JPH0519692B2 - - Google Patents

Info

Publication number
JPH0519692B2
JPH0519692B2 JP59099559A JP9955984A JPH0519692B2 JP H0519692 B2 JPH0519692 B2 JP H0519692B2 JP 59099559 A JP59099559 A JP 59099559A JP 9955984 A JP9955984 A JP 9955984A JP H0519692 B2 JPH0519692 B2 JP H0519692B2
Authority
JP
Japan
Prior art keywords
exposure
light source
mask
optical system
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59099559A
Other languages
Japanese (ja)
Other versions
JPS60242421A (en
Inventor
Takamasa Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59099559A priority Critical patent/JPS60242421A/en
Publication of JPS60242421A publication Critical patent/JPS60242421A/en
Publication of JPH0519692B2 publication Critical patent/JPH0519692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709Vibration, e.g. vibration detection, compensation, suppression or isolation

Description

【発明の詳細な説明】 本発明は露光装置に関し、特にIC,LSI等の集
積回路の微細パターンをシリコンウエハー面に投
影露光する為の露光装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an exposure apparatus, and more particularly to an exposure apparatus for projecting and exposing a fine pattern of an integrated circuit such as an IC or LSI onto a silicon wafer surface.

一般にIC,LSI等を製造する為の露光装置にお
いてはIC,LSI等の集積回路を描いたマスクパタ
ーンを照明用光学系により照明し、マスクパター
ンをシリコンウエハー面上に、露光機構部内の投
影光学系により投影し露光している。照明用光源
としては超高圧水銀灯、ハロゲンランプ等が多く
用いられている。照明用光源は高いスループツト
を得る為にウエハー面上で充分な照明が得られる
こと及び投影光学系の光学性能が充分発揮できる
ような波長幅の狭いスペクトルを放射すること等
が要求される。
In general, in exposure equipment for manufacturing ICs, LSIs, etc., a mask pattern depicting an integrated circuit such as an IC, LSI, etc. is illuminated by an illumination optical system, and the mask pattern is projected onto the silicon wafer surface using a projection optical system inside the exposure mechanism. The image is projected and exposed using a system. Ultra-high pressure mercury lamps, halogen lamps, etc. are often used as light sources for illumination. In order to obtain high throughput, the illumination light source is required to be able to provide sufficient illumination on the wafer surface and to emit a spectrum with a narrow wavelength width so that the optical performance of the projection optical system can be sufficiently exhibited.

一方露光機構部内の投影光学系は通常狭い波長
域に対してのみ収差補正がなされているので照明
用光学系の一部に干渉フイルターを用いて光源か
らの光束のスペクトル幅をなるべく狭くしてい
る。
On the other hand, since the projection optical system in the exposure mechanism normally has aberrations corrected only for a narrow wavelength range, an interference filter is used as part of the illumination optical system to narrow the spectral width of the light beam from the light source as much as possible. .

従つて照明用の光束強度が低下する傾向があ
る。
Therefore, the intensity of the luminous flux for illumination tends to decrease.

この為に従来から露光装置には高出力の光源が
要求されている。
For this reason, exposure apparatuses have traditionally been required to have high-output light sources.

一般に高出力でしかもスペクトル幅の狭い光束
を発振する光源は装置全体が必然的に大型化して
くる。
In general, a light source that emits a high-output light beam with a narrow spectral width inevitably requires a large-sized device as a whole.

例えばエキシマレーザーは高出力で例えば発振
波長が248.5nm,249.5nm等と短くしかもインジ
エクシヨンロツキングにより極めて狭いスペクト
ル幅の光束を放射することができる。又内部に封
入するガスを変えることにより発振波長を変える
ことも出来る。しかしながらこのエキシマレーザ
ーは極めて大型でしかも高重量である。例えば大
きさが150×100×50cmで重さは150Kg程ある。こ
の為エキシマレーザーを露光装置内に配置し全体
的に一体化して構成することは極めて難しい。
For example, excimer lasers have high output and short oscillation wavelengths, such as 248.5 nm or 249.5 nm, and can emit light with an extremely narrow spectral width due to injection locking. Furthermore, the oscillation wavelength can be changed by changing the gas sealed inside. However, this excimer laser is extremely large and heavy. For example, the size is 150 x 100 x 50 cm and the weight is about 150 kg. For this reason, it is extremely difficult to arrange the excimer laser within the exposure apparatus and to integrate it as a whole.

又一般に照明用光源には寿命があり長期間の使
用後には新しい光源と交換しなければならない。
Generally, light sources for illumination have a limited lifespan and must be replaced with a new light source after long-term use.

しかしながら露光装置は大型でかつ内部の構成
は極めて複雑でしかも高精度に組立てられてい
る。従つて露光装置内で光源を交換し他の部材と
精度良く合致するように調整することは時間もか
かり大変面倒である。
However, exposure apparatuses are large in size, have extremely complex internal configurations, and are assembled with high precision. Therefore, it is time consuming and very troublesome to replace the light source within the exposure apparatus and adjust it so that it matches other members with high precision.

以上のように露光装置に用いる照明用光源が大
型でしかも高重量の場合や頻繁に照明用光源を交
換する場合には照明用光源と露光機構部とを別個
独立に構成するのが好ましい。
As described above, when the illumination light source used in the exposure apparatus is large and heavy, or when the illumination light source is frequently replaced, it is preferable to configure the illumination light source and the exposure mechanism separately and independently.

しかしながら照明用光源と露光機構部とを別個
独立に構成した場合、マスクパターンを均一に照
明する為に光源からの光束を露光機構部の光束受
光口に常に同一の条件で精度良く入射させなけれ
ばならない。
However, when the illumination light source and the exposure mechanism are configured separately, in order to uniformly illuminate the mask pattern, the light beam from the light source must always enter the light beam receiving port of the exposure mechanism under the same conditions and with high precision. It won't happen.

一般に露光機構部にはスツルプアンドリピート
の為、例えば大きさが約30×30cm、重さが約20Kg
のX,Yステージを移動させたり、又マスクパタ
ーンとウエハーの焦点を自動的に行うオートフオ
ーカス機構による焦点合わせの為の移動部材が組
込まれている。そして繰り返して焦点合わせや露
光を行う為に露光機構部内では常に部材が移動し
ている。この為にどうしても露光機構部の各部材
が僅かであるが振動してしまう。従つて別個独立
の光源からの光束を露光機構部の所定位置に精度
良く入射させることは非常に困難となつてくる。
特に振動があると照明光学系によるマスクパター
ンの照明を均一に行うことが困難となり、マスク
パターンをウエハー面上に焼付ける際の線幅変化
等の誤差となつてIC,LSI等の製造上の不良率を
高めてしまう。
Generally, the exposure mechanism has a stretch-and-repeat mechanism, so the size is approximately 30 x 30 cm and the weight is approximately 20 kg.
A moving member is incorporated for moving the X and Y stages of the wafer, and for focusing by an autofocus mechanism that automatically focuses the mask pattern and the wafer. In order to repeatedly perform focusing and exposure, members are constantly moving within the exposure mechanism. For this reason, each member of the exposure mechanism inevitably vibrates, albeit slightly. Therefore, it becomes very difficult to make the light beams from separate and independent light sources enter a predetermined position of the exposure mechanism with high precision.
In particular, vibrations make it difficult to uniformly illuminate the mask pattern using the illumination optical system, resulting in errors such as changes in line width when printing the mask pattern onto the wafer surface, which can cause problems in the production of ICs, LSIs, etc. This will increase the defective rate.

本発明は、このような事情にかんがみなされた
もので、その目的は、別個独立に配置された照明
用光源と露光機構部を用いて高精度な露光を可能
とする露光装置を提供することにある。
The present invention was conceived in view of the above circumstances, and its purpose is to provide an exposure apparatus that enables highly accurate exposure using an illumination light source and an exposure mechanism that are arranged separately. be.

上記した目的を達成するために、本発明の露光
装置は、マスクのパターンをウエハに焼付けるの
に役立つ露光光を発生する光源に対して前記マス
クと前記ウエハを保持する露光機構部を別個独立
に配置し、前記露光機構部側には、前記光源で発
生した露光光を多光束に分割した後に、前記マス
クのパターンを前記ウエハに焼付けるために分割
された各光束を前記マスクに照射する照射系と、
前記光源で発生した露光光の前記照射系への入射
位置の変動を防止する防振系を設けたことを特徴
としている。
In order to achieve the above object, the exposure apparatus of the present invention provides an exposure mechanism section that holds the mask and the wafer separately and independently relative to a light source that generates exposure light useful for printing a mask pattern onto a wafer. and on the exposure mechanism side, after dividing the exposure light generated by the light source into multiple beams, the mask is irradiated with each divided beam in order to print the pattern of the mask onto the wafer. an irradiation system;
The present invention is characterized in that an anti-vibration system is provided to prevent fluctuations in the position of exposure light generated by the light source entering the irradiation system.

また、前記防振系は複数の光学部材と、前記光
学部材の一方を前記露光機構部で生じる振動に対
して空間的に固定とするジヤイロを有すること、
更には、前記光源はエキシマレーザであることを
特徴としている。
Further, the vibration isolation system includes a plurality of optical members and a gyroscope that spatially fixes one of the optical members against vibrations generated in the exposure mechanism section;
Furthermore, the light source is an excimer laser.

そして、これにより、別個独立に配置された照
明用光源からの光束を常に露光機構部内の所定位
置に精度良く導光することを可能とし、高精度な
露光を可能にしている。
This makes it possible to always accurately guide the luminous flux from the independently arranged illumination light sources to a predetermined position within the exposure mechanism section, making it possible to perform highly accurate exposure.

次に本発明の露光装置の一実施例の概略図を第
1図に示す。同図において1は照明用光源で例え
ばエキシマレーザー等の高出力の大型光源であ
る。2は露光機構部で付番4以降の部材から成
り、又3は防振光学系で後述するようにジヤイロ
を伴つた光学部材より構成されている。4はビー
ムエキスパンダーとオプテイカルインテグレータ
ーを順置した系で、オプテイカルインテグレータ
ーはマスクパターンを均一に照明する為であり例
えばフライアイレンズ若しくは四角柱レンズの束
より構成されている。5は照明用コンデンサーレ
ンズで、オプテイカルインテグレーターを発した
多光束をコリメートする。6は反射鏡、7はIC
等の集積回路のパターンが描かれているマスク、
8は投影光学系、9はウエハーで、投影光学系8
はマスク7の像をウエハー9上に投影するもので
ある。
Next, a schematic diagram of an embodiment of the exposure apparatus of the present invention is shown in FIG. In the figure, reference numeral 1 denotes a light source for illumination, which is a large, high-output light source such as an excimer laser. Reference numeral 2 denotes an exposure mechanism section, which is made up of members numbered 4 onwards, and 3 is an anti-vibration optical system, which is made up of optical members with a gyroscope, as will be described later. 4 is a system in which a beam expander and an optical integrator are placed side by side. The optical integrator is for uniformly illuminating the mask pattern and is composed of, for example, a fly's eye lens or a bundle of square prism lenses. 5 is a condenser lens for illumination, which collimates the multi-luminous flux emitted by the optical integrator. 6 is a reflector, 7 is an IC
Masks with integrated circuit patterns such as
8 is a projection optical system, 9 is a wafer, and projection optical system 8
is for projecting the image of the mask 7 onto the wafer 9.

本実施例の防振光学系3は露光機構部2の一部
に設けられており、露光機構部2から生ずる振動
で光源1の光軸に対して露光機構部2の光軸が偏
心するのを補正して光源1からの光束が常にオプ
テイカルインテグレーター4の所定位置に入射す
るようにしている。
The anti-vibration optical system 3 of this embodiment is provided in a part of the exposure mechanism section 2, and prevents the optical axis of the exposure mechanism section 2 from being decentered with respect to the optical axis of the light source 1 due to vibrations generated from the exposure mechanism section 2. is corrected so that the light beam from the light source 1 always enters the optical integrator 4 at a predetermined position.

第2図に本実施例に用いる防振光学系の一実施
例の光学系の概略図を示す。同図に示す防振光学
系は直角の2つのプリズム21,22との一方の
プリズム22にジヤイロ23を取付けて空間的に
固定される様に構成したものであり、2枚鏡の原
理により直角プリズムを傾けても光軸は偏心しな
いで常に光束Sが所定位置に入射するようになつ
ている。
FIG. 2 shows a schematic diagram of an optical system of an embodiment of the vibration-proof optical system used in this embodiment. The anti-vibration optical system shown in the figure has two right-angled prisms 21 and 22, and a gyro 23 is attached to one of the prisms 22, so that they are spatially fixed. Even if the prism is tilted, the optical axis is not decentered and the light beam S always enters a predetermined position.

本実施例におけるプリズム材として例えば光源
に波長248.5nmを主に発振波長とするエキシマレ
ーザーを用いるときは溶融石英、CaF2等で構成
するのが良い。
The prism material in this embodiment is preferably made of fused silica, CaF 2 or the like when an excimer laser whose main oscillation wavelength is 248.5 nm is used as a light source.

本発明において照明用光源から放射される光束
が十分透過するようなものであれば第3図A,B
に示すように液体31を2つのガラス板32,3
3で囲み制御系34により構成した防振光学系を
照明光学系の一部若しくはオプテイカルインテグ
レーターの一部に配置してもよい。又第4図A,
Bに示すように照明光学系の一部若しくは露光機
構部の投影光学系41の前方に可変偏角プリズム
の作用をする平凸レンズ42と平凹レンズ43と
を組合わせそのうちの一方のレンズ42をジヤイ
ロ装置44により空間的に固定した防振光学系を
用いて光源に対する露光機構部内の振動による光
束の入射位置への影響を除去するようにしても良
い。
In the present invention, if the luminous flux emitted from the illumination light source is sufficiently transmitted, Fig. 3A and B
As shown in FIG.
The anti-vibration optical system constituted by the control system 34 surrounded by 3 may be disposed in a part of the illumination optical system or in a part of the optical integrator. Also, Figure 4A,
As shown in B, a plano-convex lens 42 and a plano-concave lens 43, which act as a variable polarization prism, are combined in front of the projection optical system 41 of a part of the illumination optical system or the exposure mechanism, and one of the lenses 42 is rotated. An anti-vibration optical system spatially fixed by the device 44 may be used to eliminate the influence of vibrations within the exposure mechanism relative to the light source on the incident position of the light beam.

その他本発明においては特公昭56−34847号公
報、特公昭56−40805号公報、特公昭57−7415号
公報等で開示されている防振光学系を適用するこ
とができる。
In addition, in the present invention, vibration-proof optical systems disclosed in Japanese Patent Publication No. 56-34847, Japanese Patent Publication No. 56-40805, Japanese Patent Publication No. 57-7415, etc. can be applied.

尚本発明において照明用光学系内において振動
が生ずる場合には、露光機構部と共に照明用光学
系内にも防振光学系を設けておけば更に高精度の
露光装置を達成することができる。又防振光学系
をオプテイカルインテグレーターと一体化すれば
装置全体が簡素化されるので好ましい。
In the present invention, if vibration occurs within the illumination optical system, an exposure apparatus with even higher precision can be achieved by providing a vibration-proofing optical system within the illumination optical system as well as the exposure mechanism. Furthermore, it is preferable to integrate the anti-vibration optical system with the optical integrator, since this simplifies the entire device.

以上の如く、本発明によれば、別個独立に配置
された照明用光源からの光束を常に露光機構部内
の所定位置に精度良く導光することが可能となる
ので、光源と露光機構部間で振動が生じても常に
良好にマスクを照明することができ、高精度な露
光を可能にできる。
As described above, according to the present invention, it is possible to always guide the luminous flux from the independently arranged illumination light sources to a predetermined position within the exposure mechanism with high accuracy, so that the light flux between the light source and the exposure mechanism can be accurately guided. Even if vibrations occur, the mask can always be well illuminated, making highly accurate exposure possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の概略図、第2図、
第3図、第4図は各々本発明の一部に用いる一実
施例の光学系の概略図である。 図中、1は照明用光源、2は露光機構部、3は
防振光学系、4はオプテイカルインテグレータ
ー、5は照明用コンデンサー、7はマスクパター
ン、8は投影光学系、9はウエハー面、23,3
4,44はジヤイロである。
FIG. 1 is a schematic diagram of an embodiment of the present invention, FIG.
FIGS. 3 and 4 are schematic diagrams of an optical system according to an embodiment used as a part of the present invention. In the figure, 1 is an illumination light source, 2 is an exposure mechanism, 3 is an anti-vibration optical system, 4 is an optical integrator, 5 is an illumination condenser, 7 is a mask pattern, 8 is a projection optical system, 9 is a wafer surface, 23,3
Numbers 4 and 44 are Jairo.

Claims (1)

【特許請求の範囲】 1 マスクのパターンをウエハに焼付けるのに役
立つ露光光を発生する光源に対して前記マスクと
前記ウエハを保持する露光機構部を別個独立に配
置し、前記露光機構部側には、前記光源で発生し
た露光光を多光束に分割した後に、前記マスクの
パターンを前記ウエハに焼付けるために分割され
た各光束を前記マスクに照射する照射系と、前記
光源で発生した露光光の前記照射系への入射位置
の変動を防止する防振系を設けたことを特徴とす
る露光装置。 2 前記防振系は複数の光学部材と、前記光学部
材の一方と前記露光機構部で生じる振動に対して
空間的に固定とするジヤイロを有することを特徴
とする特許請求の範囲第1項記載の露光装置。 3 前記光源はエキシマレーザであることを特徴
とする特許請求の範囲第2項記載の露光装置。
[Scope of Claims] 1. An exposure mechanism section that holds the mask and the wafer is arranged separately and independently relative to a light source that generates exposure light useful for printing a mask pattern onto a wafer, and the exposure mechanism section side The method includes: an irradiation system that divides the exposure light generated by the light source into multiple beams and then irradiates the mask with each divided beam in order to print the pattern of the mask onto the wafer; An exposure apparatus comprising an anti-vibration system that prevents fluctuations in the position of exposure light entering the irradiation system. 2. The vibration isolation system includes a plurality of optical members and a gyroscope that is spatially fixed against vibrations generated in one of the optical members and the exposure mechanism section. exposure equipment. 3. The exposure apparatus according to claim 2, wherein the light source is an excimer laser.
JP59099559A 1984-05-17 1984-05-17 Exposing device Granted JPS60242421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59099559A JPS60242421A (en) 1984-05-17 1984-05-17 Exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59099559A JPS60242421A (en) 1984-05-17 1984-05-17 Exposing device

Publications (2)

Publication Number Publication Date
JPS60242421A JPS60242421A (en) 1985-12-02
JPH0519692B2 true JPH0519692B2 (en) 1993-03-17

Family

ID=14250502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59099559A Granted JPS60242421A (en) 1984-05-17 1984-05-17 Exposing device

Country Status (1)

Country Link
JP (1) JPS60242421A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3583924D1 (en) * 1984-06-21 1991-10-02 American Telephone & Telegraph LITHOGRAPHY IN THE FAR UV AREA.
DE102013202292A1 (en) * 2013-02-13 2014-01-30 Carl Zeiss Smt Gmbh Extreme UV (EUV) projection exposure system for semiconductor lithography, has optic element that is mechanically connected with gyro worked against tipping of optic element

Also Published As

Publication number Publication date
JPS60242421A (en) 1985-12-02

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