JPH05175518A - Pin diode - Google Patents
Pin diodeInfo
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- JPH05175518A JPH05175518A JP34453891A JP34453891A JPH05175518A JP H05175518 A JPH05175518 A JP H05175518A JP 34453891 A JP34453891 A JP 34453891A JP 34453891 A JP34453891 A JP 34453891A JP H05175518 A JPH05175518 A JP H05175518A
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- forward current
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- type region
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＰＩＮダイオードに係
り、順方向電流ＩF が大きくなるにつれて高比抵抗基板
の直列抵抗ｒSが小さくなるＰＩＮダイオードに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a PIN diode, and more particularly to a PIN diode in which the series resistance r S of a high specific resistance substrate decreases as the forward current I F increases.
【０００２】[0002]
【従来の技術】ＰＩＮダイオードは、高周波スイッチン
グ用途に好適な可変抵抗ダイオードで、順方向電流ＩF
が小さい時、直列抵抗ｒSが大きく、順方向電流ＩFが大
きい時、直列抵抗ｒS が小さく、逆バイアス時には、接
合容量が小さいという特徴を有する。この特性を利用し
て、ＶＨＦ帯、ＵＨＦ帯等において高周波スイッチ等に
広く利用されている。係るＰＩＮダイオードの構造およ
び製造方法は、例えば、特開平１−２６２６７１号公報
等に開示されており、その断面構造を図４および図５に
示す。2. Description of the Related Art A PIN diode is a variable resistance diode suitable for high frequency switching and has a forward current I F.
Is small, the series resistance r S is large, the forward current I F is large, the series resistance r S is small, and the reverse bias has a small junction capacitance. Utilizing this characteristic, it is widely used in high-frequency switches and the like in the VHF band, the UHF band and the like. The structure and manufacturing method of such a PIN diode are disclosed in, for example, Japanese Patent Laid-Open No. 1-262671, and the cross-sectional structure thereof is shown in FIGS. 4 and 5.
【０００３】図４は、従来のＰＩＮダイオード（ａ）の
断面図である。半導体高比抵抗基板５の表面には直径１
２０μφ程度のアルミ電極１がアノード電極として設け
られている。アルミ電極１は、ＳｉＯ2膜２の開口を介
して、直径１２０μφ、深さ１〜３μである高濃度Ｐ型
領域３に接触している。高比抵抗基板５は、Intrinsic
（Ｎ--）層であり比抵抗２０００Ω・cm、厚さ５０〜１
００μ程度である。高比抵抗基板５の下部には、Ｎ+ 型
層６が設けられており、図示しないカソード電極に接続
される。係るＰＩＮダイオードは、逆バイアス時には、
空乏層がＩ（Ｎ --）層全域に厚く広がるため耐圧が高く
接合容量は小さい。一方、順バイアス時には、両端の高
濃度不純物拡散領域からキャリアが注入されて、Ｉ（Ｎ
--）層に導電率変調を生ずるため、注入された電流に応
じて直列抵抗ｒS が大きく変化する。FIG. 4 shows a conventional PIN diode (a).
FIG. The diameter of the surface of the semiconductor high resistivity substrate 5 is 1
Aluminum electrode 1 of about 20μφ is provided as an anode electrode
Has been. Aluminum electrode 1 is SiO2Through the opening in the membrane 2
And high-concentration P type with a diameter of 120 μφ and a depth of 1 to 3 μ
It is in contact with region 3. High resistivity substrate 5 is Intrinsic
(N-) Layer with a specific resistance of 2000 Ω · cm and a thickness of 50 to 1
It is about 00μ. At the bottom of the high specific resistance substrate 5, N+ Type
Layer 6 is provided and connected to the cathode electrode (not shown)
To be done. When the PIN diode is reverse biased,
The depletion layer is I (N -) High breakdown voltage because it spreads thickly over the entire layer
The junction capacity is small. On the other hand, at the time of forward bias,
Carriers are injected from the concentration impurity diffusion region, and I (N
-) Layer causes conductivity modulation, so that it responds to the injected current.
And series resistance rS Changes greatly.
【０００４】図５は、従来のＰＩＮダイオード（ｂ）の
断面図である。図４に示す従来のＰＩＮダイオード
（ａ）と高濃度Ｐ型領域３の直径の大きさが約３倍程度
大きく、直径約３００μφである。この点を除いて図４
に示すＰＩＮダイオード（ａ）の構造と同じである。FIG. 5 is a sectional view of a conventional PIN diode (b). The diameter of the conventional PIN diode (a) and the high concentration P-type region 3 shown in FIG. 4 is about three times as large as about 300 μφ in diameter. Figure 4 except this point
It has the same structure as the PIN diode (a) shown in FIG.
【０００５】図６は、ｒS−ＩF特性の説明図である。
（ａ）は、図４に示す高濃度Ｐ型領域３の直径が小さな
１２０μφ程度のＰＩＮダイオード（ａ）であり、
（ｂ）は、図５に示す高濃度Ｐ型領域３の直径が大きな
３００μφ程度のＰＩＮダイオード（ｂ）の特性を示
す。直列抵抗（ｒS）−順方向電流（ＩF）特性は、図示
するように順方向電流ＩFが大きくなることによって、
直列抵抗ｒSは例えばＰＩＮダイオード（ａ）において
はＩFが１０μＡの時、１ｋΩ、ＩFが１０ｍＡの時、数
Ωまで大きく変化する。高濃度Ｐ型領域３の面積がＰＩ
Ｎダイオード（ａ）よりも約１桁大きなＰＩＮダイオー
ド（ｂ）においては、同様な範囲で順方向電流ＩFを変
化させた時に、直列抵抗ｒS は同様な比率で変化する、
即ち、ＩFが１０μＡの時、数百Ω、ＩFが１０ｍＡの時
１Ω程度である。従って、ＰＩＮダイオード（ｂ）は順
方向電流ＩFを大きくした時には、より小さな直列抵抗
ｒSが得られるが、順方向電流ＩFが小さな時には、直列
抵抗ｒSも同様な比率で小さくなってしまう。FIG. 6 is an explanatory diagram of the r S -I F characteristic.
(A) is a PIN diode (a) with a diameter of the high concentration P-type region 3 shown in FIG.
FIG. 5B shows the characteristics of the PIN diode (b) with a diameter of the high concentration P-type region 3 shown in FIG. Series resistance (r S) - the forward current (I F) characteristics, by the forward current I F increases as shown,
When the series resistance r S I F is the example PIN diode (a) is 10 .mu.A, 1 k [Omega, when I F is 10 mA, largely changes to several Omega. The area of the high concentration P-type region 3 is PI
In the PIN diode (b) which is approximately one digit larger than the N diode (a), when the forward current I F is changed in the same range, the series resistance r S changes at the same ratio.
That is, it is several hundred Ω when I F is 10 μA, and about 1 Ω when I F is 10 mA. Thus, PIN diode (b) is when increasing the forward current I F is smaller series resistance r S is obtained, when the forward current I F is small, also the series resistance r S becomes small in the same proportions I will end up.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、近年Ｐ
ＩＮダイオードの応用機器が広がり、低消費電力化が進
む中で、順方向電流ＩFが大きい時に直列抵抗ｒSはＰＩ
Ｎダイオード（ｂ）並に小さくなり、順方向電流ＩFが
小さな時には、直列抵抗ｒSはＰＩＮダイオード（ａ）
並に大きくなるＰＩＮダイオードの出現が望まれる。す
なわち順方向電流Ｉ F が小さい時、直列抵抗ｒSが大き
く、順方向電流ＩFが大きくなるにつれて、より小さな
順方向電流ＩFで直列抵抗ｒS を十分に小さくすること
ができれば、より低消費電力で高周波のスイッチングを
することができる。本発明は係るＰＩＮダイオードを提
供しよとするものである。However, in recent years, P
Expanded application equipment of IN diodes and advanced power consumption reduction
In the middle, the forward current IFIs large, the series resistance rSIs PI
N diode (b) as small as the forward current IFBut
When small, series resistance rSIs a PIN diode (a)
The advent of PIN diodes that are relatively large is desired. You
That is, forward current I F Is small, series resistance rSIs large
Forward current IFBecomes larger, the smaller
Forward current IFAnd series resistance rS Be small enough
If it is possible to achieve high-frequency switching with lower power consumption
can do. The present invention provides such a PIN diode.
It is something to offer.
【０００７】[0007]
【課題を解決するための手段】本発明のＰＩＮダイオー
ドは、半導体高比抵抗基板表面の一導電型不純物拡散領
域内に、反対導電型の環状の不純物拡散領域を設け、更
に環状の不純物拡散領域は順方向電流の通り道である切
欠きを具備することを特徴とする。In a PIN diode of the present invention, an opposite conductivity type annular impurity diffusion region is provided in one conductivity type impurity diffusion region of the surface of a semiconductor high specific resistance substrate, and further an annular impurity diffusion region is provided. Is provided with a notch which is a path of forward current.
【０００８】[0008]
【作用】半導体高比抵抗基板表面の一導電型高濃度不純
物領域内に、反対導電型の環状の高濃度不純物領域を設
けることにより、順方向電流ＩF が小さい時には、反対
導電型の環状の高濃度不純物領域の内側の高濃度不純物
領域より、順方向電流が高比抵抗基板に流れ、ＰＩＮダ
イオード（ａ）並の大きな直列抵抗ｒSが得られる。ま
た順方向電流ＩFが大きくなると、反対導電型の環状の
不純物高濃度領域の外側に順方向電流ＩFの通路が広が
り、ＰＩＮダイオード（ｂ）並の小さな直列抵抗ｒS が
得られる。従って、従来のＰＩＮダイオードと比較し
て、順方向電流ＩF が小さい時、直列抵抗ｒs はより大
きくなり、順方向電流ＩFが大きい時、直列抵抗ｒSはよ
り小さくなる。これによりより小さな順方向電流Ｉ
Fで、十分小さな直列抵抗ｒSが得られ、より低消費電力
で高周波のスイッチングを行うことのできるＰＩＮダイ
オードが実現される。By providing a ring-shaped high-concentration impurity region of the opposite conductivity type in one conductivity-type high-concentration impurity region of the semiconductor high-resistivity substrate surface, when the forward current I F is small, the ring of the opposite conductivity type is formed. A forward current flows from the high-concentration impurity region inside the high-concentration impurity region to the high-resistivity substrate, and a large series resistance r S equivalent to that of the PIN diode (a) is obtained. Further, when the forward current I F becomes large, the path of the forward current I F spreads outside the opposite conductivity type annular high impurity concentration region, and a series resistance r S as small as the PIN diode (b) is obtained. Therefore, as compared with the conventional PIN diode, when a forward current I F is small, the series resistance r s becomes larger, when the forward current I F increases, the series resistance r S becomes smaller. This results in a smaller forward current I
At F , a sufficiently small series resistance r S is obtained, and a PIN diode capable of high-frequency switching with lower power consumption is realized.
【０００９】[0009]
【実施例】図１は、本発明の一実施例のＰＩＮダイオー
ド（ｃ）の断面図である。比抵抗２０００Ω・cm程度の
Ｉ（Ｎ--）層である半導体高比抵抗基板は、その表面に
高不純物濃度のＰ型領域１３を具備している基本的な構
造は従来の技術と同様である。高濃度Ｐ型領域１３に
は、反対導電型である高濃度Ｎ型の環状の不純物領域１
４が設けられている。環状の高濃度Ｎ型領域１４の内側
の直径は、図４に示す従来のＰＩＮダイオード（ａ）の
高濃度Ｐ型領域３の直径と等しい１２０μφ程度であ
る。高濃度Ｐ型領域１３の外径は、従来の技術に示すＰ
ＩＮダイオード（ｂ）のＰ型領域３の直径と等しく３０
０μφである。なお拡散層の深さは、高濃度Ｐ型領域１
３は３μｍであり、高濃度Ｎ型領域１４は２μｍ程度で
ある。1 is a sectional view of a PIN diode (c) according to an embodiment of the present invention. Resistivity 2000 [Omega · cm of about I (N -) semiconductor high resistivity substrate is layer basic structure which comprises a P-type region 13 of high impurity concentration on the surface is the same as that of the conventional art is there. The high-concentration P-type region 13 has a high-concentration N-type annular impurity region 1 of opposite conductivity type.
4 are provided. The inner diameter of the annular high-concentration N-type region 14 is approximately 120 μφ, which is equal to the diameter of the high-concentration P-type region 3 of the conventional PIN diode (a) shown in FIG. The outer diameter of the high-concentration P-type region 13 is P as shown in the prior art.
Equal to the diameter of the P-type region 3 of the IN diode (b) 30
It is 0 μφ. The depth of the diffusion layer is the high concentration P-type region 1
3 is 3 μm, and the high concentration N-type region 14 is about 2 μm.
【００１０】図２は、本発明の一実施例のＰＩＮダイオ
ード（ｃ）のパターン図である。高濃度Ｐ型領域１３に
は図示するように、環状の高濃度Ｎ型領域１４が設けら
れており、高濃度Ｎ型領域１４は、ダイオード順方向電
流の通り道である高濃度Ｐ型領域の切欠き１５を具備す
る。環状の高濃度Ｎ型領域１４の幅は１５μｍであり、
切欠き１５の電流の通り道となる幅は同様に１５μｍで
ある。FIG. 2 is a pattern diagram of a PIN diode (c) according to an embodiment of the present invention. As shown in the figure, the high-concentration P-type region 13 is provided with a ring-shaped high-concentration N-type region 14, and the high-concentration N-type region 14 cuts off the high-concentration P-type region which is a path of the diode forward current. A notch 15 is provided. The width of the annular high-concentration N-type region 14 is 15 μm,
Similarly, the width of the cutout 15 through which the current flows is 15 μm.
【００１１】係る構造の高濃度Ｐ型領域１３において
は、順方向電流ＩF が小さい時には、順方向電流Ｉ
Fは、環状の高濃度Ｎ型領域１４の内側の高濃度Ｐ型領
域１３に電流が流れ、あたかも従来技術のＰＩＮダイオ
ード（ａ）の高濃度Ｐ型領域１３のように機能する。そ
して順方向電流ＩFが大きくなると、順方向電流ＩFは切
欠き１５および環状の高濃度Ｎ型領域１４の下を通っ
て、高濃度Ｐ型領域１３の全面に広がり、高濃度Ｐ型領
域１３は、あたかも従来技術のＰＩＮダイオード（ｂ）
の高濃度Ｐ型領域４として機能する。ここで切欠き１５
は、順方向電流ＩF が大きくなった時に、高比抵抗基板
５へ順方向電流ＩFを高濃度Ｐ型領域１３の全面より流
すための電流の通路としての役割を果たす。即ち、環状
の高濃度Ｎ型領域１４のみでは、高濃度Ｎ型領域１４の
拡散深さのばらつき等により、順方向電流ＩFの高濃度
Ｐ型領域１３内の分布が大きく変動するが、切欠き１５
を設けることによって、パターン上で平面的に電流の通
り道が作られ、電流を高濃度Ｐ型領域１３の全面に安定
に分布させることができる。In the high-concentration P-type region 13 having such a structure, when the forward current I F is small, the forward current I F
The current flows through the high concentration P-type region 13 inside the ring-shaped high concentration N-type region 14, and F functions as if it were the high concentration P-type region 13 of the PIN diode (a) of the prior art. Then, when the forward current I F increases, the forward current I F passes under the notch 15 and the annular high-concentration N-type region 14 and spreads over the entire surface of the high-concentration P-type region 13 to form the high-concentration P-type region. 13 is as if it were a conventional PIN diode (b).
Function as the high-concentration P-type region 4. Cutout 15 here
Plays a role of a current path for allowing the forward current I F to flow from the entire surface of the high concentration P-type region 13 to the high specific resistance substrate 5 when the forward current I F becomes large. That is, in the annular high-concentration N-type region 14 alone, the distribution of the forward current I F in the high-concentration P-type region 13 varies greatly due to variations in the diffusion depth of the high-concentration N-type region 14, etc. Lack 15
By providing, a current path is formed in a plane on the pattern, and the current can be stably distributed over the entire surface of the high concentration P-type region 13.
【００１２】図３は本発明の一実施例のＰＩＮダイオー
ドのｒS−ＩF特性の説明図である。本発明の一実施例の
ＰＩＮダイオード（ｃ）においては、順方向電流ＩF が
１０μＡの時は、直列抵抗（ｒS）は１ｋΩ程度とな
り、高濃度Ｐ型領域面積小のＰＩＮダイオード（ａ）並
の特性が得られる。順方向電流ＩFが１０ｍＡの時は、
直列抵抗（ｒS）は、１Ω程度となり、高濃度Ｐ型領域
面積大のＰＩＮダイオード（ｂ）並の特性が得られる。
又、順方向電流ＩFが１ｍＡ程度で直列抵抗（ｒS）は、
１０Ω程度と小さくできる。即ち、従来の技術のＰＩＮ
ダイオード（ａ）の場合であると、直列抵抗（ｒS）１
０Ω程度を得るためには、順方向電流ＩFは１０ｍＡ程
度必要であったが、これを１桁程度小さくすることがで
きる。従って高周波スイッチングに用いて、ＰＩＮダイ
オードの低消費電力化を達成することが可能となる。FIG. 3 is an explanatory diagram of the r S -I F characteristic of the PIN diode according to the embodiment of the present invention. In the PIN diode (c) of one embodiment of the present invention, when the forward current I F is 10 μA, the series resistance (r S ) is about 1 kΩ, and the PIN diode (a) having a high concentration P-type region area is small. Average characteristics can be obtained. When the forward current I F is 10 mA,
The series resistance (r S ) is about 1Ω, and the characteristics are similar to those of the PIN diode (b) having a large high-concentration P-type region area.
Further, when the forward current I F is about 1 mA, the series resistance (r S ) is
It can be reduced to about 10Ω. That is, the conventional PIN
In the case of the diode (a), the series resistance (r S ) 1
In order to obtain about 0Ω, the forward current I F required about 10 mA, but this can be reduced by about one digit. Therefore, it is possible to achieve low power consumption of the PIN diode by using it for high frequency switching.
【００１３】尚、本発明の一実施例のＰＩＮダイオード
（ｃ）は、特開平１−２２６２６７１号公報等に開示さ
れたＰＩＮダイオードの製造方法に、切欠き１５を具備
する環状の高濃度Ｎ型領域１４を設ける工程を追加する
ことによって、極めて容易に製造することができる。The PIN diode (c) according to one embodiment of the present invention is the same as the PIN diode manufacturing method disclosed in Japanese Unexamined Patent Publication No. 1-2226671, which has a ring-shaped high-concentration N type having a notch 15. It can be manufactured extremely easily by adding the step of providing the region 14.
【００１４】[0014]
【発明の効果】以上に説明したように、本発明はＰＩＮ
ダイオードの半導体高比抵抗基板表面の一導電型の高濃
度領域内に反対導電型の環状の高濃度領域を設け、更に
環状の反対導電型の高濃度領域には切欠きを設けたもの
である。従って、順方向電流が小さい時には、反対導電
型の環状の高濃度領域内部の領域のみが高濃度領域とし
て機能し、大きな直列抵抗を与え、順方向電流ＩF が大
きくなると、反対導電型の高濃度領域の切欠きがダイオ
ード順方向電流の通り道となり、高濃度領域全域が機能
し直列抵抗ｒS を小さくする。従ってより低消費電力で
高周波のスイッチングを行うことのできるＰＩＮダイオ
ードが実現され、ＰＩＮダイオードの応用分野がより拡
大される。As described above, the present invention is based on PIN.
A semiconductor high specific resistance substrate surface of a diode is provided with an annular high-concentration region of the opposite conductivity type in a high-concentration region of one conductivity type, and a notch is provided in the high-concentration region of an annular opposite conductivity type. .. Therefore, when the forward current is small, only the region inside the annular high-concentration region of the opposite conductivity type functions as the high-concentration region, which gives a large series resistance, and when the forward current I F becomes large, the opposite conductivity type becomes high. The notch in the concentration region serves as a path for the diode forward current, and the entire high concentration region functions to reduce the series resistance r S. Therefore, a PIN diode capable of high-frequency switching with lower power consumption is realized, and the application field of the PIN diode is further expanded.
【図１】本発明の一実施例のＰＩＮダイオードの断面
図。FIG. 1 is a sectional view of a PIN diode according to an embodiment of the present invention.
【図２】本発明の一実施例のＰＩＮダイオードのパター
ン図。FIG. 2 is a pattern diagram of a PIN diode according to an embodiment of the present invention.
【図３】本発明の一実施例のＰＩＮダイオードのｒS−
ＩF特性の説明図。FIG. 3 shows the PIN diode r S − of one embodiment of the present invention.
Explanatory drawing of I F characteristic.
【図４】従来のＰＩＮダイオード（ａ）の断面図。FIG. 4 is a sectional view of a conventional PIN diode (a).
【図５】従来のＰＩＮダイオード（ｂ）の断面図。FIG. 5 is a sectional view of a conventional PIN diode (b).
【図６】従来のＰＩＮダイオードのｒS−ＩF特性の説明
図。FIG. 6 is an explanatory diagram of r S -I F characteristics of a conventional PIN diode.
Claims (2)
物拡散領域内に、反対導電型の環状の不純物拡散領域を
設けたことを特徴とするＰＩＮダイオード。1. A PIN diode characterized in that an annular impurity diffusion region of opposite conductivity type is provided in one conductivity type impurity diffusion region of the surface of a semiconductor high resistivity substrate.
は、ダイオード順方向電流の通り道である前記一導電型
の不純物拡散領域である切欠きを具備することを特徴と
する請求項１のＰＩＮダイオード。2. The PIN of claim 1, wherein the opposite conductivity type annular impurity diffusion region comprises a notch that is the one conductivity type impurity diffusion region that is a path for a diode forward current. diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34453891A JPH05175518A (en) | 1991-12-26 | 1991-12-26 | Pin diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34453891A JPH05175518A (en) | 1991-12-26 | 1991-12-26 | Pin diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175518A true JPH05175518A (en) | 1993-07-13 |
Family
ID=18370054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34453891A Pending JPH05175518A (en) | 1991-12-26 | 1991-12-26 | Pin diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175518A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007207875A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | Silicon wafer and manufacturing method thereof |
| JP2007207876A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | High-frequency diode and manufacturing method thereof |
-
1991
- 1991-12-26 JP JP34453891A patent/JPH05175518A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007207875A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | Silicon wafer and manufacturing method thereof |
| JP2007207876A (en) * | 2006-01-31 | 2007-08-16 | Sumco Corp | High-frequency diode and manufacturing method thereof |
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