JPH05166730A - Semiconductor processing equipment - Google Patents

Abstract

PURPOSE:To suppress adverse influences of a purge gas on film formation on a wafer substrate and to prevent particles from being generated by forming a means to hold workpieces out of a high-melting point metal of high adhesiveness with tungsten in a title equipment which makes a treatment by holding a workpiece. CONSTITUTION:Clamps 8, 10, 12 as means to hold a wafer W that is the workpiece are formed out of a high-melting point metal. Since the clamps 8, 10, 12 are formed out of a high-melting point metal, a tungsten film and the clamps 8, 10, 12 show high adhesiveness even when the tungsten film is formed over the clamps 8, 10, 12 during film forming work, so that the tungsten film does not peel off the clamps 8, 10, 12. Therefore, the tungsten film neither turns into particles nor gives adverse influences on formation of a tungsten film on a wafer substrate W. Thus, a high-quality tungsten film can be formed over the wafer substrate W.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for performing a CVD process on an object to be processed such as a silicon wafer.

[0002]

2. Description of the Related Art As a semiconductor manufacturing apparatus, for example, CVD
When a tungsten film is formed on a wafer substrate or the like to be processed using the apparatus, a wafer clamp mechanism is used to hold the wafer to be processed.
The wafer clamp mechanism (hereinafter referred to as a clamp) is used to securely fix the wafer substrate and to stably bring the wafer substrate into thermal contact with the wafer susceptor. Such a clamp is widely used as a holding means in a semiconductor device such as a CVD device, a sputtering device or an etching device.

Here, for example, a tungsten film formed on a wafer substrate by blanket CVD has poor adhesion to the wafer substrate and is very easily peeled off. Therefore, when forming a tungsten film on a wafer substrate,
A separate adhesion layer such as TiN is required.

[0004]

By the way, when a tungsten film is formed on a portion other than the wafer substrate, for example, a clamp, the tungsten film is peeled off. Therefore, basically, the tungsten film is formed on the portion other than the wafer. Not to form a film.

However, in particular, the clamp for pressing down the wafer is inevitably formed with a tungsten film because it is closely arranged so as to fix the clamp by closely adhering to a part of the wafer to be processed. I will end up. Therefore, conventionally, in order to prevent this, a purge gas is caused to flow between the clamp and the wafer substrate so that the tungsten film is not formed on the relevant portion of the clamp.

However, in such a method of flowing the purge gas, not only the structure of the semiconductor manufacturing apparatus becomes complicated, but also the purge gas adversely affects the formation of the tungsten film on the wafer substrate. Therefore, there is a problem that it is difficult to form a good tungsten film on the wafer substrate. Further, there is a drawback that the tungsten film formed on the clamp is peeled off to become particles, and the particles adversely affect the formation of the tongue ten film on the wafer substrate.

Since the present invention does not need to flow the above-mentioned purge gas, the structure can be simplified, the adverse effect of the purge gas on the film formation on the wafer substrate need not be considered, and particles are not generated. It is an object to provide a semiconductor device.

[0008]

In order to achieve the above object, in the present invention, a semiconductor manufacturing apparatus is a means for holding an object to be processed in a semiconductor manufacturing apparatus that holds an object to be processed. This is achieved by forming the material of (1) as a refractory metal having good adhesion to tungsten.

Preferably, the material for the means for holding the object to be treated is TiN, TiON or TiW.

Further, according to the present invention, in a semiconductor manufacturing apparatus for holding and processing an object to be processed, the means for holding the object to be processed can be formed by coating a refractory metal having a good adhesion with tungsten. ..

Further, as the refractory metal with which the object to be treated is coated, preferably TiN or TiO.
N or TiW is used. Here, the refractory metal in the present invention refers to the refractory metal itself (for example, W) and a compound of the refractory metal.

[0012]

If the surface of the means for holding the object to be processed such as a clamp has good adhesion to the tungsten film such as TiN, the tungsten film formed on this holding means will not come off. Therefore, the tungsten film that had been formed on the clamp peels off and becomes particles (fine particles).
As a result, the quality of the semiconductor product will not be deteriorated by adhering to, for example, a wafer substrate as an object to be processed.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described in detail below with reference to FIGS. It should be noted that the examples described below are suitable specific examples of the present invention, and therefore, various technically preferable limitations are attached thereto, but the scope of the present invention particularly limits the present invention in the following description. Unless otherwise stated, the present invention is not limited to these modes.

1 and 2 show a first embodiment of the present invention, and FIG. 1 shows a CVD apparatus which is a preferred embodiment of the semiconductor manufacturing apparatus of the present invention. A plunger 1 is housed in the sidewall 2 so as to be able to reciprocate up and down, and a gas supply ring 4 is arranged below the plunger 1. On the lower side of the susceptor 6, a wafer substrate W, which is also called a wafer, is supported by three clamps 8, 10, 12 as shown in FIG. The three clamps 8, 10, 12 are mounted on the clamp support 14 at 120
They are arranged in radial directions at every degree. Clamp support 1
4 can be moved up and down in the direction of arrow A as shown in FIG. As a result, the wafer substrate W is clamped to the clamps 8, 10,
12 to fix to the susceptor 6 or
Can be separated from.

The clamps 8, 10, 12 are finger-shaped and can be easily attached to and detached from the clamp support portion 14. That is, each of the clamps 8, 10 and 12 can be easily replaced independently. Here, the clamps 8 and 1 as a means for holding the wafer W which is the object to be processed.
0 and 12 are made of refractory metal. As the refractory metal, TiN, TiW, TiON, W or the like having good adhesion to the bracket tungsten film can be preferably used.

From the gas supply ring 4, a gas of a compound consisting of elements forming a film to be formed on the wafer substrate W, for example, WF ₆ , H ₂ , Ar, SiH ₄ , N ₂ etc. is used as the side wall 2. It is supplied into a space 22 surrounded by the casing 20 and the susceptor 6. As a result, a blanket tungsten film is formed on the wafer substrate W by the blanket CVD method.

During this film forming operation, the clamps 8, 10, 1
Since 2 is made of a high melting point metal, even if the tungsten film is formed on the clamps 8, 10, 12, the adhesion between the tungsten film and the clamps 8, 10, 12 is good.
The tungsten film does not come off from the clamps 8, 10, 12. Therefore, the tungsten film does not become particles and does not adversely affect the formation of the tungsten film on the wafer substrate W. Therefore, a good quality tungsten film can be formed on the wafer substrate W. The lamps 16 and 18 irradiate light energy in order to carry out the photo CVD method, and are, for example, mercury lamps.

3 and 4 show a second embodiment of the present invention. In the first embodiment shown in FIG. 2, the wafer substrate W is supported at three points by three clamps 8, 10, 12. On the other hand, the CVD of the second embodiment shown in FIGS.
In the apparatus, the wafer substrate W is detachably fixed to the susceptor 106 by a clamp 108. The clamp 108 is a full-circumferential type clamp that can be fixed by abutting on the entire circumference of the wafer substrate W.

A gas supply port 104 is formed at the center of the upper portion of the side wall 107. This gas supply port 104
From the side wall 1 through the shower head 160
A predetermined compound gas is supplied to the space inside 07. A casing 120 is connected to the sidewall 107, and lamps 116 and 118 for performing the photo CVD method are provided in the casing 120.

The drive unit 140 is for lifting or lowering the wafer substrate W in the direction of arrow B. Drive unit 14
6 supports the susceptor 106, and the susceptor 10
This is for moving 6 in the direction of arrow C.

A full-circle ring-shaped clamp 108 of FIG.
Is made of a refractory metal. The refractory metal is preferably TiN, TiW, TiON, W or the like, which has good adhesion to the blanket tungsten film. The clamps 8, 10, 12 in the first embodiment may be made of a suitable material, for example, ceramic, alumina, etc., and a refractory metal having good adhesion to tungsten may be coated thereon. Similarly, the full-circumferential clamp 108 in the second embodiment may be made of a suitable material, such as ceramic, alumina, etc., on which a refractory metal is coated. Further, as described above, according to the means for coating the clamp with the refractory metal, in the case of the omnidirectional clamp 108 as in the second embodiment, the omnidirectional clamp itself has a complicated shape and a large volume. The manufacturing is easier and the cost can be reduced than the case where the material is a refractory metal. Moreover, it is possible to use the existing full-circumferential clamp. As these refractory metals, for example, those having adhesion to the tungsten film such as TiN, TiW, TiON, W can be adopted. The thickness of the coating film is, for example, several micrometers. The wafer holding means used in the present invention is not limited to the clamp type for holding the wafer as illustrated. It can fix the wafer,
As long as it can coat a refractory metal having good adhesion with tungsten, it can be adopted regardless of its shape or structure.

In each of the above-mentioned embodiments, the photo-CVD apparatus has been described as an example, but the present invention can be applied to means for holding an object to be processed in another semiconductor manufacturing apparatus.
For example, the present invention can be applied to holding means such as a sputtering device, a thermal CVD device, a plasma CVD device and the like.

[0023]

As described above, according to the present invention, it is necessary to flow the purge gas because the means for holding the object to be treated is made of the refractory metal or the holding means is coated with the refractory metal. In addition, the structure of the semiconductor manufacturing apparatus can be simplified. In addition, it is not necessary to consider the adverse effect of the purge gas on the film formation on an object to be processed such as a wafer substrate. Further, the film formed on the holding means for the object to be processed does not peel off, and no particles are generated. Therefore,
A high-quality film can be formed on the object to be processed, the quality of the semiconductor material can be improved, and the product yield can be improved.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a CVD apparatus that is a first embodiment of a semiconductor manufacturing apparatus of the present invention.

FIG. 2 is a diagram showing a wafer substrate and a clamp viewed from an arrow X of the semiconductor manufacturing apparatus in FIG.

FIG. 3 is a schematic diagram of a CVD apparatus that is a second embodiment of the semiconductor manufacturing apparatus of the present invention.

FIG. 4 is a diagram showing a clamp and a wafer substrate according to a second embodiment.

[Explanation of symbols]

 1 Plunger 2 Sidewall 4 Gas Supply Ring 6 Susceptor 8, 10, 12 Clamp W Wafer Substrate

Claims (4)

[Claims] 1. A semiconductor manufacturing apparatus for holding an object to be processed for processing, wherein the means for holding the object to be processed is formed of a refractory metal having good adhesion to tungsten. .. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the material of the holding means is TiN, TiON, or TiW. 3. A semiconductor manufacturing apparatus for holding an object to be processed for processing, wherein the means for holding the object is coated with a refractory metal having good adhesion to tungsten. 4. The semiconductor manufacturing apparatus according to claim 3, wherein the refractory metal is TiN, TiON, or TiW.