JPH05175254A - Low melting point bonding composition - Google Patents
Low melting point bonding compositionInfo
- Publication number
- JPH05175254A JPH05175254A JP35597591A JP35597591A JPH05175254A JP H05175254 A JPH05175254 A JP H05175254A JP 35597591 A JP35597591 A JP 35597591A JP 35597591 A JP35597591 A JP 35597591A JP H05175254 A JPH05175254 A JP H05175254A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- low melting
- glass
- silver
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、低融点接着組成物に関
し、より具体的には、半導体チップをアルミナパッケー
ジ基板に接着するのに好適な低融点接着組成物に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low melting point adhesive composition, and more particularly to a low melting point adhesive composition suitable for adhering a semiconductor chip to an alumina package substrate.
【０００２】[0002]
【従来の技術】従来より半導体チップをアルミナパッケ
ージ基板に接着するための材料として、ガラス粉末を用
いた低融点接着組成物が使用されている。2. Description of the Related Art Conventionally, a low melting point adhesive composition using glass powder has been used as a material for adhering a semiconductor chip to an alumina package substrate.
【０００３】このような用途の低融点接着組成物には、
接着時に半導体チップの特性を劣化させないために、で
きるだけ低温での接着が可能であること、半導体とアル
ミナパッケージ基板との間に電気導通性を与え、且つ、
半導体チップに発生した熱を基板側に逃がすために、高
い電気伝導性と熱伝導性を有することが要求される。The low melting point adhesive composition for such use includes:
In order not to deteriorate the characteristics of the semiconductor chip at the time of bonding, it is possible to bond at a temperature as low as possible, and to provide electrical conductivity between the semiconductor and the alumina package substrate, and
In order to release the heat generated in the semiconductor chip to the substrate side, it is required to have high electrical conductivity and thermal conductivity.
【０００４】またこの種の低融点接着組成物は、３０〜
２００℃において約１７０×１０-7／℃の熱膨張係数を
有するため、約４０×１０-7／℃の熱膨張係数を有する
半導体チップや約７０×１０-7／℃の熱膨張係数を有す
るアルミナパッケージ基板との間に熱膨張係数の差に起
因する応力が発生しやすいが、低融点接着組成物には、
このような応力を吸収することも要求される。Further, a low melting point adhesive composition of this type has a composition of 30 to
Since it has a coefficient of thermal expansion of about 170 × 10 −7 / ° C. at 200 ° C., it has a semiconductor chip having a coefficient of thermal expansion of about 40 × 10 −7 / ° C. or a coefficient of thermal expansion of about 70 × 10 −7 / ° C. Although stress due to the difference in thermal expansion coefficient between the alumina package substrate is likely to occur, the low melting point adhesive composition,
It is also required to absorb such stress.
【０００５】そのためこの種の低融点接着組成物として
は、比較的低温での接着が可能なＰｂＯ−Ｂ2 Ｏ3 系ガ
ラスに対し、銀粉末や銀フレークを添加したものが広く
用いられている。この銀粉末や銀フレークは、接着組成
物に高い電気伝導性と熱伝導性を付与すると共に、低融
点接着組成物と、半導体チップやアルミナパッケージ基
板との間に発生する応力を吸収する特性を有するもので
ある。Therefore, as the low melting point adhesive composition of this type, a PbO-B 2 O 3 glass capable of being bonded at a relatively low temperature, to which silver powder or silver flakes is added is widely used. .. The silver powder and the silver flakes impart high electrical conductivity and thermal conductivity to the adhesive composition, and also have a property of absorbing stress generated between the low melting point adhesive composition and the semiconductor chip or the alumina package substrate. I have.
【０００６】[0006]
【発明が解決しようとする課題】しかしながらＰｂＯ−
Ｂ2 Ｏ3 系ガラスを用いた低融点接着組成物は、融点が
十分に低下せず、４００℃以下の温度で接着することが
困難であるため、近年開発されつつある集積度の高いＬ
ＳＩ等の熱に極めて敏感な半導体チップをアルミナパッ
ケージ基板に接着するのに使用すると、半導体チップの
特性が劣化する恐れがある。However, PbO-
The low melting point adhesive composition using B 2 O 3 glass does not have a sufficiently low melting point and is difficult to bond at a temperature of 400 ° C. or less, and thus L having a high degree of integration, which is being developed in recent years,
If a semiconductor chip that is extremely sensitive to heat such as SI is used for bonding to an alumina package substrate, the characteristics of the semiconductor chip may deteriorate.
【０００７】本発明の目的は、半導体チップをアルミナ
パッケージ基板に接着する材料に要求される全ての特性
を満足し、特に３８０℃以下で接着可能な低融点接着組
成物を提供することである。An object of the present invention is to provide a low melting point adhesive composition which satisfies all the properties required for a material for adhering a semiconductor chip to an alumina package substrate and can be adhered particularly at 380 ° C. or lower.
【０００８】[0008]
【課題を解決するための手段】本発明者は、上記目的を
達成すべく、数々の研究を重ねた結果、ＴｅＯ2 −Ｖ2
Ｏ5 −ＰｂＯ−Ａｇ2 Ｏ系ガラスのガラス転移点が非常
に低く、しかも結晶化傾向が少なく、この系のガラスの
各構成成分を所定の割合で含有させることによって、３
８０℃以下で接着できる低融点接着組成物を得られるこ
とを見いだし、本発明として提案するものである。Means for Solving the Problems The present inventor has conducted a number of studies in order to achieve the above object, and as a result, TeO 2 --V 2
The glass transition point of O 5 -PbO-Ag 2 O based glass is very low, and the crystallization tendency is low. By incorporating each constituent component of the glass of this system in a predetermined ratio, 3
It was found that a low melting point adhesive composition capable of adhering at 80 ° C. or lower can be obtained, and is proposed as the present invention.
【０００９】すなわち本発明の低融点封着組成物は、重
量百分率で、ＴｅＯ2 １５〜３４％、Ｖ2 Ｏ5 １５
〜４５％、ＰｂＯ ５〜３５％、Ａｇ2 Ｏ ５〜４０％
の組成を有するガラス粉末１５〜６０体積％と、銀粉末
および／又は銀フレーク４０〜８５体積％からなること
を特徴とする。That is, the low melting point sealing composition of the present invention has a weight percentage of TeO 2 of 15 to 34% and V 2 O 5 of 15.
~45%, PbO 5~35%, Ag 2 O 5~40%
15 to 60% by volume of glass powder having the composition of, and 40 to 85% by volume of silver powder and / or silver flakes.
【００１０】[0010]
【作用】本発明の低融点封着組成物において、ガラス粉
末の組成を上記のように限定した理由は、以下のとおり
である。The reason for limiting the composition of the glass powder in the low melting point sealing composition of the present invention as described above is as follows.
【００１１】ＴｅＯ2 は、本発明のガラスの骨格を形成
する成分であり、その含有量は、１５〜３４％である。
１５％より少ない場合は、ガラスが失透しやすいため、
安定なガラスが得られない。一方、３４％より多い場合
は、ガラスの熱膨張係数が著しく大きくなり、低融点接
着組成物と、半導体チップやアルミナパッケージ基板と
の間に発生する応力が大きくなるため好ましくない。TeO 2 is a component forming the skeleton of the glass of the present invention, and its content is 15 to 34%.
If it is less than 15%, the glass tends to devitrify,
Stable glass cannot be obtained. On the other hand, if it is more than 34%, the coefficient of thermal expansion of the glass becomes remarkably large, and the stress generated between the low melting point adhesive composition and the semiconductor chip or the alumina package substrate becomes large, which is not preferable.
【００１２】Ｖ2 Ｏ5 も、本発明のガラスの骨格を形成
する成分であり、その含有量は、１５〜４５％である。
この含有範囲をはずれる場合は、ガラスの結晶化傾向が
著しくなり、良好な封着ができなくなる。V 2 O 5 is also a component forming the skeleton of the glass of the present invention, and its content is 15 to 45%.
If the content is out of this range, the crystallization tendency of glass becomes remarkable, and good sealing cannot be achieved.
【００１３】ＰｂＯは、ガラスを低融点化する成分であ
り、その含有量は、５〜３５％である。５％より少ない
場合は、封着時にガラスが結晶化を起こして流動し難く
なり、結晶化傾向が大きくなる。一方、３５％より多い
場合は、ガラスの粘度が高くなって、十分に流動しな
い。PbO is a component that lowers the melting point of glass, and its content is 5 to 35%. If it is less than 5%, the glass will be crystallized during sealing and it will be difficult for it to flow, and the crystallization tendency will be large. On the other hand, when it is more than 35%, the viscosity of the glass becomes high and the glass does not flow sufficiently.
【００１４】Ａｇ2 Ｏも、ガラスを低融点化する成分で
あり、その含有量は、５〜４０％である。５％より少な
い場合は、ガラスの粘度が高くなって、十分に流動しな
い。一方、４０％より多い場合は、ガラスの熱膨張係数
が大きくなりすぎる。Ag 2 O is also a component that lowers the melting point of glass, and its content is 5 to 40%. When it is less than 5%, the viscosity of the glass becomes high and the glass does not flow sufficiently. On the other hand, when it is more than 40%, the thermal expansion coefficient of the glass becomes too large.
【００１５】尚、本発明においては、特性を損なわない
範囲で、上記成分以外にも、ＺｎＯ、Ｂｉ2 Ｏ3 、Ｃｕ
2 Ｏ、Ａｌ2 Ｏ3 、ＳｉＯ2 、Ｂ2 Ｏ3 、ＷＯ3 、Ｍｏ
Ｏ3、Ｎｂ2 Ｏ5 、ＳｒＯ、ＢａＯ、Ｃｓ2 Ｏの１者あ
るいは２者以上を選択して、１０％まで含有させること
が可能である。In the present invention, in addition to the above components, ZnO, Bi 2 O 3 and Cu may be used as long as the characteristics are not impaired.
2 O, Al 2 O 3 , SiO 2 , B 2 O 3 , WO 3 , Mo
One or two or more of O 3 , Nb 2 O 5 , SrO, BaO, and Cs 2 O can be selected and contained up to 10%.
【００１６】また本発明においては、上記ガラス粉末に
銀粉末および／又は銀フレークを混合し、さらに有機溶
剤と混合することによって、ペースト状にして使用す
る。In the present invention, the glass powder is mixed with silver powder and / or silver flakes and further mixed with an organic solvent to form a paste.
【００１７】本発明の低融点接着組成物において、ガラ
ス粉末は、半導体チップをアルミナパッケージ基板に接
着する接着剤として作用し、また銀は、先記したように
接着組成物に高い電気伝導性と熱伝導性を与えると共
に、低融点接着組成物と、半導体チップやアルミナパッ
ケージ基板との間に発生する応力を吸収する作用効果を
有する。In the low melting point adhesive composition of the present invention, the glass powder acts as an adhesive agent for adhering the semiconductor chip to the alumina package substrate, and silver, as described above, has high electrical conductivity. In addition to providing thermal conductivity, it has the effect of absorbing the stress generated between the low melting point adhesive composition and the semiconductor chip or alumina package substrate.
【００１８】本発明においては、ガラス粉末に対し、銀
粉末および／又は銀フレークを、ガラス粉末１５〜６０
体積％、銀４０〜８５体積％となるように混合するが、
銀の混合割合をこのように限定した理由は、以下のとお
りである。In the present invention, the silver powder and / or the silver flakes are added to the glass powder, and the glass powder 15-60.
Mix so that the volume ratio is 40% to 85% by volume of silver,
The reason for limiting the mixing ratio of silver in this way is as follows.
【００１９】すなわち銀が４０体積％よりも少ない場合
は、低融点接着組成物と、半導体チップやアルミナパッ
ケージ基板との間に発生する応力を吸収する作用が不十
分となり、接着剤や半導体チップに亀裂が発生しやす
く、また８５体積％より多い場合は、接着強度が低下す
るからである。That is, when the amount of silver is less than 40% by volume, the action of absorbing the stress generated between the low melting point adhesive composition and the semiconductor chip or the alumina package substrate becomes insufficient, so that the adhesive or the semiconductor chip is not affected. This is because cracks are likely to occur, and when the content is more than 85% by volume, the adhesive strength is lowered.
【００２０】尚、本発明において、粉末とは、形状が粒
状である銀の微粒子のことを指し、フレークとは、形状
が鱗片状である銀の微粒子のことを指す。In the present invention, the powder means fine silver particles having a granular shape, and the flake means fine silver particles having a scaly shape.
【００２１】[0021]
【実施例】以下、本発明の低融点接着組成物を実施例に
基づいて詳細に説明する。EXAMPLES The low melting point adhesive composition of the present invention will be described in detail below based on examples.
【００２２】表１は、本発明において使用するガラス粉
末を示すものである。Table 1 shows the glass powder used in the present invention.
【００２３】[0023]
【表１】 [Table 1]
【００２４】表１のガラス粉末（試料Ａ〜Ｉ）は、以下
のように調製した。The glass powders in Table 1 (Samples A to I) were prepared as follows.
【００２５】まず表１の組成になるように二酸化テル
ル、五酸化バナジウム、鉛丹、酸化銀、亜鉛華、酸化ビ
スマス、酸化第二銅、五酸化ニオブ、アルミナ、三酸化
タングステン、酸化セリウムを調合し、混合した。次い
でこれを白金ルツボに入れ、電気炉で７００℃、１時間
の条件で溶融し、薄板状に成形した後、ボールミルで粉
砕し、２５０メッシュ（目開き６３μｍ）の篩を通過さ
せた。First, tellurium dioxide, vanadium pentoxide, red lead, silver oxide, zinc oxide, bismuth oxide, cupric oxide, niobium pentoxide, alumina, tungsten trioxide, and cerium oxide are prepared so as to have the composition shown in Table 1. And mixed. Then, this was placed in a platinum crucible, melted in an electric furnace at 700 ° C. for 1 hour, molded into a thin plate, crushed with a ball mill, and passed through a 250 mesh (mesh opening 63 μm) sieve.
【００２６】表１から明らかなように、いずれのガラス
粉末も転移点が２１０〜２２０℃と極めて低く、また結
晶は析出しておらず、良好な流動性を有していた。As is clear from Table 1, all the glass powders had a very low transition point of 210 to 220 ° C., and no crystals were precipitated, and they had good fluidity.
【００２７】尚、流動性の判断は、ガラスの比重に相当
する重量の粉末試料を外径２０ｍｍ、高さ約５ｍｍのボ
タンに成形した後、３５０℃、１０分間の条件で加熱
し、このときのボタンの直径が２３ｍｍを超えるものを
良とした。また結晶析出の有無は、流動性試験後のボタ
ン表面を顕微鏡で観察し、結晶が全く認められなかった
ものを良とした。The fluidity is determined by molding a powder sample having a weight corresponding to the specific gravity of glass into a button having an outer diameter of 20 mm and a height of about 5 mm, and then heating at 350 ° C. for 10 minutes. A button having a diameter of more than 23 mm was considered good. Regarding the presence or absence of crystal precipitation, the button surface after the fluidity test was observed under a microscope and no crystal was observed at all, which was regarded as good.
【００２８】また表２は、表１のガラス粉末Ａ〜Ｉに、
銀粉末や銀フレークを混合した低融点接着組成物の実施
例（試料Ｎｏ．１〜９）を示すものである。Table 2 shows the glass powders A to I of Table 1
1 shows examples (Sample Nos. 1 to 9) of low melting point adhesive compositions in which silver powder and silver flakes are mixed.
【００２９】[0029]
【表２】 [Table 2]
【００３０】表２の銀粉末は、形状が粒状で、２．０μ
ｍの平均粒径を有する微粒子であり、また銀フレーク
は、形状が鱗片状で、２．５μｍの平均粒径を有する微
粒子である。The silver powder in Table 2 has a granular shape and has a grain size of 2.0 μm.
The silver flakes are scaly in shape and have an average particle diameter of 2.5 μm.
【００３１】この銀粉末や銀フレークを、表１の各ガラ
ス粉末に対して、表２の割合で混合した後、１０重量％
のブチルカルビトールアセテート溶媒を添加し、十分ロ
ールミル混合することによってペーストにした。次いで
このペーストをアルミナセラミック基板の上に塗布し、
その上にシリコン半導体チップを載置してから乾燥さ
せ、さらに表中の接着温度で加熱した後、アルミナパッ
ケージ基板とシリコン半導体チップの間の接着性を調べ
たところ、いずれの試料も強固な接着性を有していた。The silver powder and the silver flakes were mixed with the glass powders in Table 1 in the proportions shown in Table 2, and then 10% by weight.
Butyl carbitol acetate solvent was added and mixed well by roll mill to form a paste. Then apply this paste on an alumina ceramic substrate,
After placing the silicon semiconductor chip on it, drying it, and heating it at the bonding temperature shown in the table, the adhesion between the alumina package substrate and the silicon semiconductor chip was examined. Had sex.
【００３２】尚、表１におけるガラス転移点と熱膨張係
数は、ディラトメーターによって測定された熱膨張曲線
から求めたものであり、また表２におけるアルミナパッ
ケージ基板と、シリコン半導体チップとの間の接着性
は、通常行われているスタッドプルテストにより評価し
た。すなわち１×１ｃｍのシリコンチップに対し、各試
料を厚さ３０ミクロンになるように塗布した後、その塗
布面をアルミナパッケージ上に載置し、加熱することに
よって接着した。次いでシリコンチップを引き剥がし、
引き剥がしに要した荷重が１５ｋｇ以上のものを良とし
た。The glass transition point and the coefficient of thermal expansion in Table 1 are obtained from the thermal expansion curve measured by a dilatometer, and between the alumina package substrate and the silicon semiconductor chip in Table 2. The adhesiveness was evaluated by a stud pull test which is usually performed. That is, each sample was applied to a silicon chip of 1 × 1 cm so as to have a thickness of 30 μm, and the applied surface was placed on an alumina package and heated to bond them. Then peel off the silicon chip,
When the load required for peeling was 15 kg or more, it was evaluated as good.
【００３３】[0033]
【発明の効果】以上のように本発明の低融点接着組成物
は、半導体チップをアルミナパッケージ基板に固定する
ための接着剤に要求される全ての特性を満足し、特に３
８０℃以下で接着可能であるため、集積度の高いＬＳＩ
等の熱に極めて弱い半導体チップをアルミナパッケージ
基板に接着するのに好適である。As described above, the low melting point adhesive composition of the present invention satisfies all the properties required for an adhesive for fixing a semiconductor chip to an alumina package substrate, and especially 3
Highly integrated LSI because it can be bonded at 80 ℃ or below
It is suitable for adhering a semiconductor chip, which is extremely weak against heat, to the alumina package substrate.
Claims (1)
％、Ｖ2 Ｏ5 １５〜４５％、ＰｂＯ ５〜３５％、Ａ
ｇ2 Ｏ ５〜４０％の組成を有するガラス粉末１５〜６
０体積％と、銀粉末および／又は銀フレーク４０〜８５
体積％からなることを特徴とする低融点接着組成物。1. TeO 2 15-34 by weight percentage.
%, V 2 O 5 15 to 45%, PbO 5 to 35%, A
glass powder 15-6 with g 2 O 5 to 40% of the composition
0% by volume, silver powder and / or silver flakes 40-85
A low melting point adhesive composition comprising a volume%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35597591A JPH05175254A (en) | 1991-12-20 | 1991-12-20 | Low melting point bonding composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35597591A JPH05175254A (en) | 1991-12-20 | 1991-12-20 | Low melting point bonding composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175254A true JPH05175254A (en) | 1993-07-13 |
Family
ID=18446689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35597591A Pending JPH05175254A (en) | 1991-12-20 | 1991-12-20 | Low melting point bonding composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175254A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8497420B2 (en) | 2010-05-04 | 2013-07-30 | E I Du Pont De Nemours And Company | Thick-film pastes containing lead- and tellurium-oxides, and their use in the manufacture of semiconductor devices |
| WO2013111434A1 (en) * | 2012-01-26 | 2013-08-01 | 株式会社 日立製作所 | Assembly and semiconductor module |
| US20140287227A1 (en) * | 2013-03-25 | 2014-09-25 | Hitachi, Ltd. | Joint Material, and Jointed Body |
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