JPH0512917Y2 - - Google Patents
Info
- Publication number
- JPH0512917Y2 JPH0512917Y2 JP1986108594U JP10859486U JPH0512917Y2 JP H0512917 Y2 JPH0512917 Y2 JP H0512917Y2 JP 1986108594 U JP1986108594 U JP 1986108594U JP 10859486 U JP10859486 U JP 10859486U JP H0512917 Y2 JPH0512917 Y2 JP H0512917Y2
- Authority
- JP
- Japan
- Prior art keywords
- discharge lamp
- electrode
- cathode electrode
- lead wire
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229910052573 porcelain Inorganic materials 0.000 claims description 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 10
- 229910002367 SrTiO Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Description
［考案の目的］
（産業上の利用分野）
本考案は半導体磁器を用いた放電灯用電極に関
する。
（従来の技術）
蛍光ランプ等の放電灯を例にとると、その陰極
を構成する放電電極は被加熱物であるコイル状の
タングステンフイラメント表面に電子放射物質
（バリウム、ストロンチウム、カルシウムを主体
とする酸化物）を塗布して形成される。
しかしながら、上記従来の電極は電子放射物質
の蒸発や放電灯内部に封入した水銀蒸気との反応
が避けられず、このため放電灯に要求される諸特
性を十分に満足させるものではなく、また、タン
グステンは戦略物質でコスト高でもあり、しかも
このような従来の電極はその材質上熱陰極として
のみ使用可能で冷陰極としては使用できないとい
う問題がある。
ところで、結晶性酸化チタニウムを主成分とす
る半導体磁器を電極とした放電灯が知られている
（特公昭26−3596号）が、この様な材料を用いた
ものは放電特性が悪く実用化困難であるという問
題点を有しているので好ましくない。
（考案が解決しようとする問題点）
そこで本考案の主たる目的は、安価でしかも放
電特性等の点で優れた特性を有し、しかも熱陰極
及び冷陰極の双方に使用可能な放電灯用電極を提
供することにある。
［考案の構成］
（問題点を解決するための手段）
本考案の放電灯用電極は、BaTiO3，SrTiO3，
BaZrO3，SrZrO3のいずれかを主成分とする半導
体磁器により形成した直線的な放電面を有する円
柱状の陰極電極部を、放電灯用管体の端部を貫通
して配置され、かつ、この端部で封着されたリー
ド線により管体内部において支持することにより
構成される。
（作用）
上記構成の電極によれば、BaTiO3，SrTiO3，
BaZrO3，SrZrO3のいずれかを主成分とする半導
体磁器によつて平坦な放電面を有する陰極電極部
を形成しているので、良好な放電特性を発揮する
とともに製造コストの低廉化が図れ、しかも、熱
陰極、冷陰極のいずれにも適用可能となる。
（考案の実施例）
まず、本考案の第１の実施例を詳細に説明す
る。
本実施例の放電灯用電極は、第１図に示すよう
に放電灯用の管体１と、この管体１内に配置され
る半導体磁器を用いた陰極電極部２と、この陰極
電極部２を管体１の内部で、かつ、管体１の端部
１ａ近傍で支持する一対のリード線３ａ，３ｂと
を有して構成されている。
前記陰極電極部２は、直線的な放電面２ａを有
する円柱状の基部２ｂと、この基部２ｂの両端部
にそれぞれ形成したリード線接続部２ｃ，２ｄと
を半導体磁器により形成したものである。
前記リード線３ａ，３ｂは、管体１の端部１ａ
で所定の間隔を有しつつ貫通して配置され、か
つ、この貫通部分がそれぞれ端部１ａにより封着
されているとともに、前記管体１内に導出した先
端部３ｃ，３ｄを前記リード線接続部２ｃ，２ｄ
に巻回接続することによりこの陰極電極部２を管
体１内で前記端部１ａと平行配置に支持し、ま
た、管体１から外方に後端部３ｅ，３ｆが突出す
るようになつている。
そして、この後端部３ｅ，３ｆに電源を接続し
て前記陰極電極部２に通電するようになつてい
る。
尚、第２図ｂに示すように前記基部２ｂの両端
部にそれぞれ導電膜４を状着、スパツタリング等
で被覆してリード線接続部１２ｃ，１２ｄを形成
したものを用いてもよい。
この場合には、導電膜４の存在によりリード線
３ａ，３ｂと基部２ｂとの接触抵抗を低減するこ
とが可能となる。
次に本考案の第２の実施例を第３図を参照して
説明する。尚、同図に示す放電灯用電極におい
て、第１図に示すものと同一の機能を有するもの
には同一の符号を付し、その詳細な説明は省略す
る。第３図に示す放電灯電極が第１図に示すもの
と異なる点は、基部２ｂの両端部にそれぞれ第４
図ａにも示すようにこの基部２ｂよりも小径なリ
ード線接続部１２ｃ，１２ｄを形成し、このリー
ド線接続部２２ｃ，２２ｄにそれぞれリード線３
ａ，３ｂの先端部３ｃ，３ｄを巻回接続して陰極
電極部２を支持するようにしたことである。
この第３図に示す放電灯用電極の場合も第１図
に示すものと同様な機能を発揮させることがで
き、かつ、小径のリード線接続部２２ｃ，２２ｄ
にリード線３ａ，３ｂを巻回接続する構成である
ので、リード線３ａ，３ｂの巻回工程の容易化を
図ることができる。尚、第４図ｂに示すように前
記リード線接続部２２ｃの外周に導電膜４を被覆
したものを用いることもできる。他方のリード線
接続部２２ｄについても同様である。
ここで、前記陰極電極部２の素材である半導体
磁器について詳述する。この半導体磁器として
は、例えば原子価補償型半導体磁器を上げること
ができる。
前記原子価補償型半導体磁器の代表例は、チタ
ン酸バリウム系を用いたものである。
また、原子価補償とは、周知のように、金属酸
化物の構成金属イオンと原子価が±１価異なる金
属イオンを不純物として添加し、不純物の導入に
よつて生じた電荷量の増減を構成金属イオンの価
数により補償することである。
この原子価補償用半導体化剤としては、Ｙ，
Dy，Hf，Ce，Pr，Nd，Sm，Gd，Ho，Er，
Tb，Sb，Nb，Ｗ，Yb，Sc，Ta等を挙げること
ができ、それらを併用して添加することもでき
る。この添加材の添加量としては0.01〜0.8mol
％、特に0.1〜0.5mol％が望ましい。
一方、本実施例の半導体磁器からなる陰極電極
部２を構成する素材は、チタン酸塩系のものが好
ましく、上記チタン酸バリウムのほか、チタン酸
ストロンチウム系、チタン酸カルシウム系、チタ
ン酸ランタン系であつてもよい。またそれらを複
合したものでもよい。さらに、上記チタン酸塩の
チタン酸をジルコン酸、ケイ酸、スズ酸の一種以
上で置換してもよい。
ところで、上述したような陰極電極用半導体磁
器を還元する方法のほか、十分な還元条件を与え
れば、半導体化剤を添加することなく還元する方
法によつても得ることができる。この場合の還元
はN2またはH2等の還元雰囲気で、かつ、望まし
くは700℃以上、最適には1200〜1450℃程度の温
度条件下で行うことができる。
また、原子価補償型のものと強制還元型のもの
とを併用して電極を形成することもできる。この
併用の態様としては、
(イ) 半導体化剤を添加し、原子価補償型半導体磁
器の成形体をつくる。
(ロ) (イ)の成形体を直接還元焼成するか、もしくは
空気焼成した焼結磁器をさらに還元焼成して、
原子価補償型及び強制還元型を併用した半導体
磁器を得る。
このようにして得られた半導体磁器の先端を約
60°の円錐状に研削した。
こうして得られた半導体磁器の比抵抗は9.9Ω
cmであつた。
さらに、H2＋N2の還元雰囲気中でH2濃度20％
とし、1250℃、安定時間2Hrで還元焼成したもの
の比抵抗は0.90Ωcmであつた。
他のチタン酸塩系についてもほぼ同様な結果で
あつた。第１表に結果をまとめて示す。
[Purpose of the invention] (Field of industrial application) The present invention relates to an electrode for a discharge lamp using semiconductor porcelain. (Prior art) Taking a discharge lamp such as a fluorescent lamp as an example, the discharge electrode constituting the cathode has an electron-emitting substance (mainly barium, strontium, and calcium) on the surface of the coiled tungsten filament that is the object to be heated. oxide). However, the above-mentioned conventional electrodes cannot avoid the evaporation of the electron-emitting substance and the reaction with the mercury vapor sealed inside the discharge lamp, and therefore do not fully satisfy the various characteristics required of the discharge lamp. Tungsten is a strategic material and is expensive, and there is a problem in that such conventional electrodes can only be used as hot cathodes and cannot be used as cold cathodes due to the material. Incidentally, a discharge lamp with electrodes made of semiconductor porcelain whose main component is crystalline titanium oxide is known (Special Publication No. 3596/1983), but lamps using such materials have poor discharge characteristics and are difficult to put into practical use. This is not preferable because it has the problem of . (Problems to be solved by the invention) Therefore, the main purpose of the invention is to create an electrode for discharge lamps that is inexpensive, has excellent characteristics in terms of discharge characteristics, etc., and can be used as both a hot cathode and a cold cathode. Our goal is to provide the following. [Structure of the invention] (Means for solving the problems) The electrode for a discharge lamp of the invention includes BaTiO 3 , SrTiO 3 ,
A cylindrical cathode electrode portion having a linear discharge surface formed of semiconductor porcelain containing either BaZrO 3 or SrZrO 3 as a main component is disposed so as to penetrate through the end of the discharge lamp tube, and It is constructed by supporting inside the tube by a lead wire sealed at this end. (Function) According to the electrode with the above configuration, BaTiO 3 , SrTiO 3 ,
Since the cathode electrode part with a flat discharge surface is formed of semiconductor porcelain whose main component is either BaZrO 3 or SrZrO 3 , it exhibits good discharge characteristics and reduces manufacturing costs. Moreover, it can be applied to both hot cathodes and cold cathodes. (Embodiment of the invention) First, a first embodiment of the invention will be described in detail. As shown in FIG. 1, the discharge lamp electrode of this embodiment includes a discharge lamp tube 1, a cathode electrode portion 2 made of semiconductor porcelain disposed inside the tube body 1, and a cathode electrode portion 2 disposed within the tube body 1. 2 inside the tubular body 1 and near the end 1a of the tubular body 1. The cathode electrode section 2 includes a cylindrical base section 2b having a linear discharge surface 2a, and lead wire connection sections 2c and 2d formed at both ends of the base section 2b, each made of semiconductor ceramic. The lead wires 3a and 3b are connected to the end 1a of the tube body 1.
The penetrating portions are respectively sealed by the end portions 1a, and the tip portions 3c and 3d led out into the tube body 1 are connected to the lead wires. Parts 2c, 2d
By winding and connecting the cathode electrode portion 2 to the end portion 1a, the cathode electrode portion 2 is supported within the tube body 1 in a parallel arrangement with the end portion 1a, and the rear end portions 3e and 3f protrude outward from the tube body 1. ing. A power source is connected to the rear end portions 3e and 3f to energize the cathode electrode portion 2. As shown in FIG. 2b, a conductive film 4 may be coated on both ends of the base portion 2b by deposition, sputtering, etc. to form lead wire connection portions 12c and 12d. In this case, the presence of the conductive film 4 makes it possible to reduce the contact resistance between the lead wires 3a, 3b and the base 2b. Next, a second embodiment of the present invention will be described with reference to FIG. In the discharge lamp electrodes shown in the figure, those having the same functions as those shown in FIG. 1 are designated by the same reference numerals, and detailed explanation thereof will be omitted. The difference between the discharge lamp electrode shown in FIG. 3 and that shown in FIG. 1 is that the discharge lamp electrode shown in FIG.
As shown in FIG.
The cathode electrode portion 2 is supported by winding and connecting the tips 3c and 3d of the tips 3a and 3b. In the case of the discharge lamp electrode shown in FIG. 3, the same function as that shown in FIG.
Since the structure is such that the lead wires 3a, 3b are connected by winding, the process of winding the lead wires 3a, 3b can be facilitated. Incidentally, as shown in FIG. 4b, it is also possible to use a structure in which the outer periphery of the lead wire connection portion 22c is coated with a conductive film 4. The same applies to the other lead wire connection portion 22d. Here, the semiconductor porcelain that is the material of the cathode electrode section 2 will be described in detail. As this semiconductor ceramic, for example, valence compensation type semiconductor ceramic can be mentioned. A typical example of the valence-compensated semiconductor ceramic is one using barium titanate. In addition, as is well known, valence compensation is the addition of metal ions as impurities whose valence differs by ±1 from the constituent metal ions of a metal oxide, and the increase or decrease in the amount of charge caused by the introduction of impurities. This is compensated by the valence of the metal ion. The semiconductor agent for valence compensation includes Y,
Dy, Hf, Ce, Pr, Nd, Sm, Gd, Ho, Er,
Examples include Tb, Sb, Nb, W, Yb, Sc, Ta, etc., and they can also be added in combination. The amount of this additive added is 0.01 to 0.8 mol.
%, especially 0.1 to 0.5 mol%. On the other hand, the material constituting the cathode electrode portion 2 made of semiconductor ceramic in this embodiment is preferably a titanate-based material, and in addition to the above-mentioned barium titanate, strontium titanate-based, calcium titanate-based, and lanthanum titanate-based materials are used. It may be. A combination of them may also be used. Furthermore, the titanic acid in the titanate may be replaced with one or more of zirconic acid, silicic acid, and stannic acid. By the way, in addition to the method of reducing semiconductor ceramics for cathode electrodes as described above, it can also be obtained by a method of reducing without adding a semiconducting agent if sufficient reducing conditions are provided. The reduction in this case can be carried out in a reducing atmosphere such as N 2 or H 2 and at a temperature of preferably 700°C or higher, most preferably about 1200 to 1450°C. Further, an electrode can also be formed using a combination of a valence compensation type and a forced reduction type. Examples of this combination include: (a) A semiconductor forming agent is added to produce a valence-compensated semiconductor ceramic molded body. (b) Direct reduction firing of the molded body of (a), or further reduction firing of the air fired sintered porcelain,
Semiconductor porcelain using both valence compensation type and forced reduction type is obtained. The tip of the semiconductor porcelain thus obtained is approximately
Grinded into a 60° conical shape. The specific resistance of the semiconductor porcelain thus obtained is 9.9Ω
It was cm. Furthermore, H 2 concentration 20% in a reducing atmosphere of H 2 + N 2
The specific resistance was 0.90 Ωcm after reduction firing at 1250°C for a stabilization time of 2 hours. Almost similar results were obtained for other titanate systems. Table 1 summarizes the results.
【表】
また、チタン酸塩のチタン酸をジルコン酸、ケ
イ酸、スズ酸の１種以上で置換したものについて
もほぼ同様の結果を得た。
次に電子の放出し易さを検討するために、上記
試料No.１からNo.３について電界放出強度を測定し
た。また比較のために比較的仕事関数の低いAl
他についての測定も行つた。その結果を第５図に
示す。同図は縦軸にポリエチレン容器内放電発生
電圧［KV］をとり、横軸に試料電極を配列した
ものであり、試料電極として、Cu，Al，Feを比
較例にし、前記第１表の試料No.１〜No.３を並べて
いる。
同図から明らかなように本実施例試料はいずれ
も従来のものに比べて発生電圧が低くても放電を
生じ易くなつている。
上記結果によると、この半導体磁器は本実施例
に係る陰極電極用として金属と同等以上の放電特
性を備えていることが判る。このため冷陰極、熱
陰極の双方に適用可能となる。
したがつて、この半導体磁器を用いて形成した
陰極電極部２は、直線的な放電面と相俟つて安定
した放電特性を得ることができるとともに製造コ
ストも低減可能である。
本考案は上述した実施例に限定されるものでは
なく、その要旨の範囲内で種々の変形が可能であ
る。
［考案の効果］
以上の通り、本考案によれば安価に構成できか
つ良好な放電特性を有し、しかも、熱陰極、冷陰
極双方に適用可能な放電灯用電極を提供すること
ができる。[Table] Furthermore, almost similar results were obtained for titanates in which titanic acid was replaced with one or more of zirconic acid, silicic acid, and stannic acid. Next, in order to examine the ease with which electrons are emitted, field emission intensity was measured for the above samples No. 1 to No. 3. Also, for comparison, Al, which has a relatively low work function,
Other measurements were also made. The results are shown in FIG. In this figure, the vertical axis shows the discharge generation voltage [KV] in the polyethylene container, and the horizontal axis shows the sample electrodes.Cu, Al, and Fe are used as comparative examples for the sample electrodes, and the samples in Table 1 above are used as sample electrodes. No. 1 to No. 3 are lined up. As is clear from the figure, the samples of this example are more likely to cause discharge even when the generated voltage is lower than that of the conventional samples. According to the above results, it can be seen that this semiconductor porcelain has discharge characteristics equivalent to or better than metals for use in the cathode electrode according to this example. Therefore, it can be applied to both cold cathodes and hot cathodes. Therefore, the cathode electrode section 2 formed using this semiconductor ceramic can have a linear discharge surface and stable discharge characteristics, and can also reduce manufacturing costs. The present invention is not limited to the embodiments described above, and various modifications can be made within the scope of the invention. [Effects of the Invention] As described above, according to the present invention, it is possible to provide an electrode for a discharge lamp that can be constructed at low cost, has good discharge characteristics, and can be applied to both a hot cathode and a cold cathode.
第１図は本考案の第１の実施例を示す断面図、
第２図ａは同上の陰極電極部の側面図、第２図ｂ
は同上の陰極電極部の変形例を示す部分拡大断面
図、第３図は本考案の第２の実施例を示す断面
図、第４図ａは同上の陰極電極部の側面図、第４
図ｂは同上の陰極電極部の変形例を示す部分拡大
断面図、第５図は本実施例での電界放出強度測定
結果を示す相関図である。
１……管体、２……陰極電極部、２ａ……放電
面、２ｂ……基部、２ｃ，２ｄ……リード線接続
部、３ａ，３ｂ……リード線。
FIG. 1 is a sectional view showing a first embodiment of the present invention;
Figure 2a is a side view of the cathode electrode section as above, Figure 2b
3 is a sectional view showing a second embodiment of the present invention; FIG. 4a is a side view of the same cathode electrode portion;
FIG. b is a partially enlarged sectional view showing a modified example of the cathode electrode portion same as above, and FIG. 5 is a correlation diagram showing the field emission intensity measurement results in this example. DESCRIPTION OF SYMBOLS 1... tube body, 2... cathode electrode part, 2a... discharge surface, 2b... base, 2c, 2d... lead wire connection part, 3a, 3b... lead wire.
Claims (1)
れかを主成分とする半導体磁器により形成した
直線的な放電面を形成する円柱状の陰極電極部
を、放電灯用管体の端部を貫通して配置され、
かつ、この端部で封着されたリード線により管
体内部において支持したことを特徴とする放電
灯用電極。 (2) 前記陰極電極部は、直線的な放電面を有する
円柱状の基部と、この基部の両端部に設けたリ
ード線接続部とを有し、このリード接続部を前
記リード線により支持したものである実用新案
登録請求の範囲第１項記載の放電灯用電極。[Claims for Utility Model Registration] (1) A cylindrical cathode electrode part forming a linear discharge surface made of semiconductor porcelain whose main component is one of BaTiO 3 , SrTiO 3 , BaZrO 3 , and SrZrO 3 . , disposed through the end of the discharge lamp tube body,
An electrode for a discharge lamp, characterized in that the electrode is supported inside the tube by a lead wire sealed at the end. (2) The cathode electrode section has a cylindrical base having a linear discharge surface and a lead wire connection section provided at both ends of the base, and the lead connection section is supported by the lead wire. The electrode for a discharge lamp according to claim 1, which is a utility model.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986108594U JPH0512917Y2 (en) | 1986-07-15 | 1986-07-15 | |
| KR1019870006970A KR920001845B1 (en) | 1986-07-15 | 1987-07-01 | Hot cathode type discharge lamp apparatus |
| EP87109937A EP0254147A3 (en) | 1986-07-15 | 1987-07-09 | Hot cathode type discharge lamp apparatus |
| CN87104929A CN1006343B (en) | 1986-07-15 | 1987-07-15 | Thermionic cathode type discharge lamp device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986108594U JPH0512917Y2 (en) | 1986-07-15 | 1986-07-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6315555U JPS6315555U (en) | 1988-02-01 |
| JPH0512917Y2 true JPH0512917Y2 (en) | 1993-04-05 |
Family
ID=30985933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986108594U Expired - Lifetime JPH0512917Y2 (en) | 1986-07-15 | 1986-07-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0512917Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56147355A (en) * | 1980-04-15 | 1981-11-16 | Matsushita Electric Works Ltd | Electrode of discharge lamp |
| JPS61108596A (en) * | 1984-11-02 | 1986-05-27 | 株式会社日立製作所 | Printing paper |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5156874U (en) * | 1974-10-30 | 1976-05-04 |
-
1986
- 1986-07-15 JP JP1986108594U patent/JPH0512917Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56147355A (en) * | 1980-04-15 | 1981-11-16 | Matsushita Electric Works Ltd | Electrode of discharge lamp |
| JPS61108596A (en) * | 1984-11-02 | 1986-05-27 | 株式会社日立製作所 | Printing paper |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6315555U (en) | 1988-02-01 |
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