JPH0521228B2 - - Google Patents

Info

Publication number
JPH0521228B2
JPH0521228B2 JP9803285A JP9803285A JPH0521228B2 JP H0521228 B2 JPH0521228 B2 JP H0521228B2 JP 9803285 A JP9803285 A JP 9803285A JP 9803285 A JP9803285 A JP 9803285A JP H0521228 B2 JPH0521228 B2 JP H0521228B2
Authority
JP
Japan
Prior art keywords
methyl
group
alkali
polymer
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9803285A
Other languages
Japanese (ja)
Other versions
JPS61256347A (en
Inventor
Hisashi Sugyama
Kazuo Nate
Takashi Inoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9803285A priority Critical patent/JPS61256347A/en
Priority to US06/859,370 priority patent/US4745169A/en
Priority to EP86106238A priority patent/EP0204963B1/en
Priority to DE8686106238T priority patent/DE3687479T2/en
Publication of JPS61256347A publication Critical patent/JPS61256347A/en
Priority to US07/893,946 priority patent/US5264319A/en
Publication of JPH0521228B2 publication Critical patent/JPH0521228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の利用分野〕 本発明は、光及び放射線感応性材料等の機能性
高分子材料として極めて有用な新規重合体に関す
る。更に詳しくは、一般式(1)で表わされる単位が
シロキサン骨格の40%以上であるアルカリ可溶性
シロキサン重合体に関するものである。 〔発明の背景〕 半導体素子、集積回路等の電子部品の製作に
は、光および放射線を利用したエツチング技術に
よる微細加工が行なわれている。その時用いるレ
ジスト材料には、解像度に優れていることからフ
エノール樹脂やポリビニルフエノールのようなア
ルカリ可溶性重合体を基本重合体として含むアル
カリ現像型レジストが主流を占めている。例え
ば、フエノールノボラツク樹脂とo−キノンジア
ジド類との組成物はポジ型ホトレジストであり、
ポリビニルフエノールとビスアジド類との組成物
はネガ型ホトレジストになることが知られてい
る。 一方、半導体素子等の配線パターンの微細化に
伴ない、レジスト層をパターニングした後の露出
した下地のエツチングは、湿式エツチングにかわ
つてドライエツチングが採用されつつある。従つ
てレジスト材料には、ドライエツチングに耐える
材料であることが要求される。例えば、下地が有
機物の場合、酸素プラズマによりエツチングする
が、従来のレジスト材料は酸素プラズマ耐性が弱
く、その特性向上が強く望まれていた。 なお、アルカリ現象型レジストに関する文献と
しては、ジエー・シー・ストリエータ(J.C.
Strieter)著「コダツク・マイクロエレクトロニ
クス・セミナー・プロシーデイングス」(Kodak
Microelectronics Seminor Proceedings)116、
(1976)等が挙げられる。 〔発明の目的〕 本発明の目的は、上記した従来技術の欠点をな
くし、酸素プラズマ耐性の優れたアルカリ可溶性
シロキサン重合体を提供するにある。 〔発明の概要〕 酸素プラズマ耐性の優れた重合体としては、シ
ロキサン重合体がある。また、アルカリ可溶性重
合体としては、フエノール樹脂やポリビニルフエ
ノールのようなフエノール性水酸基を有する重合
体が知られている。 そこで、本発明者は主鎖がシロキサン骨格でか
つ側鎖にフエノール性水酸基を持つ重合体を種々
合成した結果、下記一般式(1)で表わされる単位を
40%以上シロキサン骨格に含むシロキサン重合体
が上記目的を満足する重合体であることを見い出
した。 ここで、上記一般式(1)中、R1は水素又は芳香
族基以外の一価の有機基であつて後者は例えばア
ルキル基(たとえば炭素数1〜5のアルキル基
等)、ビニル基あるいはこれら置換体であり、な
かでも好ましくは−CH3、−C2H5、−C3H7であ
り、R2、R3はH、Clまたは一価の有機基であつ
て、この有機基は例えばアルキル基(たとえば、
炭素数1〜5のアルキル基等)、ビニル基、芳香
族基(たとえば
[Field of Application of the Invention] The present invention relates to a novel polymer that is extremely useful as a functional polymer material such as a light- and radiation-sensitive material. More specifically, it relates to an alkali-soluble siloxane polymer in which units represented by general formula (1) account for 40% or more of the siloxane skeleton. [Background of the Invention] In the production of electronic components such as semiconductor elements and integrated circuits, microfabrication is performed using etching techniques that utilize light and radiation. Most of the resist materials used at this time are alkali-developable resists containing an alkali-soluble polymer such as phenolic resin or polyvinylphenol as a basic polymer because of their excellent resolution. For example, a composition of phenol novolak resin and o-quinone diazides is a positive photoresist;
It is known that compositions of polyvinylphenol and bisazides produce negative photoresists. On the other hand, as the wiring patterns of semiconductor devices and the like become finer, dry etching is being adopted instead of wet etching for etching the exposed base after patterning the resist layer. Therefore, the resist material is required to be resistant to dry etching. For example, when the underlying material is organic, it is etched by oxygen plasma, but conventional resist materials have poor resistance to oxygen plasma, and there has been a strong desire to improve their properties. In addition, as a literature regarding alkaline phenomenon type resist, JC Streater (JC
"Kodak Microelectronics Seminar Proceedings" (Kodak Strieter)
Microelectronics Seminar Proceedings) 116,
(1976), etc. [Object of the Invention] An object of the present invention is to eliminate the drawbacks of the prior art described above and to provide an alkali-soluble siloxane polymer having excellent oxygen plasma resistance. [Summary of the Invention] Siloxane polymers are examples of polymers with excellent oxygen plasma resistance. Further, as alkali-soluble polymers, polymers having phenolic hydroxyl groups such as phenolic resins and polyvinylphenols are known. Therefore, the present inventor synthesized various polymers having a siloxane skeleton in the main chain and a phenolic hydroxyl group in the side chain, and as a result, the unit represented by the following general formula (1) was synthesized.
It has been found that a siloxane polymer containing 40% or more in the siloxane skeleton is a polymer that satisfies the above objectives. Here, in the above general formula (1), R 1 is hydrogen or a monovalent organic group other than an aromatic group, and the latter is, for example, an alkyl group (for example, an alkyl group having 1 to 5 carbon atoms), a vinyl group, or Among these substituents, -CH 3 , -C 2 H 5 , -C 3 H 7 are preferred, and R 2 and R 3 are H, Cl or a monovalent organic group, and this organic group is, for example, an alkyl group (e.g.
C1-C5 alkyl groups, etc.), vinyl groups, aromatic groups (e.g.

【式】【formula】

〔発明の実施例〕[Embodiments of the invention]

以下に本発明を実施例によつて具体的に説明す
るが、本発明はこの実施例に限定されるものでは
ない。 実施例 ポリ(メチル−p−メトキシベンジルシロキサ
ン−co−メチルp−ヒドロキシベンジルシロキ
サン)について。 (a) メチルジクロロ−p−メトキシベンジルシラ
ンの合成 撹拌機、還流管、滴下ロート、及び温度計を
備えた1三つ口フラスコに、マグネシウム粉
末23.3g(1.00mol)、メチルトリクロロシラン
82.6g(0.640mol)及びジエチルエーテル200
mlを入れた。ヨウ素及びジブロモエタンでマグ
ネシウムを活性化した後、フラスコを10℃から
0℃に冷却した。滴下ロートより、塩化p−メ
トキシベンジル50.0g(0.319mol)とジエチル
エーテル300mlの混合物を撹拌しながら10℃か
ら0℃の間で4時間かけて滴下した。室温でさ
らに1時間熟成した後、過剰のマグネジウムと
塩化マグネシウムを吸引過によつて除去し
た。液を蒸留して、目的物を48.8g
(0.208mol)得た。収率は65%であつた。 なお、目的物の物性は、以下のとおりであつ
た。 沸点:86〜88℃/2mmHg NMR:(60MHz、CCl4、CH2Cl2δ5.33)δ0.79
(3H、S)、δ2.68(2H、S)、δ3.84(3H、
S)、δ6.80(2H、d、J=9Hz)、δ7.18(2H、
d、J=9Hz)、 IR(νcm-1)1620、1520、1480、1310、
1260、1190、1100、1050、850、810、755。 (b) メチル−p−メトキシベンジルシロキサン三
量体の合成 撹拌機、還流管、滴下ロートを備えた1三
つ口フラスコに、水200mlを入れた。撹拌しな
がら滴下ロートより、メチルジクロロ−p−メ
トキシベンジルシラン85.6g(0.364mol)、エ
チルエーテル200mlの混合物を室温に保ちなが
ら4時間かけて滴下した。さらに1時間熟成し
た後ジエチルエーテルで有機物を抽出し、洗浄
水が中性になるまで水洗した。ジエチルエーテ
ル溶液を硫酸ナトリウムで乾燥し、ジエチルエ
ーテルを留去し、さらに水素化カルシウムを入
れて蒸留して目的物を20.3g(37.5mmol)得
た。収率は、31%であつた。 なお、目的物の物性は、以下のとおりであつ
た。 沸点:241℃/0.8mmHg〜253℃/0.3mmHg NMR:(60MHz、CCl4、CH2Cl2δ5.33)δ−
0.02、δ0.03、δ0.16(9H、SX3)、δ1.96、2.07
(6H、SX2)、δ3.79(9H、S)、δ6.74(CH、
d、J=9Hz)、δ6.98(6H、d、J=9Hz)、 IR(νcm-1)1620、1520、1470、1305、
1260、1220、1185、1090、1030、840、815、
770。 (c) ポリ(メチル−p−メトキシベンジルシロキ
サン)の合成 マグネツト棒を入れた100mlナス型フラスコ
に、メチル−p−メトキシベンジルシロキサン
三量体9.0g(17mmol)と水酸化テトラメチ
ルアンモニウム45mg(0.5重量%)を入れて栓
をした。80℃に保つた油浴にフラスコを入れ、
マグネツトで撹拌した。反応開始後4分で重量
平均分子量は5000に、10分で10000に、20分で
14000に、30分で16000に、60分で19000になつ
た。従つて、適当な時間反応させてからフラス
コを油浴から取り出し水で冷却して、望みの重
量平均分子量の目的物を得ることができる。フ
ラスコ内の内容物は、次の反応にそのまま使用
した。 なお、目的物の物性は、以下のとおりであつ
た。 NMR:(60MHz、CCl4、CH2Cl2、δ5.33)
δ0.00(3H、br.S)、δ1.94(2H、br.S)δ3.71、
δ3.80(3H、SX2)、δ6.82(4H、br.S)、 IR(νcm-1)2975、2850、1620、1520、
1475、1305、1260、1225、1190、1090、
1040、845、810、775、755。 (d) ポリ(メチル−p−メトキシベンジルシロキ
サン−co−メチル−p−ヒドロキシベンジル
シロキサン)の合成 ポリ(メチル−p−メトキシベンジルシロキ
サン)の入つたフラスコに、還流管を取りつ
け、系内を窒素で置換した。フラスコ内にクロ
ロホルム30mlを入れ、ポリマーを均一に溶液に
し、トリメチルシリルヨードを一定量加えた。
室温で3時間撹拌し、メタノール20mlを加え、
さらに2時間撹拌した。反応終了後、低沸点物
を室温で減圧下で留去し、テトラヒドロフラン
及びジエチルエーテルで抽出した。抽出液を亜
硫酸水素ナトリウム水溶液、炭酸水素ナトリウ
ム水溶液、食塩水で洗い、溶媒を減圧下に加熱
留去して目的物を得た。メトキシ基に対して
1.5当量のトリメチルシリルヨードを反応させ
ることにより、メトキシ基は100%水酸基に変
換された。また、1.3当量で90%、0.76当量で
71%、0.65当量で58%、0.47当量で41%の変換
率であつた。 なお、目的物の物性は、以下のとおりであつ
た。 融点:(重量平均分子量10000、80%OH体)53
〜68℃ NMR:(60MHz、CD3CSCD3、CH2Cl2δ5.68)、
δ−0.07(br.S、CH3)、δ1.85(br.S、−CH2
−)、δ4.00(br.S、−OCH3)、δ6.61(br.S、環
プロトン)、δ8.81(br.S、−OH) IR(νcm-1)3320、1620、1510、1450、
1270、1240、1180、1070、840、800。 (e) 溶解性 ポリ(メチル−p−メトキシベンジルシロキ
サン−co−メチル−p−ヒドロキシベンジル
シロキサン)の溶解性を、代表的な汎用有機溶
剤で調べた。その結果、メタノール、テトラヒ
ドロフラン、N,N−ジメチルアセトアミド、
2−メチルシクロヘキサノン、酢酸イソアミ
ル、メチルセロソルブ、ジメチルスルホキシド
には溶解したが、トルエン、ヘキサン、四塩化
炭素には不溶であつた。 一方、水溶液では水酸化テトラメチルアンモ
ニウム水溶液、水酸化カリウム水溶液に溶解し
た。 (f) 酸素プラズマ耐性 ポリ(メチル−p−メトキシベンジルシロキ
サン−co−メチル−p−ヒドロキシベンジル
シロキサン)の5重量%2−メチルシクロヘキ
サノン溶液を、シリコン基板上にスピンナ塗布
して厚さ0.2μmの上記ポリマ塗膜を形成した。
この塗膜を90℃で30分間ベークした。続いて酸
素プラズマ(条件:酸素圧0.5torr、真空度
10-4torr、RF300W)に10分間さらしたが全く
膜べりしなかつた。 〔発明の効果〕 以上述べたように本発明のシロキサン重合体
は、汎用有機溶剤に可溶であるので成膜ができ、
またアルカリ成水溶液に溶解するので、o−キノ
ンジアジド類と組み合わせてアルカリ現象ポジ型
ホトレジスト、ビスアジド類と組合せてアルカリ
現象ネガ型ホトレジストにすることができる。 さらに本発明のシロキサン重合体そのものはア
ルカリ現像ネガ型電子線レジストとして使用で
き、ポリ(オレフインスルホン)との組み合わせ
はアルカリ現像ポジ型電子線レジストとして使用
できる。
EXAMPLES The present invention will be specifically explained below using Examples, but the present invention is not limited to these Examples. Examples For poly(methyl-p-methoxybenzylsiloxane-co-methyl p-hydroxybenzylsiloxane). (a) Synthesis of methyldichloro-p-methoxybenzylsilane In a three-necked flask equipped with a stirrer, reflux tube, dropping funnel, and thermometer, 23.3 g (1.00 mol) of magnesium powder and methyltrichlorosilane were placed.
82.6g (0.640mol) and diethyl ether 200
I put ml. After activating the magnesium with iodine and dibromoethane, the flask was cooled from 10°C to 0°C. From the dropping funnel, a mixture of 50.0 g (0.319 mol) of p-methoxybenzyl chloride and 300 ml of diethyl ether was added dropwise with stirring at a temperature between 10° C. and 0° C. over 4 hours. After aging for an additional hour at room temperature, excess magnesium and magnesium chloride were removed by suction filtration. Distill the liquid to obtain 48.8g of the target product.
(0.208 mol) was obtained. The yield was 65%. The physical properties of the target product were as follows. Boiling point: 86-88℃/2mmHg NMR: (60MHz, CCl 4 , CH 2 Cl 2 δ5.33) δ0.79
(3H, S), δ2.68 (2H, S), δ3.84 (3H,
S), δ6.80 (2H, d, J=9Hz), δ7.18 (2H,
d, J=9Hz), IR (νcm -1 ) 1620, 1520, 1480, 1310,
1260, 1190, 1100, 1050, 850, 810, 755. (b) Synthesis of methyl-p-methoxybenzylsiloxane trimer 200 ml of water was placed in a three-necked flask equipped with a stirrer, a reflux tube, and a dropping funnel. While stirring, a mixture of 85.6 g (0.364 mol) of methyldichloro-p-methoxybenzylsilane and 200 ml of ethyl ether was added dropwise from the dropping funnel over 4 hours while maintaining the temperature at room temperature. After further aging for 1 hour, organic substances were extracted with diethyl ether and washed with water until the washing water became neutral. The diethyl ether solution was dried over sodium sulfate, diethyl ether was distilled off, and calcium hydride was added and distilled to obtain 20.3 g (37.5 mmol) of the target product. The yield was 31%. The physical properties of the target product were as follows. Boiling point: 241℃/0.8mmHg ~ 253℃/0.3mmHg NMR: (60MHz, CCl4 , CH2Cl2δ5.33 )δ−
0.02, δ0.03, δ0.16 (9H, SX3), δ1.96, 2.07
(6H, SX2), δ3.79 (9H, S), δ6.74 (CH,
d, J = 9Hz), δ6.98 (6H, d, J = 9Hz), IR (νcm -1 ) 1620, 1520, 1470, 1305,
1260, 1220, 1185, 1090, 1030, 840, 815,
770. (c) Synthesis of poly(methyl-p-methoxybenzylsiloxane) In a 100ml eggplant-shaped flask containing a magnetic rod, 9.0g (17mmol) of methyl-p-methoxybenzylsiloxane trimer and 45mg (0.5mg) of tetramethylammonium hydroxide were added. % by weight) and capped. Place the flask in an oil bath kept at 80°C.
Stir with a magnet. The weight average molecular weight decreased to 5,000 in 4 minutes after the reaction started, to 10,000 in 10 minutes, and to 10,000 in 20 minutes.
It rose to 14,000, then 16,000 in 30 minutes, and 19,000 in 60 minutes. Therefore, after reacting for a suitable period of time, the flask is removed from the oil bath and cooled with water to obtain the desired product with the desired weight average molecular weight. The contents in the flask were used as they were in the next reaction. The physical properties of the target product were as follows. NMR: (60MHz, CCl4 , CH2Cl2 , δ5.33 )
δ0.00 (3H, br.S), δ1.94 (2H, br.S) δ3.71,
δ3.80 (3H, SX2), δ6.82 (4H, br.S), IR (νcm -1 ) 2975, 2850, 1620, 1520,
1475, 1305, 1260, 1225, 1190, 1090,
1040, 845, 810, 775, 755. (d) Synthesis of poly(methyl-p-methoxybenzylsiloxane-co-methyl-p-hydroxybenzylsiloxane) A reflux tube was attached to the flask containing poly(methyl-p-methoxybenzylsiloxane), and the system was flushed with nitrogen. Replaced with. 30 ml of chloroform was placed in a flask to make a uniform solution of the polymer, and a certain amount of trimethylsilyl iodide was added.
Stir at room temperature for 3 hours, add 20ml of methanol,
The mixture was further stirred for 2 hours. After the reaction was completed, low-boiling substances were distilled off at room temperature under reduced pressure, and the mixture was extracted with tetrahydrofuran and diethyl ether. The extract was washed with an aqueous sodium bisulfite solution, an aqueous sodium bicarbonate solution, and brine, and the solvent was distilled off under reduced pressure with heating to obtain the desired product. for methoxy group
By reacting with 1.5 equivalents of trimethylsilyl iodo, 100% of the methoxy groups were converted to hydroxyl groups. Also, 90% at 1.3 equivalents and 90% at 0.76 equivalents
The conversion was 71%, 58% with 0.65 equivalents, and 41% with 0.47 equivalents. The physical properties of the target product were as follows. Melting point: (weight average molecular weight 10000, 80% OH form) 53
~68℃ NMR: (60MHz, CD3CSCD3 , CH2Cl2δ5.68 ) ,
δ−0.07 (br.S, CH 3 ), δ1.85 (br.S, −CH 2
−), δ4.00 (br.S, −OCH 3 ), δ6.61 (br.S, ring proton), δ8.81 (br.S, −OH) IR (νcm -1 ) 3320, 1620, 1510 , 1450,
1270, 1240, 1180, 1070, 840, 800. (e) Solubility The solubility of poly(methyl-p-methoxybenzylsiloxane-co-methyl-p-hydroxybenzylsiloxane) was investigated using typical general-purpose organic solvents. As a result, methanol, tetrahydrofuran, N,N-dimethylacetamide,
It was soluble in 2-methylcyclohexanone, isoamyl acetate, methyl cellosolve, and dimethyl sulfoxide, but insoluble in toluene, hexane, and carbon tetrachloride. On the other hand, as an aqueous solution, it was dissolved in a tetramethylammonium hydroxide aqueous solution and a potassium hydroxide aqueous solution. (f) Oxygen plasma resistance A 5% by weight solution of poly(methyl-p-methoxybenzylsiloxane-co-methyl-p-hydroxybenzylsiloxane) in 2-methylcyclohexanone was coated onto a silicon substrate with a spinner to a thickness of 0.2 μm. The above polymer coating was formed.
This coating film was baked at 90°C for 30 minutes. Next, oxygen plasma (conditions: oxygen pressure 0.5 torr, degree of vacuum
10 -4 torr, RF300W) for 10 minutes, but the film did not deteriorate at all. [Effects of the Invention] As described above, the siloxane polymer of the present invention is soluble in general-purpose organic solvents, so it can be formed into a film.
Furthermore, since it is soluble in an alkaline aqueous solution, it can be combined with o-quinone diazides to produce an alkaline phenomenon positive photoresist, and in combination with bisazides to produce an alkaline phenomenon negative photoresist. Furthermore, the siloxane polymer of the present invention itself can be used as an alkali-developed negative-working electron beam resist, and the combination with poly(olefin sulfone) can be used as an alkali-developed positive-working electron beam resist.

Claims (1)

【特許請求の範囲】 1 一般式(1)で表わされる単位がシロキサン骨格
の40%以上を占めているアルカリ可溶性シロキサ
ン重合体。 (但し、一般式(1)中R1はH又は芳香族基以外の
一価の有機基、R2、R3はH、Cl又は一価の有機
基、lは1〜6の整数、kは1あるいは2であ
る。) 2 特許請求の範囲第1項において、一般式(1)の
R1がメチル基、R2及びR3が水素、l=1、k=
1、OH基がベンゼン環のp−位置に結合してい
るアルカリ可溶性シロキサン重合体。
[Scope of Claims] 1. An alkali-soluble siloxane polymer in which units represented by general formula (1) account for 40% or more of the siloxane skeleton. (However, in general formula (1), R 1 is H or a monovalent organic group other than an aromatic group, R 2 and R 3 are H, Cl, or a monovalent organic group, l is an integer of 1 to 6, k is 1 or 2.) 2 In claim 1, the general formula (1)
R 1 is a methyl group, R 2 and R 3 are hydrogen, l=1, k=
1. An alkali-soluble siloxane polymer in which an OH group is bonded to the p-position of the benzene ring.
JP9803285A 1985-05-10 1985-05-10 Alkali-soluble siloxane polymer Granted JPS61256347A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9803285A JPS61256347A (en) 1985-05-10 1985-05-10 Alkali-soluble siloxane polymer
US06/859,370 US4745169A (en) 1985-05-10 1986-05-05 Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer
EP86106238A EP0204963B1 (en) 1985-05-10 1986-05-07 Use of Alkali-Soluble Polyorganosilsesquioxane Polymers in a resist for preparing electronics parts.
DE8686106238T DE3687479T2 (en) 1985-05-10 1986-05-07 USE OF SILSESQUIOXANE POLYMERS SOLUBLE IN ALKALINE MILIEU IN A RESIST FOR THE PRODUCTION OF ELECTRONIC PARTS.
US07/893,946 US5264319A (en) 1985-05-10 1992-06-04 Photosensitive resin composition having high resistance to oxygen plasma, containing alkali-soluble organosilicon polymer and photosensitive dissolution inhibitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9803285A JPS61256347A (en) 1985-05-10 1985-05-10 Alkali-soluble siloxane polymer

Publications (2)

Publication Number Publication Date
JPS61256347A JPS61256347A (en) 1986-11-13
JPH0521228B2 true JPH0521228B2 (en) 1993-03-23

Family

ID=14208669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9803285A Granted JPS61256347A (en) 1985-05-10 1985-05-10 Alkali-soluble siloxane polymer

Country Status (1)

Country Link
JP (1) JPS61256347A (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2619358B2 (en) * 1986-01-08 1997-06-11 株式会社日立製作所 Photosensitive resin composition
JPH0769608B2 (en) * 1986-10-06 1995-07-31 株式会社日立製作所 Photosensitive resin composition
JPS63239440A (en) * 1986-11-25 1988-10-05 Nippon Telegr & Teleph Corp <Ntt> Energy ray sensitive resin composition
JPH0769610B2 (en) * 1987-03-19 1995-07-31 株式会社日立製作所 Pattern formation method
JPS63269150A (en) * 1987-04-28 1988-11-07 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JP2630986B2 (en) * 1988-05-18 1997-07-16 東レ・ダウコーニング・シリコーン株式会社 Alkali-soluble organopolysiloxane
DE69029104T2 (en) 1989-07-12 1997-03-20 Fuji Photo Film Co Ltd Polysiloxanes and positive working resist
KR100707767B1 (en) * 1999-09-28 2007-04-17 후지필름 가부시키가이샤 Positive photoresist composition
JP2002308990A (en) * 2001-04-10 2002-10-23 Jsr Corp Polysiloxane, method for producing the same, and radiation-sensitive resin composition
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
EP1937694A2 (en) * 2005-10-18 2008-07-02 DCE Aprilis, Inc. Photopolymerizable medium comprising siloxane compounds that support cationic polymerization for holographic storage
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP7311104B2 (en) * 2018-04-17 2023-07-19 ジェレスト, インコーポレイテッド Alkyl ether-substituted cyclotrisiloxane and method for producing the same

Also Published As

Publication number Publication date
JPS61256347A (en) 1986-11-13

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