JPH05218182A - Wafer supporter device - Google Patents

Wafer supporter device

Info

Publication number
JPH05218182A
JPH05218182A JP1776692A JP1776692A JPH05218182A JP H05218182 A JPH05218182 A JP H05218182A JP 1776692 A JP1776692 A JP 1776692A JP 1776692 A JP1776692 A JP 1776692A JP H05218182 A JPH05218182 A JP H05218182A
Authority
JP
Japan
Prior art keywords
wafer
specific gravity
liquid
thin film
horizontally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1776692A
Other languages
Japanese (ja)
Inventor
Susumu Sawafuji
藤 進 沢
Shinji Shibaoka
岡 伸 治 芝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP1776692A priority Critical patent/JPH05218182A/en
Publication of JPH05218182A publication Critical patent/JPH05218182A/en
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To provide a wafer supporter device capable of horizontally supporting a large diameter wafer without deformation of the same. CONSTITUTION:There is provided a liquid reservoir 14 for storing a specific gravity fluid 12 having a predetermined specific gravity nearly equal to the specific gravity of a wafer 10. Once the wafer 10 is placed on the surface of the specific gravity fluid 12. the wafer 10 rests horizontally in a flowting state when there are balanced the self weight thereof and the floating force of the specific gravity fluid 10. More specifically, since the wafer 10 is rendered to the floating force directed vertically upwardly by the specific gravity fluid 12 over the entire bottom surface thereof, even the large diameter wafer 10 can horizontally be supported without being deformed downward at the center thereof. Hereby, the surface state of the wafer 10 can accurately be measured.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はウエハ支持装置に係り、
特に半導体ウエハの表面形状を検査する際に利用される
のウエハ支持装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer supporting device,
In particular, the present invention relates to a wafer supporting device used when inspecting the surface shape of a semiconductor wafer.

【0002】[0002]

【従来の技術】この種の従来のウエハ支持装置は図2に
示すように、三点の支持支点1、2、3に半導体ウエハ
4を乗せる。即ち、三点を結ぶ面は一つの理想平面を形
成することを利用したウエハ支持装置が使用されてい
る。
2. Description of the Related Art In a conventional wafer supporting apparatus of this type, a semiconductor wafer 4 is placed on three supporting fulcrums 1, 2, 3 as shown in FIG. That is, a wafer support device is used which utilizes the formation of one ideal flat surface for connecting three points.

【0003】[0003]

【発明が解決しようとする課題】しかしながら半導体ウ
エハの大径化の傾向に伴い、前記従来のウエハ支持装置
は三点支持の為、ウエハの自重によりウエハ中央部が下
方に撓み、ウエハの表面形状を正確に測定することが困
難であるという欠点がある。本発明は、このような事情
に鑑みてなされたもので、大径のウエハを撓むことなく
水平に支持できるウエハ支持装置を提供することを目的
とする。
However, as the diameter of the semiconductor wafer is increased, the conventional wafer supporting apparatus is supported at three points, so that the central portion of the wafer is bent downward due to the weight of the wafer and the surface shape of the wafer is reduced. Is difficult to measure accurately. The present invention has been made in view of such circumstances, and an object of the present invention is to provide a wafer support device capable of horizontally supporting a large-diameter wafer without bending.

【0004】[0004]

【課題を解決するための手段】本発明は、前記目的を達
成する為に、液槽に半導体ウエハの比重に近い所定の比
重を有した比重液を貯留し、この比重液上に半導体ウエ
ハを支持することを特徴とする
In order to achieve the above object, the present invention stores a specific gravity liquid having a specific gravity close to that of a semiconductor wafer in a liquid tank, and the semiconductor wafer is placed on the specific gravity liquid. Characterized by supporting

【0005】[0005]

【作用】本発明によれば、半導体ウエハの比重に近い比
重を有した比重液を貯留した液槽を設け、その比重液の
液面にウエハを置くと、ウエハの自重と比重液の浮力と
が釣り合い、浮いた状態で水平に静止させることができ
る。これは、ウエハ底面全体が比重液から鉛直上向きの
浮力を均等に受けるためで、あたかもウエハが水平な平
坦面上に置かれた状態を可能にする。
According to the present invention, when a liquid tank storing a specific gravity liquid having a specific gravity close to that of a semiconductor wafer is provided and the wafer is placed on the surface of the specific gravity liquid, the weight of the wafer and the buoyancy of the specific gravity liquid are increased. Can be balanced and can be left stationary horizontally. This is because the entire bottom surface of the wafer is uniformly subjected to the vertically upward buoyancy force from the specific gravity liquid, which allows the wafer to be placed on a horizontal flat surface.

【0006】これにより、大径のウエハの場合でも、前
記比重液に浮かせた状態で支持することにより、ウエハ
中央部が下方に撓むことがない。
As a result, even in the case of a large-diameter wafer, by supporting it in a state of floating in the specific gravity liquid, the central portion of the wafer does not bend downward.

【0007】[0007]

【実施例】以下、添付図面に従って本発明に係るウエハ
支持装置の好ましい実施例を詳説する。第1図に於い
て、半導体ウエハ10と同一の比重を有するシリコンオ
イル12を貯留した液槽14が設けられている。また、
ポリエチレン製の薄膜16が前記シリコンオイル12の
液面全体に面接している。しかも、前記薄膜16はウエ
ハ10を薄膜16の上に置いた時に、薄膜16に干渉さ
れずにウエハ10がシリコンオイル12からの浮力を受
け、自然に浮く程度の余裕をもって液槽14の側面に設
けられた固定部材18に固定されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of a wafer supporting apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. In FIG. 1, a liquid tank 14 storing silicon oil 12 having the same specific gravity as that of the semiconductor wafer 10 is provided. Also,
The polyethylene thin film 16 is in contact with the entire liquid surface of the silicone oil 12. Moreover, when the wafer 10 is placed on the thin film 16, the thin film 16 receives the buoyancy force from the silicon oil 12 without being interfered with by the thin film 16, and the wafer 10 may be naturally floated on the side surface of the liquid tank 14 with a margin. It is fixed to the fixing member 18 provided.

【0008】そして、前記液槽14の上方にはウエハ1
0の表面状態を検査する光源装置20及び受光装置22
が設けられている。このようなウエハ支持装置の作用を
説明すると、図示していないウエハスライシングマシン
で切断されたウエハ10を前記シリコンオイル12に面
接した前記薄膜16上の中央に置く。前記ウエハ10は
自重により前期薄膜16を介して前期シリコンオイル1
2に沈もうとする。しかし、ウエハ10の自重とシリコ
ンオイル12の浮力とが釣り合ったとき、薄膜16を介
してシリコンオイル12に浮いた状態で水平に静止す
る。
The wafer 1 is provided above the liquid tank 14.
Light source device 20 and light receiving device 22 for inspecting the surface state of 0
Is provided. The operation of such a wafer supporting device will be described. A wafer 10 cut by a wafer slicing machine (not shown) is placed at the center of the thin film 16 that is in contact with the silicon oil 12. Due to its own weight, the wafer 10 passes through the thin film 16 and the silicon oil 1
I try to sink into 2. However, when the weight of the wafer 10 and the buoyancy of the silicon oil 12 are in balance, the wafer 10 floats on the silicon oil 12 through the thin film 16 and stands horizontally.

【0009】これはウエハ10がおしのけたシリコンオ
イル12の重さに等しい浮力がウエハ10の底面全体に
対し鉛直上向きに均等に働くためである。これにより、
大径のウエハでも従来のウエハ支持装置の欠点であった
大径ウエハの中央部が下方に撓むことがなくなる。ま
た、薄膜をシリコンオイル液面に面接することにより、
振動等によりウエハがバランスをくずしシリコンオイル
中に沈むことを防止できると共に、ウエハが溶液に汚染
されることもなくなる。
This is because the buoyancy, which is equal to the weight of the silicon oil 12 deposited on the wafer 10, acts evenly vertically upward on the entire bottom surface of the wafer 10. This allows
Even with a large-diameter wafer, the central portion of the large-diameter wafer, which is a drawback of the conventional wafer supporting apparatus, does not bend downward. Also, by contacting the thin film with the silicone oil surface,
It is possible to prevent the wafer from being unbalanced and sinking in the silicon oil due to vibration and the like, and also to prevent the wafer from being contaminated with the solution.

【0010】このようにシリコンオイル12に支持され
たウエハ10の表面形状を調べる場合は、例えば光源装
置20からウエハ10の大気側の上面に光束を照射し、
反射した反射光を受光装置22で受け、干渉縞の状態を
測定する。ウエハ10の表面が完全に平坦であれば、等
間隔に並んだ直線状の干渉縞が得られ、もし、ウエハ1
0の表面が反っていれば、干渉縞は等間隔でなくなると
共に、直線状でなくなるように、干渉縞の状態を測定す
ることによりウエハ表面の状態を知ることができる。
When the surface shape of the wafer 10 supported by the silicon oil 12 is to be examined in this way, for example, the light source device 20 irradiates the upper surface of the wafer 10 on the atmosphere side with a light beam,
The reflected light reflected is received by the light receiving device 22, and the state of the interference fringe is measured. If the surface of the wafer 10 is completely flat, linear interference fringes arranged at equal intervals can be obtained.
If the surface of 0 is warped, the interference fringes are not evenly spaced and are not linear, so that the state of the wafer fringe can be known by measuring the state of the interference fringes.

【0011】この場合、ウエハ10は常に水平に支持さ
れることが必要であり、本発明のウエハ支持装置を使用
すれば、ウエハ10は常に水平に支持されるので、ウエ
ハ10の表面の状態を正確に測定することができる。
尚、本実施例では比重液としてシリコンオイルを使用し
たが、シリコンオイルに限ったものではなく、例えば水
にショ糖を溶かした溶液等のウエハの比重に近く、しか
もウエハが浮く比重を有した流体であればよい。また、
比重液は単一の流体に限らず、溶媒に溶質を溶解し、所
望の比重を有した比重液を調製してもよい。
In this case, it is necessary that the wafer 10 is always supported horizontally, and if the wafer supporting apparatus of the present invention is used, the wafer 10 is always supported horizontally, so that the state of the surface of the wafer 10 is maintained. Can be measured accurately.
Although silicon oil was used as the specific gravity liquid in this example, the specific gravity is not limited to silicon oil, and for example, the specific gravity of the wafer such as a solution of sucrose in water is close to that of the wafer, and the wafer has a specific gravity of floating. Any fluid may be used. Also,
The specific gravity liquid is not limited to a single fluid, but a solute may be dissolved in a solvent to prepare a specific gravity liquid having a desired specific gravity.

【0012】また、本実施例では薄膜としてポリエチレ
ン製のものを使用したが、ポリエチレンに限定したもの
ではなく、前記したようにウエハを薄膜の上に置いた
時、薄膜に干渉されずにウエハが比重液からの浮力を受
け、自然に浮く程度に伸縮性を有した薄膜か、または薄
膜を液槽に固定するときに薄膜を緊張せずに余裕をもた
せておけばよい。
Although the thin film made of polyethylene is used in this embodiment, the thin film is not limited to polyethylene, and when the wafer is placed on the thin film as described above, the wafer is not interfered with by the thin film. It is sufficient that the thin film has elasticity so that it naturally floats by receiving the buoyancy force from the specific gravity liquid, or when the thin film is fixed to the liquid tank, the thin film is not strained and has a margin.

【0013】また、本実施例ではウエハの表面測定に干
渉計を使用したが、特にこの方法に限定したものではな
く、静電容量センサ等の非接触式センサであればよい。
Although the interferometer is used for measuring the surface of the wafer in this embodiment, the method is not particularly limited to this method, and any non-contact type sensor such as a capacitance sensor may be used.

【0014】[0014]

【発明の効果】以上説明したように本発明に係わるウエ
ハ支持装置によれば、半導体ウエハの比重に近い所定の
比重を有した比重液を貯留した液槽を設け、前期比重液
にウエハが浮くようにしたので、ウエハは自重と比重液
の浮力が釣り合ったとき、浮いた状態で水平に支持され
る。即ち、ウエハは比重液から鉛直上向きの浮力をウエ
ハ底面全体に均等に受ける。
As described above, according to the wafer supporting apparatus of the present invention, the liquid tank for storing the specific gravity liquid having a specific gravity close to that of the semiconductor wafer is provided, and the wafer floats in the specific gravity liquid in the previous period. Therefore, when the weight of the wafer is balanced with the buoyancy of the specific gravity liquid, the wafer is horizontally supported in a floating state. That is, the wafer receives the buoyancy vertically upward from the specific gravity liquid evenly on the entire bottom surface of the wafer.

【0015】これにより、大径のウエハの場合でもウエ
ハ中央部が下方に撓むということがなくなり、ウエハ表
面の状態を正確に測定することができる。
As a result, even in the case of a large-diameter wafer, the central portion of the wafer does not bend downward, and the state of the wafer surface can be accurately measured.

【図面の簡単な説明】[Brief description of drawings]

【図1】第1図は本発明に係わるウエハ支持装置の説明
FIG. 1 is an explanatory view of a wafer supporting apparatus according to the present invention.

【図2】第2図は従来のウエハ支持装置の説明図FIG. 2 is an explanatory view of a conventional wafer supporting device.

【符号の説明】[Explanation of symbols]

10…ウエハ 12…シリコンオイル 14…液槽 16…薄膜 10 ... Wafer 12 ... Silicon oil 14 ... Liquid tank 16 ... Thin film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】液槽に半導体ウエハの比重に近い所定の比
重を有した比重液を貯留し、この比重液上に半導体ウエ
ハを支持することを特徴とするウエハ支持装置。
1. A wafer supporting apparatus characterized in that a specific gravity liquid having a specific gravity close to that of a semiconductor wafer is stored in a liquid tank, and the semiconductor wafer is supported on the specific gravity liquid.
【請求項2】前期液槽に貯留された前期比重液の液面全
体に面接した薄膜の上に半導体ウエハを支持することを
特徴とする請求項1のウエハ支持装置。
2. The wafer supporting device according to claim 1, wherein the semiconductor wafer is supported on a thin film which is in contact with the entire liquid surface of the specific gravity liquid stored in the previous liquid tank.
JP1776692A 1992-02-03 1992-02-03 Wafer supporter device Pending JPH05218182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1776692A JPH05218182A (en) 1992-02-03 1992-02-03 Wafer supporter device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1776692A JPH05218182A (en) 1992-02-03 1992-02-03 Wafer supporter device

Publications (1)

Publication Number Publication Date
JPH05218182A true JPH05218182A (en) 1993-08-27

Family

ID=11952836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1776692A Pending JPH05218182A (en) 1992-02-03 1992-02-03 Wafer supporter device

Country Status (1)

Country Link
JP (1) JPH05218182A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019439A (en) * 2003-06-23 2005-01-20 Tokyo Seimitsu Co Ltd Method and device for receiving and delivering wafer and wafer processing device using them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005019439A (en) * 2003-06-23 2005-01-20 Tokyo Seimitsu Co Ltd Method and device for receiving and delivering wafer and wafer processing device using them

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