JPH05217898A - Planar-type magnetron sputtering apparatus - Google Patents

Abstract

PURPOSE:To provide a planar-type magnetron sputtering apparatus that sputters a target uniformly and forms a uniform sputtering film on a substrate when the face of the target is full sputtered. CONSTITUTION:In a planar-type magnetron sputtering apparatus, a magnetron magnet field is provided by a magnet 4 included in a planar-type magnetron sputtering gun. The planar-type magnetron sputtering apparatus has a rotary mechanism 5 for rotating the magnet 4 in parallel with a target 1, and a shifting mechanism 6 for shifting the rotational center of the rotating magnet 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a planar type magnetron sputtering apparatus, and more particularly to semiconductor manufacturing, LC
It can be applied to a planar type magnetron sputtering device for a film forming process by sputtering in the production of D, etc.
In particular, it relates to a planar magnetron sputtering apparatus capable of uniformly sputtering a target when the entire surface of the target is sputtered.

In recent years, it has been known that the film quality of a sputtered film is changed by the magnetic force strength, the discharge voltage, the power, etc. in the sputtering film forming process. From a macro perspective, the grain size, mating property, specific resistance, storage of sputtering gas, etc. change. By the way, the sputtering method is said to be a relatively stable film forming method. However, since much dust is likely to be generated during sputtering, the target surface is sputtered over the entire surface to reduce dust.However, the quality of the sputtered film formed by unevenly scraping the target is not uniform at the center and the periphery. There is a drawback that the difference between the two is likely to occur.

Therefore, when the entire surface of the target is sputtered, the target can be uniformly sputtered,
There is a demand for a planar type magnetron sputtering apparatus that can make the quality of the sputtered film uniform.

[0004]

2. Description of the Related Art In a conventional planar type magnetron sputtering apparatus, a planer type target is used to devise the arrangement of magnets and the whole surface is rotated by rotating one rotation center, so that the generation of dust can be suppressed. It has the advantage that it can.

[0005]

However, in the above-mentioned conventional planar type magnetron sputtering apparatus, since the magnet is rotated about one rotation center to perform the entire surface sputtering, the rotation center is as shown in FIG. The target portion is always sputtered, and it is difficult to uniformly sputter the target, and there is a problem that it is difficult to make the film quality (specific resistance, etc.) of the sputtered film on the substrate to be uniform. Specifically, the film thickness of the center part of the sputtered film on the substrate to be formed is higher than that of the peripheral part, and the film quality (specific resistance etc.) of the sputtered film changes between the peripheral part and the central part. I had done it. For this reason, the magnetic force in the central portion was weakened or the plasma was broadened by a weak magnet, but the adjustment was very troublesome.

Therefore, the present invention provides a planar type magnetron sputtering apparatus capable of uniformly sputtering the target when the target surface is entirely sputtered and making the quality of the sputtered film on the substrate uniform. It is intended to be provided.

[0007]

In order to achieve the above object, a planar type magnetron sputtering apparatus according to the present invention has a magnet which constitutes a planar type magnetron sputtering gun, and a magnetron magnetic field is formed by the magnet. The apparatus has a rotating mechanism for rotating the magnet parallel to the target and a swinging mechanism for swinging the rotation center of the rotating magnet.

In the present invention, the oscillating cycle may be configured to be asynchronous with the rotation of the entire magnet. In this case, the target may be uniformly sputtered so as not to be biased. It is possible and preferable.
In the present invention, the swinging amplitude may be appropriately adjusted, and in this case, it is preferable that the swinging width can be set to an optimum value for sputtering.

[0009]

In the prior art, since the entire surface is sputtered using the planar type target, the distribution of magnets is arranged to satisfy the distribution, and the entire surface is sputtered only at one rotation center. Therefore, the surroundings are alternately sputtered and not sputtered due to the structure of the magnet.
The center of rotation is always sputtered, and the sputtered film on the substrate to be formed is thicker in the central part than in the peripheral part, and the film quality of the sputtered film is likely to be uneven between the peripheral part and the central part.

On the other hand, in the present invention, a rotating mechanism for rotating the magnet parallel to the target is provided as in the conventional case,
A large area erosion is formed by rotating the whole magnetron magnet magnet sputter magnet, and a swinging mechanism that swings the rotation center of the rotating magnet is provided to swing the magnet in the central portion. Therefore, the target can be uniformly sputtered over the entire surface without significantly changing the overall structure of the magnet, and the generation of dust can be suppressed. Moreover, it is not necessary to particularly weaken the magnetic force of the magnet near the center, and the magnetic field at the center can be configured under the same conditions as those at the periphery, so the film quality at the center and the periphery of the sputtered film on the substrate to be formed can be improved. Can be uniform.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing the configuration of a planar type magnetron sputtering apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing a simulation of a sputtered region of a target when the swing and the rotation are combined according to the embodiment of the present invention. In FIGS. 1 and 2, 1 is a target installed on a backing plate 3 with a water cooling jacket of a vacuum container 2, 4 is a magnet of a planar magnetron sputtering gun, and 5 is installed around the magnet 4. A rotary motor for rotating the magnet 4 in parallel with the target 1, and a swinging motor 6 installed at the center of the magnet 4 for swinging the rotation center of the magnet 4.

In this embodiment, a rotation motor 5 for rotating the magnet 4 in parallel with the target 1 as in the conventional case.
Is provided to form a large area erosion by rotating the magnet 4 as a whole, and further, a swing motor 6 for swinging the rotation center of the rotating magnet 4 is provided to swing the rotation center of the magnet 4. As shown in FIG. 3, the target 1 can be uniformly sputtered on the entire surface without significantly changing the overall magnet configuration, and the generation of dust can be suppressed. Moreover, since it is not necessary to particularly weaken the magnetic force of the magnet 1 near the center, and the magnetic field at the center can be configured under the same conditions as those at the periphery, the film quality in the central portion and the peripheral portion of the sputtered film on the substrate to be deposited is improved. Can be made uniform.

[0013]

According to the present invention, when the target surface is entirely sputtered, the target can be uniformly sputtered, and the quality of the sputtered film on the substrate can be made uniform. is there.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration of a planar type magnetron sputtering apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a simulation of a sputtered region of a target when the swing and the rotation are combined according to the embodiment of the present invention.

FIG. 3 is a cross-sectional view showing a state of erosion formation of a target according to an embodiment of the present invention.

FIG. 4 is a cross-sectional view showing a state of erosion formation of a target in the case of only rotation for explaining the problem of the conventional example.

[Explanation of symbols]

 1 target 2 vacuum container 3 backing plate with water cooling jacket 4 magnet 5 rotation motor 6 swing motor

Claims (2)

[Claims] 1. A magnet (4) which constitutes a planar type magnetron sputtering gun, and the magnet (4).
In a planar type magnetron sputtering apparatus in which a magnetron magnetic field is constituted by, a rotating mechanism (5) for rotating the magnet (4) in parallel to the target (1) and a rotation center of the rotating magnet (4) are shaken. A planar magnetron sputtering apparatus having a swinging mechanism (6) for moving. 2. The planar magnetron sputtering apparatus according to claim 1, wherein the oscillating cycle is asynchronous with the rotation of the entire magnet.