフを必要としない、インダクタ
素子を有する弾性表面波装置の製造方法が提供でき、容
易に、しかも信頼性の高い整合用インダクタが作成可能
である。According to the present invention, an inductor for forming a matching inductance by a wire in a surface acoustic wave device having input and output comb electrodes for transmitting and receiving surface acoustic waves on a piezoelectric substrate. Since the electrode pattern for use is formed and the wire has the inductance characteristic, it is possible to provide a method of manufacturing a surface acoustic wave device having an inductor element, which does not require lift-off, and is easy and reliable. A high matching inductor can be created.
【図１】本発明第１の実施例の平面図である。FIG. 1 is a plan view of a first embodiment of the present invention.
【図２】本発明第１の実施例のＡ−Ａ’面の断面図であ
る。FIG. 2 is a sectional view taken along the line AA ′ of the first embodiment of the present invention.
【図３】本発明のインダクタ用電極パタ−ンを示す図で
ある。FIG. 3 is a diagram showing an inductor electrode pattern of the present invention.
【図４】本発明第２の実施例の平面図である。FIG. 4 is a plan view of a second embodiment of the present invention.
【図５】本発明第２の実施例のＡ−Ａ’面の断面図であ
る。FIG. 5 is a sectional view taken along the line AA ′ of the second embodiment of the present invention.
【図６】本発明を用いた移動無線機のアンテナ分波器を
示す図である。FIG. 6 is a diagram showing an antenna duplexer of a mobile wireless device using the present invention.
１…圧電性基板、２…第１の金属薄膜からなるボンディ
ングパッド、２’…第２の金属薄膜からなるボンディン
グパッド、３…第１の金属薄膜からなるインダクタ用電
極パタ−ン、３’…第２の金属薄膜からなるインダクタ
用電極パタ−ン、４…入力櫛形電極、５…出力櫛形電
極、６…入力リ−ドピン、７…出力リ−ドピン、８…パ
ッケ−ジベ−ス、９…Ａｌワイヤ−、１０…インダクタ
用電極パタ−ンからなる基板、１１…導電性接着剤、１
２…受信フィルタ、１３…送信フィルタ、１４…分岐回
路、１５…アンテナDESCRIPTION OF SYMBOLS 1 ... Piezoelectric substrate, 2 ... Bonding pad made of first metal thin film, 2 '... Bonding pad made of second metal thin film, 3 ... Inductor electrode pattern made of first metal thin film, 3' ... Inductor electrode pattern made of the second metal thin film, 4 ... Input comb-shaped electrode, 5 ... Output comb-shaped electrode, 6 ... Input lead pin, 7 ... Output lead pin, 8 ... Package base, 9 ... Al wire, 10 ... Substrate consisting of inductor electrode pattern, 11 ... Conductive adhesive, 1
2 ... Reception filter, 13 ... Transmission filter, 14 ... Branch circuit, 15 ... Antenna
Claims (6)
力、及び出力用櫛形電極を有する弾性表面波装置におい
て、整合用インダクタンス素子を、上記入力、及び出力
用櫛形電極を形成した圧電性基板上に、ワイヤ−により
形成したことを特徴とする弾性表面波装置。1. A surface acoustic wave device having an input and output comb-shaped electrode for transmitting and receiving a surface acoustic wave on a piezoelectric substrate, a piezoelectric element in which a matching inductance element is formed on the input and output comb-shaped electrodes. A surface acoustic wave device formed by a wire on a flexible substrate.
力、及び出力用櫛形電極を有する弾性表面波装置におい
て、整合用インダクタンス素子を、上記入力、出力用櫛
形電極を形成した圧電性基板とは別途の基板に、ワイヤ
−により形成したことを特徴とする弾性表面波装置。2. A surface acoustic wave device having an input and an output comb-shaped electrode for transmitting and receiving a surface acoustic wave on a piezoelectric substrate, wherein a matching inductance element is formed on the input and output comb-shaped electrodes. A surface acoustic wave device characterized in that it is formed by a wire on a substrate separate from the substrate.
り形成するため、ボンディング用電極パタ−ンを形成し
たことを特徴とする請求項１又は２記載の弾性表面波装
置。3. The surface acoustic wave device according to claim 1, wherein a bonding electrode pattern is formed in order to form the matching inductance element by a wire.
り形成するため、ボンディング用電極パタ−ンがスパイ
ラル状に配置されたことを特徴とする請求項３記載の弾
性表面波装置。4. The surface acoustic wave device according to claim 3, wherein the bonding electrode pattern is arranged in a spiral shape to form the matching inductance element by a wire.
ヤ−がＡｌ、Ａｕからなることを特徴とする請求項１な
いし４のいずれか１項に記載の弾性表面波装置。5. The surface acoustic wave device according to claim 1, wherein the wire forming the matching inductance element is made of Al or Au.
を使用したことを特徴とする移動無線機システム。6. A mobile radio system using the surface acoustic wave device according to claim 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4042807A JPH05243888A (en) | 1992-02-28 | 1992-02-28 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4042807A JPH05243888A (en) | 1992-02-28 | 1992-02-28 | Surface acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05243888A true JPH05243888A (en) | 1993-09-21 |
Family
ID=12646233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4042807A Pending JPH05243888A (en) | 1992-02-28 | 1992-02-28 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05243888A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1137175A2 (en) * | 2000-03-21 | 2001-09-26 | SANYO ELECTRIC Co., Ltd. | Surface acoustic wave device |
| CN102983832A (en) * | 2012-10-31 | 2013-03-20 | 天津大学 | Radio-frequency filter piece packaging structure |
-
1992
- 1992-02-28 JP JP4042807A patent/JPH05243888A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1137175A2 (en) * | 2000-03-21 | 2001-09-26 | SANYO ELECTRIC Co., Ltd. | Surface acoustic wave device |
| EP1137175A3 (en) * | 2000-03-21 | 2004-08-18 | SANYO ELECTRIC Co., Ltd. | Surface acoustic wave device |
| CN102983832A (en) * | 2012-10-31 | 2013-03-20 | 天津大学 | Radio-frequency filter piece packaging structure |
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