JPH05208288A - Laser beam machining method and device therefor - Google Patents

Laser beam machining method and device therefor

Info

Publication number
JPH05208288A
JPH05208288A JP4005446A JP544692A JPH05208288A JP H05208288 A JPH05208288 A JP H05208288A JP 4005446 A JP4005446 A JP 4005446A JP 544692 A JP544692 A JP 544692A JP H05208288 A JPH05208288 A JP H05208288A
Authority
JP
Japan
Prior art keywords
hole
laser beam
processing
laser
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4005446A
Other languages
Japanese (ja)
Inventor
Hideaki Tanaka
秀明 田中
Takao Terabayashi
隆夫 寺林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4005446A priority Critical patent/JPH05208288A/en
Publication of JPH05208288A publication Critical patent/JPH05208288A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable machining of a high-aspect-ratio hole and groove by elevating a machining face corresponding to an increment of the depth of a machined hole at the time of laser beam machining. CONSTITUTION:Considering the depth of the hole determined by the energy density of a laser beam 2, the diameter of the hole and the focal distance of a condensing lens 5, the face of a material to be machined 6 is controlled to be elevated using a Z axis stage 7, a motor 9, a drive 10 and a pulse generator 11 at every specified number of shot. Thus the required machining for the high-aspect-ratio hole and groove is carried out.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はレーザービームによる加
工方法に係り、特に高アスペクト比の穴または溝を、精
度良く加工する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser beam processing method, and more particularly, to a method for accurately processing a hole or groove having a high aspect ratio.

【0002】[0002]

【従来の技術】従来、深穴加工方法は、主として、ドリ
ルによる機械的な穴加工法で行われていた。しかし、こ
の方法では、例えば、φ100μmより小さい直径の穴
を加工するのは困難である。また、最近、電子機器の高
性能化に伴い、配線の高密度化が要求されている。この
ため、大量穴あけの必要な代表例である回路基板などに
おいても、微細穴を小ピッチで加工するニーズが増えて
いる。この要求を満たす加工方法の1つとして、部分的
に開口部を持つマスクを介してレーザ光を被加工材に照
射し試料を部分的に加工する方法がある。例えば、特開
昭60−13449号において開示されているように、
ポリイミド、ポリエステル、ガラスエポキシ等の有機基
板表面に金属層を接着した配線基板のスルーホール穴加
工にあたり、まず、表面の金属層を加工を施すべきパタ
ーンに選択的にエッチングし、その後、この金属層をマ
スクとして基板に紫外レーザ光を照射し、スルーホール
の加工を施す方法がある。また、特開昭61−4858
2号に開示されているようにエッチングとレーザ光照射
を併用した微細加工方法において被加工材の両面の同一
位置に同一のパターンでフォトレジスト膜を設定し、エ
ッチング加工を穴が貫通する前に中断し、形成されたブ
リッジの全数または所定数をレジスト膜除去後、フォト
レジストパターンと同一の軌跡に沿って走行するレーザ
ビームで除去する加工方法がある。
2. Description of the Related Art Conventionally, a deep hole drilling method has mainly been a mechanical hole drilling method using a drill. However, with this method, for example, it is difficult to form a hole having a diameter smaller than 100 μm. In addition, recently, as the performance of electronic devices has been improved, high density wiring has been required. For this reason, there is an increasing need for processing fine holes at a small pitch even in a circuit board or the like, which is a typical example requiring a large number of holes. As one of the processing methods satisfying this requirement, there is a method of irradiating a workpiece with a laser beam through a mask partially having an opening to partially process a sample. For example, as disclosed in JP-A-60-13449,
When processing through-holes in a wiring board in which a metal layer is attached to the surface of an organic substrate such as polyimide, polyester, or glass epoxy, first, the surface metal layer is selectively etched into a pattern to be processed, and then this metal layer There is a method of irradiating the substrate with an ultraviolet laser beam using the as a mask to process the through holes. Also, Japanese Patent Laid-Open No. 61-4858
In the microfabrication method that uses both etching and laser light irradiation as disclosed in No. 2, a photoresist film is set in the same position on both surfaces of the work material with the same pattern, and before the holes penetrate the etching work. There is a processing method of interrupting and removing all or a predetermined number of formed bridges with a laser beam that travels along the same trajectory as the photoresist pattern after removing the resist film.

【0003】[0003]

【発明が解決しようとする課題】上記従来技術は、以下
のような問題があった。紫外レーザ光を用いて、有機物
等に加工する場合、単にレーザ光を集束し被加工材に照
射する方法では、集光レンズの焦点距離及び開口穴寸法
にもよるが、例えば、20μm程度の穴の場合、せいぜ
い20μm程度の深さの穴しか加工することが出来ない
という問題がある。これは、主に、集束されたレーザ光
は、加工が進むにつれて焦点がずれるため、被加工材を
加工できる限界のエネルギ密度(しきい値)以下になっ
てしまい、穴深さが飽和するためと考えられる。
The above-mentioned prior art has the following problems. In the case of processing an organic substance or the like using an ultraviolet laser beam, a method of simply focusing the laser beam and irradiating the work piece, for example, a hole of about 20 μm, depending on the focal length of the condenser lens and the size of the opening hole. In this case, there is a problem that only a hole having a depth of about 20 μm can be processed. This is mainly because the focused laser beam is out of focus as the machining progresses, and the energy density (threshold value) becomes lower than the limit for machining the workpiece, and the hole depth is saturated. it is conceivable that.

【0004】本発明の目的は、紫外レーザ光により、高
アスペクト比の穴加工するための方法を提供することに
ある。
An object of the present invention is to provide a method for drilling a hole having a high aspect ratio with an ultraviolet laser beam.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明におけるレーザ加工方法では、試料ステージ
自身を被加工物にあける穴深さに応じた適切な速度で加
工中にZ方向に上昇させることにより、焦点ずれを防止
し高アスペクト比の穴及び溝加工を行なうものである。
In order to achieve the above object, in the laser processing method according to the present invention, in the Z direction during processing, the sample stage itself is processed at an appropriate speed according to the depth of the hole in the workpiece. By ascending, defocusing is prevented and holes and grooves with a high aspect ratio are processed.

【0006】[0006]

【作用】本発明において、Zステージは、試料面をビー
ム照射方向に動かすために用いる。また、Zステージ用
制御装置は、深さ方向の材料除去速度低下に応じてZス
テージを上昇させるよう制御する機能を持つ。
In the present invention, the Z stage is used to move the sample surface in the beam irradiation direction. Further, the Z-stage control device has a function of controlling the Z-stage to move up in response to a decrease in the material removal rate in the depth direction.

【0007】[0007]

【実施例】以下、本発明における実施例を、図1と図2
を用いて説明する。
EXAMPLES Examples of the present invention will be described below with reference to FIGS.
Will be explained.

【0008】図1は、本発明のレーザ加工方法による第
1実施例の装置の斜視図を示す。
FIG. 1 shows a perspective view of the apparatus of the first embodiment according to the laser processing method of the present invention.

【0009】図1において、1は紫外レーザ発振器、2
は紫外レーザ光、3は反射ミラー、4は転写マスク、5
は集光レンズ、6は被加工材、7はZ軸ステージ、8は
XYステージ、9はモータ、10はドライブ、11はパ
ルスジェネレータをそれぞれ表わしている。図1に示す
ように、紫外レーザ発振器1から出た紫外レーザ光2は
反射ミラー3により転写マスクまで到達する。反射ミラ
ー3は、紫外レーザ光に対し高い反射率を示す誘電体薄
膜を石英基板上に蒸着させたものを使用し、反射による
レーザ光の損失を抑制している。その後レーザ光2は、
転写マスク4上に照射され、集光レンズにより被加工材
上に縮小投影される。被加工材に加工できる穴深さl0
は、レーザ光のエネルギ密度及び穴径と集光レンズの焦
点距離により決まってしまうので、l0の深さを加工す
るために必要なショット数を考慮しながら、試料面をZ
軸ステージ8とモータ9、ドライブ10及びパルスジェ
ネレータ11を用いて一定のショット数ごとに上昇さ
せ、高アスペクト比の穴加工を行なう。
In FIG. 1, 1 is an ultraviolet laser oscillator, 2
Is an ultraviolet laser beam, 3 is a reflection mirror, 4 is a transfer mask, 5
Is a condenser lens, 6 is a workpiece, 7 is a Z-axis stage, 8 is an XY stage, 9 is a motor, 10 is a drive, and 11 is a pulse generator. As shown in FIG. 1, the ultraviolet laser light 2 emitted from the ultraviolet laser oscillator 1 reaches the transfer mask by the reflection mirror 3. As the reflection mirror 3, a dielectric thin film having a high reflectance for ultraviolet laser light is deposited on a quartz substrate, and the loss of the laser light due to reflection is suppressed. After that, the laser beam 2
It is irradiated onto the transfer mask 4 and is reduced and projected on the material to be processed by the condenser lens. Hole depth l 0 that can be machined in the workpiece
Is determined by the energy density and hole diameter of the laser beam and the focal length of the condensing lens. Therefore, the sample surface is Z-sized while considering the number of shots required to process the depth of l 0.
The shaft stage 8, the motor 9, the drive 10, and the pulse generator 11 are used to raise a fixed number of shots for drilling with a high aspect ratio.

【0010】図2は、本発明によるレーザ加工方法の第
1実施例の概略を示す。
FIG. 2 shows the outline of the first embodiment of the laser processing method according to the present invention.

【0011】図2(a)は、紫外レーザ光(波長208
nm)を用い、ポリイイミドフィルム(カプトン)に穴
径20μmの加工を行なった場合の、穴深さとショット
数の関係を示した図である。この図より、どのエネルギ
密度の場合でも、ショット数が50を超えると加工穴深
さは飽和してくる事が分かる。図2(b)は、Z軸ステ
ージの位置を50ショット毎に、20μm上昇させた場
合のZ軸ステージの制御法の1例を示す。例えば、図2
(a)より、エネルギ密度0.5J/cm2の場合、2
0μmの穴深さまではショット数50で穴深さが飽和す
ることなく加工できる。図2(c)に、図2(b)に示
したようにZ軸ステージの位置を50ショット毎に20
μm上昇させ加工した結果を示す。図2(c)に示すよ
うに、ショット数を制御することにより、穴深さが飽和
することなく、所望の深さの穴が得られる。
FIG. 2A shows an ultraviolet laser beam (wavelength 208).
is a graph showing the relationship between the hole depth and the number of shots when a polyimide film (Kapton) is processed to have a hole diameter of 20 μm. From this figure, it is understood that the processed hole depth becomes saturated when the number of shots exceeds 50 at any energy density. FIG. 2B shows an example of the control method of the Z-axis stage when the position of the Z-axis stage is raised by 20 μm every 50 shots. For example, in FIG.
From (a), when the energy density is 0.5 J / cm 2 , 2
With a hole depth of 0 μm, it is possible to process with 50 shots without saturating the hole depth. As shown in FIG. 2B, the position of the Z-axis stage is set to 20 every 50 shots, as shown in FIG.
The result of processing by increasing μm is shown. As shown in FIG. 2C, by controlling the number of shots, a hole having a desired depth can be obtained without saturating the hole depth.

【0012】[0012]

【発明の効果】本発明により、被加工材上にレーザ光を
用いて高アスペクト比の穴を加工することができるので
レーザ加工の適用範囲が大幅に拡大する。この方法を紫
外レーザによる加工に適用することにより微小スルーホ
ールの形成が可能になると共に加工穴の品質を向上する
ことができる。
According to the present invention, since a hole having a high aspect ratio can be formed on a material to be processed by using laser light, the applicable range of laser processing is greatly expanded. By applying this method to the processing by the ultraviolet laser, it becomes possible to form minute through holes and improve the quality of the processed holes.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明によるレーザ加工方法第1実施例の装置
の斜視図である。
FIG. 1 is a perspective view of an apparatus of a first embodiment of a laser processing method according to the present invention.

【図2】本発明によるレーザ加工方法第1実施例の概略
図である。
FIG. 2 is a schematic view of a first embodiment of a laser processing method according to the present invention.

【符号の説明】[Explanation of symbols]

1…レーザ発振器、 2…レーザ光、 3…反射ミラー、 4…転写マスク、 5…集光レンズ、 6…被加工材、 7…Z軸ステージ、 8…XYステージ、 9…モータ、 10…ドライバ、 11…パルスジェネレータ。 DESCRIPTION OF SYMBOLS 1 ... Laser oscillator, 2 ... Laser beam, 3 ... Reflection mirror, 4 ... Transfer mask, 5 ... Condensing lens, 6 ... Workpiece material, 7 ... Z-axis stage, 8 ... XY stage, 9 ... Motor, 10 ... Driver , 11 ... Pulse generator.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】レーザ光を試料面上の特定の場所に集光さ
せて材料の局部を除去するレーザ加工法において、加工
中に穴深さの増加に応じて試料面を上昇させ高アスペク
ト比の穴及び溝加工を行う事を特徴とするレーザ加工方
法。
1. A laser processing method in which a laser beam is focused on a specific place on a sample surface to remove a local portion of a material, and the sample surface is raised in accordance with an increase in a hole depth during processing to increase a high aspect ratio. Laser processing method characterized by performing hole and groove processing of the above.
【請求項2】加工のための光源として紫外レーザ光を用
いること特徴とするレーザ加工方法。
2. A laser processing method, wherein ultraviolet laser light is used as a light source for processing.
【請求項3】レーザ光のエネルギ密度及び穴径と集光レ
ンズの焦点距離により決まってしまう加工可能な穴深さ
を考慮しながら、試料面を一定のショット数ごとに上昇
させて制御することにより、所望の高アスペクト比の穴
加工を行なう事を特徴とする請求項1記載のレーザ加工
方法。
3. The sample surface is controlled by raising it every fixed number of shots, taking into consideration the hole density that can be processed, which is determined by the energy density and hole diameter of the laser beam and the focal length of the condenser lens. 2. The laser processing method according to claim 1, wherein a hole having a desired high aspect ratio is processed by the method described above.
【請求項4】請求項1において、加工中に試料台の高さ
を材料の深さ方向の除去速度に合わせて変えることが出
来るステージを具備し、高アスペクト比の穴及び溝加工
を行なえることを特徴とするレーザ加工装置。
4. The method according to claim 1, further comprising a stage capable of changing the height of the sample table according to the removal rate in the depth direction of the material during processing, and capable of processing holes and grooves having a high aspect ratio. A laser processing device characterized by the above.
JP4005446A 1992-01-16 1992-01-16 Laser beam machining method and device therefor Pending JPH05208288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4005446A JPH05208288A (en) 1992-01-16 1992-01-16 Laser beam machining method and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4005446A JPH05208288A (en) 1992-01-16 1992-01-16 Laser beam machining method and device therefor

Publications (1)

Publication Number Publication Date
JPH05208288A true JPH05208288A (en) 1993-08-20

Family

ID=11611438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4005446A Pending JPH05208288A (en) 1992-01-16 1992-01-16 Laser beam machining method and device therefor

Country Status (1)

Country Link
JP (1) JPH05208288A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10508798A (en) * 1994-07-18 1998-09-02 エレクトロ サイエンティフィック インダストリーズ インコーポレイテッド Ultraviolet laser device and method for forming holes in multilayer target
US6407363B2 (en) 2000-03-30 2002-06-18 Electro Scientific Industries, Inc. Laser system and method for single press micromachining of multilayer workpieces
JP2003311459A (en) * 2002-04-19 2003-11-05 Nippon Steel Corp Laser beam surface machining device
EP1525069A4 (en) * 2002-07-25 2006-05-24 Matsushita Electric Ind Co Ltd System and method of laser drilling using a continuously optimized depth of focus
CN100446908C (en) * 2006-10-12 2008-12-31 南京瑞驰电子技术工程实业有限公司 Laser punch for experimental tablets

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10508798A (en) * 1994-07-18 1998-09-02 エレクトロ サイエンティフィック インダストリーズ インコーポレイテッド Ultraviolet laser device and method for forming holes in multilayer target
US6407363B2 (en) 2000-03-30 2002-06-18 Electro Scientific Industries, Inc. Laser system and method for single press micromachining of multilayer workpieces
JP2003311459A (en) * 2002-04-19 2003-11-05 Nippon Steel Corp Laser beam surface machining device
EP1525069A4 (en) * 2002-07-25 2006-05-24 Matsushita Electric Ind Co Ltd System and method of laser drilling using a continuously optimized depth of focus
CN100446908C (en) * 2006-10-12 2008-12-31 南京瑞驰电子技术工程实业有限公司 Laser punch for experimental tablets

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