JPH05188083A - Variable electrostatic capacity type semiconductor acceleration sensor - Google Patents

Variable electrostatic capacity type semiconductor acceleration sensor

Info

Publication number
JPH05188083A
JPH05188083A JP4021945A JP2194592A JPH05188083A JP H05188083 A JPH05188083 A JP H05188083A JP 4021945 A JP4021945 A JP 4021945A JP 2194592 A JP2194592 A JP 2194592A JP H05188083 A JPH05188083 A JP H05188083A
Authority
JP
Japan
Prior art keywords
electrodes
circuit
sensor
acceleration sensor
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4021945A
Other languages
Japanese (ja)
Inventor
Keisuke Uno
圭輔 宇野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP4021945A priority Critical patent/JPH05188083A/en
Publication of JPH05188083A publication Critical patent/JPH05188083A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

PURPOSE:To enable the execution of constantly stable sensor action by detecting electrical attraction between a movable electrode and a fixed electrode with a detecting circuit, and earthing both electrodes with a switching circuit, thereby letting the charge of both electrodes escape to release them automatically. CONSTITUTION:An oscillating circuit 12 with a variable electrostatic capacity type acceleration sensor 11 integrated therein, a frequency divider 13 for dividing the oscillation frequency, and a first and a second transistor circuits Tr1, Tr2 for earthing a movable electrode and a fixed electrode in the sensor 11 to the ground 14 are controlled by a microcomputer 15. The computer 15 receives the input of oscillation frequency from the circuit 12 through the frequency divider 13, and judges the attracted state of the movable and fixed electrodes when this input is stopped. The computer 15 then turns on the circuits Tr1, Tr2 so as to let the charge of both electrodes escape to the ground 14, and thus both electrodes are separated from each other in an instant. Constantly stable sensor action can be thereby maintained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、自動車の加速度を検
出する場合や小型感震機器に使用されるような半導体加
速度センサに関し、さらに詳しくはセンサ感応部の維持
管理性能を高めた静電容量変化型の半導体加速度センサ
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration sensor used for detecting the acceleration of an automobile or for a small seismic device, and more particularly to an electrostatic capacitance having an improved maintenance performance of a sensor sensitive section. The present invention relates to a variable semiconductor acceleration sensor.

【0002】[0002]

【従来の技術】一般に、静電容量変化型の半導体加速度
センサは、図2に示すように、基板21の中央部に、重
り部22とその周囲の支持枠23とをエッチングにより
形成し、この重り部22を平行する一対の梁部24,2
4を介して片持ち状態に弾性支持して面方向に可動可能
に形成し、さらに図3に示すように、重り部22の可動
方向の一面に可動電極25を配設し、これと対向する基
板26上に固定電極27を対設させて加速度測定用の電
極部を構成している。
2. Description of the Related Art Generally, in a capacitance type semiconductor acceleration sensor, as shown in FIG. 2, a weight portion 22 and a supporting frame 23 around the weight portion 22 are formed in a central portion of a substrate 21 by etching. A pair of beam portions 24, 2 which are parallel to the weight portion 22.
4 is elastically supported in a cantilever state via 4 to be movable in the plane direction. Further, as shown in FIG. 3, a movable electrode 25 is disposed on one surface of the weight portion 22 in the movable direction, and faces the movable electrode 25. A fixed electrode 27 is provided on the substrate 26 to form an electrode portion for measuring acceleration.

【0003】このように構成した静電容量変化型の半導
体加速度センサ28は、加速が加わって重り部22が可
動したときの可動電極25と固定電極27間の静電容量
の変化を検知することにより、加わった加速度を求めて
いる。
The capacitance-changing type semiconductor acceleration sensor 28 having such a structure is capable of detecting a change in capacitance between the movable electrode 25 and the fixed electrode 27 when the weight portion 22 moves due to acceleration. Is used to calculate the applied acceleration.

【0004】この場合、上述の静電容量変化型の半導体
加速度センサ28で求めた静電容量の変化を発振周波数
として捉え、これを発振回路のコンデンサとして構成し
たセンサが知られている。
In this case, there is known a sensor in which a change in the capacitance obtained by the capacitance-changing type semiconductor acceleration sensor 28 described above is captured as an oscillation frequency, and is configured as a capacitor of an oscillation circuit.

【0005】[0005]

【発明が解決しようとする課題】しかし、この静電容量
の検出には、通常、静電容量を測定する電極部に電圧を
かけているが、この電圧のために数ミクロン隔てた電極
間で静電引力が発生して両電極が吸着動作しやすく、こ
の吸着現象発生時には重り部の動きが停止してセンサ動
作が停止する問題を有していた。
However, in order to detect this electrostatic capacitance, a voltage is usually applied to the electrode portion for measuring the electrostatic capacitance. However, because of this voltage, the electrodes are separated by several microns. There is a problem that electrostatic attraction is generated and both electrodes easily perform an adsorption operation, and when this adsorption phenomenon occurs, the movement of the weight portion stops and the sensor operation stops.

【0006】そこでこの発明は、センサ感応部の数ミク
ロン隔てた電極部で吸着現象が発生しても、直ちに離間
させて正常状態に戻すことができる静電容量変化型の半
導体加速度センサの提供を目的とする。
Therefore, the present invention provides a capacitance-changing type semiconductor acceleration sensor capable of immediately separating and returning to a normal state even if an adsorption phenomenon occurs in the electrode parts separated by several microns of the sensor sensitive part. To aim.

【0007】[0007]

【課題を解決するための手段】この発明は、可動電極と
固定電極との間の静電容量の変化を電気的に検出して加
速度を求める静電容量変化型の半導体加速度センサであ
って、前記可動電極と固定電極とのそれぞれをグランド
に接続するスイッチ回路と、前記可動電極と固定電極と
が電気的に吸着したことを検知する検知回路と、前記検
知回路が前記両電極の吸着を検知したとき、前記スイッ
チ回路をONして両電極をグランドに接続制御する制御
手段とを備えた静電容量変化型の半導体加速度センサで
あることを特徴とする。
SUMMARY OF THE INVENTION The present invention is a capacitance-changing type semiconductor acceleration sensor which obtains acceleration by electrically detecting a change in capacitance between a movable electrode and a fixed electrode. A switch circuit that connects each of the movable electrode and the fixed electrode to the ground, a detection circuit that detects that the movable electrode and the fixed electrode are electrically adsorbed, and the detection circuit detects the adsorption of both electrodes. In this case, the semiconductor acceleration sensor of the electrostatic capacitance change type is equipped with a control means for controlling the connection of both electrodes to the ground by turning on the switch circuit.

【0008】[0008]

【作用】この発明によれば、加速度測定時に静電引力に
より可動電極が固定電極に吸着して吸着現象が発生する
と、検知回路が電気的に吸着したことを検知して、該検
知回路からの検知データが制御手段に入力され、これに
基づいて制御手段が、スイッチ回路をONして両電極を
グランドに接続制御して、両電極にかかった電荷をグラ
ンドに逃がして両電極間を離間させる。
According to the present invention, when the movable electrode is attracted to the fixed electrode due to the electrostatic attractive force during the acceleration measurement to cause the adsorption phenomenon, the detection circuit detects that the electrode is electrically adsorbed, and The detection data is input to the control means, and based on this, the control means turns on the switch circuit to control the connection of both electrodes to the ground, allowing the electric charge applied to both electrodes to escape to the ground and separate the both electrodes. ..

【0009】[0009]

【発明の効果】このため、両電極に吸着現象が発生して
も、両電極を直ちに正常な離間状態に戻して自動復旧さ
せることができる。この結果、吸着した電極の離間動作
にいちいち人手を煩わすことがなくなり、自動的に復旧
させて常に信頼性の高い安定した最適なセンサ動作を維
持できる。
As a result, even if an adsorption phenomenon occurs on both electrodes, both electrodes can be immediately returned to the normal separated state and automatically restored. As a result, the separation operation of the adsorbed electrodes does not have to be troublesome, and the recovery operation is automatically performed, so that the reliable and stable optimum sensor operation can always be maintained.

【0010】[0010]

【実施例】この発明の一実施例を以下図面に基づいて詳
述する。図1は静電容量変化型の半導体加速度センサの
制御回路ブロック図を示し、これは静電容量変化型の半
導体加速度センサ11を組込んだ発振回路12と、この
発振回路12の発振周波数を分周処理する分周器13
と、センサ11の内部に設けられる可動電極と固定電極
とのそれぞれをグランド14に接続する第1トランジス
タ回路Tr1 および第2トランジスタ回路Tr2 と、こ
れら回路装置を制御管理するマイクロコンピュータ15
とから構成される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 1 shows a block diagram of a control circuit of a capacitance-changing type semiconductor acceleration sensor. This figure shows an oscillation circuit 12 incorporating a capacitance-changing type semiconductor acceleration sensor 11 and an oscillation frequency of this oscillation circuit 12. Frequency divider 13 for frequency processing
A first transistor circuit Tr1 and a second transistor circuit Tr2 which connect the movable electrode and the fixed electrode provided inside the sensor 11 to the ground 14, and a microcomputer 15 which controls and manages these circuit devices.
Composed of and.

【0011】上述の静電容量変化型の半導体加速度セン
サ11は、先の図2および図3で示した従来のセンサと
同様に構成され、加速が加わって重り部が可動したとき
の可動電極と固定電極間の静電容量の変化を検知するこ
とにより加速度を求めるものであって、このセンサ11
で求めた静電容量の変化を発振周波数として捉え、該セ
ンサ11を発振回路12のコンデンサとして構成してい
る。
The capacitance change type semiconductor acceleration sensor 11 described above is constructed in the same manner as the conventional sensor shown in FIGS. 2 and 3, and has a movable electrode when the weight portion moves due to acceleration. The sensor 11 calculates acceleration by detecting a change in electrostatic capacitance between fixed electrodes.
The sensor 11 is configured as a capacitor of the oscillation circuit 12 by catching the change in the capacitance obtained in step 1 as the oscillation frequency.

【0012】また、分周器13は、上述の発振回路12
で求められた発振周波数をマイクロコンピュータ15側
で識別可能な値に分周して、マイクロコンピュータ15
に出力する。
Further, the frequency divider 13 is the oscillator circuit 12 described above.
The oscillating frequency obtained in step 1 is divided into values that can be discriminated by the microcomputer 15, and the microcomputer 15
Output to.

【0013】上述のマイクロコンピュータ15は、可動
電極が固定電極に吸着した吸着現象を直ちに自動復旧さ
せる吸着解除機能を持たせており、このマイクロコンピ
ュータ15は分周器13を介して発振回路12からの発
振周波数を入力し、この発振周波数の入力が停止したと
き、センサ感応部としての可動電極が固定電極に電気的
に吸着して重り部の動きが停止した吸着現象の発生と判
定する。そして、この吸着現象の発生と判定したとき、
該マイクロコンピュータ15は第1トランジスタ回路T
r1 および第2トランジスタ回路Tr2 をONして、吸
着状態にある両電極の電荷を、両トランジスタ回路Tr
1 ,Tr2 を介してグランド14に逃がし、両電極を瞬
時に離間させる。また、このマイクロコンピュータ15
は、各回路装置毎の入出力データの誤差を記憶し、かつ
補正する。
The above-mentioned microcomputer 15 is provided with an adsorption releasing function for immediately and automatically recovering the adsorption phenomenon in which the movable electrode is adsorbed to the fixed electrode. This microcomputer 15 is supplied from the oscillation circuit 12 via the frequency divider 13. When the oscillation frequency is input and the input of the oscillation frequency is stopped, it is determined that the movable electrode serving as the sensor sensitive portion is electrically attracted to the fixed electrode and the movement of the weight portion is stopped, thereby causing an adsorption phenomenon. And when it is determined that this adsorption phenomenon occurs,
The microcomputer 15 includes a first transistor circuit T
By turning on r1 and the second transistor circuit Tr2, the charge of both electrodes in the adsorbed state is transferred to both transistor circuits Tr2.
It escapes to the ground 14 via 1 and Tr2 and instantly separates both electrodes. In addition, this microcomputer 15
Stores and corrects an error of input / output data for each circuit device.

【0014】このように構成された静電容量変化型の半
導体加速度センサ11は、通常、加速が加わって重り部
が可動したときの可動電極と固定電極間の静電容量の変
化が発振回路12より発振周波数として分周器13出力
され、ここで所定の値に分周された後、マイクロコンピ
ュータ15に入力され、該センサ11に加わった加速度
が求められている。
In the capacitance-changing type semiconductor acceleration sensor 11 constructed as above, the oscillation circuit 12 normally changes the capacitance between the movable electrode and the fixed electrode when the weight portion moves due to acceleration. The frequency is output from the frequency divider 13 as the oscillation frequency, is then divided into a predetermined value, and then is input to the microcomputer 15, and the acceleration applied to the sensor 11 is obtained.

【0015】この加速度測定時に、静電引力により可動
電極が不測に固定電極に吸着した吸着現象発生時には、
この吸着データに基づいてマイクロコンピュータ15が
第1トランジスタ回路Tr1 および第2トランジスタ回
路Tr2 をONして、吸着状態にある両電極の電荷をグ
ランド14に逃がし、センサ感応部としての両電極間を
元の正常な数ミクロンの離間状態に直ちに離間動作させ
る。そして、離間動作後はマイクロコンピュータ15が
両トランジスタ回路Tr1 ,Tr2 をOFFして、セン
サの重り部と一体の可動電極の動きを許容した発振動作
を再開させる。
At the time of this acceleration measurement, when an attraction phenomenon occurs in which the movable electrode unexpectedly attracts the fixed electrode due to electrostatic attraction,
Based on this adsorption data, the microcomputer 15 turns on the first transistor circuit Tr1 and the second transistor circuit Tr2 to release the electric charge of both electrodes in the adsorbed state to the ground 14, and to restore the space between both electrodes as the sensor sensitive section. Immediately, the separation operation is performed to the normal separation state of several microns. After the separating operation, the microcomputer 15 turns off both the transistor circuits Tr1 and Tr2 to restart the oscillation operation which allows the movement of the movable electrode integrated with the weight portion of the sensor.

【0016】上述のように、発振回路に組込まれるセン
サ内部の両電極に吸着現象が発生しても、両電極を直ち
に正常な離間状態に戻して自動復旧させることができ
る。この結果、吸着した電極の離間動作にいちいち人手
を煩わすことがなくなり、自動的に復旧させて常に最適
なセンサ動作を維持でき、信頼性の高い安定したセンサ
動作を実行する。
As described above, even if an adsorption phenomenon occurs on both electrodes inside the sensor incorporated in the oscillation circuit, both electrodes can be immediately returned to the normal separated state and automatically restored. As a result, the separating operation of the adsorbed electrodes does not have to be troublesome, and the sensor operation is automatically restored so that the optimum sensor operation can always be maintained, and reliable and stable sensor operation can be executed.

【0017】この発明と、上述の一実施例の構成との対
応において、この発明のスイッチ回路は、実施例の第1
トランジスタ回路Tr1 と、第2トランジスタ回路Tr
2 とに対応し、以下同様に、検知回路は、発振回路12
と、分周器13と、マイクロコンピュータ13とに対応
し、制御手段は、マイクロコンピュータ15に対応する
も、この発明は上述の一実施例の構成のみに限定される
ものではない。
In the correspondence between the present invention and the configuration of the above-described embodiment, the switch circuit of the present invention is the first embodiment of the present invention.
Transistor circuit Tr1 and second transistor circuit Tr
2 and so on. Similarly, the detection circuit is the oscillation circuit 12
, And the frequency divider 13 and the microcomputer 13, and the control means corresponds to the microcomputer 15, but the present invention is not limited to the configuration of the above-described embodiment.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の静電容量変化型の半導体加速度セン
サの制御回路ブロック図。
FIG. 1 is a block diagram of a control circuit of a capacitance change type semiconductor acceleration sensor according to the present invention.

【図2】従来の静電容量変化型の半導体加速度センサを
示す要部拡大斜視図。
FIG. 2 is an enlarged perspective view of a main part of a conventional electrostatic capacitance change type semiconductor acceleration sensor.

【図3】従来の静電容量変化型の半導体加速度センサを
示す要部縦断面図。
FIG. 3 is a vertical cross-sectional view of a main part showing a conventional capacitance change type semiconductor acceleration sensor.

【符号の説明】[Explanation of symbols]

11…静電容量変化型の半導体加速度センサ 12…発振回路 14…グランド 15…マイクロコンピュータ Tr1 ,Tr2 …トランジスタ回路 11 ... Capacitance change type semiconductor acceleration sensor 12 ... Oscillation circuit 14 ... Ground 15 ... Microcomputer Tr1, Tr2 ... Transistor circuit

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】可動電極と固定電極との間の静電容量の変
化を電気的に検出して加速度を求める静電容量変化型の
半導体加速度センサであって、前記可動電極と固定電極
とのそれぞれをグランドに接続するスイッチ回路と、前
記可動電極と固定電極とが電気的に吸着したことを検知
する検知回路と、前記検知回路が前記両電極の吸着を検
知したとき、前記スイッチ回路をONして両電極をグラ
ンドに接続制御する制御手段とを備えた静電容量変化型
の半導体加速度センサ。
1. A capacitance-changing type semiconductor acceleration sensor for electrically detecting a change in capacitance between a movable electrode and a fixed electrode to obtain an acceleration, wherein: A switch circuit that connects each to the ground, a detection circuit that detects that the movable electrode and the fixed electrode are electrically adsorbed, and a switch circuit that is turned on when the detection circuit detects the adsorption of both electrodes. Then, a capacitance change type semiconductor acceleration sensor having a control means for connecting and controlling both electrodes to the ground.
JP4021945A 1992-01-09 1992-01-09 Variable electrostatic capacity type semiconductor acceleration sensor Pending JPH05188083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4021945A JPH05188083A (en) 1992-01-09 1992-01-09 Variable electrostatic capacity type semiconductor acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4021945A JPH05188083A (en) 1992-01-09 1992-01-09 Variable electrostatic capacity type semiconductor acceleration sensor

Publications (1)

Publication Number Publication Date
JPH05188083A true JPH05188083A (en) 1993-07-27

Family

ID=12069197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4021945A Pending JPH05188083A (en) 1992-01-09 1992-01-09 Variable electrostatic capacity type semiconductor acceleration sensor

Country Status (1)

Country Link
JP (1) JPH05188083A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008196883A (en) * 2007-02-09 2008-08-28 Seiko Instruments Inc Dynamic quantity sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008196883A (en) * 2007-02-09 2008-08-28 Seiko Instruments Inc Dynamic quantity sensor

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