JPH05190582A - Resin sealed semiconductor device and manufacture thereof - Google Patents

Resin sealed semiconductor device and manufacture thereof

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Publication number
JPH05190582A
JPH05190582A JP118292A JP118292A JPH05190582A JP H05190582 A JPH05190582 A JP H05190582A JP 118292 A JP118292 A JP 118292A JP 118292 A JP118292 A JP 118292A JP H05190582 A JPH05190582 A JP H05190582A
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
adhesive
semiconductor element
member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP118292A
Other languages
Japanese (ja)
Inventor
Yutaka Okuaki
裕 奥秋
Original Assignee
Oki Electric Ind Co Ltd
沖電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd, 沖電気工業株式会社 filed Critical Oki Electric Ind Co Ltd
Priority to JP118292A priority Critical patent/JPH05190582A/en
Publication of JPH05190582A publication Critical patent/JPH05190582A/en
Application status is Pending legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Abstract

PURPOSE: To obtain a resin sealed semiconductor device where resin is prevented from oozing out and which is stable in electrical insulation by a method wherein an adhesive member impregnated with adhesive agent is formed using insulating cloth as filler and provided onto inner leads, and a semiconductor element is bonded to the inner leads through the intermediary of the adhesive member by thermocompression.
CONSTITUTION: A semiconductor element is bonded to the inner leads of a lead frame to form a resin-sealed semiconductor device, where the semiconductor element 3 is fixed to the inner leads 2 through the intermediary of an adhesive member 4, and the adhesive member 4 is formed of an insulating cloth 5 impregnated with adhesive agent 6.
COPYRIGHT: (C)1993,JPO&Japio

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、樹脂封止半導体装置のリードフレームのインナリードに半導体素子を固着する技術に関するものである。 The present invention relates to a technique for fixing a semiconductor element to the inner leads of the lead frame of the resin-encapsulated semiconductor device.

【0002】 [0002]

【従来の技術】従来、このような分野の技術としては、 Conventionally, as a technology in this field is,
例えば特開昭64−33939号公報に示すようなものがあった。 For example there is one as shown in JP 64-33939 JP. かかる従来の半導体装置の接着剤のベース樹脂には、各種の熱可塑あるいは熱硬化性樹脂が用いられ、具体的にはポリフエニレンサルフアイド、芳香族ポリエステル、ポリエーテルスルフオン、ポリアミドイミド、ポリイミド等の熱可塑性樹脂やエポキシ樹脂、シリコン樹脂、ポリイミド樹脂等の熱硬化性樹脂を用いることができる。 The base resin of the adhesive such conventional semiconductor device, various kinds of thermoplastic or thermosetting resin is used for, specifically, polyphenylene sulfide off idle, aromatic polyester, polyether sulfone Huong, polyamideimide, polyimide thermoplastic resins and epoxy resins and the like, a silicone resin, a thermosetting resin such as polyimide resin.

【0003】また、ベース樹脂に配合される充填剤は、 [0003] Fillers that are incorporated into the base resin,
無機充填剤としてガラス、シリカ、アルミナ、ジルコン等の微粉末を高温火炎中で溶融させ、その表面張力で球型化したものが用いられる。 Glass as inorganic filler, silica, alumina, a fine powder of zircon is melted at a high temperature flame, is used those spherical reduction in surface tension. 有機充填剤として懸濁重合によって得られるポリビニルカルバゾル、フエノール樹脂、エポキシ樹脂、ポリイミド樹脂等の球型微粉末が用いられる。 Polyvinyl carbazole obtained by suspension polymerization as organic fillers, phenolic resins, epoxy resins, and spherical fine powder such as a polyimide resin is used. 充填剤はベース樹脂に対して任意の割合で配合することが出来るが、作業性、接着性の観点から10 Filler can be blended in any proportion with respect to the base resin, workability, from the viewpoint of adhesiveness 10
〜80容量%の範囲が望ましい。 To 80% by volume of the range it is desirable. ベース樹脂に対する充填剤の混合は、ベース樹脂の性状に応じ常温あるいは加熱溶融状態で、または有機溶剤に溶かしたワニス状態で、機械的に攪拌混合することによって行なわれる。 Mixing the filler to the base resin, at room temperature or heated molten state according to the properties of the base resin or varnish state dissolved in an organic solvent, and it is mechanically done by mixing and stirring. 得られた接着剤のリードフレームへの塗布は、接着剤の性状に応じ常温ないしは接着剤の溶融温度以上の高温で行なわれる。 Applied to the lead frame of the resulting adhesive is performed at room temperature or a temperature higher than the melting temperature of the adhesive according to the properties of the adhesive. ベース樹脂として熱硬化性樹脂を用いた接着剤はリードフレームに塗布する際、高温で行なうと樹脂の硬化反応が進行し接着剤としての働きを失ってしまうため、それより、低温で行なうことが必要である。 When adhesive using a thermosetting resin as a base resin to be applied to the lead frame, since performed at a high temperature curing reaction of the resin loses the function as an adhesive proceeds, than, be carried out at low temperature is necessary.

【0004】このようにして、リードフレームに接着剤を塗布した後、再度リードフレームを接着剤の溶融温度以上に加熱し、すばやく半導体素子を所定の位置に固着し、熱可塑系接着剤を用いた場合は、そのまま冷却し、 [0004] Thus, use after applying the adhesive to the lead frame, and heating the lead frame again above the melting temperature of the adhesive, the fast semiconductor element fixed to a predetermined position, the thermoplastic adhesive If you had, as it is cooled,
また、熱硬化系接着剤を用いた場合は樹脂の硬化反応が完了した後冷却することによって、半導体素子をリードフレームに接着することができる。 In the case of using a thermosetting adhesive by cooling after the curing reaction of the resin is complete, it is possible to bond the semiconductor element to the lead frame.

【0005】接着剤を予め半導体素子の裏面に塗っておき、これをインナリードに接着することも考えられるが、封止樹脂と接着剤間の接着性を封止樹脂と半導体素子間の接着性と比較すると、封止樹脂と接着剤間の接着性の方がかなり劣り、このような方法を用いた場合は、 [0005] Leave painted on the back surface of the pre-semiconductor element adhesive, it is conceivable to bond them to the inner leads, adhesion between the sealing resin and the semiconductor element adhesion between the sealing resin adhesive By comparison, significantly inferior towards adhesion between the sealing resin and the adhesive, the use of such a method and,
従来のように絶縁フィルムやシートを用いた場合と同様にインナリード間に隙間が発生し易く、諸特性が良好な封止品を得ることが難しい。 Liable gap is generated between the case as well as the inner leads using an insulating film or sheet as in the prior art, it is difficult to properties to obtain a good seal products.

【0006】 [0006]

【発明が解決しようとする課題】このように、上記した従来技術では、充填剤を配合した熱可塑性または熱硬化性樹脂接着剤によって、半導体素子をリードフレームのインナリードと接着するようにしたので、接着剤の樹脂分がインナリードの裏面等に滲み出しまい、インナリード裏面が不安定になり、ワイヤボンディング工程でクランプする時に接合が不安定になるという問題点があった。 [Problems that the Invention is to Solve As described above, in the conventional art described above, a thermoplastic or thermosetting resin adhesive formulated with filler. Thus to bond the semiconductor element and the inner leads of the lead frame , resin content of the adhesive is seeded exudes on the rear surface or the like of the inner lead becomes unstable inner leads back side, there is a problem that bonding becomes unstable when clamping the wire bonding process.

【0007】また、粒形の充填剤を配合するようにしたので、半導体素子の固着時に微小移動させる時に、インナリードの幅は極めて狭いので、粒形の充填剤がインナリード主表面からずれて、インナリード上に存在しない場合があり、一定の間隔が保持されず、電気的絶縁性に問題点があった。 Further, since such blending particle shape of the filler, when to be slightly moved during the anchoring of the semiconductor element, the width of the inner leads is very narrow, particle shape of the filler is displaced from the inner lead main surface , may not exist on the inner lead, a constant interval can not be held, it was in electrical insulation problems. 本発明は、上記問題点を除去し、絶縁性クロスを充填材として接着剤を含浸させた接着部材を形成し、インナリード上に配置し、半導体素子を加熱押圧して固着するようにしたので、樹脂の滲み出しが低減化されるとともに、電気的絶縁性が安定化された樹脂封止半導体装置及びその製造方法を提供することを目的とする。 The present invention is to eliminate the above problems, an insulating cross the adhesive to form an adhesive member impregnated as filler, disposed on the inner leads. Thus fixed by hot-pressing the semiconductor element , together with the bleeding of the resin is reduced, the electrical insulating property and an object thereof is to provide a stabilized resin sealed semiconductor device and a manufacturing method thereof.

【0008】 [0008]

【課題を解決するための手段】本発明は、上記目的を達成するために、リードフレームのインナリードに半導体素子を固着してなる樹脂封止半導体装置において、前記半導体素子を前記インナリードに固着する接着部材であって、該接着部材は、被含浸部材と、該被含浸部材に含浸される接着剤とを設けるようにしたものである。 Means for Solving the Problems The present invention, in order to achieve the above object, in the resin sealing semiconductor device formed by fixing a semiconductor element to the inner leads of the lead frame, securing the semiconductor element to said inner leads an adhesive member for, the adhesive member is obtained by the provided and the object to be impregnated member, and an adhesive impregnated to said impregnation member.

【0009】また、リードフレームのインナリードに半導体素子を固着してなる樹脂封止半導体装置の製造方法において、前記半導体素子を前記リードフレームに固着するにあたり、インナリードの主表面に接着部材を配置し、加熱ガスにて軟化または溶融させ、前記半導体素子を押圧し、固着させるようにしたものである。 [0009] In the method of manufacturing the resin-sealed semiconductor device comprising fixing a semiconductor element to the inner leads of the lead frame, when securing said semiconductor element to the lead frame, placing the adhesive member on the main surface of the inner lead and, softened or melted by heating gas, and presses the semiconductor elements, is obtained so as to fix.

【0010】 [0010]

【作用】本発明によれば、アイランドを除去したリードフレームに半導体素子を固着する樹脂封止半導体装置において、インナリード内方端主面へ絶縁性クロスに接着剤(接着樹脂)を含浸させた接着部材を載置し、半導体素子を押圧固着し、接着樹脂を加熱溶融させて、前記インナリード内方端主表面に半導体素子を固着する。 According to the present invention, in the resin sealing semiconductor device for fixing the semiconductor device to the lead frame removing the island, impregnated with adhesive (adhesive resin) in an insulating cross the inner lead inner end main surface an adhesive member is placed, the semiconductor device is pressed fixing, the adhesive resin is heated and melted to secure the semiconductor element to the inner lead inner end main surface.

【0011】したがって、従来のように、半導体素子の固着にあたり、接着剤がインナリード下側に軟化又は液状化している状態で半導体素子を押圧工程によって、接着剤がインナリード下側に流れ出して、突起部を形成することを防止することができる。 Accordingly, as in the prior art, when fixing the semiconductor element, the pressing step of the semiconductor device in a state where the adhesive is softened or liquefied in the inner leads downward, the adhesive flows out to the inner lead bottom side, it is possible to prevent the formation of a protrusion.

【0012】 [0012]

【実施例】以下、本発明の実施例について図を用いて説明する。 EXAMPLES The following will be described with reference to the drawings an embodiment of the present invention. 図1は本発明の実施例を示す半導体素子のリードフレームへの実装状態を示す要部断面図(図3のA− Figure 1 is a fragmentary sectional view showing a mounted state of the lead frame of a semiconductor device showing an embodiment of the present invention (in FIG. 3 A-
A断面図)、図2は本発明の実施例を示す樹脂封止半導体装置の断面図、図3は本発明の実施例を示す樹脂封止半導体装置の平面図、図4はその樹脂封止半導体装置の絶縁性クロスを示す図、図5はその絶縁性クロスに接着剤が含浸された接着部材の断面図である。 A cross-sectional view), a cross-sectional view of a resin sealed semiconductor device according to the embodiment of Figure 2 the present invention, FIG. 3 is a plan view of a resin sealed semiconductor device showing an embodiment of the present invention, FIG. 4 is the resin sealing shows an insulating cloth semiconductor device, FIG 5 is a sectional view of the bonding member with adhesive impregnated into the insulating cloth.

【0013】なお、ここで、パッケージの外形寸法を、 [0013] It should be noted that, here, the outer dimensions of the package,
規格サイズに維持し、大型の半導体素子を搭載する技術として、一般的に樹脂封止半導体装置に用いられるリードフレームのアイランドを削除した実装技術が用いられる。 Maintaining the standard size, as a technique for mounting a large-sized semiconductor device, commonly implemented techniques remove island of a lead frame used in the resin sealing semiconductor device is used. これらの図に示すように、1はリードフレーム、2 As shown in these figures, the lead frame 1, 2
はそのインナリード、3は半導体素子、4は接着部材であり、2層の絶縁性クロス5、例えば、ガラス繊維クロス(織布)と接着剤6からなる。 Its inner lead, 3 denotes a semiconductor element, is 4 is an adhesive member, two layers of insulating cloth 5, for example, made of adhesive 6 and a glass fiber cloth (woven fabric).

【0014】このように、アイランドの代用として用いられるインナリード2の主表面上に、半導体素子3を固着搭載する接着部材4として、例えば、図4に示すような絶縁性クロス5に、図5に示すように接着剤6を含浸させて形成し、所定の形状にプレス等で打ち抜き加工によって、小片化し、接着部材4とする。 [0014] Thus, on the main surface of the inner lead 2 used as a substitute of the islands, as the adhesive member 4 for fixing mounting the semiconductor element 3, for example, an insulating cloth 5 as shown in FIG. 4, FIG. 5 the adhesive 6 formed by impregnating as shown in, by punching by a press or the like into a predetermined shape, and small pieces, and the adhesive member 4. なお、絶縁性クロス5は、2層に形成しているが、一層でもよい。 Incidentally, the insulating cloth 5 is are formed in two layers, may further also.

【0015】また、接着剤6も熱可塑性樹脂でもよいし、熱硬化性樹脂でもよい。 Further, also it may be a thermoplastic resin adhesive 6 may be a thermosetting resin. この場合にはBステージ化した前記熱硬化性樹脂が好適である。 This is the case it is preferable the thermosetting resin B stage. 接着剤6としての樹脂は固着機能が得られれば、限定するものではない。 If the resin as an adhesive 6 Rarere obtained anchoring function, not limiting.
接着部材4の厚さも半導体素子3を固着でき、また、加熱押圧固着時に下側に軟化又は液状化した接着剤が滲み出し、又は落下しない程度の量から成る厚さに形成されておれば、特に限定されるものではない。 The thickness of the adhesive member 4 can also be fixed to the semiconductor element 3, also, adhesive softened or liquefied in the lower side when the heating press fixation is exuded, or dropped not be formed to a thickness consisting of the amount of the degree if I, but the present invention is not particularly limited.

【0016】固着条件については、例えばエポキシ樹脂を接着剤に使用した場合には、100℃前後に加熱されたガスを、インナリード2上に個片化された接着部材4 [0016] For fixing conditions, for example when using an epoxy resin adhesive, a 100 ° C. has been heated before or after the gas, an adhesive member is singulated onto the inner leads 2 4
を載置し、前記加熱ガスを吹きつけ、接着剤6を軟化又は溶融液状化させて半導体素子3を押圧して固着させる。 It was placed blows the heated gas, with an adhesive 6 softened or melted liquefied to fix by pressing the semiconductor element 3. その後、150℃程度の恒温槽等で完全固化接着させる。 Thereafter, to fully solidify the adhesive at 0.99 ° C. approximately constant temperature bath or the like. 加熱ガスは一般的にN 2ガスが用いられる。 The heated gas generally N 2 gas is used. 固化条件については、恒温槽を用いなくてもよく、加熱ガスにて固着させると同時に固化させてもよく、限定するものでない。 For solidification conditions may not a thermostatic chamber, when fixed by heating gas may be solidified at the same time, not limiting.

【0017】クロスはメッシュ状に特殊織りしたものでも、平織りしたものでもよく、織り方に限定はしない。 [0017] The cross is also obtained by weaving special to mesh, it may be obtained by a plain weave, but are not limited to weave.
また、不織布でもよい。 In addition, it may be a non-woven fabric. クロスの厚さも0.1〜0.5 The thickness of the cross is also 0.1 to 0.5
mm程度の単層でも数枚重ねて接着剤の含浸能力を増加させてもよい。 Overlapping several sheets in mm approximately monolayer may increase the impregnation ability of the adhesive. クロスに代わってスポンジ状の部材に接着剤を含浸させて半導体素子の固着に用いるようにしてもよい。 It may be used in the fixation of the semiconductor element by impregnating an adhesive sponge-like member in place of the cross. スポンジ状の部材については、金属極細線を表面不導体化処理して用いることができる。 The sponge-like member may be surface-treated passivated metal ultrafine wire. 放熱(伝熱) Heat dissipation (heat transfer)
性が良く、高周波半導体素子の搭載に好適である。 Sex is good, is suitable for mounting a high-frequency semiconductor element. 半導体素子が大型化しているので、封止エリヤと半導体素子が略同一程度の実装であるので、インナリード内方端から外部リードへかけての樹脂封止エリヤからインナリード上を接着剤が滲み出すを防止することができるので、 Since the semiconductor element is large, since sealing Elijah and the semiconductor element is substantially the same order of implementation, the adhesive bleeding on inner lead from the resin sealing Elijah over the inner lead inner end to the outer lead it is possible to prevent the issue,
外部水分、不純物の侵入を防止することができる。 It is possible to prevent external moisture, impurities from entering.

【0018】なお、図3に示すように、インナリード2 [0018] It should be noted that, as shown in FIG. 3, the inner lead 2
の先端は金属細線7を介して、半導体素子のパッドに接続され、半導体素子3は封止樹脂8により封止される。 The tip through the thin metal wire 7 is connected to the pad of the semiconductor element, the semiconductor element 3 is sealed by the sealing resin 8.
また、上記実施例は、COL(チップ・オン・リード) Further, the above embodiment, COL (chip on lead)
の場合を示したが、図6に示すように、LOC(リード・オン・チップ)タイプに構成してもよい。 Shows the case of, as shown in FIG. 6, LOC may be configured to (lead-on-chip) type. すなわち、 That is,
リードフレーム11のインナリード12の下方に半導体素子13を固着するにあたり、絶縁性クロス15に接着剤16を含浸させた接着部材14を介して、半導体素子13を固着する。 Upon fixing the semiconductor element 13 below the inner leads 12 of the lead frame 11, via an adhesive member 14 impregnated with glue 16 on the insulating cloth 15, to fix the semiconductor element 13. 半導体素子13は封止樹脂18により、封止される。 The semiconductor element 13 by the sealing resin 18 and sealed.

【0019】したがって、図示しないが、接着剤16の滲み出しがなく、インナリード12と半導体素子13のパッドとの接続を良好に行うことができる。 [0019] Thus, although not shown, there is no bleeding of the adhesive 16, it can be performed well connected to the pads of the inner leads 12 and the semiconductor element 13. なお、本発明は上記実施例に限定されるものではなく、本発明の趣旨に基づき種々の変形が可能であり、それらを本発明の範囲から排除するものではない。 The present invention is not limited to the above embodiments, but various modifications are possible based on the spirit of the present invention are not excluded from the scope of the present invention.

【0020】 [0020]

【発明の効果】以上、詳細に説明したように、本発明によれば、アイランドを削除したリードフレームのインナリードに絶縁性クロスに接着剤を含浸させて、半導体素子を固着するようにしたので、半導体素子の固着にあたり、従来のように、接着剤がインナリード下側に軟化又は液状化している状態で半導体素子を押圧工程によって、接着剤がインナリード下側に流れ出して、突起部を形成することを防止することができる。 Effect of the Invention] As described above in detail, according to the present invention, the inner leads of the lead frame deleting the islands of adhesive impregnated into the insulating cloth, since so as to fix the semiconductor element , when fixing the semiconductor element, as in the prior art, the pressing step of the semiconductor device in a state where the adhesive is softened or liquefied in the inner leads downward, the adhesive flows out to the inner lead bottom side, forming a protrusion it is possible to prevent that.

【0021】したがって、後工程の金属細線による配線工程において、不具合の発生を低減させることができる。 [0021] Thus, in the wiring process by thin metal wire in the subsequent step, it is possible to reduce the occurrence of problems. また、接着工程も小片化した接着部材なので取り扱いが容易で作業の効率化を図ることができる。 Further, since the bonding step also adhesion member that small pieces can be made more efficient work it is easy to handle. 更に、電気的絶縁性の向上及び安定化を図ることができる。 Furthermore, it is possible to improve and stabilize the electrical insulation.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施例を示す半導体素子のリードフレームへの実装状態を示す要部断面図である。 1 is a fragmentary cross-sectional view showing a mounted state of the lead frame of a semiconductor device showing an embodiment of the present invention.

【図2】本発明の実施例を示す樹脂封止半導体装置の断面図である。 2 is a cross-sectional view of a resin sealed semiconductor device showing an embodiment of the present invention.

【図3】本発明の実施例を示す樹脂封止半導体装置の平面図である。 3 is a plan view of a resin sealed semiconductor device showing an embodiment of the present invention.

【図4】本発明の実施例を示す樹脂封止半導体装置の絶縁性クロスを示す図である。 It is a diagram showing an insulating cloth resin sealing semiconductor device showing an embodiment of the present invention; FIG.

【図5】本発明の実施例を示す樹脂封止半導体装置の絶縁性クロスに接着剤が含浸された接着部材の断面図である。 5 is a cross-sectional view of the bonding member with adhesive impregnated into the insulating cloth resin sealing semiconductor device showing an embodiment of the present invention.

【図6】本発明の他の実施例を示す樹脂封止半導体装置の断面図である。 6 is a cross-sectional view of a resin sealed semiconductor device showing another embodiment of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1,11 リードフレーム 2,12 インナリード 3,13 半導体素子 4,14 接着部材 5,15 絶縁性クロス 6,16 接着剤 7 金属細線 8,18 封止樹脂 1,11 leadframe 2,12 inner leads 3,13 semiconductor device 4,14 adhesive member 5,15 insulating cross 6,16 adhesive 7 thin metal wire 8, 18 sealing resin

Claims (5)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 リードフレームのインナリードに半導体素子を固着してなる樹脂封止半導体装置において、 前記半導体素子を前記インナリードに固着する接着部材であって、該接着部材は、 (a)被含浸部材と、 (b)該被含浸部材に含浸される接着剤とからなることを特徴とする樹脂封止半導体装置。 1. A resin-sealed semiconductor device comprising fixing a semiconductor element to the inner leads of the lead frame, an adhesive member for fixing the semiconductor element to said inner lead, the adhesive member may be (a) impregnation member, (b) resin-sealed semiconductor device characterized by comprising a bonding agent that is impregnated to said impregnation member.
  2. 【請求項2】 前記被含浸部材は、ガラス繊維又はガラス織布を含むことを特徴とする請求項1記載の樹脂封止半導体装置。 Wherein said object to be impregnated member is resin-sealed semiconductor device according to claim 1, characterized in that it comprises glass fibers or woven glass fabric.
  3. 【請求項3】 リードフレームのインナリードに半導体素子を固着してなる樹脂封止半導体装置の製造方法において、 (a)前記半導体素子を前記リードフレームに固着搭載するにあたり、インナリードの主表面に接着部材を配置し、 (b)加熱ガスにて軟化または溶融させ、前記半導体素子を押圧し、固着させることを特徴とする樹脂封止半導体装置の製造方法。 3. A method of manufacturing a resin-sealed semiconductor device comprising fixing a semiconductor element to the inner leads of the lead frame, the (a) the semiconductor element Upon securing mounted on the lead frame, the main surface of the inner lead an adhesive member is disposed, (b) is softened or melted at the heating gas, wherein the semiconductor device is pressed, a manufacturing method of the resin-sealed semiconductor device, characterized in that to fix.
  4. 【請求項4】 前記接着部材は、クロスに接着剤を含浸させ、プレス等の切断方法により、個片加工したことを特徴とする樹脂封止半導体装置の製造方法。 Wherein said adhesive member is impregnated with adhesive to the cross, the cutting method such as a press method for producing a resin-sealed semiconductor device, characterized in that the working pieces.
  5. 【請求項5】 前記接着部材は、絶縁処理した金属極細線の不織布に接着剤を含浸させた熱伝導性の接着部材を用いることを特徴とする樹脂封止半導体装置の製造方法。 Wherein said adhesive member, manufacturing method of the resin-sealed semiconductor device characterized by using the adhesive member of heat conductive impregnated with adhesive nonwoven insulated metal hairline.
JP118292A 1992-01-08 1992-01-08 Resin sealed semiconductor device and manufacture thereof Pending JPH05190582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP118292A JPH05190582A (en) 1992-01-08 1992-01-08 Resin sealed semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP118292A JPH05190582A (en) 1992-01-08 1992-01-08 Resin sealed semiconductor device and manufacture thereof

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JPH05190582A true JPH05190582A (en) 1993-07-30

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