JPH05221742A - Porous silicon carbide ceramic and its production - Google Patents
Porous silicon carbide ceramic and its productionInfo
- Publication number
- JPH05221742A JPH05221742A JP4024010A JP2401092A JPH05221742A JP H05221742 A JPH05221742 A JP H05221742A JP 4024010 A JP4024010 A JP 4024010A JP 2401092 A JP2401092 A JP 2401092A JP H05221742 A JPH05221742 A JP H05221742A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- porous silicon
- sintering
- porous
- porosity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/90—Electrical properties
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は多孔質炭化ケイ素セラ
ミックスおよびその製造方法に関し、特に、フィルタ、
分散板等に用いられる多孔質炭化ケイ素セラミックスお
よびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a porous silicon carbide ceramics and a method for producing the same, and more particularly to a filter,
The present invention relates to a porous silicon carbide ceramic used for a dispersion plate and the like and a method for producing the same.
【０００２】[0002]
【従来技術および解決しようとする課題】従来から腐食
性あるいは高温度の気体、液体等を濾過するためのフィ
ルタまたは分散板としては、多孔質Ａｌ2 Ｏ3 が用いら
れてきた。2. Description of the Related Art Conventionally, porous Al2 O3 has been used as a filter or a dispersion plate for filtering corrosive or high temperature gas, liquid and the like.
【０００３】しかしながら、この多孔質Ａｌ2 Ｏ3 は材
質的に耐食性、耐摩耗性が余り良くなく、硝フッ酸、水
酸化ナトリウム溶液等と容易に反応して腐食され、ま
た、流体中に微細な固体が分散していると、摩滅し易い
という問題点を有していた。However, this porous Al2 O3 is not so good in terms of corrosion resistance and wear resistance as a material, and easily reacts with nitric hydrofluoric acid, sodium hydroxide solution and the like to be corroded, and it is a fine solid in the fluid. When dispersed, it had a problem that it was easily worn away.
【０００４】この発明は上記のような従来のもののもつ
問題点を解決したものであって、耐食性、耐摩耗性に優
れたフィルタ、分散板等に用いられる多孔質炭化ケイ素
セラミックスおよびその製造方法を提供することを目的
とするものである。The present invention solves the above-mentioned problems of the conventional ones, and provides a porous silicon carbide ceramic used for a filter, a dispersion plate, etc. having excellent corrosion resistance and wear resistance, and a method for producing the same. It is intended to be provided.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めにこの発明の多孔質炭化ケイ素セラミックスは、平均
気孔径０．１〜３μｍ、気孔率１５〜５０％を有してお
り、また、この発明の多孔質炭化ケイ素セラミックス
は、平均気孔径０．１〜３μｍ、気孔率１５〜５０％、
比抵抗０．０１〜１０Ωｃｍを有しているという手段を
採用したものである。In order to achieve the above object, the porous silicon carbide ceramics of the present invention have an average pore diameter of 0.1 to 3 μm and a porosity of 15 to 50%. The porous silicon carbide ceramics of the present invention have an average pore diameter of 0.1 to 3 μm, a porosity of 15 to 50%,
It adopts a means of having a specific resistance of 0.01 to 10 Ωcm.
【０００６】また、この発明の多孔質炭化ケイ素セラミ
ックスの製造方法は、平均粒径０．３〜１０μｍの炭化
ケイ素（ＳｉＣ）粉末に焼結助材を数％混合してプレス
成形した後、アルゴン（Ａｒ）雰囲気にて１８００〜２
０００℃で焼結するもので、また、この発明の多孔質炭
化ケイ素セラミックスの製造方法は、平均粒径０．３〜
１０μｍの炭化ケイ素（ＳｉＣ）粉末に焼結助材を数％
および導電材を５〜２５％混合してプレス成形した後
に、アルゴン（Ａｒ）雰囲気にて１８００〜２０００℃
で焼結するという手段を採用したものである。Further, according to the method for producing a porous silicon carbide ceramics of the present invention, a few percent of a sintering aid is mixed with silicon carbide (SiC) powder having an average particle size of 0.3 to 10 μm, and the mixture is press-molded, and then argon is used. 1800-2 in (Ar) atmosphere
The method for producing the porous silicon carbide ceramics according to the present invention is to sinter at 000 ° C.
A few percent of sintering aid is added to 10 μm silicon carbide (SiC) powder.
And 5 to 25% of the conductive material are mixed and press-molded, and then 1800 to 2000 ° C. in an argon (Ar) atmosphere.
The method of sintering is adopted.
【０００７】[0007]
【作用】この発明は上記の手段を採用したことにより、
平均粒径０．３〜１０μｍの炭化ケイ素（ＳｉＣ）粉末
に焼結助材を数％混合してプレス成形した後に、アルゴ
ン（Ａｒ）雰囲気にて１８００〜２０００℃で焼結して
製造される多孔質炭化ケイ素セラミックスは、平均気孔
径が０．１〜３μｍ、気孔率が１５〜５０％を有してい
る。なお、前記焼結助材としては、炭素（Ｃ）、炭化ホ
ウ素（Ｂ4 Ｃ）等が用いられる。The present invention, by adopting the above means,
It is manufactured by mixing silicon carbide (SiC) powder having an average particle diameter of 0.3 to 10 μm with a sintering aid in a proportion of several percent, press-molding the product, and then sintering the mixture at 1800 to 2000 ° C. in an argon (Ar) atmosphere. The porous silicon carbide ceramics have an average pore diameter of 0.1 to 3 μm and a porosity of 15 to 50%. As the sintering aid, carbon (C), boron carbide (B4 C) or the like is used.
【０００８】また、平均粒径０．３〜１０μｍの炭化ケ
イ素（ＳｉＣ）粉末に焼結助材を数％および導電材を５
〜２５％混合してプレス成形した後に、アルゴン（Ａ
ｒ）雰囲気にて１８００〜２０００℃で焼結して製造さ
れる多孔質炭化ケイ素セラミックスは、平均気孔径が
０．１〜３μｍ、気孔率が１５〜５０％、比抵抗０．０
１〜１０Ωｃｍを有している。なお、前記焼結助材とし
ては、炭素（Ｃ）、炭化ホウ素（Ｂ4 Ｃ）等が用いら
れ、導電材としては、ホウ化ジルコニウム（ＺｒＢ2
）、ホウ化チタン（ＴｉＢ2 ）、炭化チタン（Ｔｉ
Ｃ）、炭化ニオブ（ＮｂＣ）等が用いられる。In addition, a silicon carbide (SiC) powder having an average particle size of 0.3 to 10 μm, a sintering aid of several% and a conductive material of 5%.
-25% mixed and press-molded, then argon (A
r) The porous silicon carbide ceramics produced by sintering at 1800 to 2000 ° C. in an atmosphere has an average pore diameter of 0.1 to 3 μm, a porosity of 15 to 50%, and a specific resistance of 0.0.
It has 1 to 10 Ωcm. Carbon (C), boron carbide (B4 C) and the like are used as the sintering aid, and zirconium boride (ZrB2) is used as the conductive material.
), Titanium boride (TiB2), titanium carbide (Ti
C), niobium carbide (NbC) or the like is used.
【０００９】[0009]
【実施例】以下、実施例によりこの発明を更に詳細に説
明する。 〔実施例−１〕まず、平均粒径０．８μｍの炭化ケイ素
（ＳｉＣ）粉末に焼結助材として炭素（Ｃ）を２％、炭
化ホウ素（Ｂ4 Ｃ）を０．４％混合して成形圧力０．４
ｔｏｎ／ｃｍ2 でプレス成形する。The present invention will be described in more detail with reference to the following examples. Example 1 First, 2% of carbon (C) and 0.4% of boron carbide (B4 C) as a sintering aid were mixed with silicon carbide (SiC) powder having an average particle diameter of 0.8 μm and molded. Pressure 0.4
Press-mold at ton / cm2.
【００１０】そして、プレス成形した後に、アルゴン
（Ａｒ）雰囲気にて１８００℃で焼結すると多孔質炭化
ケイ素セラミックスが製造される。After press molding, the porous silicon carbide ceramics are manufactured by sintering at 1800 ° C. in an argon (Ar) atmosphere.
【００１１】また、この多孔質炭化ケイ素セラミックス
は平均気孔径が０．３μｍで、気孔率が４３％を有する
ものであった。The porous silicon carbide ceramics had an average pore diameter of 0.3 μm and a porosity of 43%.
【００１２】そして、この多孔質炭化ケイ素セラミック
スを厚さ２０ｍｍ、直径１００ｍｍに形成して水酸化ナ
トリウム溶液中に設置したところ、圧力損失２．５ｋｇ
／ｃｍ2 で、通過流量３．６ｌ／ｍｉｎで、１０か月以
上使用可能であった。なお、多孔質Ａｌ2 Ｏ3 は同一条
件下で実験を行うと、１週間で使用ができなくなったこ
とを考慮すると、従来の多孔質Ａｌ2 Ｏ3 に比較して飛
躍的に耐食性、耐摩耗性等が向上したことになる。When this porous silicon carbide ceramic was formed to a thickness of 20 mm and a diameter of 100 mm and placed in a sodium hydroxide solution, the pressure loss was 2.5 kg.
The flow rate was 3.6 l / min, and it could be used for 10 months or longer. Considering that porous Al2 O3 could not be used within one week when tested under the same conditions, the corrosion resistance and wear resistance were dramatically improved compared to conventional porous Al2 O3. It has been done.
【００１３】〔実施例−２〕まず、平均粒径０．８μｍ
の炭化ケイ素（ＳｉＣ）粉末に焼結助材として炭素
（Ｃ）２％、炭化ホウ素（Ｂ4 Ｃ）０．４％と、導電材
として炭化チタン（ＴｉＣ）１５％とを混合して成形圧
力０．４ｔｏｎ／ｃｍ2 でプレス成形する。Example 2 First, the average particle size is 0.8 μm.
2% of carbon (C) and 0.4% of boron carbide (B4 C) as a sintering aid and 15% of titanium carbide (TiC) as a conductive material are mixed with the above silicon carbide (SiC) powder, and the molding pressure is 0. Press-mold at 4 ton / cm 2.
【００１４】そして、プレス成形した後に、アルゴン
（Ａｒ）雰囲気にて１８００℃で焼結して多孔質炭化ケ
イ素セラミックスを製造する。After press molding, the porous silicon carbide ceramics is manufactured by sintering at 1800 ° C. in an argon (Ar) atmosphere.
【００１５】また、この多孔質炭化ケイ素セラミックス
は平均気孔径が０．４μｍで、気孔率が４１％、比抵抗
３Ωｃｍを有するものであった。The porous silicon carbide ceramics had an average pore diameter of 0.4 μm, a porosity of 41% and a specific resistance of 3 Ωcm.
【００１６】そして、この多孔質炭化ケイ素セラミック
スを厚さ２０ｍｍ、直径１００ｍｍに形成し、電圧１０
０Ｖを掛けて水酸化ナトリウム溶液中に設置したとこ
ろ、圧力損失が２．５ｋｇ／ｃｍ2 で、通過流量が３．
９ｌ／ｍｉｎで、流体温度が６０℃から８８℃まで上昇
し、１０か月以上使用可能であった。Then, this porous silicon carbide ceramic was formed into a thickness of 20 mm and a diameter of 100 mm, and a voltage of 10
When it was placed in a sodium hydroxide solution by applying 0 V, the pressure loss was 2.5 kg / cm @ 2 and the passing flow rate was 3.
At 9 l / min, the fluid temperature rose from 60 ° C to 88 ° C and could be used for 10 months or longer.
【００１７】なお、多孔質Ａｌ2 Ｏ3 は同一条件下で実
験を行うと、１週間で使用ができなくなったことを考慮
すると、従来の多孔質Ａｌ2 Ｏ3 に比較して飛躍的に耐
食性、耐摩耗性等が向上したことになる。また、多孔質
Ａｌ2 Ｏ3 は絶縁体であるため通電して流体を加熱する
ことはできないが、この多孔質炭化ケイ素セラミックス
は導電材が含有されているため通電が可能で、流体を加
熱することができる。Considering that the porous Al2 O3 could not be used within one week when the experiment was performed under the same conditions, the corrosion resistance and wear resistance were dramatically improved as compared with the conventional porous Al2 O3. Etc. have improved. Further, since porous Al2 O3 is an insulator, it is impossible to heat the fluid by energizing it, but since this porous silicon carbide ceramic contains a conductive material, it can be energized and heat the fluid. it can.
【００１８】[0018]
【発明の効果】この発明は前記のように構成したことに
より、フィルタ、分散板等に使用すると従来の多孔質Ａ
ｌ2 Ｏ3 と比較して飛躍的に耐食性、耐摩耗性等が向上
し、長時間使用することができ、導電材が含有されると
通電が可能となって流体の温度を上昇させることができ
るという優れた効果を有するものである。EFFECTS OF THE INVENTION Since the present invention is constructed as described above, it has a conventional porous structure A when used in a filter, a dispersion plate or the like.
Compared with l2 O3, it has dramatically improved corrosion resistance, wear resistance, etc., can be used for a long time, and when a conductive material is contained, it can be energized to raise the temperature of the fluid. It has an excellent effect.
Claims (4)
〜５０％を有することを特徴とする多孔質炭化ケイ素セ
ラミックス。1. An average pore diameter of 0.1 to 3 μm and a porosity of 15.
Porous silicon carbide ceramics characterized by having ˜50%.
〜５０％、比抵抗０．０１〜１０Ωｃｍを有することを
特徴とする多孔質炭化ケイ素セラミックス。2. An average pore diameter of 0.1 to 3 μm and a porosity of 15.
Porous silicon carbide ceramics characterized by having ˜50% and a specific resistance of 0.01 to 10 Ωcm.
（ＳｉＣ）粉末に焼結助材を数％混合してプレス成形し
た後、アルゴン（Ａｒ）雰囲気にて１８００〜２０００
℃で焼結することを特徴とする多孔質炭化ケイ素セラミ
ックスの製造方法。3. A silicon carbide (SiC) powder having an average particle diameter of 0.3 to 10 μm mixed with a sintering additive of several% and press-molded, and then 1800 to 2000 in an argon (Ar) atmosphere.
A method for producing a porous silicon carbide ceramics, which comprises sintering at ℃.
（ＳｉＣ）粉末に焼結助材を数％および導電材を５〜２
５％混合してプレス成形した後に、アルゴン（Ａｒ）雰
囲気にて１８００〜２０００℃で焼結することを特徴と
する多孔質炭化ケイ素セラミックスの製造方法。4. A silicon carbide (SiC) powder having an average particle diameter of 0.3 to 10 μm containing a few% of a sintering aid and 5 to 2 of a conductive material.
A method for producing a porous silicon carbide ceramic, which comprises mixing 5%, press-molding, and then sintering at 1800 to 2000 ° C. in an argon (Ar) atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4024010A JPH05221742A (en) | 1992-02-10 | 1992-02-10 | Porous silicon carbide ceramic and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4024010A JPH05221742A (en) | 1992-02-10 | 1992-02-10 | Porous silicon carbide ceramic and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05221742A true JPH05221742A (en) | 1993-08-31 |
Family
ID=12126586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4024010A Pending JPH05221742A (en) | 1992-02-10 | 1992-02-10 | Porous silicon carbide ceramic and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05221742A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994029238A1 (en) * | 1993-06-14 | 1994-12-22 | Sumitomo Electric Industries, Ltd. | Porous ceramic and process for producing the same |
-
1992
- 1992-02-10 JP JP4024010A patent/JPH05221742A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994029238A1 (en) * | 1993-06-14 | 1994-12-22 | Sumitomo Electric Industries, Ltd. | Porous ceramic and process for producing the same |
| US5750449A (en) * | 1993-06-14 | 1998-05-12 | Sumitomo Electric Industries, Ltd. | Ceramic porous bodies and method of producing the same |
| US5759460A (en) * | 1993-06-14 | 1998-06-02 | Sumitomo Electric Industries, Ltd. | Ceramic porous bodies and method of producing the same |
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