JPH05226632A - Semiconductor device - Google Patents

Abstract

PURPOSE:To continue a normal operation at a high speed and increase freedom for selecting materials for an optical element by detecting abnormality of a light-emitting element with a light-reception element, providing a function for continuing the normal operation by switching to another light-emitting element on a semiconductor integrated circuit, and then burying the light-emitting element into a semiconductor integrated circuit. CONSTITUTION:Emission of a regular laser diode 4 is driven by a control circuit 2, the emission signal enters an optical waveguide 5 though a grating 6, and is output to an optical fiber 7 from the end face. Also, the other end face of the optical waveguide 5 is directed toward a photodiode 3 and an emission signal of the regular laser diode 4 is constantly received and detected. In the case of detection of an abnormality, the control circuit 2 stops driving of emission of the regular laser diode 4, drives emission of a spare laser diode 4a, and then transmits data continuously. Also, when a light-emitting element or a light-reception element is buried into a semiconductor integrated circuit device, an optical element according to an arbitrary material such as GaAs can be integrated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which an optical element and a semiconductor integrated circuit are integrated. More specifically, the present invention relates to a semiconductor device having a mechanism for preventing the system from stopping its function when a failure occurs in the integrated optical element.

[0002]

2. Description of the Related Art Conventionally, as a technique for providing a plurality of optical elements and avoiding a functional stop caused by a failure of the optical elements, Japanese Patent Laid-Open Nos. 60-15988 and 60-84892, Sho 60
-89990, etc.

[0003]

In a large-scale integrated circuit device, optical devices (light emitting and light receiving devices), which are different from the typical device of the integrated circuit device, are fused to form an optical interconnect system. A semiconductor device to be formed is known. In this case, as a point to be considered in order to operate the system stably, it is necessary to take measures to consider the life of the optical element. Since this optical interconnect system is usually applied to the place where data is transmitted at high speed,
The position in the system is extremely high. In such a place, it is necessary to consider measures so that the system can continue to operate regardless of any failure of the light emitting element. Recently, the scale of integrated circuits has been remarkably increased, and it is considered that the conventional large-scale computer system can be integrated into one chip unit. In this case, such an integrated functional component is expected to operate with extremely high reliability. This is because the processing of data is extremely fast and large in volume, and when the system fails, the range of influence is extremely large. Therefore, it is necessary to have a self-failure recovery function for eliminating the failure and continuing the processing.

This concept itself is a new concept that is indispensable in such a highly integrated system, but in order to realize this concept, especially in an optical interconnect system, to obtain a self-failure recovery function, the present invention is effective. It is intended to provide such a means.

In the above-mentioned prior art, since a plurality of light emitting elements and light receiving elements are formed by a monolithic optical integrated circuit, there is a problem that the manufacturing yield is likely to be deteriorated due to an increase in the number of elements. Further, there is a problem that the function is stopped when the spare optical element also fails.

[0006]

[Means for Solving the Problems] In order to solve the above-mentioned problems, a means of the present invention is to provide a plurality of light emitting elements and at least a plurality of light emitting elements on a semiconductor integrated circuit in which functional elements formed by silicon semiconductor technology are integrated. A light-receiving element for monitoring light emission of the one light-emitting element, and when it detects that at least one of the light-emitting elements does not operate normally, another light emission different from the light-emitting element on the semiconductor integrated circuit is detected. A semiconductor device having a function of switching to an element and continuing normal operation, wherein the light emitting element is formed by being embedded in the semiconductor integrated circuit.

Further, in the semiconductor device, when it is detected that both the light emitting element and the other light emitting element do not operate normally, the electric circuit is switched to an electric circuit which equivalently transmits the same information, and the normal operation is performed. A semiconductor device having a function of continuing.

[0008]

The semiconductor device according to the present invention is a light emitting element or a light receiving element which is connected to the main surface of the device or is embedded in the semiconductor integrated circuit device in which the functional elements formed by the silicon semiconductor technology are integrated. An element is provided with a plurality of light emitting elements in a system in which the element is connected to the device by wiring or a focused ion beam and optical CVD technology, etc., and the operation of the light emitting element is monitored for normal operation of one light emitting element. When a light-receiving element is provided in a device in which a functional element formed by the same silicon semiconductor technology is integrated and detected, a device in which the functional element formed by the same silicon semiconductor technology is integrated is detected separately from the light emitting element. A device in which a functional element formed by the silicon semiconductor technology as described above is integrated with another provided light emitting element. By the control circuit provided, in which switching.

Therefore, according to the present invention, even if a failure occurs in the optical element, normal operation can be continued at high speed.
Further, when all the light emitting elements become abnormal, the system down can be prevented by holding the electric paths that equivalently transmit the same information.

When the light emitting element or the light receiving element is embedded in the semiconductor integrated circuit device, the degree of freedom in selecting the material of the optical element is increased, unlike the case of the above-mentioned conventional monolithic device. You can Therefore, an optical element made of any material such as GaAs can be integrated on an integrated circuit using silicon.

By embedding, the surface of the semiconductor device in which the optical elements are fused can be formed flat.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a structural example of the present invention. A regular laser diode 4, a spare laser diode 4a, and a photodiode 3 are attached to a highly integrated processor chip 1 made of a silicon device by solder bumps or embedding. The control circuit 2 is provided in the silicon device by the normal laser diode connection signal 8a, the spare laser diode connection signal 8b, and the photodiode connection signal 8c.
It is connected to the. The regular laser diode 4 and the spare laser diode 4a are an optical waveguide 5 having a grating 6.
And the photodiode 4 is attached to the end face position of the optical waveguide. Further, one end face of the optical waveguide is connected to the optical fiber 7.

The operation in the configuration example of FIG. 1 will be described with reference to FIG.
An operation example of the present invention will be described. First, the control circuit 2 drives the normal laser diode to emit light. This light emission signal enters the optical waveguide 6 through the grating 6 and is output to the optical fiber 7 from the end face thereof. Also, the other end face of the optical waveguide 6 is toward the photodiode 4,
The light emission signal of the regular laser diode is always received by this photodiode. Therefore, when the light emission of the regular laser diode is stopped, the light emission amount is reduced, or the light emission operation becomes unstable, the light emission is detected by this photodiode. When such abnormality detection of the regular radar diode is performed by the photodiode and the control circuit 2, the control circuit 2 stops the emission drive of the regular laser diode. Next, the preliminary laser diode 4a is driven to emit light, and data transmission is continued. The time to switch from the normal laser diode emission stop to the standby laser diode emission depends on the control method and the performance of the control circuit, but it can be switched in real time, data can be retransmitted from a slightly previous state, or various selections can be made. Is possible.
Here, one spare laser diode is shown as one structure, but two or more spare laser diodes can be attached to further increase the reliability. In order to increase the responsiveness of the control circuit, high speed operation can be performed by arranging the laser diode and the photodiode close to the control circuit. Also, here, the method of connecting the optical waveguide and the laser diode by a grating couple is shown as an example, but a method of using the mirror reflection surface of the optical waveguide or directly connecting the laser diode and the optical fiber is also used. You can choose.

FIG. 3 shows an embodiment of the present invention. The processor chip 43 made of a silicon device has a regular laser diode 42, a spare laser diode 48, a photodiode 46, and an optical waveguide 44 with a grating 45.
Is installed. The control circuit 40 is the processor chip 4
Is formed in. A connection wiring 47 is formed to connect the normal laser diode 42, the spare laser diode 48, the photodiode 46 and the control circuit 40. The connection wiring is formed by photolithography or light C used in a normal semiconductor manufacturing process.
This is done by VD technology or by solder bumps. The optical fiber 42 is connected to an end face of a wave path 44 that guides light.

FIG. 4 is a diagram showing an embodiment of the control circuit of the present invention. In this circuit, the output Q of the flip-flop circuit 32 becomes the preliminary laser diode selection signal 38 and enters the first AND gate 35, and the output NQ becomes the normal laser diode selection signal 39 and the second AND gate 35.
Enter a. In a normal state, the normal laser diode abnormality detection signal 31 from the photodiode is at a low level, and the output Q of the flip-flop circuit is at a low level and NQ is at a high level by the clock signal 33 entering the flip-flop circuit 32, and the transmission signal 34 is transmitted. Is output to the regular laser diode drive signal 37 through the second AND gate 35a. In the abnormal state, the normal laser diode abnormality detection signal 31 from the photodiode becomes high level, the output Q of the flip-flop circuit 32 becomes high level by the clock signal 33, and NQ becomes low level, so that the transmission signal 34 becomes the first AND gate 35. Through the auxiliary laser diode drive signal 36. Therefore, by using this control circuit, the switching from the normal laser diode to the backup laser diode can be controlled by the clock signal input to the flip-flop circuit 32, and the switching can be performed at high speed and stably. This control circuit is realized by a silicon device, and the laser diode and photodiode can be the same single functions as before, so each element can use the latest process that maximizes the efficiency of light emission and light reception. It is possible to use an extremely high performance optical element without a large financial burden.

FIG. 5 is a diagram showing an embodiment of the present invention.
Regular laser diode 51, spare laser diode 5
7. The photodiode 54 is embedded in the silicon substrate 50 forming a silicon device. An optical waveguide 53 is formed on it, which is also connected to an optical fiber 55. The normal laser diode 51, the spare laser diode 57, and the photodiode 54 are respectively
A control circuit 56 and a control signal 51 formed on the silicon substrate 50 are wired. The laser diode used here is a surface emitting type.

FIG. 6 shows a cross section of an embodiment for embedding an optical device such as a laser diode in the embodiment shown in FIG. Silicon substrate 6
A part of 3 is removed to embed the optical element device 61, and the plastic resin 62 is filled between the silicon substrate 63 and the optical element device 61. The silicon substrate 63 is made of silicon-on-insulator, and the oxide film 66 of the silicon-on-insulator functions as a layer for stopping the chemical etching when the silicon is removed from the silicon substrate 63 by chemical etching or other means. After part of the silicon substrate 63 is removed by chemical etching to incorporate the optical element device 61 and the plastic resin 62 is filled, it is connected by the focused ion beam and photo CVD by the connection conductor 64, and the upper surface of silicon is removed and An optical waveguide is formed on. The optical element device 61 may be a surface emitting laser diode, and the laser light 68 is emitted from the fused device surface and reflected at the tip of the optical waveguide.
Light is transmitted. This waveguide is formed before removing the silicon back surface, but since the silicon etch protects the silicon etch by the oxide film 66 of the silicon-on-insulator, the optical waveguide is not destroyed or it interferes with the optical element device. There is no.

FIG. 7 is a plan view showing an embodiment for embedding an optical device such as a laser diode. An example of wiring and a waveguide is shown. Since the wiring and the waveguide are separate layers, they may be laid out in a cross manner. A silicon device and a wiring layer 65 are formed on the oxide film 66, and can be sufficiently close to the optical device 61. The silicon device and wiring layer 65 can be connected to the optical element device 61 at a low temperature by drilling with a focused ion beam and filling a metal conductor with photo CVD. The wiring 65 is connected to another silicon device on the silicon substrate and the optical element device 61. According to this method, after all the silicon devices on the silicon substrate and wiring are completed, the silicon is etched and the plastic resin filled between the silicon substrate and the optical device is heat-resistant to incorporate the optical device. It is possible to select a material that does not require and to improve reliability. Further, as compared with the conventional method of punching out a silicon substrate, since the surface is not processed at all, the wiring is protected, it is not necessary to consider the alignment accuracy when forming the wiring, and it is not necessary to flatten the groove. In addition, since the optical element device and the silicon device are vertically connected by the focused ion beam and the photo-CVD, they are connected in the shortest distance, and the wiring resistance and the wiring capacitance are minimized, compared to the conventional flip-chip connection by wire bonding or soldering. , The electric load is lightest and high speed operation is possible.

FIG. 8 is a diagram showing another configuration example of the present invention. The present invention is to provide a highly reliable optical interconnect chip. However, in the worst case, a measure is considered on the assumption that all the light emitting devices cause a failure and optical data transfer becomes impossible. There is a need. In the present invention, a configuration example in consideration of such a point will be described. The processor chip 82 includes a regular laser diode 83, a spare laser diode 87, and a photodiode 8.
8. When the optical waveguide 86 with the grating 84 is attached and the regular laser diode 83 becomes abnormal by the control circuit 81, the spare laser diode 87 is switched to and an optical signal is output to the optical fiber 85. If it is made possible to detect that the laser diode is also in an abnormal state, in this case, the control circuit 81 transmits data similar to light through the electric transmission line. Generally, due to the characteristics of electrical signals, when the same number of signals as light, the data transmission speed will be lower than that of light, but it is possible to prevent the worst system down where data cannot be transferred at all, so it is extremely reliable. It is possible to build a high-quality system.

FIG. 9 shows an example of a control circuit in another example of the configuration of the present invention shown in FIG. In this circuit, the output Q of the flip-flop circuit 92 becomes the spare laser diode selection signal 93 and enters the first AND gate 95, and the output NQ becomes the normal laser diode selection signal 99 and enters the second AND gate 97. enter. In the normal state, the normal laser diode abnormality detection signal 91 from the photodiode is low level, the output Q of the flip-flop circuit becomes low level and NQ becomes high level by the clock signal input to the flip-flop circuit 92, and the transmission signal 94 becomes Second
And is output to the regular laser diode drive signal 98 through the AND gate 97 of FIG. In the abnormal state, the normal laser diode abnormality detection signal 91 from the photodiode becomes high level, the output Q of the flip-flop circuit 92 becomes high level and NQ becomes low level by the clock signal, so the transmission signal 94 is transmitted through the first AND gate 95. It is output to the spare laser diode drive signal 96. Further, when the spare laser diode becomes abnormal and the spare laser diode abnormality detection signal 100 becomes high level, the output NQ of the flip-flop circuit 101 becomes low level, the electric transmission circuit selection signal 102 is driven, and the first input By lowering the base potential of the transistor 103 and driving the first transistor by the transmission signal 94, a potential difference is generated in the collector resistor 104, and at the same time, a potential difference is also generated in the emitter resistor 110, and the emitter follower transistor 107 and The pull-down transistor 109 outputs data at high speed to the electric line connection output 108.
In this circuit, the capacitance 111 and the differential resistance 113
Since the differential voltage is applied to the base of the pull-down transistor and the voltage of the power supply terminal 112 is about -2 V, it becomes a low-power high-speed circuit, and an electric circuit suitable for the optical interconnect system according to the present invention. Can be said.

FIG. 10 shows an embodiment of the optical interconnect in the main frame according to the present invention. The system control 201 is connected to a plurality of instruction processors 202. System control 2
01 is connected to another system control 201, an input / output processor 203, an expansion memory 204, and a main memory 205. Generally, these consist of data and address signals and a large number of signal lines and are transferred at high speed.
In the present invention, these signals are transmitted by a plurality of optical fiber lines 20.
6, the optical transmission / reception device 207 is provided at the transmission end and the reception end, and each is embedded in a silicon device chip. In general, a large number of signals are concentrated on the system control 201, which causes a pin neck and physically limits the number of pins. However, in the present invention, since a high speed connection is achieved by light, only a small number of signal lines are needed, and no pin neck occurs. . The system control 201 is a central part for connecting the instruction processor 202 and other units at high speed, and a function of electrically exchanging data at high speed is required. By paying attention to this part and using a semiconductor in which the optical interconnect and the optical element device of the present invention are integrated, an extremely compact and high-performance system can be formed.

Next, an embodiment of the present invention will be described with reference to the computer block diagram of FIG. In this embodiment, the semiconductor integrated circuit embodying the present invention is used as a processor 500 for processing instructions and operations.
Is an example applied to a large-scale high-speed computer connected in parallel. In this embodiment, since the high-speed fusion type semiconductor integrated circuit embodying the present invention has a high degree of integration, the processor 500 for processing instructions and operations, the storage control device 501, the main storage device 502, etc., have one side. It could be composed of a fused semiconductor chip of 10 to 30 mm. A processor 500 for processing these commands and operations, a storage controller 501, and a data communication interface 50 composed of a compound semiconductor integrated circuit.
3 was mounted on the same ceramic substrate 506. Further, the data communication interface 503 and the data communication control device 504 are mounted on the same ceramic substrate 507. These ceramic substrates 506 and 507, and the main memory device 5
The size of the ceramic board on which 02 is mounted is about 50
The central processing unit 508 of a large-scale computer was formed by mounting on a substrate of about cm or less. The data communication in the central processing unit 508, the data communication between a plurality of central processing units, or the data communication interface 5
03 and the board 509 on which the input / output processor 505 is mounted were carried out via an optical fiber 510 indicated by double-ended arrow lines in the figure. In this calculator,
The processor 500 that processes instructions and operations, the silicon semiconductor integrated circuits such as the storage control device 501 and the main storage device 502 operate in parallel at high speed, and data communication is performed using light as a medium. The number of instruction processings per hit could be greatly increased.

FIG. 12 shows an embodiment of the present invention in a large-scale LSI. As such a typical LSI, a microprocessor chip having an optical interconnect,
These include workstation chips, mainframe instruction processor chips, and system control chips. In this example, the optical element device 401 is embedded in the silicon chip portion, and the optical fibers 402 are arranged side by side for transmitting and receiving light from the end face. The optical element device 401 is electrically connected to an opto-electric conversion circuit block 403 having a conversion circuit formed of an electric circuit element in silicon. The silicon chip 409 is composed of an instruction processing block 405, a floating point processing block 408, a high speed buffer memory 404, a control memory 407, a bonding pad 408 and the like. Block 403 and block 404
Are closely connected to each other, and data received by the optical element device 401 by light is converted into an electric signal in the memory 404 and stored in the block 403 at high speed. Similarly, the content of the memory 404 drives the laser diode in the optical element device 401 by the drive circuit in the block 403 to convert it into light and sends it to the optical fiber.

FIG. 13 shows an embodiment in which the fusion type semiconductor chip according to the present invention is mounted on a package. In this example, an example of mounting on a pin grid array package 605 having a radiation fin 604 is shown. The fused semiconductor chip 601 of the present invention is mounted on a package 605 and then connected by a bonding wire 602. An optical fiber penetrates the package and a fiber end is in contact with a device surface at a portion for transmitting and receiving light. .. Electrical signals can be routed from the pins 606 of the package through the printed circuit board.

[0025]

According to the present invention, a high-speed information processing function component in which highly integrated silicon devices and optical elements are integrated at high density, for example, in a one-chip mainframe processor or a full-wafer supercomputer,
When performing high-speed data transfer by performing optical interconnection with other chips or wafers, the light-emitting element on the transmission side becomes abnormal and transmission becomes impossible, making the system inoperable or drastically reducing performance. It is possible to self-recover to a normal state against a failure caused by doing. Therefore, there is an effect that it can greatly contribute to the improvement of reliability of the high-speed processing device.

Further, in this high-speed information processing function component, since the control circuit for self-recovery can be placed very close to the optical element, it is possible to switch from the abnormality detection of the light emitting element to the spare light emitting element. Can be extremely fast.

Further, since a single laser diode can be integrated into a silicon device by a technique such as embedding, it is possible to reduce restrictions required for the function of the laser diode and use a complicated process such as a monolithic OEIC. It is possible to achieve cost reduction without requiring an element with low yield.

Further, even if the laser diode is an element manufactured by a high performance advanced process having a relatively short life, the reliability can be improved by incorporating a plurality of laser diodes. Therefore, a high-performance optical interconnect system can be put into practical use at an early stage, which can greatly contribute to the development of the information processing industry.

When all the optical elements are down,
Since it has a means for transferring data by an electrical method, it is extremely effective in avoiding a system down.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration example of the present invention.

FIG. 2 is a diagram showing an operation example of the present invention.

FIG. 3 is a diagram showing an embodiment of the present invention.

FIG. 4 is a diagram showing an embodiment of a control circuit of the present invention.

FIG. 5 is a diagram showing an embodiment of the present invention.

FIG. 6 is a view showing a cross section of an embodiment for embedding the optical device of the present invention.

FIG. 7 is a diagram showing a plan view of one embodiment for embedding the optical element device of the present invention.

FIG. 8 is a diagram showing another configuration example of the present invention.

FIG. 9 is a diagram showing a control circuit embodiment in another configuration example of the present invention.

FIG. 10 is a diagram showing an embodiment of an optical interconnect in a mainframe of the present invention.

FIG. 11 is a diagram showing an example of the computer of the present invention.

FIG. 12 is a diagram showing an example of a large-scale integrated LSI of the present invention.

FIG. 13 is a diagram showing an implementation example of the present invention.

[Explanation of symbols]

1 ... Processor chip, 2 ... Control circuit, 3 ... Photodiode, 4 ... Regular laser diode, 4a ... Spare laser diode, 5 ... Optical waveguide, 6 ... Grating, 7 ...
Optical fiber, 8a ... Regular laser diode connection signal, 8
b ... Preliminary laser diode connection signal, 8c ... Photodiode connection signal, 31 ... Regular laser diode abnormality detection signal, 32 ... Flip-flop circuit, 33 ... Clock signal, 34 ... Transmission signal, 35 ... First AND gate, 35
a ... Second AND gate, 36 ... Preliminary laser diode drive signal, 37 ... Regular laser diode drive signal, 38
... spare laser diode selection signal, 39 ... regular laser diode selection signal, 40 ... control circuit, 41 ... regular laser diode, 42 ... optical fiber, 43 ... processor chip, 44 ... optical waveguide, 45 ... grating, 46 ... photodiode, 47 ... Connection wiring, 48 ... Spare laser diode, 50 ... Silicon substrate, 51 ... Control signal, 52
... Regular laser diode, 53 ... Optical waveguide, 54 ... Photodiode, 55 ... Optical fiber, 56 ... Control circuit, 5
7 ... Preliminary laser diode, 61 ... Optical device device, 6
2 ... Plastic resin, 63 ... Silicon substrate, 64 ... Connection conductor, 65 ... Silicon device and wiring, 66 ... Oxide film, 67 ... Silicon removal section, 68 ... Laser light, 69 ... Optical waveguide, 81 ... Control circuit, 82 ... Processor chip, 8
3 ... Regular laser diode, 84 ... Grating, 8
5 ... Optical fiber, 86 ... Optical waveguide, 87 ... Spare laser diode, 88 ... Photo diode, 89 ... Electrical transmission line, 91 ... Regular laser diode abnormality detection signal, 92 ...
First flip flip, 93 ... Spare laser diode selection signal, 94 ... Transmission signal, 95 ... First AND gate, 96 ... Spare laser diode drive signal, 97 ... Second
AND gate, 98 ... Spare laser diode drive signal, 99 ... Spare laser diode selection signal, 100 ... Spare laser diode abnormality detection signal, 101 ... Second flip-flop, 102 ... Electrical transmission circuit selection signal, 103
… First input transistor, 104… Collector resistance, 1
05 ... Second input transistor, 106 ... Clamp transistor, 107 ... Emitter follower transistor, 1
08 ... Electric line connection output, 109 ... Pull-down transistor, 110 ... Emitter resistance, 111 ... Capacitance, 112 ... Power supply terminal, 113 ... Differential resistance, 201 ... System control chip, 202 ... Instruction chip, 203 ... Input / output processor chip, 204 …
Extended memory, 205 ... Main memory, 206 ... Optical fiber,
207 ... Optical transmitting / receiving device, 401 ... Optical device device,
402 ... Optical fiber, 403 ... Conversion circuit, 404 ... Buffer memory, 405 ... Instruction processing block, 406 ... Floating point block, 408 ... Control memory, 408
... Bonding pad, 409 ... Silicon chip, 50
0 ... Processor for processing instructions and operations made of fused semiconductor integrated circuit, 501 ... System controller made of fused semiconductor integrated circuit, 502 ... Main memory made of silicon semiconductor integrated circuit, 503 ... Data communication made of compound semiconductor integrated circuit Interface, 504 ... Data communication control device, 505 ... I / O processor, 506 ... Ceramic substrate, 507 ... Ceramic substrate, 508 ... Central processing unit, 509 ... I / O processor mounting substrate, 510 ... Data communication optical fiber, 601 ... Device Fusion chip, 6
02 ... Bonding wire, 603 ... Optical fiber, 60
4 ... Radiating fins, 605 ... Package body, 606 ... Package pins.

Claims (5)

[Claims] 1. A semiconductor integrated circuit in which functional elements formed by silicon semiconductor technology are integrated, comprising a plurality of light emitting elements and at least one light receiving element for monitoring light emission of the light emitting elements, When it is detected that one of the light emitting elements does not operate normally, a semiconductor device having a function of switching to another light emitting element different from the light emitting element on the semiconductor integrated circuit and continuing the normal operation, A semiconductor device, wherein an element is formed by being embedded in the semiconductor integrated circuit. 2. The semiconductor device according to claim 1, wherein the light receiving element is formed by being embedded in the semiconductor integrated circuit. 3. When it is detected that at least one of the light emitting elements does not operate normally, a function of switching to another light emitting element different from the light emitting element on the semiconductor integrated circuit to continue normal operation is formed. 2. The semiconductor device according to claim 1, wherein a control circuit for performing the operation is integrated on the semiconductor integrated circuit. 4. The light emitting device or the light receiving device is formed by being embedded in the semiconductor integrated circuit, and the light emitting device or the light receiving device is formed by a technique using a focused ion beam and an optical CVD technique. The semiconductor device according to claim 1, wherein the semiconductor device is connected to the semiconductor integrated circuit by wiring. 5. When it is detected that both the light emitting element and the other light emitting element do not operate normally, the light emitting element has a function of switching to an electric circuit that equivalently transmits the same information and continuing normal operation. The semiconductor device according to claim 1, wherein: