JPH05210019A - Formation of waveguide - Google Patents

Formation of waveguide

Info

Publication number
JPH05210019A
JPH05210019A JP1509492A JP1509492A JPH05210019A JP H05210019 A JPH05210019 A JP H05210019A JP 1509492 A JP1509492 A JP 1509492A JP 1509492 A JP1509492 A JP 1509492A JP H05210019 A JPH05210019 A JP H05210019A
Authority
JP
Japan
Prior art keywords
waveguide
waveguide pattern
clad layer
pattern
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1509492A
Other languages
Japanese (ja)
Inventor
Tetsuya Hattori
哲也 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP1509492A priority Critical patent/JPH05210019A/en
Publication of JPH05210019A publication Critical patent/JPH05210019A/en
Pending legal-status Critical Current

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  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To make a waveguide pattern smooth by reducing thermal damage. CONSTITUTION:A lower clad layer 125 and a core layer are laminated on a silicon substrate 110 and dry etching is carried out according to a specific pattern so that the laminated part is left, thereby forming the waveguide pattern 180. Light 170 from a carbon dioxide laser is converged to locally fuse a roughened part 210. Further, other roughened parts 210 are locally fused by the scanning of the light 170 through a lens 160. The roughened parts which are fused are solidified roundly to become smooth. An upper clad layer 120 is deposited and sintered to embed the waveguide pattern 180.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、通信情報処理分野にお
ける光部品の一つである導波路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a waveguide which is one of optical components in the field of communication information processing.

【0002】[0002]

【従来の技術】導波路作成方法としては、「光学 第1
8巻第12号(1989.12)p.681」に記載されているような
方法が一般的である。この方法を簡単に説明するとつぎ
のようになっている。基板上に、下部クラッド層及びコ
ア導波路層を積層する。つぎに、所定のパターンを残す
ようにコア導波路層をエッチングして導波路パターンを
加工する。そして、上部クラッド層を積層して導波路を
作成する。
2. Description of the Related Art As a method for producing a waveguide, there is "Optical No. 1".
Volume 8 No. 12 (1989.12) p.681 ”is generally used. A brief description of this method is as follows. A lower clad layer and a core waveguide layer are laminated on the substrate. Next, the core waveguide layer is etched so as to leave a predetermined pattern to process the waveguide pattern. Then, the upper clad layer is laminated to form a waveguide.

【0003】[0003]

【発明が解決しようとする課題】前述の導波路作成方法
では、導波路パターンの加工をエッチングで行ってい
る。このとき、空気中の微粒子,散乱・回折など光学的
現象や表面の凹凸などの化学的現象などにより、導波路
パターンにクラックなどの荒れた部分が生じる。導波路
中を進行する光はこの荒れた部分によって散乱され、損
失を生じることになる。これの対策として、導波路パタ
ーンの加工後、基板全体を加熱し導波路パターンの荒れ
た部分を円形化する方法が知られている。しかし、この
方法では、加熱時の熱的なダメージにより、導波路パタ
ーン内部の不純物濃度が全体にわたって変化したり、基
板、クラッド層が歪んでしまうという問題がある。ま
た、光IC内部にこの導波路を形成する場合、ともに集
積された他の素子にも熱的なダメージを与えてしまう。
このように、導波路は光ICの基本技術として重要なも
のであるが、上述のような問題を有していた。
In the above-described method for producing a waveguide, the waveguide pattern is processed by etching. At this time, rough portions such as cracks are generated in the waveguide pattern due to fine particles in the air, optical phenomena such as scattering and diffraction, and chemical phenomena such as surface irregularities. Light traveling in the waveguide is scattered by this rough portion, resulting in loss. As a countermeasure against this, there is known a method in which after the waveguide pattern is processed, the entire substrate is heated to make the rough portion of the waveguide pattern circular. However, this method has a problem in that the impurity concentration inside the waveguide pattern is entirely changed and the substrate and the clad layer are distorted due to thermal damage during heating. In addition, when this waveguide is formed inside the optical IC, other integrated elements are also thermally damaged.
As described above, the waveguide is important as a basic technique of the optical IC, but has the above-mentioned problems.

【0004】本発明は、前述の問題点に鑑み、熱的なダ
メージを低減して導波路パターンを滑らかにし、損失の
少ない導波路を提供することをその目的とする。
In view of the above-mentioned problems, it is an object of the present invention to provide a waveguide which reduces thermal damage, smoothes the waveguide pattern, and has a small loss.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、本発明の導波路の作成方法は、基板上に下部クラッ
ド層とコア導波路層を積層したのち所定の導波路パター
ンを設け、光源からの光を導波路パターンの導波路パタ
ーンの荒れた部分を溶融したのちに、基板上にさらに前
記導波路パターンよりも屈折率の小さいクラッド層を形
成することを特徴とする。
In order to solve the above-mentioned problems, the method for producing a waveguide of the present invention is to provide a predetermined waveguide pattern after laminating a lower clad layer and a core waveguide layer on a substrate, After the light from the light source is melted in the rough portion of the waveguide pattern of the waveguide pattern, a clad layer having a smaller refractive index than the waveguide pattern is further formed on the substrate.

【0006】[0006]

【作用】本発明の導波路の作成方法では、集光された光
源からの光を導波路パターンの荒れた部分に集光させて
この荒れた部分だけが溶融する。この荒れた部分は丸く
固化し滑らかなものになる。そして、基板上にさらに導
波路パターンよりも屈折率の小さいクラッド層を形成す
ると、滑らかな導波路パターンをコアとする導波路が形
成される。
In the method of forming a waveguide of the present invention, the condensed light from the light source is condensed on the rough portion of the waveguide pattern, and only the rough portion is melted. This rough part becomes round and solidified. When a clad layer having a smaller refractive index than the waveguide pattern is further formed on the substrate, a waveguide having a smooth waveguide pattern as a core is formed.

【0007】[0007]

【実施例】図1は、本発明の一実施例の工程の概略を示
したものである。この図を参照してその工程を説明す
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an outline of the steps of one embodiment of the present invention. The process will be described with reference to this figure.

【0008】まず、シリコン基板(Si基板)110を
所定の時間、熱酸化して、SiO2とし下部クラッド層
125を形成したのち、(図1(a))火炎堆積法(F
HD)で所定の不純物濃度分布を持ち屈折率を高めたS
iO2 のコア層150を10μm程度形成する(図1
(b))。つぎに、所定のパターンにしたがってその部
分を残すようにドライエッチングして、導波路パターン
180を形成する(図1(c))。そして、導波路パタ
ーン180の端部から光を入射する。このとき、導波路
パターン180にギザギザ,凹凸,クラックなどのがあ
ると、そこで光が散乱し、基板上から観測される。炭酸
ガスレーザからの光170をレンズ160にて荒れた部
分210に集光し、荒れた部分210を部分的に溶融す
る(図2(d))。融解した荒れた部分210は丸く固
化し、滑らかなものになる。
First, a silicon substrate (Si substrate) 110 is thermally oxidized for a predetermined time to form SiO 2 to form a lower clad layer 125, and then a flame deposition method (F) is used (FIG. 1A).
S) with a predetermined impurity concentration distribution in HD) and a high refractive index
A core layer 150 of iO 2 is formed to a thickness of about 10 μm (see FIG. 1).
(B)). Next, a waveguide pattern 180 is formed by dry etching according to a predetermined pattern so as to leave that portion (FIG. 1C). Then, light is incident from the end of the waveguide pattern 180. At this time, if the waveguide pattern 180 has jaggedness, unevenness, cracks, etc., the light is scattered there and is observed from the substrate. The light 170 from the carbon dioxide laser is focused on the rough portion 210 by the lens 160, and the rough portion 210 is partially melted (FIG. 2D). The melted rough portion 210 is rounded and solidified, and becomes smooth.

【0009】つぎに、光170及びレンズ160を走査
して、基板上から観測されるほかの荒れた部分に移動さ
せ、その部分を溶融する。荒れた部分には、いったん溶
融して固まってできた部分が形成され、滑らかな導波路
パターン180が形成される(図2(e))。その後、
FHDまたはCVDによりフッ素をドープして低屈折率
としたSiO2 の上部クラッド層120を堆積し焼結
し、導波路パターン180を埋め込む(図2(f))。
そして、端部を研磨し露出させる。
Next, the light 170 and the lens 160 are scanned and moved to another rough portion observed from the substrate, and that portion is melted. In the rough portion, a portion formed by melting and solidifying once is formed, and a smooth waveguide pattern 180 is formed (FIG. 2E). afterwards,
An upper clad layer 120 of SiO 2 having a low refractive index doped with fluorine by FHD or CVD is deposited and sintered to fill the waveguide pattern 180 (FIG. 2 (f)).
Then, the ends are polished and exposed.

【0010】このようにして作成された導波路は、滑ら
かなコアを有しており、導波路中を進行する光の散乱が
押さえられ、損失の小さなものになっている。また、導
波路パターンの形成後、導波路パターンの荒れた部分に
絞り込んだガスレーザの光を照射し溶融することにより
部分的に溶融し滑らかにする。これによって、基板全体
を加熱することがなく、熱的なダメージがほとんどな
い。そのため、不純物濃度分布の変化が抑えられ、当初
の状態が保持された良好なものになっている。また、基
板或いはクラッド層の歪みも押さえられている。特に、
光ICに用いた場合、そのICに搭載されている光部品
(光電集積回路では電子部品など)のいろいろな素子に
熱的なダメージを与えることがほとんどなく、良好な光
ICを製作することが可能になる。
The waveguide thus formed has a smooth core, and scattering of light traveling in the waveguide is suppressed, resulting in a small loss. Further, after the formation of the waveguide pattern, the roughened portion of the waveguide pattern is irradiated with the light of the gas laser focused and melted, thereby partially melting and smoothing. As a result, the entire substrate is not heated and there is almost no thermal damage. Therefore, the change in the impurity concentration distribution is suppressed, and the initial state is kept good. Further, distortion of the substrate or the clad layer is suppressed. In particular,
When used in an optical IC, it is possible to manufacture a good optical IC with almost no thermal damage to various elements of optical parts (electronic parts in a photoelectric integrated circuit) mounted on the IC. It will be possible.

【0011】本発明は前述の実施例に限らず様々な変形
が可能である。
The present invention is not limited to the above-described embodiment, but can be variously modified.

【0012】例えば、光源には、吸収波長帯がマッチし
ているため、炭酸ガスレーザを用いたが、導波路パター
ンを溶融し得るものならば他の光源を用いてもよい。ま
た、下部クラッド層を熱酸化SiO2コアを所定の不純
物濃度分布をもつSiO2 、上部クラッドをフッ素をド
ープのSiO2 としたが、同様の屈折率差があれば他の
組み合わせでもよい。さらに、基板には、融点が高く熱
伝導率が良いのでシリコンを用いたがこれに限られな
い。
For example, a carbon dioxide gas laser is used as the light source because the absorption wavelength band is matched, but another light source may be used as long as it can melt the waveguide pattern. Further, SiO 2 having a predetermined impurity concentration distribution thermal oxidation SiO 2 core lower clad layer, but the upper cladding was SiO 2 in the fluorine-doped, or in other combinations if the same index difference. Furthermore, silicon is used for the substrate because it has a high melting point and good thermal conductivity, but the substrate is not limited to this.

【0013】[0013]

【発明の効果】以上の通り本発明の導波路の作成方法に
よれば、光源からの光を集光させて導波路パターンの荒
れた部分を局所的に溶融させて丸く形成するので、導波
路中を進行する光の散乱を押さえることができ、損失を
小さくすることができる。また、荒れた部分を局所的に
溶融させるので、より熱的なダメージを小さくすること
ができる。
As described above, according to the method for producing a waveguide of the present invention, the light from the light source is condensed and the rough portion of the waveguide pattern is locally melted to form a round shape. It is possible to suppress the scattering of light traveling in the inside and reduce the loss. Further, since the roughened portion is locally melted, thermal damage can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の工程の概略図。FIG. 1 is a schematic view of the process of the present invention.

【図2】本発明の工程の概略図。FIG. 2 is a schematic view of the process of the present invention.

【符号の説明】[Explanation of symbols]

110…Si基板,120…上部クラッド層,125…
下部クラッド層,180…導波路パターン,190…荒
れた部分。
110 ... Si substrate, 120 ... Upper clad layer, 125 ...
Lower cladding layer, 180 ... Waveguide pattern, 190 ... Rough portion.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基板上に下部クラッド層を形成後、前記
下部クラッド層よりも屈折率の大きいコア層を形成した
のち、所定の導波路パターンを設け、 光源からの光を前記導波路パターンの荒れた部分に集光
させて前記導波路パターンの荒れた部分を溶融したのち
に、 前記基板上にさらに前記導波路パターンよりも屈折率の
小さいクラッド層を形成することを特徴とする導波路の
作成方法。
1. A lower clad layer is formed on a substrate, and then, a core layer having a refractive index larger than that of the lower clad layer is formed, and then a predetermined waveguide pattern is provided to allow light from a light source to pass through the waveguide pattern. After condensing on the rough portion to melt the rough portion of the waveguide pattern, a clad layer having a refractive index smaller than that of the waveguide pattern is further formed on the substrate. How to make.
JP1509492A 1992-01-30 1992-01-30 Formation of waveguide Pending JPH05210019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1509492A JPH05210019A (en) 1992-01-30 1992-01-30 Formation of waveguide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1509492A JPH05210019A (en) 1992-01-30 1992-01-30 Formation of waveguide

Publications (1)

Publication Number Publication Date
JPH05210019A true JPH05210019A (en) 1993-08-20

Family

ID=11879257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1509492A Pending JPH05210019A (en) 1992-01-30 1992-01-30 Formation of waveguide

Country Status (1)

Country Link
JP (1) JPH05210019A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459770B1 (en) * 2002-01-29 2004-12-04 전자부품연구원 Method for consolidating silica fine particles deposited on a wafer
US7967663B2 (en) 2007-08-24 2011-06-28 Panasonic Electric Works Co., Ltd. Process of forming a deflection mirror in a light waveguide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459770B1 (en) * 2002-01-29 2004-12-04 전자부품연구원 Method for consolidating silica fine particles deposited on a wafer
US7967663B2 (en) 2007-08-24 2011-06-28 Panasonic Electric Works Co., Ltd. Process of forming a deflection mirror in a light waveguide

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