JPH051627B2 - - Google Patents

Info

Publication number
JPH051627B2
JPH051627B2 JP59190041A JP19004184A JPH051627B2 JP H051627 B2 JPH051627 B2 JP H051627B2 JP 59190041 A JP59190041 A JP 59190041A JP 19004184 A JP19004184 A JP 19004184A JP H051627 B2 JPH051627 B2 JP H051627B2
Authority
JP
Japan
Prior art keywords
solar cell
gaas
substrate
electrode
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP59190041A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6167968A (ja
Inventor
Hisanobu Matsutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59190041A priority Critical patent/JPS6167968A/ja
Publication of JPS6167968A publication Critical patent/JPS6167968A/ja
Publication of JPH051627B2 publication Critical patent/JPH051627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59190041A 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子 Granted JPS6167968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59190041A JPS6167968A (ja) 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59190041A JPS6167968A (ja) 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子

Publications (2)

Publication Number Publication Date
JPS6167968A JPS6167968A (ja) 1986-04-08
JPH051627B2 true JPH051627B2 (cs) 1993-01-08

Family

ID=16251371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59190041A Granted JPS6167968A (ja) 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子

Country Status (1)

Country Link
JP (1) JPS6167968A (cs)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414974A (en) * 1987-07-08 1989-01-19 Mitsubishi Electric Corp Inverse conductive solar battery cell
JPH02135786A (ja) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp 太陽電池セル
DE68923061T2 (de) * 1988-11-16 1995-11-09 Mitsubishi Electric Corp Sonnenzelle.
US4915744A (en) * 1989-02-03 1990-04-10 Applied Solar Energy Corporation High efficiency solar cell
JPH0793454B2 (ja) * 1991-04-04 1995-10-09 株式会社日立製作所 太陽電池及びそれを用いた太陽電池モジュール
DE19845658C2 (de) * 1998-10-05 2001-11-15 Daimler Chrysler Ag Solarzelle mit Bypassdiode
US6635507B1 (en) 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
FR2863775B1 (fr) * 2003-12-15 2006-04-21 Photowatt Internat Sa Module photovoltaique avec un dispositif electronique dans l'empilage lamine.
JP4827471B2 (ja) * 2005-09-09 2011-11-30 シャープ株式会社 バイパス機能付き太陽電池およびその製造方法
JP5201659B2 (ja) * 2007-12-26 2013-06-05 シャープ株式会社 太陽電池セル用バイパスダイオードの製造方法
US8878048B2 (en) * 2010-05-17 2014-11-04 The Boeing Company Solar cell structure including a silicon carrier containing a by-pass diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2714243A1 (de) * 1977-03-30 1978-10-05 Siemens Ag Duennfilm-halbleiter-solarzelle
JPS5613778A (en) * 1979-07-16 1981-02-10 Shunpei Yamazaki Photoelectric converter and its preparation

Also Published As

Publication number Publication date
JPS6167968A (ja) 1986-04-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees