JPH05232504A - Liquid crystal display device - Google Patents

Abstract

PURPOSE:To provide the liquid crystal device which has extremely high display quality and does not malfunction regardless of the incidence of external light. CONSTITUTION:Plural linear light emission sources Y1, Y2,..., Yn are arrayed in a Y direction on one glass substrate and on the light sources, plural linear electrodes X1, X2,..., Xm-1, and Xm are arrayed in an X direction crossing them. Optical switch elements 17 consisting of photoconductor layers are provided adjacently to the intersection parts of the linear light emission sources Y1, Y2,..., Yn and linear electrodes X1, X2,..., Xm, respectively. Optical switch elements 17 are provided between the linear electrodes X1, X2,..., Xm and picture element electrodes 18, respectively. On the other glass substrate, a light shield layer 22 is formed. The light shield layer 22 is so shaped that the optical switch elements 17 and light guides 32 formed on the opposite glass substrate are shielded from light and the areas between the picture element electrodes 18 are shielded from light.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a large capacity matrix type liquid crystal display device.

[0002]

Matrix type liquid crystal display devices (LCD)
In recent years, there has been an increasing demand for larger capacity. That is,
It is required to increase the number of display picture elements from 400 x 600 to 1000 x 1000 or more as the resolution of display devices becomes higher, and the size of the display screen should be increased from 10 inches to 20 inches or more. Is required.

This matrix type LCD is roughly classified into an active matrix drive type LCD and a simple matrix drive type LCD according to the difference in the driving method, and high resolution and large screen are achieved for each.

However, active matrix drive type LCD, especially TFT (thin film transistor) drive type LC
In the case of D, when the resolution is increased and the screen is enlarged, there are the following problems.

Since the writing time per scanning line decreases as the number of scanning lines increases, a larger on-current is required to sufficiently drive the TFT element.

In order to increase the on-current, it is necessary to use a semiconductor material having a high mobility as the semiconductor material forming the TFT element or to increase the W / L (width / length) ratio of the TFT element. Becomes In the former case, it is difficult to make a great improvement because it relates to the characteristics of the material.
In the latter case, extremely fine process control is required, which leads to a large drop in yield.

In addition, as the resolution has increased, the TF for picture elements has been increased.
When the area ratio of the T element increases, the gate-drain capacitance of the TFT element increases as compared with the liquid crystal capacitance. Therefore, the influence of the gate signal on the picture element becomes extremely large.

In order to solve such a problem, a new liquid crystal display device has been proposed by the applicant of the present application (Japanese Patent Application No. 263947/93).

This liquid crystal display device is constructed by disposing a liquid crystal layer between two substrates, and one substrate has a plurality of linear light emitting sources arranged in parallel with each other and a plurality of these linear light emitting sources. Linear electrodes that intersect the linear light emitting source and are arranged in parallel with each other, a plurality of picture element electrodes formed at positions where the linear light emitting source and the linear electrode intersect, and these picture element electrodes, respectively. A photoconductor layer for switching the connection with the corresponding linear electrode by light from a linear light emitting source. The other substrate faces the pixel electrode and includes a counter electrode for driving the liquid crystal layer together with the pixel electrode.

When the linear light emitting source emits light, the photoconductor layer that receives the light is turned on to connect the pixel electrode and the corresponding linear electrode. As a result, the signal voltage applied between the linear electrode and the counter electrode is applied between the pixel electrode and the counter electrode, and each pixel is driven to form an image.

Since this liquid crystal display device uses the optical switching function, the picture element drive current can be easily increased, and the drive voltage ratio is not significantly reduced,
The number of apparent scan lines can be arbitrarily increased.
Further, in this liquid crystal display device, in order to prevent malfunction due to external light, a light-shielding layer for preventing the photoconductor layer and the linear light-emitting source from being irradiated with light is provided at corresponding positions. ..

[0012]

In the above-mentioned liquid crystal display device, since the TN (twist nematic) type or the STN (super twist nematic) type is used as the liquid crystal display mode, the viewing angle is narrow. There is a problem.

This disadvantage of a narrow viewing angle can be solved by using a ferroelectric liquid crystal, and at present, SSF is generally used.
Ferroelectric liquid crystal is used in a display mode called LCD. This display mode utilizes the bistability obtained by reducing the cell thickness to around 2 μm,
A black and white display with a wide viewing angle is realized.

However, there is a problem that white and black are likely to be mixed in a region where voltage is not applied between the picture element electrodes due to the bistable state, and the display quality is remarkably deteriorated.

Therefore, the present invention provides a liquid crystal display device which has extremely high display quality and does not malfunction due to incidence of external light.

[0016]

A liquid crystal display device comprising a liquid crystal layer provided between two substrates each having an electrode, and a plurality of picture element electrodes for driving each picture element of the liquid crystal layer, A plurality of linear light emitting sources in which one of two substrates is arranged in parallel with each other, a plurality of linear electrodes arranged in parallel with each other in a direction intersecting with the plurality of linear light emitting sources, and a plurality of linear light emitting sources And a plurality of photoconductor layers which are provided at positions where the plurality of linear electrodes intersect with each other and which perform a switching operation by light from a linear light emitting source, and the other of the two substrates is a plurality of pixel electrodes. The liquid crystal layer is provided with a light-shielding layer provided to face the area between the photoconductive layer and the linear light source, and the signal applied to the pixel electrode via the linear electrode and the photoconductive layer. Each of the picture elements is driven.

[0017]

When a plurality of linear light emission sources sequentially emit light, the impedance of the photoconductor layer to which the light is applied decreases and the photoconductor layer becomes conductive. As a result, the signal from the linear electrode is applied to the picture element electrode through the photoconductor layer and is transmitted to the picture element of the liquid crystal layer. Since the photoconductor layer to which light is not applied remains in the non-conducting state, the signal from the linear electrode is not transmitted to the picture element of the liquid crystal layer. Thus, the photoconductor layer performs a switching operation like an active element. A light-shielding layer is provided on the other of the two substrates so as to face the region between the plurality of pixel electrodes, the photoconductor layer, and the linear light-emitting source. When the light is transmitted to the picture elements of the layer, the light-shielding layer can prevent light from leaking in the area between the picture element electrodes, so that the brightness in the area between the picture element electrodes is constant and the display quality is extremely high. A high-quality image can be obtained, and the external light with respect to the linear light-emitting source and the photoconductor layer is blocked to improve the light-shielding property, so that no malfunction occurs.

[0018]

Embodiments of the present invention will be described below with reference to the drawings.

1 and 2 show an active matrix drive type LC which is a first embodiment of a liquid crystal display device according to the present invention.
It is a top view which shows the structure of D, and FIG. 3 is these AA line sectional drawings.

In the plan view shown in FIG. 1, the glass substrate 11b, the alignment layers 20a and 20b, the transparent electrode 2 shown in the sectional view of FIG.
1, the sealing material 23 and the liquid crystal layer 24 are omitted, and the light shielding layer 2
2, the optical switch element 17, the pixel electrode 18, and the optical waveguide 32
The positional relationship with is shown. In the plan view shown in FIG.
Glass substrate 11b, alignment layers 20a and 20 shown in the cross-sectional view of FIG.
b, the transparent electrode 21, the light shielding layer 22, the sealing material 23 and the liquid crystal layer 24 are omitted.

As shown in these figures, a plurality of linear light emitting sources Y ₁ , Y ₂ , ..., Y _n are provided on one glass substrate 11a.
Are arrayed along the Y direction, and a plurality of linear electrodes X ₁ , X ₂ , ..., X _m-1 , X _m are arrayed along the X direction so as to intersect therewith.

Each of the linear light emission sources Y ₁ , Y ₂ , ..., Y _n , for example, the linear light emission source Y ₂ is provided with a light emitting portion 31 provided below the electrode 16 by an electroluminescence (EL) element or the like.
And a linear optical waveguide 32 for transmitting the light from the light emitting section 31, and by causing the light emitting section 31 to emit light, linear light is emitted from the entire linear light emitting source Y ₂ . It is also possible to use the entire linear light emitting sources Y ₁ , Y ₂ , ..., Y _n as the light emitting section.

The light emitting portion 31 and the optical waveguide 32 are formed as follows.

First, an aluminum (Al) layer is formed on a glass substrate 11a by an electron beam (EB) vapor deposition method, and then an etching process is performed to form an electrode 12. The electrode 12 has a plurality of thin stripe shapes arranged in parallel, and serves as an electrode,
It also serves to prevent light (external light) from below the element from entering the photoconductor layer formed above, that is, also serves as a light shielding layer.

Next, on the glass substrate 11a and the electrode 12,
The lower insulating layer 13 is formed. This lower insulating layer 13 is made of silicon dioxide (SiO ₂ ) or disilicon trinitride (Si ₂ N ₃ ).
And the like are deposited by sputtering.

Next, the light emitting layer 14 is laminated on the lower insulating layer 13. The light emitting layer 14 is formed of manganese (M
n) 0.5% added to form a zinc sulfide (ZnS) layer,
Further, it is formed by subjecting the ZnS layer to vacuum heat treatment and linear patterning by etching.

When the light emitting layer 14 is provided with a cut 14e during this etching, the amount of light emitted to the outside of the light emitting layer 14 is increased and the light utilization rate can be increased.

Next, the upper insulating layer 15 is formed on the light emitting layer 14. The upper insulating layer 15 is formed by depositing Si ₂ N ₃ or aluminum oxide (Al ₂ O ₃ ) on the light emitting layer 14 by sputtering. Then the upper insulating layer
An electrode 16 is formed on the upper end of the electrode 15. This electrode 16 is formed by EB vapor-depositing an Al layer on the end portion on the upper insulating layer 15.

In addition to Al, a metal such as molybdenum (Mo) may be used as the electrodes 12 and 16, and tin oxide-doped indium oxide (ITO) may be used as the electrode 16. As the lower insulating layer 13 and the upper insulating layer 15, Si is used.
In addition to O ₂ , Si ₂ N ₃ and Al ₂ O ₃ , silicon nitrides (S
iN _x ), strontium titanate (SrTiO ₃ ),
Barium tantalate (BaTa ₂ O ₆₎ or the like may be used. Further, as the light emitting layer 14, zinc selenide (ZnSe) or the like may be used instead of ZnS.

The linear light-emitting source Y _1, Y _2, ..., Y _n and the linear electrodes X _1, X _2, ..., to the intersection of the X _m, i.e. the linear light-emitting source Y _1, Y _2, ... , Y _n and the linear electrodes X ₁ , X ₂ , ...,
Optical switch elements 17 each composed of a photoconductor layer are provided adjacent to the intersection with X _m . Linear electrode X ₁ ,
X _2, ..., the pixel electrode 18 for driving a display medium consisting of X _m and the liquid crystal or the like are formed on the same plane, the linear electrodes X _1, X _2, ..., X _m and the pixel Optical switch elements 17 are provided between the electrodes and the electrodes 18, respectively.

The photoconductor layer is a hydrogenated amorphous silicon (a-Si: H) film formed by plasma chemical vapor deposition (CV).
It is formed by using D) and patterning. After that, as the linear electrodes X ₁ , X ₂ , ..., X _m , a metal such as Al is vapor-deposited by the EB vapor deposition method and patterned. Next, ITO is deposited by sputtering and patterned to form a pixel electrode 18.

When light is applied to the optical switch element 17, the electric resistance of the optical switch element 17 is reduced, and therefore the signal from the linear electrode X ₁ is applied to the pixel electrode 18.

An orientation layer 20a is formed on these layers. The alignment layer 20a is formed by rubbing a polyimide film formed by a spinner.

On the other glass substrate 11b, Al is EB
After forming by the vapor deposition method, the light shielding layer 22 is formed by patterning the shape shown in FIG. 3 by etching.

The light-shielding layer 22 is provided so as to face the region between the optical switch element 17, the optical waveguide 32 and the pixel electrode 18 formed on the glass substrate 11a, and as shown in FIG. It is formed so as to shield the optical switch element 17 and the optical waveguide 32 from light and to shield the region between the picture element electrodes 18 from each other.

As the light shielding layer 22, in addition to Al, a metal such as Mo, an organic pigment dispersion type resin, or an inorganic pigment dispersion type resin may be used.

Next, the transparent electrode 21 is formed by depositing ITO by the sputtering method.

Further, an alignment layer 20b is formed on the light shielding layer 22 and the transparent electrode 21. The alignment layer 20b is formed by rubbing a polyimide film formed by spin coating.

Spacers (not shown) are dispersed between the substrates on which the respective layers have been formed in this manner, and the two substrates are bonded to each other via the seal material 23. Liquid crystal is injected in the meantime to fill the liquid crystal layer 24.
Is configured.

The liquid crystal layer 24 has a thickness of about 2 μm, and the display mode is SSFLCD. As the liquid crystal material, for example, ferroelectric liquid crystal CS-1014 manufactured by Chisso Corporation is used, and the liquid crystal layer 24 is formed by vacuum injection.

Glass substrates 11a and 11b are examples of the two substrates of the present invention. The optical switch element 17 is an example of the photoconductor layer of the present invention. The pixel electrode 18 is an example of the pixel electrode of the present invention. The light shielding layer 22 is an example of the light shielding layer of the present invention. The liquid crystal layer 24 is an example of the liquid crystal layer of the present invention. The linear light emitting sources Y ₁ , Y ₂ , ..., Y _n are examples of a plurality of linear light emitting sources of the present invention. Linear electrodes X ₁ , X ₂ ,
, X _m are examples of the plurality of linear electrodes of the present invention.

The linear light-emitting source Y _1, Y _2, ..., a Y _n is optically scanned by sequentially emitting from Y ₁ to Y _n, the linear electrodes X _1, X ₂ an electrical signal in response thereto, ..., Y _m-1 , X
applied to _m . , Y _n while the linear light emitting sources Y ₁ , Y ₂ , ..., Y _n are emitting light, the optical switching elements on the linear light emitting sources are in the ON state, so that the linear electrodes X ₁ , X ₂ ,. _m-1 ,
An electric signal from X _m is applied to each picture element electrode to display an image.

As described above, in this embodiment, since the SSFLCD is used as the display mode, the viewing angle is greatly improved. Further, since the light-shielding layer 22 for preventing light leakage in the area between the picture element electrodes is provided, the brightness in the area between the picture element electrodes becomes constant, and an image of extremely high display quality can be obtained. Further, external light does not irradiate the linear light emitting source or the photoconductor layer to cause a malfunction.

FIGS. 4 and 5 show an active matrix drive type LC which is a second embodiment of the liquid crystal display device according to the present invention.
It is a top view which shows the structure of D, and FIG. 6 is these BB sectional drawing.

In the plan view shown in FIG. 4, the glass substrate 41b, the alignment layers 48a and 48b, the transparent electrode 4 shown in the sectional view of FIG.
9, the sealing material 50 and the liquid crystal layer 51 are omitted, and the light shielding layer 4
2b, the optical switching element 46, the pixel electrode 47, and the optical waveguide 63
The positional relationship with is shown. In the plan view shown in FIG.
The glass substrate 41b, the light shielding layer 42b, the alignment layers 48a and 48b, the transparent electrode 49, the sealing material 50, and the liquid crystal layer 51 shown in the sectional view of FIG.
Is omitted.

As shown in these figures, a plurality of linear light emitting sources Y ₁ , Y ₂ , ..., Y _n are arranged on one of the glass substrates 41a along the Y direction, and on top of these are arranged. A plurality of linear electrodes X ₁ , X ₂ , ..., X _m−1 , X _m are arranged to intersect each other along the X direction.

Each of the linear light emitting sources Y ₁ , Y ₂ , ..., Y _n has a light emitting portion composed of a light emitting diode (LED) array 61 and an optical fiber array 62, and a linear light transmitting portion for transmitting light from the light emitting portion. It is composed from the optical waveguide 63, by causing the light emitting portion, the linear light-emitting source _{Y 1, Y 2, ...,} Y n
Line-shaped light is emitted from each of the whole. The linear light sources Y ₁ , Y ₂ , ..., Y _n may be entirely composed of a light emitting section.

The optical waveguide 63 is formed as follows.

First, an Al layer is EB on the glass substrate 41a.
The light shielding layer 42a is formed by the vapor deposition method. The light-shielding layer 42a is provided to prevent light (outside light) from below the element from entering the photoconductor layer formed above.
The pattern of 42a is formed so as to match the pattern of the photoconductor layer.

In addition to Al, a metal such as Mo, an organic pigment-dispersed resin, or an inorganic pigment-dispersed resin may be used as the light-shielding layer 42a.

Further, in this embodiment, the light shielding layer 42a is formed in the same pattern as that of the photoconductor layer. However, as in the first embodiment shown in FIG. 3, the electrode 12 serving as the light shielding layer is formed. Alternatively, it may be formed in a stripe shape.

Next, an epoxy resin is coated as a clad layer 43 on the glass substrate 41a and the light shielding layer 42a by a spinner, and bisphenol-Z-containing a photopolymerizable monomer (acrylate, for example, methyl acrylate) thereon. A polycarbonate (PCZ) film is formed by a solution casting method. Here, by selectively polymerizing through a line-shaped photomask, the PCZ portion as the core layer 44 and a portion made of a mixture of PCZ and polyacrylate having a refractive index smaller than that of PCZ are formed in stripes. Further, by coating the surface layer 45 with an epoxy resin, the optical waveguide 63 is formed.

The surface of the optical waveguide 63 is slightly scratched by performing etching or the like in accordance with the optical switch element portion so that the optical switch element is irradiated with light.

As the optical waveguide, other than this, a glass waveguide formed by an ion exchange method or the like may be used, or another waveguide may be used.

The LED array 61 and the optical waveguide 63 are connected by the optical fiber array 62 in this embodiment. Instead of the optical fiber array 62, a SELFOC lens or the like may be used.

[0056] linear light-emitting source Y _1, Y _2, ..., Y _n and the linear electrodes X _1, X _2, ..., to the intersection of the X _m, i.e. the linear light-emitting source Y _1, Y _2, ... , Y _n and the linear electrodes X ₁ , X ₂ , ...,
Optical switch elements 46 each composed of a photoconductor layer are provided adjacent to the intersection with X _m . Linear electrode X ₁ ,
X _2, ..., the pixel electrode 47 for driving a display medium consisting of X _m and the liquid crystal or the like is formed on the surface layer 45, the linear electrodes X _1, X _2, ..., and X _m Optical switch elements 46 are provided between the picture element electrodes 47, respectively.

This photoconductor layer is formed by forming an a-Si: H film by plasma CVD and patterning it. Then, the linear electrodes X ₁ , X ₂ , ..., X _m
As a metal, a metal such as Al is vapor-deposited by the EB vapor deposition method and patterned. Then, ITO is deposited by sputtering and patterned to form the pixel electrode 47.

When light is applied to the optical switch element 46, the electrical resistance of the optical switch element 46 decreases, and therefore the signal from the linear electrode X ₁ is applied to the pixel electrode 47.

An orientation layer 48a is formed on these layers. The alignment layer 48a is formed by rubbing a polyimide film formed by a spinner.

On the other glass substrate 41b, a light shielding layer 42b is formed by using an organic pigment dispersion type resin. That is, first, a color mosaic (manufactured by Fuji Hunt) is applied on the glass substrate 41b by a spin coating method, and then prebaking is performed. Next, the oxygen barrier film is applied and baked, and then exposed.
After a predetermined development process, by performing a host bake,
The light shielding layer 42b is formed in the shape shown in FIG.

The light shielding layer 42b is provided so as to oppose the region between the optical switch element 46, the optical waveguide 63 and the pixel electrode 47 formed on the glass substrate 41a, and as shown in FIG. The optical switch element 46 and the optical waveguide 63 are shielded from light, and the region between the picture element electrodes 47 is shielded.

As the light shielding layer 42b, an inorganic pigment dispersion type resin or a metal such as Al or Mo may be used.

Next, the transparent electrode 49 is formed by depositing ITO by the sputtering method.

Further, an alignment layer 48b is formed on the light shielding layer 42b and the transparent electrode 49. The alignment layer 48b is formed by rubbing a polyimide film formed by spin coating.

Spacers (not shown) are dispersed between the substrates on which the respective layers have been formed in this manner, and the two substrates are bonded to each other via the seal material 50. Liquid crystal is injected in the meantime to fill the liquid crystal layer 51.
Is configured.

The thickness of the liquid crystal layer 51 is about 2 μm, and the display mode is SSFLCD. As the liquid crystal material, for example, ferroelectric liquid crystal CS-1014 manufactured by Chisso Corporation is used, and the liquid crystal layer 51 is formed by vacuum injection.

Glass substrates 41a and 41b are examples of the two substrates of the present invention. The light shielding layer 42b is an example of the light shielding layer of the present invention. Optical switch element 46 is an example of the photoconductor layer of the present invention. The pixel electrode 47 is an example of the pixel electrode of the present invention. The liquid crystal layer 51 is an example of the liquid crystal layer of the present invention. The linear light emitting sources Y ₁ , Y ₂ , ..., Y _n are examples of a plurality of linear light emitting sources of the present invention. Linear electrode X ₁ ,
X ₂ , ..., X _m are examples of the plurality of linear electrodes of the present invention.

[0068] linear light-emitting source Y _1, Y _2, ..., a Y _n is optically scanned by sequentially emitting from Y ₁ to Y _n, the linear electrodes X _1, X ₂ an electrical signal in response thereto, ..., Y _m-1 , X
applied to _m . , Y _n while the linear light emitting sources Y ₁ , Y ₂ , ..., Y _n are emitting light, the optical switching elements on the linear light emitting sources are in the ON state, so that the linear electrodes X ₁ , X ₂ ,. _m-1 ,
An electric signal from X _m is applied to each picture element electrode to display an image.

As described above, in this embodiment, since the SSFLCD is used as the display mode, the viewing angle is greatly improved. Further, since the light shielding layer 42b for preventing light leakage in the area between the picture element electrodes is provided, the brightness in the area between the picture element electrodes is constant, and an image of extremely high display quality can be obtained. Further, external light does not irradiate the linear light emitting source or the photoconductor layer to cause a malfunction.

As the glass substrate 41a of this embodiment,
Fiber plates may be used, in which case a light blocking layer
When forming 42a, it is not necessary to consider the light obliquely incident on the glass substrate 41a, and the size of the light shielding layer 42a may be determined so as to shield only the light incident perpendicularly to the glass substrate 41a. ..

In the first and second embodiments described above, the case where SSFLCD is used as the display mode has been described. However, the liquid crystal layer is made of nematic liquid crystal, and color display is performed in the TN type or STN type display mode. In the case of carrying out, in the same manner as in the above-mentioned embodiment, a light-shielding layer is formed so as to shield the photoconductor layer and the optical waveguide formed on the opposing substrate and shield the region between the pixel electrodes of the color filter. It may be provided.

Even in this case, since the light-shielding layer is provided, therefore, it is possible to realize an image display with extremely high color definition and to irradiate the photoconductor layer and the optical waveguide with external light. Therefore, malfunction does not occur.

[0073]

As described above, the present invention provides a liquid crystal including a liquid crystal layer provided between two substrates each having an electrode, and a plurality of picture element electrodes for driving each picture element of the liquid crystal layer. In the display device, a plurality of linear light emitting sources in which one of two substrates is arranged in parallel with each other, and a plurality of linear electrodes arranged in parallel with each other in a direction intersecting with the plurality of linear light emitting sources,
A plurality of linear light-emitting sources and a plurality of linear electrodes, each of which is provided at a position where the linear light-emitting sources intersect with each other;
The other of the two substrates is provided with a region between a plurality of pixel electrodes, a photoconductor layer, and a light-shielding layer provided so as to face the linear light-emitting source. Each pixel of the liquid crystal layer is driven by a signal applied to the element electrode. Therefore, the brightness in the area between the pixel electrodes becomes constant, and an image with extremely high display quality can be obtained.
Moreover, malfunction does not occur due to the external light being applied to the linear light emitting source or the photoconductor layer.

[Brief description of drawings]

FIG. 1 is a plan view showing a configuration of an active matrix drive type LCD which is a first embodiment of a liquid crystal display device according to the present invention.

FIG. 2 is another plan view showing the configuration of the active matrix drive type LCD which is the first embodiment of the liquid crystal display device according to the present invention.

FIG. 3 is a sectional view taken along the line AA in FIGS. 1 and 2.

FIG. 4 is a plan view showing a configuration of an active matrix drive type LCD which is a second embodiment of the liquid crystal display device according to the present invention.

FIG. 5 is another plan view showing the configuration of the active matrix drive type LCD which is the second embodiment of the liquid crystal display device according to the present invention.

FIG. 6 is a cross-sectional view taken along the line BB of FIGS. 4 and 5.

[Explanation of symbols]

11a, 11b, 41a, 41b Glass substrate 12, 16 Electrode 13 Lower insulating layer 14 Light emitting layer 15 Upper insulating layer 17, 46 Optical switch element 18, 47 Picture element electrode 20a, 20b, 48a, 48b Alignment layer 21, 49 Transparent electrode 22,42a, 42b light shielding layer 23 and 50 a sealing material 24, 51 liquid crystal layer 31 emitting portion 32,63 optical waveguide 43 cladding layer 44 a core layer 45 surface layer 61 LED array 62 an optical fiber array _{X 1, X 2, ...,} X _m linear electrodes Y ₁ , Y ₂ , ..., Y _n linear light emitting sources

Claims (1)

[Claims] 1. A liquid crystal display device comprising a liquid crystal layer provided between two substrates each having an electrode, and a plurality of picture element electrodes for driving each picture element of the liquid crystal layer. A plurality of linear light emitting sources in which one of the substrates is arranged in parallel with each other, a plurality of linear electrodes arranged in parallel with each other in a direction intersecting with the plurality of linear light emitting sources, and the plurality of linear light emitting sources And a plurality of photoconductor layers which are respectively provided at positions where the plurality of linear electrodes intersect with each other and which perform switching operation by light from the linear light emitting source, and the other of the two substrates is the plurality of A region between the picture element electrodes, a light shielding layer provided to face the photoconductor layer and the linear light emitting source, and the picture element through the linear electrode and the photoconductor layer. Each pixel of the liquid crystal layer is driven by a signal applied to an electrode A liquid crystal display device characterized by being provided.