JPH0522061A - Output power detection circuit - Google Patents

Output power detection circuit

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Publication number
JPH0522061A
JPH0522061A JP19729891A JP19729891A JPH0522061A JP H0522061 A JPH0522061 A JP H0522061A JP 19729891 A JP19729891 A JP 19729891A JP 19729891 A JP19729891 A JP 19729891A JP H0522061 A JPH0522061 A JP H0522061A
Authority
JP
Japan
Prior art keywords
output
output power
voltage
circuit
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP19729891A
Other languages
Japanese (ja)
Inventor
Osamu Osawa
修 大沢
Toshiaki Kobayashi
俊明 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP19729891A priority Critical patent/JPH0522061A/en
Publication of JPH0522061A publication Critical patent/JPH0522061A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To output a detected voltage in proportion to output power within fixed error by impressing bias from a constant voltage circuit, which is equipped with a Zener diode having a positive temperature characteristic, to a half wave rectifier circuit. CONSTITUTION:An output power detection circuit 10 is equipped with a GaAs monolithic chip connected while providing a diode D1, resistor Ra and resistor Rb, and a half wave rectifier is composed of the diode D1 and capacitor C1. A voltage Va at the anode of a Zener diode ZD impresses a bias voltage Vb through resistors R1, R2, Ra and Rb to the diode D1, and a power amplifier 12 outputs high frequency power. This high frequency power is passed through a capacitor C2 and directional couplers L1 and L2 and turned to an output voltage Pout on one hand. On the other hand, it is impressed to the diode D1, receives half wave rectification and is extracted from an output terminal 16 as a DC output power signal Vdet in proportion to the output power of a power amplifier 14.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は出力電力検出回路、より
具体的には、自動車電話や携帯用電話機などの移動体電
話機において送信電力を設定値に維持する出力自動制御
回路に設けられる出力電力検出回路に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an output power detection circuit, and more specifically to an output power control circuit provided in an automatic output control circuit for maintaining a transmission power at a set value in a mobile telephone such as an automobile telephone or a portable telephone. The present invention relates to a detection circuit.

【0002】[0002]

【従来の技術】この種の技術に米国特許第4,523,155 号
に記載のダイナミック・レンジの広い高周波信号電力増
幅器用の温度補償付き出力自動制御回路(AOC)がある。
この出力自動制御回路は、電力増幅器の出力電力を9ミ
リワットから5ワットまで、すなわち27dbのダイナミッ
クレンジにわたって7段階に設定される出力レベルを誤
差1.5db 以内に維持する回路である。電力増幅器の出力
は、前段の電流増幅器から供給される駆動電流に比例す
る。電力増幅器の出力が入力される半波整流器は、電力
増幅器の出力に比例した大きさの出力電力信号を出力す
る。この半波整流器は、抵抗を介して接続されるダイオ
−ド、および他の抵抗を通して供給される電源により、
出力電力信号のリニアリティを保つための温度補償とバ
イアス電圧が与えられる。半波整流器の出力する出力電
力信号は、増幅率がレベルコントロール信号で選択され
る増幅器で増幅されて比較器に入力される。比較器は、
増幅された出力電力信号と電力増幅器の所定出力に対応
する基準電圧との差分を電流増幅器に出力し、この電流
増幅器が電力増幅器に出力する駆動電流を変化させ、こ
れによって電力増幅器の出力を所定の出力レベルに固定
する出力自動制御が行われる。
2. Description of the Related Art A technique of this kind is an automatic output control circuit (AOC) with temperature compensation for a high dynamic range high frequency signal power amplifier described in US Pat. No. 4,523,155.
This automatic output control circuit is a circuit for maintaining the output level of the output power of the power amplifier from 9 milliwatts to 5 watts, that is, in seven steps over the dynamic range of 27db, within an error of 1.5db. The output of the power amplifier is proportional to the drive current supplied from the previous stage current amplifier. The half-wave rectifier to which the output of the power amplifier is input outputs an output power signal having a magnitude proportional to the output of the power amplifier. This half-wave rectifier has a diode connected through a resistor and a power source supplied through another resistor,
Temperature compensation and bias voltage are provided to maintain the linearity of the output power signal. The output power signal output from the half-wave rectifier is amplified by the amplifier whose amplification factor is selected by the level control signal and input to the comparator. The comparator is
The difference between the amplified output power signal and the reference voltage corresponding to the predetermined output of the power amplifier is output to the current amplifier, and the drive current output to the power amplifier by the current amplifier is changed, whereby the output of the power amplifier is changed to the predetermined value. The automatic output control is performed to fix the output level of.

【0003】[0003]

【発明が解決しようとする課題】このように従来例の出
力自動制御回路は、半波整流器にダイオードと抵抗より
なる温度補償回路を接続して、出力電力に比例した出力
電力信号を検出し、この出力電力信号と基準信号の差分
により電力増幅器の出力を設定値に自動制御していた。
As described above, the conventional automatic output control circuit detects the output power signal proportional to the output power by connecting the temperature compensation circuit including the diode and the resistor to the half-wave rectifier. The output of the power amplifier is automatically controlled to a set value based on the difference between the output power signal and the reference signal.

【0004】本発明は、通常のダイオード構成によらず
して出力電力と出力電力信号の良好な比例関係を保つ出
力電力検出回路を提供することを目的とする。
It is an object of the present invention to provide an output power detection circuit which maintains a good proportional relationship between output power and an output power signal regardless of a normal diode configuration.

【0005】[0005]

【課題を解決するための手段】本発明による出力電力検
出回路は、自動出力制御回路の半波整流器回路に定電圧
ダイオードと抵抗で構成する定電圧回路が接続されてい
る。
In the output power detection circuit according to the present invention, a constant voltage circuit composed of a constant voltage diode and a resistor is connected to a half-wave rectifier circuit of an automatic output control circuit.

【0006】より詳細には、本発明による出力電力検出
回路は、電力増幅器の高周波出力が入力される半波整流
器回路を有し、半波整流器回路は、高周波出力の出力電
力のダイナミックレンジに比例した検波電圧を出力し、
さらに出力電力検出回路は、基準電位および電源の間に
抵抗を介して接続されるツェナーダイオードを含む定電
圧回路を有し、定電圧回路の出力は、半波整流器回路に
接続されて半波整流器回路にバイアス電圧を印加し、こ
れによって半波整流器回路は、所定の温度条件において
検波出力を前記出力電力に対する比例関係を維持して出
力する。
More specifically, the output power detection circuit according to the present invention has a half-wave rectifier circuit to which the high frequency output of the power amplifier is input, and the half wave rectifier circuit is proportional to the dynamic range of the output power of the high frequency output. Output the detected voltage,
Further, the output power detection circuit has a constant voltage circuit including a Zener diode connected between the reference potential and the power supply via a resistor, and the output of the constant voltage circuit is connected to the half wave rectifier circuit to form a half wave rectifier. A bias voltage is applied to the circuit, which causes the half-wave rectifier circuit to output a detection output under a predetermined temperature condition while maintaining a proportional relationship with the output power.

【0007】[0007]

【作用】本発明によれば、電力増幅器の高周波出力を半
波整流器回路に入力し、出力電力検出回路は出力電力の
ダイナミックレンジに比例した検波電圧を出力する。定
電圧回路は半波整流器に適正なバイアス電圧を与え、こ
れによって所定の温度条件、たとえば-30 °C 〜 +85°
C の範囲で検波電圧の表示する出力電力の誤差を±1db
に設定できる。
According to the present invention, the high frequency output of the power amplifier is input to the half-wave rectifier circuit, and the output power detection circuit outputs a detection voltage proportional to the dynamic range of the output power. The constant voltage circuit provides a proper bias voltage to the half-wave rectifier, which allows it to operate under certain temperature conditions, such as -30 ° C to +85 ° C.
The error of the output power displayed by the detection voltage in the range of C is ± 1db
Can be set to.

【0008】[0008]

【実施例】次に添付図面を参照して本発明による出力電
力検出回路の実施例を詳細に説明する。本実施例の出力
電力検出回路は、自動車電話や携帯用電話機などの移動
体電話機に有利に適用される。このような移動体電話機
には、送信電力を設定値に固定するための出力自動制御
回路(AOC)が設けられている。送信電力を出力する電力
増幅器は、たとえば30db程度の広いダイナミックレンジ
を有し、増幅器の出力は、出力自動制御回路によりこの
レンジ内の複数の設定値の1つに固定される。出力自動
制御回路は、出力電力に比例する出力電力信号を出力す
る出力電力検出回路を有し、後者は、出力電力信号と基
準電圧との差分を検出して電力増幅器の出力を常に設定
値に実質的に固定する出力自動制御を行う。出力電力の
精度は非常に高く、例えば、温度条件(-30 °C〜 +85
°C )で設定出力の誤差は±1db 以内に規定される。
Embodiments of the output power detection circuit according to the present invention will now be described in detail with reference to the accompanying drawings. The output power detection circuit of this embodiment is advantageously applied to mobile phones such as car phones and mobile phones. Such a mobile phone is provided with an automatic output control circuit (AOC) for fixing the transmission power to a set value. A power amplifier that outputs transmission power has a wide dynamic range of, for example, about 30 db, and the output of the amplifier is fixed to one of a plurality of set values within this range by an output automatic control circuit. The automatic output control circuit has an output power detection circuit that outputs an output power signal that is proportional to the output power.The latter detects the difference between the output power signal and the reference voltage and always sets the output of the power amplifier to the set value. The output is automatically controlled to be substantially fixed. The output power accuracy is very high, for example in temperature conditions (-30 ° C to +85
The error of the setting output in ° C) is specified within ± 1db.

【0009】図1は、本発明による出力電力検出回路の
実施例を示す回路図である。出力電力検出回路10は、本
実施例では、ダイオードD1, ならびに抵抗RaおよびRbを
含んでこれらが図示のように接続されたGaAsモノシリッ
ク・チップ12を有し、ダイオードD1とコンデサC1は半波
整流器を構成する。出力電力検出回路10はまた、ツェナ
ーダイオードZD,および抵抗R0〜R2を有し、ツェナーダ
イオードZDは、電源電圧Vdd から抵抗R0を通して電源VA
が印加される陽極18を有し、その陰極19は、図示のよう
に基準電位、たとえば地気に接続されている。ツェナー
ダイオードZDの陽極の電圧VAは、抵抗R1、R2、Rbおよび
Raを通して半波整流器のダイオードD1にバイアス電圧Vb
を与える。電力増幅器12は高周波電力を出力する。この
高周波電力は、一方ではコンデンサC2および方向性結合
器L1, L2を通して出力電圧Poutとなり、他方ではダイオ
ードD1に印加されて半波整流され、電力増幅器14の出力
電力に比例した直流の出力電力信号Vdetとして出力端子
16から取り出される。
FIG. 1 is a circuit diagram showing an embodiment of an output power detection circuit according to the present invention. The output power detection circuit 10 in this embodiment has a diode D1, and a GaAs monolithic chip 12 including resistors Ra and Rb connected as shown, with diode D1 and capacitor C1 being a half-wave rectifier. Make up. The output power detection circuit 10 also has a Zener diode ZD and resistors R0 to R2.
Has an anode 18 to which is applied, the cathode 19 of which is connected to a reference potential, eg earth, as shown. The voltage VA at the anode of the Zener diode ZD depends on the resistors R1, R2, Rb and
Bias voltage Vb is applied to diode D1 of the half-wave rectifier through Ra.
give. The power amplifier 12 outputs high frequency power. This high frequency power becomes the output voltage Pout through the capacitor C2 and the directional couplers L1 and L2 on the one hand, and is applied to the diode D1 and half-wave rectified on the other hand, and the DC output power signal proportional to the output power of the power amplifier 14. Output terminal as Vdet
Taken out from 16.

【0010】図3は、ツェナーダイオードZDのツェナー
電圧VAおよびVBの温度特性をそれぞれ(A) および(B) に
示す。図4は、図3のツェナー電圧VAおよびVBの温度係
数を示す。ツェナー電圧VBは1V以上で正の温度係数を持
つ。
FIG. 3 shows the temperature characteristics of the Zener voltages VA and VB of the Zener diode ZD in (A) and (B), respectively. FIG. 4 shows the temperature coefficients of the Zener voltages VA and VB of FIG. Zener voltage VB is 1V or more and has a positive temperature coefficient.

【0011】図5は、図1の出力電力検出回路10におい
て、室温25°C でバイアス電圧Vbをパラメータとしたと
きの電力増幅器12の高周波電力Pout対検波電圧(出力電
力信号)Vdetの特性を示す。この図より、バイアス電圧
0.6V以上で検波電圧と電力は比例することが解り、最適
バイアス電圧Vbを0.6V以上に設定することができる。
FIG. 5 shows the characteristics of the high frequency power Pout of the power amplifier 12 versus the detection voltage (output power signal) Vdet when the bias voltage Vb is used as a parameter at room temperature of 25 ° C. in the output power detection circuit 10 of FIG. Show. From this figure, the bias voltage
It can be seen that the detected voltage and power are proportional to each other at 0.6 V or higher, and the optimum bias voltage Vb can be set to 0.6 V or higher.

【0012】図2は、図1の出力電力検出回路10の検波
電圧の温度特性で、最適バイアス電圧における検波電圧
と出力電力の比例関係は、温度条件( -30°C 〜 +85°
C )における出力電力が規格値±1db 以内にあり、出力
自動制御回路における条件に適合する。
FIG. 2 shows the temperature characteristic of the detection voltage of the output power detection circuit 10 of FIG. 1, and the proportional relationship between the detection voltage and the output power at the optimum bias voltage is the temperature condition (-30 ° C to + 85 ° C).
The output power in C) is within the specified value ± 1db, which complies with the conditions in the output automatic control circuit.

【0013】図6は従来例として前述した米国特許に含
まれる検波回路を示し、出力電力検波回路20は、ダイオ
ードD2、D3および抵抗Rc、Rdを含むGaAsモノシリック・
チップ22で構成されている。ダイオードD2には、電圧Vd
d から抵抗Rc、RbおよびダイオードD3によりバイアス電
圧Vb (0.6V) が印加される。ダイオードD2およびコンデ
ンサC3よりなる検波回路は、電力増幅器14より入力され
る高周波電力を検波して出力電力信号Vdetを出力する。
FIG. 6 shows a detection circuit included in the above-mentioned US patent as a conventional example. The output power detection circuit 20 is a GaAs monolithic circuit including diodes D2 and D3 and resistors Rc and Rd.
It is composed of a chip 22. The voltage Vd is applied to the diode D2.
Bias voltage Vb (0.6V) is applied from d through resistors Rc, Rb and diode D3. The detection circuit including the diode D2 and the capacitor C3 detects the high frequency power input from the power amplifier 14 and outputs the output power signal Vdet.

【0014】その検波電圧温度特性は図7のように、電
圧偏差0.10/高周波出力偏差0.5dbと優れている。この
要因は、検波用ダイオードD2が図8ような正の温度係数
を持ち、バイアス用ダイオードD3が図9に示すような値
0.10%/°C の負の温度係数を持ち、これらの正および負
の温度係数の相補効果により、図7のような直線検波特
性を得ているのであろう。
The temperature characteristic of the detected voltage is excellent as shown in FIG. 7 with a voltage deviation of 0.10 / high frequency output deviation of 0.5db. The cause is that the detection diode D2 has a positive temperature coefficient as shown in FIG. 8 and the bias diode D3 has a value as shown in FIG.
It has a negative temperature coefficient of 0.10% / ° C, and the linear detection characteristics as shown in Fig. 7 may be obtained by the complementary effect of these positive and negative temperature coefficients.

【0015】従来例の米国特許第4,523,155 号では、周
知の半波整流回路により高周波入力を検波出力し、半波
整流回路のバイアス回路に温度係数が負のダイオードを
用いて、温度条件下における直線検波特性を確保してい
る。しかし本実施例では、ツェナダイオードにより適正
なバイアス電圧を与えることによって検波のリニアリテ
ィを得ている。したがって本実施例は、この従来例に対
してとくにバイアス回路の構成が異なる。
In the prior art US Pat. No. 4,523,155, a high-frequency input is detected and output by a well-known half-wave rectifier circuit, and a diode having a negative temperature coefficient is used in the bias circuit of the half-wave rectifier circuit to obtain a straight line under temperature conditions. The detection characteristics are secured. However, in this embodiment, the linearity of the detection is obtained by applying an appropriate bias voltage with the Zener diode. Therefore, the structure of the bias circuit of this embodiment is different from that of the conventional example.

【0016】[0016]

【発明の効果】このように本発明によれば、温度条件-3
0 °C 〜 +85°C で、検波電圧の表示する出力電力の誤
差が実質的に±1db の範囲にある出力電力検出回路を構
成できる。したがつて、検波電圧と基準電圧を比較して
電力増幅器の出力電力を所定の値に固定する出力自動制
御回路に本発明を適用すれば、精度の高い出力自動制御
回路を構成できる。
As described above, according to the present invention, the temperature condition of -3
It is possible to configure an output power detection circuit in which the error of the output power displayed by the detection voltage is substantially within ± 1db at 0 ° C to +85 ° C. Therefore, if the present invention is applied to the automatic output control circuit that compares the detected voltage and the reference voltage and fixes the output power of the power amplifier at a predetermined value, a highly accurate automatic output control circuit can be configured.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による出力電力検出回路の実施例を示す
回路図である。
FIG. 1 is a circuit diagram showing an embodiment of an output power detection circuit according to the present invention.

【図2】図1に示す実施例における検波電圧の温度特性
図である。
FIG. 2 is a temperature characteristic diagram of a detection voltage in the embodiment shown in FIG.

【図3】ツェナーダイオードのツェナー電圧の温度特性
図である。
FIG. 3 is a temperature characteristic diagram of a Zener voltage of a Zener diode.

【図4】図3に示すツェナー電圧の温度係数の特性図で
ある。
FIG. 4 is a characteristic diagram of the temperature coefficient of the Zener voltage shown in FIG.

【図5】バイアス電圧をパラメターとした出力電力と検
波電圧の特性図である。
FIG. 5 is a characteristic diagram of output power and detection voltage with a bias voltage as a parameter.

【図6】従来例の出力電力検出回路の例を示す回路図で
ある。
FIG. 6 is a circuit diagram showing an example of a conventional output power detection circuit.

【図7】図6に示す従来例の検波電圧の温度特性図であ
る。
7 is a temperature characteristic diagram of the detection voltage of the conventional example shown in FIG.

【図8】同従来例の検波用ダイオードの検波電圧温度特
性図である。
FIG. 8 is a detection voltage temperature characteristic diagram of the detection diode of the conventional example.

【図9】同従来例のバイアス用のダイオードの電圧温度
特性図である。
FIG. 9 is a voltage-temperature characteristic diagram of the biasing diode of the conventional example.

【符号の説明】[Explanation of symbols]

10,20 出力電力検出回路 14 電力増幅器 C1,C2 コンデンサ D1〜D3 ダイオード R- 抵 抗 ZD ツェナーダイオ−ド 10,20 Output power detection circuit 14 Power amplifier C1, C2 capacitors D1 to D3 diodes R- resistance ZD Zener diode

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 電力増幅器の高周波出力が入力される半
波整流器回路を有し、該半波整流器回路は、前記高周波
出力の出力電力のダイナミックレンジに比例した検波電
圧を出力する出力電力検出回路において、該検出回路
は、 基準電位および電源の間に抵抗を介して接続されるツェ
ナーダイオードを含む定電圧回路を有し、該定電圧回路
の出力は、前記半波整流器回路に接続されて該半波整流
器回路にバイアス電圧を印加し、これによって該半波整
流器回路は、所定の温度条件において前記検波出力を前
記出力電力に対する比例関係を維持して出力することを
特徴とする出力電力検出回路。
1. A half-wave rectifier circuit to which a high-frequency output of a power amplifier is input, and the half-wave rectifier circuit outputs an output power detection circuit that outputs a detection voltage proportional to a dynamic range of output power of the high-frequency output. In, the detection circuit has a constant voltage circuit including a Zener diode connected via a resistor between the reference potential and the power supply, the output of the constant voltage circuit is connected to the half-wave rectifier circuit, A bias voltage is applied to the half-wave rectifier circuit, whereby the half-wave rectifier circuit outputs the detection output while maintaining a proportional relationship with the output power under a predetermined temperature condition. .
【請求項2】 請求項1に記載の出力電力検出回路にお
いて、前記温度条件は-30 °C 〜 +85°C に設定され、
前記半波整流器回路の出力電圧で表示する出力電力の誤
差が実質的に±1db 以内であることを特徴とする出力電
力検出回路。
2. The output power detection circuit according to claim 1, wherein the temperature condition is set to −30 ° C. to + 85 ° C.
An output power detection circuit, wherein the error of the output power displayed by the output voltage of the half-wave rectifier circuit is substantially within ± 1db.
JP19729891A 1991-07-12 1991-07-12 Output power detection circuit Withdrawn JPH0522061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19729891A JPH0522061A (en) 1991-07-12 1991-07-12 Output power detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19729891A JPH0522061A (en) 1991-07-12 1991-07-12 Output power detection circuit

Publications (1)

Publication Number Publication Date
JPH0522061A true JPH0522061A (en) 1993-01-29

Family

ID=16372136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19729891A Withdrawn JPH0522061A (en) 1991-07-12 1991-07-12 Output power detection circuit

Country Status (1)

Country Link
JP (1) JPH0522061A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007116651A (en) * 2005-09-22 2007-05-10 Renesas Technology Corp Electronic components for amplifying high frequency power and wireless communication device
US9261543B2 (en) 2011-02-03 2016-02-16 Rohm Co., Ltd. Power detection device and method of driving the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007116651A (en) * 2005-09-22 2007-05-10 Renesas Technology Corp Electronic components for amplifying high frequency power and wireless communication device
US9261543B2 (en) 2011-02-03 2016-02-16 Rohm Co., Ltd. Power detection device and method of driving the same

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A300 Withdrawal of application because of no request for examination

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Effective date: 19981008