JPH05158068A - Liquid crystal display device and its production - Google Patents

Liquid crystal display device and its production

Info

Publication number
JPH05158068A
JPH05158068A JP31911891A JP31911891A JPH05158068A JP H05158068 A JPH05158068 A JP H05158068A JP 31911891 A JP31911891 A JP 31911891A JP 31911891 A JP31911891 A JP 31911891A JP H05158068 A JPH05158068 A JP H05158068A
Authority
JP
Japan
Prior art keywords
substrate
liquid crystal
display device
crystal display
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP31911891A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hiramoto
廣幸 平本
Shinichi Imashiro
慎一 今城
Seiichiro Kobayashi
静一郎 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP31911891A priority Critical patent/JPH05158068A/en
Publication of JPH05158068A publication Critical patent/JPH05158068A/en
Withdrawn legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To provide a liquid crystal display device provided with a light shielding film which attains high numerical aperture and its production as for the liquid crystal display device provided with the light shielding film which attains the high numercial aperture of a picture element and its production. CONSTITUTION:This device is provided with a 1st substrate 10 having a picture element electrode 18, a 2nd substrate 22 having a common electrode 27 arranged to be opposed to the substrate 10 at specified space so as to interpose a liquid crystal layer 29, a thin film transistor element formed on the opposed surface of the substrate 10 to the substrate 22, and the light shielding film 23 formed to cover the thin film transistor element on the thin film transistor element on the substrate 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置とその製造
方法に係わり、特に高い画素の開口率を可能とする遮光
膜を有する液晶表示装置とその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method for manufacturing the same, and more particularly to a liquid crystal display device having a light-shielding film that enables a high pixel aperture ratio and a method for manufacturing the same.

【0002】[0002]

【従来の技術】図3に従来の技術による液晶表示装置の
画素部分における断面構造例を模式的に示して、それを
参照して従来の液晶表示装置を以下に説明する。
2. Description of the Related Art FIG. 3 schematically shows an example of a sectional structure of a pixel portion of a conventional liquid crystal display device, and a conventional liquid crystal display device will be described below with reference to it.

【0003】一方のガラス基板30の上に薄膜トランジ
スタ領域31と画素電極32が形成されている。他方の
ガラス基板33上には薄膜トランジスタ領域31と対向
してそれを覆うような遮光膜兼ブラックマトリックス3
4と、カラーフィルタ35が形成され、さらにその上に
共通電極層36が形成されている。
A thin film transistor region 31 and a pixel electrode 32 are formed on one glass substrate 30. On the other glass substrate 33, the black matrix 3 also serving as a light-shielding film facing the thin film transistor region 31 and covering it.
4 and a color filter 35, and a common electrode layer 36 is further formed thereon.

【0004】図示はしないが、さらに両基板に配向処理
を施し、両基板間に所定間隔を保って液晶セルを組み立
てる。さらに基板間に液晶層37が配置されて液晶表示
装置が形成されている。
Although not shown, both substrates are further subjected to an alignment treatment to assemble a liquid crystal cell with a predetermined space kept between the substrates. Further, a liquid crystal layer 37 is arranged between the substrates to form a liquid crystal display device.

【0005】[0005]

【発明が解決しようとする課題】基板33に形成する遮
光膜兼ブラックマトリックス34は隣接画素を分かつブ
ラックマトリックスとしての役目と薄膜トランジスタ3
1への光の入射を防止する遮光膜としての役目を果す
が、上下2枚の基板30、33の位置決め精度のばらつ
き(重合わせずれ)を考慮して薄膜トランジスタ領域3
1よりも少し大きめの面積を覆うようにパターニングさ
れる。
The light-shielding film / black matrix 34 formed on the substrate 33 serves as a black matrix for dividing adjacent pixels and the thin film transistor 3 is formed.
The thin film transistor region 3 serves as a light-shielding film that prevents light from entering the first thin film transistor 1. However, in consideration of variations in positioning accuracy of the upper and lower two substrates 30 and 33 (overlapping shift).
Patterning is performed so as to cover an area slightly larger than 1.

【0006】その為に、遮光面積が必要以上に大きくな
る傾向となり、画素の開口率は減少して画面の明るさを
制限する。本発明の目的は、高い開口率を可能とする遮
光膜を有する液晶表示装置とその製造方法を提供するこ
とにある。
Therefore, the light-shielding area tends to be larger than necessary, the aperture ratio of the pixel is reduced, and the brightness of the screen is limited. An object of the present invention is to provide a liquid crystal display device having a light-shielding film that enables a high aperture ratio and a manufacturing method thereof.

【0007】[0007]

【課題を解決するための手段】本発明による液晶表示装
置は、画素電極を有する第1の基板と、前記第1の基板
に対向して所定間隔をもって液晶層を挟持するように配
置された共通電極を有する第2の基板と、前記第1の基
板の前記第2の基板との対向面上に形成された薄膜トラ
ンジスタ素子と、前記第1の基板の前記薄膜トランジス
タ素子の上に前記薄膜トランジスタ素子を覆うように形
成した遮光膜とを有することを特徴とする。
A liquid crystal display device according to the present invention includes a first substrate having a pixel electrode and a common substrate arranged so as to face the first substrate and sandwich a liquid crystal layer at a predetermined interval. A second substrate having an electrode, a thin film transistor element formed on a surface of the first substrate facing the second substrate, and the thin film transistor element on the thin film transistor element of the first substrate. And a light-shielding film formed as described above.

【0008】本発明による液晶表示装置の製造方法は、
第1の基板に薄膜トランジスタと画素電極とを形成する
工程と、前記第1の基板の画素電極の領域以外の領域を
遮光膜で覆う工程と、第2の基板に前記遮光膜よりも幅
の狭いブラックマトリックスを形成する工程と、前記第
2の基板にカラーフィルタ層を形成する工程と、前記第
2の基板の前記ブラックマトリックスと前記カラーフィ
ルタ層との上に共通電極層を形成する工程と、前記第1
の基板と前記第2の基板とを重合わせて液晶をその間に
封入する工程とを含む。
A method of manufacturing a liquid crystal display device according to the present invention comprises:
Forming a thin film transistor and a pixel electrode on the first substrate; covering a region other than the region of the pixel electrode on the first substrate with a light shielding film; and forming a second substrate having a width narrower than the light shielding film. Forming a black matrix, forming a color filter layer on the second substrate, and forming a common electrode layer on the black matrix and the color filter layer of the second substrate, The first
And the second substrate and the liquid crystal is sealed between them.

【0009】[0009]

【作用】第1の基板の薄膜トランジスタ素子の上に遮光
領域を形成したことにより、遮光膜のパターニングにお
いて第1と第2の基板の位置合わせずれによるマージン
を見込む必要はなく、必要最小限の遮光面積ですむので
開口率が向上する。
By forming the light-shielding region on the thin film transistor element of the first substrate, it is not necessary to consider a margin due to misalignment of the first and second substrates when patterning the light-shielding film, and the minimum necessary light-shielding is performed. Since the area is large, the aperture ratio is improved.

【0010】[0010]

【実施例】以下、図1および図2を参照して、本発明の
実施例による液晶表示装置を説明する。なお、図1は、
本発明の実施例における液晶表示装置の断面構造を示
し、図2は図1に示す構造の平面図を示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A liquid crystal display device according to an embodiment of the present invention will be described below with reference to FIGS. In addition, in FIG.
FIG. 2 shows a sectional structure of a liquid crystal display device in an example of the present invention, and FIG. 2 is a plan view of the structure shown in FIG.

【0011】図1において、アルカリフリーガラス基板
10上にCr等のゲート電極11、SiO2 等のゲート
絶縁層12、チャンネルを形成するa−Si(アモルフ
ァスシリコン)半導体層13、SiNx (窒化シリコ
ン)によるエッチングストッパ層14、n型(より詳し
くはn+ 型)Siのコンタクト層15、ソース電極1
6、ドレイン電極17を順次形成して薄膜トランジスタ
(TFT)素子を形成する。
In FIG. 1, a gate electrode 11 made of Cr or the like, a gate insulating layer 12 made of SiO 2 or the like, an a-Si (amorphous silicon) semiconductor layer 13 forming a channel, and SiNx (silicon nitride) are formed on an alkali-free glass substrate 10. Etching stopper layer 14, n-type (more specifically, n + -type) Si contact layer 15, and source electrode 1
6, the drain electrode 17 is sequentially formed to form a thin film transistor (TFT) element.

【0012】これらの作成は従来技術同様であるが、た
とえば層の形成は蒸着、スパッタリングで、CVD等弐
よって行なえ、パターニングはホトレジストを用いたホ
トリソグラフィで行なえる。エッチングストッパ層14
は、ソース電極16、ドレイン電極17、コンタクト層
15のパターニングの際、a−Si層13がエッチされ
ないように保護する。
These are formed in the same manner as in the prior art, but for example, the layers can be formed by vapor deposition, sputtering, CVD, etc., and the patterning can be performed by photolithography using a photoresist. Etching stopper layer 14
Protects the a-Si layer 13 from being etched when the source electrode 16, the drain electrode 17, and the contact layer 15 are patterned.

【0013】さらにドレイン電極17に接続されるIT
O(インジウム錫酸化物)による画素電極18を形成
し、TFT上にパッシベーション層19を形成した後、
遮光層20を図2の平面図の斜線領域で示すように、T
FTを完全に覆い、さらに画素電極18の実質的な画素
領域以外の領域をすべて覆うように形成する。
Further, an IT connected to the drain electrode 17
After forming the pixel electrode 18 of O (indium tin oxide) and forming the passivation layer 19 on the TFT,
As shown by the shaded area in the plan view of FIG.
It is formed so as to completely cover the FT and further cover the entire area of the pixel electrode 18 other than the substantial pixel area.

【0014】もちろん、液晶セルの外周部の取り出し電
極(図示せず)部分は遮光層で覆わない。遮光層20の
材料は、染色ブラックあるいは顔料分散ブラックのよう
な黒色膜を用いるとよい。さらに、その上に配向層21
が設けられる。
Of course, the extraction electrode (not shown) on the outer periphery of the liquid crystal cell is not covered with the light shielding layer. As the material of the light shielding layer 20, a black film such as dyeing black or pigment dispersion black may be used. Furthermore, an alignment layer 21 is formed on the alignment layer 21.
Is provided.

【0015】次に、基板10に対向配置するためのもう
一つのアルカリフリーガラス基板22上に、隣接画素間
を分かつブラックマトリックス23をCr23 (酸化
クロム)或いはCrで形成する。このブラックマトリッ
クス23のパターン幅は、下の基板の遮光層20の幅よ
りも小さくして開口率を小さくしないようにする。
Next, a black matrix 23 is formed of Cr 2 O 3 (chromium oxide) or Cr for dividing the space between adjacent pixels on another alkali-free glass substrate 22 which is arranged to face the substrate 10. The pattern width of the black matrix 23 is made smaller than the width of the light shielding layer 20 of the lower substrate so that the aperture ratio is not reduced.

【0016】次に、カラーフィルタ24、25が染色法
あるいは顔料分散法にて形成され、その上にオーバコー
ト層26、ITOによる共通電極層27、配向層28が
順次積層して形成される。
Next, color filters 24 and 25 are formed by a dyeing method or a pigment dispersion method, and an overcoat layer 26, a common electrode layer 27 made of ITO, and an alignment layer 28 are sequentially laminated on the color filters 24 and 25.

【0017】以上の構造に形成した2枚の基板の間にギ
ャップ制御剤を散布して両基板を画素面とカラーフィル
タとが正確に対向一致するように重合わせ、密封シール
した後、液晶29が注入され、液晶注入口が封止されて
液晶表示装置が構成される。
A gap control agent is sprinkled between the two substrates formed as described above, the two substrates are overlapped so that the pixel surface and the color filter are exactly opposite to each other, and the liquid crystal 29 is sealed. Is injected and the liquid crystal injection port is sealed to form a liquid crystal display device.

【0018】なお、共通電極を有する基板側にもブラッ
クマトリックスを形成したがカラーフィルタの分離が行
なえればブラックマトリックスは省略してもよい。TF
T上に直接遮光膜を形成したため、TFTに対する遮光
効果は高い。2枚の基板の位置合わせによるマージンを
見込む必要はなくなる。
Although the black matrix is also formed on the side of the substrate having the common electrode, the black matrix may be omitted if the color filters can be separated. TF
Since the light shielding film is formed directly on T, the light shielding effect on the TFT is high. It is not necessary to allow for a margin due to the alignment of the two substrates.

【0019】以上実施例に沿って本発明を説明したが、
本発明はこれらに制限されるものではない。たとえば、
種々の変更、改良、組み合わせ等が可能なことは当業者
に自明であろう。
The present invention has been described above with reference to the embodiments.
The present invention is not limited to these. For example,
It will be apparent to those skilled in the art that various modifications, improvements, combinations and the like can be made.

【0020】[0020]

【発明の効果】薄膜トランジスタが形成される基板側に
薄膜トランジスタ領域を覆う遮光領域を形成したことに
より、遮光膜のパターニングにおいて上下二枚の基板の
位置合わせずれによるマージンを見込む必要はなく、必
要最小限の遮光面積ですむので開口率が向上する。
EFFECTS OF THE INVENTION By forming the light-shielding region covering the thin-film transistor region on the side of the substrate on which the thin-film transistor is formed, it is not necessary to allow a margin due to misalignment of the upper and lower substrates when patterning the light-shielding film, and the necessary minimum Since it requires only a light-shielding area, the aperture ratio is improved.

【0021】また、薄膜トランジスタの直上で遮光出来
るので、斜め横からの迷光による光劣化がほとんどな
い。
Further, since light can be shielded just above the thin film transistor, there is almost no photodegradation due to stray light from the diagonal side.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による液晶表示装置の実施例の断面図で
ある。
FIG. 1 is a cross-sectional view of an embodiment of a liquid crystal display device according to the present invention.

【図2】図1の液晶表示装置の平面図である。FIG. 2 is a plan view of the liquid crystal display device of FIG.

【図3】従来の技術による液晶セルの断面構造を説明す
る図である。
FIG. 3 is a diagram illustrating a cross-sectional structure of a conventional liquid crystal cell.

【符号の説明】[Explanation of symbols]

10・・・・・・アルカリフリーガラス基板 11・・・・・・ゲート電極 12・・・・・・ゲート絶縁層 13・・・・・・a−Si半導体層 14・・・・・・エッチングストッパ層 15・・・・・・n型(n+ 型)半導体層 16・・・・・・ソース電極 17・・・・・・ドレイン電極 18・・・・・・画素電極 19・・・・・・パッシベーション層 20・・・・・・遮光層 21・・・・・・配向層 22・・・・・・アルカリフリーガラス基板 23・・・・・・ブラックマトリックス23 24,25・・・カラーフィルタ 26・・・・・・オーバコート層 27・・・・・・共通電極層 28・・・・・・配向層 29・・・・・・液晶層10: Alkali-free glass substrate 11: Gate electrode 12: Gate insulating layer 13: a-Si semiconductor layer 14: Etching Stopper layer 15: n-type (n + type) semiconductor layer 16: source electrode 17: drain electrode 18: pixel electrode 19: ··· Passivation layer 20 ··· Light-shielding layer 21 ··· Alignment layer 22 ··· Alkali-free glass substrate 23 ··· Black matrix 23 24, 25 · · · Color Filter 26 ・ ・ ・ ・ Overcoat layer 27 ・ ・ ・ ・ ・ Common electrode layer 28 ・ ・ ・ ・ Alignment layer 29 ・ ・ ・ ・ Liquid crystal layer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 29/784 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 29/784

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】画素電極を有する第1の基板と、 前記第1の基板に対向して所定間隔をもって液晶層を挟
持するように配置された共通電極を有する第2の基板
と、 前記第1の基板の前記第2の基板との対向面上に形成さ
れた薄膜トランジスタ素子と、 前記第1の基板の前記薄膜トランジスタ素子の上に前記
薄膜トランジスタ素子を覆うように形成した遮光膜とを
有することを特徴とする液晶表示装置。
1. A first substrate having a pixel electrode; a second substrate having a common electrode facing the first substrate so as to sandwich a liquid crystal layer at a predetermined interval; A thin film transistor element formed on a surface of the substrate facing the second substrate, and a light shielding film formed on the thin film transistor element of the first substrate so as to cover the thin film transistor element. Liquid crystal display device.
【請求項2】 前記遮光膜は、前記第1の基板上の前記
第2の基板と対向する面の内、前記画素電極以外の部分
をすべて覆うように形成されていることを特徴とする請
求項1記載の液晶表示装置。
2. The light-shielding film is formed so as to cover all portions of the surface of the first substrate facing the second substrate other than the pixel electrodes. Item 3. A liquid crystal display device according to item 1.
【請求項3】 前記遮光膜に染色ブラックと顔料分散ブ
ラックのいずれかを含む絶縁性有機黒色層を含むことを
特徴とする請求項1ないし2記載の液晶表示装置。
3. The liquid crystal display device according to claim 1, wherein the light-shielding film includes an insulating organic black layer containing either dyed black or pigment-dispersed black.
【請求項4】第1の基板に薄膜トランジスタと画素電極
とを形成する工程と、 前記第1の基板の画素電極の領域以外の領域を遮光膜で
覆う工程と、 第2の基板に前記遮光膜よりも幅の狭いブラックマトリ
ックスを形成する工程と、 前記第2の基板にカラーフィルタ層を形成する工程と、 前記第2の基板の前記ブラックマトリックスと前記カラ
ーフィルタ層との上に共通電極層を形成する工程と、 前記第1の基板と前記第2の基板とを重合わせて液晶を
その間に封入する工程とを含む液晶表示装置の製造方
法。
4. A step of forming a thin film transistor and a pixel electrode on a first substrate, a step of covering a region other than a region of the pixel electrode of the first substrate with a light shielding film, and a light shielding film on a second substrate. A step of forming a black matrix having a width narrower than that of the second substrate, a step of forming a color filter layer on the second substrate, and a common electrode layer on the black matrix and the color filter layer of the second substrate. A method of manufacturing a liquid crystal display device, comprising: a forming step; and a step of superposing the first substrate and the second substrate and enclosing a liquid crystal therebetween.
JP31911891A 1991-12-03 1991-12-03 Liquid crystal display device and its production Withdrawn JPH05158068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31911891A JPH05158068A (en) 1991-12-03 1991-12-03 Liquid crystal display device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31911891A JPH05158068A (en) 1991-12-03 1991-12-03 Liquid crystal display device and its production

Publications (1)

Publication Number Publication Date
JPH05158068A true JPH05158068A (en) 1993-06-25

Family

ID=18106667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31911891A Withdrawn JPH05158068A (en) 1991-12-03 1991-12-03 Liquid crystal display device and its production

Country Status (1)

Country Link
JP (1) JPH05158068A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07218902A (en) * 1994-02-03 1995-08-18 Casio Comput Co Ltd Liquid crystal display device
DE19623069A1 (en) * 1995-08-29 1997-03-06 Lg Electronics Inc Liquid crystal display device and method of manufacturing the same
JP2006235057A (en) * 2005-02-23 2006-09-07 Kofu Casio Co Ltd Liquid crystal display element
US7439087B2 (en) 2002-12-27 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7692749B2 (en) 1995-12-20 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal electro-optic device
KR101430281B1 (en) * 2007-08-30 2014-08-14 재팬 디스프레이 웨스트 인코포레이트 Liquid crystal display device and method for manufacturing the same
CN104317111A (en) * 2014-10-14 2015-01-28 深圳市华星光电技术有限公司 Liquid crystal display panel
JP2018146921A (en) * 2017-03-09 2018-09-20 パナソニック液晶ディスプレイ株式会社 Liquid crystal display

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07218902A (en) * 1994-02-03 1995-08-18 Casio Comput Co Ltd Liquid crystal display device
DE19623069A1 (en) * 1995-08-29 1997-03-06 Lg Electronics Inc Liquid crystal display device and method of manufacturing the same
DE19623069B4 (en) * 1995-08-29 2004-04-08 Lg Philips Lcd Co., Ltd. Liquid crystal display device and method of manufacturing the same
DE19623069B9 (en) * 1995-08-29 2004-09-09 Lg. Philips Lcd Co., Ltd. Liquid crystal display device and method of manufacturing the same
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