JPH0514099A - Manufacture of surface acoustic wave device - Google Patents

Manufacture of surface acoustic wave device

Info

Publication number
JPH0514099A
JPH0514099A JP15793191A JP15793191A JPH0514099A JP H0514099 A JPH0514099 A JP H0514099A JP 15793191 A JP15793191 A JP 15793191A JP 15793191 A JP15793191 A JP 15793191A JP H0514099 A JPH0514099 A JP H0514099A
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
piezoelectric substrate
wave device
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15793191A
Other languages
Japanese (ja)
Inventor
Haruto Ide
治人 井手
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP15793191A priority Critical patent/JPH0514099A/en
Publication of JPH0514099A publication Critical patent/JPH0514099A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To effectively suppress a re-reflection of an undesired surface acoustic wave by cutting a large sized piezoelectric substrate base material into a piezoelectric substrate with a blade whose both major sides are drawn. CONSTITUTION:In the case of manufacturing the surface acoustic wave device in which a transmission electrode and a reception electrode are formed to the surface of a piezoelectric substrate whose both ends in the direction of propagation of a surface acoustic wave are chamferred, at first a large sized piezoelectric substrate base material 10 is prepared from which plural piezoelectric substrates 1 can be extracted. Then a transmission electrode 2, a reception electrode 3, absorbing members 4a, 4b are formed corresponding to each surface acoustic wave device and the large sized piezoelectric substrate base material 10 is cut off in response to the shape of each surface acoustic wave device. Concretely, the large sized piezoelectric substrate base material 10 is adhered to a reference face 20 of a cutter via an adhesive resin sheet 21 and the material 10 is cut off by using a blade 23 whose major sides are drawn. Thus, the re- reflection of an undesired surface acoustic wave is effectively suppressed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、表面弾性波フィルタな
どの表面弾性波装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a surface acoustic wave device such as a surface acoustic wave filter.

【0002】[0002]

【従来の技術】従来より、表面弾性波装置は、通信機器
や音響・映像機器の第1、第2中間周波数の抽出用また
は映像信号の抽出用の装置として多用されている。
2. Description of the Related Art Conventionally, a surface acoustic wave device has been widely used as a device for extracting first and second intermediate frequencies of a communication device or an audio / video device or for extracting a video signal.

【0003】表面弾性波装置は図1に示されるように、
圧電性基板1上に送信電極2及び受信電極3を形成し、
さらに、表面弾性波の伝搬方向の両端部に不要な表面弾
性波を吸収する吸収部材4a、4bが形成されている。
(特開昭2−2504)圧電性基板1上の表面弾性波
は、送信電極2から受信電極3に伝搬されるが、その間
以外にも不要な表面弾性波及びバルク波が発生する。特
に、不要な表面弾性波は圧電性基板1の端部で再反射し
てしまい、送信電極2と受信電極3間の正規な表面弾性
波に悪影響を与えてしまう。このため、特に圧電性基板
1の両端部に不要な表面弾性波の吸収効率の高い形状の
吸収部材4a、4b、例えばシリコーンゴムやエポキシ
樹脂が被着されていた。しかし、基板1の端部で再反射
する不要な表面弾性波を吸収するに充分な効果がなく、
基板1の表面弾性波の伝搬方向の両端部を面取り加工が
施されていた。
The surface acoustic wave device is, as shown in FIG.
The transmission electrode 2 and the reception electrode 3 are formed on the piezoelectric substrate 1,
Further, absorbing members 4a and 4b that absorb unnecessary surface acoustic waves are formed at both ends in the propagation direction of the surface acoustic waves.
(JP-A-2-2504) Surface acoustic waves on the piezoelectric substrate 1 are propagated from the transmitting electrode 2 to the receiving electrode 3, but unnecessary surface acoustic waves and bulk waves are generated other than during the period. In particular, unnecessary surface acoustic waves are re-reflected at the ends of the piezoelectric substrate 1 and adversely affect the regular surface acoustic waves between the transmitting electrode 2 and the receiving electrode 3. For this reason, in particular, both ends of the piezoelectric substrate 1 are coated with absorbing members 4a and 4b having a shape having a high efficiency of absorbing unnecessary surface acoustic waves, for example, silicone rubber or epoxy resin. However, there is not enough effect to absorb unnecessary surface acoustic waves that are re-reflected at the end of the substrate 1,
Both ends of the substrate 1 in the propagation direction of surface acoustic waves were chamfered.

【0004】[0004]

【従来の技術の問題点】しかし、上述の面取り加工は、
圧電性基板1が複数抽出できる圧電性基板母材の切断
後、個々の圧電性基板1の端部を面取り処理しなくては
ならず、加工工程の増加に伴い量産性が著しく低下する
ものであった。
However, the above chamfering process is
After cutting the piezoelectric substrate base material from which a plurality of piezoelectric substrates 1 can be extracted, the end portions of the individual piezoelectric substrates 1 must be chamfered, which significantly reduces the mass productivity as the number of processing steps increases. there were.

【0005】本発明は上述の問題点に鑑みて案出された
ものであり、その目的は製造工程が付加されることな
く、不要な表面弾性波の再反射を有効に抑えることがで
きる表面弾性波装置の製造方法を提供することにある。
The present invention has been devised in view of the above-mentioned problems, and an object thereof is a surface elasticity capable of effectively suppressing unnecessary re-reflection of surface acoustic waves without adding a manufacturing process. It is to provide a method of manufacturing a wave device.

【0006】[0006]

【問題点を解決するための具体的な手段】本発明によれ
ば、表面弾性波伝搬方向の両端に面取りを施した圧電基
板表面に送信電極及び受信電極を形成して成る表面弾性
波装置を製造するにあたって、前記圧電基板を、大型母
材を両主面が絞りこまれたブレードで切断する工程を含
むことを特徴とする表面弾性波装置の製造方法である。
According to the present invention, there is provided a surface acoustic wave device in which a transmitting electrode and a receiving electrode are formed on the surface of a piezoelectric substrate having chamfered ends in the surface acoustic wave propagation direction. In the manufacturing method, a method for manufacturing a surface acoustic wave device is characterized in that it includes a step of cutting the large-sized base material with a blade whose both main surfaces are narrowed down.

【0007】[0007]

【作用】本発明によれば、前記圧電基板の大型母材から
切断するにあたり、圧電性基板端面に相当する切断部
を、両主面が一定曲率で絞りこまれたブレードで切断し
たので、切断した状態で既に圧電性基板端面がR面とな
る。これにより、不要な表面弾性波を再反射を有効に抑
えることができ、さらに特別な面取り加工を施す必要が
ないため、製造量産性が著しく向上する。
According to the present invention, when cutting from the large-sized base material of the piezoelectric substrate, the cutting portion corresponding to the end face of the piezoelectric substrate is cut by the blade whose both main surfaces are narrowed with a constant curvature. In this state, the end surface of the piezoelectric substrate is already the R surface. As a result, re-reflection of unnecessary surface acoustic waves can be effectively suppressed, and no special chamfering process is required, so that the mass productivity of manufacturing is significantly improved.

【0008】[0008]

【実施例】以下、本発明を図面に基づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

【0009】図1は本発明によって製造される表面弾性
波装置の外観斜視図である。
FIG. 1 is an external perspective view of a surface acoustic wave device manufactured according to the present invention.

【0010】1は圧電性基板であり、2は圧電性基板1
上に形成された送信電極、3は受信電極、4a、4bは
表面弾性波の伝搬方向の両端部に不要な表面弾性波を吸
収する吸収部材である。
Reference numeral 1 is a piezoelectric substrate, and 2 is a piezoelectric substrate 1.
The transmitting electrodes 3 formed above are receiving electrodes 4a and 4b are absorbing members for absorbing unnecessary surface acoustic waves at both ends in the propagation direction of the surface acoustic waves.

【0011】圧電性基板1はニオブ酸リチウム、タンタ
ル酸リチウム、α石英などの単結晶や、チタン酸ジルコ
ン酸鉛などの圧電磁器からなり、所定結晶方位でスライ
ス切断されたり、また所定分極方向に分極処理され切断
されたものであり、例えば幅1.1mm、長さ8.5m
m、厚み0.45mmの矩形状を成している。
The piezoelectric substrate 1 is composed of a single crystal of lithium niobate, lithium tantalate, α-quartz or the like, or a piezoelectric ceramic of lead zirconate titanate or the like, and is sliced in a predetermined crystal orientation or in a predetermined polarization direction. It is polarized and cut, for example, width 1.1mm, length 8.5m
It has a rectangular shape of m and a thickness of 0.45 mm.

【0012】また、圧電性基板1の表面弾性波伝搬方向
の両端部は、その稜線がR状に面取り加工1a、1bが
施されている。
Further, both ends of the piezoelectric substrate 1 in the surface acoustic wave propagation direction are chamfered 1a and 1b so that their ridge lines are R-shaped.

【0013】送信電極2、受信電極3はアルニウムなど
からなる櫛歯電極であり、表面弾性波の励振周波数によ
ってその間隔が適宜設定されている。また、送信電極2
は重み付けされた電極構成で、受信電極3は正規型電極
で構成されている。具体的には圧電性基板1上にアルミ
ニウムなどの金属膜が薄膜技法で形成され、その後フォ
トリソグラフィー技術を用いて所定形状の電極に形成さ
れる。
The transmitting electrode 2 and the receiving electrode 3 are comb-teeth electrodes made of aluminum or the like, and their intervals are appropriately set according to the excitation frequency of the surface acoustic wave. Also, the transmission electrode 2
Is a weighted electrode structure, and the receiving electrode 3 is a normal type electrode. Specifically, a metal film such as aluminum is formed on the piezoelectric substrate 1 by a thin film technique, and then an electrode having a predetermined shape is formed by using a photolithography technique.

【0014】吸収部材4a、4bはシリコーンゴム、エ
ポキシ樹脂などからなり、基板1の伝搬方向の両端部に
形成される。具体的には厚膜印刷法などで基板1のR面
加工1a、1b部分及び電極の一部の周囲を取り囲むよ
うに塗布される。
The absorbing members 4a and 4b are made of silicone rubber, epoxy resin or the like, and are formed at both ends of the substrate 1 in the propagation direction. Specifically, it is applied by a thick film printing method or the like so as to surround the R surface processing 1a and 1b portions of the substrate 1 and a part of the electrodes.

【0015】上述の構成をした表面弾性波装置は以下の
工程によって製造される。
The surface acoustic wave device having the above structure is manufactured by the following steps.

【0016】第1の工程で先ず、圧電性基板1が複数個
抽出できる大型の圧電性基板母材が用意される。
In the first step, first, a large piezoelectric substrate base material from which a plurality of piezoelectric substrates 1 can be extracted is prepared.

【0017】次の工程では、各表面弾性波装置に対応す
るように、送信電極2、受信電極3、吸収部材4a、4
bが上述の手法によって形成される。
In the next step, the transmitting electrode 2, the receiving electrode 3, the absorbing members 4a, 4 are arranged so as to correspond to the surface acoustic wave devices.
b is formed by the method described above.

【0018】次の工程では、大型の圧電性基板母材10
を各表面弾性波装置の形状に応じて切断される。具体的
には、図2に示すように切断装置の基準面20に粘着樹
脂シート21を介して接着固定され、ブレード23によ
って切断加工される。このとき、表面弾性波の伝搬方向
と平行な切断部(図2では現れない)はチップの先端が
平板状の通常のブレードで形成され、さらに表面弾性波
の伝搬方向の基板端面(伝搬方向と直交する方向)の切
断部22は回転するブレード23でもって形成される。
In the next step, a large piezoelectric substrate base material 10 is used.
Is cut according to the shape of each surface acoustic wave device. Specifically, as shown in FIG. 2, it is adhesively fixed to the reference surface 20 of the cutting device via the adhesive resin sheet 21, and is cut by the blade 23. At this time, the cut portion (not shown in FIG. 2) parallel to the propagation direction of the surface acoustic wave is formed by a normal blade having a flat tip at the tip of the chip. The cutting portion 22 in the (orthogonal direction) is formed by a rotating blade 23.

【0019】図3はブレード23の外観斜視図であり、
図4はその先端形状を示す断面図である。ブレード23
は円板形状であり、その先端の両主面が一定曲率で絞り
こまれた(逆R)面24を有している。さらに、切断部
分には所定粒径のダイヤモンド粒子が付着されている。
ここで、逆R面24の絞り込み深さaは少なくとも圧電
性基板1の厚み程度に設定され、例えば0.40〜0.
45mmとなっている。
FIG. 3 is an external perspective view of the blade 23.
FIG. 4 is a sectional view showing the tip shape. Blade 23
Has a disk shape, and both main surfaces at its tip have a surface (reverse R) 24 narrowed down with a constant curvature. Further, diamond particles having a predetermined particle size are attached to the cut portion.
Here, the narrowing depth a of the reverse R surface 24 is set to at least about the thickness of the piezoelectric substrate 1, and is 0.40 to 0.
It is 45 mm.

【0020】このようなブレード23を図2の紙面前後
方向に向かって回転しがら走らせて、圧電性基板母材1
0に切断部22を形成する。
The piezoelectric substrate base material 1 is run by rotating such a blade 23 in the front-back direction of the paper surface of FIG.
The cut portion 22 is formed at 0.

【0021】これにより切断部22によって切断された
圧電性基板1の伝搬方向の端面は、ブレード23の逆R
面24に対応して、R面加工1a、1bが施されること
になる。尚、図2において、点線部分は次のブレード2
3の走査によって切断される部分を示す。
As a result, the end face in the propagation direction of the piezoelectric substrate 1 cut by the cutting portion 22 is the reverse R of the blade 23.
The R surface processing 1a, 1b is performed corresponding to the surface 24. In addition, in FIG. 2, the dotted line indicates the next blade 2.
The part cut by the scan of 3 is shown.

【0022】次の工程では、圧電性基板1を樹脂シート
21から剥離することによって、個々の表面弾性波装置
が達成される。尚、吸収部材4a、4bは、個々の表面
弾性波装置に分離した後に塗布してもよいし、また、樹
脂シート21から剥離する直前に塗布しても構わない。
In the next step, the piezoelectric substrate 1 is peeled off from the resin sheet 21 to achieve each surface acoustic wave device. The absorbing members 4a and 4b may be applied after being separated into individual surface acoustic wave devices, or may be applied immediately before being separated from the resin sheet 21.

【0023】以上の製造方法によれば、圧電性基板1の
表面弾性波伝搬方向の両端部に相当する切断部22を、
先端の両主面が一定曲率で絞りこまれた(逆R)面24
を有するブレード23によって形成するため、切断した
時に既に圧電性基板1の端面にR面加工1a、1bと成
っている。したがって特別な面取り加工工程を付加する
ことなく、簡単に圧電性基板1の表面弾性波伝搬方向の
端部をR面取り加工が達成される。
According to the above manufacturing method, the cut portions 22 corresponding to both ends of the piezoelectric substrate 1 in the surface acoustic wave propagation direction are formed,
(Reverse R) surface 24 where both main surfaces at the tip are narrowed down with a constant curvature
Since it is formed by the blade 23 having the above-mentioned shape, the end faces of the piezoelectric substrate 1 are already R-face processed 1a and 1b when cut. Therefore, R chamfering is easily achieved at the end portion of the piezoelectric substrate 1 in the surface acoustic wave propagation direction without adding a special chamfering step.

【0024】上述の製造方法で製造された表面弾性波装
置は、送信電極2から受信電極3に伝搬する表面弾性波
に対して悪影響を与える不要な表面弾性波を有効に抑制
でき、吸収部材4a、4bのスペースを縮小することが
でき、素子の小型化、多数個取りができ、コストを低下
させることができる。
The surface acoustic wave device manufactured by the above-described manufacturing method can effectively suppress unnecessary surface acoustic waves that adversely affect the surface acoustic wave propagating from the transmitting electrode 2 to the receiving electrode 3, and the absorbing member 4a. The space of 4b can be reduced, the element can be miniaturized, a large number can be obtained, and the cost can be reduced.

【0025】[0025]

【発明の効果】本発明によれば、不要な表面弾性波の再
反射を有効に抑えることができる表面弾性波装置を簡単
に製造することができる。
According to the present invention, a surface acoustic wave device capable of effectively suppressing unnecessary re-reflection of surface acoustic waves can be easily manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図1】表面弾性波装置の斜視図である。FIG. 1 is a perspective view of a surface acoustic wave device.

【図2】本発明の製造方法による切断部を形成している
状態の断面図である。
FIG. 2 is a cross-sectional view showing a state where a cut portion is formed by the manufacturing method of the present invention.

【図3】本発明の製造方法に用いるブレードの斜視図で
ある。
FIG. 3 is a perspective view of a blade used in the manufacturing method of the present invention.

【図4】ブレードの部分拡大図である。FIG. 4 is a partially enlarged view of a blade.

【符号の説明】[Explanation of symbols]

1・・・・・・・圧電性基板 10・・・・・・圧電性基板母材 2 ・・・・・・送信電極 3 ・・・・・・受信電極 4a、4b・・・吸収部材 20・・・・・・基準面 21・・・・・・粘着樹脂シート 22・・・・・・切断部 23・・・・・・ブレード 1 --- Piezoelectric substrate 10 --- Piezoelectric substrate base material 2 --- Transmission electrode 3 --- Reception electrodes 4a, 4b ... Absorption member 20・ ・ ・ Reference surface 21 ・ ・ ・ ・ ・ ・ Adhesive resin sheet 22 ・ ・ ・ ・ ・ Cutting part 23 ・ ・ ・ ・ ・ ・ Blade

Claims (1)

【特許請求の範囲】 【請求項1】表面弾性波伝搬方向の両端に面取りを施し
た圧電基板表面に送信電極及び受信電極を形成して成る
表面弾性波装置を製造するにあたって、 前記圧電基板を、大型母材を両主面が絞りこまれたブレ
ードで切断する工程を含むことを特徴とする表面弾性波
装置の製造方法。
Claim: What is claimed is: 1. When manufacturing a surface acoustic wave device comprising a transmitting electrode and a receiving electrode formed on a surface of a piezoelectric substrate whose ends are chamfered in the surface acoustic wave propagation direction, A method for manufacturing a surface acoustic wave device, comprising: cutting a large base material with a blade whose both main surfaces are narrowed.
JP15793191A 1991-06-28 1991-06-28 Manufacture of surface acoustic wave device Pending JPH0514099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15793191A JPH0514099A (en) 1991-06-28 1991-06-28 Manufacture of surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15793191A JPH0514099A (en) 1991-06-28 1991-06-28 Manufacture of surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPH0514099A true JPH0514099A (en) 1993-01-22

Family

ID=15660608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15793191A Pending JPH0514099A (en) 1991-06-28 1991-06-28 Manufacture of surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH0514099A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011120226A (en) * 2009-10-27 2011-06-16 Ngk Insulators Ltd Elastic-wave device, and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011120226A (en) * 2009-10-27 2011-06-16 Ngk Insulators Ltd Elastic-wave device, and method of manufacturing the same

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