JPH05144749A - Plasma treatment apparatus - Google Patents

Abstract

PURPOSE:To provide a new plasma treatment apparatus which realizes a stable plasma discharge in a plasma treatment apparatus wherein the area occupied by the apparatus is small and large quantities can be treated. CONSTITUTION:In a positive column-type plasma discharge, a discharge region 4 inside a reaction chamber is surrounded by a substrate 6, a susceptor 5 and a container 3. In the plasma discharge, an auxiliary susceptor 12 which constitutes nearly the same plane as the substrate susceptor 5 is installed on the side of at least one side of the substrate susceptor. Thereby, the part where the plasma discharge around the end part of the substrate is not uniform is eliminated, the plasma discharge which is uniform is realized and the substrate is utilized efficiently.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a positive column type plasma processing apparatus having a novel container or substrate support (susceptor) structure.

[0002]

2. Description of the Related Art A plasma treatment method is to add energy of an electromagnetic wave or the like to a specific substance to turn it into a plasma to form a radical having a strong activity, which is brought into contact with a substrate to form a film on the substrate, or a material for the surface of the substrate. The method of performing plasma processing such as etching and ashing is referred to as a plasma processing apparatus, and the plasma processing apparatus refers to all apparatuses that perform this processing. Such a plasma processing apparatus includes a plasma processing chamber, which is a vacuum container provided with a means for introducing a raw material gas for plasma generation and an exhaust means, an electromagnetic wave for converting the raw material gas introduced into the plasma processing chamber into a plasma, and the like. It is provided with an energy supplying means, a plasma-treated substrate and its supporting means, and a heating means for heating the substrate, if necessary.

[0003] By the way, such a plasma treatment largely depends on the activity of radicals, and the degree of plasma treatment on the substrate to be treated greatly changes depending on the state of plasma discharge that generates the radicals and the density distribution of the generated radicals. .. What is necessary for uniform plasma treatment over a large area is to select a state of plasma discharge that produces radicals uniformly and in large amounts over a large area. Electromagnetic wave energy of 13.56 MHz of high frequency, microwave, direct current or low frequency is used as electromagnetic wave energy for converting the raw material gas into plasma, and usually plasma discharge by high frequency is often used.

In such a plasma discharge, there are an inductive coupling type and a capacitive coupling type as the types thereof. The inductive coupling type is so-called non-polar discharge, and the capacitive coupling type is well known as the parallel plate electrode type. .. FIG. 2 shows a schematic view of a plasma CVD apparatus as an example of the parallel plate electrode type plasma processing apparatus. Thus, a pair of parallel plate electrodes (100) and (101) are provided in the reaction chamber (106), and each is connected to the high frequency power supply (102). The substrate to be treated (103) is usually placed on one of the electrodes, and this substrate is heated by heating means (104) such as a heater.

The reaction gas is introduced into the reaction chamber through the gas introduction port (105) and then decomposed and activated by the high frequency power supplied to the electrode to form a film on the substrate (103). In order to perform uniform plasma treatment (coating formation) on this substrate, it is necessary to realize uniform plasma discharge. Figure 2
As described above, there are cases in which the electrode on which the substrate is placed is rotated in order to compensate for this uniformity, but there are drawbacks in that the device becomes complicated and the size becomes large. In general, during plasma treatment, the substrate to be treated is usually arranged on the cathode (cathode) or the anode (anode) of the parallel plate electrode or on the cathode dark part or the anode dark part generated in the vicinity thereof. .. Therefore, the surface to be processed cannot be made larger than the size of the electrode.

By the way, technologies such as plasma CVD and plasma etching have been widely put to practical use in the manufacturing technology of semiconductor elements, electronic equipment parts and the like, and many devices for mass production have been proposed. 2. Description of the Related Art In recent years, an increase in the diameter of a substrate wafer for semiconductor devices and an increase in the size of the substrate have become remarkable. In particular, in the case of an active matrix type liquid crystal electro-optical device in which a thin film transistor is formed as a switching element of the liquid crystal electro-optical device, its size is remarkably increased, and a semiconductor film for a thin film transistor is provided on a substrate having a diagonal size of 15 to 20 inches. It has become necessary to form and etch. At the same time, it is desired to shorten the processing time for the purpose of reducing the manufacturing cost, and there has been a demand for an apparatus capable of improving the throughput of the processing apparatus and processing a large amount of substrates.

[0007]

In order to meet such a demand, the size of the plasma processing apparatus is being increased. For example, as shown in FIG. 2, the size of the electrode of the apparatus is enlarged. Is done. That is, in the case of the apparatus as shown in FIG. 2, since the substrate is placed directly on the electrode, increasing the area of the electrode is the simplest method for improving the processing capacity. In the case of such a parallel plate type plasma processing apparatus,
Increasing the electrode size directly leads to the expansion of the device size, which has been a problem for users who want to process a large substrate with a device having a small floor area.

In addition, since the electrode area increases, the density of the plasma in contact with the surface of the substrate to be processed becomes nonuniform (the discharge state is nonuniform), which causes a problem that uniform plasma processing cannot be performed. Was there. As one means for solving such a problem, a method has been proposed in which a plurality of parallel plate electrode pairs are provided in a reaction chamber and a substrate to be treated is provided on the electrodes, but a problem of complicating the device structure occurs. .. Furthermore, even with this method, there is still a non-uniformity of plasma discharge due to the increase in area, and there is a situation in which uniform plasma treatment cannot be performed.

As another method, there has been proposed a method in which a plurality of substrates are placed at a constant interval between a pair of substrates and plasma processing is performed. That is, the basic idea of this method is to utilize the positive column region of the plasma glow discharge and arrange a plurality of substrates to be treated in the positive column region for plasma treatment. As a plasma CVD method using this positive column, Japanese Patent Laid-Open No. 59-
59834, 59-59835. This method is shown in FIG. As shown in the figure, a pair of electrodes (10
A plurality of substrates (103) are mounted between the substrates (0) and (101) by the substrate susceptor (110). Further, this susceptor is provided as an integral body or an integral body with the container (113), and the substrate is handled by taking this container in and out of the reaction chamber. For simplification, only the vicinity of the plasma discharge region is shown in this figure. In this method, in order to effectively use the positive column of plasma, electrode shields (111) (112) are provided around the electrodes, and the reaction region is limited by the electrode shield and the outer peripheral wall of the container (113). The plasma is confined so that no discharge occurs outside.

In the case of such a system, in order to improve the plasma processing capacity and reduce the volume occupied by the apparatus, it is conceivable to reduce the space between the substrates and the space between the substrate susceptor and the electrode as much as possible. .. However, in the case of the conventional method, there is a problem in that the plasma discharge becomes unstable and the discharge is extinguished or becomes nonuniform by narrowing these intervals, and uniform plasma treatment cannot be performed.

That is, in the case of the conventional positive column type plasma processing apparatus as shown in FIG. 3, when the substrate holding space and the electrode-susceptor space become narrow, a current flows between the electrode (100) and the electrode (101). The flow passages are the susceptor and the substrate surface. This state is shown by the wavy line (11
5). For this reason, when the plasma discharge is observed at the start of the discharge and there is no reflection with respect to the incident power, even if the plasma discharge is stopped, the reflected power is not observed. Further, plasma discharge exists only in the immediate vicinity of the upper and lower electrodes, during which a current flows on the surface of the substrate susceptor, and plasma discharge does not exist near the substrate. Therefore, the supplied electric power is hardly supplied to the gas, and the plasma processing cannot be performed or the processing is non-uniform.

In addition, in the case of the above-mentioned apparatus, since there is a difference in the degree of plasma processing on the non-processed substrate, it is usually impossible to use the periphery of the substrate of 5 to 10% of the substrate size. there were. That is, for example, in the case of a plasma CVD apparatus, a film is formed on a substrate larger than the originally required substrate size, and then the periphery of the substrate is cut off. Therefore, the substrate area for further plasma treatment is increased. Increase in size, the size of the substrate is increased, and the size of the substrate is increased, causing an increase in the material cost of the substrate and other material costs.

[0013]

SUMMARY OF THE INVENTION The present invention solves the problems as described above, and is a novel plasma processing apparatus capable of processing a large substrate to be processed in a short processing time and performing uniform plasma processing. It proposes a simple structure.
Further, instead of performing the plasma treatment area on the surface of the limited electrode dark part, the plasma treatment is performed in the space of the positive column area, and a plurality of substrates to be treated are arranged in this space.
By dividing this plasma space into a plurality of individual plasma processing spaces, making the plasma state uniform in each individual processing space, and preventing the difference in plasma state in each individual space, It enables treatment and treatment of large area substrates.

The structure of the present invention is a positive column type plasma processing apparatus in which a plasma discharge region is surrounded by an electrode hood and an outer wall of a container, and a substrate susceptor for arranging a plurality of substrates in this discharge region. And the auxiliary susceptors that make up almost the same plane as this board susceptor are arranged at intervals.

FIG. 1 will be described below as an example of the present invention.
A description will be given according to this figure. FIG. 1 is a schematic view, and only the peripheral portion of the plasma discharge region in the reaction chamber is shown.
The discharge region of the plasma processing apparatus of the present invention is limited to the space (4) surrounded by the electrode shields (1) and (2) and the outer peripheral wall of the container (3). In order to prevent a discharge (parasitic discharge) from the part (1), it is installed in the immediate vicinity of the electrode and its potential is grounded.

Such plasma discharge region (4) is apparently divided into a plurality of regions (11) by the susceptor (5) of the container and the substrate (6). Further, an auxiliary susceptor (12) is provided at a position forming a plane similar to this substrate susceptor and at a position apart from the substrate susceptor, between the electrodes (7) and (8) and the substrate susceptor (5). Due to the presence of this auxiliary susceptor, the non-uniform portion of the plasma discharge moves from the peripheral portion of the substrate to be processed to this auxiliary susceptor portion. Therefore, the non-uniform portion of the plasma processing in the peripheral portion of the substrate is eliminated, and the effective area of the plasma processing in the substrate area can be increased.

In addition, in order to further stabilize the plasma discharge, by providing a protrusion for generating electric field concentration in the electrode portion at a position corresponding to each discharge region,
The discharge is stabilized, there is no difference in plasma state between the individual reaction regions, and more uniform plasma discharge can be realized.

Further, the plasma discharge can be stabilized by floating the potentials on the surfaces of the container and the susceptor, and the difference in the plasma state between the individual reaction regions is eliminated, and a more uniform plasma discharge can be realized. You can In either case, as shown in FIG. 3, the discharge power is prevented from leaking and flowing, and the discharge is stabilized. Further, the shape of the electrode itself does not have to be a flat plate, and can be a corrugated plate in that case,
If it can cause electric field concentration, there is no way to create a new protrusion. Furthermore, instead of a flat plate, it may be a mesh or punched through one.

As the installation position of this auxiliary susceptor,
As shown in FIG. 1, on the extension plane of the substrate susceptor,
Similar to the case of installing in the direction of a pair of electrodes, there are considered a mode of installing in a direction where the electrodes are not provided on the extension plane of the substrate susceptor and a mode of installing in any direction. It may be provided on the side of the required substrate susceptor according to the distribution of the above process. this house,
An example in which auxiliary susceptors are provided on all the sides of the substrate on the extension plane of the substrate susceptor is shown as a schematic view in FIG. In this figure, an auxiliary susceptor (12) is provided inside the electrode hoods (1) and (2), and an auxiliary hood (17) and an auxiliary susceptor (15) are provided inside both of the surfaces connecting the electrode hoods. ing.

In such a case, the outer peripheral wall of the container is not provided on the upper and lower electrode surfaces and the side surface of the auxiliary hood side, and when the container is placed at a predetermined position in the reaction chamber, The substrate susceptor of the container and the auxiliary susceptor (15) around it are arranged so as to move in the direction in which the auxiliary susceptor is not provided so that they form substantially the same plane.

In order to explain this situation in more detail, FIG.
5A shows the positional relationship of the container, the substrate susceptor, the electrode hood, the electrode and the auxiliary susceptor in the section AA ′ of FIG.
5B is a schematic cross-sectional view showing the positional relationship between the substrate susceptor, the electrode hood, the auxiliary hood, and the auxiliary susceptor as seen from the direction of arrow B in FIG. Figure 5
As is clear from (A), the auxiliary susceptor (12) is between the electrodes (7) and (8) and the substrate susceptor (5),
It forms substantially the same plane as the substrate susceptor (5). Further, as can be seen from FIG. 5B, the side surfaces other than the electrodes (7) and (8) are also placed inside the auxiliary hood (17) in the auxiliary susceptor (1).
5) is provided. Thereby, in this case all sides of the substrate susceptor (5) are surrounded by the auxiliary susceptor. The end of the auxiliary hood and the end of the electrode hood are close to each other and extended as shown in (18). Therefore, in this portion, leakage of plasma discharge from the vicinity of the joint between the electrode hoods (1) (2) and the auxiliary hood (17) is prevented and the plasma discharge is limited to within the discharge region, so that the inside of other reaction chambers can be prevented. It is designed not to touch the wall.

The material used for the auxiliary susceptor is not particularly limited as long as it is electrically insulated from the electrodes. In addition, the potential of the auxiliary susceptor is preferably substantially the same as that of the substrate susceptor. That is, when the potential of the substrate susceptor is held in a floating state, it is preferable to set the auxiliary susceptor in a floating state as well in order to realize stable discharge and uniform discharge in a large area. .. Hereinafter, the present invention will be described with reference to examples.

[0023]

[Embodiment 1] This embodiment shows an example in which the structure of the discharge region as shown in FIG. 1 is applied to a positive column type plasma CVD apparatus. FIG. 7 shows a schematic diagram thereof. As shown in the figure, the substrate loading chamber (21), the first reaction chamber (22), the second reaction chamber (23) and the substrate unloading chamber (24) respectively have gate valves (26) (27) (28). It is connected in series with it sandwiched. Further, the substrate loading chamber (21) and the substrate unloading chamber (24) are provided with gate valves (25) and (29), respectively, which are shielded from the outside. Also individual rooms (22)
(23), (24) and (25) are independent vacuum exhaust systems (3
0), (31), (32) and (33) are connected, and each chamber can be evacuated to maintain a predetermined pressure and atmosphere. This exhaust system has, as a basic configuration, a conductance valve (34) for adjusting an exhaust flow rate, a stop valve (35) (36), an oil-free turbo molecular pump (37) capable of vacuum exhaust, and water for low vacuum exhaust. It includes a sealing pump (38). If necessary, an exhaust bypass system or multiple exhaust systems can be installed.

Further, each chamber is provided with an independent gas supply system (40) (41) (42) (43),
Plural supply systems are provided to the reaction chambers (22) and (23) so as to supply the reaction atmosphere gas and other gases. These gas supply systems include a flow rate controller (44) and a stop valve (45) as basic components. In addition, since the plasma CVD apparatus is used in this embodiment, a halogen lamp heating means is provided in the substrate loading chamber (21) and the reaction chambers (22) and (23) for heating the substrate. This substrate heating means is installed at a position that cannot be described in the cross section of FIG. 6, that is, at the front and back surfaces of the plane of FIG. 5, and light is emitted from this surface in a direction parallel to the substrate surface to heat the substrate. It is like this. In addition to this position, the heating means can be installed on the surface on which the upper and lower electrodes are provided and can be changed as necessary. Further, the heating means can be changed to various modes such as a resistance heating system and an induction heating system other than the halogen lamp system.

The electrode structure in the vicinity of the discharge region shown in FIG. 1 was applied to the plasma CVD apparatus having such an apparatus structure. In this embodiment, 10 glass substrates having a surface of 600 mm × 800 mm × 1.1 mm whose surface has been polished are susceptors (5).
It was installed across. As described above, in this embodiment, the substrate (6) installed on the susceptor has a structure in which all the other surfaces are surrounded by the outer peripheral wall of the container except the pair of outer peripheral surfaces of the container. An electrode and an auxiliary susceptor are installed on the side of the surface on which it is located.

In this embodiment, as the electrode material, a flat plate electrode made of nickel having a thickness of 2 mm and a hole having a diameter of 3 mm punched through was used. Further, as the auxiliary susceptor, the same material as the container and the substrate susceptor, that is, the one in which an insulating film is formed on the surface of aluminum metal is used, and the auxiliary susceptor is installed in the eastern part of the substrate susceptor so as to have a floating potential.

The minimum distance between the auxiliary susceptor (12) and the substrate susceptor (5) is 3 to 10 mm, and in this embodiment, the distance is 6 mm. If this distance is 10 mm or more, the volume of the apparatus will increase, so the intervals were made as narrow as possible. If it is too narrow, the substrate is heated for the plasma CVD apparatus, and there is a problem that the container, the susceptor, the electrode, etc. are thermally expanded and come into contact with each other.
A distance of about mm was necessary.

The substrate (6) installed by the container (3) in the substrate loading chamber (21) is placed in the processing chamber (21).
The vacuum is evacuated to an ultimate vacuum of 2 × 10 ⁻⁷ Toor, and then heated by the heating means to 300 ° C. and maintained. After that, under substantially the same pressure conditions as in the first reaction chamber (22),
Open the sluice valve (26) and place the container in the first reaction chamber (2
After moving to 2), the sluice valve (26) is closed. In this reaction chamber, after forming the first thin film under predetermined conditions, evacuation is performed again and the gate valve (27) is opened under the same pressure condition as the second reaction chamber to open the container for the second reaction. Moving to the chamber, a second thin film is formed. After that, the vacuum exhaust is performed again, the partition valve (28) is opened under the same pressure condition as the substrate take-out chamber (24), and the container is moved. After that, the substrate is left in this chamber until the substrate temperature is lowered, or a refrigerant, a cooling gas, or the like is introduced into the take-out chamber (24) to lower the substrate temperature, and then the take-out chamber (24) is returned to the atmospheric pressure, and the partitioning is performed. Open the valve (29) and remove. By such a flow,
Thin films are formed on a large number of substrates. In the case of such a device configuration, it can be applied to the formation of a gate insulating film and a semiconductor layer of a thin film transistor, and the production of electronic elements such as solar cells and diodes.

With such a structure, the plasma discharge confined in the plasma reaction region is caused by the pair of electrodes (7) and (8), and the discharge power inputted on the surface of the substrate and the surface of the susceptor. Will not pass through, and almost all the input power will be supplied to the gas in the space to realize stable discharge and uniform plasma discharge. Furthermore, since the non-uniform portion of the plasma discharge moves to the vicinity of the auxiliary susceptor, uniform plasma discharge can be realized around the edge of the substrate. Therefore, in the apparatus of this embodiment, the film thickness of the coating film formed on the substrate is good on the substrate surface, and the film thickness uniformity of ± 4% can be achieved within the substrate size of 600 × 800 mm. The film thickness uniformity within a lot (10 sheets in this embodiment) could be achieved at ± 8%. Furthermore, when a metal material is used for the container or the container and the susceptor as in the present embodiment, the soaking property is very good especially when the substrate is heated by plasma CVD or the like, and the substrate on the substrate and in the container are The characteristic is that the distribution of the substrate temperature due to the difference in position is hardly seen. Therefore, as a means for heating the substrate, even if the entire substrate is not heated after the temperature distribution of the heating means is made uniform as in the conventional resistance heating or the like, as in the present embodiment, one or both end directions of the substrate can be applied. Even if heating was performed, uniform heating could be realized over the entire substrate, and in addition, the heating rate was fast and the time for plasma treatment could be shortened.

[Embodiment 2] In this embodiment, the structure of the discharge region is almost the same as that of the first embodiment, but the discharge region as shown in FIGS. 4 and 5 in which the auxiliary susceptor is installed on all of the substrate susceptors is used. The structure was applied. Furthermore, the structure shown in FIG. 6 having a protrusion for locally generating electric field concentration is adopted for the discharge electrode. That is, the auxiliary susceptors (12) and (1
5) is provided, and the plasma discharge region is an electrode hood (1)
It has a structure surrounded by (2), the container (6) and the auxiliary hood (17). Further, this discharge region is apparently divided into individual discharge regions by the substrate susceptor, and electric field concentration is generated in the protrusions in these divided individual discharge regions to realize a uniform plasma discharge. ,
Even if electric power leaks at the portion in contact with the plasma on the wall surface, the passage can be eliminated by supplementing it or concentrating the electric field, and a more uniform discharge can be realized in individual discharge regions, and the device It was possible to make the whole uniform.

For comparison, the film thickness uniformity when the silicon film was formed under the film forming conditions shown in Table 1 was measured between the device structure of this embodiment and the conventional device structure (FIG. 3). The results are shown in Table 2. Here, in the case of the conventional apparatus configuration, the susceptor is made of a metal material and is connected to the ground as a potential, and the stability of the discharge cannot be ensured. Therefore, the number of substrates processed at one time is six. A metal susceptor which is in the state of 60% of the example was used.

[0032]

[Table 1]

[0033]

[Table 2]

As described above, in the case of the present embodiment, the number of substrates processed at one time can be increased as compared with the conventional case.
In addition, since it is possible to realize stable and uniform plasma discharge, it is possible to reduce variations in the degree of processing between substrates.

In the above embodiments, the potentials of the container and the susceptor around the discharge region were not particularly limited, but if more stable discharge and uniformity of discharge are required, an insulating film is formed on at least the surface of the container or the susceptor. Is more preferably formed so that the potential on the surface of the susceptor is in a floating state. In addition, the outside of the container has a double structure, a part of which supports the container, and the inside susceptor is insulated from the outside reaction container,
It is also possible to make the potential of the susceptor surface floating.

[0036]

According to the configuration of the present invention, it is possible to realize a plasma processing apparatus capable of processing a large amount of a large area substrate with a very compact apparatus area and apparatus volume. Further, the degree of plasma treatment in a large-area substrate can be made uniform, and when applied to the production of thin film transistors for switching elements of liquid crystal displays, the production yield of products can be made extremely high. In addition, by changing the shape, position, size, etc. of the portion that causes the electric field concentration, it is possible to control the stability of the discharge due to the difference in the substrate installation intervals. Further, the degree of electric field concentration can be changed only by changing the distribution density of the projections on the electrodes, and thereby more stable plasma discharge can be realized.

[Brief description of drawings]

FIG. 1 is a schematic view of the vicinity of a discharge region of a plasma processing apparatus of the present invention.

FIG. 2 is a schematic diagram of a conventional plasma processing apparatus.

FIG. 3 is a schematic view of a discharge region of a conventional positive column type plasma processing apparatus.

FIG. 4 is a schematic view showing the relationship between the electrode hood and the auxiliary hood of the present invention.

FIG. 5 is a schematic view showing the relationship between the electrode, the electrode hood, the substrate susceptor and the auxiliary susceptor of the present invention.

FIG. 6 is a schematic diagram of the vicinity of another discharge region of the plasma processing apparatus of the present invention.

FIG. 7 is a schematic diagram when the configuration of the present invention is applied to a multi-chamber plasma CVD apparatus.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Hisashi Abe, 398 Hase, Atsugi, Kanagawa Prefecture, Semi Conductor Energy Laboratory Co., Ltd.

Claims (5)

[Claims] 1. At least one reaction chamber provided with means capable of evacuating to a reduced pressure state, gas supply means capable of supplying gas to the reaction chamber, and a pair of electrodes installed in the reaction chamber for generating plasma discharge. A plasma processing apparatus comprising: an electrode shield in proximity to at least a part of the pair of electrodes; and a container for installing a plurality of substrates to be processed supported by a susceptor between the pair of electrodes, A plurality of substrates in the container are arranged so that the plasma discharge region is apparently divided, and an auxiliary susceptor independent of the substrate susceptor constitutes a plane substantially the same as the substrate susceptor in the plasma region and is spaced from each other. The plasma processing apparatus is characterized in that the plasma processing apparatus is arranged. 2. The plasma processing apparatus according to claim 1, wherein the electrode is provided with a portion that causes electric field concentration. 3. The plasma processing apparatus according to claim 1, wherein the susceptor or the container is provided on a metal or alloy material in order to hold the surface of the container or the susceptor in a floating state with a potential. A plasma processing apparatus, which is manufactured using a material coated with an insulator. 4. The plasma processing apparatus according to claim 1, wherein the container is configured as a double structure in order to hold the surface of the container or the susceptor in a floating state in terms of electric potential, and supports the substrate. The plasma processing apparatus, wherein the susceptor and the outer frame having the double structure are electrically insulated. 5. At least one reaction chamber provided with means capable of evacuating to a reduced pressure state, gas supply means capable of supplying a gas to the reaction chamber, and a pair of electrodes installed in the reaction chamber for generating plasma discharge. A plasma processing apparatus comprising: an electrode shield in proximity to at least a part of the pair of electrodes; and a container for installing a plurality of substrates to be processed supported by a susceptor between the pair of electrodes, A plasma discharge region is surrounded by a pair of electrode hoods having an auxiliary susceptor, an outer wall of the container, and an auxiliary hood having an auxiliary susceptor installed on a surface other than the surface on which the pair of electrode hoods are provided. And a plasma processing apparatus.