JPH05235315A - Semiconductor device - Google Patents

Abstract

PURPOSE:To elevate the quality of a semiconductor device which is made by the mounting method of applying an light to photosetting resin, while adding load, so as to fix it, and taking an electric continuity, after arranging a semiconductor element in the specified position on the transparent substrate 1, where a thick film conductive electrode is made, through the thermosetting insulating resin. CONSTITUTION:A thick Au electrode 2 and the Al electrode 13 made on the element face of a semiconductor element can be abutted on each other even if a semiconductor image sensor 8 is mounted at a certain distance from the end face 15 of a substrate by making the dimension of the Au thick film electrode 2 larger than the quantity of dislocation of the thick film Au electrode 2 from the end face 15 of a glass substrate 1. Hereby, in case of feeling it a manuscript reader, it can be assembled without adjustment.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device such as an image sensor which optically reads original information and converts it into an electric signal, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a document reading device has a structure as shown in FIG. That is, the photoelectric conversion element 48 was mounted on the translucent glass substrate 41 wired with the circuit conductor layer and mounted on the base 49. Inside the base 49, a rod lens array 47 and a light emitting diode array 46 serving as a light source are attached, and the light emitting diode array 46 irradiates a document 45 located below the rod lens array 47 and reflects the reflected light. The light condensed by the rod lens array 47 passes through the transparent glass substrate 41 attached to the base 49 above the rod lens array 47, is received by the photoelectric conversion element 48, and is converted into an electric signal. I was converting. At this time, the photoelectric conversion element 48
If the position of the light receiving portion of the lens shifts from the lens center of the rod lens array 47, the light amount and the resolution are lowered. In order to prevent this, it is necessary to keep the dimension from one end face 50 of the glass substrate 41 to the photoelectric conversion element 48 constant or to adjust the position of the photoelectric conversion element 48 or the rod lens array 47.

On the other hand, as a method of mounting the photoelectric conversion element 48, for the purpose of mounting a high-density multi-terminal, narrow-pitch semiconductor device, an electrode of a circuit board having a conductor wiring is formed by a light or thermosetting insulating resin. A mounting method for contacting and fixing bump electrodes on a semiconductor element is disclosed in Japanese Patent Application Laid-Open No. 2-44742.
It has been proposed by the official gazette. In addition, recently, since the bump electrodes of the semiconductor element are formed by plating with Au or the like, it is expensive, and therefore a mounting method without using bumps has been proposed.

An example of the conventional semiconductor device having no bump will be described below with reference to the drawings.

FIG. 3 is a perspective view of an image sensor manufactured by a conventional mounting method, and FIG. 4 is a sectional view of the main part thereof. Further, FIG. 5 shows a manufacturing process diagram of the translucent circuit board. In FIGS. 3 and 4, 21 is a glass substrate having a light-transmitting property, 22 is a thick film Au electrode formed by a normal screen printing process, and 23 is a circuit conductor layer connected to the thick film Au electrode 22. The circuit conductor layer 23 includes a thick film lower Ag conductor layer 24 connected to the thick film Au electrode 22, a thick film insulating layer 25, and a thick film upper Ag conductor layer 26 connected to an input / output terminal portion to an external circuit. The thick film protective layer 27 is configured to protect the thick film upper Ag conductor layer 26. Reference numeral 28 denotes a semiconductor image sensor chip. The semiconductor image sensor chip 28 includes an element 29 such as an active element and a light receiving element formed by using a semiconductor process, an insulating layer 30, an Al wiring 31 electrically connecting each element 29, and a protection. It is composed of an Al electrode 33 formed on the surface of the layer 32 and the protective layer 32 and connected to the Al wiring 31. Reference numeral 34 is a photo-curable insulating resin for fixing the semiconductor image sensor and for establishing electrical conduction.

A method of manufacturing the image sensor having the above structure will be described below. First, a protective layer 32 and further an Al electrode 3 are formed on a semiconductor element surface on which an element 29 of an active element or a passive element or an Al wiring 31 is formed by using a semiconductor process.
3 to form a semiconductor image sensor chip 28.
Next, the Au paste is applied on the translucent glass substrate 21 in advance by the screen printing method and left at room temperature for leveling. Then, 10 at 120-150 ℃
The film is dried for about a minute and then baked at a temperature of about 500 ° C. to form the thick film Au electrode 22. By repeating the same process, the thick film lower Ag conductor layer 24 and the thick film insulating layer 2 are sequentially formed.
5, the thick film upper Ag conductor layer 26 and the thick film protective layer 27 are formed to form the circuit conductor layer 23. Finally, after formation of these circuit conductor layers 23, scribing is performed to prepare individual translucent circuit boards. Then, a required amount of the translucent ultraviolet curable resin 24 is applied onto the produced translucent circuit board, and the semiconductor image sensor chip 28 is coated with Al on the translucent ultraviolet curable resin 24.
The electrode 23 and the thick film Au electrode 22 are pressed against each other. At this time, the resin 34 on the thick film Au electrode 22 is pushed away, and the thick film Au electrode 22 and the Al electrode 33 are electrically connected. Thereafter, pressure is applied from the side opposite to the element 29 surface of the semiconductor chip 28, the thick film Au electrode 22 and the Al electrode 33 are pressure-bonded, and ultraviolet rays are irradiated from the rear surface of the transparent circuit board to cure the ultraviolet curable resin 34. I do. In this way, the semiconductor image sensor chip 28 is mounted on the translucent circuit board.

[0007]

However, the position of the semiconductor image sensor chip 28 mounted by the above method is not constant from the end surface 35 of the glass substrate 21. Therefore, there is a problem that the position of the glass substrate 41 on which the photoelectric conversion element 48 is mounted needs to be adjusted to align with the center of the lens of the rod lens array 47 in order to make the document reading device.

The reason why the dimension from the end surface 35 of the glass substrate 21 is not constant is the positional deviation of the printing of the thick film Au electrode 22 formed by the ordinary screen printing method, and the most likely cause. This is the positional deviation when scribing is performed after the circuit conductor layer 23 is formed in order to manufacture the translucent circuit board.

The present invention has been made in view of the above problems, and the mounting position of the semiconductor element can be made constant from the end face of the translucent substrate, and the construction method is simplified for a document reading apparatus. The present invention provides a semiconductor device that can be manufactured.

[0010]

In order to solve the above-mentioned problems, a semiconductor device of the present invention is a translucent substrate in which a thick film conductive electrode and a circuit conductor layer connected thereto are formed on a translucent substrate. A circuit board and a semiconductor element is arranged at a predetermined position on the transparent circuit board through a photo-curable insulating resin, and pressure is applied from the opposite side of the element surface of the semiconductor element to a predetermined transparent circuit board. With the thick film conductive electrode and the electrode formed on the element surface of the semiconductor element in contact with each other, light is irradiated from the back surface of the translucent circuit board to cure the photo-curable insulating resin and fix the semiconductor element. ,
In addition, in the electrically connected semiconductor device, the dimension of the thick film conductive electrode is made longer than the displacement of the position of the film conductive electrode which is spaced from the one end of the light transmissive substrate by a predetermined distance. The semiconductor element is arranged at a predetermined distance from one end of the substrate.

[0011]

According to the present invention, by adopting the method described above, the thickness of the translucent circuit board can be maintained even when the transmissive circuit board is mounted with a constant distance from one end face of the translucent board to the semiconductor element at a predetermined interval. The membrane conductive electrode and the electrode formed on the element surface of the semiconductor element can be brought into contact with each other. This solves the conventional problem that it is necessary to adjust the position of the glass substrate 41 on which the photoelectric conversion element 48 is mounted to align it with the lens center of the rod lens array 47 in order to make it a document reading device. ..

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device according to an embodiment of the present invention will be described below with reference to the drawings. Further, the same process as the conventional process will be described with reference to FIG.

FIG. 1 is a perspective view of an image sensor according to an embodiment of the present invention, and FIG. 2 is a sectional view of a main part thereof. 1 and 2, reference numeral 1 is a glass substrate having a light-transmitting property, and 2 is a thick film Au having an uneven surface formed by applying a dedicated Au paste by ordinary screen printing, drying and baking. Reference numeral 3 is an electrode, and 3 is a circuit conductor layer connected to the thick film Au electrode 2. The circuit conductor layer 3 includes a thick film lower Ag conductor layer 4 connected to the thick film Au electrode 2 having irregularities, a thick film insulating layer 5, and a thick film upper Ag conductor connected to an input / output terminal portion to an external circuit. It is composed of a layer 6 and a thick film protective layer 7 for protecting the thick film upper Ag conductor layer 6. Reference numeral 8 denotes a semiconductor image sensor chip, which is an element 9 such as an active element or a light-receiving element formed by using a semiconductor process, an insulating layer 10,
Al wiring 11 for electrically connecting each element 9, protective layer 1
2. Al wiring 11 formed on the surface of the protective layer 12
It is composed of an Al electrode 13 connected to. Reference numeral 14 is a photo-curable insulating tree.

A method of manufacturing the image sensor having the above structure will be described below. First, using a semiconductor process, a light receiving element such as a phototransistor or a photodiode and a CCD are formed on a single crystal silicon substrate (wafer).
A device provided with an element 9 such as an access circuit such as a MOS, a MOS, or a bipolar IC is manufactured. Al wiring 11, protective layer 1
2. The Al electrode 13 uses a double-layer Al wiring process
The l-electrode 13 is formed by sputtering to have a film thickness of about 1 μm. Then, this wafer is cut by a high-precision dicing technique to manufacture the semiconductor image sensor chip 8. Further, the translucent circuit board is manufactured in advance.
As shown in FIG. 2, the transparent substrate of Corning 7059 is used as the glass substrate 1 by the screen printing method, and the exclusive Au particles whose main component is about 1 μm of Au grain system are formed on the glass substrate 1.
The paste is applied and left at room temperature for leveling. Then, after drying at 120 to 150 ° C. for about 10 minutes, firing is performed at a temperature of about 500 ° C. to form the thick film Au electrode 2. At this time, the dimensions of the formed Au thick film electrode 2 are
The end face 1 of the glass substrate 1 which was later scribed into individual pieces
Larger than the amount of dimensional deviation from 5 (0.2 in this embodiment)
mm) to facilitate electrical connection even with a slight misalignment so that it does not deviate from the center of the rod lens array. After that, in the same manner as in the conventional method, the thick film lower part Ag
The conductor layer 4, the thick film insulating layer 5, the thick film upper Ag conductor layer 6, and the thick film protective layer 7 are formed to form the circuit conductor layer 3. Finally, the transparent circuit board is scribed into individual pieces. Next, a predetermined amount of the acrylate-based transparent UV-curable resin 14 is applied to a predetermined position on the transparent circuit board by a stamping method, a screen printing method or the like. Then, the semiconductor image sensor chip 8 is pressed from the end face 15 of the substrate so that the Al electrode 13 and the thick film Au electrode 2 are in contact with each other at a predetermined fixed position. After that, pressure is applied from the side opposite to the element 9 surface of the semiconductor image sensor chip 8, and the thick film A
The u electrode 2 and the Al electrode 13 are pressure-bonded, and ultraviolet rays are irradiated from the back surface of the glass substrate 1 to cure the ultraviolet curable resin 14. At this time, since the thickness of the thick film Au electrode 2 is made larger than the positional displacement of the thick film Au electrode 2 from the end face 15 of the substrate 1, the thick film Au electrode 2 is brought into contact with the Al electrode 3 to electrically connect. Can be obtained. In this way, the semiconductor image sensor chip 8 is mounted on the translucent circuit board.

The image sensor is manufactured as described above. In this image sensor, the light receiving element 9 detects optical information through the glass substrate 1 and the translucent ultraviolet curable resin 14 and converts it into an electric signal.

As described above, according to this embodiment, in a semiconductor device which can be manufactured by a simple mounting method,
An Au thick film electrode 2 formed by a process of forming a thick film Au electrode 2 on a transparent circuit board by a normal screen printing method.
The semiconductor image sensor chip 8 is mounted at a constant distance from the substrate end surface 15 by forming the size of the semiconductor image sensor chip 8 from the end surface 15 of the glass substrate 1 which is later scribed into individual pieces. You can As a result, the original reading device can be assembled without adjustment.

[0017]

As shown in FIG. 1, the size of the Au thick film electrode 2 is made larger than the amount of displacement of the thick film Au electrode 2 from the end face 15 of the glass substrate 1, so that the semiconductor image sensor chip 8 is separated from the end face 15 of the substrate. Even if mounting is performed at regular intervals, the thick film Au electrode and the Al electrode 1 formed on the element surface of the semiconductor element
3 can be brought into contact. As a result, the original reading device can be assembled without adjustment.

As described above, in the semiconductor device of the present invention, the thickness of the translucent circuit board is maintained even when the transmissive circuit board is mounted with the dimension from one end surface of the translucent substrate to the semiconductor element being kept constant at predetermined intervals. Since the film conductive electrode and the electrode formed on the element surface of the semiconductor element can be brought into contact with each other, a simple structure can be realized, and as a document reading apparatus, the position of the glass substrate 3 on which the photoelectric conversion element 2 is mounted is adjusted. It is possible to solve the conventional problem that it is necessary to align with the center of the lens of the rod lens array 6. It is possible to provide a high-quality document reading device without adjustment.

[Brief description of drawings]

FIG. 1 is a perspective view of an image sensor according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a main part of the image sensor in the example.

FIG. 3 is a perspective view of a conventional image sensor.

FIG. 4 is a sectional view of a main part of a conventional image sensor.

FIG. 5 is a manufacturing process diagram of a translucent circuit board of a conventional image sensor.

FIG. 6 is a cross-sectional view of a conventional document reading device.

[Explanation of symbols]

 1, 21 Translucent glass substrate 2, thick film Au electrode 3, 23 Circuit conductor layer 4, 24 Thick film lower Ag conductor layer 5, 25 Thick film insulating layer 6, 26 Thick film upper Ag conductor layer 7, 27 Thick film Protective layer 8, 28 Semiconductor image sensor chip 9, 29 Element 10, 30 Insulating layer 11, 31 Al wiring 12, 32 Protective layer 13, 33 Al electrode 14, 34 Translucent ultraviolet curing insulating resin 15, 35 Glass substrate end surface 22 thick film Au electrode 41 translucent glass substrate 45 original document 46 light emitting diode array 47 rod lens array 48 photoelectric conversion element 49 base 50 substrate end face

Claims (3)

[Claims] 1. A translucent circuit board having a circuit conductor layer on its upper surface and a thick film conductive electrode connected to the circuit conductor layer, and a semiconductor on the upper surface of the translucent circuit board via a photocurable insulating resin. The device has an element, and pressure is applied from the side opposite to the element surface of the semiconductor element, and the thick film conductive electrode and the electrode formed on the element surface of the semiconductor element are brought into contact with each other at a predetermined position of the translucent circuit board. In a semiconductor device in which the semiconductor element is fixed by electrically irradiating the photo-curable insulating resin by irradiating ultraviolet rays in the state of being kept, and the predetermined thickness is provided from one end of the transparent substrate. A semiconductor device, wherein the dimension of the thick film conductive electrode is made longer than the displacement of the position of the film conductive electrode, and the semiconductor element is arranged at a predetermined distance from one end of the transparent substrate. 2. The semiconductor device according to claim 1, wherein an electrode material of the thick film conductive electrode is Au. 3. The semiconductor device according to claim 1, wherein the semiconductor element is an image sensor.