JPH0514454Y2 - - Google Patents
Info
- Publication number
- JPH0514454Y2 JPH0514454Y2 JP1986108597U JP10859786U JPH0514454Y2 JP H0514454 Y2 JPH0514454 Y2 JP H0514454Y2 JP 1986108597 U JP1986108597 U JP 1986108597U JP 10859786 U JP10859786 U JP 10859786U JP H0514454 Y2 JPH0514454 Y2 JP H0514454Y2
- Authority
- JP
- Japan
- Prior art keywords
- cathode electrode
- discharge
- tube body
- discharge lamp
- lead wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 229910002367 SrTiO Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Description
［考案の目的］
（産業上の利用分野）
本考案は半導体磁器を用いた放電灯用電極に関
する。
（従来の技術）
ナトリウム灯等の冷陰極を用いた放電灯を例に
とると、その陰極を構成する放電電極は被加熱物
であるコイル状のタングステンフイラメント表面
に電子放射物質（バリウム、ストロンチウム、カ
ルシウムを主体とする酸化物）を塗布して形成さ
れる。
しかしながら、上記従来の電極は電子放射物質
の蒸発や放電灯内部に封入した水銀蒸気との反応
が避けられず、このため放電灯に要求される諸特
性を十分に満足させるものではなく、また、タン
グステンは戦略物質でコスト高であるという問題
がある。
ところで、結晶性酸化チタニウムを主成分とす
る半導体磁器を電極とした放電灯が知られている
（特公昭26−3596）が、この様な材料を用いたも
のは放電特性が悪く実用化困難であるという問題
点を有しているので好ましくない。
（考案が解決しようとする問題点）
そこで本考案の主たる目的は、安価でしかも放
電特性等の点で優れた特性を有し、冷陰極として
好適でしかも熱陰極にも使用可能な放電灯用電極
を提供することにある。
［考案の構成］
（問題点を解決するための手段）
本考案の放電灯用電極は、放電灯用管体と、
BaTiO3，SrTiO3，BaZrO3，SrZrO3のいずれか
を主成分とする半導体磁器により形成した略円柱
状で中央部が最も突出する頂部を有する放電面を
具備した陰極電極部と、この陰極電極部を中間部
で前記管体内に封着支持する封着支持部とを有す
ることを特徴とするものである。
（作用）
上記構成の電極によれば、BaTiO3，SrTiO3，
BaZrO3を用いているので放電特性に優れ、熱陰
極及び冷極性の双方に適用でき、しかも頂部放電
面を有するので集中放電を行わせることができる
から黒化の防止がより一層図れるという利点があ
る。
（考案の実施例）
以下に本考案の第１の実施例を第１図を参照し
て詳細に説明する。
同図に示す放電灯用電極は、放電灯用の管体１
と、この管体１内に配置される半導体磁器を用い
た陰極電極部２と、この陰極電極部２を管体１の
内部で、かつ、管体１の端部１ａ近傍で封着支持
する封着支持部３とを有して構成されている。
前記陰極電極部２は、第２図にも示すように半
導体磁器により形成され、その一方の端部に半球
状の放電面２ａを有する略円柱状の基部２ｂによ
り構成されている。そして、前記放電面２ａの中
央部が基部２ｂから最も突出する頂部２ｃとなつ
ている。
この頂部の存在により集中放電を行わせること
ができるから、より一層黒化の防止が図れる。
前記封着支持部３は、管体１の端部１ａを貫通
して配置され、かつ、この端部１ａで封着支持さ
れたリード線４を有し、このリード線４の管体内
側の端部４ａを前記基部２ｂの外周に巻回するこ
とにより、陰極電極部２を管体１内で端部１と垂
直配置となるように支持するとともに、管体１の
端部１ａからこのリード線４の他方の端部４ｂを
外方に突出させることにより構成されている。
次に本考案の第２の実施例を第３図ａを参照し
て説明する。尚、同図に示す放電灯用電極におい
て第１図に示すものと同一の機能を有するものに
は同一の符号を付し、その詳細な説明は省略す
る。
同図に示す放電灯用電極が第１図に示すものと
相違する点は、前記基部２ｂを管体１の端部１ａ
の中央部を貫通させ、その突出端部２ｄを前記端
部１ａから外方に突出させるとともに、この基部
２ｂの端部１ａに対する貫通部分を封着し、さら
に、前記突出端部２ｄに対してリード線１４の上
方端部１４ａを埋設したネジ体１５を螺合するこ
とにより封着支持部１３を構成し、前記リード線
１４を図示しない電源に接続することにより陰極
電極部２に通電するようにしたことである。尚、
リード線１４と陰極電極部２との接続は、第３図
ｂに示すように前記突出端部２ｄに対してリード
線１４の上方端部１４ａを固着した筒状のキヤツ
プ１６を嵌着するようにしてもよい。
次に第４図ａを参照して本考案の第３の実施例
を説明する。尚、同図に示す放電灯用電極におい
て第１図に示すものと同一の機能を有するものに
は同一の符号を付し、その詳細な説明は省略す
る。同図に示す放電灯用電極が第１図に示すもの
と相違する点は、管体１内でリード線により支持
する略円柱状の陰極電極部２２における基部２２
ｂの一方の端部に円錐状の放電面２２ａを形成
し、その突出端部を頂部２２ｃとしたことであ
る。
次に本考案の第４の実施例を第５図ａを参照し
て説明する。尚、同図に示す放電灯用電極におい
て第１図に示すものと同一の機能を有するものに
は同一の符号を付し、その詳細な説明は省略す
る。
同図に示す放電灯用電極が第３図に示すものと
相違する点は、管体１の端部１ａの中央部を貫通
させて陰極電極部２２の基部２２ｂを配置し、そ
の突出端部２２ｄを前記端部１ａから外方に突出
させるとともに、この基部２２ｂの端部１ａに対
する貫通部分を封着し、さらに、第３図ａに示す
場合と同様、突出端部２２ｄに対してリード線１
４の上方端部１４ａを埋設したネジ体１５を螺合
することにより封着支持部２３を構成し、前記リ
ード線１４を図示しない電源に接続することによ
り陰極電極部２２に通信するようにしたことであ
る。尚、リード線１４と陰極電極部２２との接続
は、第５図ｂに示すように前記突出端部２２ｄに
対してリード線１４の上方端部１４ａを固着した
筒状のキヤツプ１６を嵌着するようにしてもよ
い。
ここで、前記陰極電極部２の素材である半導体
磁器について詳述する。この半導体磁器として
は、例えば原子価補償型半導体磁器を上げること
ができる。
前記原子価補償型半導体磁器の代表例は、チタ
ン酸バリウム系を用いたものである。
また、原子価補償とは、周知のように、金属酸
化物の構成金属イオンと原子価が±１価異なる金
属イオンを不純物として添加し、不純物の導入に
よつて生じた電荷量の増減を構成金属イオンの価
数により補償することである。
この原子価補償用半導体化剤としては、Ｙ，
Dy，Hf，Ce，Pr，Nd，Sm，Gd，Ho，Er，
Tb，Sb，Nb，Ｗ，Yb，Sc，Ta等を挙げること
ができ、それらを併用して添加することもでき
る。この添加材の添加量としては0.01〜0.8mol
％、特に0.1〜0.5mol％が望ましい。
一方、本実施例の半導体磁器からなる陰極電極
部２を構成する素材は、チタン酸塩系のものが好
ましく、上記チタン酸バリウムのほか、チタン酸
ストロンチウム系、チタン酸カルシウム系、チタ
ン酸ランタン系であつてもよい。またそれらを複
合したものでもよい。さらに、上記チタン酸塩の
チタン酸をジルコン酸、ケイ酸、スズ酸の一種以
上で置換してもよい。
ところで、上述したような陰極電極用半導体磁
器を還元する方法のほか、十分な還元条件を与え
れば、半導体化剤を添加することなく還元する方
法によつても得ることができる。この場合の還元
はN2またはH2等の還元雰囲気で、かつ、望まし
くは700℃以上、最適には1200〜1450℃程度の温
度条件下で行うことができる。
また、原子価補償型のものと強制還元型のもの
とを併用して電極を形成することもできる。この
併用の態様としては、
(イ) 半導体化剤を添加し、原子価補償型半導体磁
器の成形体をつくる。
(ロ) (イ)の成形体を直接還元焼成するか、もしくは
空気焼成した焼結磁器をさらに還元焼成して、
原子価補償型及び強制還元型を併用した半導体
磁器を得る。
この半導体磁器の先端を約60°の円錐状に研削
した。
こうして得られた半導体磁器の比抵抗は9.9Ω
cmであつた。
さらに、H2＋N2の還元雰囲気中でH2濃度20
％とし、1250℃、安定時間2Hrで還元焼成したも
のの比抵抗は0.90Ωcmであつた。
他のチタン酸塩系についてもほぼ同様な結果で
あつた。第１表に結果をまとめて示す。
[Purpose of the invention] (Field of industrial application) The present invention relates to an electrode for a discharge lamp using semiconductor porcelain. (Prior art) Taking a discharge lamp using a cold cathode such as a sodium lamp as an example, the discharge electrode constituting the cathode has an electron emitting substance (barium, strontium, It is formed by applying a calcium-based oxide). However, the above-mentioned conventional electrodes cannot avoid the evaporation of the electron-emitting substance and the reaction with the mercury vapor sealed inside the discharge lamp, and therefore do not fully satisfy the various characteristics required of the discharge lamp. Tungsten is a strategic material and has the problem of high cost. By the way, discharge lamps with electrodes made of semiconductor porcelain containing crystalline titanium oxide as a main component are known (Japanese Patent Publication No. 1983-3596), but lamps using such materials have poor discharge characteristics and are difficult to put into practical use. This is not preferable because it has the following problem. (Problems to be solved by the invention) Therefore, the main purpose of the invention is to create a discharge lamp that is inexpensive, has excellent characteristics in terms of discharge characteristics, etc., is suitable as a cold cathode, and can also be used as a hot cathode. The purpose is to provide electrodes. [Structure of the invention] (Means for solving the problems) The electrode for a discharge lamp of the invention includes a tube body for a discharge lamp,
A cathode electrode portion having a discharge surface having a substantially cylindrical shape and having a top that protrudes most in the center, formed of semiconductor porcelain whose main component is one of BaTiO 3 , SrTiO 3 , BaZrO 3 , and SrZrO 3 , and this cathode electrode. and a sealing support portion that seals and supports the tube in the tubular body at an intermediate portion. (Function) According to the electrode with the above configuration, BaTiO 3 , SrTiO 3 ,
Since BaZrO 3 is used, it has excellent discharge characteristics and can be applied to both hot cathode and cold polarity.Moreover, since it has a top discharge surface, concentrated discharge can be performed, which has the advantage of further preventing blackening. be. (Embodiment of the invention) A first embodiment of the invention will be described below in detail with reference to FIG. The electrode for a discharge lamp shown in the figure is a tube body 1 for a discharge lamp.
and a cathode electrode section 2 made of semiconductor porcelain disposed inside the tube body 1, and the cathode electrode section 2 is sealed and supported inside the tube body 1 and near the end 1a of the tube body 1. The sealing support part 3 is configured. As shown in FIG. 2, the cathode electrode portion 2 is made of semiconductor ceramic and has a substantially cylindrical base portion 2b having a hemispherical discharge surface 2a at one end thereof. The center portion of the discharge surface 2a is the top portion 2c that protrudes most from the base portion 2b. Since the presence of this top portion allows concentrated discharge to occur, it is possible to further prevent blackening. The sealing support section 3 has a lead wire 4 that is arranged to penetrate through the end 1a of the tube body 1 and is sealed and supported at this end portion 1a, and the lead wire 4 is provided inside the tube body. By winding the end portion 4a around the outer periphery of the base portion 2b, the cathode electrode portion 2 is supported within the tube body 1 so as to be perpendicular to the end portion 1, and this lead is connected from the end portion 1a of the tube body 1. It is constructed by making the other end 4b of the wire 4 protrude outward. Next, a second embodiment of the present invention will be described with reference to FIG. 3a. In the discharge lamp electrodes shown in the figure, those having the same functions as those shown in FIG. 1 are designated by the same reference numerals, and detailed explanation thereof will be omitted. The electrode for a discharge lamp shown in the figure is different from the electrode shown in FIG.
The projecting end 2d thereof is made to project outward from the end 1a, the penetrating portion of the base 2b is sealed to the end 1a, and the projecting end 2d is sealed. The upper end portion 14a of the lead wire 14 is screwed into the embedded screw body 15 to constitute the sealing support portion 13, and the cathode electrode portion 2 is energized by connecting the lead wire 14 to a power source (not shown). This is what I did. still,
The connection between the lead wire 14 and the cathode electrode section 2 is achieved by fitting a cylindrical cap 16 to which the upper end 14a of the lead wire 14 is fixed onto the protruding end 2d, as shown in FIG. 3b. You can also do this. Next, a third embodiment of the present invention will be described with reference to FIG. 4a. In the discharge lamp electrodes shown in the figure, those having the same functions as those shown in FIG. 1 are designated by the same reference numerals, and detailed explanation thereof will be omitted. The electrode for a discharge lamp shown in the figure is different from the electrode shown in FIG.
A conical discharge surface 22a is formed at one end of b, and the protruding end thereof is used as the apex 22c. Next, a fourth embodiment of the present invention will be described with reference to FIG. 5a. In the discharge lamp electrodes shown in the figure, those having the same functions as those shown in FIG. 1 are designated by the same reference numerals, and detailed explanation thereof will be omitted. The electrode for a discharge lamp shown in the figure is different from the electrode shown in FIG. 22d protrudes outward from the end 1a, and the penetrating portion of the base 22b to the end 1a is sealed, and as in the case shown in FIG. 3a, a lead wire is connected to the protruding end 22d. 1
A sealing support part 23 is constructed by screwing together the screw body 15 embedded in the upper end part 14a of 4, and the lead wire 14 is connected to a power source (not shown) to communicate with the cathode electrode part 22. That's true. The lead wire 14 and the cathode electrode portion 22 are connected by fitting a cylindrical cap 16 to which the upper end 14a of the lead wire 14 is fixed to the protruding end 22d as shown in FIG. 5b. You may also do so. Here, the semiconductor porcelain that is the material of the cathode electrode section 2 will be described in detail. As this semiconductor ceramic, for example, valence compensation type semiconductor ceramic can be mentioned. A typical example of the valence-compensated semiconductor ceramic is one using barium titanate. In addition, as is well known, valence compensation is the addition of metal ions as impurities whose valence differs by ±1 from the constituent metal ions of a metal oxide, and the increase or decrease in the amount of charge caused by the introduction of impurities. This is compensated by the valence of the metal ion. The semiconductor agent for valence compensation includes Y,
Dy, Hf, Ce, Pr, Nd, Sm, Gd, Ho, Er,
Examples include Tb, Sb, Nb, W, Yb, Sc, Ta, etc., and they can also be added in combination. The amount of this additive added is 0.01 to 0.8mol.
%, especially 0.1 to 0.5 mol%. On the other hand, the material constituting the cathode electrode part 2 made of semiconductor ceramic in this embodiment is preferably a titanate-based material, and in addition to the above-mentioned barium titanate, strontium titanate-based, calcium titanate-based, and lanthanum titanate-based materials are used. It may be. A combination of them may also be used. Furthermore, the titanic acid in the titanate may be replaced with one or more of zirconic acid, silicic acid, and stannic acid. By the way, in addition to the method of reducing semiconductor ceramic for cathode electrodes as described above, it can also be obtained by a method of reducing without adding a semiconductor agent if sufficient reducing conditions are provided. The reduction in this case can be carried out in a reducing atmosphere such as N2 or H2, and preferably at a temperature of 700°C or higher, most preferably about 1200 to 1450°C. Further, an electrode can also be formed using a combination of a valence compensation type and a forced reduction type. Examples of this combination include: (a) A semiconductor forming agent is added to produce a valence-compensated semiconductor ceramic molded body. (b) Direct reduction firing of the molded body of (a), or further reduction firing of the air fired sintered porcelain,
Semiconductor porcelain using both valence compensation type and forced reduction type is obtained. The tip of this semiconductor porcelain was ground into a conical shape of approximately 60°. The specific resistance of the semiconductor porcelain thus obtained is 9.9Ω
It was cm. Furthermore, in a reducing atmosphere of H2 + N2, H2 concentration 20
%, and after reduction firing at 1250°C for 2 hours, the specific resistance was 0.90Ωcm. Almost similar results were obtained for other titanate systems. Table 1 summarizes the results.
【表】
また、チタン酸塩のチタン酸をジルコン酸、ケ
イ酸、スズ酸１種以上で置換したものについても
ほぼ同様の結果を得た。
次に電子の放出し易さを検討するために、上記
試料No.１からNo.３について電界放出強度を測定し
た。また比較のために比較的仕事関数の低いＡ
他についての測定も行つた。その結果を第６図に
示す。同図は縦軸にポリエチレン容器内放電発生
電圧［KV］をとり、横軸に試料電極を配列した
ものであり、試料電極として、Cu，Ａ，Feを
比較例にし、前記第１表の試料No.１〜No.３を並べ
ている。
同図から明らかなように本実施例試料はいずれ
も従来のものに比べて発生電圧が低くても放電を
生じ易くなつている。
上記結果によると、この半導体磁器は本実施例
に係る陰極電極用として金属と同等以上の放電特
性を備えていることが判る。このため冷陰極及び
熱陰極の双方に適用可能となる。
したがつて、この半導体磁器を用いて形成した
陰極電極部２，２２は、頂部を有する放電面と相
俟つて安定した放電特性を得ることができるとと
もに製造コストも低減可能である。
また、第３図ａ，ｂ又は第５図ａ，ｂに示すよ
うな陰極電極部２，２２に対するリード線１４の
接続構造を用いることにより、その接続工程の容
易化を図ることもできる。
本考案は上述した実施例に限定されるものでは
なく、その要旨の範囲内で種々の変形が可能であ
る。
［考案の効果］
以上の通り、本考案によれば安価に構成できか
つ良好な放電特性を有し、冷陰極用として好適で
あるとともに熱陰極用としても適用可能な放電灯
用電極を提供することができる。
また、頂部放電面としたので集中放電が可能と
なり、より一層黒化の防止が図れる。[Table] Furthermore, almost similar results were obtained for titanates in which titanic acid was replaced with one or more of zirconic acid, silicic acid, and stannic acid. Next, in order to examine the ease with which electrons are emitted, field emission intensity was measured for the above samples No. 1 to No. 3. For comparison, A with a relatively low work function
Other measurements were also made. The results are shown in FIG. In this figure, the vertical axis shows the discharge generation voltage [KV] in the polyethylene container, and the horizontal axis shows the sample electrodes.Cu, A, and Fe are used as comparative examples for the sample electrodes, and the samples in Table 1 above are used as sample electrodes. No. 1 to No. 3 are lined up. As is clear from the figure, the samples of this example are more likely to cause discharge even when the generated voltage is lower than that of the conventional samples. According to the above results, it can be seen that this semiconductor porcelain has discharge characteristics equivalent to or better than metals for use in the cathode electrode according to this example. Therefore, it can be applied to both cold cathodes and hot cathodes. Therefore, the cathode electrode parts 2 and 22 formed using this semiconductor ceramic can obtain stable discharge characteristics in combination with the discharge surface having the top, and can also reduce manufacturing costs. Furthermore, by using a structure for connecting the lead wires 14 to the cathode electrode parts 2, 22 as shown in FIGS. 3a, b or 5 a, b, the connection process can be facilitated. The present invention is not limited to the embodiments described above, and various modifications can be made within the scope of the invention. [Effects of the invention] As described above, the invention provides an electrode for a discharge lamp that can be constructed at low cost, has good discharge characteristics, is suitable for a cold cathode, and is also applicable to a hot cathode. be able to. Furthermore, since the top discharge surface is used, concentrated discharge is possible, and blackening can be further prevented.
第１図は本考案の第１の実施例を示す断面図、
第２図は同上の陰極電極部の平面図、第３図ａは
本考案の第２の実施例を示す断面図、第３図ｂは
第２の実施例における陰極電極部に対するリード
線の接続構造を示す部分断面図、第４図は本考案
の第３の実施例を示す断面図、第５図ａは本考案
の第４の実施例を示す断面図、第５図ｂは第４の
実施例における陰極電極部に対するリード線の接
続構造を示す部分断面図、第６図は本実施例での
電界放出強度測定結果を示す相関図である。
１……管体、２……陰極電極部、２ａ……放電
面、２ｂ……基部、２ｃ……頂部、３……封着支
持部、４……リード線。
FIG. 1 is a sectional view showing a first embodiment of the present invention;
Fig. 2 is a plan view of the same cathode electrode section as above, Fig. 3a is a sectional view showing a second embodiment of the present invention, and Fig. 3b is a connection of lead wires to the cathode electrode section in the second embodiment. 4 is a sectional view showing the third embodiment of the present invention, FIG. 5a is a sectional view showing the fourth embodiment of the present invention, and FIG. 5b is a sectional view showing the fourth embodiment of the present invention. FIG. 6 is a partial cross-sectional view showing the connection structure of the lead wire to the cathode electrode portion in this example, and a correlation diagram showing the field emission intensity measurement results in this example. DESCRIPTION OF SYMBOLS 1... tube body, 2... cathode electrode part, 2a... discharge surface, 2b... base, 2c... top part, 3... sealing support part, 4... lead wire.
Claims (1)
BaZrO3，SrZrO3のいずれかを主成分とする半
導体磁器により形成した略円柱状で中央部が最
も突出する頂部を有する放電面を具備した陰極
電極部と、この陰極電極部を中間部で前記管体
内に封着支持する封着支持部とを有することを
特徴とする放電灯用電極。 (2) 前記封着支持部は、前記管体の端部を貫通
し、かつ、この端部で封着されたリード線の管
体内側の端部を、陰極電極部の放電面とは反対
側の部分に巻回することにより構成されるもの
である実用新案登録請求の範囲第１項記載の放
電灯用電極。 (3) 前記封着支持部は、放電面を有する陰極電極
部を管体の端部を貫通させつつ封着することに
より構成されるものである実用新案登録請求の
範囲第１項記載の放電灯用電極。 (4) 前記封着支持部は、管体外方に突出した前記
陰極電極部の端部に結合したリード線を有する
ものである実用新案登録請求の範囲第１項若し
くは第３項に記載の放電灯用電極。[Scope of claims for utility model registration] (1) Tube body for discharge lamp, BaTiO 3 , SrTiO 3 ,
A cathode electrode part is formed of semiconductor porcelain whose main component is either BaZrO 3 or SrZrO 3 and has a discharge surface having a substantially cylindrical shape and has a top that protrudes most at the center, and this cathode electrode part is connected to 1. An electrode for a discharge lamp, comprising a sealing support part that seals and supports the inside of a tube. (2) The sealing support part passes through the end of the tube and connects the end of the lead wire sealed at this end on the inside of the tube opposite to the discharge surface of the cathode electrode part. The electrode for a discharge lamp according to claim 1, which is constructed by winding the side portion. (3) The sealing support part is constructed by sealing a cathode electrode part having a discharge surface while penetrating the end of the tube body, according to claim 1 of the utility model registration claim. Electrodes for electric lights. (4) The sealing support part has a lead wire connected to an end of the cathode electrode part protruding outward from the tube body, and the sealing support part has a lead wire connected to an end of the cathode electrode part projecting outward from the tube body. Electrodes for electric lights.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986108597U JPH0514454Y2 (en) | 1986-07-15 | 1986-07-15 | |
| KR1019870006708A KR920001844B1 (en) | 1986-07-15 | 1987-06-30 | Cold cathode type discharge lamp apparatus |
| EP87109938A EP0253316A3 (en) | 1986-07-15 | 1987-07-09 | Cold cathode type discharge lamp apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986108597U JPH0514454Y2 (en) | 1986-07-15 | 1986-07-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6315558U JPS6315558U (en) | 1988-02-01 |
| JPH0514454Y2 true JPH0514454Y2 (en) | 1993-04-16 |
Family
ID=30985939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986108597U Expired - Lifetime JPH0514454Y2 (en) | 1986-07-15 | 1986-07-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0514454Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6159853U (en) * | 1984-09-26 | 1986-04-22 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056350A (en) * | 1983-08-12 | 1985-04-01 | ハイマン、ゲゼルシヤフト、ミツト、ベシユレンクテル、ハフツング | Gas discharge lamp and method of producing same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48107582U (en) * | 1972-03-17 | 1973-12-13 | ||
| JPS56119258U (en) * | 1980-02-13 | 1981-09-11 |
-
1986
- 1986-07-15 JP JP1986108597U patent/JPH0514454Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056350A (en) * | 1983-08-12 | 1985-04-01 | ハイマン、ゲゼルシヤフト、ミツト、ベシユレンクテル、ハフツング | Gas discharge lamp and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6315558U (en) | 1988-02-01 |
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