JPH05175101A - Projecting exposure device - Google Patents
Projecting exposure deviceInfo
- Publication number
- JPH05175101A JPH05175101A JP3343601A JP34360191A JPH05175101A JP H05175101 A JPH05175101 A JP H05175101A JP 3343601 A JP3343601 A JP 3343601A JP 34360191 A JP34360191 A JP 34360191A JP H05175101 A JPH05175101 A JP H05175101A
- Authority
- JP
- Japan
- Prior art keywords
- light source
- optical system
- projection
- annular
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路等の製
造に要する微細パターンを基板（ウエハ）上に投影露光
する投影露光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure apparatus for projecting and exposing a fine pattern required for manufacturing a semiconductor integrated circuit or the like onto a substrate (wafer).
【０００２】[0002]
【従来の技術】従来の投影露光装置としては、回路パタ
ーンが形成されたマスク、レチクル等の投影原版（以下
レチクルと称する。）に露光光を照明し、投影光学系を
介してウエハ等の基板（以下ウエハと称する。）上にレ
チクル上の回路パターン像を転写露光するものが知られ
ている。2. Description of the Related Art As a conventional projection exposure apparatus, a projection original plate (hereinafter referred to as a reticle) such as a mask or a reticle on which a circuit pattern is formed is illuminated with exposure light, and a substrate such as a wafer is projected through a projection optical system. It is known to transfer and expose a circuit pattern image on a reticle onto a wafer (hereinafter referred to as a wafer).
【０００３】ここで、レチクル上に転写される解像力
は、露光光の波長をλとし、投影光学系の開口数をＮＡ
とするとき、理論的には０．５×λ／ＮＡ程度である。
しかしながら、実際のリソグラフィ工程ではウエハの湾
曲、プロセスによるウエハの段差等の影響、またはフォ
トレジスト自体の厚さのために、ある程度の焦点深度が
必要となる。このため、焦点深度等の要因を加味した実
用的な解像力は、ｋ×λ／ＮＡとして表され、ここで、
ｋはプロセス係数と呼ばれ、通常０．７〜０．８程度で
ある。Here, the resolving power transferred onto the reticle is such that the wavelength of the exposure light is λ and the numerical aperture of the projection optical system is NA.
Is theoretically about 0.5 × λ / NA.
However, in the actual lithography process, a certain depth of focus is required due to the curvature of the wafer, the influence of the step difference of the wafer due to the process, or the thickness of the photoresist itself. Therefore, the practical resolving power considering factors such as the depth of focus is expressed as k × λ / NA, where
k is called a process coefficient and is usually about 0.7 to 0.8.
【０００４】[0004]
【発明が解決しようとする課題】ところで、近年におい
ては、特にウエハ上に転写されるパターンの微細化が進
んでおり、この微細化に対応するための手法として、上
記の解像力の式から明らかな如く、露光光の短波長化、
あるいは、投影光学系の開口数ＮＡを大きくすることが
考えられる。By the way, in recent years, especially the miniaturization of the pattern transferred onto the wafer has progressed, and as a method for dealing with this miniaturization, it is clear from the above formula of the resolution. As mentioned above, the wavelength of the exposure light is shortened,
Alternatively, it is conceivable to increase the numerical aperture NA of the projection optical system.
【０００５】しかし、露光光の短波長化を行う手法で
は、この露光光の短波長化に伴い投影光学系のレンズに
使用できる硝材は限られたものとなり、この制約された
硝材の中で十分なる収差補正が成された投影光学系を設
計することは困難である。また、投影光学系の開口数Ｎ
Ａを大きくする手法では、確かに解像力の向上は図れる
ものの、投影光学系の焦点深度が投影光学系の開口数Ｎ
Ａの二乗に反比例する。従って、焦点深度が著しく減少
するため好ましくない。しかも、大きな開口数ＮＡを持
ちながら十分に収差補正が成された投影光学系を設計す
ることは難しい。However, in the method of shortening the wavelength of the exposure light, the glass material that can be used for the lens of the projection optical system is limited due to the shortening of the wavelength of the exposure light. It is difficult to design a projection optical system that has the following aberration correction. In addition, the numerical aperture N of the projection optical system
Although the method of increasing A can certainly improve the resolution, the depth of focus of the projection optical system is not limited to the numerical aperture N of the projection optical system.
It is inversely proportional to the square of A. Therefore, the depth of focus is significantly reduced, which is not preferable. Moreover, it is difficult to design a projection optical system that has a large numerical aperture NA and is sufficiently corrected for aberrations.
【０００６】本発明は、以上の課題に鑑みてなされたも
のであり、投影光学系の焦点深度を向上させることによ
り、実用上においてレチクル上の回路パターンをより高
解像度でウエハに忠実に転写できる投影露光装置を提供
することを目的としている。The present invention has been made in view of the above problems. By improving the depth of focus of the projection optical system, the circuit pattern on the reticle can be faithfully transferred to the wafer with higher resolution in practical use. An object is to provide a projection exposure apparatus.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに、レチクル上のパターンを投影光学系を介して基板
上に投影露光する本発明の投影露光装置は、例えば図１
に示す如く、露光光を供給する光源手段（１、２、３、
４）と、その光源手段（１、２、３、４）からの光によ
って輪帯状の２次光源を形成する輪帯光源形成手段
（５、６）と、その輪帯光源形成手段（５、６）からの
光束を投影原版上に集光するコンデンサーレンズ（７）
とを有し、輪帯状の２次光源の内径をｄ1 、輪帯状の２
次光源の外径をｄ2 とするとき、以下の関係を満足する
ように構成したものである。To achieve the above object, a projection exposure apparatus of the present invention for projecting and exposing a pattern on a reticle onto a substrate via a projection optical system is shown in FIG.
As shown in, light source means (1, 2, 3,
4), an annular light source forming means (5, 6) for forming an annular secondary light source by the light from the light source means (1, 2, 3, 4), and an annular light source forming means (5, 6). Condenser lens (7) that collects the light flux from 6) on the projection master
And the inner diameter of the annular light source is d 1 and the annular light source is 2
When the outer diameter of the next light source and d 2, are those configured so as to satisfy the following relation.
【０００８】１／３≦ｄ1 ／ｄ2 ≦２／３ そして、上記の基本構成に基づいて、投影光学系の投影
原版（レチクル）側の開口数をＮＡ1 、輪帯状の２次光
源の外径により決定される照明光学系の開口数をＮＡ2
とするとき、以下の条件を満足することをが望ましい。 ０．４５≦ＮＡ2 ／ＮＡ1 ≦０．８1/3 ≦ d 1 / d 2 ≦ 2/3 Based on the above basic structure, the numerical aperture on the projection original (reticle) side of the projection optical system is NA 1 , and the annular secondary light source is The numerical aperture of the illumination optical system determined by the outer diameter is NA 2
Then, it is desirable to satisfy the following conditions. 0.45 ≦ NA 2 / NA 1 ≦ 0.8
【０００９】[0009]
【作 用】本発明は、光源手段からの露光用の光によっ
て輪帯状の２次光源を形成し、この輪帯状の面光源から
の光によってレチクル上を照明するという、所謂輪帯照
明（あるいは傾斜照明）を行うようにしたものである。
このとき、輪帯状の２次光源の内径をｄ1 、輪帯状の２
次光源の外径をｄ2 とするとき、 １／３≦ｄ1 ／ｄ2 ≦２／３ （１） を満足するように輪帯状の２次光源を形成することによ
り、投影光学系の焦点深度を向上させて実用的な解像力
の向上が達成できた。[Working] The present invention is a so-called ring-shaped illumination (or ring-shaped illumination) in which an annular secondary light source is formed by the exposure light from the light source means and the reticle is illuminated by the light from the annular surface light source. Inclined illumination) is performed.
At this time, the inner diameter of the ring-shaped secondary light source is d 1 , and the ring-shaped 2
When the outer diameter of the secondary light source is d 2 , a ring-shaped secondary light source is formed so as to satisfy 1/3 ≦ d 1 / d 2 ≦ 2/3 (1). By improving the depth, we were able to achieve a practical improvement in resolution.
【００１０】具体的には、本発明によって、前述の如く
実用的な最小解像線幅に大きく関与するプロセス係数ｋ
を０．５程度に向上させることが可能となった。一例と
して、光源の波長λをｉ線（365nm ）、投影レンズのウ
エハ側の開口数ＮＡを０．４とするとき、プロセス係数
ｋを０．７とした従来の露光装置によって解像できる線
幅は、ｋ×λ／ＮＡより、０．６４μｍ程度となるが、
本発明による露光装置では、プロセス係数ｋが０．５程
度となるため、解像できる線幅は、０．４６μｍとな
る。従って、従来の装置よりも実用上十分なる焦点深度
を確保した上での解像度の向上が図れていることが分か
る。Specifically, according to the present invention, the process coefficient k which greatly contributes to the practical minimum resolution line width as described above.
Can be improved to about 0.5. As an example, when the wavelength λ of the light source is i-line (365 nm) and the numerical aperture NA on the wafer side of the projection lens is 0.4, a line width that can be resolved by a conventional exposure apparatus with a process coefficient k of 0.7. Is about 0.64 μm from k × λ / NA,
In the exposure apparatus according to the present invention, since the process coefficient k is about 0.5, the resolvable line width is 0.46 μm. Therefore, it can be seen that the resolution can be improved while ensuring a practically sufficient depth of focus as compared with the conventional device.
【００１１】ここで、条件（１）の下限値を越えると、
輪帯状光源の内径が小さくなり過ぎ、本発明による輪帯
照明の効果が薄れ、投影光学系の焦点深度と解像度とを
向上させることが困難となる。逆に条件（１）の上限を
越えると、レチクル上では同じ線幅のパターンでも周期
性の有無によりウエハ上に転写される線幅が異なり、レ
チクルパターンを忠実にウエハ上に転写することができ
なくなる。また、露光量変化に対する線幅の変化量が大
きくなるため、所望の線幅のパターンをウエハ上に形成
することが難しくなる。If the lower limit of condition (1) is exceeded,
The inner diameter of the annular light source becomes too small, and the effect of the annular illumination according to the present invention diminishes, making it difficult to improve the depth of focus and the resolution of the projection optical system. On the contrary, if the upper limit of the condition (1) is exceeded, even if the pattern has the same line width on the reticle, the line width transferred on the wafer varies depending on the presence or absence of periodicity, and the reticle pattern can be faithfully transferred on the wafer. Disappear. Further, since the amount of change in the line width with respect to the change in the exposure amount becomes large, it becomes difficult to form a pattern having a desired line width on the wafer.
【００１２】さらに、本発明の輪帯照明による効果を十
分に引き出すためには、投影光学系の投影原版側の開口
数をＮＡ1 、輪帯状の２次的な光源の外径により決定さ
れる照明光学系の開口数をＮＡ2 とするとき、以下の条
件（２）を満足することが望ましい。 ０．４５≦ＮＡ2 ／ＮＡ1 ≦０．８ （２） この条件（２）の下限を越えると、輪帯照明によりレチ
クルを傾斜照明する光の入射角度が小さくなり、本発明
による輪帯照明の効果を殆ど得ることができない。この
ため、輪帯照明を行うこと自体無意味となってしまう。
逆に条件（２）の上限を越えると、空間像としての解像
度は向上するものの、焦点深度が低下する。さらには、
ベストフォーカスでのコントラストが大幅に低下するた
め好ましくない。Further, in order to sufficiently bring out the effect of the annular illumination of the present invention, the numerical aperture on the projection original side of the projection optical system is determined by NA 1 , and the outer diameter of the annular secondary light source. When the numerical aperture of the illumination optical system is NA 2 , it is desirable to satisfy the following condition (2). 0.45 ≦ NA 2 / NA 1 ≦ 0.8 (2) If the lower limit of this condition (2) is exceeded, the incident angle of the light that obliquely illuminates the reticle by the annular illumination becomes small, and the annular illumination according to the present invention. Can hardly obtain the effect of. For this reason, it becomes meaningless to perform annular illumination.
On the contrary, when the value exceeds the upper limit of the condition (2), the resolution as an aerial image improves, but the depth of focus decreases. Moreover,
It is not preferable because the contrast at the best focus is significantly reduced.
【００１３】[0013]
【実施例】図１は本発明による第１実施例の概略的構成
を示す図であり、以下、この図１を参照しながら本発明
による第１実施例を詳細に説明する。水銀アーク灯１か
らの光（例えば、ｇ線(436nm) 、ｉ線(365nm）等の光）
は、楕円鏡２によって集光され、反射鏡３を介して、コ
リメータレンズ４により平行光束に変換される。その
後、複数の棒状レンズ素子の集合体で構成されるフライ
アイレンズ５（オプティカルインテグレータ）を平行光
束が通過すると、これの射出側に複数の光源像が形成さ
れ、ここには、フライアイレンズ５を構成する棒状レン
ズ素子の数に相当する複数の２次的な光源が形成され
る。FIG. 1 is a diagram showing a schematic configuration of a first embodiment according to the present invention, and the first embodiment according to the present invention will be described in detail below with reference to FIG. Light from mercury arc lamp 1 (eg g-line (436nm), i-line (365nm), etc.)
Is condensed by the elliptical mirror 2 and is converted into a parallel light flux by the collimator lens 4 via the reflecting mirror 3. After that, when the parallel light flux passes through the fly-eye lens 5 (optical integrator) composed of an assembly of a plurality of rod-shaped lens elements, a plurality of light source images are formed on the exit side of the fly-eye lens 5 and the fly-eye lens 5 is formed there. A plurality of secondary light sources corresponding to the number of rod-shaped lens elements constituting the above are formed.
【００１４】２次的光源が形成される位置には、輪帯状
の透過部を持つ開口絞り６が設けられており、ここには
輪帯状の複数の光源が形成される。開口絞り６は、図２
に示す如く、例えば石英等の透明基板上に輪帯状の透過
部６ａが形成される如くクロム等の遮光部６ｂ、６ｃの
蒸着によって形成されている。また、円形状の遮光部材
とそれよりも大きな円形状の開口を持つ遮光部材とで開
口絞り６を構成しても良い。An aperture stop 6 having a ring-shaped transmitting portion is provided at a position where the secondary light source is formed, and a plurality of ring-shaped light sources are formed here. The aperture stop 6 is shown in FIG.
As shown in FIG. 3, light-shielding portions 6b and 6c made of chromium or the like are formed by vapor deposition so that the transparent portion 6a in the form of a ring is formed on a transparent substrate such as quartz. Further, the aperture stop 6 may be composed of a circular light-shielding member and a light-shielding member having a circular aperture larger than that.
【００１５】ここで、開口絞り６の遮光体６ｂの径（輪
帯状の透過部６ａの内径）をｄ1 、開口絞り６の遮光体
６ｃの径（輪帯状の透過部６ａの外径）をｄ2 とし、ｄ
1 ／ｄ2 を輪帯比と定義するとき、開口絞り６の輪帯比
は、１／３乃至２／３の範囲で構成されている。さて、
開口絞り６にて形成された複数の２次的光源からの光
は、反射鏡７を介して、コンデンサーレンズ８により集
光されて、レチクル９上の回路パターン９ａを斜め方向
から重畳的に均一照明する。すると、投影光学系１０に
よってウエハ１１上には、レチクル９上の回路パターン
像が形成される。従って、ウエハ１１上に塗布されたレ
ジストが感光されて、ここにはレチクル９上の回路パタ
ーン像が転写される。Here, the diameter of the light shield 6b of the aperture stop 6 (inner diameter of the ring-shaped transparent portion 6a) is d 1 , and the diameter of the light shield 6c of the aperture stop 6 (outer diameter of the ring-shaped transparent portion 6a). d 2 and d
When 1 / d 2 is defined as the annular zone ratio, the annular zone ratio of the aperture stop 6 is in the range of 1/3 to 2/3. Now,
Light from a plurality of secondary light sources formed by the aperture stop 6 is condensed by the condenser lens 8 via the reflecting mirror 7, and the circuit pattern 9a on the reticle 9 is uniformly superimposed in an oblique direction. Illuminate. Then, the projection optical system 10 forms a circuit pattern image on the reticle 9 on the wafer 11. Therefore, the resist applied on the wafer 11 is exposed to light, and the circuit pattern image on the reticle 9 is transferred thereto.
【００１６】投影光学系１０の瞳（入射瞳）位置には、
開口絞り１０ａが設けられており、この開口絞り１０ａ
は、開口絞り６と共役に設けられている。図３は開口絞
り１０ａの円形状の開口部Ｐの様子を示したものであ
り、図示の如く、開口絞り１０ａの開口部Ａの内側に
は、輪帯状の２次光源の像Ｉが形成されており、この２
次光源の像Ｉの輪帯比（２次光源の像の内径Ｄ1 ／２次
光源の像の外径Ｄ2 ）は上述の開口絞り６の輪帯比と等
しくなっている。At the pupil (incident pupil) position of the projection optical system 10,
An aperture stop 10a is provided and this aperture stop 10a
Are provided conjugate with the aperture stop 6. FIG. 3 shows a state of the circular aperture P of the aperture stop 10a. As shown in the figure, an annular zone-shaped secondary light source image I is formed inside the aperture A of the aperture stop 10a. And this 2
The annular zone ratio of the image I of the secondary light source (the inner diameter D 1 of the image of the secondary light source / the outer diameter D 2 of the image of the secondary light source) is equal to the annular zone ratio of the aperture stop 6 described above.
【００１７】ここで、開口絞り１０ａの開口部の径をＤ
3 とするとき、２次光源の像の外径と開口絞り１０ａの
開口部Ａの径との比率（Ｄ2 ／Ｄ3 ）は、コヒーレンス
ファクター、即ちσ値と呼ばれ、このとき、輪帯状２次
光源の像Ｉは、図３に示す如く、０．４５乃至０．８の
σ値の範囲で形成されている。なお、σ値は、図１に示
す如く、開口絞り１０ａの最周縁からの光軸Ａｘに平行
な光線Ｒ1 により決定される投影光学系１０のレチクル
側の開口数をＮＡ1(=sinθ1)とし、開口絞り６の最周縁
（最外径）からの光軸Ａｘに平行な光線Ｒ2 により決定
される照明光学系（１〜８）の開口数ＮＡ2(=sinθ2)と
するとき、σ値は、次式でも定義される。Here, the diameter of the aperture of the aperture stop 10a is D
3 to the time, the ratio of the diameter of the opening A of the outer diameter of the aperture stop 10a of the image of the secondary light source (D 2 / D 3) is called the coherence factor, i.e. σ value, this time, annular The image I of the secondary light source is formed in the range of σ value of 0.45 to 0.8 as shown in FIG. The σ value is, as shown in FIG. 1, the numerical aperture on the reticle side of the projection optical system 10 determined by the ray R 1 parallel to the optical axis Ax from the outermost edge of the aperture stop 10a, NA 1 (= sin θ 1 ), And the numerical aperture NA 2 (= sin θ 2 ) of the illumination optical system (1 to 8) determined by the ray R 2 parallel to the optical axis Ax from the outermost edge (outermost diameter) of the aperture stop 6. , Σ value is also defined by the following equation.
【００１８】σ＝ＮＡ2 ／ＮＡ1 ところで、開口絞り１０ａの口径を可変に構成して、σ
値を変化させると、焦点深度と解像度等とを制御するこ
とができる。従って、本実施例では、開口絞り６の配置
により輪帯照明を行っているため、焦点深度及び解像度
のより一層の向上が達成できるが、開口絞り１０ａの開
口部Ａの径を変化させてσ値を変更することにより、微
細なパターンを焼き付けが要求されるプロセス、深い焦
点深度が要求されるプロセス等の各プロセスに応じた最
適な照明状態を達成できる。Σ = NA 2 / NA 1 By the way, the aperture of the aperture stop 10a is made variable,
By changing the values, the depth of focus, the resolution, etc. can be controlled. Therefore, in the present embodiment, since the annular illumination is performed by disposing the aperture stop 6, it is possible to further improve the depth of focus and the resolution, but by changing the diameter of the aperture A of the aperture stop 10a, σ By changing the value, it is possible to achieve an optimum illumination state according to each process such as a process requiring printing of a fine pattern and a process requiring a deep depth of focus.
【００１９】また、図１では、開口絞り６を固定的に用
いた例を示したが、図４に示す如く、輪帯比が互いに異
なる複数の開口絞りを円周方向に沿って円形基板上に設
けてけも良い。図４では、１／３〜２／３の範囲内で互
いに異なる輪帯比を持つ第１の開口絞り群（６０ｂ〜６
０ｃ）と、この第１の開口絞り群とは異なる外径を有し
１／３〜２／３の範囲内で互いに異なる輪帯比を持つ第
２の開口絞り群（６０ｆ〜６０ｈ）とが透明な円形基板
６０上にクロム等の蒸着等により形成されている。そし
て、さらに、円形基板６０上には第１の開口絞り群の外
径と同じ径を持つ円形開口絞り６０ａと第２の開口絞り
群の外径と同じ径を持つ円形開口絞り６０ｅとが設けら
れている。Further, although FIG. 1 shows an example in which the aperture stop 6 is fixedly used, as shown in FIG. 4, a plurality of aperture stops having different ring zone ratios are arranged on the circular substrate along the circumferential direction. It may be installed in the. In FIG. 4, first aperture stop groups (60b to 6) having different ring zone ratios within the range of 1/3 to 2/3 are shown.
0c) and a second aperture stop group (60f to 60h) having an outer diameter different from that of the first aperture stop group and having different annular zone ratios within the range of 1/3 to 2/3. It is formed on the transparent circular substrate 60 by vapor deposition of chromium or the like. Further, on the circular substrate 60, a circular aperture diaphragm 60a having the same diameter as the outer diameter of the first aperture diaphragm group and a circular aperture diaphragm 60e having the same diameter as the outer diameter of the second aperture diaphragm group are provided. Has been.
【００２０】以上のターレット式による開口絞りを適宜
回転させて、最適な輪帯比を持つ開口絞り（６０ｂ〜６
０ｃ，６０ｆ〜６０ｈ）をフライアイレンズ６の射出側
に設定することにより、上述の如く、焦点深度と解像度
等とを制御することができるため、最適なσ値のもとで
の最適な輪帯照明が達成できる。また、通常に円形開口
も持つ開口絞り（６０ａ，６０ｅ）をフライアイレンズ
６の射出側に設定すれば、通常の照明による露光を行う
ことができる。By appropriately rotating the above-mentioned turret type aperture diaphragm, the aperture diaphragm (60b-6b) having an optimum ring zone ratio can be obtained.
0c, 60f to 60h) is set on the exit side of the fly-eye lens 6, the depth of focus and the resolution can be controlled as described above. Belt lighting can be achieved. Further, if an aperture stop (60a, 60e) that also normally has a circular aperture is set on the exit side of the fly-eye lens 6, exposure with normal illumination can be performed.
【００２１】さらには、プロセス情報、必要とされる焦
点深度の情報さらには露光されるべき最小線幅等の情報
を含むバーコード等のマークを持つレチクルを用い、こ
のマークを検知するマーク検知手段を設けても良い。こ
れにより、このマーク検知手段を介して検知された情報
に基づいて、上記ターレット式等による交換可能な開口
絞りの適切な輪帯比、適切なσ値を自動的に設定するよ
うにしても良い。Further, a reticle having a mark such as a bar code containing process information, required depth of focus information and information such as a minimum line width to be exposed is used, and mark detection means for detecting this mark is used. May be provided. Thereby, based on the information detected through the mark detecting means, an appropriate annular zone ratio and an appropriate σ value of the replaceable aperture stop of the turret type may be automatically set. ..
【００２２】次に、図５は本発明による第２実施例の概
略的構成を示す図であり、この図５を参照しながら本発
明による第２実施例を説明する。図１の第１実施例の構
成と同じ機能を持つ部材には同じ符号を付してある。第
２実施例が第１実施例と異なる点は、フライアイレンズ
５と反射鏡７との間に設けられていた開口絞り６の代わ
りに、集光レンズ２０と、入射側が円形状に束ねられる
と共に射出側が輪帯状に束ねられた複数の光フアイバー
より構成されるライトガイド２１とを設け、フライアイ
レンズ５からの光束を遮光することなく輪帯状の多数の
光源を形成した点である。Next, FIG. 5 is a diagram showing a schematic configuration of a second embodiment according to the present invention. The second embodiment according to the present invention will be described with reference to FIG. Members having the same functions as those of the first embodiment shown in FIG. 1 are designated by the same reference numerals. The second embodiment differs from the first embodiment in that instead of the aperture stop 6 provided between the fly-eye lens 5 and the reflecting mirror 7, the condenser lens 20 and the incident side are bundled into a circular shape. At the same time, a light guide 21 composed of a plurality of optical fibers bundled in an annular shape on the exit side is provided, and a large number of annular light sources are formed without blocking the light flux from the fly-eye lens 5.
【００２３】このライトガイド２１の入射端には、図６
に示す如く、複数のフアイバーを束ねる円形状部材２１
ａが設けられており、これの射出端には複数のフアイバ
ーを輪帯状に束ねる輪帯状部材２１ｂが設けられてい
る。ここで、ライトガイド２１の射出端の外径に対する
内径の比率、即ち輪帯比は１／３乃至２／３となるよう
に構成されており、投影光学系の開口絞り１０ａの位置
には、図３に示した如く、σ値が０．４５乃至０．８程
度となる輪帯状の光源像が形成される。As shown in FIG.
As shown in FIG. 2, a circular member 21 for bundling a plurality of fibers
a is provided, and an annular member 21b for bundling a plurality of fibers in an annular shape is provided at the exit end thereof. Here, the ratio of the inner diameter to the outer diameter of the exit end of the light guide 21, that is, the annular zone ratio is configured to be 1/3 to 2/3, and at the position of the aperture stop 10a of the projection optical system, As shown in FIG. 3, a ring-shaped light source image having a σ value of about 0.45 to 0.8 is formed.
【００２４】以上の構成により、本実施例では、光源１
からの光を何ら遮光することなく効率良く輪帯照明が行
えるため、焦点深度及び解像度のより一層の向上が達成
できるのみならず、高いスループットのもとでの露光を
達成することができる。なお、本実施例でも、上述の如
く、レチクル上に各種の情報を盛り込んだマークを検知
する手段を設け、この検知情報に基づいて、開口絞り１
０ａの開口部の最適な径を設定し、最適なσ値のもとで
の輪帯照明を行うようにしても良い。With the above structure, in this embodiment, the light source 1
Since it is possible to efficiently perform the annular illumination without blocking any light from the above, it is possible not only to further improve the depth of focus and resolution, but also to achieve exposure under high throughput. Also in this embodiment, as described above, the reticle is provided with a means for detecting a mark containing various information, and the aperture stop 1 is based on this detection information.
It is also possible to set the optimum diameter of the opening of 0a and perform annular illumination under the optimum σ value.
【００２５】また、本発明による装置の光源としてエキ
シマレーザ（ＫｒＦ:248mn、ＡｒＦ:193mn等）を用いて
も良いことは言うまでもない。Needless to say, an excimer laser (KrF: 248mn, ArF: 193mn, etc.) may be used as the light source of the device according to the present invention.
【００２６】[0026]
【発明の効果】以上の如く、本発明によれば、従来の投
影露光装置よりも大きな焦点深度を確保できるため、実
用上より高い解像度のもとでの露光が実現できる。これ
により、従来の投影露光装置よりも、さらに微細なパタ
ーンをウエハ上に転写することができる。As described above, according to the present invention, since a larger depth of focus can be secured as compared with the conventional projection exposure apparatus, it is possible to perform exposure at a higher resolution than practically. As a result, a finer pattern can be transferred onto the wafer as compared with the conventional projection exposure apparatus.
【図１】図１は本発明による第１実施例の概略的構成を
示す図である。FIG. 1 is a diagram showing a schematic configuration of a first embodiment according to the present invention.
【図２】図２は開口絞りの様子を示す平面図である。FIG. 2 is a plan view showing a state of an aperture stop.
【図３】図３は投影光学系の瞳位置に設けられた開口絞
りの開口部の様子を示す図である。FIG. 3 is a diagram showing a state of an aperture of an aperture stop provided at a pupil position of a projection optical system.
【図４】輪帯照明を行うための開口絞りをターレット式
にした様子を示す図である。FIG. 4 is a diagram showing a state in which an aperture stop for performing annular illumination is of a turret type.
【図５】図４は本発明による第２実施例の概略的構成を
示す図である。FIG. 4 is a diagram showing a schematic configuration of a second embodiment according to the present invention.
【図６】ライトガイドの様子を示す斜示図である。FIG. 6 is a perspective view showing a state of a light guide.
１・・・ 水銀アーク灯 ２・・・ 楕円鏡 ３，７・・・ 反射鏡 ４・・・ コリメータレンズ ５・・・ フライアイレンズ ６，１０ａ・・・ 開口絞り ８・・・ コンデンサーレンズ ９・・・ レチクル １０・・・ 投影光学系 １１・・・ ウエハ ２１・・・ 集光レンズ ２２・・・ ライトガイド 1 ... Mercury arc lamp 2 ... Elliptic mirror 3, 7 ... Reflecting mirror 4 ... Collimator lens 5 ... Fly-eye lens 6, 10a ... Aperture diaphragm 8 ... Condenser lens 9. ..Reticle 10 ... Projection optical system 11 ... Wafer 21 ... Condensing lens 22 ... Light guide
Claims (2)
上のパターンを投影光学系を介して基板上に投影露光す
る投影露光装置において、 前記照明光学系は、露光光を供給する光源手段と、該光
源手段からの光によって輪帯状の２次光源を形成する輪
帯光源形成手段と、該輪帯光源形成手段からの光束を前
記投影原版上に集光するコンデンサーレンズとを有し、 前記輪帯状の２次光源の内径をｄ1 、前記輪帯状の２次
光源の外径をｄ2 とするとき、以下の条件を満足するこ
とを特徴とする投影露光装置。 １／３≦ｄ1 ／ｄ2 ≦２／３1. A projection exposure apparatus for projecting and exposing a pattern on a projection original plate onto a substrate through the projection optical system by exposure light from the illumination optical system, wherein the illumination optical system includes a light source means for supplying the exposure light. An annular light source forming means for forming an annular secondary light source by the light from the light source means, and a condenser lens for condensing the light flux from the annular light source forming means onto the projection original plate, A projection exposure apparatus, wherein the following conditions are satisfied, where d 1 is the inner diameter of the ring-shaped secondary light source and d 2 is the outer diameter of the ring-shaped secondary light source. 1/3 ≦ d 1 / d 2 ≦ 2/3
Ａ1 、前記輪帯状の２次光源の外径により決定される前
記照明光学系の開口数をＮＡ2 とするとき、以下の条件
を満足することを特徴とする請求項１記載の投影露光装
置。 ０．４５≦ＮＡ2 ／ＮＡ1 ≦０．８2. The numerical aperture on the projection original side of the projection optical system is N
2. The projection exposure apparatus according to claim 1, wherein the following conditions are satisfied, where A 1 and NA 2 are the numerical apertures of the illumination optical system determined by the outer diameter of the ring-shaped secondary light source. .. 0.45 ≦ NA 2 / NA 1 ≦ 0.8
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34360191A JP3336438B2 (en) | 1991-12-25 | 1991-12-25 | Projection exposure apparatus, exposure method, and circuit manufacturing method |
| US08/370,216 US5530518A (en) | 1991-12-25 | 1994-12-07 | Projection exposure apparatus |
| US08/480,863 US5576801A (en) | 1991-12-25 | 1995-06-07 | Projection exposure apparatus |
| US09/320,472 USRE39662E1 (en) | 1991-12-25 | 1999-05-25 | Projection exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34360191A JP3336438B2 (en) | 1991-12-25 | 1991-12-25 | Projection exposure apparatus, exposure method, and circuit manufacturing method |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000173209A Division JP2001028335A (en) | 2000-01-01 | 2000-06-09 | Projection aligner and method therefor, and manufacture of circuit thereof |
| JP2002064764A Division JP2002353131A (en) | 2002-03-11 | 2002-03-11 | Projection aligner and aligning method, and method for fabricating circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05175101A true JPH05175101A (en) | 1993-07-13 |
| JP3336438B2 JP3336438B2 (en) | 2002-10-21 |
Family
ID=18362796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34360191A Expired - Lifetime JP3336438B2 (en) | 1991-12-25 | 1991-12-25 | Projection exposure apparatus, exposure method, and circuit manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3336438B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0722242A2 (en) * | 1995-01-11 | 1996-07-17 | Dainippon Screen Mfg. Co., Ltd. | Image reading apparatus |
| KR20000066337A (en) * | 1999-04-15 | 2000-11-15 | 김영환 | Semiconductor Exposure System |
| JP2001028335A (en) * | 2000-01-01 | 2001-01-30 | Nikon Corp | Projection aligner and method therefor, and manufacture of circuit thereof |
-
1991
- 1991-12-25 JP JP34360191A patent/JP3336438B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0722242A2 (en) * | 1995-01-11 | 1996-07-17 | Dainippon Screen Mfg. Co., Ltd. | Image reading apparatus |
| EP0722242A3 (en) * | 1995-01-11 | 1998-09-02 | Dainippon Screen Mfg. Co., Ltd. | Image reading apparatus |
| KR20000066337A (en) * | 1999-04-15 | 2000-11-15 | 김영환 | Semiconductor Exposure System |
| JP2001028335A (en) * | 2000-01-01 | 2001-01-30 | Nikon Corp | Projection aligner and method therefor, and manufacture of circuit thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3336438B2 (en) | 2002-10-21 |
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