JPH05190472A - Cvd apparatus - Google Patents
Cvd apparatusInfo
- Publication number
- JPH05190472A JPH05190472A JP2621492A JP2621492A JPH05190472A JP H05190472 A JPH05190472 A JP H05190472A JP 2621492 A JP2621492 A JP 2621492A JP 2621492 A JP2621492 A JP 2621492A JP H05190472 A JPH05190472 A JP H05190472A
- Authority
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- Prior art keywords
- substrate
- voltage
- infrared lamp
- current
- infrared
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造に使用する
ＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus used for semiconductor manufacturing.
【０００２】[0002]
【従来の技術】従来装置は、図１を参照して説明する
と、基板加熱室にある並列接続された多数本の赤外線ラ
ンプ１により反応室内のサセプタ１２上に載置された基
板２を加熱し、基板測温用熱電対３により検出された基
板温度信号を温度調節器４に入力して設定温度信号と比
較し、その差信号をサイリスタ位相制御電力調整器５に
入力して全赤外線ランプ１への電力を調整することによ
り基板２の温度を一定に制御し、反応室内に反応ガスを
供給して基板２上に膜堆積する構成になっている。2. Description of the Related Art A conventional apparatus will be described with reference to FIG. 1. A plurality of infrared lamps 1 connected in parallel in a substrate heating chamber heat a substrate 2 placed on a susceptor 12 in a reaction chamber. , The substrate temperature signal detected by the substrate temperature measuring thermocouple 3 is input to the temperature controller 4 and compared with the set temperature signal, and the difference signal is input to the thyristor phase control power regulator 5 to input the all-infrared lamp 1. The temperature of the substrate 2 is controlled to be constant by adjusting the electric power to the substrate 2, and a reaction gas is supplied into the reaction chamber to deposit a film on the substrate 2.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記従
来例にあっては、並列配置され、かつ並列接続された多
数本の赤外線ランプ１の内、１本でも断線すると、基板
２の温度の均一性が悪くなり、膜堆積に悪影響を与え、
かつ赤外線ランプの断線を検出する検出器がないため、
赤外線ランプ断線の発見が遅れ、それだけ基板２の不良
を増大させるという課題がある。However, in the above-mentioned conventional example, even if one of the infrared lamps 1 arranged in parallel and connected in parallel is disconnected, the temperature uniformity of the substrate 2 becomes uniform. And adversely affect the film deposition,
And because there is no detector that detects the disconnection of the infrared lamp,
There is a problem that the discovery of the infrared lamp disconnection is delayed and the defects of the substrate 2 are increased accordingly.
【０００４】[0004]
【課題を解決するための手段】本発明装置は上記の課題
を解決するため、図１に示すように、並列配置され、か
つ並列接続された複数本の赤外線ランプ１により反応室
内の基板２を加熱し、基板測温素子３により検出された
基板温度信号を温度調節器４に入力して設定温度信号と
比較し、その差信号を電力調整器５に入力して全赤外線
ランプ１への電力を調整することにより基板２の温度を
一定に制御し、反応室内に反応ガスを供給して基板２上
に膜堆積するＣＶＤ装置において、全赤外線ランプ１へ
の電流Ｉを監視し、赤外線ランプの断線による該電流Ｉ
の減少を検出器６で検出させる構成とする。In order to solve the above-mentioned problems, the apparatus of the present invention, as shown in FIG. 1, arranges a substrate 2 in a reaction chamber by a plurality of infrared lamps 1 arranged in parallel and connected in parallel. The substrate temperature signal which is heated and detected by the substrate temperature measuring element 3 is input to the temperature controller 4 and compared with the set temperature signal, and the difference signal is input to the power controller 5 to supply power to the all-infrared lamp 1. In the CVD apparatus for controlling the temperature of the substrate 2 to be constant by supplying the reaction gas into the reaction chamber to deposit a film on the substrate 2 by monitoring the current I to the all-infrared lamp 1. The current I due to disconnection
The detector 6 detects the decrease of
【０００５】[0005]
【作 用】上記のように全赤外線ランプ１への電流Ｉを
検出器６により監視しているので、赤外線ランプ１が断
線すると、その断線したランプ本数に比例して電流Ｉが
減少し、この電流Ｉの減少が検出器６により検出され、
その検出出力により赤外線ランプ１が断線したことが判
ることになる。[Operation] Since the current I to the all-infrared lamp 1 is monitored by the detector 6 as described above, when the infrared lamp 1 is disconnected, the current I decreases in proportion to the number of the disconnected lamps. The decrease in the current I is detected by the detector 6,
The detection output shows that the infrared lamp 1 is broken.
【０００６】[0006]
【実施例】図１は本発明装置の１実施例における赤外線
ランプによる基板温度制御系と赤外線ランプの断線検出
系の１例の構成を示す接続図である。図１において、１
は基板加熱室にある、並列配置され、かつ並列接続され
た複数本の赤外線ランプ、２は反応室内のサセプタ１２
上に載置された基板である。1 is a connection diagram showing the construction of an example of a substrate temperature control system using an infrared lamp and a disconnection detection system for an infrared lamp in an embodiment of the present invention. In FIG. 1, 1
Is a plurality of infrared lamps arranged in parallel in the substrate heating chamber and connected in parallel, 2 is a susceptor 12 in the reaction chamber
It is a substrate placed on top.
【０００７】３は基板温度を測定する基板測温用熱電
対、４はこの熱電対３により検出された基板温度信号を
設定温度信号と比較し、その差信号を出力する温度調節
器、５はその差信号を入力して全赤外線ランプ１への電
力を調整し基板２の温度を一定に制御するサイリスタ位
相制御電力調整器、１３は電圧が２００Ｖの交流電源で
ある。Reference numeral 3 is a substrate temperature measuring thermocouple for measuring the substrate temperature, 4 is a temperature controller for comparing the substrate temperature signal detected by the thermocouple 3 with a set temperature signal and outputting the difference signal. A thyristor phase control power regulator that inputs the difference signal to regulate power to the all-infrared lamp 1 and controls the temperature of the substrate 2 to be constant, and 13 is an AC power source having a voltage of 200V.
【０００８】６は全赤外線ランプ１への電流Ｉを監視
し、赤外線ランプの断線による該電流Ｉの減少を検出す
る検出器である。この検出器６は、赤外線ランプ１の両
端電圧Ｅに比例した直流電圧を得る手段８と、全赤外線
ランプ１の電流Ｉに比例した直流電圧を得る手段９と、
手段８，９より得られる直流電圧をそれぞれ基準電圧Ｅ
s 及び入力電圧Ｅi として入力しその差電圧を出力する
比較増幅器１０と、入力電圧Ｅi が基準電圧ＥS より低
下した時の差電圧により作動する警報回路７の駆動回路
１１とよりなる。A detector 6 monitors the current I to the all-infrared lamp 1 and detects a decrease in the current I due to the disconnection of the infrared lamp. This detector 6 has means 8 for obtaining a DC voltage proportional to the voltage E across the infrared lamp 1, and means 9 for obtaining a DC voltage proportional to the current I of the all-infrared lamp 1.
The DC voltage obtained by the means 8 and 9 is the reference voltage E, respectively.
s and an input voltage E i , which is a comparison amplifier 10 which outputs a difference voltage between the input voltage E i and a drive circuit 11 of an alarm circuit 7 which operates by a difference voltage when the input voltage E i is lower than a reference voltage E S.
【０００９】赤外線ランプ１の両端電圧Ｅに比例した直
流電圧を得る手段８は、赤外線ランプ１の両端電圧Ｅを
分圧する抵抗Ｒ1 ，Ｒ2 と、分圧された交流電圧を直流
電圧に変換するダイオードＤ1 と、直流電圧を調整する
可変抵抗器ＲＶ1 と、平滑用キャパシタＣ1 とよりな
る。[0009] means 8 to obtain a DC voltage proportional to the voltage across E of the infrared lamp 1 conversion, a resistor R 1, R 2 for dividing the voltage across E of the infrared lamp 1, the divided AC voltage into a DC voltage a diode D 1 to a variable resistor RV 1 for adjusting the DC voltage, the more the smoothing capacitor C 1.
【００１０】全赤外線ランプ１の電流Ｉに比例した直流
電圧を得る手段９は、全赤外線ランプ１に流れる電流Ｉ
に比例した電流を取出す電流変成器ＣＴと、該電流の通
電により交流電圧を得る抵抗Ｒ3 と、該交流電圧を直流
電圧に変換するダイオードＤ2 と、直流電圧を調整する
可変抵抗器ＲＶ2 と、平滑キャパシタＣ2 とよりなる。The means 9 for obtaining a DC voltage proportional to the current I of the all-infrared lamp 1 is a current I flowing through the all-infrared lamp 1.
A current transformer CT for extracting a current proportional to the voltage, a resistor R 3 for obtaining an AC voltage by energizing the current, a diode D 2 for converting the AC voltage into a DC voltage, and a variable resistor RV 2 for adjusting the DC voltage. And a smoothing capacitor C 2 .
【００１１】警報回路７の駆動回路１１は、比較増幅器
１０の出力（入力電圧Ｅi が基準電圧ＥS より低下した
時の出力）によりオンになるトランジスタＴr と、この
トランジスタＴr のオンにより作動されその常開接点ｒ
ｓの閉により警報回路７を駆動するリレーＲy とよりな
る。駆動回路１１は、警報回路７を駆動する以外に成膜
システム停止回路を駆動してもよく、システム自体を直
接、停止することになるので、一層好ましい。[0011] The drive circuit 11 of the alarm circuit 7 comprises a transistor T r which is turned on by the (output when the input voltage E i becomes lower than the reference voltage E S) the output of the comparison amplifier 10, by turning on the transistor T r Activated and its normally open contact r
The relay R y drives the alarm circuit 7 by closing s. The drive circuit 11 may drive the film formation system stop circuit other than the alarm circuit 7 and directly stops the system itself, which is more preferable.
【００１２】上記の構成において本実施例の作用を説明
する。反応室内のサセプタ１２上に載置された基板２
は、交流電源１３により電力調整器５を介して電力を供
給された複数本の赤外線ランプ１により加熱される。基
板２の温度は、熱電対３により検出され、検出された基
板温度信号は温度調節器４に入力されて設定温度信号と
比較され、その差信号が電力調整器５に入力されて全赤
外線ランプ１への電力が調整されて基板２の温度が一定
に制御される。The operation of this embodiment having the above structure will be described. Substrate 2 placed on susceptor 12 in the reaction chamber
Is heated by the plurality of infrared lamps 1 which are supplied with power by the AC power supply 13 via the power regulator 5. The temperature of the substrate 2 is detected by the thermocouple 3, the detected substrate temperature signal is input to the temperature controller 4 and compared with the set temperature signal, and the difference signal is input to the power controller 5 to receive the all-infrared lamp. 1 is adjusted to control the temperature of the substrate 2 to be constant.
【００１３】この状態で反応室内に反応ガスを供給する
ことにより基板２上に膜堆積されることになる。全赤外
線ランプ１への電流Ｉは検出器６により監視されてお
り、全赤外線ランプ１が正常である場合は、全赤外線ラ
ンプ１に流れる電流Ｉは一定であり、基板２の温度が一
定に保たれるため、膜堆積が良好に行われ、基板２が不
良になることはない。By supplying a reaction gas into the reaction chamber in this state, a film is deposited on the substrate 2. The current I to the all-infrared lamp 1 is monitored by the detector 6, and when the all-infrared lamp 1 is normal, the current I flowing to the all-infrared lamp 1 is constant and the temperature of the substrate 2 is kept constant. Because of the sagging, the film is deposited well, and the substrate 2 does not become defective.
【００１４】赤外線ランプ１が断線すると、その断線し
たランプ本数に比例した電流Ｉが減少し、この電流Ｉの
減少が検出器６により検出され、その検出出力により赤
外線ランプ１が断線したことが判る。赤外線ランプ１が
５本並列使用の場合、仮に赤外線ランプ１が１本断線す
ると、４本並列接続の赤外線ランプに流れる電流Ｉ
4pは、下記（１）式から２０％減少する。When the infrared lamp 1 is burnt out, the current I proportional to the number of burnt out lamps is reduced, and the decrease in the current I is detected by the detector 6, and the detection output indicates that the infrared lamp 1 is burnt out. . If five infrared lamps 1 are used in parallel, and if one infrared lamp 1 is disconnected, the current I flowing through the four infrared lamps connected in parallel is I.
4p is reduced by 20% from the following equation (1).
【００１５】[0015]
【数１】 [Equation 1]
【００１６】但し、Ｒ5Pは５本並列接続の赤外線ランプ
の抵抗 Ｅは赤外線ランプの両端電圧 従って基準電圧Ｅs は入力電圧Ｅi を１とすると、０．
８×Ｅi となる。[0016] However, when R 5P resistance E of the infrared lamp five parallel-connected voltage across therefore the reference voltage E s of the infrared lamp and 1 input voltage E i, 0.
8 × E i .
【００１７】実際は赤外線ランプの両端電圧Ｅ＝２００
Ｖのとき、入力電圧Ｅi は可変抵抗器ＲＶ2 により＋５
Ｖに設定し、又基準電圧Ｅs は可変抵抗器ＲＶ1 により
−４．３Ｖに設定する。赤外線ランプ１が５本共正常な
ときは、比較増幅器１０に入力電圧Ｅi ＝＋５Ｖ，基準
電圧Ｅs ＝−４．３Ｖが入力し、比較増幅器１０の出力
はマイナス電圧であるので、トランジスタＴr はオンに
ならず、リレーＲy は作動せず、その常開接点ｒｓは開
状態のままであるため、警報回路７は作動しない。In practice, the voltage across the infrared lamp E = 200
When V, the input voltage E i is +5 due to the variable resistor RV 2.
V and the reference voltage E s is set to -4.3 V by the variable resistor RV 1 . When the five infrared lamps 1 are normal, the input voltage E i = + 5 V and the reference voltage E s = -4.3 V are input to the comparison amplifier 10, and the output of the comparison amplifier 10 is a negative voltage. The alarm circuit 7 does not operate because r does not turn on, the relay Ry does not operate, and its normally open contact rs remains open.
【００１８】赤外線ランプが１本断線すると、比較増幅
器１０の出力がプラス電圧となるので、トランジスタＴ
r がオンになり、リレーＲy が動作してその常開接点ｒ
ｓが閉じ、警報回路７が駆動されるため、ランプ点灯，
ブザー鳴動等により警報が発せられ、赤外線ランプ１が
断線したことが判る。この警報により速やかに成膜シス
テムを停止させることにより、基板２の不良を極力低減
することができる。又、警報回路７の代りに成膜システ
ム停止回路を駆動すれば、直ちに成膜工程を停止するこ
とができるので、基板２の不良率を最小限にとどめるこ
とができる。When one infrared lamp is burnt out, the output of the comparison amplifier 10 becomes a positive voltage, so that the transistor T
r is turned on, relay R y is activated and its normally open contact r
Since s is closed and the alarm circuit 7 is driven, the lamp is lit,
It is understood that the infrared lamp 1 was broken because an alarm was issued by a buzzer sounding. By promptly stopping the film forming system by this alarm, defects of the substrate 2 can be reduced as much as possible. Further, if the film formation system stop circuit is driven instead of the alarm circuit 7, the film formation process can be stopped immediately, so that the defective rate of the substrate 2 can be minimized.
【００１９】[0019]
【発明の効果】上述のように本発明によれば、並列配置
され、かつ並列接続された複数本の赤外線ランプ１によ
り反応室内の基板２を加熱し、基板測温素子３により検
出された基板温度信号を温度調節器４に入力して設定温
度信号と比較し、その差信号を電力調整器５に入力して
全赤外線ランプ１への電力を調整することにより基板２
の温度を一定に制御し、反応室内に反応ガスを供給して
基板２上に膜堆積するＣＶＤ装置において、全赤外線ラ
ンプ１への電流Ｉを監視し、赤外線ランプの断線による
該電流Ｉの減少を検出器６で検出させる構成とすること
により、赤外線ランプの断線を迅速に検知することがで
き、膜堆積への悪影響を速やかに回避して基板２の不良
を極力低減することができる。As described above, according to the present invention, the substrate 2 in the reaction chamber is heated by the plurality of infrared lamps 1 arranged in parallel and connected in parallel, and the substrate detected by the substrate temperature measuring element 3 is used. The temperature signal is input to the temperature controller 4 and compared with the set temperature signal, and the difference signal is input to the power controller 5 to adjust the power to the all-infrared lamp 1 so that the substrate 2
In a CVD apparatus for controlling the temperature of the substrate to be constant and supplying a reaction gas into the reaction chamber to deposit a film on the substrate 2, the current I to the all-infrared lamp 1 is monitored, and the current I is reduced due to disconnection of the infrared lamp By using the detector 6, the disconnection of the infrared lamp can be quickly detected, the adverse effect on the film deposition can be quickly avoided, and the defects of the substrate 2 can be reduced as much as possible.
【図１】本発明装置の１実施例における赤外線ランプに
よる基板温度制御系と赤外線ランプの断線検出系の１例
の構成を示す接続図である。FIG. 1 is a connection diagram showing a configuration of an example of a substrate temperature control system by an infrared lamp and a disconnection detection system of the infrared lamp in one embodiment of the device of the present invention.
１ 赤外線ランプ ２ 基板 ３ 基板測温素子（熱電対） ４ 温度調節器 ５ （サイリスタ位相制御）電力調整器 ６ 検出器 ７ 警報回路 ８ 手段 ９ 手段 １０ 比較増幅器 １１ 駆動回路 Ｉ 電流 1 Infrared Lamp 2 Substrate 3 Substrate Temperature Measuring Element (Thermocouple) 4 Temperature Controller 5 (Thyristor Phase Control) Power Regulator 6 Detector 7 Alarm Circuit 8 Means 9 Means 10 Comparative Amplifier 11 Drive Circuit I Current
Claims (2)
本の赤外線ランプ（１）により反応室内の基板（２）を
加熱し、基板測温素子（３）により検出された基板温度
信号を温度調節器（４）に入力して設定温度信号と比較
し、その差信号を電力調整器（５）に入力して全赤外線
ランプ（１）への電力を調整することにより基板（２）
の温度を一定に制御し、反応室内に反応ガスを供給して
基板（２）上に膜堆積するＣＶＤ装置において、全赤外
線ランプ（１）への電流（Ｉ）を監視し、赤外線ランプ
の断線による該電流（Ｉ）の減少を検出器（６）で検出
させる構成とすることを特徴とするＣＶＤ装置。1. A substrate temperature signal detected by a substrate temperature measuring element (3) is heated by heating a substrate (2) in a reaction chamber by a plurality of infrared lamps (1) arranged in parallel and connected in parallel. Substrate (2) by inputting to controller (4) and comparing with set temperature signal, and inputting the difference signal to power controller (5) to adjust power to all infrared lamp (1)
Of the infrared lamp (1) is monitored in a CVD apparatus in which the reaction gas is supplied into the reaction chamber to deposit a film on the substrate (2) by controlling the temperature of the A CVD apparatus characterized in that the detector (6) detects the decrease in the current (I) due to
両端電圧（Ｅ）に比例した直流電圧を得る手段（８）
と、全赤外線ランプ（１）の電流（Ｉ）に比例した直流
電圧を得る手段（９）と、手段（８，９）より得られる
直流電圧をそれぞれ基準電圧（Ｅs ）及び入力電圧（Ｅ
i ）として入力しその差電圧を出力する比較増幅器（１
０）と、入力電圧（Ｅi ）が基準電圧（Ｅs ）より低下
した時の差電圧により作動する成膜システム停止回路，
警報回路（７）等の駆動回路（１１）とよりなる請求項
１のＣＶＤ装置。2. The detector (6) means (8) for obtaining a DC voltage proportional to the voltage (E) across the infrared lamp (1).
A means (9) for obtaining a DC voltage proportional to the current (I) of the all-infrared lamp (1) and a DC voltage obtained by the means (8, 9) for a reference voltage (E s ) and an input voltage (E), respectively.
i ) and a comparison amplifier (1
0) and a film formation system stop circuit that operates by a difference voltage when the input voltage (E i ) falls below the reference voltage (E s ),
The CVD apparatus according to claim 1, comprising a drive circuit (11) such as an alarm circuit (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2621492A JPH05190472A (en) | 1992-01-17 | 1992-01-17 | Cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2621492A JPH05190472A (en) | 1992-01-17 | 1992-01-17 | Cvd apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05190472A true JPH05190472A (en) | 1993-07-30 |
Family
ID=12187173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2621492A Pending JPH05190472A (en) | 1992-01-17 | 1992-01-17 | Cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05190472A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999059196A1 (en) * | 1998-05-11 | 1999-11-18 | Semitool, Inc. | Temperature control system for a thermal reactor |
| NL1009838C2 (en) * | 1998-08-11 | 2000-02-15 | Fourtec B V | Baking machine for e.g. meat products, containing electric infra-red heaters and monitoring means for detecting broken heating element casings |
| WO2001058269A1 (en) * | 2000-02-10 | 2001-08-16 | Wegra Beheer B.V. | Baking apparatus and method for baking edible products |
| AU2006203146B2 (en) * | 2000-02-10 | 2009-07-02 | Wegra Beheer B.V. | Baking apparatus and method for baking edible products |
| JP2014060275A (en) * | 2012-09-18 | 2014-04-03 | Hitachi Kokusai Electric Inc | Heating device, substrate processing apparatus and semiconductor manufacturing method |
-
1992
- 1992-01-17 JP JP2621492A patent/JPH05190472A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999059196A1 (en) * | 1998-05-11 | 1999-11-18 | Semitool, Inc. | Temperature control system for a thermal reactor |
| NL1009838C2 (en) * | 1998-08-11 | 2000-02-15 | Fourtec B V | Baking machine for e.g. meat products, containing electric infra-red heaters and monitoring means for detecting broken heating element casings |
| WO2001058269A1 (en) * | 2000-02-10 | 2001-08-16 | Wegra Beheer B.V. | Baking apparatus and method for baking edible products |
| US7231871B1 (en) | 2000-02-10 | 2007-06-19 | Wegra Beheer B.V. | Baking apparatus and method for baking edible products |
| AU2006203146B2 (en) * | 2000-02-10 | 2009-07-02 | Wegra Beheer B.V. | Baking apparatus and method for baking edible products |
| US7897188B2 (en) | 2000-02-10 | 2011-03-01 | Wegra Beheer B.V. | Baking apparatus and method for baking edible products |
| JP2014060275A (en) * | 2012-09-18 | 2014-04-03 | Hitachi Kokusai Electric Inc | Heating device, substrate processing apparatus and semiconductor manufacturing method |
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