JPH0520880A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPH0520880A
JPH0520880A JP3172983A JP17298391A JPH0520880A JP H0520880 A JPH0520880 A JP H0520880A JP 3172983 A JP3172983 A JP 3172983A JP 17298391 A JP17298391 A JP 17298391A JP H0520880 A JPH0520880 A JP H0520880A
Authority
JP
Japan
Prior art keywords
data
address
semiconductor memory
unit
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3172983A
Other languages
Japanese (ja)
Inventor
Haruyuki Yokoyama
晴之 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Software Shikoku Ltd
Original Assignee
NEC Software Shikoku Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Software Shikoku Ltd filed Critical NEC Software Shikoku Ltd
Priority to JP3172983A priority Critical patent/JPH0520880A/en
Publication of JPH0520880A publication Critical patent/JPH0520880A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To match data in two semiconductor memory parts in the shortest time upon recovery from one side operation by performing power supply control for individual memory package upon occurrence of memory error in double write constitution. CONSTITUTION:Data are written two times successively from a host device through data lines (a), (b) into semiconductor memory parts 10, 40 in a semiconductor memory 5 having double write constitution. If memory error occurs in a memory package 101 at the time of second writing, power supply for only the package 101. is interrupted through a control signal line (d) at an error address containing section 80. Consequently, the memory 5 is operated only on the side of semiconductor memory part 40. When data are written two times from the host device into the memory part 40 and the memory part 10 is recovered to double writing state, count sections 20, 50 are compared in order to match the data of the memory parts 10, 40. Address data corresponding to the writing number of the difference are then transferred from the memory part 40 to the memory part 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体記憶装置に関し、
特に二重書き構成となっている第1か第2のどちらかの
半導体記憶部にメモリエラーが発生した場合、正常な半
導体記憶部で片肺運行し、メモリエラーが発生した半導
体記憶部の保守を行ったのちの第1の半導体記憶部と第
2の半導体記憶部とのデータの一致方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor memory device,
In particular, when a memory error occurs in either the first or second semiconductor storage unit that has a double-write configuration, one lung operates in a normal semiconductor storage unit and maintenance of the semiconductor storage unit in which the memory error occurs And a method of matching data in the first semiconductor memory unit and the second semiconductor memory unit after performing the above.

【0002】[0002]

【従来の技術】従来、この種の半導体記憶装置では、二
重書き構成を行うとき、第1か第2のどちらかの半導体
記憶部にメモリエラーが発生した場合正常な半導体記憶
部で片肺運行し、メモリエラーが発生した半導体記憶部
の保守を行ったのちは、第1の半導体記憶部と第2の半
導体記憶部とのデータの一致は全部のデータをコピーす
る事によって行っていた。
2. Description of the Related Art Conventionally, in this type of semiconductor memory device, when a memory error occurs in one of the first and second semiconductor memory parts when a double write configuration is performed, a normal semiconductor memory part has a single lung. After the operation and maintenance of the semiconductor memory unit in which the memory error has occurred, the data in the first semiconductor memory unit and the data in the second semiconductor memory unit are matched by copying all the data.

【0003】[0003]

【発明が解決しようとする課題】上述した従来の二重書
き構成の半導体記憶装置のデータを一致させる為には、
個々のパッケージの電源制御ができなかった為、全部の
データをコピーすることにより行っていたが、この方法
ではデータのコピーに時間がかかるという欠点がある。
In order to match the data of the above-mentioned conventional semiconductor memory device of the dual writing structure,
Since it was not possible to control the power supply of each package, all the data was copied, but this method has the disadvantage that it takes time to copy the data.

【0004】[0004]

【課題を解決するための手段】本発明の半導体記憶装置
は、第1の半導体記憶部と、上位装置から前記第1の半
導体記憶部への書き込み動作時には前記第1の半導体記
憶部と同一のデータを書き込む第2の半導体記憶部と、
前記上位装置から前記第1の半導体記憶部へのデータ書
き込み回数をカウントし記憶する第1のカウント部と、
前記上位装置から前記第2の半導体記憶部へのデータ書
き込み回数をカウントし記憶する第2のカウント部と、
前記上位装置から前記第1の半導体記憶部へデータを書
き込む時の開始アドレスと終了アドレスとを記憶する第
1のデータアドレス部と、前記上位装置から前記第2の
半導体記憶部へデータを書き込む時の開始アドレスと終
了アドレスとを記憶する第2のデータアドレス部と、前
記第1の半導体記憶部と前記第2の半導体記憶部との間
のデータ転送のためのコピーインタフェースと、個々の
メモリパッケージの電源を制御するための電源制御部
と、メモリエラー発生のアドレスを感知し格納するエラ
ーアドレス格納部とを備えると共に、前記上位装置から
前記第1の半導体記憶部へデータが書き込まれた時の開
始アドレスと終了アドレスとを前記第1のデータアドレ
ス部へ記憶しデータの書き込み回数をカウントして前記
第1のカウント部へ記憶する手段と、上位装置から前記
第2の半導体記憶部へデータが書き込まれた時の開始ア
ドレスと終了アドレスとを前記第2のデータアドレス部
へ記憶しデータの書き込み回数をカウントして前記第2
のカウント部へ記憶する手段と、二重書き構成で前記第
1の半導体記憶部か前記第2の半導体記憶部のどちらか
がメモリエラーを起こしたとき前記エラーアドレス格納
部の情報によって前記電源制御部でメモリエラー発生パ
ッケージの電源だけを切断する手段と、二重書き構成で
の片肺運行をしたのち回復した時において前記エラーア
ドレス格納部の情報によってコピーインタフェースを介
して正常な同じアドレスのメモリパッケージからデータ
のコピーを行う手段と、前記第1のカウント部と前記第
2のカウント部とを比較しカウント値に違いがあればカ
ウント値の大きい半導体記憶部から前記コピーインタフ
ェースをとおしてカウントの差分だけ前記第1のデータ
アドレス部と前記第2のデータアドレス部から変化した
データのアドレスを知りデータのコピーを行う手段とを
備えて構成される。
According to another aspect of the present invention, there is provided a semiconductor memory device, which is the same as the first semiconductor memory part and the first semiconductor memory part during a write operation from a host device to the first semiconductor memory part. A second semiconductor memory unit for writing data,
A first counting unit that counts and stores the number of times data is written from the host device to the first semiconductor memory unit;
A second counting unit that counts and stores the number of times data is written from the host device to the second semiconductor storage unit;
A first data address section for storing a start address and an end address when writing data from the higher-level device to the first semiconductor storage section; and a data writing operation for writing data from the higher-level apparatus to the second semiconductor storage section A second data address section for storing a start address and an end address of the same, a copy interface for data transfer between the first semiconductor storage section and the second semiconductor storage section, and an individual memory package A power supply control unit for controlling the power supply of the memory, and an error address storage unit for sensing and storing an address where a memory error has occurred, and when data is written from the host device to the first semiconductor storage unit. A start address and an end address are stored in the first data address section, the number of times data is written is counted, and the first count section is stored. Memorizing means and a start address and an end address when data is written from the higher-level device to the second semiconductor memory unit are stored in the second data address unit, and the number of times data is written is counted to determine the first address. Two
Means for storing data in the counting unit and the power control by the information in the error address storage unit when a memory error occurs in either the first semiconductor storage unit or the second semiconductor storage unit in the double-write configuration. Memory error occurred in the memory unit Only the power supply of the package is cut off, and the memory of the same address is normal via the copy interface according to the information in the error address storage when the device recovers after the single lung operation in the double writing configuration. The means for copying the data from the package and the first counting unit and the second counting unit are compared, and if there is a difference in the count value, the semiconductor memory unit with a larger count value is used to count the data through the copy interface. Address of data changed from the first data address part and the second data address part by a difference Constructed and means for copying the data to know.

【0005】[0005]

【実施例】次に、本発明について図面を参照して説明す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

【0006】図1は本発明の一実施例の構成を示すブロ
ック図である。
FIG. 1 is a block diagram showing the configuration of an embodiment of the present invention.

【0007】図1において半導体記憶装置5は第1のカ
ウント部20と第1のデータアドレス部30とを含む第
1の半導体記憶部10と、第2のカウント部50と第2
のデータアドレス部60とを含む第2の半導体記憶部4
0と、エラーアドレス格納部80を含む電源制御部70
とによって構成されている。第1の半導体記憶部10は
データ線aを介して上位装置へ、制御信号線dを介して
電源制御部70へ、コピーインタフェースcを介して第
2の半導体記憶部40へそれぞれ接続されている。ま
た、第2の半導体記憶部40はデータ線bを介して上位
装置へ、制御信号線eを介して電源制御部70へそれぞ
れ接続されている。
In FIG. 1, a semiconductor memory device 5 includes a first semiconductor memory section 10 including a first counting section 20 and a first data address section 30, a second counting section 50 and a second counting section 50.
Second semiconductor memory unit 4 including a data address unit 60 of
0 and the power supply control unit 70 including the error address storage unit 80
It is composed of and. The first semiconductor memory unit 10 is connected to the host device via the data line a, to the power supply control unit 70 via the control signal line d, and to the second semiconductor memory unit 40 via the copy interface c. . The second semiconductor storage unit 40 is connected to the host device via the data line b and to the power supply control unit 70 via the control signal line e.

【0008】次に、本実施例の動作について説明する。
上位装置から二重書き構成の半導体記憶装置5へデータ
がデータ線a,bを介し半導体記憶部10,40へそれ
ぞれ続けて2回書き込まれたとする。偶々この2回目の
書き込み時に、メモリパッケージ101にメモリエラー
が発生した場合は制御信号線dを使いエラーアドレス格
納部80にメモリパッケージ101のアドレスを格納す
ると共に、電源制御部70によってメモリパッケージ1
01の電源だけを切断する。この状態で半導体記憶部5
は、第2の半導体記憶部40だけの運用である片肺運行
となる。この片肺運行状態で上位装置からデータがデー
タ線bを介して第2の半導体記憶部40へ2回書き込ま
れた後第1の半導体記憶部10が修復されて二重書き状
態に戻った時、電源制御部70がエラーアドレス格納部
80のデータから制御信号線eを使ってメモリパッケー
ジ401からメモリパッケージ101へコピーインタフ
ェースcを介しデータのコピーを行う。その後、第1の
半導体記憶部10と第2の半導体記憶部40とのデータ
を一致させるため第1のカウント部20と第2のカウン
ト部50とを比較する。そしてその差分の書き込み数の
データアドレスだけ第2のデータアドレス部60から知
り、コピーインタフェースcを介し第2の半導体記憶部
40から第1の半導体記憶部10へデータを転送する。
Next, the operation of this embodiment will be described.
It is assumed that data is written twice from the upper device to the semiconductor memory device 5 having the double-write configuration in the semiconductor memory portions 10 and 40 through the data lines a and b, respectively. If a memory error occurs in the memory package 101 by chance during the second write, the address of the memory package 101 is stored in the error address storage unit 80 using the control signal line d, and the power supply control unit 70 causes the memory package 1 to be stored.
Power off only 01. In this state, the semiconductor storage unit 5
Is the one-lung operation, which is the operation of only the second semiconductor storage unit 40. In this single lung operation state, when data is written twice from the upper device to the second semiconductor memory unit 40 via the data line b and then the first semiconductor memory unit 10 is restored and returns to the double writing state. The power supply control unit 70 copies data from the data of the error address storage unit 80 from the memory package 401 to the memory package 101 using the control signal line e via the copy interface c. After that, the first counting unit 20 and the second counting unit 50 are compared in order to match the data in the first semiconductor memory unit 10 and the data in the second semiconductor memory unit 40. Then, only the data addresses corresponding to the number of writes of the difference are known from the second data address section 60, and the data is transferred from the second semiconductor memory section 40 to the first semiconductor memory section 10 via the copy interface c.

【0009】[0009]

【発明の効果】以上説明したように本発明は、二重書き
構成でメモリエラー発生時に個々のメモリパッケージの
電源制御を行うことにより、片肺運行後正常運行にもど
った時、2つの半導体記憶部のデータの一致を最短時間
で行うことができるという効果がある。
As described above, according to the present invention, by controlling the power supply of each memory package when a memory error occurs in the dual writing configuration, when the normal operation is restored after one lung operation, two semiconductor memories are stored. There is an effect that the data of the parts can be matched in the shortest time.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の構成を示すブロック図。FIG. 1 is a block diagram showing the configuration of an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

5 半導体記憶装置 10 第1の半導体記憶部 20 第1のカウント部 30 第1のデータアドレス部 40 第2の半導体記憶部 50 第2のカウント部 60 第2のデータアドレス部 70 電源制御部 80 エラーアドレス格納部 101〜107,401〜407 メモリパッケージ a データ線 b データ線 c コピーインタフェース d 制御信号線 e 制御信号線 5 semiconductor memory device 10 first semiconductor memory unit 20 first counting unit 30 first data address unit 40 second semiconductor memory unit 50 second counting unit 60 second data address unit 70 power control unit 80 error Address storage unit 101 to 107, 401 to 407 Memory package a Data line b Data line c Copy interface d Control signal line e Control signal line

Claims (1)

【特許請求の範囲】 【請求項1】 第1の半導体記憶部と、上位装置から前
記第1の半導体記憶部への書き込み動作時には前記第1
の半導体記憶部と同一のデータを書き込む第2の半導体
記憶部と、前記上位装置から前記第1の半導体記憶部へ
のデータ書き込み回数をカウントし記憶する第1のカウ
ント部と、前記上位装置から前記第2の半導体記憶部へ
のデータ書き込み回数をカウントし記憶する第2のカウ
ント部と、前記上位装置から前記第1の半導体記憶部へ
データを書き込む時の開始アドレスと終了アドレスとを
記憶する第1のデータアドレス部と、前記上位装置から
前記第2の半導体記憶部へデータを書き込む時の開始ア
ドレスと終了アドレスとを記憶する第2のデータアドレ
ス部と、前記第1の半導体記憶部と前記第2の半導体記
憶部との間のデータ転送のためのコピーインタフェース
と、個々のメモリパッケージの電源を制御するための電
源制御部と、メモリエラー発生のアドレスを感知し格納
するエラーアドレス格納部とを備えると共に、 前記上位装置から前記第1の半導体記憶部へデータが書
き込まれた時の開始アドレスと終了アドレスとを前記第
1のデータアドレス部へ記憶しデータの書き込み回数を
カウントして前記第1のカウント部へ記憶する手段と、
上位装置から前記第2の半導体記憶部へデータが書き込
まれた時の開始アドレスと終了アドレスとを前記第2の
データアドレス部へ記憶しデータの書き込み回数をカウ
ントして前記第2のカウント部へ記憶する手段と、二重
書き構成で前記第1の半導体記憶部か前記第2の半導体
記憶部のどちらかがメモリエラーを起こしたとき前記エ
ラーアドレス格納部の情報によって前記電源制御部でメ
モリエラー発生パッケージの電源だけを切断する手段
と、二重書き構成での片肺運行をしたのち回復した時に
おいて前記エラーアドレス格納部の情報によってコピー
インタフェースを介して正常な同じアドレスのメモリパ
ッケージからデータのコピーを行う手段と、前記第1の
カウント部と前記第2のカウント部とを比較しカウント
値に違いがあればカウント値の大きい半導体記憶部から
前記コピーインタフェースをとおしてカウントの差分だ
け前記第1のデータアドレス部と前記第2のデータアド
レス部から変化したデータのアドレスを知りデータのコ
ピーを行う手段とを備えて成ることを特徴とする半導体
記憶装置。
Claim: What is claimed is: 1. A first semiconductor memory unit and the first semiconductor memory unit during a write operation from a host device to the first semiconductor memory unit.
A second semiconductor memory unit for writing the same data as that of the semiconductor memory unit, a first counting unit for counting and storing the number of times of data writing from the higher-level device to the first semiconductor memory unit, and the higher-level device A second counting unit that counts and stores the number of times data is written to the second semiconductor memory unit, and stores a start address and an end address when writing data from the host device to the first semiconductor memory unit. A first data address section, a second data address section that stores a start address and an end address when writing data from the host device to the second semiconductor storage section, and the first semiconductor storage section A copy interface for data transfer with the second semiconductor memory unit, a power supply control unit for controlling the power supply of each memory package, and a memo. An error address storage unit for detecting and storing an address of an error occurrence, and a start address and an end address when data is written from the host device to the first semiconductor storage unit are stored in the first data address. Means for storing the data in the first counting unit and counting the number of times data is written,
A start address and an end address when data is written from the host device to the second semiconductor memory unit are stored in the second data address unit, the number of times data is written is counted, and the result is sent to the second counting unit. When a memory error occurs in either the first semiconductor storage unit or the second semiconductor storage unit in the dual writing configuration, a memory error occurs in the power supply control unit according to the information in the error address storage unit. A means for cutting off only the power supply of the generation package and the data from the memory package of the same normal address via the copy interface according to the information of the error address storage section when the one-lung operation in the dual writing configuration is recovered. The copy means and the first counting section and the second counting section are compared with each other, and if there is a difference in the count value, the count value is checked. And a means for copying the data by knowing the changed data address from the first data address part and the second data address part by the difference of the count from the semiconductor memory part having a large input value through the copy interface. A semiconductor memory device comprising:
JP3172983A 1991-07-15 1991-07-15 Semiconductor memory Pending JPH0520880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3172983A JPH0520880A (en) 1991-07-15 1991-07-15 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3172983A JPH0520880A (en) 1991-07-15 1991-07-15 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPH0520880A true JPH0520880A (en) 1993-01-29

Family

ID=15951997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3172983A Pending JPH0520880A (en) 1991-07-15 1991-07-15 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPH0520880A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000033190A1 (en) * 1998-11-25 2000-06-08 Schlumberger Resource Management Services, Inc. Improved memory integrity for meters

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000033190A1 (en) * 1998-11-25 2000-06-08 Schlumberger Resource Management Services, Inc. Improved memory integrity for meters
US6219656B1 (en) * 1998-11-25 2001-04-17 Schlumberger Resource Management Services, Inc. Memory integrity for meters

Similar Documents

Publication Publication Date Title
US5159671A (en) Data transfer unit for small computer system with simultaneous transfer to two memories and error detection and rewrite to substitute address
CN101118519A (en) Method and apparatus for protecting caching content and caching controller thereof
JPH0520880A (en) Semiconductor memory
JP2001014112A (en) Disk subsystem and remote copying method
JP3275492B2 (en) Linked disk unit
JPH0440542A (en) Memory control system
JPH0588988A (en) Disk array device and method for restoring data
JPH04239355A (en) Electronic disk device
JPS6374170A (en) Control system for magnetic disk
JPH0326561A (en) Printing device
JPS6160506B2 (en)
JPS63123140A (en) History information storage device
JPH05257823A (en) Information processor
JPS6292039A (en) Data processor
JPS61815A (en) Faulty area detecting device of sequence circuit
JPH0199138A (en) Information history storage
JPS6227422B2 (en)
JPH0341538A (en) Main storage device
JPH08147531A (en) Cash processor
JPH05134814A (en) Duplex external storage device
JPS6073757A (en) History acquisition method for operational processing unit
JPH0217549A (en) Data processor
JPS5833574B2 (en) New Year's Day Warranty
JPS6118378B2 (en)
JPH08305594A (en) Control memory redundancy system for duplex device