JPH05174436A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH05174436A JPH05174436A JP35784291A JP35784291A JPH05174436A JP H05174436 A JPH05174436 A JP H05174436A JP 35784291 A JP35784291 A JP 35784291A JP 35784291 A JP35784291 A JP 35784291A JP H05174436 A JPH05174436 A JP H05174436A
- Authority
- JP
- Japan
- Prior art keywords
- zno
- layer
- magneto
- underlayer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、書換え可能な光磁気記
録媒体に関する。詳しくは、Ｐｔ層を有する記録膜、例
えば、Ｐｔ／Ｃｏで構成される交互積層膜を、ＺｎＯの
下地層を介して基板上に成膜して成る光磁気記録媒体に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rewritable magneto-optical recording medium. More specifically, the present invention relates to a magneto-optical recording medium in which a recording film having a Pt layer, for example, an alternating laminated film made of Pt / Co is formed on a substrate via a ZnO underlayer.
【０００２】[0002]
【従来の技術】繰り返して記録・再生の可能な光磁気記
録媒体用の記録膜（垂直磁化膜）として、ＰｔとＣｏを
交互に積層して成る交互積層膜が提案されている。これ
は、Ｐｔ／Ｃｏの交互積層膜の短波長領域での感度が良
好であり、高密度記録媒体として有望なためである。な
お、上記の交互積層膜と基板との間には、図４に示すよ
うに、カ−効果を増大させるために、ＳｉＮ等の誘電体
膜が下地層10として成膜されているものもあり、その表
面11には、通常、平滑化のために、エッチング処理が施
されている（第14回日本応用磁気学会講演概要集Ｐ6
5）。2. Description of the Related Art As a recording film (perpendicular magnetization film) for a magneto-optical recording medium that can be repeatedly recorded / reproduced, an alternating laminated film in which Pt and Co are alternately laminated has been proposed. This is because the Pt / Co alternating laminated film has good sensitivity in the short wavelength region and is promising as a high density recording medium. In some cases, as shown in FIG. 4, a dielectric film such as SiN is formed between the alternate laminated film and the substrate as the underlayer 10 in order to increase the car effect. , Its surface 11 is usually subjected to etching treatment for smoothing (Proceedings of the 14th Annual Meeting of the Japan Society for Applied Magnetics P6).
Five).
【０００３】[0003]
【発明が解決しようとする課題】基板上にＳｉＮ等の誘
電体膜を下地層10として形成し、その上に、Ｐｔ／Ｃｏ
の交互積層膜から成る垂直磁化膜を成膜する上記の構成
では、ＳｉＮがアモルファス状態である。このため、該
ＳｉＮ膜の上に形成されるＰｔ層も、当初は〔１１１〕
方向に綺麗に積層されず、垂直磁気異方性が小さい。し
たがって、高密度記録に必要な保磁力も、１〔ｋＯｅ〕
程度と小さい。A dielectric film such as SiN is formed as a base layer 10 on a substrate, and Pt / Co is formed on the base layer 10.
In the above-described structure in which the perpendicularly magnetized film composed of the alternate laminated film of 1 is formed, SiN is in an amorphous state. Therefore, the Pt layer formed on the SiN film is initially [111]
The layers are not laminated in the right direction, and the perpendicular magnetic anisotropy is small. Therefore, the coercive force required for high density recording is also 1 [kOe].
Small and small.
【０００４】本出願人は、上記の問題に鑑み、先に、下
地層としてＺｎＯを用いた光磁気記録媒体を考案して、
出願している（平成３年特許願第126087号）。上記出願
の光磁気記録媒体では、下地層（ＺｎＯ）が、〔１１
１〕方向から見たＰｔと同様に、密に並ぶ。このため、
下地層（ＺｎＯ）の上に形成されるＰｔ層も〔１１１〕
方向に並び易く、高密度記録に必要な保磁力も、ＳｉＮ
の下地層を用いる従来の場合より向上している。In view of the above problems, the present applicant has previously devised a magneto-optical recording medium using ZnO as an underlayer,
I have applied for it (1991 Patent Application No. 126087). In the magneto-optical recording medium of the above application, the underlayer (ZnO) is [11
1] Like Pt seen from the direction, they are closely arranged. For this reason,
The Pt layer formed on the underlayer (ZnO) is also [111].
The coercive force required for high-density recording can be easily aligned in the direction
This is an improvement over the conventional case using the underlayer of.
【０００５】しかし、ＺｎＯを下地層として用いた上記
出願の構成では、〔１１１〕方向から見たＰｔの原子間
距離が、 2.8〔Å〕であるのに対して、ＺｎＯの原子間
距離は、3.25〔Å〕と大きく、両者には、無視できない
程度の差が存在する。このため、Ｐｔ層を、積層の初期
から密に並ばせることは困難であり、その分、保磁力の
向上も不十分である。本発明は、上記出願（平成３年特
許願第126087号）の延長上にあり、Ｐｔ層を有する記録
膜のＰｔ層が下地層（ＺｎＯ）に接するように基板上に
成膜される光磁気記録媒体の保磁力を、より一層高める
ことを目的とする。However, in the structure of the above application using ZnO as the underlayer, the interatomic distance of Pt when viewed from the [111] direction is 2.8 [Å], whereas the interatomic distance of ZnO is It is as large as 3.25 [Å], and there is a considerable difference between the two. Therefore, it is difficult to arrange the Pt layers densely from the initial stage of stacking, and the coercive force is not improved correspondingly. The present invention is an extension of the above application (1991 Patent Application No. 126087), and a magneto-optical film formed on a substrate so that a Pt layer of a recording film having a Pt layer is in contact with an underlayer (ZnO). The purpose is to further increase the coercive force of the recording medium.
【０００6 】[0006]
【課題を解決するための手段】本発明は、Ｐｔ層を有す
る記録膜を、Ｐｔ層が下地層に接するように基板上に成
膜して成る光磁気記録媒体に於いて、前記下地層として
ＺｎＯを用いるとともに、該ＺｎＯに、Ｎ，Ｃ，Ｂｅ，
Ｂ，Ｓｉ，Ｐ，Ｓ，Ｖ，Ｃｒ，Ｍｎ，Ｃｕ，Ｇｅ，Ｒ
ｕ，Ｒｈ，Ｐｄ，Ｒｅ，Ｏｓ，Ｉｒ，Ｆｅ，Ｃｏ，Ｎｉ
から選ばれる少なくとも１種類の元素を含有させた光磁
気記録媒体である。The present invention provides a magneto-optical recording medium comprising a recording film having a Pt layer formed on a substrate so that the Pt layer is in contact with the underlayer. ZnO is used, and N, C, Be,
B, Si, P, S, V, Cr, Mn, Cu, Ge, R
u, Rh, Pd, Re, Os, Ir, Fe, Co, Ni
A magneto-optical recording medium containing at least one element selected from
【０００６】上記に於いて、下地層であるＺｎＯに添加
されるべきＮ，Ｃ，Ｂｅ，等の元素の添加量は、０〜４
０％程度（０％は含まない）、好ましくは３〜４０％程
度である。即ち、４０％を越えると、図３に示すＺｎＯ
の構造が壊れるため、『〔１１１〕方向から見たＰｔと
同様に密に並ばせる』という所期の目的を達成できず、
一方、３％未満では、下地層の原子間距離をＰｔの原子
間距離である2.8 〔Å〕に近づけるという効果を十分に
達成できない。なお、添加されるべき元素は、複数種類
であってもよい。また、添加される元素により置換され
る元素は、Ｚｎ，Ｏの何れであってもよい。In the above, the added amount of the elements such as N, C, Be, etc. to be added to ZnO which is the underlayer is 0-4.
It is about 0% (not including 0%), preferably about 3 to 40%. That is, when it exceeds 40%, ZnO shown in FIG.
Since the structure of is broken, it is not possible to achieve the intended purpose of "lining up as closely as Pt seen from the [111] direction".
On the other hand, if it is less than 3%, the effect of bringing the interatomic distance of the underlayer closer to 2.8 [Å] which is the interatomic distance of Pt cannot be sufficiently achieved. The elements to be added may be plural kinds. The element replaced by the added element may be Zn or O.
【０００７】また、下地層の上に成膜される前記記録膜
（垂直磁化膜）としては、Ｐｔ／遷移金属（Ｃｏ，Ｎｉ
等）の交互積層膜、或いは、Ｐｔ上にＲＥ−ＴＭ合金
（希土類−遷移金属合金）から成る磁性膜の形成された
垂直磁化膜等を用いることができる。即ち、基板上の下
地層（ＺｎＯ）に接する層がＰｔ層である記録膜であれ
ば、用いることができる。As the recording film (perpendicular magnetization film) formed on the underlayer, Pt / transition metal (Co, Ni
Or the like), or a perpendicular magnetization film having a magnetic film made of RE-TM alloy (rare earth-transition metal alloy) formed on Pt. That is, a recording film in which the layer in contact with the underlayer (ZnO) on the substrate is a Pt layer can be used.
【０００８】なお、本発明の光磁気記録媒体に、従来の
他の構成、例えば、保護膜としての誘電体層、或いは、
多重反射によりカ−効果にファラデ−効果を相乗させる
ための反射層等、従来の他の構成を付加してもよいこと
は、従来と同様である。さらに、基板としても、従来と
同様に、ガラス、ポリカ−ボネ−ト（ＰＣ）、ポリメチ
ルメタクリレ−ト、エポキシ樹脂等を用いることができ
る。It should be noted that the magneto-optical recording medium of the present invention may be added to another conventional structure, for example, a dielectric layer as a protective film, or
As in the prior art, other conventional structures such as a reflective layer for synergizing the Faraday effect with the card effect by multiple reflection may be added. Further, as the substrate, glass, polycarbonate (PC), polymethylmethacrylate, epoxy resin or the like can be used as in the conventional case.
【０００９】[0009]
【作用】Ｐｔ層の接するべき下地層（ＺｎＯ）の形成時
に、前記の如くＮ，Ｃ等より選ばれる元素を前記の量添
加すると、結晶構造はＺｎＯの本来の構造と同様で、且
つ、添加された元素によりＺｎ又はＯの一部が置換され
る。これにより、原子間距離が小さくなり、2.8 〔Å〕
（Ｐｔの原子間距離）に近づく。このため、下地層（Ｚ
ｎＯ）の上に形成されるＰｔ層は、積層の初期から密に
並び易くなる。即ち、保磁力が向上する。When the above-mentioned amount of the element selected from N, C, etc. is added at the time of forming the underlying layer (ZnO) to be in contact with the Pt layer, the crystal structure is similar to the original structure of ZnO, and the addition is made. Part of Zn or O is replaced by the element thus formed. This reduces the interatomic distance to 2.8 [Å]
It approaches (Pt interatomic distance). Therefore, the underlayer (Z
The Pt layer formed on (nO) tends to be densely arranged from the initial stage of stacking. That is, the coercive force is improved.
【００１０】[0010]
【実施例】以下、本発明の実施例を説明する。図１は実
施例の光磁気ディスクの断面の一部を模式的に示し、図
２は上記光磁気ディスクの作成に用いるスパッタリング
装置の構成を示す。また、図３は上記光磁気ディスクの
下地層（ＺｎＯＮ）と同様の結晶構造のＺｎＯの結晶構
造を示す。EXAMPLES Examples of the present invention will be described below. FIG. 1 schematically shows a part of the cross section of the magneto-optical disk of the embodiment, and FIG. 2 shows the structure of a sputtering apparatus used for producing the magneto-optical disk. Further, FIG. 3 shows the crystal structure of ZnO having the same crystal structure as the underlayer (ZnON) of the magneto-optical disk.
【００１１】図示の光磁気ディスクは、ポリカ−ボネ−
ト基板３の表面に、図２に示す装置によって、まず、Ｚ
ｎＯＮ（＝図３のＺｎＯの『Ｏ』の一部を『Ｎ』で置換
した構造）の下地層１を成膜し、次に、該ＺｎＯＮの下
地層１の表面に、Ｐｔ／Ｃｏの交互積層膜（垂直磁化
膜）２を成膜して成る。なお、基板３は、ガラスであっ
てもよい。The illustrated magneto-optical disk is a polycarbonate panel.
On the surface of the substrate 3, first, by the device shown in FIG.
An underlayer 1 of nON (= a structure in which a part of “O” of ZnO in FIG. 3 is replaced with “N”) is formed, and then Pt / Co alternates on the surface of the underlayer 1 of ZnON. A laminated film (perpendicular magnetization film) 2 is formed. The substrate 3 may be glass.
【００１２】図示の装置は、真空槽４と、真空槽４内の
上方に回転可能に配設された基板ホルダ７と、真空槽４
内を区分する遮蔽板５とを有し、電源８によって供給さ
れるＲＦ又はＤＣの電力により、スパッタリングを行う
装置である。なお、基板ホルダ７の回転速度は制御可能
であり、また、上記の基板３は、基板ホルダ７の下面
に、回転の軸心から偏心して保持されている。スパッタ
リングのタ−ゲット６は、真空槽４内に於いて上記遮蔽
板５により区分される各空間内下方の各保持板に各々保
持される。タ−ゲットとしては、下地層１の成膜時には
Ｚｎ又はＺｎＯが、Ｐｔ／Ｃｏ交互積層膜の成膜時には
Ｐｔ及びＣｏが、それぞれ用いられる。また、スパッタ
リングのガスは、ボンベ９から弁及び配管等を介して供
給される。The illustrated apparatus includes a vacuum chamber 4, a substrate holder 7 rotatably disposed above the vacuum chamber 4, and a vacuum chamber 4.
It is a device that has a shielding plate 5 that divides the inside, and that performs sputtering by RF or DC power supplied from a power supply 8. The rotation speed of the substrate holder 7 can be controlled, and the substrate 3 is held on the lower surface of the substrate holder 7 eccentrically from the axis of rotation. The sputtering target 6 is held in the vacuum chamber 4 by each holding plate below each space partitioned by the shielding plate 5. As the target, Zn or ZnO is used when the underlayer 1 is formed, and Pt and Co are used when the Pt / Co alternating laminated film is formed. Further, the gas for sputtering is supplied from the cylinder 9 through a valve, a pipe and the like.
【００１３】下地層１としてＺｎＯＮを成膜する場合に
は、 (1)タ−ゲットとしてＺｎを用い、且つ、ガスとし
てＡｒ＋Ｏ2 及びＮ2 ガスを用いる方法と、 (2)タ−ゲ
ットとしてＺｎＯを用い、且つ、ガスとしてＡｒ又はＡ
ｒ＋Ｏ2 及びＮ2 ガスを用いる方法とがある。When depositing ZnON as the underlayer 1, (1) Zn is used as the target and Ar + O 2 and N 2 gas are used as the gas, and (2) ZnO is used as the target. And using Ar or A as the gas
There is a method of using r + O 2 and N 2 gas.
【００１４】このようにしてＺｎＯＮを成膜すると、図
３の『Ｏ』の一部が『Ｎ』で置換された構造のＺｎＯ
Ｎ、即ち、ＺｎＯの構造である六方晶のウルツ鉱型構造
（〔００１〕方向から見ると、面心立方構造の〔１１
１〕方向から見た場合と同様に密に並ぶ構造）と同様の
構造のＺｎＯＮの下地層１が形成される。該ＺｎＯＮの
原子間距離は、ＺｎＯの原子間距離である3.25〔Å〕よ
りも小さく、Ｐｔの原子間距離である 2.8〔Å〕に近く
なっている。これは、Ｎの原子半径が 0.9〔Å〕であ
り、Ｏの原子半径である1.32〔Å〕よりも小さいためで
ある。このため、ＺｎＯＮの下地層１の上に形成される
Ｐｔ層は、積層の初期から密に並び、その結晶性・配向
性が向上する。したがって、Ｐｔ／Ｃｏ交互積層膜の保
磁力が増大し、より一層の高密度記録が可能となる。When the ZnON film is formed in this manner, ZnO having a structure in which a part of "O" in FIG. 3 is replaced with "N"
N, that is, the hexagonal wurtzite structure that is the structure of ZnO (when viewed from the [001] direction, the [11]
1] A ZnON underlayer 1 having the same structure as the densely arranged structure as viewed from the direction 1) is formed. The interatomic distance of ZnON is smaller than the interatomic distance of ZnO, which is 3.25 [Å], and is close to the interatomic distance of Pt, which is 2.8 [Å]. This is because the atomic radius of N is 0.9 [Å], which is smaller than the atomic radius of O, which is 1.32 [Å]. Therefore, the Pt layers formed on the ZnON underlayer 1 are closely arranged from the initial stage of stacking, and their crystallinity and orientation are improved. Therefore, the coercive force of the Pt / Co alternating laminated film is increased, and higher density recording is possible.
【００１５】上記では、ＺｎＯの『Ｏ』の一部を『Ｎ』
で置換しているが、Ｎ2 ガスに代えて、ＣＨ4 ガスを用
いると、ＺｎＯの『Ｏ』の一部が『Ｃ』で置換される。
この場合にも、上記と同様の原理により、上記と同様の
効果を得る。また、上記では、タ−ゲットとしてＺｎ又
はＺｎＯを用いているが、これらのタ−ゲットに、Ｂ
ｅ，Ｂ，Ｓｉ，Ｐ，Ｓ，Ｖ，Ｃｒ，Ｍｎ，Ｃｕ，Ｇｅ，
Ｒｕ，Ｒｈ，Ｐｄ，Ｒｅ，Ｏｓ，Ｉｒ，Ｆｅ，Ｃｏ，Ｎ
ｉから選ばれる１種類以上の元素のペレットを載せた
り、又は、これらの元素を添加すると、ＺｎＯの『Ｚ
ｎ』の一部が、これらの元素と置換されて、上記と同様
の効果を得る。In the above, a part of "O" of ZnO is replaced with "N".
However, if CH 4 gas is used instead of N 2 gas, a part of “O” of ZnO is replaced with “C”.
Also in this case, the same effect as above can be obtained by the same principle as above. Further, in the above, Zn or ZnO is used as the target, but B is added to these targets.
e, B, Si, P, S, V, Cr, Mn, Cu, Ge,
Ru, Rh, Pd, Re, Os, Ir, Fe, Co, N
When a pellet of one or more elements selected from i is placed or these elements are added, the ZnO “Z
Part of “n” is replaced with these elements, and the same effect as described above is obtained.
【００１６】また、上記では、垂直磁化膜（記録膜）と
してＰｔ／Ｃｏの交互積層膜を用いた場合を示している
が、下地層１に接する層がＰｔ層であれば、本発明を適
用できる。例えば、下地層の上にＰｔ層を成膜し、その
上にＲＥ−ＴＭ合金層を成膜した構造であってもよい。
なお、Ｐｔ／Ｃｏの交互積層膜の膜厚、その上に形成さ
れる保護膜については従来と同様である。Further, although the case where the Pt / Co alternating laminated film is used as the perpendicular magnetization film (recording film) has been described above, the present invention is applied when the layer in contact with the underlayer 1 is the Pt layer. it can. For example, the structure may be such that the Pt layer is formed on the underlayer and the RE-TM alloy layer is formed thereon.
The film thickness of the Pt / Co alternating laminated film and the protective film formed thereon are the same as in the conventional case.
【００１７】[0017]
【発明の効果】本発明では、下地層（ＺｎＯ）の形成時
に、Ｎ，Ｃ，Ｂｅ，Ｂ，Ｓｉ，Ｐ，Ｓ，Ｖ，Ｃｒ，Ｍ
ｎ，Ｃｕ，Ｇｅ，Ｒｕ，Ｒｈ，Ｐｄ，Ｒｅ，Ｏｓ，Ｉ
ｒ，Ｆｅ，Ｃｏ，Ｎｉ等から選ばれた少なくとも１種類
の元素により、Ｚｎ又はＯの一部が置換される。これに
より、結晶構造がＺｎＯと同様（＝Ｐｔと同様）で、且
つ、原子間距離がＰｔの原子間距離と同程度の下地層を
得る。このため、下地層の上に形成されるＰｔ層（＝垂
直磁化膜の構成要素）も、積層の初期から綺麗に密に並
び、結晶性及び配向性が向上する。即ち、大きな保磁力
を得ることができ、高密度記録が可能となる。According to the present invention, when the underlayer (ZnO) is formed, N, C, Be, B, Si, P, S, V, Cr and M are formed.
n, Cu, Ge, Ru, Rh, Pd, Re, Os, I
Part of Zn or O is replaced by at least one kind of element selected from r, Fe, Co, Ni and the like. As a result, an underlayer having a crystal structure similar to that of ZnO (= similar to Pt) and an interatomic distance of about the same as the interatomic distance of Pt is obtained. Therefore, the Pt layer (= the constituent element of the perpendicular magnetization film) formed on the underlayer is neatly and densely arranged from the initial stage of stacking, and the crystallinity and orientation are improved. That is, a large coercive force can be obtained and high density recording can be performed.
【図１】実施例の光磁気ディスクの断面構造を模式的に
示す説明図である。FIG. 1 is an explanatory diagram schematically showing a cross-sectional structure of a magneto-optical disk of an example.
【図２】上記光磁気ディスクを作成するためのスパッタ
リング装置の説明図である。FIG. 2 is an explanatory diagram of a sputtering device for producing the magneto-optical disk.
【図３】ＺｎＯの結晶構造を示す説明図である。FIG. 3 is an explanatory diagram showing a crystal structure of ZnO.
【図４】従来の光磁気ディスクの断面構造を模式的に示
す説明図である。FIG. 4 is an explanatory diagram schematically showing a cross-sectional structure of a conventional magneto-optical disk.
１ 下地層（ＺｎＯＮ）， ２ Ｐｔ／Ｃｏ交互積
層膜，３ 基板，1 underlayer (ZnON), 2 Pt / Co alternating laminated film, 3 substrate,
Claims (1)
上の下地層に接するように成膜して成る光磁気記録媒体
に於いて、 前記下地層としてＺｎＯを用いるとともに、該ＺｎＯ
に、Ｎ，Ｃ，Ｂｅ，Ｂ，Ｓｉ，Ｐ，Ｓ，Ｖ，Ｃｒ，Ｍ
ｎ，Ｃｕ，Ｇｅ，Ｒｕ，Ｒｈ，Ｐｄ，Ｒｅ，Ｏｓ，Ｉ
ｒ，Ｆｅ，Ｃｏ，Ｎｉから選ばれる少なくとも１種類の
元素を含有させたことを特徴とする光磁気記録媒体。1. A magneto-optical recording medium comprising a recording film having a Pt layer, the Pt layer being in contact with an underlayer on a substrate, wherein ZnO is used as the underlayer, and the ZnO is used.
, N, C, Be, B, Si, P, S, V, Cr, M
n, Cu, Ge, Ru, Rh, Pd, Re, Os, I
A magneto-optical recording medium containing at least one element selected from r, Fe, Co and Ni.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03357842A JP3113358B2 (en) | 1991-12-25 | 1991-12-25 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03357842A JP3113358B2 (en) | 1991-12-25 | 1991-12-25 | Magneto-optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05174436A true JPH05174436A (en) | 1993-07-13 |
| JP3113358B2 JP3113358B2 (en) | 2000-11-27 |
Family
ID=18456209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03357842A Expired - Fee Related JP3113358B2 (en) | 1991-12-25 | 1991-12-25 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3113358B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595636A2 (en) * | 1992-10-29 | 1994-05-04 | Canon Kabushiki Kaisha | Magneto-optical recording medium |
| GB2306751A (en) * | 1995-10-31 | 1997-05-07 | Samsung Electronics Co Ltd | Phase change type optical medium |
| US7054087B2 (en) * | 2001-09-17 | 2006-05-30 | Kabushiki Kaisha Toshiba | Magnetic recording-reproducing apparatus |
-
1991
- 1991-12-25 JP JP03357842A patent/JP3113358B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0595636A2 (en) * | 1992-10-29 | 1994-05-04 | Canon Kabushiki Kaisha | Magneto-optical recording medium |
| EP0595636A3 (en) * | 1992-10-29 | 1994-10-12 | Canon Kk | Magneto-optical recording medium. |
| US5521006A (en) * | 1992-10-29 | 1996-05-28 | Canon Kabushiki Kaisha | Magneto-optical recording medium |
| GB2306751A (en) * | 1995-10-31 | 1997-05-07 | Samsung Electronics Co Ltd | Phase change type optical medium |
| US5718961A (en) * | 1995-10-31 | 1998-02-17 | Samsung Electronics Co., Ltd. | Phase change type optical disk |
| GB2306751B (en) * | 1995-10-31 | 2000-04-26 | Samsung Electronics Co Ltd | Phase change type optical disk |
| US7054087B2 (en) * | 2001-09-17 | 2006-05-30 | Kabushiki Kaisha Toshiba | Magnetic recording-reproducing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3113358B2 (en) | 2000-11-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6893746B1 (en) | Magnetic recording medium with high thermal stability, method for producing the same, and magnetic recording apparatus | |
| US5792564A (en) | Perpendicular recording medium and magnetic recording apparatus | |
| US4992336A (en) | Magneto-optical recording medium | |
| JPH05174436A (en) | Magneto-optical recording medium | |
| JP3133443B2 (en) | Magneto-optical recording medium | |
| JP3150401B2 (en) | Perpendicular magnetization film and magnetic recording medium | |
| JPH09501790A (en) | Magneto-optical recording medium | |
| JPH05189824A (en) | Manufacture of magneto-optical element | |
| JPH0317813A (en) | Magnetic recording medium | |
| JPH0660452A (en) | Magneto-optical recording medium | |
| JP2825871B2 (en) | Magneto-optical recording medium and method of manufacturing the same | |
| JP3093389B2 (en) | Method of manufacturing magneto-optical memory device | |
| JP2945493B2 (en) | Magneto-optical recording system | |
| JP3237977B2 (en) | Magneto-optical recording medium | |
| JP2864957B2 (en) | Method for manufacturing magneto-optical recording medium | |
| JP2726298B2 (en) | Magneto-optical recording method | |
| JP2793083B2 (en) | Magneto-optical recording medium | |
| JP2902872B2 (en) | Magneto-optical recording medium | |
| JP2001229532A (en) | Method of forming thin film, method of manufacturing magnetic recording medium, and magnetic recording device | |
| JPH01243225A (en) | Magnetic recording medium | |
| JPS61280054A (en) | Photomagnetic recording medium | |
| JP2002074635A (en) | Information recording medium and information recording device using the same | |
| JP2002092839A (en) | Magnetic recording medium and magnetic recording device provided with the same | |
| JPH05128600A (en) | Magneto-optical recording medium | |
| JPH03228238A (en) | Magneto-optical recording medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |