JPH0516081B2 - - Google Patents
Info
- Publication number
- JPH0516081B2 JPH0516081B2 JP11454184A JP11454184A JPH0516081B2 JP H0516081 B2 JPH0516081 B2 JP H0516081B2 JP 11454184 A JP11454184 A JP 11454184A JP 11454184 A JP11454184 A JP 11454184A JP H0516081 B2 JPH0516081 B2 JP H0516081B2
- Authority
- JP
- Japan
- Prior art keywords
- cores
- thin film
- magnetic head
- element thin
- film magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000011162 core material Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910000702 sendust Inorganic materials 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、クロストーク、コンター効果および
コイル抵抗を低減したアナログ記録再生に好適な
多素子薄膜磁気ヘツドに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a multi-element thin film magnetic head suitable for analog recording and reproducing which reduces crosstalk, contour effects and coil resistance.
多素子薄膜磁気ヘツドとしては特開昭58−
212616号公報に示される様な構造が一般的であ
る。
As a multi-element thin film magnetic head, Japanese Patent Application Laid-Open No. 1986-
A structure as shown in Japanese Patent No. 212616 is common.
このヘツド構造は、デイジタル磁気記録の記録
専用に用いられ、電子スチルカメラの様にアナロ
グの記録再生兼用として用いる場合、下部コアが
トラツク間で連続していることからトラツク間の
クロストークが大きいこと、上部、下部コアの膜
端面が磁気ギヤツプ面と平行となつており端面が
擬似磁気ギヤツプとなつてｆ特のうねりを生ずる
いわゆるコンター効果が発生すること、および、
トラツク間隔が狭い場合に、コイル配設スペース
が狭くなりコイル幅が充分にとれないことにより
コイル抵抗が増大し、再生時のインピーダンスノ
イズが増大する等の問題点がある。 This head structure is used exclusively for digital magnetic recording, and when used for both analog recording and playback, such as in electronic still cameras, crosstalk between tracks is large because the lower core is continuous between tracks. , the film end faces of the upper and lower cores are parallel to the magnetic gap plane, and the end faces form a pseudo magnetic gap, causing a so-called contour effect that causes waviness of f characteristic;
When the track spacing is narrow, the space for installing the coil becomes narrow and the coil width cannot be secured sufficiently, causing problems such as an increase in coil resistance and an increase in impedance noise during reproduction.
本発明の目的は上記の問題点をなくし、クロス
トーク、コンター効果およびコイル抵抗を改善し
たアナログ記録再生に好適な多素子薄膜磁気ヘツ
ドを提供するにある。
SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned problems and provide a multi-element thin film magnetic head suitable for analog recording and reproducing which has improved crosstalk, contour effect and coil resistance.
本発明の特徴は、非磁性基板に下部コアを埋込
む溝を該溝の底面が基板表面と非平行となる様各
トラツク毎に設け、トラツク間で下部コアが連続
することをさけクロストークを改善するとともに
下部コア端面がギヤツプ面と非平行とすることに
よりコンター効果を改善すること、また、隣接ト
ラツクのギヤツズ間隔より上部、下部コアの後部
コア接続部のトラツク間隔を大きくすることによ
りコイル配設スペースを広げコイル抵抗を小さく
し併せコアの磁気抵抗を小さくし磁束の絞り効果
も生ずる様にしたことである。
A feature of the present invention is that a groove for embedding the lower core in the non-magnetic substrate is provided for each track so that the bottom surface of the groove is non-parallel to the surface of the substrate, thereby preventing the lower core from being continuous between tracks and reducing crosstalk. The contour effect is improved by making the end face of the lower core non-parallel to the gear plane, and the coil arrangement is improved by making the track spacing above the gear spacing of the adjacent track larger than that of the rear core connection part of the lower core. The installation space was expanded, the coil resistance was reduced, and the magnetic resistance of the core was also reduced to create a magnetic flux throttling effect.
以下、本発明の実施例を図面を用いて説明す
る。第１図は、本発明の実施例である多素子薄膜
磁気ヘツドの平面図、第２図は記録媒体摺動面、
第３図は第１図のＡ−A′断面図、第４図はヘツ
ド全体の斜視図を示したものである。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a multi-element thin film magnetic head which is an embodiment of the present invention, and FIG. 2 is a plan view of a recording medium sliding surface,
FIG. 3 is a sectional view taken along line A-A' in FIG. 1, and FIG. 4 is a perspective view of the entire head.
第１図、第２図および第３図において１は非磁
性基板、２ａ，２ｂは各隣接するトラツクの下部
コア、３は非磁性のギヤツプ材、６，６ａ，６
ｂ，６ｃは絶縁体、７ａ，７ｂは第１層目コイ
ル、８ａ，８ｂは第２層目コイル、４ａ，４ｂは
上部コア、５は保護膜、１０ａ，１０ｂは第１層
目コイルと第２層目コイルを接続するための接続
部、９ａ，９ｂは下部コアと上部コアを接続する
ための後部コア接続部である。また第４図は、前
記多素薄膜ヘツド素子１２を、ヘツドベース１１
上に、ステツプアツプトランス１３ａ，１３ｂと
ともに一体に組み込んだヘツド全体図で、７ａ，
８ａ，７ｂ，８ｂのコイルをステツプアツプトラ
ンス１３ａ，１３ｂの一次側コイルと接続し、該
トランスの２次側コイル１５ａ，１５ｂより信号
を取り出す構成となつている。 1, 2 and 3, 1 is a non-magnetic substrate, 2a and 2b are the lower cores of each adjacent track, 3 is a non-magnetic gap material, 6, 6a, 6
b, 6c are insulators, 7a, 7b are first layer coils, 8a, 8b are second layer coils, 4a, 4b are upper cores, 5 is a protective film, 10a, 10b are first layer coils and Connection parts 9a and 9b are used to connect the second layer coil, and rear core connection parts are used to connect the lower core and the upper core. Furthermore, FIG.
Above is an overall view of the head integrated with the step-up transformers 13a and 13b.
The coils 8a, 7b, 8b are connected to the primary coils of step-up transformers 13a, 13b, and signals are extracted from the secondary coils 15a, 15b of the transformers.
以下、本発明の実施例の製造法について具体的
に説明する。第５図における１は、ガラス、セラ
ミツク、フエライト等の非磁性基板で本実施例で
は、MnOとNiOの焼結基板を用いた。この基板
はMnOが50〜60％のモル％の含有率で熱膨張係
数が約140×10-7／℃となり、コア材として用い
るセンダストあるいはアモルフアス等の軟磁性膜
の熱膨張係数とほぼ同じ値となつている。また、
この基板は、特にメタル粉等を用いた記録媒体と
良好な当接をする。まず該非磁性基板に下部コア
埋込み用の溝を形成する。溝形状は、溝底面が基
板１の表面と非平行となる様、幅約200μm、深さ
20〜30μmで機械加工等により溝を形成する。次
に、下部コアとしてセンダストあるいはアモルフ
アス等の軟磁性膜を約30μmスパツタ等により形
成し、ラツピング等により平担化する。ここで、
下部コアを形成する前に、密着層としてCrある
いはZr等をスパツタ等により0.1μm〜1μm程度形
成すれば、更に基板１と下部コア２ａ，２ｂの付
着が向上する。得られた上記基板（第５図）のＢ
−B′断面が第６図である。 Hereinafter, a manufacturing method of an example of the present invention will be specifically explained. Reference numeral 1 in FIG. 5 denotes a non-magnetic substrate made of glass, ceramic, ferrite, etc. In this example, a sintered substrate of MnO and NiO was used. This substrate has a MnO content of 50 to 60% by mole and has a thermal expansion coefficient of approximately 140 × 10 -7 /℃, which is approximately the same as the thermal expansion coefficient of the soft magnetic film such as sendust or amorphous amorphous used as the core material. It is becoming. Also,
This substrate particularly makes good contact with a recording medium using metal powder or the like. First, a groove for embedding the lower core is formed in the nonmagnetic substrate. The groove shape is approximately 200 μm wide and deep so that the bottom surface of the groove is non-parallel to the surface of substrate 1.
A groove of 20 to 30 μm is formed by machining, etc. Next, a soft magnetic film such as sendust or amorphous is formed as a lower core by sputtering or the like to a thickness of about 30 μm, and is made flat by wrapping or the like. here,
Before forming the lower core, if Cr, Zr, or the like is formed as an adhesion layer by sputtering or the like to a thickness of about 0.1 μm to 1 μm, the adhesion between the substrate 1 and the lower cores 2a, 2b is further improved. B of the obtained above substrate (Fig. 5)
-B' cross section is shown in FIG.
次に、第７図、第７図のＣ−C′断面を示した第
８図に示す様に、ギヤツプ長を規制する為のギヤ
ツプ材３として0.2〜0.3μmの非磁性体をスパツタ
により形成する。ギヤツプ材３としては、アモル
フアス材（Co−Nb−Zr系）を用いる場合には、
CrあるいはZrの金属材料が、センダストを用い
る場合にはSiO2が付着力の点から適している。
更に、絶縁体６ａとしてSiO2を約1μmの膜厚で
スパツタリングにより形成し、第１層コイル７
ａ，７ｂとしてCrを約500Å、Cuを約4μm、更に
Crを約500Å順次積層し、所定の形状にエツチン
グ等の手法により形成する。この場合、第１層コ
イル７ａ，７ｂの各トラツクａ，ｂ間のコイル幅
は約100μmである。 Next, as shown in FIG. 7 and FIG. 8 which shows the C-C' cross section of FIG. do. When using an amorphous material (Co-Nb-Zr type) as the gap material 3,
When using sendust as a metal material such as Cr or Zr, SiO 2 is suitable from the viewpoint of adhesion.
Furthermore, SiO 2 is formed as an insulator 6a with a thickness of about 1 μm by sputtering, and the first layer coil 7 is
As a and 7b, Cr is about 500 Å, Cu is about 4 μm, and
Cr is sequentially laminated to a thickness of about 500 Å and formed into a predetermined shape by etching or other techniques. In this case, the coil width between each track a, b of the first layer coils 7a, 7b is approximately 100 μm.
次に、第９図、第９図のＤ−D′断面を示した
第１０図に示す様に、層間絶縁体６ｂとして
SiO2を約2μm形成し、第１層と第２層コイルの
接続の為に、接続部１０ａ，１０ｂの絶縁体６ｂ
をエツチングしスルーホールを形成する。更に第
１層コイルと同様にCr，Cu，Crを積層し、所定
の形状に形成する。ここで、第９図のコイル７
ａ，７ｂ，８ａ，８ｂの下側のパツド部におい
て、コイル抵抗低減のために第１層および第２層
コイルの多層として膜厚を厚くする構成とする。 Next, as shown in FIG. 9 and FIG. 10 showing the D-D′ cross section of FIG. 9, the interlayer insulator 6b is
SiO 2 is formed to a thickness of about 2 μm, and an insulator 6b of the connecting portions 10a and 10b is formed to connect the first layer and the second layer coil.
to form a through hole. Furthermore, similarly to the first layer coil, Cr, Cu, and Cr are laminated and formed into a predetermined shape. Here, coil 7 in FIG.
In the lower pad portions of a, 7b, 8a, and 8b, in order to reduce the coil resistance, the first layer and second layer coils are multilayered and the film thickness is increased.
更に、第１１図、第１１図のＥ−E′断面を示し
た第１２図に示す様に、層間絶縁体６ｃとして
SiO2を約3μm形成し、トラツク幅（50〜60μm）
を規制するギヤツプ部１６ａ，１６ｂおよび、後
部の上部、下部コア接続部９ａ，９ｂにスルーホ
ール形成のため絶縁体SiO2のエツチングを行う。
この様に、トラツク幅を規制するギヤツプ部１６
ａ，１６ｂを絶縁体６にスルーホールを設け、該
絶縁体の基板側スルーホール形状によりトラツク
幅を規制することにより、該絶縁体層の膜厚が
10μm程度と比較的薄いことから、上部コア（本
実施例では20μmと厚い）をパターニングしてト
ラツク幅規制をする場合に比較してトラツク幅精
度が向上する。更に、コア接続部９ｂにおける
Cr、あるいはZrのギヤツプ材をエツチングによ
り取り去る。また、ギヤツプ材３として層間材と
同じくSiO2を用いた場合には、製造法が異なり、
ギヤツプ材３は、ギヤツプ部１６ａ，１６ｂおよ
びコア接続部９ａ，９ｂのSiO2を取り除いた後
に、ギヤツプ長に見合う膜厚だけ形成し、その
後、コア接続部９ａ，９ｂについてギヤツプ材３
を取り除く。 Furthermore, as shown in FIG. 11 and FIG. 12 showing the E-E' cross section of FIG. 11, as an interlayer insulator 6c,
Form approximately 3 μm of SiO 2 and track width (50 to 60 μm)
The insulator SiO 2 is etched to form through holes in the gap portions 16a and 16b that regulate the heat and the rear upper and lower core connection portions 9a and 9b.
In this way, the gap portion 16 that regulates the track width
By providing through holes a and 16b in the insulator 6 and regulating the track width by the shape of the through holes on the substrate side of the insulator, the film thickness of the insulator layer can be reduced.
Since it is relatively thin at about 10 μm, the track width accuracy is improved compared to the case where the track width is regulated by patterning the upper core (thick at 20 μm in this embodiment). Furthermore, in the core connection part 9b
Remove the Cr or Zr gap material by etching. In addition, when SiO 2 is used as the gap material 3 like the interlayer material, the manufacturing method is different,
The gap material 3 is formed by removing SiO 2 from the gap portions 16a, 16b and the core connecting portions 9a, 9b, and then forming the gap material 3 to a thickness commensurate with the gap length.
remove.
次に、上部コアとしてアモルフアスあるいはセ
ンダスト磁性体を約20μmの膜厚だけスパツタリ
ングにより形成し、所定の形状にパターニング
し、更に保護膜として上部コアとしてセンダスト
を用いた場合にはSiO2を、またアモルフアスを
用いた場合にはMgOとSiO2の混合膜をスパツタ
リングあるいは蒸着により約10μm以上の膜厚だ
けマスクを用いることによりコイルパツド部を除
く部分に形成する。更に、第１１図のＦ−F′線に
沿う形状に機械加工等により整形することによ
り、第１図、第２図および第３図に示した本発明
の実施例である多素子薄膜磁気ヘツドが得られ
る。ここで、Ｆ−F′線に沿う形状としては、第２
図に示した様に、ヘツド摺動面のヘツド摺動幅
L4を、隣接するトラツクの上部磁性体のトラツ
ク幅方向における最外端面間距離L3より大きく、
かつ該最外端面間距離L3とトラツク幅Twの和
（L3＋Tw）より小さくする。L4がL3より小さい
場合には、整形のための機械加工の工程で保護膜
５にチツピング等の問題が生じ、かつ、L4が
（L3＋Tw）より大きい場合には、下部コア２ａ，
２ｂが両側に拡がり、記録媒体に記録された他の
隣接トラツクからの信号を再生しクロストークが
増大するという問題が生ずる。 Next, an amorphous amorphous or sendust magnetic material is formed as the upper core by sputtering to a thickness of about 20 μm, patterned into a predetermined shape, and a protective film is formed using SiO 2 or amorphous amorphous as a protective film. When a mixed film of MgO and SiO 2 is used, it is formed by sputtering or vapor deposition to a thickness of about 10 μm or more on the parts excluding the coil pad part using a mask. Furthermore, the multi-element thin film magnetic head according to the embodiment of the present invention shown in FIGS. 1, 2, and 3 is shaped by machining or the like into a shape along line F-F' in FIG. 11. is obtained. Here, the shape along the F-F' line is the second
As shown in the figure, the head sliding width of the head sliding surface
L 4 is larger than the distance L 3 between the outermost end surfaces of the upper magnetic bodies of adjacent tracks in the track width direction,
And it is made smaller than the sum (L 3 +Tw) of the distance L 3 between the outermost end surfaces and the track width Tw. If L 4 is smaller than L 3 , problems such as chipping will occur in the protective film 5 during the machining process for shaping, and if L 4 is larger than (L 3 +Tw), the lower core 2a ，
2b spreads to both sides, and a problem arises in that signals from other adjacent tracks recorded on the recording medium are reproduced, increasing crosstalk.
この様に構成した多素子薄膜磁気ヘツドでは、
隣接するトラツク間で下部コア２ａ，２ｂが離間
していることから、従来の連続した構成に比較し
てクロストークが改善する。また、第１図および
第１１図に示す様に、トラツク間隔L1に対して、
後部のコア接続部９ａ，９ｂ間の間隔L2を、L1
に対して充分大きくした事により、トラツク間隔
L1が小さい場合においても、コイルの配設スペ
ースが広くとれることから、コイル幅が大きくな
り、コイル抵抗を充分小さくすることが出来るこ
とからインピーダンスノイズが低減できる。更
に、第２図に見る様に、下部コア２ａ，２ｂの埋
込み溝を溝底面がギヤツプ材３の表面（基板表
面）に対して非平行に設けたことから、下部コア
下端面の擬似ギヤツプとギヤツプ３が位相干渉す
ることがなく、いわゆるコンター効果を防ぐこと
ができる。更に第４図に示す様に、ヘツドベース
１１に、上記薄膜ヘツド素子１２とステツプアツ
プトランス１３ａ，１３ｂを近接して一体化した
ことにより、該トランス１３ａ，１３ｂの一次側
コイル１４ａ，１４ｂの引き回し線が短くなるこ
とから無効インダクタンス（インピーダンスノイ
ズの原因）が低減でき、信号のステツプアツプが
有効に行うことができる。 In the multi-element thin film magnetic head configured in this way,
The spacing of lower cores 2a, 2b between adjacent tracks improves crosstalk compared to conventional continuous configurations. Furthermore, as shown in FIGS. 1 and 11, for track spacing L 1 ,
The distance L 2 between the rear core connection parts 9a and 9b is L 1
By making it sufficiently large for the track interval
Even when L 1 is small, the space for arranging the coil is large, so the coil width becomes large, and the coil resistance can be made sufficiently small, so impedance noise can be reduced. Furthermore, as shown in FIG. 2, since the groove bottoms of the embedded grooves of the lower cores 2a and 2b are provided non-parallel to the surface of the gap material 3 (substrate surface), it is possible to create a pseudo gap on the lower end surface of the lower cores. There is no phase interference between the gap 3 and the so-called contour effect can be prevented. Furthermore, as shown in FIG. 4, by integrating the thin film head element 12 and the step-up transformers 13a, 13b in close proximity to the head base 11, the routing lines of the primary coils 14a, 14b of the transformers 13a, 13b are Since the length becomes shorter, the ineffective inductance (a cause of impedance noise) can be reduced, and the signal can be stepped up more effectively.
本発明によれば、従来デイジタル記録にのみ使
用されていたものを、クロストーク、コンター効
果、コイル抵抗を改善したことにより、アナログ
記録再生に充分使用できる多素子薄膜磁気ヘツド
を提供することができる。
According to the present invention, it is possible to provide a multi-element thin film magnetic head that has been conventionally used only for digital recording, but can be sufficiently used for analog recording and reproduction by improving crosstalk, contour effect, and coil resistance. .
第１図は本発明の実施例で多素子薄膜磁気ヘツ
ドの平面図、第２図はその摺動面を示す図、第３
図は第１図のＡ−A′断面図、第４図は組立の斜
視図、第５図、第７図、第９図、第１１図は製造
法の説明図、第６図は第５図のＢ−B′断面図、
第８図は第７図のＣ−C′断面図、第１０図は第９
図のＤ−D′断面図、第１２図は第１１図のＥ−
E′断面図である。
１……非磁性基板、２ａ，２ｂ，４ｃ，４ｂ…
…コア、３……ギヤツプ材、６，６ａ，６ｂ，６
ｃ……絶縁体、７ａ，７ｂ，８ａ，８ｂ……コイ
ル、１１……ヘツドベース、１３ａ，１３ｂ……
ステツプアツプトランス。
FIG. 1 is a plan view of a multi-element thin film magnetic head according to an embodiment of the present invention, FIG. 2 is a diagram showing its sliding surface, and FIG.
The figure is a sectional view taken along the line A-A' in Figure 1, Figure 4 is a perspective view of assembly, Figures 5, 7, 9, and 11 are explanatory views of the manufacturing method, and Figure 6 is a sectional view of Figure 5. BB′ sectional view of the figure,
Figure 8 is a sectional view taken along line C-C' in Figure 7, and Figure 10 is a cross-sectional view of Figure 9.
12 is a sectional view taken along line D-D' in the figure.
It is an E′ cross-sectional view. 1...Nonmagnetic substrate, 2a, 2b, 4c, 4b...
...Core, 3...Gap material, 6, 6a, 6b, 6
c... Insulator, 7a, 7b, 8a, 8b... Coil, 11... Head base, 13a, 13b...
Step-up transformer.
Claims (1)
るコア２ａ，２ｂ，４ａ，４ｂと、導電材から成
るコイル７ａ，７ｂ，８ａ，８ｂと、絶縁体６，
６ａ，６ｂ，６ｃと、保護膜５の各薄膜が、所定
の形状に積層されて成り、 上記コア２ａ，２ｂ，４ａ，４ｂは、 ギヤツプ材３を介しその上下部に分離して配置
された上部コア４ａ，４ｂと下部コア２ａ，２ｂ
とから成り、うち下部に配された下部コア２ａ，
２ｂは、隣接する２つのトラツクに対応して２つ
に分割され、かつこれを非磁性基板１中へ埋込む
ための埋込み用溝１００ａ，１００ｂとしてその
底面が上記ギヤツプ材３の平面に対しトラツク方
向に非平行状である埋込み用溝１００ａ，１００
ｂを有し、かつ、上記上部コア４ａ，４ｂと上記
下部コア２ａ，２ｂの後部にあつて上記上部コア
４ａ，４ｂと上記下部コア２ａ，２ｂとを接続
し、その互の間隔L2が、上記上部コア４ａ，４
ｂまたは上記下部コア２ａ，２ｂで形成されたト
ラツク間隔L1よりも大きい構成のコア接続部９
ａ，９ｂを備えた構成であることを特徴とする多
素子薄膜磁気ヘツド。 ２ 上記コア２ａ，２ｂ，４ａ，４ｂは、 コア接続部９ａ，９ｂの間隔L2がヘツド摺動
面上のヘツド摺動幅L2に等しく、上部コア４ａ，
４ｂのトラツク方向における最外端面間距離L3
より大きく、かつ該最外端面間距離L3とトラツ
ク幅Twとの和よりも小さい構成である特許請求
の範囲第１項に記載の多素子薄膜磁気ヘツド。 ３ 上記非磁性基板１は、 少なくともMnOとNiOを含む焼結体である特
許請求の範囲第１または２項に記載の多素子薄膜
磁気ヘツド。 ４ 上記コア２ａ，２ｂ，４ａ，４ｂは、 上記非磁性基板１との間にCrまたはZrの密着
層を有し、かつ、Coをベースとし、NbまたはZr
を成分とするアモルフアス軟磁性体を積層して成
る構成である特許請求の範囲第１項に記載の多素
子薄膜磁気ヘツド。 ５ 上記コア２ａ，２ｂ，４ａ，４ｂは、 Coをベースとし、NbまたはZrを成分とするア
モルフアス軟磁性体で構成され、 かつ、 上記保護膜５は、 MgOとSiO2の混合体で構成されている特許請
求の範囲第１項に記載の多素子薄膜磁気ヘツド。 ６ 上記コア２ａ，２ｂ，４ａ，４ｂは、 ギヤツプ材３を介してその上下部に分離して配
置された上部コア４ａ，４ｂと下部コア２ａ，２
ｂとから成り、Coをベースとし、NbまたはZrを
成分とするアモルフアス軟磁性体で構成され、 かつ、 上記ギヤツプ材３は、CrまたはZrで構成され
ている特許請求の範囲第１項に記載の多素子薄膜
磁気ヘツド。 ７ 上記コイル７ａ，７ｂ，８ａ，８ｂは、 その端末部が、これに近接して設けられたステ
ツプアツプトランス１３ａ，１３ｂのコイル端末
に接続され、 上記非磁性基板１は、上記ステツプアツプトラ
ンス１３ａ，１３ｂと一体状に、ヘツドベース１
１の面上に固定された構成である特許請求の範囲
第１項に記載の多素子薄膜磁気ヘツド。 ８ 上記絶縁体６，６ａ，６ｂ，６ｃは、 その面内に、トラツク幅Twを規制するための
スルーホールを有する構成である特許請求の範囲
第１項に記載の多素子薄膜磁気ヘツド。[Claims] 1. On a non-magnetic substrate 1, at least cores 2a, 2b, 4a, 4b made of a magnetic material, coils 7a, 7b, 8a, 8b made of a conductive material, an insulator 6,
6a, 6b, 6c, and each thin film of the protective film 5 are laminated in a predetermined shape. Upper cores 4a, 4b and lower cores 2a, 2b
and a lower core 2a disposed at the bottom,
2b is divided into two parts corresponding to the two adjacent tracks, and is used as embedding grooves 100a and 100b for embedding it into the non-magnetic substrate 1, and its bottom surface is placed in a track with respect to the plane of the gap material 3. Embedded grooves 100a, 100 non-parallel to the direction
b, and connects the upper cores 4a, 4b and the lower cores 2a, 2b at the rear of the upper cores 4a, 4b and the lower cores 2a, 2b, and has a mutual spacing L2. , the upper cores 4a, 4
b or a core connection portion 9 having a configuration larger than the track spacing L 1 formed by the lower cores 2a and 2b.
A multi-element thin film magnetic head characterized in that it has a configuration comprising: a, 9b. 2 The cores 2a, 2b, 4a, 4b have the following characteristics: the distance L2 between the core connecting portions 9a, 9b is equal to the head sliding width L2 on the head sliding surface, and the upper core 4a,
Distance between the outermost end surfaces in the track direction of 4b L 3
The multi-element thin film magnetic head according to claim 1, which is larger than the sum of the distance L3 between the outermost end surfaces and the track width Tw. 3. The multi-element thin film magnetic head according to claim 1 or 2, wherein the nonmagnetic substrate 1 is a sintered body containing at least MnO and NiO. 4 The cores 2a, 2b, 4a, 4b have an adhesion layer of Cr or Zr between them and the non-magnetic substrate 1, and are based on Co and have a base layer of Nb or Zr.
2. A multi-element thin film magnetic head according to claim 1, which is constructed by laminating amorphous soft magnetic materials containing as a component. 5 The cores 2a, 2b, 4a, 4b are composed of an amorphous soft magnetic material based on Co and composed of Nb or Zr, and the protective film 5 is composed of a mixture of MgO and SiO2 . A multi-element thin film magnetic head according to claim 1. 6 The above cores 2a, 2b, 4a, 4b are divided into upper and lower cores 4a, 4b and lower cores 2a, 2, which are arranged separately in the upper and lower parts with the gap material 3 in between.
b, and is composed of an amorphous soft magnetic material having Co as a base and Nb or Zr as a component, and the gap material 3 is composed of Cr or Zr, as set forth in claim 1. multi-element thin film magnetic head. 7 The terminal portions of the coils 7a, 7b, 8a, 8b are connected to the coil terminals of the step-up transformers 13a, 13b provided close to the coils, and the non-magnetic substrate 1 is connected to the coil terminals of the step-up transformers 13a, 13b. , 13b integrally with the head base 1.
A multi-element thin film magnetic head according to claim 1, wherein the multi-element thin film magnetic head is configured to be fixed on one surface. 8. The multi-element thin film magnetic head according to claim 1, wherein the insulators 6, 6a, 6b, 6c have through holes in their planes for regulating the track width Tw.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11454184A JPS60258718A (en) | 1984-06-06 | 1984-06-06 | Multi-element thin film magnetic head |
| US06/719,057 US4752850A (en) | 1984-06-06 | 1985-04-02 | Multi-track magnetic thin film heads |
| DE8585105985T DE3579498D1 (en) | 1984-06-06 | 1985-05-15 | THICK LAYER MULTIPLE TRACK MAGNETIC HEADS AND METHOD FOR THE PRODUCTION THEREOF. |
| EP85105985A EP0163998B1 (en) | 1984-06-06 | 1985-05-15 | Multi-track magnetic thin film heads and a method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11454184A JPS60258718A (en) | 1984-06-06 | 1984-06-06 | Multi-element thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60258718A JPS60258718A (en) | 1985-12-20 |
| JPH0516081B2 true JPH0516081B2 (en) | 1993-03-03 |
Family
ID=14640346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11454184A Granted JPS60258718A (en) | 1984-06-06 | 1984-06-06 | Multi-element thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60258718A (en) |
-
1984
- 1984-06-06 JP JP11454184A patent/JPS60258718A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60258718A (en) | 1985-12-20 |
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