JPH051612B2 - - Google Patents

Info

Publication number
JPH051612B2
JPH051612B2 JP18029683A JP18029683A JPH051612B2 JP H051612 B2 JPH051612 B2 JP H051612B2 JP 18029683 A JP18029683 A JP 18029683A JP 18029683 A JP18029683 A JP 18029683A JP H051612 B2 JPH051612 B2 JP H051612B2
Authority
JP
Japan
Prior art keywords
chamber
substrate
dry etching
etching apparatus
preparatory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP18029683A
Other languages
Japanese (ja)
Other versions
JPS6074530A (en
Inventor
Sakae Kono
Hiroyuki Nozaki
Minoru Soraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18029683A priority Critical patent/JPS6074530A/en
Publication of JPS6074530A publication Critical patent/JPS6074530A/en
Publication of JPH051612B2 publication Critical patent/JPH051612B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3435Target holders (includes backing plates and endblocks)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、ドライエツチング装置に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a dry etching apparatus.

〔発明の背景〕[Background of the invention]

エツチングガスをグロー放電によりプラズマ化
し、このプラズマにより基板にエツチング処理を
施こす、つまり、ドライプロセスにて基板にエツ
チング処理を施こすドライエツチング装置の重要
な用途の一つに半導体集積回路等の微小固体素子
の製造における微細パターンの形成がある。この
ため、エツチング処理される基板表面には、この
パターンに対応してフオトレジストが塗布され
る。このフオトレジストは、基板のエツチング処
理後は不要であり、その表面から除去される。し
たがつて、このようなドライエツチング装置で
は、基板がドライプロセスにてエツチング処理さ
れる処理室と、この処理室に真空開閉手段を介し
て具設される予備室と共に、エツチング処理後の
基板表面からフオトレジストを除去するアツシヤ
ー室を設ける必要がある。
One of the important uses of dry etching equipment is to convert etching gas into plasma through glow discharge, and use this plasma to perform etching on the substrate.In other words, the dry etching process is performed on the substrate in a dry process. There is the formation of fine patterns in the manufacture of solid-state devices. For this reason, a photoresist is applied to the surface of the substrate to be etched in accordance with this pattern. This photoresist is not needed after the substrate is etched and is removed from its surface. Therefore, in such a dry etching apparatus, there is a processing chamber in which a substrate is etched by a dry process, a preliminary chamber provided in this processing chamber via a vacuum opening/closing means, and a dry etching process for etching the substrate surface after etching. It is necessary to provide an atsher chamber to remove the photoresist from the photoresist.

従来のドライエツチング装置では、予備室が具
設された処理室とアツシヤー室とが別々の場所に
設けられており、エツチング処理が完了した基板
は処理室から予備室を経て大気中に一旦取出さ
れ、その後、アツシヤー室に搬入されてその表面
からフオトレジストが除去されている。
In conventional dry etching equipment, a processing chamber equipped with a preliminary chamber and an assher chamber are provided in separate locations, and the substrate that has been etched is once taken out from the processing chamber to the atmosphere through the preliminary chamber. Thereafter, the photoresist is removed from the surface of the photoresist.

したがつて、このようなドライエツチング装置
では、次のような欠点があつた。
Therefore, such a dry etching apparatus has the following drawbacks.

(1) 予備室が具設された処理室とアツシヤー室と
が別々の場所に設けられ、処理室、予備室、ア
ツシヤー室がそれぞれ床を占有するため、装置
の占有面積が増大する。
(1) The processing chamber, which is equipped with a preliminary chamber, and the accumulator chamber are provided in separate locations, and the processing chamber, preliminary chamber, and accumulator chamber each occupy a floor, which increases the area occupied by the apparatus.

(2) 処理室からアツシヤー室への搬送途中におい
て、基板が大気にさらされるため、基板表面の
酸化や塵埃付着等が生じ、パターン精度が低下
する。
(2) During transportation from the processing chamber to the assher chamber, the substrate is exposed to the atmosphere, which causes oxidation and dust adhesion on the substrate surface, reducing pattern accuracy.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、予備室の占有床をアツシヤー
室と共有化することで、装置の占有床面積を減少
できるドライエツチング装置を提供することにあ
る。
SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching apparatus in which the floor area occupied by the apparatus can be reduced by sharing the floor occupied by the preparatory chamber with the atsher chamber.

〔発明の概要〕[Summary of the invention]

本発明は、処理室と、該処理室に真空開閉手段
を介して具設された予備室と、該予備室と連通し
てその下方に設けられたアツシヤー室とで構成
し、予備室に、基板カセツト取付具と遮断具とを
昇降可能に、基板搬送手段を部分回動可能にそれ
ぞれ内設したことを特徴とする。遮断具は、通常
連通している予備室とアツシヤー室とを、フオト
レジスト除去時に遮断するものである。アツシヤ
ー室を予備室の下方に設けることで、予備室の占
有床をアツシヤー室と共有化しようとするもので
ある。
The present invention comprises a processing chamber, a preparatory chamber provided in the processing chamber via a vacuum opening/closing means, and an assher chamber provided below the preparatory chamber in communication with the preparatory chamber. The present invention is characterized in that the substrate cassette mounting tool and the blocking device are provided internally so that they can be moved up and down, and the substrate conveyance means is partially rotatable. The shutoff device is used to shut off the preliminary chamber and the pusher chamber, which normally communicate with each other, when removing the photoresist. By providing the assher room below the auxiliary room, the auxiliary room and the auxiliary room share the floor occupied by the auxiliary room.

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例を第1図〜第3図により説明
する。
An embodiment of the present invention will be described with reference to FIGS. 1 to 3.

第1図〜第3図で、処理室10には、真空開閉
手段、例えば、ゲート弁20を介して予備室30
が具設されている。予備室30の下方には、予備
室30と連通してアツシヤー室40が設けられて
いる。予備室30には、基板カセツト取付具50
と遮断具51とが昇降可能に内設されている。遮
断具51は、予備室30の頂壁を貫通し予備室3
0の気密を保持して昇降装置52で昇降駆動され
る昇降ロツド53の下端に設けられ、この遮断具
51の下部に基板カセツト取付具50が設けられ
ている。基板カセツト60は、基板61を収納も
しくは取出しできるように、複数の溝が設けられ
ている。予備室30には、基板搬送手段、例え
ば、搬送ベルト70が部分回動可能、つまり、基
板カセツト60の下部側から基板61を収納、取
出し可能な位置と基板カセツト取付具50、遮断
具51の昇降を阻害しない位置との間で回動可
能、この場合は、水平位置と予備室30の側壁に
沿う位置との間で回動可能に内設されている。な
お、71は、搬送ベルト70の駆動用のモータ、
72は搬送ベルト70を部分回動させるアクチユ
エータである。また、アツシヤー室の容積は、基
板カセツト60を収容可能な容積である。アツシ
ヤー室には、プラズマによるフオトレジスト除去
のため処理用のガスを導入する手段やガスを排出
するための真空ポンプが接続されており、またガ
スをプラズマ化するための電極も設けられてい
る。これらは一般によく知られた構成なので、詳
細は省略する。
1 to 3, a preliminary chamber 30 is connected to the processing chamber 10 via a vacuum opening/closing means, for example, a gate valve 20.
is provided. An pusher chamber 40 is provided below the preliminary chamber 30 in communication with the preliminary chamber 30. In the preliminary room 30, a board cassette fixture 50 is installed.
and a shutoff tool 51 are installed inside so as to be movable up and down. The blocking device 51 penetrates the top wall of the preliminary chamber 30 and closes the preliminary chamber 3.
A substrate cassette fixture 50 is provided at the lower end of a lifting rod 53 that is driven up and down by a lifting device 52 while maintaining an airtight state. The substrate cassette 60 is provided with a plurality of grooves so that the substrates 61 can be stored or taken out. In the preliminary chamber 30, a substrate conveyance means, for example, a conveyor belt 70, is partially rotatable, that is, a position where the substrate 61 can be stored and taken out from the lower side of the substrate cassette 60, and a position where the substrate cassette mounting tool 50 and the blocking tool 51 are located. It is internally installed so that it can be rotated between a position that does not impede elevating and lowering, and in this case, between a horizontal position and a position along the side wall of the preliminary chamber 30. Note that 71 is a motor for driving the conveyor belt 70;
72 is an actuator that partially rotates the conveyor belt 70. Further, the volume of the assher chamber is such that the substrate cassette 60 can be accommodated therein. The atsher chamber is connected to a means for introducing a processing gas to remove the photoresist using plasma, a vacuum pump for discharging the gas, and is also provided with an electrode for converting the gas into plasma. Since these are generally well-known configurations, details will be omitted.

予備室30には、開口部31を経てフオトレジ
ストが塗布された基板61が搬入され、これによ
り、基板カセツト取付具50に取付けられている
基板カセツト60には、所定枚数の基板61が収
納される。その後、開口部31は、気密封止され
予備室30は処理室10と同程度の圧力まで減圧
排気される。このような減圧排気完了後、ゲート
弁20が開放され処理室10と連通した予備室3
0からは、昇降装置52で基板カセツト60を間
欠的に下降駆動し、アクチユエータ72で水平位
置にセツトされた搬送ベルト70のモータ71に
よる駆動並びに専用フオーク80の往復動により
所定枚数の基板61が基板カセツト60から取り
出されて処理室10に搬入される。処理室10へ
の基板61の搬入完了後、ゲート弁20は閉止さ
れ、基板61はドライプロセスにてエツチング処
理される。エツチング処理が完了した基板61
は、その後、上記の操作と逆操作により基板カセ
ツト60に回収される。このようにして基板61
のエツチング処理が全て完了し、この基板61の
基板カセツト60への回収が全て完了した時点
で、搬送ベルト70は、アクチユエータ72で水
平位置から予備室30の側壁に沿う位置まで回動
され、その後、基板カセツト60は昇降装置52
で下降させられる。この結果、第2図に破線で示
すように基板カセツト60は基板カセツト取付具
50に取付けられた状態でアツシヤー室40に収
納され、予備室30とアツシヤー室40との連通
は遮断具51が予備室30の底壁に、例えば、O
リング(図示省略)を介して当接することで気密
に遮断される。次に、通常行なわれているフオト
レジスト除去処理のようにアツシヤー室40に
CF4等の処理用のガスを導入するとともに、アツ
シヤー室40内を減圧排気して所定の処理圧力に
調整保持する。そして電極に高周波電力を印加
し、処理用のガスをプラズマ化する。これによ
り、プラズマ中の活性種とレジストとが化学反応
してレジストを除去する。レジスト除去後、高周
波電力の印加を停止するとともに処理ガスの供給
を停止し、アツシヤー室40内を予備室30と同
程度の圧力まで減圧排気する。この処理が完了し
た後は、昇降装置52で基板カセツト60は搬送
ベルト70の回動を阻害しない高さまで上昇させ
られ、一方、搬送ベルト70は、予備室30の側
壁に沿う位置から元の水平位置までアクチユエー
タ72で回動される。その後、基板カセツト60
の基板61は、昇降装置52で基板カセツト60
を間欠的に下降駆動し、モータ71で搬送ベルト
70を駆動することで開口部31を経て予備室3
0から搬出される。
Substrates 61 coated with photoresist are carried into the preliminary chamber 30 through the opening 31, and a predetermined number of substrates 61 are stored in the substrate cassette 60 attached to the substrate cassette fixture 50. Ru. Thereafter, the opening 31 is hermetically sealed and the preliminary chamber 30 is evacuated to a pressure comparable to that of the processing chamber 10. After completion of such depressurized exhaust, the gate valve 20 is opened and the preliminary chamber 3 communicates with the processing chamber 10.
0, the substrate cassette 60 is intermittently driven downward by the lifting device 52, and a predetermined number of substrates 61 are moved by the drive of the motor 71 of the conveyor belt 70 set in a horizontal position by the actuator 72 and the reciprocating movement of the dedicated fork 80. The substrate is taken out from the substrate cassette 60 and carried into the processing chamber 10. After loading the substrate 61 into the processing chamber 10, the gate valve 20 is closed and the substrate 61 is etched by a dry process. Substrate 61 after etching process has been completed
are then collected into the substrate cassette 60 by the reverse operation to the above-described operation. In this way, the substrate 61
When all of the etching processes have been completed and all of the substrates 61 have been collected into the substrate cassette 60, the conveyor belt 70 is rotated by the actuator 72 from a horizontal position to a position along the side wall of the preliminary chamber 30, and then , the substrate cassette 60 is moved by the lifting device 52.
It can be lowered by As a result, as shown by the broken line in FIG. 2, the board cassette 60 is housed in the assher chamber 40 while being attached to the board cassette fixture 50, and the communication between the preparatory chamber 30 and the assher chamber 40 is interrupted by the interrupter 51. On the bottom wall of the chamber 30, for example, O
They are airtightly shut off by contacting each other via a ring (not shown). Next, as in the usual photoresist removal process, the
A processing gas such as CF 4 is introduced, and the inside of the assher chamber 40 is evacuated to maintain a predetermined processing pressure. Then, high-frequency power is applied to the electrodes to turn the processing gas into plasma. As a result, the active species in the plasma and the resist undergo a chemical reaction to remove the resist. After removing the resist, the application of high frequency power is stopped, the supply of processing gas is stopped, and the inside of the assher chamber 40 is depressurized and evacuated to the same pressure as the preliminary chamber 30. After this process is completed, the substrate cassette 60 is raised by the lifting device 52 to a height that does not impede the rotation of the conveyor belt 70, while the conveyor belt 70 is returned from a position along the side wall of the preliminary chamber 30 to its original horizontal position. It is rotated by the actuator 72 to this position. After that, the board cassette 60
The substrate 61 is moved into a substrate cassette 60 by the lifting device 52.
is intermittently driven downward, and by driving the conveyor belt 70 with the motor 71, the preliminary chamber 3 is transported through the opening 31.
Exported from 0.

本実施例のドライエツチング装置では、次のよ
うな効果が得られる。
The dry etching apparatus of this embodiment provides the following effects.

(1) アツシヤー室を予備室の下方に設けているた
め、予備室の占有床をアツシヤー室と共有化で
き、装置の占有床面積を減少できる。
(1) Since the pusher room is located below the auxiliary room, the floor occupied by the auxiliary room can be shared with the pusher room, reducing the floor space occupied by the equipment.

(2) 処理室からアツシヤー室への搬送途中におい
て、基板が大気にさらされることがないため、
基板表面の酸化や塵埃付着等が生じるのを防止
できパターン精度の低下を防止できる。
(2) Since the substrate is not exposed to the atmosphere during transportation from the processing chamber to the accumulator chamber,
Oxidation and dust adhesion on the substrate surface can be prevented, and pattern accuracy can be prevented from deteriorating.

(3) 搬送ベルトを予備室に部分回動可能に内設し
ているため、予備室がコンパクトになり予備室
の減圧排気時間を短縮できスループツトを向上
できる。
(3) Since the conveyor belt is partially rotatably installed in the preliminary chamber, the preliminary chamber can be made compact, the time required to decompress and exhaust the preliminary chamber can be shortened, and throughput can be improved.

(4) 所定枚数の基板を基板カセツトに収納した状
態で基板表面からのフオトレジストの除去処理
を行うため、フオトレジスト除去処理時間を短
縮できスループツトを向上できる。
(4) Since the photoresist is removed from the substrate surface while a predetermined number of substrates are housed in the substrate cassette, the photoresist removal processing time can be shortened and throughput can be improved.

〔発明の効果〕〔Effect of the invention〕

本発明は、以上説明したように、処理室と、該
処理室に真空開閉手段を介して具設された予備室
と、該予備室と連通してその下方に設けられたア
ツシヤー室とで構成し、予備室に、基板カセツト
取付具と遮断具とを昇降可能に、基板搬送手段を
部分回動可能にそれぞれ内設したことで、予備室
を占有床をアツシヤー室と共有できるので、装置
の占有床面積を減少できる効果がある。
As explained above, the present invention is composed of a processing chamber, a preparatory chamber provided in the processing chamber via a vacuum opening/closing means, and an assher chamber provided below the preparatory chamber in communication with the preparatory chamber. However, by installing the board cassette mount and the interrupter in the preparatory room so that they can be raised and lowered, and the board transport means that can be partially rotated, the preparatory room can share the occupied floor with the accelerator room. This has the effect of reducing the occupied floor space.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明によるドライエツチング装置
の要部横断面図、第2図は、第1図のA−A矢視
断面図、第3図は、第1図のB−B矢視断面図で
ある。 10……処理室、20……ゲート弁、30……
予備室、40……アツシヤー室、50……基板カ
セツト取付具、51……遮断具、60……基板カ
セツト、61……基板、70……搬送ベルト。
FIG. 1 is a cross-sectional view of a main part of a dry etching apparatus according to the present invention, FIG. 2 is a cross-sectional view taken along the line A-A in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line B-B in FIG. It is a diagram. 10...processing chamber, 20...gate valve, 30...
Preliminary room, 40... Asshear room, 50... Board cassette fixture, 51... Blocker, 60... Board cassette, 61... Board, 70... Transport belt.

Claims (1)

【特許請求の範囲】 1 ドライプロセスにて基板がエツチング処理さ
れる処理室と、該処理室に真空開閉手段を介して
連通する予備室と、該予備室と連通してその下方
に設けられたアツシヤー室とで構成され、前記予
備室に、前記基板を保持する基板カセツト取付具
及び前記予備室とアツシヤー室間を遮断する遮断
具とを昇降可能に設け、かつ前記基板を搬送する
基板搬送手段を、前記基板の収納、取出し可能な
位置と前記基板カセツト取付具及び前記遮断具の
昇降を阻害しない位置との間で回動可能に設けた
ことを特徴とするドライエツチング装置。 2 前記遮断具を前記基板カセツト取付具の上方
に設けたことを特徴とする特許請求の範囲第1項
記載のドライエツチング装置。 3 前記基板搬送手段を搬送ベルトとした特許請
求の範囲第1項又は第2項記載のドライエツチン
グ装置。 4 前記アツシヤー室の容積を基板カセツトを収
容可能な容積とした特許請求の範囲第1項記載の
ドライエツチング装置。
[Scope of Claims] 1. A processing chamber in which a substrate is etched in a dry process, a preparatory chamber communicating with the processing chamber via a vacuum opening/closing means, and a preparatory chamber provided below the preparatory chamber in communication with the preparatory chamber. and an assher chamber, the preparatory chamber is provided with a substrate cassette fixture for holding the substrate and a blocking device for isolating between the preparatory chamber and the assher chamber so as to be movable up and down, and a substrate conveyance means for conveying the substrate. A dry etching apparatus characterized in that the dry etching apparatus is rotatably provided between a position where the substrate can be stored and taken out and a position where the substrate cassette mounting tool and the blocking tool do not hinder the lifting and lowering of the substrate cassette mounting tool and the blocking tool. 2. The dry etching apparatus according to claim 1, wherein the blocking device is provided above the substrate cassette fixture. 3. The dry etching apparatus according to claim 1 or 2, wherein the substrate conveying means is a conveying belt. 4. The dry etching apparatus according to claim 1, wherein the volume of the assher chamber is large enough to accommodate a substrate cassette.
JP18029683A 1983-09-30 1983-09-30 Dry etching device Granted JPS6074530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18029683A JPS6074530A (en) 1983-09-30 1983-09-30 Dry etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18029683A JPS6074530A (en) 1983-09-30 1983-09-30 Dry etching device

Publications (2)

Publication Number Publication Date
JPS6074530A JPS6074530A (en) 1985-04-26
JPH051612B2 true JPH051612B2 (en) 1993-01-08

Family

ID=16080724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18029683A Granted JPS6074530A (en) 1983-09-30 1983-09-30 Dry etching device

Country Status (1)

Country Link
JP (1) JPS6074530A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177073A (en) * 1992-12-07 1994-06-24 Nippon Ee S M Kk Etching apparatus

Also Published As

Publication number Publication date
JPS6074530A (en) 1985-04-26

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