JPH05160587A - High frequency circuit device - Google Patents

Abstract

PURPOSE:To eliminate influence of heat generated in a device having a large quantity of generating heat to other devices by incorporating a semiconductor device having a large quantity of generating heat and a semiconductor device having a small quantity of generating heat in one housing. CONSTITUTION:The high frequency circuit device comprises a semiconductor device 26, a semiconductor device 24 having smaller quantity of generating heat than that of the device 26, and a strip line board 14 having a ground conductor 10 on a rear surface and a strip line conductor 12 on a front surface. The circuit device also comprises a conductor block 42 to be so fixed as to electrically connect from the side of the conductor 10 to a ground electrode of the device 26 and a ground conductor of the strip line board, a conductor block 50 so fixed as to electrically connect from the side of the conductor 10 to a ground electrode of the device 24 and the conductor 10, and a radiator 30 thermally insulated from the block 50 and having a heat radiating surface of a large surface area on the surface of the block 42 at opposite side of a thermally coupling surface.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency circuit device in which a semiconductor device such as a microwave high power amplifier which consumes a large amount of power and generates a large amount of heat and a semiconductor device which generates a relatively small amount of heat are housed in a single casing.

[0002]

2. Description of the Related Art FIG. 4 (a) is a plan view showing a typical microwave high power amplifier, and FIG. 4 (b) is a sectional view thereof. In the figure, a circuit for supplying a bias voltage to the FET and a stub for matching the input / output impedance are omitted for simplification.

A metal case 15 is a microstrip line substrate 14 having a ground conductor 10 on its back surface and a circuit pattern 12 formed of microstrip lines on its front surface.
It is screwed onto the microstrip line substrate 14 and the small power GaA is sequentially provided on the microstrip line substrate 14 from the input connector 16 side.
The sFETs 18 and 20, the MIC circulator 22, the medium power GaAsFET 24, and the high power GaAsFET 26 are mounted, and the output connector 28 is connected. Metal housing 15
A heat radiation fin 30 for heat radiation is attached to the back surface of the. In addition to holding the substrate 14 and each device, the metal housing 15 also plays a role of maintaining continuity of the ground surface of the microwave circuit.

[0004]

As described above, since the conventional microwave high-power amplifier has a structure in which all the devices mounted on the substrate 14 are thermally coupled by the metal casing 15, the structure shown in FIG. As shown in b), high power GaAsF
There is a problem that the heat generated in a device having a large amount of heat generation such as the ET26 is transferred to another device having a small amount of heat generation, which easily causes deterioration of characteristics. Further, since the shape of the metal casing 15 is complicated, the processing steps are complicated and the cost is high.

Therefore, a first object of the present invention is to provide a high frequency circuit device in which heat generated in a device having a large heat generation amount does not affect the characteristics of other devices. A second object of the present invention is to provide a high frequency circuit device in which each component can be easily processed and assembled.

[0006]

A high-frequency circuit device of the present invention that achieves the above-mentioned object is at least one first semiconductor device, and at least one of which generates a smaller amount of heat during operation than the first semiconductor device. A second high-frequency circuit device, and a strip-line substrate having a ground conductor on the back surface and a strip-line conductor on the front surface to form a high-frequency circuit with the first and second semiconductor devices A first conductor block fixed so as to be electrically connected to the ground electrode of the first semiconductor device and the ground conductor of the strip line substrate from the ground conductor side of the strip line substrate; The ground conductor of the strip line substrate is electrically connected to the ground electrode of the second semiconductor device and the ground conductor of the strip line substrate. A second conductor block fixed to, is thermally coupled between the first conductor block, thermally insulated in between the second conductor block, first
And a radiator having a large surface area radiating surface on the side opposite to the surface that is thermally coupled to the conductor block.

[0007]

The first conductor block and the second conductor block are provided to maintain the continuity of the ground plane with respect to the first semiconductor device and the second semiconductor device, respectively, but the radiator is the first conductor block. That the heat generated in the first semiconductor device affects the characteristics of the second semiconductor device, because it is thermally coupled only to the conductor block of the second semiconductor device and is thermally insulated from the second conductor block. There is no.

[0008]

FIG. 1 is a diagram showing a microwave high power amplifier according to a first embodiment of the present invention, column (a) is a plan view,
Section (b) is a sectional view thereof. The same components as those in FIG. 4 are designated by the same reference numerals and the description thereof will be omitted.
In FIG. 1, the dielectric substrate 14 is fixed to a metal frame 40 made by processing a metal plate. High power GaAsFE
At the mounting position of T26, the U-shaped metal block 42 is brought into contact with the ground conductor 10 from the back side of the substrate 14,
The high-power GaAs FET 26 is mounted so as to come into contact with it by being screwed with a screw 44 from the front side of 4. Therefore, the continuity of the ground plane of the high power GaAs FET 26 is maintained by the U-shaped metal block 42.

At the mounting positions of the medium power GaAs FET 24 and the MIC circulator 22, the U-shaped metal blocks 50 and 46 are brought into contact with the ground conductor 10 and screwed from the front side with screws 52 and 48, respectively. Medium power GaAs FET 24 and MIC to contact
The circulator 22 is mounted. Therefore, the continuity of the ground planes in the medium power GaAs FET 24 and the MIC circulator 22 is maintained by the U-shaped metal blocks 50 and 46, respectively.

The heat radiation fins 30 are screwed to the back side of the metal frame 40 for heat radiation. At this time, the U-shaped metal block 42 has a thickness capable of contacting the upper surfaces of the heat radiation fins 30. However, since the U-shaped metal blocks 46 and 50 are thinner than the U-shaped metal blocks 46 and 50, the U-shaped metal blocks 46 and 50 are separated from the upper surface of the heat radiation fin 30. Therefore, in operation, high power GaAsFE
Although the heat of T26 is dissipated from the heat dissipation fin 30, the U-shaped blocks 46 and 50 are not in contact with the heat dissipation fin 30, so that the heat from the high power GaAsFET 26 is transferred to the MIC circulator 22 and the medium power GaAsFET 24. There is no such thing. Low power GaAs FET 18, 20
Also, since it does not contact the heat radiation fin 30, heat from the high power GaAs FET 26 is not transferred similarly.

FIG. 2 is a diagram showing a second embodiment of the present invention. Only the vicinity of the high power GaAs FET 26 is shown in the figure. Other parts are the same as in FIG. In this embodiment, a radiation fin whose width is slightly larger than that of the U-shaped metal block 42 is attached to the back side of the metal block 42.
Only the high power GaAs FET 26 radiates heat. FIG. 3 is a diagram showing a third embodiment of the present invention, in which the U-shaped metal block 42 and the heat radiation fin 60 of FIG. 2 are integrated with a finned block 62.

[0012]

As described above, according to the present invention,
A high-frequency circuit device including a device having a large heat generation amount and a device having a small heat generation amount,
Provided is a high-frequency circuit device in which heat generated in a device having a large heat generation amount does not affect other devices and which can be easily processed / assembled.

[Brief description of drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention.

FIG. 2 is a diagram showing a second embodiment of the present invention.

FIG. 3 is a diagram showing a third exemplary embodiment of the present invention.

FIG. 4 is a diagram showing a conventional microwave high power amplifier.

[Explanation of symbols]

 10 ... Ground conductor 12 ... Circuit pattern 14 ... Microstrip line substrate 16 ... Input connector 18, 20 ... Low power GaAsFET 22 ... MIC circulator 24 ... Medium power GaAsFET 26 ... High power GaAsFET 28 ... Output connector 30 ... Radiating fin 40 ... Metal Frame 42, 46, 50 ... U-shaped metal block

Claims (3)

[Claims] 1. At least one first semiconductor device, at least one second semiconductor device that generates less heat during operation than the first semiconductor device, and a ground conductor on the back surface and a strip on the front surface. A high frequency circuit device comprising a strip line substrate having a line conductor and forming a high frequency circuit together with the first and second semiconductor devices, wherein the first semiconductor device is provided from the ground conductor side of the strip line substrate. A first conductor block fixed to be electrically connected to the ground electrode of the strip line substrate and the ground conductor of the strip line substrate, and the ground of the second semiconductor device from the ground conductor side of the strip line substrate. A second conductor block fixed so as to be electrically connected to the electrode and the ground conductor of the strip line substrate; and the first conductor block. Thermally coupled between the second
And a radiator having a large surface area heat radiating surface on the surface opposite to the heat coupling surface with the first conductor block. Circuit device. 2. The rear surface of the strip line substrate and the thermal coupling surface of the radiator are arranged substantially parallel to each other,
The second conductor block is thermally insulated from the thermal coupling surface when the first conductor block is placed in contact with the thermal coupling surface of the radiator. The high frequency circuit device according to claim 1, wherein the conductor block has a thickness smaller than that of the first conductor block. 3. The high frequency circuit device according to claim 1, wherein the thermal coupling surface of the radiator has a size that occupies the lower side of the first conductor block and does not occupy the lower side of the second conductor block.